CN100488033C - Single slice high-gain low-noise amplifier - Google Patents
Single slice high-gain low-noise amplifier Download PDFInfo
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- CN100488033C CN100488033C CNB2007100924071A CN200710092407A CN100488033C CN 100488033 C CN100488033 C CN 100488033C CN B2007100924071 A CNB2007100924071 A CN B2007100924071A CN 200710092407 A CN200710092407 A CN 200710092407A CN 100488033 C CN100488033 C CN 100488033C
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- noise amplifier
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Abstract
This invention discloses a single-chip high gain and low noise amplifier including: a primary amplifier, a secondary amplifier, a resistance feed-back network, an input match network and an output match network, in which, the amplifier works in the bands of 10MHz-550MHz not needing input and output matches from outside, so the circuit is simple and the volume is small.
Description
(1) technical field
The present invention relates to a kind of low noise amplifier, particularly a kind of single slice high-gain low-noise amplifier, it directly applies to fields such as telecommunications, radio communication.
(2) background technology
Low noise amplifier is the key components in the wireless communications products, and it can be used for the field such as receiving system, radar receiving system, satellite communication receiving system of wireless base station usually.The key parameter of low noise amplifier has noise factor, intermodulation characteristic, power output etc.Whether the integrated design decision in the broadband of low noise amplifier it can be applied in the product neatly.At present, the low noise amplifier device of widespread usage belongs to hybrid circuit and modular circuit, and main implementation is to form by single transistor and peripheral match circuit.Its volume ratio is bigger, and operating temperature range is smaller, can only satisfy the technical grade requirement, can't be applied to military electronics and aerospace electron field.For example, in this frequency range of 50MHz～550MHz, there is corresponding product in external M/A COM Inc., but can only be operated in-40 ℃～85 ℃ the temperature range, can't satisfy military electronics and avionic demand; It adopts single transistor to realize the input and output coupling by outside matching network, and consistency is bad; It is integrated that it carries out secondary by ceramic membrane technology, and heat dispersion is relatively poor, and SM08 is adopted in encapsulation, and volume ratio is bigger, and cost is higher.
The typical structure of monolithic low noise amplifier mainly contains at present: darlington structure and two-stage structure for amplifying.The two-stage amplification circuit diagram as shown in Figure 1.It mainly is made of first order amplifying circuit V1, second level amplifying circuit V2, V3 and resistance-feedback network R1, R2, R3, R4, R5.In order to reduce noise, it the area of first order input transistors V1 must be increased and the resistance of resistance R 1 increases, but the area of transistor V1 and resistance R 1 is increased, and will inevitably cause bandwidth of operation to narrow down, the input impedance matching difficulty.Fig. 2 is the circuit simulation figure of this structure.
(3) summary of the invention
Technical problem to be solved by this invention is to invent a kind of single slice high-gain low-noise amplifier, with overcome mix that temperature range is narrow in the amplifier circuit in low noise, consistency is poor, volume is big and the monolithic low noise amplifier in noise factor with bandwidth, import mate between contradiction, work zone width, the shortcoming of input impedance matching difficulty, when guaranteeing low noise, improve the operating frequency and the input standing wave of monolithic low noise amplifier, make it reach that volume is little, temperature range is wide, the purpose of high conformity.
