CN113054918B - Power amplifier circuit and microwave transmission equipment - Google Patents

Power amplifier circuit and microwave transmission equipment Download PDF

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Publication number
CN113054918B
CN113054918B CN202110261680.2A CN202110261680A CN113054918B CN 113054918 B CN113054918 B CN 113054918B CN 202110261680 A CN202110261680 A CN 202110261680A CN 113054918 B CN113054918 B CN 113054918B
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microstrip line
circuit
power amplifier
transverse
vertical
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CN113054918A (en
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廖斌
黄平
王登
陈小钉
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Shenzhen University
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Shenzhen University
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    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/32Modifications of amplifiers to reduce non-linear distortion
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers

Abstract

The invention provides a power amplifier circuit and microwave transmission equipment, wherein the power amplifier circuit comprises: a power amplifier for performing power amplification; an input matching circuit for performing input matching; and the output harmonic suppression matching circuit is used for performing output harmonic suppression and matching. The base/grid of the power amplifier is connected with the input matching circuit, the collector/drain of the power amplifier is connected with the output harmonic suppression matching circuit, and the emitter/source of the power amplifier is grounded. The invention is provided with the output harmonic suppression matching circuit, and the gain, the drain efficiency and the PAE efficiency of the power amplifier are improved through the harmonic suppression structure.

Description

Power amplifier circuit and microwave transmission equipment
Technical Field
The invention relates to the field of amplifiers, in particular to a power amplifier circuit and microwave transmission equipment.
Background
The research and development of the microwave wireless energy transmission technology are closely related to the energy problem faced by human society, and the microwave wireless energy transmission technology has the advantages of high transmission efficiency and long transmission distance, and has the advantages of high directivity, high frequency band, large bandwidth and the like compared with the traditional mode of transmitting electric energy by using high-voltage electric power equipment.
When microwave wireless transmission is designed, the indexes of the radio frequency power amplifier are the most critical, and are particularly reflected in high gain, high flatness and high efficiency of the power amplifier. However, the existing rf amplifier circuit is implemented by a simple input matching circuit and an output matching circuit, and the gain improvement of the power amplifier is limited.
Thus, the prior art has yet to be improved and enhanced.
Disclosure of Invention
In view of the above-mentioned shortcomings of the prior art, the present invention is directed to a power amplifier circuit and a microwave transmission device, wherein an output harmonic suppression matching circuit is provided in the power amplifier, and the gain, drain efficiency and PAE efficiency of the power amplifier are improved by a harmonic suppression structure.
In order to achieve the purpose, the invention adopts the following technical scheme:
the present invention provides a power amplifier circuit, comprising: a power amplifier for performing power amplification; an input matching circuit for performing input matching; and the output harmonic suppression matching circuit is used for performing output harmonic suppression and matching. The base/grid of the power amplifier is connected with the input matching circuit, the collector/drain of the power amplifier is connected with the output harmonic suppression matching circuit, and the emitter/source of the power amplifier is grounded.
Further, the power amplifier circuit further includes: a first coupling bias circuit for coupling and providing a bias current; a second coupling bias circuit for coupling and providing a bias current; a stabilizing circuit for stabilizing the gain of the amplifier; a first power supply and a second power supply for supplying power; the first coupling bias circuit is connected with the anode of the first power supply, the stabilizing circuit and the base/grid electrode of the power amplifier, the second coupling bias circuit is connected with the output harmonic suppression matching circuit, the anode of the second power supply and the collector/drain electrode of the power amplifier, the cathode of the first power supply and the cathode of the second power supply are grounded, and the input matching circuit is connected with the power amplifier through the stabilizing circuit.
Furthermore, the power amplifier circuit further comprises a plurality of microstrip lines, the power amplifier is connected with the first coupling circuit, the second coupling bias circuit, the stabilizing circuit and the output harmonic suppression matching circuit through the microstrip lines, and the stabilizing circuit is connected with the input matching circuit through the microstrip lines.
Further, the first coupling bias circuit includes: a first coupling circuit for coupling; a first suppression circuit for suppressing the high frequency signal and the second harmonic; the first coupling circuit is connected with the anode of the first power supply through the microstrip line, and the first coupling circuit is also connected with the base/grid of the stabilizing circuit and the power amplifier through the first suppression circuit.
Further, the second bias coupling circuit includes: a second coupling circuit for coupling; a second suppression circuit for suppressing the high frequency signal and the second harmonic; the second coupling circuit is connected with the anode of the second power supply through the microstrip line, and the second coupling circuit is also connected with the input end of the output harmonic suppression matching circuit and the collector/drain of the power amplifier through the second suppression circuit.
Further, the output harmonic rejection matching circuit includes: a harmonic rejection network for performing third harmonic rejection and fifth harmonic rejection; an output matching circuit for performing output matching; the input end of the harmonic suppression network is connected with the first coupling bias circuit and the collector/drain electrode of the power amplifier, and the output end of the harmonic suppression network is connected with the output matching circuit.
