CN1545214A - Low temperature and low noise factor amplifying circuit - Google Patents
Low temperature and low noise factor amplifying circuit Download PDFInfo
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- CN1545214A CN1545214A CNA2003101153913A CN200310115391A CN1545214A CN 1545214 A CN1545214 A CN 1545214A CN A2003101153913 A CNA2003101153913 A CN A2003101153913A CN 200310115391 A CN200310115391 A CN 200310115391A CN 1545214 A CN1545214 A CN 1545214A
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Abstract
The invention is a low-temperature extremely low-noise coefficient amplifying circuit and its character: it adopts microband mixing circuit, adopts high-Q value spiral inductance coil and high-Q value capacitor in the input matching network in order to reduce input circuit loss and then noise; the spiral inductance coil's two ends adopts double parallel microbnd line structure, reducing parasitic parameters; the microband length of the negative feedback network is less than 1/10 working wavelength, reducing parasitic vibration; it adopts small resistances in input and output matching networks, enhancing value of real part of impedance; in the output matching network, the resistances in series with main lines and branch lines are proper to make the gain larger; the input and output matching networks is connected to 1/4 working wavelength branch lines, reducing circuit size to make the circuit able to work at low temperature for a long period. It can meet the requirements of low noise, larger gain, low standing wave ratio, working at low temperature for a long time, etc.
Description
Technical field
Low temperature utmost point low-noise factor amplifying circuit relates to the microwave communication circuit technical field, particularly receiver front end amplifying circuit design field.
Background technology
Radio communication, especially spread spectrum standard wireless communication technology have obtained extensive popularization and have greatly paid close attention to since 20th century, entered practicality the sixties.The major part of forming wireless communication hardware is a radio-frequency front-end, and radio-frequency front-end is connected to form by amplifying circuit and pre-filtering circuit, sees Fig. 1, and signal is received by radio-frequency antenna 11, by signal cable input front end treatment circuit.Front-end processing circuit is made up of filter 13 and low noise amplifier 15, works in the cryogenic vacuum chamber 12, and temperature controller 17 control vacuum chambers keep the working temperature of 70K, and the temperature in the vacuum chamber is by measuring feedback with the cold head 16 of amplifier Mechanical Contact.This temperature can not only reduce the amplifying circuit thermal noise, and fidelity prefilter 13 enters superconducting state simultaneously.After amplifying through little distortion of front-end processing circuit, signal send back level signal processing 18 to handle.
Receiver front end is the hardware corridor of radio communication, and the signal of all transmission must be handled by radio-frequency front-end, and it amplifies the faint microwave signal in the special frequency channel, handles for late-class circuit.Because the radio-frequency front-end that concerns of high frequency extremely remains the simulation standard at present, a maximum difficult point of analog circuit is the deterioration of noise to signal.Because the signal amplitude that is exaggerated is small, so need to reduce amplifying circuit because the distortion of the non-linear introducing of thermal noise that the vibration of the molecular heat of electric device is introduced and device, the noise that how to reduce radio-frequency front-end becomes important research field of radio circuit engineering.The important indicator of weighing radio-frequency front-end or amplifying circuit has the noise factor (being defined as the ratio of output signal-to-noise ratio and input signal-to-noise ratio) of circuit, processing gain, input and output voltage standing-wave ratio, the linearity.Noise is a kind of time domain statistical indicator, and noise factor is actually and is used for measuring the index of circuit additive noise in the ratio of overall noise, and noise factor generally is a relative value dB scale, and good amplifying circuit needs extremely low noise factor.For realizing not having the amplification of making an uproar, must reduce the useless composition that is mingled in the signal as far as possible.Because resistance is introduced thermal noise, all inductance capacitor elements always have certain loss, element too much in the circuit certainly will be introduced various independent noise source, so be that the circuit of design object and conventional circuit difference are also will to consider that statistical property with ideal element calculates the quality factor Q value into actual components with the noise.
