CN110098808A - A kind of broadband LNA circuit and device - Google Patents
A kind of broadband LNA circuit and device Download PDFInfo
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- CN110098808A CN110098808A CN201910240275.5A CN201910240275A CN110098808A CN 110098808 A CN110098808 A CN 110098808A CN 201910240275 A CN201910240275 A CN 201910240275A CN 110098808 A CN110098808 A CN 110098808A
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03G—CONTROL OF AMPLIFICATION
- H03G3/00—Gain control in amplifiers or frequency changers
- H03G3/20—Automatic control
- H03G3/30—Automatic control in amplifiers having semiconductor devices
- H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Microwave Amplifiers (AREA)
Abstract
The invention discloses a kind of broadband LNA circuit and devices, and in circuit, first end, the second end of voltage bias module are connect with the first end of amplifier tube, second end respectively；First sub- microstrip line is connected between signal input port and the first end of the second sub- microstrip line, first microstrip line is connected between the second end of the second sub- microstrip line and the first end of amplifier tube, and the first sub- microstrip line and the second sub- microstrip line laid out in parallel are to form the first coupled microstrip line；First end, the second end of second microstrip line are connect with the first end of the second end of amplifier tube, the sub- microstrip line of third respectively, 4th sub- microstrip line is connected between the second end and signal output port of the sub- microstrip line of third, to form the second coupled microstrip line, the first end of third microstrip line is connect with the second end of the second microstrip line for the sub- microstrip line of third and the 4th sub- microstrip line laid out in parallel.The present invention can make LNA circuit keep the working performance of low noise, high-gain on wider working band.
Description
Technical field
The present invention relates to electronic technology field more particularly to a kind of broadband LNA circuits and device.
Background technique
LNA circuit (Low Noise Amplifier, low noise amplifier circuit) is in microwave system or radio-frequency receiving system
In in front position, noise coefficient and gain coefficient to receive overall performance have a great impact, the design of LNA circuit is outstanding
It is important.
In the prior art, frequently with the matching network in various discrete components building LNA circuit, most LNA circuit
All the performance of low noise, high-gain can only be kept to work on fixed single frequency point or multiple frequency points.But LNA is electric
The triode or metal-oxide-semiconductor that road uses have nonlinear characteristic, when working frequency points change, the input impedance of LNA circuit
Can correspondingly change, corresponding matching network mismatch will lead to using the LNA circuit of the prior art, prevent LNA circuit from after
The working performance of low noise, high-gain is held in continuation of insurance.
Summary of the invention
The technical problem to be solved by the embodiment of the invention is that providing a kind of broadband LNA circuit and device, can be realized
LNA circuit keeps the working performance of low noise, high-gain on wider working band.
In a first aspect, the circuit includes amplifier tube, first the embodiment of the invention provides a kind of broadband LNA circuit
Distribution network, the second matching network and voltage bias module；First matching network includes the first sub- microstrip line, the second sub- micro-strip
Line and the first microstrip line, second matching network include the sub- microstrip line of third, the 4th sub- microstrip line, the second microstrip line and third
Microstrip line；Wherein,
The first end of the voltage bias module is connect with the first end of the amplifier tube, and the of the voltage bias module
Two ends are connect with the second end of the amplifier tube；The third end of the voltage bias module is grounded；The third end of the amplifier tube
Ground connection；
The first end of the first sub- microstrip line is used for connection signal input port, the second end of the first sub- microstrip line
It is connect with the first end of the described second sub- microstrip line, the second end of the second sub- microstrip line and the first of first microstrip line
End connection, the second end of first microstrip line are connect with the first end of the amplifier tube；Wherein, the described first sub- microstrip line with
The second sub- microstrip line laid out in parallel is to form the first coupled microstrip line；
The first end of second microstrip line is connect with the second end of the amplifier tube, the second end of second microstrip line
It is connect with the first end of the sub- microstrip line of the third, the of the second end of the sub- microstrip line of third and the 4th sub- microstrip line
The second end of one end connection, the 4th sub- microstrip line is used for connection signal output port；The first end of the third microstrip line
It is connect with the second end of second microstrip line, the second end ground connection of the third microstrip line；Wherein, the sub- microstrip line of the third
With the described 4th sub- microstrip line laid out in parallel to form the second coupled microstrip line.
Further, the voltage bias module include DC power supply, first capacitor, the 4th microstrip line, the 5th microstrip line,
First resistor, second resistance and the 6th microstrip line；
The anode of the DC power supply is connect with the first end of the 4th microstrip line, the second end of the 4th microstrip line
It is connect with the first end of the 5th microstrip line, the second end of the 5th microstrip line and the first end of the first resistor connect
Connect, the second end of the first resistor is connect with the first end of the second resistance, the second end of the second resistance with it is described
The first end of 6th microstrip line connects, and the first end of the first capacitor is connect with the anode of the DC power supply；
The second end of the first resistor is the first end of the voltage bias module, the second end of the 4th microstrip line
For the second end of the voltage bias module；The cathode of the DC power supply is the third end of the voltage bias module, and with
The second end of 6th microstrip line, the connection of the second end of the first capacitor.
