CN109274368A - A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator - Google Patents
A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator Download PDFInfo
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- H—ELECTRICITY
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- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
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- H—ELECTRICITY
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- H03L7/00—Automatic control of frequency or phase; Synchronisation
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Abstract
The invention discloses a kind of broad tuning Low phase noise micro-strip voltage controlled oscillators, and resonant network and output matching network are all connected to negative resistance network；Negative resistance network includes super-low noise field-effect tube M and feedback network, and resonant network is connected to the grid of super-low noise field-effect tube M, and output matching network is connected to the drain electrode of super-low noise field-effect tube M；One end of feedback network is connected to the source electrode of super-low noise field-effect tube M, other end ground connection；Feedback network makes the grid of super-low noise field-effect tube M obtain negative impedance, and the drain electrode of super-low noise field-effect tube M is made to obtain high-output power.A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator of the present invention proposes a kind of broad tuning Low phase noise Microstrip Oscillator by rationally designing to transistor output matching network structure by the way that above-mentioned device is arranged.The oscillator that this design concept is realized not only solve presently, there are the problem of, and its is compact-sized, low in cost and be easily achieved, great to the research significance of VCO.
Description
Technical field
The present invention relates to electronic information technical fields, and in particular to a kind of broad tuning Low phase noise micro-strip voltage controlled oscillator.
Background technique
Various communication systems are higher and higher to the phase noise requirements of frequency synthesizer now.Phase noise is information transmission
The important parameter of q&r.Voltage controlled oscillator (VCO) is a nucleus module in RF transceiver, frequency synthesizer
Phase noise mainly determine that thus the design of high-performance voltage controlled oscillator becomes very crucial by VCO.
Divide from circuit structure, there are two main classes for voltage controlled oscillator: loop oscillator and LC oscillator.Loop oscillator energy
Big tuning range is obtained, is easily integrated, but its phase noise performance is not so good as LC oscillator.In LC oscillator, Ke Yitong
It crosses using capacitance ratio Cmax/CminBig MOS varactor obtains wide tuning range.Simultaneously as Q value is very high, so also can
The phase noise obtained.However, in practical applications, the phase noise of system and the sensitivity (K of voltage controlled oscillatorVCO) have
It closes.Because the noise of prime module is applied directly to the input terminal of voltage controlled oscillator in frequency synthesizer.Therefore actual voltage-controlled
Oscillator is in the case where obtaining big tuning range, it is necessary to minimize the sensitivity of voltage controlled oscillator.In addition, influencing LC pressure
Control the principal element of oscillator phase also: tail current source, the amplitude of the Q value of on-chip inductor and output signal and symmetrical
Property.
In LC voltage controlled oscillator, generallys use active device and generate negative conductance (- Gm) compensate integrated inductor and variable
The ohmic loss of capacitor, as shown in Figure 1.G in Fig. 1tankIt indicates the ohmic loss as caused by inductance and capacitor, works as active device
When being enough to compensate ohmic loss, i.e. Gactive≥GtankWhen, LC voltage controlled oscillator is able to maintain that oscillation.
In traditional voltage controlled oscillator, phase noise, RC voltage controlled oscillator and LC voltage controlled oscillation can be divided mainly into
Device.Phase noise (VCXO) is mainly made of quartz resonator, varactor and oscillating circuit, its working principle is that
Change the capacitor of varactor by control voltage, thus the frequency of " traction " quartz resonator, to reach frequency modulation(PFM)
Purpose.VCXO is mostly used for the purpose of Phase Lock Technique, frequency negative-feedback modulation；RC voltage controlled oscillator is mostly used in single-chip integration electricity
Lu Zhong；LC voltage controlled oscillator is usually to use varactor C and inductance L, the LC resonance circuit being connected into.Improve varactor
Reverse bias, the vague and general area in diode can increase, as soon as the distance of two conductor surfaces is elongated, capacitor is reduced, this lc circuit
Resonance frequency, will be enhanced.Conversely, the capacitor in diode becomes larger, and frequency will reduce when reducing reverse bias.It is brilliant
The frequency stability of body voltage controlled oscillator is high, but tuning range is narrow；The frequency stability of RC voltage controlled oscillator is low and tuning range
Width, LC voltage controlled oscillator occupy between the two.
Studies have shown that the Q value due to LC resonance chamber is very high, thus the phase noise of such VCO is very low, thus often
For requiring in low-down frequency synthesizer frequency jitter.And the working frequency of this structure and inductance L and capacitor C
It is related, pass through and reduces inductance or capacitor and reducing the parasitic capacitance of circuit can make circuit work in very high working frequency
Under.