Conventional Design of Low Noise adopts two kinds of forms in that the mobile communication frequency range is general: microstrip-type circuit and based on CMOS technology microwave monolithic integrated circuit, but these two kinds of methods all can not reach optimal performance.Even adopt dielectric constant to have only the substrate microstrip circuit of 0.5mm up to 10 thickness, wavelength is generally 140mm on the radio-frequency region sheet, and the length of such one 1/4 wavelength shifter is 35mm, causes the area of noise circuit to surpass the scope of using; Then micro-strip pattern realizes the MMIC circuit on the sheet with very low Q value because its input coupling can only adopt, and make the total noise of centrifuge performance become the cost of volume-diminished, electric index can not satisfy the requirement of high performance communication receiver.The another one shortcoming of conventional design amplifying circuit has been to use integrated circuit, because other stray inductance, electric capacity and electricresistance effect have been introduced in the encapsulation of integrated circuit, makes the circuit of this method design additionally increase noise.
The integrated circuit that all concentrates on routine of present disclosed low noise amplifier circuit, cryogenic technique, hybrid circuit, new input coupling, new circuit stabilizing measures can not be put on the trial that reduces noise, thereby all can only under the circuit noise temperature of room temperature, improve noise factor, can not reach integrated circuit noise such as 100K.
Summary of the invention
The objective of the invention is to, proposed a kind of low temperature utmost point low-noise factor amplifying circuit, this circuit can satisfy requirements such as low noise, bigger gain, good stability simultaneously, long-term work at low temperatures simultaneously.
The present invention contains field effect transistor, be connected the input matching network between the grid of signal input part and described field effect transistor, be connected the drain electrode and the output matching network between the signal output part of described field effect transistor and be connected the negative feedback network of ground connection of the source electrode of described field effect transistor; It is characterized in that described amplifying circuit is little band hybrid circuit of microstrip line mixing discrete component, in radio-frequency region 300MHz～3GHz, wherein,
Input matching network contains:
Be connected on microwave capacitors C1, spiral inductance coil L1 on the main microstrip line of input between the grid of signal input part and field effect transistor, on the main microstrip line of input between described microwave capacitors C1 and the spiral inductance coil L1, connect the branch microstrip line of the length of a ground connection perpendicular to the main microstrip line of input less than 1/4 operation wavelength, the resistance R 1 of the resistance of on this branch's microstrip line, connecting successively less than 30 Ω, with the filter capacitor C3 and the C5 of two ground connection in parallel, introduce direct current biasing power supply Vg at the two ends of described filter capacitor C3 and C5; Described spiral inductance coil L1 is upright the placement, and the main microstrip line of input that its input is connected with output is parallel distribution; The main microstrip line of described input is a microstrip line of realizing 50 Ω impedances;
Output matching network contains:
Be connected on the drain electrode of described field effect transistor and resistance R 2 and the capacitance C6 on the main microstrip line of the output between the signal output part, on the main microstrip line of output between described resistance R 2 and the capacitor C 6, perpendicular to branch's microstrip line of a ground connection of the main microstrip line connection of output, its length is less than 1/4 operation wavelength; The resistance R 3 that the resistance of connecting successively on this branch's microstrip line is 50～200 Ω and the filter capacitor C7 and the C8 of two ground connection in parallel introduce direct current biasing power supply Vd at the two ends of this filter capacitor C7 and C8; The main microstrip line of described output is one section microstrip line of realizing 50 Ω, and the resistance of described resistance R 2 is 1/10～1/5 of resistance R 3;
Negative feedback network contains:
Be connected in two source electrodes of described field effect transistor respectively, and separately along two microstrip lines that are perception that oppositely extend ground connection perpendicular to the direction of described I/O master microstrip line, the length of described two microstrip lines is less than 1/10 operation wavelength.
Evidence, the present invention can be satisfied low noise, bigger gain, low standing-wave ratio, high linearity requirement simultaneously, and long-term work has at low temperatures reached its intended purposes.
