CN1764064A - Millimeter wave amplifier - Google Patents
Millimeter wave amplifier Download PDFInfo
- Publication number
- CN1764064A CN1764064A CNA2005101138166A CN200510113816A CN1764064A CN 1764064 A CN1764064 A CN 1764064A CN A2005101138166 A CNA2005101138166 A CN A2005101138166A CN 200510113816 A CN200510113816 A CN 200510113816A CN 1764064 A CN1764064 A CN 1764064A
- Authority
- CN
- China
- Prior art keywords
- matching circuit
- input
- output
- line
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000006978 adaptation Effects 0.000 claims description 18
- 239000003990 capacitor Substances 0.000 claims description 18
- 230000008878 coupling Effects 0.000 claims description 5
- 238000010168 coupling process Methods 0.000 claims description 5
- 238000005859 coupling reaction Methods 0.000 claims description 5
- 239000002184 metal Substances 0.000 abstract description 10
- 238000004891 communication Methods 0.000 abstract description 3
- 230000003321 amplification Effects 0.000 description 6
- 238000013461 design Methods 0.000 description 6
- 238000003199 nucleic acid amplification method Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000012545 processing Methods 0.000 description 4
- 238000011027 product recovery Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- FEVBMCJUKWWWBT-BNIOFCGNSA-N 15-benzyl-18-[(1e,3e)-6-methoxy-3,5-dimethyl-7-phenylhepta-1,3-dienyl]-1,5,12,19-tetramethyl-2-methylidene-8-(2-methylpropyl)-3,6,9,13,16,20,25-heptaoxo-1,4,7,10,14,17,21-heptazacyclopentacosane-11,22-dicarboxylic acid Chemical compound N1C(=O)C(CC=2C=CC=CC=2)NC(=O)C(C)C(C(O)=O)NC(=O)C(CC(C)C)NC(=O)C(C)NC(=O)C(=C)N(C)C(=O)CCC(C(O)=O)NC(=O)C(C)C1/C=C/C(/C)=C/C(C)C(OC)CC1=CC=CC=C1 FEVBMCJUKWWWBT-BNIOFCGNSA-N 0.000 description 1
- FEVBMCJUKWWWBT-UHFFFAOYSA-N MCLF Natural products N1C(=O)C(CC=2C=CC=CC=2)NC(=O)C(C)C(C(O)=O)NC(=O)C(CC(C)C)NC(=O)C(C)NC(=O)C(=C)N(C)C(=O)CCC(C(O)=O)NC(=O)C(C)C1C=CC(C)=CC(C)C(OC)CC1=CC=CC=C1 FEVBMCJUKWWWBT-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001413 cellular effect Effects 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002500 effect on skin Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
- H01P3/00—Waveguides; Transmission lines of the waveguide type
- H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
- H01P3/08—Microstrips; Strip lines
- H01P3/081—Microstriplines
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
- H03F3/602—Combinations of several amplifiers
- H03F3/604—Combinations of several amplifiers using FET's
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/38—Impedance-matching networks
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microwave Amplifiers (AREA)
Abstract
The application provides a millimeter wave amplifier used in a wireless communication system. The millimeter wave amplifier includes a transistor for amplifying a RF signal, an input matching circuit for matching the RF signal passing through an input port to the transistor, a bias voltage providing unit for providing a bias voltage to the transistor, an output matching circuit for transmitting the RF singal amplified by the transistor to an output port, and a DC module and a RF matcher, wherein included is a first wire and a second wire arraied to have capacitance, respectively connected between the input port and the input matching circuit, and between an output circuit and the output port. The DC module and the RF matcher which are composed of metal wires have a same capacitance and high stability which is insusceptible with an insulating thickness.
Description
The cross reference of related application
The application requires in korean patent application 2004-83335 number priority and right thereof of submission on October 18th, 2004, and its disclosed content is all quoted at this.
Technical field
The present invention relates to a kind of in wireless communication system employed millimeter wave amplifier, more particularly relate to a kind ofly can improve the stability and the millimeter wave amplifier of product recovery rate.
Background technology
Usually, employed millimeter wave amplifier comprises the transistor that is used for amplification input signal in wireless communication system, the input matching circuit that input signal and transistor are mated, for providing the bias voltage of bias voltage, transistor provides the unit, to match the output matching circuit of output through the free of losses of transistor amplifying signal, be connected between input and the input matching circuit and the metal-insulator-metal type between output and the output matching circuit (MIM) capacitor, direct current (DC) bias voltage that the unit provides be provided and mate radio frequency (RF) signal by bias voltage in order to isolated.In other words, MIM electric capacity prevents to offer the other transistor of certain transistorized bias voltage influence, and coupling radio frequency (RF) signal.