Further, the circuit further includes the first radio frequency choke module and the second radio frequency choke module；
The first end of the first radio frequency choke module is connect with the first end of the voltage bias module, and described first penetrates
The second end of frequency chokes module is connect with the first end of the amplifier tube；
The first end of the second radio frequency choke module is connect with the second end of the voltage bias module, and described second penetrates
The second end of frequency chokes module is connect with the second end of the amplifier tube.
Further, the first radio frequency choke module includes the 7th microstrip line and the first inductance；
The first end of 7th microstrip line is the first end of the first radio frequency choke module, the 7th microstrip line
Second end is connect with the first end of first inductance, and the second end of first inductance is the first radio frequency choke module
Second end.
Further, the second radio frequency choke module includes 3rd resistor, the 8th microstrip line and the second inductance；
The first end of the 3rd resistor be the second radio frequency choke module first end, the second of the 3rd resistor
End is connect with the first end of the 8th microstrip line, and the second end of the 8th microstrip line and the first end of second inductance connect
It connects, the second end of second inductance is the second end of the second radio frequency choke module.
Further, the circuit further includes the 9th microstrip line, the first end of the 9th microstrip line and the amplifier tube
Third end connection, the 9th microstrip line second end ground connection.
Further, the circuit further includes that the tenth microstrip line, the 11st microstrip line, the 12nd microstrip line and the 13rd are micro-
Band line；
The first end of tenth microstrip line is for connecting the signal input port, the second end of the tenth microstrip line
It is connect with the first end of the described first sub- microstrip line；
The first end of 11st microstrip line is connect with the second end of first microstrip line, the 11st microstrip line
Second end connect with the first end of the amplifier tube；
The first end of 12nd microstrip line is connect with the second end of the amplifier tube, and the of the 12nd microstrip line
Two ends are connect with the first end of second microstrip line；
The first end of 13rd microstrip line is connect with the second end of the 4th sub- microstrip line, the 13rd micro-strip
The second end of line is used for connection signal output port.
Further, the circuit further includes the second capacitor and third capacitor；
The first end of second capacitor is connect with the second end of the tenth microstrip line, the second end of second capacitor
It is connect with the first end of the described first sub- microstrip line；
The first end of the third capacitor is connect with the second end of the 12nd microstrip line, and the second of the third capacitor
End is connect with the first end of second microstrip line.
Further, the amplifier tube includes N-channel MOS pipe, and the grid of the N-channel MOS pipe is the amplifier tube
First end, the drain electrode of the N-channel MOS pipe are the second end of the amplifier tube, and the source electrode of the N-channel MOS pipe is described puts
The third end of big pipe；Or,
The amplifier tube includes NPN type triode, and the base stage of the NPN type triode is the first end of the amplifier tube,
The second end of the extremely described amplifier tube of the current collection of the NPN type triode, the extremely described amplification of the transmitting of the NPN type triode
The third end of pipe.
Second aspect, the embodiment of the invention also provides a kind of broadband LNA device, described device includes such as above-mentioned first party
Any one broadband LNA circuit, medium substrate and the metal floor that face provides；
The broadband LNA circuit is attached to the first surface of the medium substrate, and the metal floor, which is attached to, to be given an account of
The second surface of matter substrate.
The broadband LNA circuit and device of above-mentioned offer construct matching network by microstrip line, and matching network is in wider frequency
Impedance matching is kept in band, realizes that LNA circuit keeps the working performance of low noise, high-gain on wider working band.
