CN110098808B - Broadband LNA circuit and device - Google Patents

Broadband LNA circuit and device Download PDF

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Publication number
CN110098808B
CN110098808B CN201910240275.5A CN201910240275A CN110098808B CN 110098808 B CN110098808 B CN 110098808B CN 201910240275 A CN201910240275 A CN 201910240275A CN 110098808 B CN110098808 B CN 110098808B
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microstrip line
sub
amplifying tube
radio frequency
module
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CN110098808A (en
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林跃龙
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Shenzhen Lianzhou International Technology Co Ltd
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Shenzhen Lianzhou International Technology Co Ltd
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/42—Modifications of amplifiers to extend the bandwidth
    • H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
    • H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03G—CONTROL OF AMPLIFICATION
    • H03G3/00—Gain control in amplifiers or frequency changers
    • H03G3/20—Automatic control
    • H03G3/30—Automatic control in amplifiers having semiconductor devices
    • H03G3/3036—Automatic control in amplifiers having semiconductor devices in high-frequency amplifiers or in frequency-changers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
    • Y02D30/00—Reducing energy consumption in communication networks
    • Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microwave Amplifiers (AREA)

Abstract

The invention discloses a broadband LNA circuit and a device, wherein in the circuit, a first end and a second end of a voltage bias module are respectively connected with a first end and a second end of an amplifying tube; the first sub-microstrip line is connected between the signal input port and the first end of the second sub-microstrip line, the first microstrip line is connected between the second end of the second sub-microstrip line and the first end of the amplifying tube, and the first sub-microstrip line and the second sub-microstrip line are arranged in parallel to form a first coupling microstrip line; the first end and the second end of the second microstrip line are respectively connected with the second end of the amplifying tube and the first end of the third sub microstrip line, the fourth sub microstrip line is connected between the second end of the third sub microstrip line and the signal output port, the third sub microstrip line and the fourth sub microstrip line are arranged in parallel to form a second coupling microstrip line, and the first end of the third microstrip line is connected with the second end of the second microstrip line. The invention can ensure that the LNA circuit keeps the working performance of low noise and high gain in a wider working frequency band.

Description

Broadband LNA circuit and device
Technical Field
The present invention relates to the field of electronic technologies, and in particular, to a wideband LNA circuit and apparatus.
Background
The LNA circuit (Low Noise Amplifier, low noise amplifying circuit) is at the front end position in the microwave system or the radio frequency receiving system, the noise coefficient and the gain coefficient of the LNA circuit have great influence on the performance of the receiving whole machine, and the design of the LNA circuit is particularly important.
In the prior art, various discrete components are often used to construct a matching network in an LNA circuit, and most LNA circuits can only work at a fixed single frequency point or multiple frequency points with low noise and high gain. However, the triode or the MOS transistor adopted by the LNA circuit has a nonlinear characteristic, when the working frequency point is changed, the input impedance of the LNA circuit is correspondingly changed, and the LNA circuit adopting the prior art can cause mismatch of a corresponding matching network, so that the LNA circuit cannot keep the working performance of low noise and high gain.
Disclosure of Invention
The technical problem to be solved by the embodiment of the invention is to provide a broadband LNA circuit and a device, which can realize the working performance of the LNA circuit with low noise and high gain on a wider working frequency band.
In a first aspect, an embodiment of the present invention provides a wideband LNA circuit, the circuit including an amplifying tube, a first matching network, a second matching network, and a voltage bias module; the first matching network comprises a first sub-microstrip line, a second sub-microstrip line and a first microstrip line, and the second matching network comprises a third sub-microstrip line, a fourth sub-microstrip line, a second microstrip line and a third microstrip line; wherein, the liquid crystal display device comprises a liquid crystal display device,
the first end of the voltage bias module is connected with the first end of the amplifying tube, and the second end of the voltage bias module is connected with the second end of the amplifying tube; the third end of the voltage bias module is grounded; the third end of the amplifying tube is grounded;
the first end of the first sub-microstrip line is used for being connected with a signal input port, the second end of the first sub-microstrip line is connected with the first end of the second sub-microstrip line, the second end of the second sub-microstrip line is connected with the first end of the first microstrip line, and the second end of the first microstrip line is connected with the first end of the amplifying tube; the first sub-microstrip line and the second sub-microstrip line are arranged in parallel to form a first coupling microstrip line;
the first end of the second microstrip line is connected with the second end of the amplifying tube, the second end of the second microstrip line is connected with the first end of the third sub-microstrip line, the second end of the third sub-microstrip line is connected with the first end of the fourth sub-microstrip line, and the second end of the fourth sub-microstrip line is used for being connected with a signal output port; the first end of the third microstrip line is connected with the second end of the second microstrip line, and the second end of the third microstrip line is grounded; the third sub-microstrip line and the fourth sub-microstrip line are arranged in parallel to form a second coupling microstrip line.
