CN1076814A - Wave-guide input-output type microstrip amplifier - Google Patents
Wave-guide input-output type microstrip amplifier Download PDFInfo
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- CN1076814A CN1076814A CN 92108649 CN92108649A CN1076814A CN 1076814 A CN1076814 A CN 1076814A CN 92108649 CN92108649 CN 92108649 CN 92108649 A CN92108649 A CN 92108649A CN 1076814 A CN1076814 A CN 1076814A
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 4
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Abstract
A kind of Wave-guide input-output type microstrip amplifier is characterized in that the progression of microstrip amplifier can be selected voluntarily, is provided with a plurality of discrete square metal islands as match circuit in the microstrip line both sides, and the little band in the circuit adopts seven-layer structure.Advantages such as it is adjustable relatively to have a number of stages of amplification with prior art, easily reaches the optimum Match state, and ground connection is reliable, and power output is stable.Can be widely used in the systems such as microwave communication, navigation, ground satellite station and radar.
Description
The present invention relates to a kind of nonreciprocal waveguide device.
Existing Waveguide-microbelt amplifier by input waveguide-coax-microstrip converter, little band amplifying circuit, export little band-coaxial-waveguide switch, amplifier power supply power supply circuits and shielding box and form.Amplifier circuit adopts the fixedly global design of progression, and wherein match circuit is the integral type circuit, and little band adopts five-layer structure, and ground connection is with the screw earthing mode in the circuit.Its defective: circuit is difficult for debugging, and amplifier progression can not increase or reduce, and ground connection is soft contact, and the ground connection effect is not good enough, and heat dispersion is poor, and device performance is easily degenerated after the long-term work, and power drops significantly.
The object of the present invention is to provide a kind of power stability, debug Wave-guide input-output type microstrip amplifier easily.Amplifier circuit adopts the square metal islands match circuit of a plurality of discretes, and little band adopts seven-layer structure, thereby has improved the reliability of microstrip amplifier with conductor pin ground connection.
The drawing explanation:
Fig. 1 is this Wave-guide input-output type microstrip amplifier structural representation.
Fig. 2 is the Wave-guide input-output type microstrip amplifier left side view, i.e. the input view.
Fig. 3 is the Wave-guide input-output type microstrip amplifier right side view, i.e. the output view.
Fig. 4 is a microstrip amplifier circuit structure block diagram.
Fig. 5 is the equivalent circuit diagram of Wave-guide input-output type microstrip amplifier.
Fig. 6 is a single-stage amplifying circuit A1n microstrip circuit layout plan.
Fig. 7 is the microstrip circuit layout plan of output microwave signal monitoring circuit.
Fig. 8 is the cutaway view of input waveguide-coax-microstrip converter and output little band-coaxial-waveguide switch.
Fig. 9 is the vertical view of input waveguide-coax-microstrip converter and output little band-coaxial-waveguide switch.
Figure 10 is the composite microband structural representation.
Figure 11 is the schematic diagram of shielding box structure.
Below in conjunction with the drawing explanation, describe particular content of the present invention in detail.
Wave-guide input-output type microstrip amplifier of the present invention comprises input waveguide-coax-microstrip converter 1, little band amplifying circuit 2, exports little band-coaxial-waveguide switch 3, amplifier power supply circuit 4 and shielding box 5.It is characterized in that little band amplifying circuit 2 is by a plurality of single-stage amplifying circuit A1n, blocking condenser A2n and output microwave signal monitoring circuit A3 cascade form, wherein the little band amplifying circuit of single-stage A1n is by field effect transistor A1n.1, input and output matching circuit A1n.2 and A1n.3, input and output microstrip line A1n.4 and A1n.5, grid leak bias line A1n.6 and A1n.12, the little strip resistance A1n.7 of vibrationproof in the gate bias circuit, microstrip capacitor A1n.8, earthing conductor post A1n.9, grid voltage lead hole A1n.11, drain bias circuit medium-high frequency bypass microstrip capacitor A1n.13, earthing conductor post A1n.14, leaking voltage lead wires through hole A1n.16 constitutes, field effect transistor A1n.1 is by two conductor pins or screw A1n.17 ground connection, match circuit A1n.2 and A1n.3 constitute by being positioned near the square metal islands of input and output microstrip line and field effect transistor A1n.1 grid and drain electrode, drain-to-gate voltage passes the junction that hole A1n.11 and A1n.16 add to high resistant line and the fan-shaped low-resistance line of grid leak bias line respectively with insulation thin wire A1n.10 and A1n.15, and the earthing conductor post passes this substrate openings and reinforces the copper earth plate screw thread and connect and form or pressure-pad goes out from substrate openings during with the pressure welding of reinforcing copper earth plate with microstrip substrate tin post formation from microstrip substrate with thin copper bar; Coupling line, the detector diode A3.6 on the coupling arm, diode ground capacity piece A3.7 and ground hole A3.8, detection output line A3.4 and the detection output line aperture A3.5 that output microwave signal monitoring circuit A3 is made of input matching circuit A3.1, microstrip line A3.2 and A3.3, isolate the resistance A3.14 that build-out resistor A3.9 and microwave short circuit metal derby A3.10, filter inductance A3.13 and electric capacity A3.12 and antistatic on the arm burn diode and form; The input of the input microstrip line A1I.4 of single-stage microstrip amplifier A1I is connected at the I place with input waveguide-coax-microstrip converter 1, the output termination coupling capacitance A2I of its output microstrip line A1I.5, successively connect identical amplifying circuit A1n and coupling capacitance A2n thereafter, last coupling capacitance A2n is connected with the input of output microwave signal monitoring circuit A3 microstrip line A3.2, direct current detection output VDC of output microwave signal monitoring circuit A3 is connected with the warning circuit in the communication equipment, and another output of exporting the microwave signal microstrip line is connected at 0 place with output-coaxial-waveguide switch 3.