The present invention solves the problems of the technologies described above the technical scheme of being taked and is that single slice high-gain low-noise amplifier of the present invention contains:
First order amplifying circuit carries out first order processing and amplification to the signal from input IN, comprising:
A bipolar transistor V1, the base stage of bipolar transistor V1 and input IN are of coupled connections, the grounded emitter of bipolar transistor V1;
Second level amplifying circuit will carry out the second level and handle and amplification from the signal of described first order amplifying circuit output, comprising:
Bipolar transistor V2 and bipolar transistor V3, the base stage of bipolar transistor V2 is connected with the collector electrode of described first order amplifying circuit bipolar transistor V1, the emitter of bipolar transistor V2 is connected with the base stage of bipolar transistor V3, the collector electrode of bipolar transistor V2 links to each other with the collector electrode of bipolar transistor V3, and with power supply V
DdAnd output OUT connects;
A resistance-feedback network realizes noise coupling and impedance matching, comprising:
Resistance R 1, R2, R3, R4, R5, resistance R 1 one ends connect the base stage of described first order amplifying circuit bipolar transistor V1, its other end is connected through the emitter of resistance R 2 with described second level amplifying circuit bipolar transistor V2, be connected through the emitter of resistance R 3 with bipolar transistor V3, resistance R 4 one ends are connected with the emitter of bipolar transistor V3, its other end ground connection, resistance R 5 one ends are connected with the collector electrode of bipolar transistor V1, and its other end is connected with the collector electrode of bipolar transistor V2;
An input matching network is realized input impedance matching, comprising:
Capacitor C 3 and resistance R 7, capacitor C 3 one ends are connected with the collector electrode of described first order amplifying circuit bipolar transistor V1, and its other end is through resistance R 7 ground connection;
An output matching network is realized the output impedance coupling, comprising:
Capacitor C 4, C5 and resistance R 8, R9, capacitor C 4 one ends are connected with the collector electrode of described second level amplifying circuit bipolar transistor V3, and its other end is through resistance R 8 ground connection, and capacitor C 5 one ends are connected with the emitter of bipolar transistor V3, and its other end is through resistance R 9 ground connection.
Described bipolar transistor V1, bipolar transistor V2, bipolar transistor V3 are V
CeoBe the high-voltage power bipolar transistor of 6V, described resistance R 1, R2, R3, R4, R5, R7, R8, R9 are the polysilicon negative resistance with negative temperature coefficient.
Beneficial effect:
Mix and the contrast of the low noise amplifier structure of monolithic two-stage structure for amplifying with common, single slice high-gain low-noise amplifier of the present invention has the following advantages:
1. because the present invention by having increased an input matching network, an output matching network, has realized the coupling of resistance and capacitance network.Capacitor C 3 in the input matching network and resistance R 7 have realized input impedance matching and have improved the stability of circuit.Capacitor C 4 in the output matching network and resistance C8 have realized the output impedance coupling and have improved the stability of circuit; Capacitor C 5 in the output matching network and resistance R 9 help the raising of stability and widening of bandwidth.Single slice high-gain low-noise amplifier of the present invention is under identical simulation scenarios, and the input standing wave is more outstanding, and common low noise amplifier emulation input standing wave is for being 2.03 to the maximum, and the emulation input standing wave of low noise amplifier of the present invention is 1.81; Also wideer with Time Bandwidth, common low noise amplifier emulation bandwidth is 720MHz, and the simulation work bandwidth of low noise amplifier of the present invention is 950MHz.
2. low noise amplifier of the present invention is in 10MHz～550MHz frequency band, without any need for outside coupling and optimization, with respect to mixing low noise amplifier, the more miniaturization of its volume; Amplifier circuit in low noise of the present invention can directly be replaced the corresponding product SMA80 of M/A COM Inc..
3. low noise amplifier of the present invention has high-gain (31.5dB), than low-noise factor (2.13dB), high-output power (14dBm), wide operating temperature range (at-55 ℃～125 ℃), thereby the scope of application is very widely arranged at wireless communication field, particularly in the aviation electronics field.
(4) description of drawings
Fig. 1 is common amplifier circuit in low noise figure;
The common amplifier circuit in low noise analogous diagram in Fig. 2 position;
Fig. 3 is the structured flowchart of low noise amplifier of the present invention;
Fig. 4 is the circuit structure diagram of low noise amplifier of the present invention;
Fig. 5 is the circuit simulation figure as a result of low noise amplifier of the present invention;
Fig. 6 is the circuit measured result figure of low noise amplifier of the present invention.