Further, the voltage bias module comprises a direct-current power supply, a first capacitor, a fourth microstrip line, a fifth microstrip line, a first resistor, a second resistor and a sixth microstrip line;
the positive electrode of the direct current power supply is connected with the first end of the fourth microstrip line, the second end of the fourth microstrip line is connected with the first end of the fifth microstrip line, the second end of the fifth microstrip line is connected with the first end of the first resistor, the second end of the first resistor is connected with the first end of the second resistor, the second end of the second resistor is connected with the first end of the sixth microstrip line, and the first end of the first capacitor is connected with the positive electrode of the direct current power supply;
the second end of the first resistor is the first end of the voltage bias module, and the second end of the fourth microstrip line is the second end of the voltage bias module; the negative electrode of the direct current power supply is a third end of the voltage bias module and is connected with the second end of the sixth microstrip line and the second end of the first capacitor.
Further, the circuit further comprises a first radio frequency choke module and a second radio frequency choke module;
the first end of the first radio frequency choke module is connected with the first end of the voltage bias module, and the second end of the first radio frequency choke module is connected with the first end of the amplifying tube;
the first end of the second radio frequency choke module is connected with the second end of the voltage bias module, and the second end of the second radio frequency choke module is connected with the second end of the amplifying tube.
Further, the first radio frequency choke module comprises a seventh microstrip line and a first inductor;
the first end of the seventh microstrip line is the first end of the first radio frequency choke module, the second end of the seventh microstrip line is connected with the first end of the first inductor, and the second end of the first inductor is the second end of the first radio frequency choke module.
Further, the second radio frequency choke module comprises a third resistor, an eighth microstrip line and a second inductor;
the first end of the third resistor is the first end of the second radio frequency choke module, the second end of the third resistor is connected with the first end of the eighth microstrip line, the second end of the eighth microstrip line is connected with the first end of the second inductor, and the second end of the second inductor is the second end of the second radio frequency choke module.
Further, the circuit further comprises a ninth microstrip line, a first end of the ninth microstrip line is connected with the third end of the amplifying tube, and a second end of the ninth microstrip line is grounded.
Further, the circuit further includes a tenth microstrip line, an eleventh microstrip line, a twelfth microstrip line, and a thirteenth microstrip line;
the first end of the tenth microstrip line is used for being connected with the signal input port, and the second end of the tenth microstrip line is connected with the first end of the first sub microstrip line;
the first end of the eleventh microstrip line is connected with the second end of the first microstrip line, and the second end of the eleventh microstrip line is connected with the first end of the amplifying tube;
the first end of the twelfth microstrip line is connected with the second end of the amplifying tube, and the second end of the twelfth microstrip line is connected with the first end of the second microstrip line;
the first end of the thirteenth microstrip line is connected with the second end of the fourth sub-microstrip line, and the second end of the thirteenth microstrip line is used for being connected with a signal output port.
Further, the circuit further comprises a second capacitor and a third capacitor;
the first end of the second capacitor is connected with the second end of the tenth microstrip line, and the second end of the second capacitor is connected with the first end of the first sub-microstrip line;
the first end of the third capacitor is connected with the second end of the twelfth microstrip line, and the second end of the third capacitor is connected with the first end of the second microstrip line.
Further, the amplifying tube comprises an N-channel MOS tube, the gate of the N-channel MOS tube is a first end of the amplifying tube, the drain of the N-channel MOS tube is a second end of the amplifying tube, and the source of the N-channel MOS tube is a third end of the amplifying tube; or alternatively, the first and second heat exchangers may be,
the amplifying tube comprises an NPN triode, the base electrode of the NPN triode is the first end of the amplifying tube, the collector electrode of the NPN triode is the second end of the amplifying tube, and the emitter electrode of the NPN triode is the third end of the amplifying tube.
In a second aspect, embodiments of the present invention also provide a wideband LNA apparatus, the apparatus comprising a wideband LNA circuit as defined in any one of the first aspects above, a dielectric substrate and a metal floor;
the wideband LNA circuit is attached to a first surface of the dielectric substrate, and the metal floor is attached to a second surface of the dielectric substrate.
According to the broadband LNA circuit and the device, the matching network is constructed through the microstrip line, and the matching network keeps impedance matching in a wider frequency band, so that the LNA circuit keeps low-noise and high-gain working performance in a wider working frequency band.
Drawings
FIG. 1 is a schematic diagram of a preferred embodiment of a wideband LNA circuit provided in accordance with an embodiment of the present invention;
FIG. 2 is a reference diagram of the operating principle of the second matching network in the wideband LNA circuit shown in FIG. 1;
FIG. 3 is a schematic diagram of another preferred embodiment of a wideband LNA circuit provided by an embodiment of the present invention;
FIG. 4 is a schematic diagram of a preferred embodiment of a wideband LNA device provided by an embodiment of the invention;
FIG. 5 is a simulation test chart of the S11 parameter of the wideband LNA circuit;
FIG. 6 is a simulation test chart of the S22 parameter of the wideband LNA circuit;
FIG. 7 is a simulation test chart of the S21 parameter of the wideband LNA circuit;
FIG. 8 is a simulated test pattern of noise for a wideband LNA circuit;
fig. 9 is a simulation test diagram of the stability factor of a wideband LNA circuit.