Further, the harmonic suppression network comprises a first harmonic suppression unit, and the first harmonic suppression unit comprises a first transverse microstrip line, a second transverse microstrip line, a third transverse microstrip line, a fourth transverse microstrip line, a fifth transverse microstrip line, a sixth transverse microstrip line, a first vertical microstrip line, a second vertical microstrip line, a third vertical microstrip line, a fourth vertical microstrip line and a fifth vertical microstrip line; one end of the first transverse microstrip line and one end of the second transverse microstrip line are both connected with one end of the first vertical microstrip line, the other end of the first vertical microstrip line is connected with the output matching circuit, the first coupling bias circuit and the collector/drain of the power amplifier, and the first transverse microstrip line, the second vertical microstrip line, the third transverse microstrip line, the third vertical microstrip line and the fourth transverse microstrip line are sequentially connected towards the other end of the first vertical microstrip line; the second transverse microstrip line, the fourth vertical microstrip line, the fifth transverse microstrip line, the fifth vertical microstrip line and the sixth transverse microstrip line are sequentially connected towards the other end direction of the first vertical microstrip line.
Further, the harmonic suppression network further includes a second harmonic suppression unit, where the second harmonic suppression unit includes a seventh transverse microstrip line, an eighth transverse microstrip line, a ninth transverse microstrip line, a tenth transverse microstrip line, a sixth vertical microstrip line, a seventh vertical microstrip line, an eighth vertical microstrip line, and a ninth vertical microstrip line; one end of the sixth vertical microstrip line is connected with the other end of the first vertical microstrip line, the output matching circuit, the first coupling bias circuit and the collector/drain electrode of the power amplifier, and the sixth vertical microstrip line, the seventh transverse microstrip line, the seventh vertical microstrip line, the eighth transverse microstrip line, the eighth vertical microstrip line, the ninth transverse microstrip line, the ninth vertical microstrip line and the tenth transverse microstrip line are sequentially connected.
Further, the harmonic suppression network further includes a third harmonic suppression unit, and the second harmonic suppression unit includes an eleventh transverse microstrip line, a twelfth transverse microstrip line, a thirteenth transverse microstrip line, a fourteenth transverse microstrip line, a tenth vertical microstrip line, an eleventh vertical microstrip line, a twelfth vertical microstrip line, and a thirteenth vertical microstrip line; one end of the tenth vertical microstrip line is connected with the other end of the first vertical microstrip line, one end of the output matching circuit, one end of the sixth vertical microstrip line, the first coupling bias circuit and the collector/drain of the power amplifier, and the tenth vertical microstrip line, the eleventh transverse microstrip line, the eleventh vertical microstrip line, the twelfth transverse microstrip line, the twelfth vertical microstrip line, the thirteenth transverse microstrip line, the thirteenth vertical microstrip line and the fourteenth transverse microstrip line are sequentially connected.
Based on the power amplifier circuit, the invention also provides microwave transmission equipment which comprises an equipment body, wherein the equipment body is internally provided with a circuit board, and the circuit board is provided with the power amplifier circuit.
Compared with the prior art, the power amplifier circuit and the microwave transmission equipment provided by the invention comprise: a power amplifier for performing power amplification; an input matching circuit for performing input matching; and the output harmonic suppression matching circuit is used for performing output harmonic suppression and matching. The base/grid of the power amplifier is connected with the input matching circuit, the collector/drain of the power amplifier is connected with the output harmonic suppression matching circuit, and the emitter/source of the power amplifier is grounded. The invention is provided with the output harmonic suppression matching circuit, and the gain, the drain efficiency and the PAE efficiency of the power amplifier are improved through the harmonic suppression structure.
Drawings
Fig. 1 is a block diagram of a power amplifier circuit according to the present invention;
fig. 2 is a block diagram of a further embodiment of the power amplifier circuit according to the present invention;
fig. 3 is a circuit diagram of a first coupling bias circuit, a stabilizing circuit and an input matching circuit of the power amplifier circuit provided by the invention;
fig. 4 is a circuit diagram of a second coupling bias circuit of the power amplifier circuit provided by the present invention;
fig. 5 is a circuit diagram of a harmonic suppression network and an output matching circuit of the power amplifier circuit provided by the present invention;
FIG. 6 is a schematic diagram of simulation parameters of S parameters of a harmonic suppression network according to the present invention;
FIG. 7 is a schematic diagram of the principle simulation performance of the power amplifier circuit provided by the present invention;
FIG. 8 is a schematic diagram of the electromagnetic simulation performance of the power amplifier circuit provided by the present invention;
FIG. 9 is a schematic diagram of DE and PAE performance of the power amplifier circuit provided by the present invention at 2.2GHz-2.6 GHz;
fig. 10 is a schematic diagram of the gain performance of the power amplifier circuit provided by the present invention at 2.2GHz-2.6 GHz.
Detailed Description
The invention provides a power amplifier circuit and microwave transmission equipment, wherein an output harmonic suppression matching circuit is arranged in a power amplifier, and the gain, the drain efficiency and the PAE efficiency of the power amplifier are improved through a harmonic suppression structure.
The embodiments of the present invention are intended to explain technical concepts of the present invention, technical problems to be solved, technical features constituting technical solutions, and technical effects to be brought about in more detail. The embodiments are explained below, but the scope of the present invention is not limited thereto. Further, the technical features of the embodiments described below may be combined with each other as long as they do not conflict with each other.
For the convenience of understanding the embodiments of the present application, relevant elements related to the embodiments of the present application will be described first.