Based on described above, present invention selection LC voltage controlled oscillator, a broad tuning vibration based on planar structure is devised
Swing device.The design willOpen-circuit line, which is used as, exports matched mode,Open-circuit line is equivalent at second harmonic frequencyOpen-circuit line,
A bandpass filter over the ground is also corresponded to, thus second harmonic can be restrained effectively；Transistor is anti-using common source series connection
Topological structure is presented, so that obtaining negative impedance at grid, high-output power is obtained at drain electrode.This design is so that the oscillator
Obtain wider tuning range.In conclusion the design circuit is simply easily realized, and design process substantially reduces circuit ruler
Very little, this meets the design philosophy of miniaturization.
Summary of the invention
The technical problem to be solved by the present invention is to VCO frequency stability in the prior art is low, tuning range it is narrow and
Circuit complexity is not easy to realize, and it is an object of the present invention to provide a kind of broad tuning Low phase noise micro-strip voltage controlled oscillator, solves the above problems.
The present invention is achieved through the following technical solutions:
A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator, including resonant network, negative resistance network and output matching network；Institute
It states resonant network and output matching network is all connected to negative resistance network；The negative resistance network includes super-low noise field-effect tube M and anti-
Network is presented, the resonant network is connected to the grid of super-low noise field-effect tube M, and the output matching network is connected to super-low noise field
The drain electrode of effect pipe M；One end of the feedback network is connected to the source electrode of super-low noise field-effect tube M, other end ground connection；Feedback net
Network makes the grid of super-low noise field-effect tube M obtain negative impedance, and the drain electrode of super-low noise field-effect tube M is made to obtain high output work
Rate.
In the prior art, VCO frequency stability is low, and tuning range is narrow and circuit is complicated is not easy to realize.Application of the present invention
When, select low noise transistor to generate negative resistance, the minimal noise value of the transistor is 0.35dB in 1GHz.Therefore it is suitable for
The design of high efficiency low phase noise oscillator.Transistor uses common source serial Feedback topological structure, and negative resistance is obtained at grid
It is anti-, high-output power, specific principle detailed in Example are obtained at drain electrode.The present invention is by being arranged above-mentioned device, by right
Transistor output matching network structure is rationally designed, and a kind of broad tuning Low phase noise Microstrip Oscillator is proposed.This design
The oscillator that theory is realized not only solve presently, there are the problem of, and its is compact-sized, low in cost and be easily achieved,
It is great to the research significance of VCO.
Further, the feedback network includes microstrip line R3 and microstrip line R4；A termination of the microstrip line R3 is ultralow
The source electrode of field-effect tube of making an uproar M, the other end are open circuit；The source electrode of a termination super-low noise field-effect tube M of the microstrip line R4, it is another
End is grounded by impedance Z 2.
The present invention passes through this in application, microstrip line R3 and microstrip line R4 are the equal of having carried out serial Feedback topology design
Kind serial Feedback topology design, increases to expected operating frequency range for the negative impedance of grid, obtains broader tuning range.
Further, the resonant network include microstrip line R1, microstrip line R2, varactor D, biasing networks Q1 and partially
Set network Q2；The microstrip line R1, varactor D and microstrip line R2 are sequentially connected in series, and microstrip line R2 is far from varactor D
One termination super-low noise field-effect tube M grid；The microstrip line R1 is grounded by impedance Z 1；One end of the biasing networks Q1
It is connected to microstrip line R1, another termination tuning voltage；One end of the biasing networks Q2 is connected to microstrip line R2, and another termination is negative
Voltage.
The present invention is in application, biasing networks are used to filter the modulation of any unwanted signal or noise note from power supply
Enter, and in the design of the voltage controlled oscillator of variod tuning, tuning range is usually by variod tuning ability
Limitation.Wide-band tuning range can be by using the transfiguration with high capacitance ratio (ratio of maximum capacity value and the minimum capacitance value)
Diode obtains.In this secondary design, tuning is provided by GaAs Hyperabrupt varactor, meets high capacitance ratio
Index.The varactor is since series resistance is low, so having lower position of minimum capacitance (0.178pF) and high capacity ratio
(6.904) and high Q factor.These factors make super mutation gallium arsenide diode become a kind of good selection, are mentioned with obtaining
The wide-band tuning range of design out.