Detailed Description
The following description of the embodiments of the present invention will be made clearly and completely with reference to the accompanying drawings, in which it is apparent that the embodiments described are only some embodiments of the present invention, but not all embodiments. All other embodiments, which can be made by those skilled in the art based on the embodiments of the invention without making any inventive effort, are intended to be within the scope of the invention.
Referring to fig. 1, a schematic diagram of a preferred embodiment of a wideband LNA circuit according to the present invention is shown; the circuit comprises an amplifying tube 1, a first matching network 2, a second matching network 3 and a voltage bias module 4; the first matching network 2 comprises a first sub-microstrip line A1, a second sub-microstrip line A2 and a first microstrip line M1, and the second matching network 3 comprises a third sub-microstrip line A3, a fourth sub-microstrip line A4, a second microstrip line M2 and a third microstrip line M3; wherein, the liquid crystal display device comprises a liquid crystal display device,
the first end of the voltage bias module 4 is connected with the first end of the amplifying tube 1, and the second end of the voltage bias module 4 is connected with the second end of the amplifying tube 1; the third end of the voltage bias module 4 is grounded; the third end of the amplifying tube 1 is grounded;
the first end of the first sub-microstrip line A1 is used for being connected with a signal input port 5, the second end of the first sub-microstrip line A1 is connected with the first end of the second sub-microstrip line A2, the second end of the second sub-microstrip line A2 is connected with the first end of the first microstrip line M1, and the second end of the first microstrip line M1 is connected with the first end of the amplifying tube 1; the first sub-microstrip line A1 and the second sub-microstrip line A2 are arranged in parallel to form a first coupling microstrip line;
the first end of the second microstrip line M2 is connected with the second end of the amplifying tube 1, the second end of the second microstrip line M2 is connected with the first end of the third sub-microstrip line A3, the second end of the third sub-microstrip line A3 is connected with the first end of the fourth sub-microstrip line A4, and the second end of the fourth sub-microstrip line A4 is used for being connected with the signal output port 6; the first end of the third microstrip line M3 is connected with the second end of the second microstrip line M2, and the second end of the third microstrip line M3 is grounded; the third sub-microstrip line A3 and the fourth sub-microstrip line A4 are arranged in parallel to form a second coupling microstrip line.
The first sub-microstrip line and the second sub-microstrip line are arranged in parallel, namely the first sub-microstrip line and the second sub-microstrip line are connected in a single-ended short circuit mode and are parallel to each other and are close to each other, so that electric fields transmitted by the first sub-microstrip line and the second sub-microstrip line are coupled with each other, and a first coupling microstrip line is formed by the first sub-microstrip line and the second sub-microstrip line; similarly, the third sub-microstrip line and the fourth sub-microstrip line are connected in a single-end short-circuit mode and are parallel to each other and close to each other, so that electric fields transmitted by the third sub-microstrip line and the fourth sub-microstrip line are coupled with each other, and a second coupling microstrip line is formed by the third sub-microstrip line and the fourth sub-microstrip line.
In the LNA circuit provided by the embodiment of the invention, for the first matching network, the first matching network comprises a first sub-microstrip line, a second sub-microstrip line and a first microstrip line, the input impedance of the LNA can be converted into the real part which is equal on the working frequency band through the first microstrip line, the imaginary part of the input impedance of the first matching network is close to 0, and the input impedance of the broadband LNA circuit at the working frequency only remains real impedance; the first coupling microstrip line is formed by the first sub microstrip line and the second sub microstrip line, and the real impedance is matched to the source impedance on a wider working frequency band. For the second matching network, the second matching network comprises a third sub-microstrip line, a fourth sub-microstrip line, a second microstrip line and a third microstrip line, and the input impedance of the LNA can be converted into the input impedance with equal real part and symmetrical imaginary part on the working frequency band about the center of the working frequency band through the second microstrip line; the third microstrip line is a microstrip line connected in a single-ended short circuit way, and generates impedance symmetrical to the imaginary part of the input impedance of the LNA through the third microstrip line so as to offset the imaginary part of the impedance, so that the input impedance of the broadband LNA circuit at the working frequency only remains real impedance; by forming the second coupling microstrip line from the third sub-microstrip line and the fourth sub-microstrip line, the real impedance is matched to the source impedance over a wider operating frequency band. The matching of the LNA circuit is realized through the first matching network and the second matching network, so that the radio frequency signal is transmitted to the output port as much as possible.
Specifically, in the wideband LNA circuit provided by the embodiment of the present invention, a radio frequency signal enters from the signal input port 5, enters into the amplifying tube through the first matching network, and during the period, the voltage bias module adjusts the voltages at the first end and the second end of the amplifying tube, so that the amplifying tube works in the amplifying region, the amplitude of the radio frequency signal rises, the noise coefficient is improved, and then flows into the second matching network and the signal output port to be output.