In Fig. 2, Fig. 5 and Fig. 6, (a) be the graph of relation of power gain and frequency, (b) be the graph of relation of input standing wave and frequency, be the graph of relation of output standing wave and frequency (c), (d) be the graph of relation of noise factor and frequency.
(5) embodiment
Summary of the invention in the specification of the present invention is exactly a specific embodiment, here repeated description no longer.Only further specify its operation principle below in conjunction with the accompanying drawings and to the requirement of each component parameters.
Amplifier circuit in low noise block diagram of the present invention as shown in Figure 3, amplifier circuit in low noise of the present invention comprises first order amplifying circuit, second level amplifying circuit, a resistance-feedback network, an input matching network, an output matching network.
Amplifier circuit in low noise structure chart of the present invention as shown in Figure 4.
This circuit mainly comprises two-stage by the amplifier section circuit, signal is realized amplifying the first time of signal by first order grounded emitter amplifier, the Darlington multiple tube of being made up of the bipolar transistor V2 that collects cascode altogether, bipolar transistor V3 by the second level is realized amplifying the second time of signal then, amplifies by two-stage and realizes high power amplification gain.Gain, bandwidth and the noise of resistance R 1 major decision low noise amplifier also provide direct current biasing for first order triode simultaneously.Capacitor C 3 and resistance R 7 realize input impedance matching and improve the stability of circuit.Capacitor C 4 and resistance C8 realize the output impedance coupling and improve the stability of circuit.The effect of resistance R 4 is the raisings for stability that increases circuit and load capacity.Reducing of increase that resistance R 5 helps gaining and bandwidth, resistance R 1 help the increase of low-frequency gain and the reduction of noise factor, and reasonably optimizing R1 value helps widening bandwidth of operation.Capacitor C 5 and resistance R 9 help the increase of bandwidth of operation, and capacitor C 5 and resistance R 9 help the raising of stability and widening of bandwidth.
Utilize Candence software, under the Spectre simulated environment, circuit theory diagrams of the present invention are carried out emulation.The circuit post-layout simulation results exhibit figure of low noise amplifier of the present invention has mainly adopted following steps as shown in Figure 5 in simulation process:
1) the S parameters simulation of circuit is analyzed: by manual optimization, realize power gain 32dB, and input and output standing wave＜2.0, noise factor＜3.0dB, power output is greater than 12.5dBm, K〉1;
2) the S parameter of domain post-simulation is analyzed: by post-simulation and manually optimization, realize power gain 31dB, input and output standing wave＜2.0, noise factor＜3.0dB, power output〉12.5dBm, K〉1.
The circuit measured result figure of low noise amplifier of the present invention as shown in Figure 6.Measured result: working temperature is under-55 ℃～125 ℃ conditions, and gaining is 29dB, input and output standing wave＜2.0, noise factor＜3.0dB, power output〉12.5dBm, K〉1 o'clock working band be greater than 550MHz.
The layout size of low noise amplifier of the present invention is 0.35mm * 0.35mm, and area is less.
Low noise amplifier of the present invention adopts 0.35 μ m SiGe BiCMOS technology manufacturing.
Described bipolar transistor V1, bipolar transistor V2, bipolar transistor V3 are V
CeoBe the high-voltage power bipolar transistor of 6V, described resistance R 1, R2, R3, R4, R5, R7 are the polysilicon negative resistance with negative temperature coefficient.Their parameter is respectively: resistance R 1=800 Ω, R2=150 Ω, R3=150 Ω, R4=14 Ω, R5=500 Ω, R7=10 Ω, R8=15 Ω, R9=10 Ω, capacitor C 3=1pF, C4=1pF, C5=2pF.