Further, the output matching network includes microstrip line R5, microstrip line R6, microstrip line R7, biasing networks Q3, electricity
Hold CblockWith SMA connecting line；The microstrip line R5, microstrip line R7, capacitor CblockIt is sequentially connected with SMA connecting line, and microstrip line
R5 is connected to the drain electrode of super-low noise field-effect tube M far from one end of microstrip line R7；The SMA connecting line is connected to output end；Institute
The one end for stating microstrip line R6 is connected to microstrip line R7 far from capacitor CblockOne end, microstrip line R6 the other end open circuit；It is described inclined
The one end for setting network Q3 is connected to microstrip line R7 far from capacitor CblockOne end, another termination positive voltage of biasing networks Q3.
The present invention is in application, biasing networks are used to filter the modulation of any unwanted signal or noise note from power supply
Enter, microstrip line R5, microstrip line R6, microstrip line R7 offer matching impedance, and capacitor CblockFor preventing by the small of supply voltage
Unnecessary output-power fluctuation caused by changing and frequency departure.
Further, the biasing networks include concatenated quatrter-wavelength line and radial stub；The radial direction is short
Transversal connects power supply.
Further, the microstrip line R6 is 1/8 wavelength open line.
The present invention is in application, be utilized capacitor CblockSelf-resonance near fundamental frequency is to make fundamental frequency almost can be loss-free
Pass through, and be higher than capacitor self-resonant frequency when, the parasitic inductance of the capacitor plays a major role, impedance with the increase of frequency and
Increase, so that its impedance is larger at second harmonic, to strengthen second harmonic inhibition.Namely 1/8 wavelength open line exists
It is equivalent to 1/4 wavelength open line at second harmonic frequency, also corresponds to a bandpass filter over the ground, thus can effectively press down
Second harmonic is made.
Further, the super-low noise field-effect tube M is 0.35dB in the minimal noise value of 1GHz.
Compared with prior art, the present invention having the following advantages and benefits:
A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator of the present invention, by the way that above-mentioned device is arranged, by defeated to transistor
Matching network structure is rationally designed out, proposes a kind of broad tuning Low phase noise Microstrip Oscillator.This design concept institute is real
Existing oscillator not only solve presently, there are the problem of, and its is compact-sized, low in cost and be easily achieved, to VCO's
Research significance is great.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention.In the accompanying drawings:
Fig. 1 is LC voltage controlled oscillator model schematic in the prior art；
Fig. 2 is schematic structural view of the invention；
Fig. 3 is schematic diagram of the embodiment of the present invention；
Fig. 4 is schematic diagram of the embodiment of the present invention；
Fig. 5 is schematic diagram of the embodiment of the present invention；
Fig. 6 is schematic diagram of the embodiment of the present invention；
Fig. 7 is schematic diagram of the embodiment of the present invention；
Fig. 8 is schematic diagram of the embodiment of the present invention；
Fig. 9 is schematic diagram of the embodiment of the present invention；
Figure 10 is schematic diagram of the embodiment of the present invention；
Figure 11 is schematic diagram of the embodiment of the present invention.
Specific embodiment
To make the objectives, technical solutions, and advantages of the present invention clearer, below with reference to embodiment and attached drawing, to this
Invention is described in further detail, and exemplary embodiment of the invention and its explanation for explaining only the invention, are not made
For limitation of the invention.
Embodiment
As shown in Fig. 2, a kind of broad tuning Low phase noise micro-strip voltage controlled oscillator of the present invention, including resonant network, negative resistance network
And output matching network；The resonant network and output matching network are all connected to negative resistance network；The negative resistance network includes super
Low noise field-effect tube M and feedback network, the resonant network are connected to the grid of super-low noise field-effect tube M, the output matching
It is connected to the network in the drain electrode of super-low noise field-effect tube M；One end of the feedback network is connected to the source of super-low noise field-effect tube M
Pole, other end ground connection；Feedback network makes the grid of super-low noise field-effect tube M obtain negative impedance, and makes super-low noise field-effect
The drain electrode of pipe M obtains high-output power.
When the present embodiment is implemented, low noise transistor is selected to generate negative resistance, the minimal noise value of the transistor is in 1GHz
When be 0.35dB.Therefore it is suitable for the design of high efficiency low phase noise oscillator.Transistor is using common source serial Feedback topology
Structure obtains negative impedance at grid, and high-output power, specific principle detailed in Example are obtained at drain electrode.The present invention is logical
It crosses and above-mentioned device is set, by rationally designing to transistor output matching network structure, propose a kind of low phase of broad tuning
It makes an uproar Microstrip Oscillator.The oscillator that this design concept is realized not only solve presently, there are the problem of, and its structure is tight
It gathers, is low in cost and be easily achieved, it is great to the research significance of VCO.
