CN203457111U - Class-AB/inverse class-F multi-mode power amplifier based on high-electron-mobility gallium nitride transistor - Google Patents
Class-AB/inverse class-F multi-mode power amplifier based on high-electron-mobility gallium nitride transistor Download PDFInfo
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- CN203457111U CN203457111U CN201320538372.0U CN201320538372U CN203457111U CN 203457111 U CN203457111 U CN 203457111U CN 201320538372 U CN201320538372 U CN 201320538372U CN 203457111 U CN203457111 U CN 203457111U
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Abstract
The utility model relates to a class-AB/inverse class-F multi-mode power amplifier based on a high-electron-mobility gallium nitride transistor, and belongs to the technical field of electronic components. The class-AB/inverse class-F multi-mode power amplifier based on the high-electron-mobility gallium nitride transistor comprises an input matching network, an output matching network and the transistor, wherein the input matching network is connected with an input bias network, the output matching network is connected with an output bias network, and the transistor is connected with the input matching network and the output matching network. A topological structure of a circuit of the class-AB/inverse class-F multi-mode power amplifier is based on an inverse class-F power amplifier, and the class-AB/inverse class-F multi-mode power amplifier can work through switching between a class-AB mode and an inverse class-F mode by having control over changes of the bias voltage of the class-AB/inverse class-F multi-mode power amplifier so that the class-AB/inverse class-F multi-mode power amplifier can have the class-AB high linearity characteristic and the inverse class-F high efficiency characteristic. In a wireless communication system, according to the actual situation, when high linearity needs to be provided by the class-AB/inverse class-F multi-mode power amplifier, the bias voltage of the transistor is adjusted to enable the class-AB/inverse class-F multi-mode power amplifier to work in the class-AB working state; when high efficiency needs to be provided by the class-AB/inverse class-F multi-mode power amplifier, the bias voltage of the transistor is adjusted to enable the class-AB/inverse class-F multi-mode power amplifier to work in the inverse class-F working state.
Description
Technical field
The utility model relates to a kind of power amplifier, and particularly a kind of AB/ of the S-band based on GaN high electron mobility transistor (GaN HEMT) is against F(F
-1) class multi-mode power amplifier, belong to technical field of electronic components.
Background technology
Power amplifier is the critical component of modern wireless communication systems, and its performance is the key factor of restriction whole system performance and technical merit.Along with the fast development of wireless communication system, people have higher requirement to the bandwidth of operation of power amplifier, efficiency and linearity index.
In classical power amplifier, according to the definition of the angle of flow, power amplifier is divided into category-A, AB class, category-B.Wherein the category-A power amplifier angle of flow is 2 π, and the AB power-like amplifier angle of flow is π～2 π, and the category-B power amplifier angle of flow is π.Why being called as classics, is because it exists in history for a long time.Classical power amplifiers has very large loss when conducting, has affected the raising of efficiency.Although category-A power amplifier has the good linearity, yet its efficiency is minimum, because transistor is operated in conducting state always, so pipe consumption is maximum.Category-B efficiency power amplifier is higher, and its linearity is but the poorest.And AB power-like amplifier is between category-A and category-B.
Along with developing rapidly of wireless telecommunication system, the demand of high-efficiency radio-frequency power amplifier is increased gradually.The operating efficiency that how to improve power amplifier has become an important topic.For raising the efficiency, researcher is absorbed in great effort in the mode of operation of power amplifier.D class for example, E class, F class and contrary F power-like amplifier mode of operation.F class and contrary F power-like amplifier become the focus of research in recent years.F power-like amplifier is a kind of laod network Harmonic Control Method, its laod network presents high impedance at odd harmonic place, in even-order harmonic, place presents Low ESR, make to form the mutually not overlapping square-wave voltage that only contains odd harmonic composition and only contain the semisinusoidal electric current of even-order harmonic in transistorized drain electrode place, make desirable F power-like amplifier there is 100% efficiency.And contrary F power-like amplifier is just in time contrary to the control of odd even subharmonic with F power-like amplifier, contrary F power-like amplifier presents Low ESR at odd harmonic place, in even-order harmonic, place presents high impedance, make the semisinusoidal waveform of transistor drain voltage for only containing odd harmonic composition, and the square wave current of drain current for only containing even-order harmonic composition.