Description of drawings
Fig. 1 is the receiver front end system block diagram;
Fig. 2 is the conventional design block diagram of receiver front end amplifying circuit;
Fig. 3 is the circuit theory diagrams of this amplifying circuit;
Fig. 4 is the circuit distribution schematic diagram of the embodiment of the invention;
Fig. 5 is the schematic diagram that the upright mode of spiral inductance coil is placed;
Fig. 6 is the graph of a relation of the present invention in CDMA frequency range noise factor and frequency;
Fig. 7 is the graph of a relation of the present invention in CDMA frequency range voltage standing wave ratio and frequency;
Fig. 8 is that the present invention gains in the graph of a relation of frequency in the CDMA band circuitry.
Embodiment:
Accompanying drawings the specific embodiment of the present invention.The present invention is applicable to radio-frequency region (300MHz-3GHz).
As shown in Figure 2, the present invention as amplifying device, is an input matching network with field effect transistor HEMT between the grid of field effect transistor and signal input part, is output matching network between drain electrode and the signal output part, and what source electrode connected is the negative feedback network of ground connection.
As shown in Figure 3, input matching network is a T type impedance network.Input matching network can be divided into AC portion, comprising: microstrip line S1, microwave capacitors C1, spiral inductance coil L1 resistance R 1 and microstrip line S3; And the direct current biasing part, comprising: the microstrip line S4 of filter capacitor C3, C5 and introducing direct current biasing power supply.AC portion only relates to 3 discrete component C1, L1, R1, can reduce thermal noise source like this.Wherein S1 is the main microstrip line of input of realizing 50 Ω impedances.C1 is just to realizing the stopping direct current effect, owing to be on the input main line, the quality factor of C1 is very important, must select high-Q microwave electric capacity for use, and in general the Q value is greater than 100, the better performances of realization.Phase matched is mainly realized by the helical coil inductance L 1 of high quality factor, L1 is upright (see figure 5) of placing, to reduce to import the length of main microstrip line, thereby reduce circuit size, its number of turns can be below 5 circles, the main microstrip line of input that the L1 input and output side is connected is parallel distribution, to reduce the phenomenon that inductance leakage field and electric field cause the transistor parasitic coupled oscillations.Resistance R 1 is the small resistor that is connected on branch's microstrip line, its access point is near breakout, its resistance is less than 30 Ω, 1 pair of The noise of resistance R can be ignored, but it is the key element that suppresses the outer vibration of circuit band, because the stabilizing circuit mode that not obvious the present invention of Distribution Effect of radio frequency operation frequency range discrete resistors has courageously adopted this traditional microwave circuit not adopt.The end of branch's microstrip line exchanges ground connection by filtering decoupling capacitor C3, the C5 of two filtering different frequency ranges, and C3 and C5 are respectively 100pf and 1000pf magnitude, introduces direct current biasing power supply Vg at filter capacitor C3, C5 two ends with microstrip line S4.The length of the microstrip line S3 of branch is different with traditional circuit, adopts the microstrip line less than 1/4 operation wavelength, can dwindle the area that direct current biasing takies like this.In this input matching circuit, the parallel distribution of the main microstrip line of input that the input of spiral inductance coil L1 is connected with output, be because the mobile communication radio-frequency transmitter is insensitive to this distribution form, can reduce inductance leakage field and electric field like this and cause transistor parasitic coupled oscillations phenomenon.
See negative feedback network,, therefore adopt two sections microstrip line S5 and S6 parallel connection, microstrip line to be perception because field effect transistor has two source lead.