Fig. 1 shows the structure of the MIM capacitor that is used for millimeter wave band (greater than 30GHz) extremely high frequency (EHF) amplifier.This structure comprises metal electrode 2, the dielectric film 3 and the post 4 between the metal electrode 2 on the metal electrode 1 of bottom and top on the metal electrode 1 of a bottom, a top, and the metal electrode 2 on top is connected to the metal electrode 1 of another bottom by it.
The capacitance that has the MIM capacitor of said structure depends on the thickness and the area of dielectric film 3.In manufacture process, the area of dielectric film 3 can comparatively accurately be controlled, but thickness may change according to processing conditions.Therefore, it is difficult making the electric capacity with accurate consistent capacitance.Although each manufacturing company, laboratory and educational institution may be slightly different,, capacitance usually-10% and+change between 10%.Because this species diversity, formed capacitor may have the capacitance different with design load, so the decline of product recovery rate, and product cost increases, or the like.
In the extremely high frequency EHF of millimeter wave band amplifier, the matching frequency of match circuit can change easily along with the minor variations of capacitance, so the operating frequency of amplifier also changes thereupon.When operating frequency changed, the gain on the operating frequency of needs can descend, and this has a strong impact on RF Design of Amplifier and manufacturing.
Simultaneously, stability is very important for the design amplifier circuit.Parameter K and B1 shown in the definition represents stability below.For absolute, K should greater than 1 (K＞1) and | Δ | should be less than 1 (| Δ |＜1).When above-mentioned condition does not satisfy, on certain characteristic frequency, can take place vibration make the amplifier cisco unity malfunction (referring to pp.616-617, " Microwave Engineering ", 2nd Ed., David M.Pozar, John Wiley; Son, Inc., 1998).
Stability is very important for the design amplifier.Design amplifier employed parameter K and | Δ | playing the part of important role, still, be difficult to the decision amplifier whether because K and | Δ | value big or little and more stable.Yet, as described below, when its greater than 1 the time, μ is a known stable parameter:
Though " K-Δ test be absolute at mathematical stringent condition, this can not be used for the relative stability of two or more equipment of comparison, because this relates to the constraint of two parameters.Yet, derive a new criterion, that be exactly K-Δ parametric joint in the test that only relates to single parameter μ.Like this, if μ＞1, equipment is exactly absolute stable.In addition, we can say that big more μ value means bigger stability." (referring to pp.616-617, " Microwave Engineering ", 2nd Ed., David M.Pozar, John Wiley ﹠amp; Son, Inc., 1998).
Therefore, operation parameter μ, the stability of MIM capacitor will with the comparing of MCLF.
|Δ|＝|S
11S
22-S
12S
21|＜1
In traditional RF power amplifier, MIM capacitor is used to the isolated and RF coupling of DC bias voltage, so, increased another circuit improve stability parameter K and | Δ |.Here, when comprising resistance and capacitor in the circuit that increases, the performance of amplifier can worsen because crosstalk, and the RF power amplifier can take more space.
Summary of the invention
The purpose of this invention is to provide a kind of millimeter wave amplifier, it can be by improving the product recovery rate according to the difference of processing conditions minimum capacitance amount, and keep high stability, even if make that increasing circuit performance does not worsen yet.
One aspect of the present invention provides a kind of millimeter wave amplifier, and it comprises the transistor that is used for amplification RF signal; Be used to mate the input matching circuit that offers transistorized RF signal through input; For providing the bias voltage of bias voltage, transistor provides the unit; Be used for harmless coupling and amplify the output matching circuit of the RF signal that outputs to output by transistor; DC module and RF adaptation comprising being arranged in the first band line and the second band line with capacitance, and are connected between input and the input matching circuit and between output matching circuit and output separately.
Input matching circuit and output matching circuit all comprise a plurality of (microstrip lines) that are connected between input and the output, and are connected in parallel on open stub or the closed stub of microstrip line as electric capacity.
Capacitance depends on that first is with the distance and first between the line and the second band line to be with line and second to be with the width and the length of each bar in the line.