Its frequency range of power amplifier that is operated in S-band is 2.7 ~ 3.5GHz, this power amplifier is mainly used in the aspects such as relaying, satellite communication, radar, present widely used bluetooth, ZIGBEE, wireless routing, wireless mouse etc., also used the frequency range of this wave band.
Summary of the invention
The purpose of this utility model is good for the AB power-like amplifier linearity, efficiency is poor, and contrary F power-like amplifier efficiency is high, but the feature of poor linearity, design a kind of AB/ based on GaN high electron mobility transistor against F class multi-mode power amplifier, by regulating its gate bias voltage to be operated in respectively AB class operating state by power ratio control amplifier, or contrary F class operating state.In wireless telecommunication system, can, according to actual conditions, when required power amplifier provides higher line to spend, regulate its gate bias voltage to make it be operated in AB class operating state; When required power amplifier provides greater efficiency, regulate its gate bias voltage to make it be operated in contrary F class operating state.
For achieving the above object, the technical scheme that the utility model employing consists of following technical measures realizes.
The AB/ based on GaN high electron mobility transistor the utility model proposes, against F class multi-mode power amplifier, comprises input biasing networks, output offset network, input matching network and output matching network four module, and transistor; Described input biasing networks is connected with input matching network, and output offset network is connected with output matching network, and described transistor is connected with output matching network with input matching network respectively.
In technique scheme, described transistor adopts GaN high electron mobility transistor (GaN HEMT), and its transistor gate is connected with output matching network with input matching network respectively with transistor drain.
In technique scheme, by inputting, second harmonic is controlled the electric capacity one of micro-band connection to described input biasing networks, the input decoupling capacitor one that the micro-band of the micro-band of gate bias, gate bias of electric capacity one connection connects, input decoupling electrochemical capacitor three compositions that the input decoupling capacitor two that the micro-band of gate bias connects is connected with the micro-band of gate bias.
In technique scheme, described output offset network is controlled the electric capacity two of micro-band connection, the micro-band of drain bias that electric capacity two connects by exporting second harmonic, and the output decoupling electrochemical capacitor three that the output decoupling capacitor two that the micro-band of output decoupling capacitor one, drain bias that the micro-band of drain bias connects connects is connected with the micro-band of drain bias forms.
In technique scheme, described input matching network by inputting input capacitance that microstrip line connects, the first microstrip line that input capacitance connects, the second microstrip line that the steady resistance that the Input matching minor matters that the first microstrip line connects, Input matching minor matters connect is connected with steady resistance form; Wherein, steady resistance is controlled micro-band with the input second harmonic of input in biasing networks and is connected.
In technique scheme, described transistor is positioned on carrier, and described transistor gate is connected with the second microstrip line in input matching network.
In technique scheme, the triple-frequency harmonics that described output matching network is connected by the 3rd microstrip line controls minor matters, triple-frequency harmonics controls the 4th microstrip line that minor matters connect, the 5th microstrip line that the 4th microstrip line connects, the 5th microstrip line connect output matching minor matters, the output capacitance that output matching minor matters connect form with the output microstrip line that output capacitance is connected; Wherein, output capacitance is controlled micro-band with the output second harmonic in output offset network and is connected.
In technique scheme, described transistor is positioned on carrier, and described transistor drain is connected with the 3rd microstrip line in output matching network.
AB/ based on GaN high electron mobility transistor of the present utility model is against F class multi-mode power amplifier, described input biasing networks is connected with input matching network, output offset network is connected with output matching network, and described GaN high electron mobility transistor (GaN HEMT) is connected with output matching network with input matching network respectively.Its feature is mainly that output matching network and output offset network have determined transistor drain load impedance jointly, make this impedance and AB power-like amplifier impedance approximately equal, triple-frequency harmonics control minor matters are controlled micro-band with output second harmonic and have jointly been determined that transistor drain load impedance presents Low ESR at odd harmonic place, and at even-order harmonic place, present high impedance; By the size of control grid bias voltage, just can control the operating state that transistor is operated in respectively AB class operating state or contrary F class.And described in the utility model based on GaN HEMT AB/, against F class multi-mode power amplifier, be the frequency range 2.7 ~ 3.5GHz that is operated in S-band, thereby be with a wide range of applications.