"microwave" generally refers to electromagnetic waves having a wavelength of 1 mm to 1 m, and the corresponding frequency range is 300MHz-300GHz, which is between radio waves and infrared rays, and can be classified as decimetric waves, centimeter waves, millimeter waves and submillimeter waves. The microwave has all the characteristics of the electromagnetic wave as the low-frequency electromagnetic wave, but has many unique properties due to the short wavelength and high frequency of the microwave, which are mainly shown in the following:
1. description method, because the wavelength of the electromagnetic wave is extremely short, can be compared with the size of the component and apparatus used, because the energy concentrates its propagation property to describe with the concept of "way" in the low frequency band, the component used is called and concentrates the parametric element (resistance, electric capacity, inductance, etc.); the propagation of microwaves should be handled by the concept of "field", using distributed parameter elements (waveguides, resonators, etc.). Therefore, the current, voltage, resistance and the like of the low-frequency circuit are not applicable any more, but are processed by adopting an equivalent method; microwave measurements replace current, voltage, resistance, etc. with power, wavelength, impedance.
2. The generation method comprises the following steps: the period of the microwave is close to the transit time of electrons in the electronic tube, so that the generation and amplification of the microwave can not use common electronic devices, and can replace microelectronic elements with completely different structures and principles, such as klystrons, magnetrons, traveling wave tubes and microwave solid-state devices.
3. Light similarity: since microwaves are interposed between radio waves and infrared rays, they have not only the properties of radio waves but also the properties of light waves, such as straight propagation at the speed of light, reflection, refraction, interference, diffraction, and the like.
4. The energy is strong: because of the high frequency of microwave, it has wide available frequency band, large information capacity and can penetrate the atmosphere, so that it can be extensively used for researching satellite communication, satellite broadcast television, space communication and radioastronomy. Due to these characteristics of microwaves, microwaves are widely used in communication, radar, navigation, remote sensing, astronomy, weather, industry, agriculture, medical treatment, and medicine.
Microwaves are generally generated and transmitted by a microwave integrated circuit, which is a circuit operating in a microwave band and a millimeter wave band, having a certain function by integrating microwave passive elements, active devices, transmission lines, and interconnection lines on one substrate.
The microwave transmission line in a microwave integrated circuit is generally a microstrip line. A microwave transmission line is a transmission line used to transmit microwave signals and microwave energy. The variety of microwave transmission lines can be divided into three categories according to the properties of the transmission lines to transmit electromagnetic waves: (1) TEM mode transmission lines (including quasi-TEM mode transmission lines), such as twin-wire transmission lines, coaxial lines, striplines, microstrip lines, and the like; (2) TE mode and TM mode transmission lines, such as metal waveguide transmission lines of rectangular waveguide, circular waveguide, elliptical waveguide, ridge waveguide, etc.; (3) surface waveguide transmission lines, the transmission mode of which is typically a mixed mode, such as dielectric waveguide, dielectric mirror, etc.
Microstrip lines are one kind of microwave transmission lines, and in the early 60 s, microwave integrated circuits are formed due to the development of microwave low-loss dielectric materials and microwave semiconductor devices, so that the microstrip lines are widely applied, and various types of microstrip lines appear in succession and are generally manufactured by using a thin film process. The dielectric substrate is made of materials with high dielectric constant and low microwave loss, and the conductor has the characteristics of high conductivity, good stability, strong adhesion with the substrate and the like.
Microwave integrated circuits can be divided into hybrid microwave integrated circuits and monolithic microwave integrated circuits. The hybrid microwave integrated circuit is a functional block which is manufactured by adopting a thin film or thick film technology and manufacturing a passive microwave circuit on a substrate suitable for transmitting microwave signals. The circuit is designed and manufactured according to the requirements of the system. Common hybrid microwave integrated circuits include various broadband microwave circuits such as a microstrip mixer, a microwave low-noise amplifier, a power amplifier, a frequency multiplier, a phased array unit, and the like.
DE: amplifier drain efficiency;
PAE: amplifier added efficiency;
gain: an amplifier gain;
horizontal microstrip line: a horizontally disposed microstrip line;
vertical microstrip line: a vertically arranged microstrip line.
At present, in the prior art, when a microwave circuit is designed for wireless transmission, the index of a radio frequency power amplifier is the most critical, and is particularly reflected in high gain, high flatness and high efficiency of the power amplifier. However, the existing rf amplifier circuit is implemented by a simple input matching circuit and an output matching circuit, and the gain improvement of the power amplifier is limited. Therefore, it is necessary to provide a new power amplifier circuit to further increase the gain of the power amplifier circuit.
In view of the above problems in the prior art, referring to fig. 1, the present invention provides a power amplifier Q1 circuit, comprising: a power amplifier Q1 for performing power amplification; an input matching circuit 100 for performing input matching; an output harmonic rejection matching circuit 200 for performing output harmonic rejection and matching. The base/gate of the power amplifier Q1 is connected to the input matching circuit 100, the collector/drain of the power amplifier Q1 is connected to the output harmonic rejection matching circuit 200, and the emitter/source of the power amplifier Q1 is grounded. The present embodiment provides the output harmonic rejection matching circuit 200, and improves the gain, drain efficiency, and PAE efficiency of the power amplifier Q1 by the harmonic rejection structure.
Further, referring to fig. 2, the power amplifier Q1 circuit further includes: a first coupling bias circuit 300 for coupling and providing a bias current; a second coupling bias circuit 400 for coupling and providing a bias current; a stabilizing circuit 500 for stabilizing the amplifier gain; a first power supply SCR1 and a second power supply SCR2 for supplying power; the first coupling bias circuit 300 is connected to the positive electrode of the first power supply SCR1, the stabilizing circuit 500 and the base/gate of the power amplifier Q1, the second coupling bias circuit 400 is connected to the output harmonic rejection matching circuit 200, the positive electrode of the second power supply SCR2 and the collector/drain of the power amplifier Q1, the negative electrode of the first power supply SCR1 and the negative electrode of the second power supply SCR2 are both grounded, and the input matching circuit 100 is connected to the power amplifier Q1 through the stabilizing circuit 500.