The amplifying tube may be a MOS tube, a triode, a composite tube, or the like.
According to the broadband LNA circuit provided by the invention, the first matching network and the second matching network are constructed through the microstrip line, impedance matching is kept in a wider working frequency band through the first matching network and the second matching network, the matching degree is good, radio frequency signals are basically transmitted from the signal input port to the signal output port, and the LNA circuit can keep working performance of low noise and high gain on the wider working frequency band.
Because the design principles of the first matching network and the second matching network are the same, and the imaginary part of the input impedance of the first matching network is close to 0, for convenience of understanding, the design theory of the broadband LNA circuit provided by the embodiment of the present invention is described below by taking the second matching network as an example:
assume that the upper limit frequency of the operating band of the wideband LNA circuit is f 1 And a lower limit frequency f 2 ，f 2 ＞f 1 Frequency ratio k=f 2 /f 1 The method comprises the steps of carrying out a first treatment on the surface of the Referring to fig. 2, a reference diagram of the working principle of the second matching network in the wideband LNA circuit shown in fig. 1 is shown;
z is as follows id ＝R d1 +jX d1 Is a wideband LNA circuit at an upper limit frequency f 1 Input impedance when the second matching network is not added in operation, Z id ＝R d2 +jX d2 Is a wideband LNA circuit at a lower limit frequency f 2 The input impedance when the second matching network is not in operation.
(1) Characteristic impedance Z for the second microstrip line 1 Length of electricity theta 1 Is designed according to the following steps:
input impedance of wideband LNA circuit at upper limit frequency f 1 The expression of (2) is:
the input impedance of the wideband LNA circuit is at the lower limit frequency f 2 The expression of (2) is:
the second microstrip line has an upper limit frequency f 1 Electric length θ (f) in operation 1 ) And at a lower limit frequency f 2 θ (f) in operation 2 ) The following relationship needs to be satisfied:
θ(f 2 )＝kθ(f 1 )＝kθ 1 (3)
substituting the above expression (3) into the expression (1) and the expression (2), respectively, can be obtained
Due to the conjugation of the input impedance at the upper and lower frequencies, there is
Z in1 (f 1 )＝[Z in2 (f 2 )] * (6)
By combining the formulas (4), (5) and (6), it is possible to obtain:
wherein, n takes the value of n=1, 2,3, ….
(2) Characteristic impedance Z for third microstrip line 2 Length of electricity theta 2 Is designed according to the following steps:
the admittance of the third microstrip line has the expression:
the LNA circuit input admittance after the second microstrip line is connected is expressed as:
Y in1 (f 1 )＝G-jB (10)
Y in1 (f 2 )＝G+jB (11)
wherein, the liquid crystal display device comprises a liquid crystal display device,
in order for the third microstrip line to cancel the imaginary part of the impedance, it is necessary toSo that the admittance of the third microstrip line in the working frequency band is zero at the central frequency point and at the upper limit frequency f 1 Lower limit frequency f 2 And input impedance Z in1 The admittance and imaginary parts of (a) are opposite, i.e. the following formula needs to be satisfied:
from equation (16) and equation (17):
(3) Odd-mode characteristic impedance Z for a second coupling microstrip line composed of a third sub-microstrip line and a fourth sub-microstrip line ce Characteristic impedance Z of even mode co And electric length theta 3 Is designed according to the following steps:
the ABCD matrix of the second coupling microstrip line consisting of the third sub-microstrip line and the fourth sub-microstrip line is as follows:
due to the requirement of a wider real impedance R of the operating band via the second coupling microstrip line in4 Matching to source impedance R 0 On the other hand, the source impedance R 0 (real impedance R) in4 ) Input impedance Z after LNA circuit imaginary part counteracts in3 (i.e., R: R) in3 ) The relation of (2) is:
i.e. in the operating band f 1 The method comprises the following steps:
in the operating frequency band f 2 The method comprises the following steps:
from the formulas (22) and (23), the characteristic impedance of the second coupling microstrip line composed of the third sub microstrip line and the fourth sub microstrip line can be calculated as:
wherein R is in Refers to R in the above formula (22) 0 ，R s Refers to R in3 。
The electrical length of the coupled microstrip line can be obtained from equations (21) - (25) as:
(1+k)θ 3 ＝nπ (26)
substitution of formula (27) into (24) - (27), respectively, can result in
Wherein, the liquid crystal display device comprises a liquid crystal display device,
the design of the second matching network is completed, and the design principle of the first matching network is similar, and is not repeated here. As can be seen from the above description of the design principle, the electrical lengths of the first microstrip line M1 and the second microstrip line M2 are pi/(1+k) of the center frequency; the electrical length of the third microstrip line M3 is pi/(1+k) of the center frequency; the equivalent electrical lengths of the first coupling microstrip line formed by the first sub microstrip line and the second coupling microstrip line formed by the third sub microstrip line and the fourth sub microstrip line are pi/(1+k) of the center frequency, wherein k is f 2 /f 1 。
Further, please refer to fig. 3, which is a schematic diagram illustrating a configuration of another preferred embodiment of a wideband LNA circuit according to an embodiment of the present invention; the voltage bias module 4 comprises a direct current power supply DC, a first capacitor C1, a fourth microstrip line M4, a fifth microstrip line M5, a first resistor R1, a second resistor R2 and a sixth microstrip line M6;
the positive electrode of the direct current power supply DC is connected with the first end of the fourth microstrip line M4, the second end of the fourth microstrip line M4 is connected with the first end of the fifth microstrip line M5, the second end of the fifth microstrip line M5 is connected with the first end of the first resistor R1, the second end of the first resistor R1 is connected with the first end of the second resistor R2, the second end of the second resistor R2 is connected with the first end of the sixth microstrip line M6, and the first end of the first capacitor C1 is connected with the positive electrode of the direct current power supply DC;
the second end of the first resistor R1 is the first end of the voltage bias module 4, and the second end of the fourth microstrip line M4 is the second end of the voltage bias module 4; the negative electrode of the direct current power supply DC is a third end of the voltage bias module 4, and is connected to the second end of the sixth microstrip line M6 and the second end of the first capacitor C1.