Description of drawings
At length described by preferred embodiment with reference to accompanying drawing, above-mentioned and other characteristics of the present invention and advantage can become more obvious for those skilled in the art, wherein:
Fig. 1 is the topology view that is used for the MIM capacitor of traditional millimeter wave amplifier;
Fig. 2 is the circuit diagram according to the millimeter wave amplifier of example embodiment of the present invention;
Fig. 3 is the view of employed direct current (DC) module and radio frequency (RF) adaptation in the millimeter wave amplifier of the present invention; And
Fig. 4 is according to the present invention and the measurement result figure of the stability parameter μ of MIM capacitor
Embodiment
Hereinafter will describe example embodiment of the present invention in detail.Yet the present invention is not limited to embodiment described below, but can realize with dissimilar.Therefore, illustrated embodiment is for the invention provides integrality, and intactly informs scope of the present invention to those of ordinary skills.
Fig. 2 is the circuit diagram according to the millimeter wave amplifier of example embodiment of the present invention.
Radio frequency (RF) signal that will offer input 100 by direct current (DC) module and RF adaptation 101 is input to input matching circuit 110.Input matching circuit 110 comprises the microstrip line 111 and 112 that is connected between input and the output, and open stub 113 in parallel with microstrip line 111 and 112, that be used as capacitor.
The output of input matching circuit 110 is amplified through transistor 114, is input to output matching circuit 120 then.Output matching circuit 120 comprises the microstrip line 121 and 122 that is connected between input and the output, is used as inductance, the microstrip line 123 as inductance in parallel with microstrip line 121 and 122, and being connected on capacitor 124 and closed stub 125 between microstrip line 123 and the earth terminal, closed stub 125 is made inductance and is used.
The output of output matching circuit 120 is input to input matching circuit 130 through DC module and radio frequency adaptation 126.Input matching circuit 130 comprises the microstrip line 131 and 132 that is series between input and the output as inductance, and be parallel to microstrip line 131 and 132 and earth terminal between, as the closed stub 133 of inductance.
The output of input matching circuit 130 is amplified through transistor 134, offers output 140 through output matching circuit 135, DC module and radio frequency adaptation 136 then.
In the transistor 114 and 134 each provides unit 150,160,170 and 180 that dc offset voltage is provided by bias voltage.Bias voltage provides in the unit 150 to 180 each to comprise microstrip line L and is series at voltage source V dc between the output and ground, and the capacitor C in parallel with voltage source V dc.
In the above in the millimeter wave amplifier of the present invention of Miao Shuing, direct current module and RF adaptation 101,126 and 136 coupling radiofrequency signals and prevent to offer in transistor 114 and 134 one bias voltage and influence match circuit or another transistor.Therefore, the direct current module should have identical capacitance with RF adaptation 101,126 with 136.For this reason, in the present invention, direct current module and RF adaptation 101,126 and 136 are made of the first band line 10 and the second band line 12, and they are arranged at a distance of consistent each other distance, as shown in Figure 3.The present invention adjust the first band line 10 and second band between the line 12 apart from G, and the width W and the length L of each bar in the band line 10 and 12, thereby decision capacitance.Here, be air between the first band line 10 and the second band line 12, dielectric constant is exactly the dielectric constant of air like this.In Fig. 3, numeral 11 and 12 has been indicated the pad that the first band line 10 and the second band line 12 are connected with other line.
The capacitor 124 of output matching circuit 120 also can be by shown in Figure 3 constituting.
Simultaneously, present embodiment described have four cellular constructions millimeter wave amplifier as example, but the present invention is not confined to this.In addition, input matching circuit 110 and 130 and output matching circuit 120 and 135 form by microstrip line and capacitor, it is as inductance, but the present invention is not confined to this, so match circuit can have other form.
Above-mentioned millimeter wave amplifier work according to illustrated embodiments of the invention is as follows.
The RF signal that offers input 100 is input to input matching circuit 110 through DC module and RF adaptation 101, and the output of input matching circuit 110 is through transistor 114 amplifications and offer output matching circuit 120.Input matching circuit 110 prevents to take place at the input of transistor 114 reflection of RF signal.Input matching circuit 120 is eliminated the signal of other frequency that produces in amplification process.
Send to input matching circuit 130 from the RF signal of output matching circuit 120 outputs through DC module and RF match circuit 126, the output of input matching circuit 130 is amplified through transistor 134, offers output matching circuit 135 then.Input matching circuit 130 prevents the input generation input rf signal reflection at transistor 134.Output matching circuit 135 is eliminated the signal of other frequency that produces in amplification process.
Send to output 140 from the RF signal of output matching circuit 135 outputs through DC module and RF adaptation 136.Therefore, the RF signal expectably is exaggerated.