The advantage that AB/ based on GaN high electron mobility transistor of the present utility model compared with prior art has against F class multi-mode power amplifier and useful technique effect: the GaN high electron mobility transistor that the utility model adopts, in this transistor gate bias voltage, be-during 2.5V, transistor is operated in AB class state, and now this power amplifier has advantages of high linearity; In this transistor gate bias voltage, be-during 3.1V, transistor is operated in contrary F class state, and now this power amplifier has high efficiency advantage.Therefore, power amplifier described in the utility model can be switched in AB class or two kinds of mode of operations of contrary F class, and can between high linearity, high efficiency two specific characters, select mode of operation.Thereby in wireless telecommunication system, can, according to actual conditions, when required power amplifier provides higher line to spend, regulate its transistor gate bias voltage to make it be operated in AB class operating state; When required power amplifier provides greater efficiency, regulate its transistor gate bias voltage to make it be operated in contrary F class operating state.And power amplifier of the present utility model is the frequency range 2.7 ~ 3.5GHz that is operated in S-band, thereby this power amplifier mainly can be applicable to the aspects such as relaying, satellite communication, radar; Present widely used bluetooth, ZIGBEE, wireless routing, wireless mouse etc., also used the frequency range of this wave band.
Accompanying drawing explanation
Fig. 1 is that GaN high electron mobility transistor AB/ described in the utility model is against F class multi-mode power amplifier functional-block diagram;
Fig. 2 is that GaN high electron mobility transistor AB/ described in the utility model is against F class multi-mode power amplifier circuit structure diagram;
Fig. 3 is GaN high electron mobility transistor AB/ described in the utility model against GaN HEMT partial enlarged drawing in F class multi-mode power amplifier;
Fig. 4 is that GaN high electron mobility transistor AB/ described in the utility model is V against F class multi-mode power amplifier at AB class bias voltage
g=-2.5V, efficiency and the output power curve figure of the actual measurement of frequency 3.3GHz place;
Fig. 5 is that GaN high electron mobility transistor AB/ described in the utility model is V against F class multi-mode power amplifier at contrary F class bias voltage
g=-3.1V, efficiency and the output power curve figure of the actual measurement of frequency 3.3GHz place.
In figure, 1 input microstrip line, 2 input capacitances, 3 first microstrip lines, 4 Input matching minor matters, 5 steady resistances, 6 second microstrip lines, 7 transistors, 8 the 3rd microstrip lines, 9 triple-frequency harmonics control minor matters, 10 the 4th microstrip lines, 11 the 5th microstrip lines, 12 output matching minor matters, 13 output capacitances, 14 output microstrip lines, 15 output second harmonics are controlled micro-band, 16 electric capacity two, 17 output decoupling capacitors one, 18 carriers, 19 input decoupling capacitors one, 20 electric capacity one, 21 input second harmonics are controlled micro-band, 22 input decoupling capacitors two, 23 input decoupling electrochemical capacitors three, 24 output decoupling capacitors two, 25 output decoupling electrochemical capacitors three, 26 transistor gates, 27 transistor drains, 28 input biasing networks, 29 output offset networks, 30 input matching networks, 31 output matching networks, the micro-band of 32 gate bias, the micro-band of 33 drain bias.
Embodiment
Below by accompanying drawing, also the utility model is described in further detail in conjunction with the embodiments; the embodiment that its accompanying drawing is described is exemplary; be necessary to be pointed out that at this described embodiment is just for to further explanation of the present utility model; and should not be understood as any restriction to the utility model protection range, the those of skill in the art in this field can make according to above-mentioned content of the present utility model improvement and the adjustment of some non-intrinsically safes.