According to the broadband LNA circuit provided by the invention, the voltage bias module is constructed through the direct-current power supply, the first capacitor, the fourth microstrip line, the fifth microstrip line, the first resistor, the second resistor and the sixth microstrip line, and direct-current and direct-current voltage can be provided for the amplifying tube, so that the amplifying tube works at a proper and stable static working point.
Further, the circuit also comprises a first radio frequency choke module 7 and a second radio frequency choke module 8;
a first end of the first radio frequency choke module 7 is connected with a first end of the voltage bias module 4, and a second end of the first radio frequency choke module 7 is connected with a first end of the amplifying tube 4;
the first end of the second rf choke module 8 is connected to the second end of the voltage bias module 4, and the second end of the second rf choke module 8 is connected to the second end of the amplifying tube 4.
The broadband LNA circuit provided by the embodiment of the invention comprises the first radio frequency choke module and the second radio frequency choke module, wherein the first radio frequency choke module is connected between the first end of the voltage bias module and the first end of the amplifying tube, and the second radio frequency choke module is connected between the second end of the voltage bias module and the second end of the amplifying tube, so that radio frequency signals can be restrained from being input into the voltage bias module, and normal operation of the circuit is ensured.
Further, the first rf choke module 7 includes a seventh microstrip line M7 and a first inductance L1;
the first end of the seventh microstrip line M7 is the first end of the first rf choke module 7, the second end of the seventh microstrip line M7 is connected to the first end of the first inductor L1, and the second end of the first inductor L1 is the second end of the first rf choke module 7.
Specifically, a first radio frequency choke module is constructed through the seventh microstrip line and the first inductor, so that the first radio frequency choke module can inhibit radio frequency signals from flowing into the voltage bias module from the first end of the amplifying tube.
Further, the second rf choke module 8 includes a third resistor R3, an eighth microstrip line M8, and a second inductance L2;
the first end of the third resistor R3 is the first end of the second rf choke module 8, the second end of the third resistor R3 is connected with the first end of the eighth microstrip line M8, the second end of the eighth microstrip line M8 is connected with the first end of the second inductor L2, and the second end of the second inductor L2 is the second end of the second rf choke module 8.
Specifically, a second radio frequency choke module is constructed through the third resistor, the eighth microstrip line and the second inductor, so that the second radio frequency choke module can inhibit radio frequency signals from flowing into the voltage bias module from the second end of the amplifying tube.
Further, the circuit further includes a ninth microstrip line M9, a first end of the ninth microstrip line M9 is connected to the third end of the amplifying tube 1, and a second end of the ninth microstrip line M9 is grounded.
Specifically, the wideband LNA circuit provided by the embodiment of the present invention further includes a ninth microstrip line, and the third end of the amplifying tube is grounded through the ninth microstrip line, so as to improve stability of the wideband LNA.
Further, the circuit further includes a tenth microstrip line M10, an eleventh microstrip line M11, a twelfth microstrip line M12, and a thirteenth microstrip line M13;
a first end of the tenth microstrip line M10 is configured to be connected to the signal input port 5, and a second end of the tenth microstrip line M10 is connected to the first end of the first sub microstrip line A1;
a first end of the eleventh microstrip line M11 is connected to a second end of the first microstrip line M1, and a second end of the eleventh microstrip line M11 is connected to the first end of the amplifying tube 1;
a first end of the twelfth microstrip line M12 is connected to the second end of the amplifying tube 1, and a second end of the twelfth microstrip line M12 is connected to the first end of the second microstrip line M2;
the first end of the thirteenth microstrip line M13 is connected to the second end of the fourth sub-microstrip line A4, and the second end of the thirteenth microstrip line M13 is used to connect to the signal output port 6.