As shown in Figure 3, the RF adaptation 101,126 and 136 that the present invention includes the DC module and form, wherein being adjusted so that determine capacitance between the first band line 10 and the second band line 12 apart from G and band line 10 and 12 width W and length L separately by the first band line 10 and the second band line 12.Especially, when reducing apart from G between two strip line 10 and 12, capacitance increases, and when the length of two strip line 10 and 12 reduced, capacitance and stray inductance amount increased.Here, two strip line 10 and 12 width W are more little, and their resistance value is high more.
For example, the first band line 10 and the second band line 12 can form the thickness between 2 to the 3 μ m.Because skin effect, in millimeter wave band, the RF signal concentrates on the surface, so although because conditions such as processing cause thickness to have ± 10% variation, capacitance can not be affected.
Fig. 4 shown respectively between the DC module used among stability parameter μ and the present invention and the RF adaptation and and metal-insulator-metal type (MIM) capacitor between the functional relation of frequency.Line A represents the measurement result of MIM capacitor stability, is that 0.1 μ m, width are that 15 μ m and length are the dielectric film of 15 μ m comprising a thickness.Line B has represented the measurement result of DC module and RF adaptation stability, comprising width W be 10 μ m, apart from G be 10 μ m and length L be 400 μ m first the band line 10 and second the band line 12.
As seen, the DC module of using among the present invention and the stability parameter μ of RF adaptation are better than MIM capacitor.Therefore, in millimeter wave amplifier of the present invention, being used to improve stable adjunct circuit can minimize, and also can minimize thereby crosstalk.
When DC module of the present invention and RF adaptation are applied to extremely high frequency (EHF) amplifier at high band, the length of the first band line 10 and the second band line 12 will shorten, therefore, it is possible making the EHF amplifier have high stability and to take little space effectively.
As mentioned above, the present invention prevents to influence match circuit or other amplifier for the DC bias voltage of amplification RF signal, and comprises only by band line DC module and RF adaptation that constitute, that be used to mate the RF signal.That the DC module that is made of the metal tape line and RF adaptation have is consistent, change irrelevant capacitance with dielectric thickness, like this, show the minimum change of capacitance according to processing conditions, so the product recovery rate increases, and to need not be that better stability increases other circuit.In addition because capacitance depend on band between the line distance and the width and the length of every strip line, can easily embed small capacitance, so without limits to circuit design.
After having illustrated and having described the present invention with reference to certain example embodiment, do not depart from that claims are defined, carried out under the situation of the spirit and scope of the present invention in form and the modification on the details will be understood by those skilled in the art.
Claims (3)
1, a kind of millimeter wave amplifier comprises:
Amplify the transistor of radio frequency (RF) signal;
Input matching circuit is used for coupling and supplies to transistorized RF signal through input;
For providing the bias voltage of bias voltage, transistor provides the unit;
Output matching circuit, the RF signal that is used for being amplified by transistor sends to output; And
Direct current (DC) module and RF adaptation comprise being arranged in the first band line and the second band line with a capacitance, and are connected between input and the input matching circuit separately and between output matching circuit and output.
2, millimeter wave amplifier as claimed in claim 1, wherein each input matching circuit and output matching circuit comprise:
Be connected on many microstrip lines between input and the output; And
With one of the open stub of microstrip line parallel and closed stub, and it is as capacitor.