In practical implementation, in this embodiment, the first power supply SCR1 provides voltage, which is transmitted to the first coupling bias circuit 300 through the microstrip line, and then is received by the first coupling bias circuit 300After the line processing, the signal is transmitted to the stabilizing circuit 500 and a grid/base of the power amplifier Q1 (the grid is used when the power amplifier Q1 is an MOS transistor, and the base is used when the power amplifier Q1 is a triode); the voltage provided by the second power supply SCR2 is transmitted to the second coupling bias circuit 400 through a microstrip line, and is transmitted to the collector/drain of the power amplifier Q1 (the drain is when the power amplifier Q1 is an MOS transistor, and the collector is when the power amplifier Q1 is a triode) after being processed by the second coupling bias circuit 400, so that the power amplifier Q1 is powered on. The first coupling bias circuit 300 and the second coupling bias circuit 400 make the impedance of the power amplifier Q1 reach 1.83e at the frequency band of 2.4-2.5GHz 4 (i.e., 1.83 multiplied by 10 to the power of 4) and, in combination with the stabilizing circuit 500, the gain of the power amplifier Q1 reaches between 20.003 dB and 20.378dB, and the gain difference is within 0.3, so that the gain stability is improved.
Further, the power amplifier Q1 circuit further includes a plurality of microstrip lines, the power amplifier Q1 is connected with the first coupling bias circuit 300, the second coupling bias circuit 400, the stabilizing circuit 500 and the output harmonic suppression matching circuit 200 through the microstrip lines, and the stabilizing circuit 500 is connected with the input matching circuit 100 through the microstrip lines. Specifically, in this embodiment, signals between each circuit unit are transmitted through the microstrip line. Preferably, the microstrip lines are 28 microstrip lines, which are respectively marked as a first microstrip line TL1 to a twenty-eighth microstrip line TL28. Specifically, the microstrip lines are all used as connecting lines for signal transmission.
Further, referring to fig. 3, the first coupling bias circuit 300 includes: a first coupling circuit for coupling; a first suppression circuit for suppressing the high frequency signal and the second harmonic; the first coupling circuit is connected with the anode of the first power supply SCR1 through the microstrip line, and the first coupling circuit is further connected with the base/gate of the stabilizing circuit 500 and the power amplifier Q1 through the first suppressing circuit.
In specific implementation, in this embodiment, the first power supply SCR1 couples power to the first power supplyThe first coupling circuit provides a supply voltage and the first suppression circuit is connected in series to form a first coupled bias circuit 300. The coupling circuit couples the supply voltage so that the impedance can reach 1.83e at most in the frequency band of 2.4-2.5GHZ 4 The first suppression circuit suppresses the effect of the high-frequency signal on the circuit performance, so that the power amplifier Q1 is prevented from being influenced by the high-frequency signal, and simultaneously suppresses the second harmonic generated in the circuit, so that the power amplifier Q1 is prevented from being influenced by the second harmonic.
Preferably, with reference to fig. 3, the first coupling circuit includes a first capacitor C1 and a second capacitor C2, one end of the first capacitor C1 is connected to one end of the second capacitor C2, the positive electrode of the first power SCR1, and one end of the first suppression circuit, and the other end of the first capacitor C1 and the other end of the second capacitor C2 are both grounded. Specifically, the fourth capacitor C4 and the fifth capacitor C5 are two different picofarad capacitors, so that the impedance is high at 2.45GHz, and the output end of the transistor is in a high impedance state.
The first suppression circuit comprises a first arc microstrip line, a first microstrip line TL1 and a second microstrip line TL2. One end of the first arc microstrip line is connected with one end of the second capacitor C2 and the anode of the first power supply SCR1 sequentially through the first microstrip line TL1 and the third microstrip line TL3, and is further connected with one end of the first capacitor C1 through the first microstrip line TL1, the third microstrip line TL3 and the fourth microstrip line TL 4; the other end of the first arc microstrip line is connected with the stabilizing circuit 500 through the second microstrip line TL2 and the fifth microstrip line TL5, and is connected with the base/gate of the power amplifier Q1 through the second microstrip line TL2, the fifth microstrip line TL5 and the sixth microstrip line TL 6.
In this embodiment, in the circuit design, the theoretical length from the junction point of the second capacitor C2 (i.e., one end of the second capacitor C2) to the power amplifier Q1 is required to be 1/4 of the microwave wavelength. In order to facilitate welding of components, a small section of microstrip line (namely, a first microstrip line TL 1) and a long section of microstrip line (namely, a second microstrip line TL 2) are provided, and the sum of the lengths of the first microstrip line TL1, the second microstrip line TL2 and the first arc microstrip line is equal to 1/4 of the microwave wavelength. The first arc-shaped microstrip line can restrain high-frequency signals and avoid the interference of the high-frequency signals to the power amplifier Q1.
Specifically, please refer to fig. 3, the stabilizing circuit 500 includes a first resistor R1 and a third capacitor C3, one end of the first resistor R1 and one end of the third capacitor C3 are both connected to one end of the first arc microstrip line through a fifth microstrip line TL5 and a second microstrip line TL2, and are also connected to the base/gate of the power amplifier Q1 through the fifth microstrip line TL5 and a sixth microstrip line TL6, the other end of the first resistor R1 is connected to the other end of the third capacitor C3 and is connected to the input matching circuit 100 through a seventh microstrip line TL7 and an eighth microstrip line TL8, the eighth microstrip line TL8 is further connected to one end of a ninth TL9, and the other end of the ninth microstrip line TL9 is open-circuited.