The AB/ of the utility model based on GaN high electron mobility transistor is against F multi-mode power amplifier, its theory diagram as shown in Figure 1, in Fig. 1, comprise input matching network 30, output matching network 31, input biasing networks 28, output offset network 29 four modules, and GaN high electron mobility transistor (GaN HEMT) 7; Described input biasing networks 28 is connected with input matching network 30, and output offset network 29 is connected with output matching network 31, and transistor 7 is connected with output matching network 31 with input matching network 30 respectively.
Of the present utility model based on GaN high electron mobility transistor AB/ against F class multi-mode power amplifier circuit structure diagram as shown in Figure 2, in Fig. 2, described input matching network 30 is by inputting microstrip line 1, the first microstrip line 3, Input matching minor matters 4, the second microstrip line 6, forming at input capacitance 2 and the steady resistance 5 between the first microstrip line 3 and the second microstrip line 6 inputted between microstrip line 1 and the first microstrip line 3; Input microstrip line 1 with input capacitance 2 and be connected, input that capacitance 2 is connected with the first microstrip line (3), the first microstrip line (3) is connected with Input matching minor matters 4, Input matching minor matters 4 are connected with steady resistance 5, steady resistance 5 is connected with the second microstrip line 6; Wherein, steady resistance 5 and the input second harmonic of input in biasing networks 28 are controlled and are micro-ly with 21 to be connected;
Described output matching network 31 is controlled minor matters 9, the 5th microstrip line 11, output matching minor matters 12, output microstrip line 14, at the 5th microstrip line 11 and the output capacitance 13 of exporting between 50ohm microstrip line 14, is formed by the 3rd microstrip line 8, the 4th microstrip line 10, triple-frequency harmonics; Described the 3rd microstrip line 8 is connected with triple-frequency harmonics control minor matters 9, triple-frequency harmonics control minor matters 9 are connected with the 4th microstrip line 10, the 4th microstrip line 10 is connected with the 5th microstrip line 11, the 5th microstrip line 11 is connected with output matching minor matters 12, output matching minor matters 12 are connected, export capacitance 13 with output capacitance 13 and are connected with output microstrip line 14; Wherein, output capacitance 13 is with 15 to be connected with output second harmonic control in output offset network 29 is micro-;
Described input biasing networks 28 by input second harmonic control be micro-ly with 21, electric capacity 1, input decoupling capacitor 1, input decoupling capacitor 2 22, input decoupling electrochemical capacitor 3 23 and gate bias is micro-is with 32 to form; Described input second harmonic control micro-be with 21 is connected with electric capacity 1, electric capacity 1 is with 32 to be connected with gate bias is micro-, gate bias is micro-be with 32 with input that decoupling capacitor 1 is connected, gate bias micro-be with 32 with input that decoupling capacitor 2 22 is connected, gate bias micro-be with 32 with input decoupling capacitor 3 23 and be connected;
Described output offset network 29 by output second harmonic control be micro-ly with 15, electric capacity 2 16, output decoupling capacitor 1, output decoupling capacitor 2 24, output decoupling capacitor 3 25 and drain bias is micro-is with 33 to form; Described output second harmonic control micro-be with 15 is connected with electric capacity 2 16, electric capacity 2 16 and drain bias micro-be with 33 be connected, drain bias micro-be with 33 with export that decoupling capacitor 1 is connected, drain bias micro-be with 33 with export that decoupling capacitor 2 24 is connected, drain bias micro-be with 33 with export decoupling electrochemical capacitor 3 25 and be connected.
Transistor described in Fig. 17 is connected with output matching network 31 with input matching network 30 respectively, and specifically, in circuit structure Fig. 2, transistor gate 26 is connected with the second microstrip line 6 in input matching network 30; Transistor drain 27 is connected with the 3rd microstrip line 8 in output matching network 31, and transistor source is close to carrier 18 bottom ground connection, therefore covered.
Embodiment 1
In the present embodiment, GaN high electron mobility transistor is the middle electric 55 0.25mm grid long crystal pipes that provide; Substrate adopts Taconic RF-60, and thickness is 0.635mm; Described input microstrip line 1 and output microstrip line 14 are all used 50ohm microstrip line.