Specifically, the wideband LNA circuit provided by the embodiment of the present invention further includes a tenth microstrip line, an eleventh microstrip line, a twelfth microstrip line, and a thirteenth microstrip line, which can more effectively transmit radio frequency signals.
Further, the circuit further comprises a second capacitor C2 and a third capacitor C3;
the first end of the second capacitor C2 is connected to the second end of the tenth microstrip line M10, and the second end of the second capacitor C2 is connected to the first end of the first sub-microstrip line A1;
the first end of the third capacitor C3 is connected to the second end of the twelfth microstrip line M12, and the second end of the third capacitor C3 is connected to the first end of the second microstrip line C2.
Specifically, the wideband LNA circuit provided by the embodiment of the invention further comprises a second capacitor and a third capacitor, which can isolate the low-frequency signal input by the front end from the low-frequency signal input by the rear end, thereby further ensuring the normal operation of the wideband LNA circuit.
Further, the amplifying tube 1 includes an N-channel MOS tube, the gate of the N-channel MOS tube is a first end of the amplifying tube 1, the drain of the N-channel MOS tube is a second end of the amplifying tube 1, and the source of the N-channel MOS tube is a third end of the amplifying tube 1; or alternatively, the first and second heat exchangers may be,
the amplifier 1 comprises an NPN triode, the base of the NPN triode is the first end of the amplifier 1, the collector of the NPN triode is the second end of the amplifier 1, and the emitter of the NPN triode is the third end of the amplifier 1.
The broadband LNA circuit provided by the embodiment of the invention has the advantages that the amplifying tube comprises the N-channel MOS tube Q1 or the NPN triode, and the MOS tube or the triode can be utilized to amplify the radio frequency signals.
In specific implementation, the broadband LNA circuit provided by the invention has the advantages that radio frequency signals enter from the signal input port 5 and enter the amplifying tube through the first matching network, and during the period, the voltage bias module adjusts the voltages of the first end and the second end of the amplifying tube, so that the amplifying tube works in an amplifying region, the amplitude of the radio frequency signals rises, the noise coefficient is improved, and then the radio frequency signals flow into the second matching network and the signal output port for output.
Compared with the LNA circuit in the prior art, the wideband LNA circuit provided by the embodiment of the invention is constructed by discrete elements, and the matching network is constructed by microstrip lines, so that the matching network keeps impedance matching in a wider frequency band, and the LNA circuit keeps the working performance of low noise and high gain in a wider working frequency band.
It should be noted that fig. 3 only illustrates a wideband LNA circuit when the amplifying transistor 1 includes the N-channel MOS transistor Q1, and based on the above description of the amplifying transistor 1 including the NPN transistor and the characteristics of the transistor, those skilled in the art can clearly know the connection manner of each component in the wideband LNA circuit when the amplifying transistor 1 includes the NPN transistor.
In a second aspect, the present invention further provides a wideband LNA device, and please refer to fig. 4, which is a schematic structural diagram of a preferred embodiment of the wideband LNA device according to the present invention;
the apparatus comprising a wideband LNA circuit 9, a dielectric substrate 10 and a metal floor 11 as provided in any of the above first aspects;
the wideband LNA circuit 9 is attached to a first surface of the dielectric substrate 10, and the metal floor 11 is attached to a second surface of the dielectric substrate 10.
The wideband LNA device provided by the embodiment of the invention has the advantages that the matching network is constructed in the wideband LNA circuit through the microstrip line, and the matching network keeps impedance matching in a wider frequency band, so that the LNA device can keep the working performance of low noise and high gain on a wider working frequency band.
The working principle and the beneficial effects of the wideband LNA device provided by the embodiments of the present invention correspond to those of the wideband LNA circuit provided above, so that the description thereof will not be repeated here.
In order to better illustrate the beneficial effects of the wideband LNA circuit provided by the embodiments of the present invention, the following description is related to parameters and simulation test patterns of a specific wideband LNA circuit:
taking the working frequency band of 2.5 GHz-3.5 GHz as an example, the wideband LNA circuit provided by the embodiment of the invention is adopted, and the parameters of the wideband LNA circuit are set as follows:
the length of the tenth microstrip line is 5mm, the width of the tenth microstrip line is 1.8mm, the length of the first sub microstrip line is 34.9mm, the width of the first sub microstrip line is 1.3mm, the length of the second sub microstrip line is 34.9mm, the width of the second sub microstrip line is 0.8mm, and the parallel arrangement interval between the first sub microstrip line and the second sub microstrip line is 1.29mm, so as to form a first coupling microstrip line; the length of the first microstrip line is 2.5mm, the width is 4.86mm, the length of the eleventh microstrip line is 5mm, the width is 2mm, the length of the fourth microstrip line is 4mm, the width is 2mm, the length of the fifth microstrip line is 2.6mm, the width is 2mm, the length of the sixth microstrip line is 3mm, the width is 2mm, the length of the seventh microstrip line is 2mm, the width is 1.2mm, the length of the eighth microstrip line is 4.8mm, the width is 1.8mm, the length of the ninth microstrip line is 1.85mm, the width is 1mm, the length of the twelfth microstrip line is 2.8mm, the width is 1.1mm, the length of the second microstrip line is 7mm, the width is 1mm; the length of the third microstrip line is 42mm, the width of the third microstrip line is 3.6mm, the length of the third sub microstrip line is 37mm, the width of the third sub microstrip line is 1mm, the length of the fourth sub microstrip line is 37mm, the width of the fourth sub microstrip line is 0.9mm, and the interval between the third sub microstrip line and the fourth sub microstrip line which are arranged in parallel is 1mm, so that a second coupling microstrip line is formed; the thirteenth microstrip line has a length of 3mm and a width of 2mm.