3, millimeter wave amplifier as claimed in claim 1, capacitance wherein depend on that first is with the distance and first between the line and the second band line to be with line and second to be with the width and the length of each bar in the line.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020040083335A KR20060034176A (en) | 2004-10-18 | 2004-10-18 | Millimeter-wave amplifier |
| KR83335/04 | 2004-10-18 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1764064A true CN1764064A (en) | 2006-04-26 |
| CN100466466C CN100466466C (en) | 2009-03-04 |
Family
ID=36748044
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB2005101138166A Expired - Fee Related CN100466466C (en) | 2004-10-18 | 2005-10-17 | Millimeter wave amplifier |
Country Status (2)
| Country | Link |
|---|---|
| KR (1) | KR20060034176A (en) |
| CN (1) | CN100466466C (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101510763B (en) * | 2009-03-06 | 2011-11-16 | 电子科技大学 | Millimeter-wave monolithic integrated power amplifier |
| CN102655395A (en) * | 2012-05-23 | 2012-09-05 | 中国电子科技集团公司第五十五研究所 | Amplifier circuit with cross wiring of direct-current signals and microwave signals |
| CN102655394A (en) * | 2012-05-23 | 2012-09-05 | 中国电子科技集团公司第五十五研究所 | Amplifier circuit with cross wiring of direct-current signals and microwave signals |
| CN101662263B (en) * | 2008-08-27 | 2012-11-21 | 中国科学院微电子研究所 | Bias circuit used in Ku waveband internally-matched field effect transistor |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100801570B1 (en) * | 2006-12-05 | 2008-02-11 | 한국전자통신연구원 | Millimeter-wave amplifier |
| CN115694380B (en) * | 2022-10-30 | 2023-04-28 | 北京航空航天大学 | Dual-frequency broadband power amplifier and matching branch design method thereof |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05152976A (en) * | 1991-07-04 | 1993-06-18 | Hitachi Ltd | High frequency power amplifier circuit |
| CN1076814A (en) * | 1992-11-28 | 1993-09-29 | 浙江大学 | Wave-guide input-output type microstrip amplifier |
| JPH10126173A (en) * | 1996-10-18 | 1998-05-15 | Hitachi Denshi Ltd | Power amplifier |
| JPH11112249A (en) * | 1997-10-03 | 1999-04-23 | Hitachi Ltd | High frequency power amplifier module |
| JP3847262B2 (en) * | 2003-02-12 | 2006-11-22 | シャープ株式会社 | High frequency circuit and low noise down converter provided with the same |
-
2004
- 2004-10-18 KR KR1020040083335A patent/KR20060034176A/en not_active Application Discontinuation
-
2005
- 2005-10-17 CN CNB2005101138166A patent/CN100466466C/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101662263B (en) * | 2008-08-27 | 2012-11-21 | 中国科学院微电子研究所 | Bias circuit used in Ku waveband internally-matched field effect transistor |
| CN101510763B (en) * | 2009-03-06 | 2011-11-16 | 电子科技大学 | Millimeter-wave monolithic integrated power amplifier |
| CN102655395A (en) * | 2012-05-23 | 2012-09-05 | 中国电子科技集团公司第五十五研究所 | Amplifier circuit with cross wiring of direct-current signals and microwave signals |
| CN102655394A (en) * | 2012-05-23 | 2012-09-05 | 中国电子科技集团公司第五十五研究所 | Amplifier circuit with cross wiring of direct-current signals and microwave signals |
| CN102655395B (en) * | 2012-05-23 | 2014-12-10 | 中国电子科技集团公司第五十五研究所 | Amplifier circuit with cross wiring of direct-current signals and microwave signals |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20060034176A (en) | 2006-04-21 |
| CN100466466C (en) | 2009-03-04 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10122325B2 (en) | Distributed amplifier with improved stabilization | |
| US7633337B2 (en) | Feedback-type variable gain amplifier and method of controlling the same | |
| US4025873A (en) | Broadband, microwave, two-stage, stagger-tuned, field effect transistor amplifier | |
| JP4206589B2 (en) | Distributed amplifier | |
| US5028879A (en) | Compensation of the gate loading loss for travelling wave power amplifiers | |
| US5046155A (en) | Highly directive, broadband, bidirectional distributed amplifier | |
| US7123073B2 (en) | Amplifier and frequency converter | |
| CN1764064A (en) | Millimeter wave amplifier | |
| US20020067212A1 (en) | Micro-wave power amplifier | |
| US4973918A (en) | Distributed amplifying switch/r.f. signal splitter | |
| US4390851A (en) | Monolithic microwave amplifier having active impedance matching | |
| EP2193601B1 (en) | A distributed low noise amplifier | |
| EP0625822B1 (en) | Semiconductor integrated circuit | |
| EP0403176A2 (en) | Continually variable analog phase shifter | |
| US20080030278A1 (en) | Distributed amplifier having a variable terminal resistance | |
| US6657497B1 (en) | Asymmetric, voltage optimized, wideband common-gate bi-directional MMIC amplifier | |
| KR101678132B1 (en) | Distributed power amplifier with active matching | |
| JP3373435B2 (en) | Resistive feedback transistor | |
| US6690231B1 (en) | Gain stage that minimizes the miller effect | |
| JP2555726B2 (en) | Feedback type field effect transistor amplifier | |
| US10447220B2 (en) | Variable gain amplifier | |
| JPS63219210A (en) | Fet amplifier | |
| US6714095B2 (en) | Tapered constant “R” network for use in distributed amplifiers | |
| JPH0758870B2 (en) | Low feedback amplifier | |
| JPH05129854A (en) | Wide band fet amplifier |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C17 | Cessation of patent right | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20090304 Termination date: 20101017 |