Detailed description of the invention
Fig. 1 is a kind of structural schematic diagram of a preferred embodiment of broadband LNA circuit provided in an embodiment of the present invention；
Fig. 2 is the working principle of the second matching network in LNA circuit in broadband shown in FIG. 1 with reference to figure；
Fig. 3 is a kind of structural schematic diagram of another preferred embodiment of broadband LNA circuit provided in an embodiment of the present invention；
Fig. 4 is a kind of structural schematic diagram of a preferred embodiment of broadband LNA device provided in an embodiment of the present invention；
Fig. 5 is the emulation testing figure of the S11 parameter of broadband LNA circuit；
Fig. 6 is the emulation testing figure of the S22 parameter of broadband LNA circuit；
Fig. 7 is the emulation testing figure of the S21 parameter of broadband LNA circuit；
Fig. 8 is the emulation testing figure of the noise of broadband LNA circuit；
Fig. 9 is the emulation testing figure of the coefficient of stability of broadband LNA circuit.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
The embodiment of the invention provides a kind of broadband LNA circuits, referring to Fig. 1, being one kind provided in an embodiment of the present invention
The structural schematic diagram of one preferred embodiment of broadband LNA circuit；The circuit includes amplifier tube 1, the first matching network 2,
Two matching networks 3 and voltage bias module 4；First matching network 2 includes the first sub- microstrip line A1, the second sub- microstrip line A2
With the first microstrip line M1, second matching network 3 includes the sub- microstrip line A3 of third, the 4th sub- microstrip line A4, the second microstrip line
M2 and third microstrip line M3；Wherein,
The first end of the voltage bias module 4 is connect with the first end of the amplifier tube 1, the voltage bias module 4
Second end connect with the second end of the amplifier tube 1；The third end of the voltage bias module 4 is grounded；The amplifier tube 1
Third end ground connection；
The first end of the first sub- microstrip line A1 is used for connection signal input port 5, the first sub- microstrip line A1's
Second end is connect with the first end of the described second sub- microstrip line A2, the second end of the second sub- microstrip line A2 and described first micro-
First end connection with line M1, the second end of the first microstrip line M1 are connect with the first end of the amplifier tube 1；Wherein, institute
The first sub- microstrip line A1 and the described second sub- microstrip line A2 laid out in parallel are stated to form the first coupled microstrip line；
The first end of the second microstrip line M2 is connect with the second end of the amplifier tube 1, the second microstrip line M2's
Second end is connect with the first end of the sub- microstrip line A3 of the third, the second end of the sub- microstrip line A3 of third and the 4th son
The first end of microstrip line A4 connects, and the second end of the 4th sub- microstrip line A4 is used for connection signal output port 6；The third
The first end of microstrip line M3 is connect with the second end of the second microstrip line M2, the second end ground connection of the third microstrip line M3；
Wherein, the sub- microstrip line A3 of the third and the described 4th sub- microstrip line A4 laid out in parallel are to form the second coupled microstrip line.
Wherein, the first sub- microstrip line and the second sub- microstrip line laid out in parallel refer to the first sub- microstrip line and the second sub- microstrip line
It is connected, is parallel to each other and close to each other by way of single-ended short circuit, so that the first sub- microstrip line and the second sub- microstrip line are passed
Defeated electric field intercouples, and forms the first coupled microstrip line by the first sub- microstrip line and the second sub- microstrip line；Similarly third is micro-
With the 4th sub- microstrip line it is also to be connect by way of single-ended short circuit with line, is parallel to each other and close to each other, so that third is micro-
The electric field transmitted with line and the 4th sub- microstrip line intercouples, and forms the second coupling by the sub- microstrip line of third and the 4th sub- microstrip line
Close microstrip line.
In LNA circuit provided in an embodiment of the present invention, for the first matching network, the first matching network includes that the first son is micro-
Band line, the second sub- microstrip line and the first microstrip line, may be implemented to convert the input impedance of LNA in work by the first microstrip line
Make that real part on frequency band is equal, and the input impedance imaginary part of the first matching network is inherently close to 0, the input of broadband LNA circuit
True impedance is only left in the input impedance of impedance at the operating frequencies；Pass through the first sub- microstrip line and the second sub- microstrip line composition first
True impedance is matched to source impedance on wider working band by coupled microstrip line.For the second matching network, the second pair net
Network includes the sub- microstrip line of third, the 4th sub- microstrip line, the second microstrip line and third microstrip line, be may be implemented by the second microstrip line
The central symmetry that the real part on working band is equal, imaginary part is about working band is converted by the input impedance of LNA；Third micro-strip
Line is the microstrip line of single-ended short circuit connection, by the generation of third microstrip line and the symmetrical impedance of LNA input impedance imaginary part, to offset
Fall the imaginary part of the impedance, so far, true impedance is only left in the input impedance of the input impedance of broadband LNA circuit at the operating frequencies；
By forming the second coupled microstrip line by the sub- microstrip line of third and the 4th sub- microstrip line, by true impedance on wider working band
It is matched to source impedance.The matching that LNA circuit is realized by the first matching network and the second matching network, so that radiofrequency signal to the greatest extent may be used
It is transmitted to output port to energy.
Specifically, LNA circuit in broadband provided in an embodiment of the present invention, radiofrequency signal enters from signal input port 5, through the
One matching network enters amplifier tube, and during which, voltage bias module adjusts the voltage of the first end and second end of amplifier tube, makes to amplify
Pipe work is in amplification region, and the amplitude of radiofrequency signal rises, noise coefficient improves, then flows into the second matching network and signal output end
Mouth output.
It should be noted that amplifier tube can be metal-oxide-semiconductor, triode or multiple tube etc..