The first resistor R1 is 60 omega, and the second resistor R2 is 300 omega; the first inductance L1 is 2.2uH, and the second inductance L2 is 1.2uH; the third resistor R3 is 10Ω; the second capacitor C2 is 4.7pF and the third capacitor C3 is 1pF; the amplifying tube comprises an N-channel MOS tube ATF54143; the voltage of the direct current power supply DC is 5V.
The dielectric substrate was formed of rogers 4003, which had a thickness of 0.813mm, a dielectric constant of 3.38, a loss tangent of 0.002, and a microstrip line in the circuit of 35um.
Simulation is performed by adopting the specific circuit, and simulation test diagrams as shown in fig. 5 to 9 are obtained.
Specifically, as shown in fig. 5 to 6, fig. 5 is a simulation test chart of the S11 parameter of the wideband LNA circuit, and fig. 6 is a simulation test chart of the S22 parameter of the wideband LNA circuit; the S11 parameter and the S22 parameter of the broadband LNA circuit are below-10 dB in the selected working frequency band of 2.5-3.5G, and therefore, the front end and the rear end of the broadband LNA circuit are well matched by adopting the broadband LNA circuit provided by the embodiment of the invention.
As shown in fig. 7, a simulation test chart of the S21 parameter of the wideband LNA circuit; the gain of the broadband LNA circuit is 14.663dB at the 2.5GHz working frequency point, 11.437dB at the 3.5GHz working frequency point, and is similar to the reference design given by the selected MOS tube ATF54343datasheet, and the gain of the LNA circuit is higher than 11.437dB within the range of 2.5-3.5GHz working frequency band. Therefore, the wideband LNA circuit provided by the embodiment of the invention can maintain the working performance of high gain on a wider working frequency band.
As shown in fig. 8, fig. 8 is a simulation test chart of noise of the wideband LNA circuit; the noise of the broadband LNA circuit at the working frequency point of 2.5GHz is 0.48dB, the noise at the working frequency point of 3.5GHz is 0.689dB, and the noise is less than 0.689dB in the whole working frequency band of 2.5-3.5 GHz. Therefore, the broadband LNA circuit provided by the embodiment of the invention can maintain the working performance of low noise on a wider working frequency band.
As shown in fig. 9, fig. 9 is a simulation test chart of the stability factor of the wideband LNA circuit; the stability coefficient of the broadband LNA circuit is larger than 1 above the working frequency band of 0-6GHz, and therefore, the broadband LNA circuit provided by the embodiment of the invention can maintain good stability on a wider working frequency band and can not generate self excitation.
From the above analysis, the wideband LNA circuit provided by the embodiments of the present invention constructs the matching network through the microstrip line, and the matching network maintains impedance matching in a wider frequency band, so as to achieve the low noise and high gain performance of the LNA circuit in a wider operating frequency band.
While the foregoing is directed to the preferred embodiments of the present invention, it will be appreciated by those skilled in the art that changes and modifications may be made without departing from the principles of the invention, such changes and modifications are also intended to be within the scope of the invention.