The long 6mm of input microstrip line 1, wide 0.9mm; The long 8.9mm of the first microstrip line 3, wide 1.78mm; The long 4.4mm of Input matching minor matters 4, wide 2mm; The long 3.85mm of the second microstrip line 6, wide 1.6mm; Input capacitance 2 is 10pF; Steady resistance 5 is 15ohm; The long 4.78mm of the 3rd microstrip line 8, wide 0.3mm; The long 4.9mm of the 4th microstrip line 10, wide 3.7mm; Triple-frequency harmonics controls the long 3.8mm of minor matters 9, wide 1.6mm; The long 7.5mm of the 5th microstrip line 11, wide 2.1mm; The long 3.94mm of output matching minor matters 12, wide 0.39mm; The long 6mm of output microstrip line 14, wide 0.9mm; Input second harmonic is controlled micro-21 long 12.8mm, wide 0.2mm of being with; Output second harmonic is controlled micro-15 long 12.7mm, wide 0.2mm of being with; Micro-32 long 26.3mm, the wide 0.9mm of being with of gate bias; Micro-33 long 24.3mm, the wide 0.9mm of being with of drain bias; Electric capacity 1 is 3.8pF; Input decoupling capacitor 1, input decoupling capacitor 2 22 and input decoupling capacitor 3 23 its capacity are followed successively by 10uF, 33000pF, 470pF; Output second harmonic is controlled micro-15 long 12.7mm, wide 0.2mm of being with; Electric capacity 2 16 is 5.5pF; Output decoupling capacitor 1, output decoupling capacitor 2 24 and output decoupling capacitor 3 25 its capacity are followed successively by 10uF, 33000pF, 470pF.
According to circuit structure shown in Fig. 2, connect each components and parts;
The utility model adopts synthesized signal generator 83732B and the P series power meter N1912A of Agilent company, and the D.C. regulated power supply DF1731SLL3A of second best plan Electronics Co., Ltd., carries out actual test.
According to the utility model based on GaN high electron mobility transistor AB/ against F class multi-mode power amplifier, at frequency 3.3GHz, be adjusted to-2.5V of offset gate voltage, GaN HEMT transistor 7 is operated in AB class state, power added efficiency is greater than 51.5%, and power output is greater than 36dBm; Be adjusted to-3.1V of offset gate voltage, GaN HEMT transistor 7 is operated in F
-1class state, PAE is greater than 59.5%, and power output is greater than 35.5dBm.Can find out, AB/ described in the utility model has higher efficiency and higher output power against F class multi-mode power amplifier under two kinds of bias voltages.And power amplifier of the present utility model is operated in the frequency range of S-band, its frequency is 3.3GHz, therefore can be used for the aspects such as relaying, satellite communication, radar; And present widely used bluetooth, ZIGBEE, wireless routing, wireless mouse etc.
Claims (8)
1. the AB/ based on GaN high electron mobility transistor is against F class multi-mode power amplifier, it is characterized in that comprising input biasing networks (28), output offset network (29), input matching network (30) and output matching network (31) four module, and transistor (7); Described input biasing networks (28) is connected with input matching network (30), and output offset network (29) is connected with output matching network (31), and described transistor (7) is connected with output matching network (31) with input matching network (30) respectively.
2. multi-mode power amplifier according to claim 1, it is characterized in that described transistor (7) adopts GaN high electron mobility transistor, its transistor gate (26) is connected with output matching network (31) with input matching network (30) respectively with transistor drain (27).
3. multi-mode power amplifier according to claim 1, it is characterized in that described input biasing networks (28) controls by input second harmonic electric capacity one (20) that micro-band (21) connects, the micro-band of gate bias (32) that electric capacity one (20) connects, the input decoupling capacitor one (19) that the micro-band of gate bias (32) connects, input decoupling electrochemical capacitor three (23) compositions that the input decoupling capacitor two (22) that the micro-band of gate bias (32) connects is connected with the micro-band of gate bias (32).
4. multi-mode power amplifier according to claim 1, it is characterized in that described output offset network (29) controls the electric capacity two (16) that micro-band (15) connects, the micro-band of drain bias (33) that electric capacity two (16) connects, output decoupling electrochemical capacitor three (25) compositions that the output decoupling capacitor two (24) that the output decoupling capacitor one (17) that the micro-band of drain bias (33) connects, the micro-band of drain bias (33) connect is connected with the micro-band of drain bias (33) by output second harmonic.