LNA circuit in broadband provided by the invention constructs the first matching network and the second matching network by microstrip line, passes through
First matching network and the second matching network keep impedance matching in wider working band, and matching degree is good, so that radio frequency
Signal is transmitted to signal output port from signal input port substantially, realizes that LNA circuit keeps low on wider working band
The working performance of noise, high-gain.
Since the design principle of the first matching network and the second matching network is identical, and the input impedance of the first matching network
Imaginary part inherently close to 0, in order to make it easy to understand, illustrating provided in an embodiment of the present invention below by taking the second matching network as an example
The design theory of broadband LNA circuit:
Assuming that the upper limiting frequency of the working band of broadband LNA circuit is f1It is f with lower frequency limit2, f2> f1, frequency ratio k=
f2/f1；Referring to Fig. 2, being the working principle of the second matching network in LNA circuit in broadband shown in FIG. 1 with reference to figure；
It should be noted that Zid=Rd1+jXd1It is broadband LNA circuit in upper limiting frequency f1The second matching is not added when work
Input impedance when network, Zid=Rd2+jXd2It is broadband LNA circuit in lower frequency limit f2The second matching network is not added when work
When input impedance.
(1) for the characteristic impedance Z of the second microstrip line1, electrical length θ1Design:
The input impedance of broadband LNA circuit is in upper limiting frequency f1Expression formula are as follows:
The input impedance of broadband LNA circuit is in lower frequency limit f2Expression formula are as follows:
Second microstrip line is in upper limiting frequency f1Electrical length θ (f when work1) and in lower frequency limit f2θ (f when work2) need
Meet following relationship:
θ(f2)=k θ (f1)=k θ1 (3)
Above-mentioned expression formula (3) is substituted into expression formula (1) and expression formula (2) respectively, it is available
Due to the input impedance conjugation in upper limiting frequency and lower frequency limit, have
Zin1(f1)=[Zin2(f2)]* (6)
Combinatorial formula (4), (5) and (6), can obtain:
Wherein, n value n=1,2,3 ....
(2) for the characteristic impedance Z of third microstrip line2, electrical length θ2Design:
The expression formula of the admittance of third microstrip line are as follows:
LNA circuit input admittance after being connected with the second microstrip line indicates are as follows:
Yin1(f1)=G-jB (10)
Yin1(f2)=G+jB (11)
Wherein,
In order to enable third microstrip line to offset the imaginary part of impedance, it is necessary to so that admittance of the third microstrip line in working band
It is zero in center frequency point, and in upper limiting frequency f1And lower frequency limit f2With input impedance Zin1Admittance imaginary part on the contrary, i.e. need to meet
Following formula:
It can be obtained by formula (16) and formula (17):
(3) for the odd modular character impedance for the second coupled microstrip line being made of the sub- microstrip line of third and the 4th sub- microstrip line
Zce, even modular character impedance ZcoWith electrical length θ3Design:
The abcd matrix for the second coupled microstrip line being made of the sub- microstrip line of third and the 4th sub- microstrip line is as follows:
Due to needing the true impedance R by the second coupled microstrip line by wider working bandin4It is matched to source impedance R0
On, then, and source impedance R0(true impedance Rin4) and LNA circuit imaginary part offset after input impedance Zin3(that is: Rin3) relationship are as follows:
That is, in working band f1On have:
In working band f2On have:
By formula (22) and formula (23), be made of the sub- microstrip line of third and the 4th sub- microstrip line can be calculated
The characteristic impedance of two coupled microstrip lines are as follows:
Wherein, RinRefer to the R in above-mentioned formula (22)0, RsRefer to Rin3。
It can be in the hope of the electrical length of coupled microstrip line by formula (21)-(25) are as follows:
(1+k)θ3=n π (26)
It is available that formula (27) is substituted into (24)-(27) respectively
Wherein,
So far, the design of the second matching network is completed, and the design principle of the first matching network is similar, no longer superfluous herein
It states.Illustrated by above-mentioned design principle it is found that the electrical length of the first microstrip line M1 and the second microstrip line M2 be centre frequency π/
(1+k)；The electrical length of third microstrip line M3 is π/(1+k) of center frequency；By the first sub- microstrip line and the second sub- microstrip line group
At the first coupled microstrip line and the second coupled microstrip line for being made of the sub- microstrip line of third and the 4th sub- microstrip line it is equivalent
Electrical length is π/(1+k) of centre frequency, and wherein k is f2/f1。
Further, referring to Fig. 3, being a kind of another preferred reality of broadband LNA circuit provided in an embodiment of the present invention
Apply the structural schematic diagram of example；The voltage bias module 4 includes DC power supply DC, first capacitor C1, the 4th microstrip line M4, the 5th
Microstrip line M5, first resistor R1, second resistance R2 and the 6th microstrip line M6；
The anode of the DC power supply DC is connect with the first end of the 4th microstrip line M4, the 4th microstrip line M4's
Second end is connect with the first end of the 5th microstrip line M5, the second end of the 5th microstrip line M5 and the first resistor R1
First end connection, the second end of the first resistor R1 connect with the first end of the second resistance R2, the second resistance
The second end of R2 is connect with the first end of the 6th microstrip line M6, the first end of the first capacitor C1 and the DC power supply
The anode connection of DC；
The second end of the first resistor R1 is the first end of the voltage bias module 4, the 4th microstrip line M4's
Second end is the second end of the voltage bias module 4；The cathode of the DC power supply DC is the of the voltage bias module 4
Three ends, and connect with the second end of the 6th microstrip line M6, the second end of the first capacitor C1.