Claims (9)

1. A broadband LNA circuit, characterized in that the circuit comprises an amplifying tube, a first matching network, a second matching network and a voltage bias module; the first matching network comprises a first sub-microstrip line, a second sub-microstrip line and a first microstrip line, and the second matching network comprises a third sub-microstrip line, a fourth sub-microstrip line, a second microstrip line and a third microstrip line; wherein, the liquid crystal display device comprises a liquid crystal display device,
the first end of the voltage bias module is connected with the first end of the amplifying tube, and the second end of the voltage bias module is connected with the second end of the amplifying tube; the third end of the voltage bias module is grounded; the third end of the amplifying tube is grounded;
the first end of the first sub-microstrip line is used for being connected with a signal input port, the second end of the first sub-microstrip line is connected with the first end of the second sub-microstrip line, the second end of the second sub-microstrip line is connected with the first end of the first microstrip line, and the second end of the first microstrip line is connected with the first end of the amplifying tube; the first sub-microstrip line and the second sub-microstrip line are arranged in parallel to form a first coupling microstrip line;
the first end of the second microstrip line is connected with the second end of the amplifying tube, the second end of the second microstrip line is connected with the first end of the third sub-microstrip line, the second end of the third sub-microstrip line is connected with the first end of the fourth sub-microstrip line, and the second end of the fourth sub-microstrip line is used for being connected with a signal output port; the first end of the third microstrip line is connected with the second end of the second microstrip line, and the second end of the third microstrip line is grounded; wherein the third sub-microstrip line and the fourth sub-microstrip line are arranged in parallel to form a second coupling microstrip line;
the voltage bias module comprises a direct-current power supply, a first capacitor, a fourth microstrip line, a fifth microstrip line, a first resistor, a second resistor and a sixth microstrip line;
the positive electrode of the direct current power supply is connected with the first end of the fourth microstrip line, the second end of the fourth microstrip line is connected with the first end of the fifth microstrip line, the second end of the fifth microstrip line is connected with the first end of the first resistor, the second end of the first resistor is connected with the first end of the second resistor, the second end of the second resistor is connected with the first end of the sixth microstrip line, and the first end of the first capacitor is connected with the positive electrode of the direct current power supply;
the second end of the first resistor is the first end of the voltage bias module, and the second end of the fourth microstrip line is the second end of the voltage bias module; the negative electrode of the direct current power supply is a third end of the voltage bias module and is connected with the second end of the sixth microstrip line and the second end of the first capacitor.
2. The wideband LNA circuit of claim 1, where the circuit further comprises a first radio frequency choke module and a second radio frequency choke module;
the first end of the first radio frequency choke module is connected with the first end of the voltage bias module, and the second end of the first radio frequency choke module is connected with the first end of the amplifying tube;
the first end of the second radio frequency choke module is connected with the second end of the voltage bias module, and the second end of the second radio frequency choke module is connected with the second end of the amplifying tube.
3. The wideband LNA circuit of claim 2, wherein the first radio frequency choke module comprises a seventh microstrip line and a first inductance;
the first end of the seventh microstrip line is the first end of the first radio frequency choke module, the second end of the seventh microstrip line is connected with the first end of the first inductor, and the second end of the first inductor is the second end of the first radio frequency choke module.
4. The wideband LNA circuit of claim 2, wherein the second radio frequency choke module comprises a third resistor, an eighth microstrip line and a second inductance;
the first end of the third resistor is the first end of the second radio frequency choke module, the second end of the third resistor is connected with the first end of the eighth microstrip line, the second end of the eighth microstrip line is connected with the first end of the second inductor, and the second end of the second inductor is the second end of the second radio frequency choke module.
5. The wideband LNA circuit of claim 1, further comprising a ninth microstrip line, a first end of the ninth microstrip line being connected to the third end of the amplifying tube, a second end of the ninth microstrip line being grounded.
6. The wideband LNA circuit of claim 1, where the circuit further comprises a tenth microstrip line, an eleventh microstrip line, a twelfth microstrip line, and a thirteenth microstrip line;
the first end of the tenth microstrip line is used for being connected with the signal input port, and the second end of the tenth microstrip line is connected with the first end of the first sub microstrip line;
the first end of the eleventh microstrip line is connected with the second end of the first microstrip line, and the second end of the eleventh microstrip line is connected with the first end of the amplifying tube;
the first end of the twelfth microstrip line is connected with the second end of the amplifying tube, and the second end of the twelfth microstrip line is connected with the first end of the second microstrip line;
the first end of the thirteenth microstrip line is connected with the second end of the fourth sub-microstrip line, and the second end of the thirteenth microstrip line is used for being connected with a signal output port.
7. The wideband LNA circuit of claim 6, where the circuit further comprises a second capacitor and a third capacitor;
the first end of the second capacitor is connected with the second end of the tenth microstrip line, and the second end of the second capacitor is connected with the first end of the first sub-microstrip line;
the first end of the third capacitor is connected with the second end of the twelfth microstrip line, and the second end of the third capacitor is connected with the first end of the second microstrip line.
8. The wideband LNA circuit of any one of claims 1 to 7, wherein the amplifying tube comprises an N-channel MOS tube, the gate of the N-channel MOS tube being the first end of the amplifying tube, the drain of the N-channel MOS tube being the second end of the amplifying tube, the source of the N-channel MOS tube being the third end of the amplifying tube; or alternatively, the first and second heat exchangers may be,
the amplifying tube comprises an NPN triode, the base electrode of the NPN triode is the first end of the amplifying tube, the collector electrode of the NPN triode is the second end of the amplifying tube, and the emitter electrode of the NPN triode is the third end of the amplifying tube.
9. A wideband LNA device, characterized in that the device comprises a wideband LNA circuit according to any one of claims 1 to 8, a dielectric substrate and a metal floor;
the wideband LNA circuit is attached to a first surface of the dielectric substrate, and the metal floor is attached to a second surface of the dielectric substrate.
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