In this embodiment, when the operating frequency is low, since the third capacitor C3 generates high impedance, and the impedance of the resistor is small at this time, the signal can be transmitted into the power amplifier Q1 with the maximum effect, whereas when the signal is transmitted at high frequency, the impedance of the capacitor is small, and the signal can be transmitted into the power amplifier Q1 with the maximum effect through the capacitor. Therefore, when the power amplifier Q1 operates in the 2.4-2.5GHZ band, the first coupling bias circuit 300 maximizes the input impedance to 1.83e 4 In combination with the stabilizing circuit 500, the maximum effective signal input can be realized, and the power amplifier Q1 can reach a stability factor greater than 1 and tending to be unchanged when acting on the frequency band of 2.4 to 2.5 GHZ. In summary, the first coupling bias circuit 300 and the stabilizing circuit 500 can be combined to achieve better input effect of the input signal at the gate/base of the power amplifier Q1.
The power amplifier Q1 circuit also comprises a first reserved interface TERM1 for accessing input equipment and a second reserved interface TERM2 for accessing output equipment; the input matching circuit 100 comprises a fourth capacitance C4. One end of the fourth capacitor C4 is connected to the eighth microstrip line TL8, the other end of the fourth capacitor C4 is connected to one end of a tenth microstrip line TL10, and the other end of the tenth microstrip line TL10 is connected to the first reserved interface TERM 1.
Further, referring to fig. 4, the second bias coupling circuit includes: a second coupling circuit for coupling; a second suppression circuit for suppressing the high frequency signal and the second harmonic; the second coupling circuit is connected with the anode of the second power supply SCR2 through the microstrip line, and the second coupling circuit is further connected with the input end of the output harmonic suppression matching circuit 200 and the collector/drain of the power amplifier Q1 through the second suppression circuit.
Further, with continued reference to fig. 4, the second coupling circuit includes a fifth capacitor C5 and a sixth capacitor C6. One end of the fifth capacitor C5 is connected to the anode of the second power supply SCR2, one end of the sixth capacitor C6, and the second suppression circuit, and the other end of the fifth capacitor C5 and the other end of the sixth capacitor C6 are both grounded. Specifically, when the power amplifier Q1 acts on a frequency band of 2.4 to 2.5GHZ, the fifth capacitor C5 and the sixth capacitor C6 make the input impedance of the collector/drain of the power amplifier Q1 reach a maximum value of 1.83e 4
Specifically, please refer to fig. 4, the second suppression circuit includes a second arc microstrip line, an eleventh microstrip line TL11 and a twelfth microstrip line TL12, one end of the second arc microstrip line is connected to one end of the fifth capacitor C5 and the anode of the second power SCR2 sequentially through the eleventh microstrip line TL11 and the thirteenth microstrip line TL13, and one end of the second arc microstrip line is further connected to one end of the sixth capacitor C6 through the eleventh microstrip line TL11, the thirteenth microstrip line TL13 and the fourteenth microstrip line TL 14; the other end of the second arc-shaped microstrip line is connected with the collector/drain of the power amplifier Q1 through a twelfth microstrip line TL12, a fifteenth microstrip line TL15 and a sixteenth microstrip line TL16, and is further connected with the input end of the output harmonic suppression matching circuit 200 through a path formed by the twelfth microstrip line TL12, the fifteenth microstrip line TL15, a seventeenth microstrip line TL17, an eighteenth microstrip line TL18, a nineteenth microstrip line TL19, a twentieth microstrip line TL20, a twenty-first microstrip line TL21 and a twenty-second microstrip line TL 22.
Specifically, in this embodiment, the functions of the second coupling circuit and the second suppression circuit are the same as the functions of the first coupling circuit and the second suppression circuit, and are not described again here.
Further, referring to fig. 5, the output harmonic rejection matching circuit 200 includes: a harmonic rejection network for performing third harmonic rejection and fifth harmonic rejection; an output matching circuit 220 for performing output matching; the input terminal of the harmonic suppression network is connected to the first coupling bias circuit 300 and the collector/drain of the power amplifier Q1, and the output terminal of the harmonic suppression network is connected to the output matching circuit 220.
In specific implementation, in this embodiment, by adding the harmonic suppression network to the rear end of the drain of the power amplifier Q1, the third harmonic suppression and the fifth harmonic suppression can be performed on the amplified signal amplified by the power amplifier Q1, so as to further improve the gain effect of the amplifier. After the amplified signal is processed by the harmonic suppression network, the amplified signal is output to the output matching circuit 220 for output impedance matching, and finally the amplified signal with higher output drain efficiency is obtained and output to the output device, so that the output device performs corresponding signal processing.