LNA circuit in broadband provided by the invention, by DC power supply, first capacitor, the 4th microstrip line, the 5th microstrip line,
First resistor, second resistance and the 6th microstrip line construct voltage bias module, can provide DC current and direct current for amplifier tube
Voltage makes amplifier tube work in a suitable and stable quiescent point.
Further, the circuit further includes the first radio frequency choke module 7 and the second radio frequency choke module 8；
The first end of the first radio frequency choke module 7 is connect with the first end of the voltage bias module 4, and described first
The second end of radio frequency choke module 7 is connect with the first end of the amplifier tube 4；
The first end of the second radio frequency choke module 8 is connect with the second end of the voltage bias module 4, and described second
The second end of radio frequency choke module 8 is connect with the second end of the amplifier tube 4.
LNA circuit in broadband provided in an embodiment of the present invention, including the first radio frequency choke module and the second radio frequency choke module,
And first radio frequency choke module be connected between the first end of voltage bias module and the first end of amplifier tube, the second radio frequency choke
Module is connected between the second end of voltage bias module and the second end of amplifier tube, and it is inclined to be able to suppress radiofrequency signal input voltage
It sets in module, guarantees the normal operation of circuit.
Further, the first radio frequency choke module 7 includes the 7th microstrip line M7 and the first inductance L1；
The first end of the 7th microstrip line M7 is the first end of the first radio frequency choke module 7, the 7th micro-strip
The second end of line M7 is connect with the first end of the first inductance L1, and the second end of the first inductance L1 is first radio frequency
The second end of chokes module 7.
Specifically, constructing the first radio frequency choke module by the 7th microstrip line and the first inductance, the first radio frequency choke is realized
Module inhibits radiofrequency signal to flow into voltage bias module from the first end of amplifier tube.
Further, the second radio frequency choke module 8 includes 3rd resistor R3, the 8th microstrip line M8 and the second inductance
L2；
The first end of the 3rd resistor R3 is the first end of the second radio frequency choke module 8, the 3rd resistor R3
Second end connect with the first end of the 8th microstrip line M8, the second end of the 8th microstrip line M8 and second inductance
The first end of L2 connects, and the second end of the second inductance L2 is the second end of the second radio frequency choke module 8.
Specifically, constructing the second radio frequency choke module by 3rd resistor, the 8th microstrip line and the second inductance, second is realized
Radio frequency choke module inhibits radiofrequency signal to flow into voltage bias module from the second end of amplifier tube.
Further, the circuit further includes the 9th microstrip line M9, and the first end of the 9th microstrip line M9 is put with described
The third end connection of big pipe 1, the second end ground connection of the 9th microstrip line M9.
Specifically, LNA circuit in broadband provided in an embodiment of the present invention further includes the 9th microstrip line, the third end of amplifier tube is logical
The 9th microstrip line ground connection is crossed, the stability of broadband LNA is improved.
Further, the circuit further includes the tenth microstrip line M10, the 11st microstrip line M11, the 12nd microstrip line M12
With the 13rd microstrip line M13；
The first end of the tenth microstrip line M10 is for connecting the signal input port 5, the tenth microstrip line M10
Second end connect with the first end of the described first sub- microstrip line A1；
The first end of the 11st microstrip line M11 is connect with the second end of the first microstrip line M1, and the described 11st
The second end of microstrip line M11 is connect with the first end of the amplifier tube 1；
The first end of the 12nd microstrip line M12 is connect with the second end of the amplifier tube 1, the 12nd microstrip line
The second end of M12 is connect with the first end of the second microstrip line M2；
The first end of the 13rd microstrip line M13 is connect with the second end of the described 4th sub- microstrip line A4, and the described tenth
The second end of three microstrip line M13 is used for connection signal output port 6.
Specifically, LNA circuit in broadband provided in an embodiment of the present invention further includes the tenth microstrip line, the 11st microstrip line,
12 microstrip lines and the 13rd microstrip line can more efficiently be transmitted radiofrequency signal.
Further, the circuit further includes the second capacitor C2 and third capacitor C3；
The first end of the second capacitor C2 is connect with the second end of the tenth microstrip line M10, the second capacitor C2
Second end connect with the first end of the described first sub- microstrip line A1；
The first end of the third capacitor C3 is connect with the second end of the 12nd microstrip line M12, the third capacitor
The second end of C3 is connect with the first end of the second microstrip line C2.