Little band in the amplifier is a kind of composite microband that is made of little band conduction band circuit Gold plated Layer AD1, conduction band circuit copper layer AD2, medium packed layer AD3, original little band deposited copper ground connection thin layer AD4, ground connection Gold plated Layer AD5, ground connection soldering layer AD6, reinforcing copper earth plate layer AD7, and this little band is to be formed by micro strip after gold-plated and the pressure welding of reinforcing copper earth plate.
In the middle of the metallic shield box layer of metal separator respectively with upper cover plate 51 and lower cover 52, make it be divided into up and down two space I and II, as shown in figure 11, little band amplifying circuit is arranged in the upper half-space I, input waveguide-coax-microstrip converter is arranged in the left part of shielding box, export little band-coaxial-waveguide switch and be arranged in the right part of shielding box, power circuit is arranged in the lower half-space II.For avoiding the influence of upper cover plate, below upper cover plate, stick layer of absorbent 53 to microwave circuit.Supply socket 41 is connected with external power.
The conversion equipment that the T shape cylindrical metal rod 12 that input waveguide-coax-microstrip converter 1 is that 11, the upper ends of rectangular waveguide by a section termination short circuit input opening are connected with the input microstrip line of microstrip amplifier A1I at the I place, the thick cylinder in lower end stretches in the waveguide, support with cylindrical teflon insulation ring 13 therebetween constitutes.Export little band-coaxial-waveguide switch 3 and have identical structure with input converter 1.
With existing technology relatively, this programme has the following advantages:
1. the progression A1n of this microstrip amplifier is according to amplifier maximum gain design, and the amplifier progression A1n that specifically works can freely select according to the concrete gain of required amplifier.The amplifier of different output power and different progression can be realized by a shared microstrip amplifier.And existing its progression of microstrip amplifier is fixed.
2. the microstrip line both sides are provided with a plurality of discrete square metal islands, therefrom select the optimum Match circuit that several islands form microstrip amplifier.Match circuit of the prior art is the integral type circuit, can not reach the optimum Match state.
3. the little band in this microstrip amplifier adopts seven-layer structure, is to carry out the face welding with the certain thickness copper coin behind one deck tin of burn-oning on little band grounded metal laminar surface of existing five-layer structure, has solved microstrip circuit face problem with grounding like this.In addition, the earthing conductor post passes aperture the microstrip substrate and reinforces the copper earth plate screw thread and connect and form or with the microstrip substrate tin post formation that pressure-pad goes out from substrate openings when reinforcing the copper earth plate pressure welding, ground connection is reliable like this with thin copper bar from microstrip substrate top.
4. this Wave-guide input-output type microstrip amplifier power output is stable, and the general power output of prior art descends 10~40%.
Embodiment:
It is 8.2~8.5GHz that the Wave-guide input-output type microstrip amplifier of using in the microwave signal transmitter adopts this programme to make bandwidth of operation, and power output is 200mw or 500mw, and gain is respectively the microwave power amplifier of 21db and 25db, and cascade amplifier adopts level Four; Coupling capacitance adopts 20PF; Microstrip circuit in the amplifier adopts seven-layer structure, and ground floor is a conduction band circuit Gold plated Layer, and the second layer is a conduction band circuit copper layer, the 3rd layer is dielectric layer, and the 4th layer is original ground connection copper layer, and layer 5 is gold-plated ground plane, layer 6 is the soldering layer, and layer 7 is for reinforcing copper earth plate; 21 metal islands are respectively arranged in input microstrip line both sides at pipe, each island area is 1 * 1 millimeter, 24 metal islands respectively distribute in output microstrip line both sides, each island area is 1 * 1 millimeter, and usefulness when making the debugging match circuit uses number parameter according to field effect transistor in debugging of island to determine, when power output is 200mw, microstrip amplifier progression is three grades, and when power output was 500mw, microstrip amplifier progression was level Four.