Output matching network also adopts T type network to realize.The drain electrode of field effect transistor connects the resistance R 2 that improves stability coefficient, and then connects one section branch's microstrip line and introduces direct current biasing.The resistance R 3 of vibration and the filtering decoupling capacitor C7 and the C8 of two ground connection in parallel outside the inhibition zone of on branch's microstrip line, connecting successively, C7 and C8 are respectively 100pf and 1000pf magnitude, introduce direct current biasing power supply Vd at the two ends of C7 and C8 with the microstrip line S9 of high microwave impedance.Resistance R 3 is used for inhibition zone vibrates outward, because output loop is very little to the noise factor influence, therefore can adopt 50 ~ 200 Ω resistance decrement out of band signals.The resistance of resistance R 2 is 1/10 ~ 1/5 of a resistance R 3.Branch road microstrip line S8 realizes the imaginary part coupling, and its length is less than 1/4 operation wavelength.S10 is the main microstrip line of output of realizing 50 ohmage conversion, and capacitor C 6 is used for connecting the next stage load every direct join.
As shown in Figure 4, be the circuit distribution schematic diagram of the present invention in cdma mobile communication 825-835MHz frequency range.In input matching network, the microwave sub-miniature A connector connects information source to 50 ohmage microstrip lines 41 (S1), signal is through stopping direct current 36pf special microwave capacitor C 1, and then connect branch's microstrip line 43 (S3), connect spiral inductance coil L1 then, the installation of L1 can be got a 3mm through hole on ceramic substrate, L1 is uprightly put into through hole perpendicular to substrate, can reduce the loss with substrate coupling, also can reduce input coupling microstrip line length simultaneously; The main microstrip line of the input at L1 two ends is at a distance of the parallel distribution of 3mm.The 46th, a leg of the output of spiral inductance coil L1 and the grid of field effect transistor, see from the grid of field effect transistor toward signal source into impedance should with the optimum noise match point conjugation of field effect transistor.Transistorized optimum noise input impedance is carried out phse conversion through spiral inductance L1 and leg 46, and the parallel branch microstrip line is realized the imaginary impedance coupling then.Branch's microstrip line 43 (S3) length overall that connects on the input main line is 30mm, 22 Ohmic resistance R1 of vibration outside the approaching inhibition zone of connecting with the place of main line node of microstrip line, branch's microstrip line is at middle bent 90 degree and extend to end two ground connection filter capacitor C3 (200pf) in parallel and C5 (2000pf), and direct current biasing power supply Vg is introduced by the microstrip line 414 (S4) of high microwave impedance in two filter capacitor two ends.In input matching network, microwave partiting dc capacitor C1 adopts special-purpose high Q electric capacity, inductance L 1 adopts Ag coating to improve quality factor q, its line footpath size, the radius of spin and the number of turns can and obtain through Model Calculation emulation and the selection of resonance point measurement, as adopt 3 to enclose, diameter is 3mm, and these measures can reduce the loss of circuit.The source negative feedback network is two perceptual microstrip lines 47 (S5) and 48 (S6), and the negative feedback line length generally is not more than 1/4 operation wavelength, often below 1/10 operation wavelength, can ignore to guarantee parasitic parameter in the reality.Two sections microstrip lines should be perpendicular to main microstrip line, and is mutually in the other direction and extends, then ground connection.Its wide 1.2mm that is, length is 7.8mm, and microstrip line 47 links to each other with ground by 3 diameter 0.8mm via holes, and microstrip line 48 crimping ground connection can be dwindled circuit size.In the output matching network, amplifying signal improves stability coefficient from the drain electrode output of field effect transistor through resistance R 2, and the resistance of resistance R 2 is 1/8 of R3.And then connect branch's microstrip line 411 (S8), the resistance R 3 of vibration branch's microstrip line 411 is connected an inhibition zone with the place of main line node near branch line outside, its resistance is 100 ohm; The width 0.3mm of branch's microstrip line, length 9mm, terminal by C7 (200pf) and C8 (2000pf) electric capacity process through hole ground connection, introduce direct current biasing power supply Vd at the filter capacitor two ends with the microstrip line 413 (S9) of high microwave impedance.Realize connecting the next stage load behind 36pf capacitance C6 of microstrip line 412 (S10) series connection of 50 Ω impedances.In order not influence the passive microwave circuit and to insulate with microwave environment, entire circuit of the present invention is encapsulated in the can identical with the circuit substrate area, this can ground connection, in order to make the substrate good earth, because variation of ambient temperature reaches 200K, indium metal and the can back welding close with substrate by thermal coefficient of expansion are connected together, to guarantee that circuit does not come off under the low temperature.