The principle of technical effect of the invention is described below:
In the present invention, the design of oscillator is based on negative impedance method.After determining the design objective of oscillator, first
It is exactly the varactor and transistor for determining that design is used.Then negative resistance oscillator circuits are determined, using common source serial Feedback
Topological structure, will be designed after circuit match, to construct new match circuit.Artificial debugging finally is carried out to it
To reach design objective.
Carry out resonant network design when, variod tuning voltage controlled oscillator design in, tuning range usually by
To the limitation of variod tuning ability.Wide-band tuning range can by using with high capacitance ratio (maximum capacity value with
The ratio of the minimum capacitance value) varactor obtain.In this secondary design, pass through GaAs Hyperabrupt varactor
Tuning is provided, meets high capacitance and compares index.
As shown in figure 3, Fig. 3 is the relation curve of varactor capacitance and bias voltage, Fig. 3 shows transfiguration capacitor CVWith
The variation of varactor bias voltage.From zero-bias voltage (COV) arrive diode breakdown voltage (CVB), CVMonotonic decreasing.It is wherein electric
Holding than γ is
The varactor is since series resistance is low, so having lower position of minimum capacitance (0.178pF) and high electricity
Hold than (6.904) and high Q factor.These factors make super mutation gallium arsenide diode become a kind of good selection, to obtain
The wide-band tuning range of the design proposed.In addition, the high Q factor of the varactor is suitable for low phase noise performance
VCO。
In the design of resonant network, it is therefore an objective to keep the reality of input impedance in the required operating frequency range of 7-9GHz
Portion is as small as possible, because the required negative impedance that transistor generates is limited in required operating frequency range.It is also expected to input impedance
The imaginary part of symbol switching it is as fast as possible, to increase the Q factor of resonant network.
The determination of transistor is an important and crucial step in oscillator design.Most important oscillator specifications, such as
Output power levels and phase noise performance are directly related to the performance of transistor.Modified Lieeson equation can from (2)
To find out, the noise coefficient value of transistor answer it is as small as possible, to obtain good phase noise performance.Mixing or heterojunction field effect
Answering transistor (HJ FET) is the noise-figure performance preferably as its improvement.
Wherein, l (fm) it is phase noise (dBc/Hz), QLIt is the load Q, Q of tuning circuit0It is the unloading of tuning circuit, fm
It is the frequency shift (FS) with carrier wave (Hz), f0It is centre frequency (Hz), fcIt is flicker frequency (Hz), T is operating temperature (° K), Ps,av
It is the mean power (W) of oscillator output, F is the noise factor of active device, and R is the equivalent noise resistance of tuning diode,
KoIt is VCO modulation sensitivity (Hz/V), K is Boltzman constant (J/ ° of K).
Super-low noise field-effect tube is selected in design.This transistor is in 1GHz (ID=10mA) minimal noise value be
0.35dB.The transistor of design uses 50 times of source resistance (ID=10mA and VDD=2.5V) carry out automatic biasing.Using
Rogers3003(εr=3.0 ± 0.04, Tand=0.0013) it is designed with a thickness of 0.762mm substrate.
In our current research, the design of oscillator is based on negative impedance method.Since designed VCO needs to show a wide tune
Humorous range, therefore maximum challenge is to obtain a negative resistance in wide-band tuning range in this design.Using shown in Fig. 4
Common source serial Feedback topological structure, obtains negative impedance in grid, obtains high-output power in drain electrode.Devise a serial Feedback
The negative impedance of grid end is increased to expected operating frequency range 7-9GHz by structure.