Further, please continue to refer to fig. 5, the harmonic suppression network includes a first harmonic suppression unit, and the first harmonic suppression unit includes a first transverse microstrip line TL-1, a second transverse microstrip line TL-2, a third transverse microstrip line TL-3, a fourth transverse microstrip line TL-4, a fifth transverse microstrip line TL-5, a sixth transverse microstrip line TL-6, a first vertical microstrip line TL01, a second vertical microstrip line TL02, a third vertical microstrip line TL03, a fourth vertical microstrip line TL04, and a fifth vertical microstrip line TL05; one end of the first transverse microstrip line TL-1 and one end of the second transverse microstrip TL-2 are both connected with one end of the first vertical microstrip TL01, the other end of the first vertical microstrip TL01 is connected with the output matching circuit 220, the first coupling bias circuit 300 and the collector/drain of the power amplifier Q1, and the first transverse microstrip TL-1, the second vertical microstrip TL02, the third transverse microstrip TL-3, the third vertical microstrip TL03 and the fourth transverse microstrip TL-4 are sequentially connected towards the other end of the first vertical microstrip TL 01; the second transverse microstrip line TL-2, the fourth vertical microstrip line TL04, the fifth transverse microstrip line TL-5, the fifth vertical microstrip line TL05 and the sixth transverse microstrip line TL-6 are sequentially connected towards the other end of the first vertical microstrip line TL 01.
Specifically, one end of the first transverse microstrip line TL-1 and one end of the second transverse microstrip line TL-2 are both connected to one end of the first vertical microstrip line TL01, the other end of the first vertical microstrip line TL01 is connected to the output matching circuit 220 through the twenty-first microstrip line TL20, the twenty-first microstrip line TL21, the twenty-second microstrip line TL22, the twenty-third microstrip line TL23, the twenty-fourth microstrip line TL24, the twenty-fifth microstrip line TL25 and the twenty-sixth microstrip line TL26, and the first vertical microstrip line TL01 is further connected to the collector/drain of the power amplifier Q1 through the twenty-third microstrip line TL20, the nineteenth microstrip line TL19 and the eighteenth microstrip line TL 18; the other end of the first transverse microstrip line TL-1 is connected with one end of a second vertical microstrip line TL02, the other end of the second vertical microstrip line TL02 is connected with one end of a third transverse microstrip line TL-3, the other end of the third transverse microstrip line TL-3 is connected with one end of a third vertical microstrip line TL03, the other end of the third vertical microstrip line TL03 is connected with one end of a fourth transverse microstrip line TL-4, and the other end of the fourth transverse microstrip TL-4 is open-circuited; the other end of the second transverse microstrip line TL-2 is connected with one end of the fourth vertical microstrip line TL04, the other end of the fourth vertical microstrip line TL04 is connected with one end of the fifth transverse microstrip line TL-5, the other end of the fifth transverse microstrip line TL-5 is connected with one end of the fifth vertical microstrip line TL05, the other end of the fifth vertical microstrip line TL05 is connected with one end of the sixth transverse microstrip TL-6, and the sixth transverse microstrip TL-6 is open-circuited.
As shown in the figure, the first transverse microstrip line TL-1, the second vertical microstrip line TL02, the third transverse microstrip line TL-3, the third vertical microstrip line TL03 and the fourth transverse microstrip line TL-4 are sequentially connected to form a shape of a number 5 in a square font; and the second transverse microstrip line TL-2, the fourth vertical microstrip line TL04, the fifth transverse microstrip line TL-5, the fifth vertical microstrip line TL05 and the sixth transverse microstrip line TL-6 form a number 2 shape in a square font. I.e. the number 5 and the number 2 are symmetrically arranged.
Further, please continue to refer to fig. 5, the harmonic suppression network further includes a second harmonic suppression unit, and the second harmonic suppression unit includes a seventh horizontal microstrip line TL-7, an eighth horizontal microstrip line TL-8, a ninth horizontal microstrip line TL-9, a tenth horizontal microstrip line TL-10, a sixth vertical microstrip line TL06, a seventh vertical microstrip line TL07, an eighth vertical microstrip line TL08, and a ninth vertical microstrip line TL09; one end of the sixth vertical microstrip line TL06 is connected to the other end of the first vertical microstrip line TL01, the output matching circuit 220, the first coupling bias circuit 300, and a collector/drain of the power amplifier Q1, and the sixth vertical microstrip line TL06, the seventh horizontal microstrip line TL-7, the seventh vertical microstrip line TL07, the eighth horizontal microstrip line TL-8, the eighth vertical microstrip line TL08, the ninth horizontal microstrip line TL-9, the ninth vertical microstrip line TL09, and the tenth horizontal microstrip line TL-10 are sequentially connected.
Specifically, one end of the sixth vertical microstrip line TL06 is connected to the eighteenth microstrip line TL18, the other end of the sixth vertical microstrip line TL06 is connected to one end of the seventh transverse microstrip line TL-7, the other end of the seventh transverse microstrip line TL-7 is connected to one end of the seventh vertical microstrip line TL07, the other end of the seventh vertical microstrip line TL07 is connected to one end of the eighth transverse microstrip line TL-8, the other end of the eighth transverse microstrip line TL-8 is connected to one end of the eighth vertical microstrip line TL08, the other end of the eighth vertical microstrip line TL08 is connected to one end of the ninth transverse microstrip line TL-9, the other end of the ninth transverse microstrip line TL-9 is connected to one end of the ninth vertical microstrip line TL09, the other end of the ninth vertical microstrip line TL09 is connected to one end of the tenth transverse microstrip line TL-10, and the other end of the tenth transverse microstrip line TL-10 is open-circuited. The second harmonic suppression unit is shaped as shown in the figure and has a symmetrical structure with the third harmonic suppression unit.