In sum, the present invention reaches low noise, bigger gain, good stability, the requirement of long-term work at low temperatures by following characteristics:
1, low noise: be mainly derived from fan-in network, adopt the spiral inductance coil L1 of high Q value, high Q value microwave capacitors C1 reduces the loss of input circuit, thereby reduces noise.
2, stability: the two parallel microstrip line constructions of the input at L1 two ends reduce parasitic parameter; R1, R2, R3 are small resistor, improve input and output matching network value of real part of impedance; Degenerative length reduces parasitic oscillation less than 1/10 operation wavelength;
3, the cooperation of the resistance size of bigger gain: R2, R3 makes gain bigger;
4, long-term work at low temperatures: little band mixed structure, reduce circuit size, make it be suitable for the low-temperature superconducting environment.
The present invention is being carried out every performance test, obtaining structure shown in Fig. 6,7,8, visible the present invention's its noise factor 51 in the CDMA frequency range is lower than 0.38dB, and its input reflection coefficient 61 is less than-16.5dB, and its ratio of gains 71 is greater than 17.2dB.Size of the present invention only is 22mm*35m, and power consumption is 20mW.This shows, the present invention adopts the mode of little band mixing discrete component, make the amplifying circuit of radio-frequency receiver front-end possess requirements such as low noise, bigger gain, good stability, size be little simultaneously, long-term work at low temperatures can reach good effect when being applied to receiver front end.
Claims (1)
1, low temperature utmost point low-noise factor amplifying circuit, contain field effect transistor, be connected the input matching network between the grid of signal input part and described field effect transistor, be connected the drain electrode and the output matching network between the signal output part of described field effect transistor and be connected the negative feedback network of ground connection of the source electrode of described field effect transistor; It is characterized in that described amplifying circuit is little band hybrid circuit of microstrip line mixing discrete component, in radio-frequency region 300MHz～3GHz, wherein, input matching network contains:
Be connected on microwave capacitors C1, spiral inductance coil L1 on the main microstrip line of input between the grid of signal input part and field effect transistor, on the main microstrip line of input between described microwave capacitors C1 and the spiral inductance coil L1, connect the branch microstrip line of the length of a ground connection perpendicular to the main microstrip line of input less than 1/4 operation wavelength, the resistance R 1 of the resistance of on this branch's microstrip line, connecting successively less than 30 Ω, with the filter capacitor C3 and the C5 of two ground connection in parallel, introduce direct current biasing power supply Vg at the two ends of described filter capacitor C3 and C5; Described spiral inductance coil L1 is upright the placement, and the main microstrip line of input that its input is connected with output is parallel distribution; The main microstrip line of described input is a microstrip line of realizing 50 Ω impedances; Output matching network contains:
Be connected on the drain electrode of described field effect transistor and resistance R 2 and the capacitance C6 on the main microstrip line of the output between the signal output part, on the main microstrip line of output between described resistance R 2 and the capacitor C 6, perpendicular to branch's microstrip line of a ground connection of the main microstrip line connection of output, its length is less than 1/4 operation wavelength; The resistance R 3 that the resistance of connecting successively on this branch's microstrip line is 50～200 Ω and the filter capacitor C7 and the C8 of two ground connection in parallel introduce direct current biasing power supply Vd at the two ends of this filter capacitor C7 and C8; The main microstrip line of described output is one section microstrip line of realizing 50 Ω, and the resistance of described resistance R 2 is 1/10～1/5 of resistance R 3;
Negative feedback network contains:
Be connected in two source electrodes of described field effect transistor respectively, and separately along two microstrip lines that are perception that oppositely extend ground connection perpendicular to the direction of described I/O master microstrip line, the length of described two microstrip lines is less than 1/10 operation wavelength.