If meeting oscillating condition in transistor input terminal, oscillation can see in the output end of transistor.For reality
Now self-holding persistent oscillation devises the laod network for meeting transistor input oscillating condition.Must provide the following conditions (3)-(5) with
Guarantee oscillation in desired frequency:
RIN(f0)+RT(f0)<0 (4)
XIN(f0)+XT(f0)=0 (5)
Wherein RINThe real part of input impedance, R are inputted for transistorTFor the real part for determining frequency circuit input impedance, XINFor
The imaginary part of transistor input impedance, XTFor the imaginary part for determining frequency circuit input impedance.In order to provide given oscillating condition
(3)-(5), frequency of use determine that the variable tuning voltage of the impedance value and 0-20V of network (ZT) in 7-9ghz frequency range comes
Input impedance value needed for determining transistor.Transistor required input reflection coefficient is represented by (6), (7):
Using formula (7), load reflection coefficient can be expressed as formula (8), then using the input for the transistor being calculated
Reflection coefficient (7-9GHz frequency range), calculates required load reflection coefficient from formula (8).S in formula (7) and formula (8)
Parameter belongs to the transistor with serial Feedback structure；S parameter is the grid and leakage from the transistor with serial Feedback structure
It extremely obtains, serial Feedback structure is connected to the source terminal of transistor.Then 50 Ω characteristics of microstrip line are calculated using formula (9)
Input impedance value needed for the laod network of impedance and 7-9GHz frequency range:
After computational load network input impedance value required between 8-9Ghz, 1/8 operation wavelength open-circuit line is used to hinder
Anti- matching network provides the input impedance value of laod network.Finally, by impedance network, the transistor with serial Feedback and loaded webs
Network is combined into a circuit.Biasing networks include quatrter-wavelength line and radial stub, for filtering appointing from power supply
What unwanted signal modulation or noise injection；Dc bypass capacitor is for preventing as caused by the minor change of supply voltage not
Necessary output-power fluctuation and frequency departure.
In broad tuning Voltage-Controlled oscillation circuit, to the analysis of oscillator in addition to feedback analysis method can be used, can also it adopt
With negative resistance analytic approach.If Fig. 5 is typical dual-port transistor oscillator circuit model.In transistor negative resistance oscillator, I
Usually using positive feedback make common source or altogether grid transistor work in range of instability, the suitable terminal network Γ of reselectionT,
So that the negative resistance entered in terms of transistor input is larger.Assuming that the impedance Z that transistor input is seen intoinAre as follows:
Zin=Rin+jXin (10)
Resonant network impedance ZLAre as follows:
ZL=RL+jXL (11)
Wherein RinFor transistor input impedance ZinThe real part for being, XinFor ZinImaginary part, RLFor resonant network impedance ZLReality
Portion is resonant network impedance ZLImaginary part.
Then in practical application, usually choosing the impedance Z of resonant networkLIt should meet:
RL=-Rin/3 (12)
XL=-Xin (13)
Oscillation will be also generated when oscillation generates between resonant network and transistor, while in output matching network.
It is illustrated in figure 2 negative resistance oscillator schematic diagram, selects low noise transistor to generate negative resistance, the minimum of the transistor
Noise figure is 0.35dB in 1GHz.Therefore it is suitable for the design of high efficiency low phase noise oscillator.Transistor uses common source
Serial Feedback topological structure obtains negative impedance at grid, and high-output power is obtained at drain electrode.1/8 work of output end load
The matching way of wavelength open line carries out inhibition second harmonic.
According to formula (10)-formula (13), it can derive that the impedance of resonant network should meet:
ZL=-Rin/3-jXin (14)
Oscillating circuit shown in Fig. 2 is analyzed using harmonic wave equilibrium method, result is as shown in Figure 6 and Figure 7.Wherein, Fig. 6
It is not plus 1/8th wavelength open lines are its analogous diagrams, simulated oscillating frequency 8.51GHz, output power -0.13dBm, two
Subharmonic degree of suppression is 20.14dBc.Fig. 7 is the matching way of 1/8th wavelength open line of load, and simulated oscillating frequency is
8.52GHz, output power 7.14dBm, second harmonic degree of suppression are 41.71dBc.Two figures are compared it is found that 1/8th waves of load
Long open-circuit line can effectively inhibit second harmonic.
As shown in figure 8, analyzing known to the matching principle figure: here with capacitor CblockSelf-resonance near fundamental frequency,
It is that pass through fundamental frequency can almost loss-free, and when being higher than the self-resonant frequency of capacitor, the parasitic inductance of the capacitor plays main make
With impedance increases with the increase of frequency, so that its impedance is larger at second harmonic, to strengthen second harmonic suppression
System.I.e.Open-circuit line is equivalent at second harmonic frequencyOpen-circuit line also corresponds to a bandpass filter over the ground, thus
Second harmonic can be restrained effectively.