Specifically, LNA circuit in broadband provided in an embodiment of the present invention further includes the second capacitor and third capacitor, can be isolated
The low frequency signal of front end input and the low frequency signal of rear end input, are further ensured that the normal operation of broadband LNA circuit.
Further, the amplifier tube 1 includes N-channel MOS pipe, and the grid of the N-channel MOS pipe is the amplifier tube 1
First end, the drain electrode of the N-channel MOS pipe is the second end of the amplifier tube 1, and the source electrode of the N-channel MOS pipe is described
The third end of amplifier tube 1；Or,
The amplifier tube 1 includes NPN type triode, and the base stage of the NPN type triode is the first of the amplifier tube 1
End, the second end of the extremely described amplifier tube 1 of the current collection of the NPN type triode, the transmitting of the NPN type triode are extremely described
The third end of amplifier tube 1.
LNA circuit in broadband provided in an embodiment of the present invention, amplifier tube include N-channel MOS pipe Q1 or NPN type triode, energy
Enough radiofrequency signal is amplified using metal-oxide-semiconductor or triode.
When it is implemented, LNA circuit in broadband provided by the invention, radiofrequency signal enters from signal input port 5, through first
Matching network enters amplifier tube, and during which, voltage bias module adjusts the voltage of the first end and second end of amplifier tube, makes amplifier tube
Work is in amplification region, and the amplitude of radiofrequency signal rises, noise coefficient improves, then flows into the second matching network and signal output port
Output.
The matching network in LNA circuit compared with the prior art is constructed by discrete component, and the embodiment of the present invention provides
Broadband LNA circuit, matching network is constructed by microstrip line, matching network keeps impedance matching in wider frequency band, realizes
LNA circuit keeps the working performance of low noise, high-gain on wider working band.
It should be noted that attached drawing 3 illustrates only broadband LNA circuit when amplifier tube 1 includes N-channel MOS pipe Q1, it is based on
The characteristic of above-mentioned explanation and triode to when amplifier tube 1 includes NPN type triode, those skilled in the art can also define
Know the connection type of each component in broadband LNA circuit when amplifier tube 1 includes NPN type triode.
Second aspect, the embodiment of the invention also provides a kind of broadband LNA devices, referring to Fig. 4, being the embodiment of the present invention
A kind of structural schematic diagram of one preferred embodiment of the broadband LNA device provided；
Described device includes broadband LNA circuit 9, medium substrate 10 and gold as described in any one of above-mentioned first aspect offer
Possession plate 11；
The broadband LNA circuit 9 is attached to the first surface of the medium substrate 10, and the metal floor 11 is attached to institute
State the second surface of medium substrate 10.
A kind of broadband LNA device provided in an embodiment of the present invention constructs pair net by microstrip line in the LNA circuit of broadband
Network, matching network keep impedance matching in wider frequency band, realize that LNA device keeps low noise on wider working band
The working performance of sound, high-gain.
A kind of broadband LNA device provided in an embodiment of the present invention, the width of working principle and beneficial effect and above-mentioned offer
Band LNA circuit corresponds, therefore details are not described herein.
The beneficial effect for the broadband LNA circuit that embodiment provides in order to better illustrate the present invention, below with reference to specific
The parameter and emulation testing figure of broadband LNA circuit carry out related description:
By taking working band is 2.5GHz -3.5GHz as an example, using LNA circuit in broadband provided in an embodiment of the present invention, and will
Each parameter setting of broadband LNA circuit is as follows:
A length of 5mm, the width 1.8mm of tenth microstrip line, a length of 34.9mm of the first sub- microstrip line, width 1.3mm, second
The spacing of a length of 34.9mm of sub- microstrip line, width 0.8mm, the first sub- microstrip line and the second sub- microstrip line laid out in parallel is
1.29mm constitutes the first coupled microstrip line；A length of 2.5mm, the width 4.86mm of first microstrip line, the 11st microstrip line it is a length of
5mm, width 2mm, a length of 4mm, the width 2mm of the 4th microstrip line, a length of 2.6mm, the width 2mm of the 5th microstrip line, the 6th is micro-
A length of 3mm with line, width 2mm, a length of 2mm, the width 1.2mm of the 7th microstrip line, a length of 4.8mm, the width of the 8th microstrip line
For 1.8mm, a length of 1.85mm, the width 1mm of the 9th microstrip line, a length of 2.8mm, the width 1.1mm of the 12nd microstrip line, second
A length of 7mm, the width 1mm of microstrip line；A length of 42mm, the width 3.6mm of third microstrip line, the sub- microstrip line of third it is a length of
37mm, width 1mm, a length of 37mm, the width 0.9mm of the 4th sub- microstrip line, the sub- microstrip line of third and the 4th sub- microstrip line are arranged side by side
It is divided into 1mm between arrangement, constitutes the second coupled microstrip line；A length of 3mm, the width 2mm of 13rd microstrip line.