Further, please refer to fig. 5, the harmonic suppression network further includes a third harmonic suppression unit, and the second harmonic suppression unit includes an eleventh horizontal microstrip line TL-11, a twelfth horizontal microstrip line TL-12, a thirteenth horizontal microstrip line TL-13, a fourteenth horizontal microstrip line TL-14, a tenth vertical microstrip line TL010, an eleventh vertical microstrip line TL011, a twelfth vertical microstrip line TL012, and a thirteenth vertical microstrip line TL013; one end of the tenth vertical microstrip line TL010 is connected with the other end of the first vertical microstrip line TL01, one end of the output matching circuit 220, one end of the sixth vertical microstrip line TL06, the first coupling bias circuit 300 and a collector/drain of the power amplifier Q1, and the tenth vertical microstrip line TL010, the eleventh transverse microstrip line TL-11, the eleventh vertical microstrip line TL011, the twelfth transverse microstrip line TL-12, the twelfth vertical microstrip line TL012, the thirteenth transverse microstrip line TL-13, the thirteenth vertical microstrip line TL013 and the fourteenth transverse microstrip line TL-14 are sequentially connected.
Specifically, one end of the tenth vertical microstrip line TL010 is connected to the twenty second microstrip line TL22, the other end of the tenth vertical microstrip line TL010 is connected to one end of the eleventh transverse microstrip line TL-11, the other end of the eleventh transverse microstrip line TL-11 is connected to one end of the eleventh vertical microstrip line TL011, the other end of the eleventh vertical microstrip line TL011 is connected to one end of the twelfth transverse microstrip line TL-12, the other end of the twelfth transverse microstrip line TL-12 is connected to one end of the twelfth vertical microstrip line TL012, the other end of the twelfth vertical microstrip line TL012 is connected to one end of the thirteenth transverse microstrip line TL-13, the other end of the thirteenth transverse microstrip line TL-13 is connected to one end of the thirteenth vertical microstrip line TL013, the other end of the thirteenth vertical microstrip line TL013 is connected to one end of the fourteenth transverse microstrip line TL-14, and the other end of the fourteenth transverse microstrip line TL-14 is open-circuited.
Further, please refer to fig. 5, the output matching circuit 220 includes a seventh capacitor C7, one end of the seventh capacitor C7 is connected to the harmonic suppression network and the collector/drain of the power amplifier Q1 through a microstrip transmission path formed by a twenty-sixth microstrip line TL26, a twenty-fifth microstrip line TL25, a twenty-fourth microstrip line TL24, a twenty-third microstrip line TL23, a twenty-second microstrip line TL22, a twenty-first microstrip line TL21, a twenty-fifth microstrip line TL20, a nineteenth microstrip line TL19, and an eighteenth microstrip line TL18, and the other end of the seventh capacitor C7 is connected to an output device through a eighteenth microstrip line TL28 to output an amplified signal to the output device. The twenty-sixth microstrip line TL26 is further connected with one end of the twenty-seventh microstrip line TL27, and the other end of the twenty-seventh microstrip line TL27 is open-circuited.
Various performances of the power amplifier circuit are explained below:
the harmonic suppression network is subjected to simulation test, the circuit part mainly comprises two microstrips with the electrical lengths of 30 degrees and 18 degrees respectively, and the circuit mainly suppresses the frequencies at frequency points of 7.35GHz and 12.25 GHz. The simulation performance obtained in this example is shown in FIG. 6, from which it can be seen that S21 is-37.45 dB at the third harmonic of 7.35GHz and S21 is-85.57 dB at the fifth harmonic of 12.25GHz, both of which have S11 of 0dB; where S11 is a reflection coefficient and S21 is an insertion loss.
The power amplifier circuit is subjected to a principle simulation test (as shown in fig. 7) and an electromagnetic simulation test (as shown in fig. 8), and as can be seen from fig. 7 and 8, under the condition that the target of 10W output power is met, the experimental results of the principle simulation and the EM electromagnetic simulation are not greatly different, so that the circuit can be proved to be feasible and can realize corresponding functions. Referring to fig. 9 and 10, for the electromagnetic simulation test of the power amplifier, a frequency scan simulation is performed when the input power is 29dBm, and the drain efficiency and the PAE are both above 70% at the frequency band of 2.35-2.55GHz, the gain is greater than 11dB, and the flatness within 2.4-2.5GHz is relatively large, so that the power amplifier circuit of the invention has good amplification gain, drain efficiency and PAE efficiency.
Based on the power amplifier circuit, the invention also provides microwave transmission equipment which comprises an equipment body, wherein the equipment body is internally provided with a circuit board, and the circuit board is provided with the power amplifier circuit. Since the power amplifier circuit has been described in detail above, it is not described herein again.
In summary, the power amplifier circuit and the microwave transmission apparatus provided by the present invention include: a power amplifier for performing power amplification; an input matching circuit for performing input matching; and the output harmonic suppression matching circuit is used for performing output harmonic suppression and matching. The base/grid of the power amplifier is connected with the input matching circuit, the collector/drain of the power amplifier is connected with the output harmonic suppression matching circuit, and the emitter/source of the power amplifier is grounded. The invention is provided with the output harmonic suppression matching circuit, and the gain, the drain efficiency and the PAE efficiency of the power amplifier are improved through the harmonic suppression structure.
It should be understood that equivalents and modifications to the invention as described herein may occur to those skilled in the art, and all such modifications and alterations are intended to fall within the scope of the appended claims.