As shown in Figure 9 and Figure 10, Fig. 9 is the linear diagram of VCO, and Figure 10 is the output power curve figure of VCO, oscillator
Frequency can be transferred to 9.12GHz from 7.98GHz, voltage tuning range 1-15V, the variation range of power is 4.52dBm-
7.14dBm.In VCO output power curve figure shown in Fig. 9, tuning voltage 1V to 8V, the variation of output power presents linear；
After 8V, output power is almost unchanged.It is the output curve diagram of the oscillator phase as shown in figure 11.The oscillator phase
Position noise is -114.829dBc/Hz in the noise figure that 100KHz is deviated, and is -134.831dBc/ in the noise figure of 1MHz offset
Hz。
In conclusion designing a kind of voltage controlled oscillator with broad tuning range.Oscillator is in planar printed circuit board
Upper production.Through emulation measure the voltage controlled oscillator centre frequency be 8.5GHz, output power 4.52dBm-7.14dBm, can
Obtain the tuning bandwidth of 1120MHz.The oscillator phase of design is -114.829dBc/ in the noise figure that 100KHz is deviated
Hz is -134.831dBc/Hz in the noise figure of 1MHz offset.
Above-described specific embodiment has carried out further the purpose of the present invention, technical scheme and beneficial effects
It is described in detail, it should be understood that being not intended to limit the present invention the foregoing is merely a specific embodiment of the invention
Protection scope, all within the spirits and principles of the present invention, any modification, equivalent substitution, improvement and etc. done should all include
Within protection scope of the present invention.
Claims (7)
1. a kind of broad tuning Low phase noise micro-strip voltage controlled oscillator, which is characterized in that including resonant network, negative resistance network and output
Distribution network；The resonant network and output matching network are all connected to negative resistance network；
The negative resistance network includes super-low noise field-effect tube M and feedback network, and the resonant network is connected to super-low noise field-effect
The grid of pipe M, the output matching network are connected to the drain electrode of super-low noise field-effect tube M；
One end of the feedback network is connected to the source electrode of super-low noise field-effect tube M, other end ground connection；Feedback network makes ultralow
The grid of field-effect tube of making an uproar M obtains negative impedance, and the drain electrode of super-low noise field-effect tube M is made to obtain high-output power.
2. a kind of broad tuning Low phase noise micro-strip voltage controlled oscillator according to claim 1, which is characterized in that the feedback net
Network includes microstrip line R3 and microstrip line R4；The source electrode of a termination super-low noise field-effect tube M of the microstrip line R3, the other end is to open
Road；The source electrode of a termination super-low noise field-effect tube M of the microstrip line R4, the other end are grounded by impedance Z 2.
3. a kind of broad tuning Low phase noise micro-strip voltage controlled oscillator according to claim 1, which is characterized in that the Resonance Neural Network
Network includes microstrip line R1, microstrip line R2, varactor D, biasing networks Q1 and biasing networks Q2；
The microstrip line R1, varactor D and microstrip line R2 are sequentially connected in series, and microstrip line R2 far from varactor D one
Terminate the grid of super-low noise field-effect tube M；
The microstrip line R1 is grounded by impedance Z 1；One end of the biasing networks Q1 is connected to microstrip line R1, and another termination is adjusted
Humorous voltage；One end of the biasing networks Q2 is connected to microstrip line R2, another termination negative voltage.
4. a kind of broad tuning Low phase noise micro-strip voltage controlled oscillator according to claim 1, which is characterized in that the output
Distribution network includes microstrip line R5, microstrip line R6, microstrip line R7, biasing networks Q3, capacitor CblockWith SMA connecting line；
The microstrip line R5, microstrip line R7, capacitor CblockIt is sequentially connected with SMA connecting line, and microstrip line R5 is far from microstrip line R7
One end be connected to the drain electrode of super-low noise field-effect tube M；The SMA connecting line is connected to output end；
One end of the microstrip line R6 is connected to microstrip line R7 far from capacitor CblockOne end, microstrip line R6 the other end open circuit；
One end of the biasing networks Q3 is connected to microstrip line R7 far from capacitor CblockOne end, another termination of biasing networks Q3
Positive voltage.
5. a kind of broad tuning Low phase noise micro-strip voltage controlled oscillator, feature according to any one of claim 3 and 4 exist
In the biasing networks include concatenated quatrter-wavelength line and radial stub；The radial direction stub connects power supply.
6. a kind of broad tuning Low phase noise micro-strip voltage controlled oscillator according to claim 4, which is characterized in that the microstrip line
It R6, is 1/8 wavelength open line.
7. a kind of broad tuning Low phase noise micro-strip voltage controlled oscillator according to claim 1, which is characterized in that the super-low noise
Minimal noise value of the field-effect tube M in 1GHz is 0.35dB.
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