First resistor R1 is 60 Ω, and second resistance R2 is 300 Ω；First inductance L1 is 2.2uH, and the second inductance L2 is
1.2uH；3rd resistor R3 is 10 Ω；Second capacitor C2 is 4.7pF, and third capacitor C3 is 1pF；Amplifier tube includes N-channel MOS pipe
ATF54143；The voltage of DC power supply DC is 5V.
Medium substrate uses Rogers 4003, and with a thickness of 0.813mm, dielectric constant 3.38, loss tangent is
0.002, microstrip line in circuit with a thickness of 35um.
It is emulated using above-mentioned physical circuit, obtains the emulation testing figure such as Fig. 5 to Fig. 9.
Specifically, as shown in Figure 5 to Figure 6, Fig. 5 is the emulation testing figure of the S11 parameter of broadband LNA circuit, and Fig. 6 is broadband
The emulation testing figure of the S22 parameter of LNA circuit；The S11 parameter and S22 parameter of this broadband LNA circuit, in the working band of selection
In 2.5-3.5G below -10dB, it is seen then that LNA circuit in broadband provided in an embodiment of the present invention is used, broadband LNA circuit
Front end and rear end matching are good.
As shown in fig. 7, being the emulation testing figure of the S21 parameter of broadband LNA circuit；The gain of broadband LNA circuit, is working
It is 14.663dB on frequency point 2.5GHz, is 11.437dB, the metal-oxide-semiconductor with selection on working frequency points 3.5GHz
The given Reference Design of ATF54343datasheet is close, in the range of working band 2.5-3.5GHz, LNA circuit
Gain is above 11.437dB.As it can be seen that using LNA circuit in broadband provided in an embodiment of the present invention, it can be in wider working band
The upper working performance for keeping high-gain.
As shown in figure 8, Fig. 8 is the emulation testing figure of the noise of broadband LNA circuit；Broadband LNA circuit is in working frequency points
The noise of 2.5GHz is 0.48dB, is 0.689dB, entire working band 2.5-3.5GHz in the noise of working frequency points 3.5GHz
Interior, noise is less than 0.689dB.As it can be seen that using LNA circuit in broadband provided in an embodiment of the present invention, it can be in wider working band
The upper working performance for keeping low noise.
As shown in figure 9, Fig. 9 is the emulation testing figure of the coefficient of stability of broadband LNA circuit；Working band 0-6GHz with
On, the coefficient of stability of broadband LNA circuit is all larger than 1, it is seen then that LNA circuit in broadband provided in an embodiment of the present invention is used, it can be
Good stability is kept on wider working band, and self-excitation will not occur.
As the above analysis, LNA circuit in broadband provided in an embodiment of the present invention constructs matching network by microstrip line,
Matching network keeps impedance matching in wider frequency band, can be realized LNA circuit and keeps low noise on wider working band
The working performance of sound, high-gain.
The above is a preferred embodiment of the present invention, it is noted that for those skilled in the art
For, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications are also considered as
Protection scope of the present invention.
Claims (10)
1. a kind of broadband LNA circuit, which is characterized in that the circuit includes amplifier tube, the first matching network, the second matching network
With voltage bias module；First matching network includes the first sub- microstrip line, the second sub- microstrip line and the first microstrip line, described
Second matching network includes the sub- microstrip line of third, the 4th sub- microstrip line, the second microstrip line and third microstrip line；Wherein,
The first end of the voltage bias module is connect with the first end of the amplifier tube, the second end of the voltage bias module
It is connect with the second end of the amplifier tube；The third end of the voltage bias module is grounded；The third end of the amplifier tube is grounded；
The first end of the first sub- microstrip line is used for connection signal input port, the second end of the first sub- microstrip line and institute
The first end connection of the second sub- microstrip line is stated, the second end of the second sub- microstrip line and the first end of first microstrip line connect
It connects, the second end of first microstrip line is connect with the first end of the amplifier tube；Wherein, the described first sub- microstrip line with it is described
Second sub- microstrip line laid out in parallel is to form the first coupled microstrip line；
The first end of second microstrip line is connect with the second end of the amplifier tube, the second end of second microstrip line and institute
State the first end connection of the sub- microstrip line of third, the second end of the sub- microstrip line of third and the first end of the 4th sub- microstrip line
The second end of connection, the 4th sub- microstrip line is used for connection signal output port；The first end of the third microstrip line and institute
State the second end connection of the second microstrip line, the second end ground connection of the third microstrip line；Wherein, the sub- microstrip line of the third and institute
The 4th sub- microstrip line laid out in parallel is stated to form the second coupled microstrip line.