Claims (2)
1, a kind of Wave-guide input-output type microstrip amplifier, comprise input waveguide-coax-microstrip converter 1, little band amplifying circuit 2, export little band-coaxial-waveguide switch 3, amplifier power supply circuit 4 and shielding box 5, it is characterized in that: little band amplifying circuit 2 is by a plurality of single-stage amplifying circuit A1n, blocking condenser A2n and output microwave signal monitoring circuit A3 cascade form, wherein single-stage microstrip circuit A1n is by field effect transistor A1n.1, input and output matching circuit A1n.2 and A1n.3, input and output little band A1n.4 and A1n.5, grid leak bias line A1n.6 and A1n.12, the little strip resistance A1n.7 of vibrationproof in the gate bias circuit, microstrip capacitor A1n.8, earthing conductor post A1n.9, grid voltage lead hole A1n.11 and drain bias circuit medium-high frequency bypass microstrip capacitor A1n.13, earthing conductor post A1n.14 and leakage voltage lead wires through hole A1n.16 constitute, field effect transistor A1n.1 is by two conductor pins or screw A1n.17 ground connection, match circuit A1n.2 and A1n.3 constitute by being positioned near the square metal islands of input and output microstrip line and field effect transistor A1n.1 grid and drain electrode, drain-to-gate voltage passes the junction that through hole A1n.11 and A1n.16 add to the high resistant line and the fan-shaped low-resistance line of grid leak bias line respectively with insulation thin wire A1n.10 and A1n.15, the earthing conductor post passes this substrate openings with thin copper bar and connects and form with reinforcing the copper earth plate screw thread from microstrip substrate top, or with the microstrip substrate tin post formation that pressure-pad goes out from substrate openings when reinforcing the copper earth plate pressure welding; Coupling line, the detector diode A3.6 on the coupling arm, diode ground capacity piece A3.7 and ground hole A3.8, detection output line A3.4 and the detection output line aperture A3.5 that output microwave signal monitoring circuit A3 is made of input matching circuit A3.1, microstrip line A3.2 and A3.3, isolate the resistance A3.14 that build-out resistor A3.9 and microwave short circuit metal derby A3.10, filter inductance A3.13 and electric capacity A3.12 and antistatic on the arm burn diode and form; The input of microstrip amplifier A11 input microstrip line A11.4 is connected at the I place with the output microstrip line of input waveguide-coax-microstrip converter, its output terminals A 11.5 meets coupling capacitance A21, successively connect identical amplifying circuit A1n and coupling capacitance A2n thereafter, be connected a direct current detection of output microwave signal monitoring circuit A3 output V at last with the input of the input microstrip line A3.2 of output microwave signal monitoring circuit A3 by coupling capacitance A2n
DCBe connected with the warning circuit in the communication equipment, the output of another output microwave signal microstrip line A3.2 is connected at 0 place with output little band-coaxial-waveguide switch.
2, according to the Wave-guide input-output type microstrip amplifier of claim 1, it is characterized in that: described little band is a kind of composite microband that is made of little band conduction band circuit Gold plated Layer AD1, conduction band circuit copper layer AD4, medium packed layer AD3, original little band deposited copper ground connection thin layer AD4, ground connection Gold plated Layer AD5, ground connection soldering layer AD6 and reinforcing copper earth plate layer AD7, and this little band is to be formed by micro strip after gold-plated and the pressure welding of reinforcing copper earth plate.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN 92108649 CN1076814A (en) | 1992-11-28 | 1992-11-28 | Wave-guide input-output type microstrip amplifier |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN 92108649 CN1076814A (en) | 1992-11-28 | 1992-11-28 | Wave-guide input-output type microstrip amplifier |
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CN1076814A true CN1076814A (en) | 1993-09-29 |
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CN 92108649 Pending CN1076814A (en) | 1992-11-28 | 1992-11-28 | Wave-guide input-output type microstrip amplifier |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100466466C (en) * | 2004-10-18 | 2009-03-04 | 韩国电子通信研究院 | Millimeter wave amplifier |
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1992
- 1992-11-28 CN CN 92108649 patent/CN1076814A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100466466C (en) * | 2004-10-18 | 2009-03-04 | 韩国电子通信研究院 | Millimeter wave amplifier |
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