5. multi-mode power amplifier according to claim 1, it is characterized in that input capacitance (2) that described input matching network (30) is connected by input microstrip line (1), the first microstrip line (3) that input capacitance (2) connects, the second microstrip line (6) that the steady resistance (5) that the Input matching minor matters (4) that the first microstrip line (3) connects, Input matching minor matters (4) connect is connected with steady resistance (5) form; Wherein, steady resistance (5) is controlled micro-band (21) with the input second harmonic in input biasing networks (28) and is connected.
6. according to the multi-mode power amplifier described in claim 2 or 5, it is characterized in that described transistor (7) is positioned at carrier (18) upper, described transistor gate (26) is connected with the second microstrip line (6) in input matching network (30).
7. multi-mode power amplifier according to claim 1, is characterized in that triple-frequency harmonics that described output matching network (31) is connected by the 3rd microstrip line (8) controls minor matters (9), output matching minor matters (12), the output capacitance (13) that output matching minor matters (12) connect that triple-frequency harmonics controls the 4th microstrip line (10) that minor matters (9) connect, the 5th microstrip line (11) that the 4th microstrip line (10) connects, the 5th microstrip line (11) connect and export the output microstrip line (14) that capacitance (13) is connected and form; Wherein, output capacitance (13) is controlled micro-band (15) with the output second harmonic in output offset network (29) and is connected.
8. according to the multi-mode power amplifier described in claim 2 or 7, it is characterized in that described transistor (7) is positioned at carrier (18) upper, described transistor drain (27) is connected with the 3rd microstrip line (8) in output matching network (31).
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| CN201320538372.0U CN203457111U (en) | 2013-08-30 | 2013-08-30 | Class-AB/inverse class-F multi-mode power amplifier based on high-electron-mobility gallium nitride transistor |
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| CN201320538372.0U CN203457111U (en) | 2013-08-30 | 2013-08-30 | Class-AB/inverse class-F multi-mode power amplifier based on high-electron-mobility gallium nitride transistor |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103414437A (en) * | 2013-08-30 | 2013-11-27 | 电子科技大学 | AB/inverse F type multi-mode power amplifier based on gallium nitride transistor with high electro mobility |
| CN104617896A (en) * | 2015-02-28 | 2015-05-13 | 东南大学 | Broadband highly efficient continuous inverse class-F power amplifier and design method thereof |
| CN107743684A (en) * | 2016-08-10 | 2018-02-27 | 电子科技大学 | A kind of difference amplifier |
| CN112787598A (en) * | 2021-01-29 | 2021-05-11 | 河北雄安太芯电子科技有限公司 | W-band ultra-wideband low-noise amplifier |
-
2013
- 2013-08-30 CN CN201320538372.0U patent/CN203457111U/en not_active Expired - Fee Related
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103414437A (en) * | 2013-08-30 | 2013-11-27 | 电子科技大学 | AB/inverse F type multi-mode power amplifier based on gallium nitride transistor with high electro mobility |
| CN103414437B (en) * | 2013-08-30 | 2016-04-06 | 电子科技大学 | Based on GaN high electron mobility transistor AB/ against F class multi-mode power amplifier |
| CN104617896A (en) * | 2015-02-28 | 2015-05-13 | 东南大学 | Broadband highly efficient continuous inverse class-F power amplifier and design method thereof |
| CN104617896B (en) * | 2015-02-28 | 2017-07-28 | 东南大学 | Continuous inverse F power-like amplifiers and its design method of a kind of broadband high-efficiency |
| CN107743684A (en) * | 2016-08-10 | 2018-02-27 | 电子科技大学 | A kind of difference amplifier |
| CN107743684B (en) * | 2016-08-10 | 2020-11-03 | 电子科技大学 | Differential amplifier |
| CN112787598A (en) * | 2021-01-29 | 2021-05-11 | 河北雄安太芯电子科技有限公司 | W-band ultra-wideband low-noise amplifier |
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