2. LNA circuit in broadband as described in claim 1, which is characterized in that the voltage bias module includes DC power supply,
One capacitor, the 4th microstrip line, the 5th microstrip line, first resistor, second resistance and the 6th microstrip line；
The anode of the DC power supply is connect with the first end of the 4th microstrip line, the second end of the 4th microstrip line and institute
The first end connection of the 5th microstrip line is stated, the second end of the 5th microstrip line is connect with the first end of the first resistor, institute
The second end for stating first resistor is connect with the first end of the second resistance, the second end of the second resistance and the described 6th micro-
First end connection with line, the first end of the first capacitor are connect with the anode of the DC power supply；
The second end of the first resistor is the first end of the voltage bias module, and the second end of the 4th microstrip line is institute
State the second end of voltage bias module；The cathode of the DC power supply be the voltage bias module third end, and with it is described
The second end of 6th microstrip line, the connection of the second end of the first capacitor.
3. LNA circuit in broadband as described in claim 1, which is characterized in that the circuit further includes the first radio frequency choke module
With the second radio frequency choke module；
The first end of the first radio frequency choke module is connect with the first end of the voltage bias module, and first radio frequency is gripped
The second end of flow module is connect with the first end of the amplifier tube；
The first end of the second radio frequency choke module is connect with the second end of the voltage bias module, and second radio frequency is gripped
The second end of flow module is connect with the second end of the amplifier tube.
4. LNA circuit in broadband as claimed in claim 3, which is characterized in that the first radio frequency choke module includes the 7th micro-
Band line and the first inductance；
The first end of 7th microstrip line be the first radio frequency choke module first end, the second of the 7th microstrip line
End is connect with the first end of first inductance, and the second end of first inductance is the second of the first radio frequency choke module
End.
5. LNA circuit in broadband as claimed in claim 3, which is characterized in that the second radio frequency choke module includes third electricity
Resistance, the 8th microstrip line and the second inductance；
The first end of the 3rd resistor be the second radio frequency choke module first end, the second end of the 3rd resistor with
The first end of 8th microstrip line connects, and the second end of the 8th microstrip line is connect with the first end of second inductance,
The second end of second inductance is the second end of the second radio frequency choke module.
6. LNA circuit in broadband as described in claim 1, which is characterized in that the circuit further includes the 9th microstrip line, and described
The first end of nine microstrip lines is connect with the third end of the amplifier tube, the second end ground connection of the 9th microstrip line.
7. LNA circuit in broadband as described in claim 1, which is characterized in that the circuit further includes the tenth microstrip line, the 11st
Microstrip line, the 12nd microstrip line and the 13rd microstrip line；
The first end of tenth microstrip line is for connecting the signal input port, the second end of the tenth microstrip line and institute
State the first end connection of the first sub- microstrip line；
The first end of 11st microstrip line is connect with the second end of first microstrip line, and the of the 11st microstrip line
Two ends are connect with the first end of the amplifier tube；
The first end of 12nd microstrip line is connect with the second end of the amplifier tube, the second end of the 12nd microstrip line
It is connect with the first end of second microstrip line；
The first end of 13rd microstrip line is connect with the second end of the 4th sub- microstrip line, the 13rd microstrip line
Second end is used for connection signal output port.
8. LNA circuit in broadband as claimed in claim 7, which is characterized in that the circuit further includes the second capacitor and third electricity
Hold；
The first end of second capacitor is connect with the second end of the tenth microstrip line, the second end of second capacitor and institute
State the first end connection of the first sub- microstrip line；
The first end of the third capacitor is connect with the second end of the 12nd microstrip line, the second end of the third capacitor with
The first end of second microstrip line connects.
9. LNA circuit in broadband as claimed in any one of claims 1 to 8, which is characterized in that the amplifier tube includes N-channel MOS
Pipe, the grid of the N-channel MOS pipe are the first end of the amplifier tube, and the drain electrode of the N-channel MOS pipe is the amplifier tube
Second end, the source electrode of the N-channel MOS pipe is the third end of the amplifier tube；Or,
The amplifier tube includes NPN type triode, and the base stage of the NPN type triode is the first end of the amplifier tube, described
The second end of the extremely described amplifier tube of the current collection of NPN type triode, the extremely described amplifier tube of transmitting of the NPN type triode
Third end.
10. a kind of broadband LNA device, which is characterized in that described device includes the broadband LNA as described in any one of claim 1 to 9
Circuit, medium substrate and metal floor；
The broadband LNA circuit is attached to the first surface of the medium substrate, and the metal floor is attached to the medium base
The second surface of plate.
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| CN112468105A (en) * | 2020-11-04 | 2021-03-09 | 深圳市普威技术有限公司 | Dual-band LNA matching circuit |
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