Claims (7)

1. A power amplifier circuit, comprising:
a power amplifier for performing power amplification;
an input matching circuit for performing input matching;
an output harmonic suppression matching circuit for performing output harmonic suppression and matching;
the base/grid of the power amplifier is connected with the input matching circuit, the collector/drain of the power amplifier is connected with the output harmonic suppression matching circuit, and the emitter/source of the power amplifier is grounded;
further comprising:
a first coupling bias circuit for coupling and providing a bias current;
a second coupling bias circuit for coupling and providing a bias current;
a stabilizing circuit for stabilizing the gain of the amplifier;
a first power supply and a second power supply for supplying power;
the first coupling bias circuit is connected with the anode of the first power supply, the stabilizing circuit and the base electrode/grid electrode of the power amplifier, the second coupling bias circuit is connected with the output harmonic suppression matching circuit, the anode of the second power supply and the collector electrode/drain electrode of the power amplifier, the cathode of the first power supply and the cathode of the second power supply are both grounded, and the input matching circuit is connected with the power amplifier through the stabilizing circuit;
the output harmonic rejection matching circuit includes:
a harmonic rejection network for performing third harmonic rejection and fifth harmonic rejection;
an output matching circuit for performing output matching;
the input end of the harmonic suppression network is connected with the first coupling bias circuit and the collector/drain electrode of the power amplifier, and the output end of the harmonic suppression network is connected with the output matching circuit; the harmonic suppression network comprises a first harmonic suppression unit, and the first harmonic suppression unit comprises a first transverse microstrip line, a second transverse microstrip line, a third transverse microstrip line, a fourth transverse microstrip line, a fifth transverse microstrip line, a sixth transverse microstrip line, a first vertical microstrip line, a second vertical microstrip line, a third vertical microstrip line, a fourth vertical microstrip line and a fifth vertical microstrip line; one end of the first transverse microstrip line and one end of the second transverse microstrip line are both connected with one end of the first vertical microstrip line, and the other end of the first vertical microstrip line is connected with the output matching circuit, the first coupling bias circuit and the collector/drain of the power amplifier; the first transverse microstrip line, the second vertical microstrip line, the third transverse microstrip line, the third vertical microstrip line and the fourth transverse microstrip line are sequentially connected towards the direction of the other end of the first vertical microstrip line; the second transverse microstrip line, the fourth vertical microstrip line, the fifth transverse microstrip line, the fifth vertical microstrip line and the sixth transverse microstrip line are sequentially connected towards the other end direction of the first vertical microstrip line.
2. The power amplifier circuit of claim 1, further comprising a plurality of microstrip lines, wherein the power amplifier is connected to the first coupling bias circuit, the second coupling bias circuit, the stabilizing circuit and the output harmonic rejection matching circuit through the microstrip lines, and the stabilizing circuit is connected to the input matching circuit through the microstrip lines.
3. The power amplifier circuit of claim 2, wherein the first coupling bias circuit comprises:
a first coupling circuit for coupling;
a first suppression circuit for suppressing the high frequency signal and the second harmonic;
the first coupling circuit is connected with the anode of the first power supply through the microstrip line, and the first coupling circuit is also connected with the base/grid of the stabilizing circuit and the power amplifier through the first suppression circuit.
4. The power amplifier circuit of claim 2, wherein the second coupling bias circuit comprises:
a second coupling circuit for coupling;
a second suppression circuit for suppressing the high frequency signal and the second harmonic;
the second coupling circuit is connected with the anode of the second power supply through the microstrip line, and the second coupling circuit is further connected with the input end of the output harmonic suppression matching circuit and the collector/drain electrode of the power amplifier through the second suppression circuit.
5. The power amplifier circuit of claim 1, wherein the harmonic rejection network further comprises a second harmonic rejection unit comprising a seventh transverse microstrip, an eighth transverse microstrip, a ninth transverse microstrip, a tenth transverse microstrip, a sixth vertical microstrip, a seventh vertical microstrip, an eighth vertical microstrip, and a ninth vertical microstrip; one end of the sixth vertical microstrip line is connected with the other end of the first vertical microstrip line, the output matching circuit, the first coupling bias circuit and the collector/drain electrode of the power amplifier, and the sixth vertical microstrip line, the seventh transverse microstrip line, the seventh vertical microstrip line, the eighth transverse microstrip line, the eighth vertical microstrip line, the ninth transverse microstrip line, the ninth vertical microstrip line and the tenth transverse microstrip line are sequentially connected.
6. The power amplifier circuit of claim 1, wherein the harmonic rejection network further comprises a third harmonic rejection unit comprising an eleventh transverse microstrip, a twelfth transverse microstrip, a thirteenth transverse microstrip, a fourteenth transverse microstrip, a tenth vertical microstrip, an eleventh vertical microstrip, a twelfth vertical microstrip, and a thirteenth vertical microstrip; one end of the tenth vertical microstrip line is connected with the other end of the first vertical microstrip line, one end of the output matching circuit, one end of the sixth vertical microstrip line, the first coupling bias circuit and the collector/drain of the power amplifier, and the tenth vertical microstrip line, the eleventh transverse microstrip line, the eleventh vertical microstrip line, the twelfth transverse microstrip line, the twelfth vertical microstrip line, the thirteenth transverse microstrip line, the thirteenth vertical microstrip line and the fourteenth transverse microstrip line are sequentially connected.
7. Microwave transmission equipment, characterized in that it comprises an equipment body, in which a circuit board is arranged, on which a power amplifier circuit according to any one of claims 1 to 6 is arranged.
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Citations (1)

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CN101662263A (en) * 2008-08-27 2010-03-03 中国科学院微电子研究所 Bias circuit used in Ku waveband internally-matched field effect transistor

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CN110212868A (en) * 2019-06-06 2019-09-06 辽宁工程技术大学 A kind of power amplifier based on comb filtering
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