Claims (2)
1. a single slice high-gain low-noise amplifier is characterized in that, this low noise amplifier contains:
First order amplifying circuit carries out first order processing and amplification to the signal from input IN, comprising:
A bipolar transistor V1, the base stage of bipolar transistor V1 and input IN are of coupled connections, the grounded emitter of bipolar transistor V1;
Second level amplifying circuit will carry out the second level and handle and amplification from the signal of described first order amplifying circuit output, comprising:
Bipolar transistor V2 and bipolar transistor V3, the base stage of bipolar transistor V2 is connected with the collector electrode of described first order amplifying circuit bipolar transistor V1, the emitter of bipolar transistor V2 is connected with the base stage of bipolar transistor V3, the collector electrode of bipolar transistor V2 links to each other with the collector electrode of bipolar transistor V3, and with power supply V
DdAnd output OUT connects;
A resistance-feedback network realizes noise coupling and impedance matching, comprising:
Resistance R 1, R2, R3, R4, R5, resistance R 1 one ends connect the base stage of described first order amplifying circuit bipolar transistor V1, its other end is connected through the emitter of resistance R 2 with described second level amplifying circuit bipolar transistor V2, be connected through the emitter of resistance R 3 with bipolar transistor V3, resistance R 4 one ends are connected with the emitter of bipolar transistor V3, its other end ground connection, resistance R 5 one ends are connected with the collector electrode of bipolar transistor V1, and its other end is connected with the collector electrode of bipolar transistor V2;
An input matching network is realized input impedance matching, comprising:
Capacitor C 3 and resistance R 7, capacitor C 3 one ends are connected with the collector electrode of described first order amplifying circuit bipolar transistor V1, and its other end is through resistance R 7 ground connection;
An output matching network is realized the output impedance coupling, comprising:
Capacitor C 4, C5 and resistance R 8, R9, capacitor C 4 one ends are connected with the collector electrode of described second level amplifying circuit bipolar transistor V3, and its other end is through resistance R 8 ground connection, and capacitor C 5 one ends are connected with the emitter of bipolar transistor V3, and its other end is through resistance R 9 ground connection.
2. low noise amplifier according to claim 1 is characterized in that described bipolar transistor V1, bipolar transistor V2, bipolar transistor V3 are V
CeoBe the high-voltage power bipolar transistor of 6V, described resistance R 1, R2, R3, R4, R5, R7, R8, R9 are the polysilicon negative resistance with negative temperature coefficient.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CNB2007100924071A CN100488033C (en) | 2007-07-11 | 2007-07-11 | Single slice high-gain low-noise amplifier |
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| CNB2007100924071A CN100488033C (en) | 2007-07-11 | 2007-07-11 | Single slice high-gain low-noise amplifier |
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| CN100488033C true CN100488033C (en) | 2009-05-13 |
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Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101997489A (en) * | 2010-10-15 | 2011-03-30 | 中兴通讯股份有限公司 | Amplifier and implementation method thereof |
| CN103117711B (en) * | 2013-01-29 | 2015-05-20 | 天津大学 | Monolithic integrated radio frequency high-gain low-noise amplifier |
| CN103117712B (en) * | 2013-01-29 | 2015-06-24 | 天津大学 | Complementary metal-oxide-semiconductor (CMOS) high gain broad band low noise amplifier |
| CN103327282A (en) * | 2013-07-22 | 2013-09-25 | 苏州硅智源微电子有限公司 | Method for increasing non-operating-state output impedance of amplifier |
| CN104506145B (en) * | 2014-12-23 | 2017-11-03 | 福建星网视易信息系统有限公司 | The small signal amplification circuit and its implementation of a kind of low noise |
| CN106849916A (en) * | 2017-03-03 | 2017-06-13 | 南京邮电大学 | A kind of ultra-wideband pulse produces circuit |
| CN107592081A (en) * | 2017-09-08 | 2018-01-16 | 中国科学技术大学 | A kind of ultra wide band monolithic microwave integrated low-noise amplifier |
| CN113054915B (en) * | 2021-04-14 | 2022-04-12 | 广东工业大学 | Temperature compensation bias circuit applied to radio frequency power amplifier |
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