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| CN101662263B (en) * | 2008-08-27 | 2012-11-21 | 中国科学院微电子研究所 | Bias circuit used in Ku waveband internally-matched field effect transistor |
| CN101506810B (en) * | 2005-10-24 | 2013-06-05 | 卡德思设计规划公司 | Timing, noise, and power analysis of integrated circuits |
| CN102118133B (en) * | 2009-12-31 | 2013-08-28 | 中国科学院微电子研究所 | Matching circuit with stable network suitable for high-frequency high-power device |
| CN103457549A (en) * | 2013-09-12 | 2013-12-18 | 电子科技大学 | Tri-band radio frequency power amplifier and impedance matching method of matching network of tri-band radio frequency power amplifier |
| CN104467691A (en) * | 2014-12-04 | 2015-03-25 | 中国科学技术大学 | Low-temperature broadband low-noise amplifier |
| CN104883138A (en) * | 2015-06-23 | 2015-09-02 | 中国科学技术大学 | Broadband low-noise amplifier double used in indoor temperature and extremely low temperature |
| CN107070439A (en) * | 2015-11-02 | 2017-08-18 | 三菱电机株式会社 | Semiconductor device |
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| JPH06267038A (en) * | 1993-03-16 | 1994-09-22 | Hitachi Metals Ltd | Gap depth measuring apparatus for magnetic head |
| JP3060981B2 (en) * | 1997-02-21 | 2000-07-10 | 日本電気株式会社 | Microwave amplifier |
| JP2003142965A (en) * | 2001-11-01 | 2003-05-16 | Mitsubishi Electric Corp | Variable gain amplifier |
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| CN101506810B (en) * | 2005-10-24 | 2013-06-05 | 卡德思设计规划公司 | Timing, noise, and power analysis of integrated circuits |
| CN101421916B (en) * | 2006-04-14 | 2011-11-09 | Nxp股份有限公司 | Doherty amplifier |
| CN101662263B (en) * | 2008-08-27 | 2012-11-21 | 中国科学院微电子研究所 | Bias circuit used in Ku waveband internally-matched field effect transistor |
| CN102118133B (en) * | 2009-12-31 | 2013-08-28 | 中国科学院微电子研究所 | Matching circuit with stable network suitable for high-frequency high-power device |
| CN103457549A (en) * | 2013-09-12 | 2013-12-18 | 电子科技大学 | Tri-band radio frequency power amplifier and impedance matching method of matching network of tri-band radio frequency power amplifier |
| CN104467691B (en) * | 2014-12-04 | 2017-07-28 | 中国科学技术大学 | A kind of low temperature broadband low-noise amplifier |
| CN104467691A (en) * | 2014-12-04 | 2015-03-25 | 中国科学技术大学 | Low-temperature broadband low-noise amplifier |
| CN104883138A (en) * | 2015-06-23 | 2015-09-02 | 中国科学技术大学 | Broadband low-noise amplifier double used in indoor temperature and extremely low temperature |
| CN104883138B (en) * | 2015-06-23 | 2018-01-30 | 中国科学技术大学 | The dual-purpose broadband low-noise amplifier of a kind of room temperature, extremely low temperature |
| CN107070439A (en) * | 2015-11-02 | 2017-08-18 | 三菱电机株式会社 | Semiconductor device |
| CN107070439B (en) * | 2015-11-02 | 2021-01-01 | 三菱电机株式会社 | Semiconductor device with a plurality of semiconductor chips |
| CN109274368A (en) * | 2018-11-14 | 2019-01-25 | 电子科技大学 | A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator |
| CN110098808A (en) * | 2019-03-26 | 2019-08-06 | 深圳市普威技术有限公司 | A kind of broadband LNA circuit and device |
| CN110098808B (en) * | 2019-03-26 | 2023-07-25 | 深圳市联洲国际技术有限公司 | Broadband LNA circuit and device |
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