CN103973228A - C wave band voltage-controlled oscillator - Google Patents
C wave band voltage-controlled oscillator Download PDFInfo
- Publication number
- CN103973228A CN103973228A CN201410157423.4A CN201410157423A CN103973228A CN 103973228 A CN103973228 A CN 103973228A CN 201410157423 A CN201410157423 A CN 201410157423A CN 103973228 A CN103973228 A CN 103973228A
- Authority
- CN
- China
- Prior art keywords
- circuit
- microstrip line
- electric capacity
- controlled oscillator
- power supply
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The invention discloses a C wave band voltage-controlled oscillator. The C wave band voltage-controlled oscillator comprises a load circuit for changing the resonant frequency, a transistor circuit for enabling the whole circuit to oscillate, a terminal circuit for meeting the oscillation condition, a first match circuit and a second match circuit. The load circuit is connected with the transistor circuit through the first match circuit, and the transistor circuit is connected with the terminal circuit through the second match circuit. According to the voltage-controlled oscillator with the center frequency being any frequency point in a C wave band, the circuit is simple in structural design, cost is low, the requirement for the machining precision is not high, high cost performance is achieved, and the C wave band voltage-controlled oscillator has the advantages of being low in phase noise, wide in tuning range, good in linearity, high in output power, stable in in-band power and the like.
Description
Technical field
The present invention relates to a kind of voltage controlled oscillator (voltage-controlled oscillator is called for short VCO), particularly relate to a kind of C-band voltage controlled oscillator, belong to technical field of micro communication.
Background technology
Along with developing rapidly of the communications field, more and more higher to the requirement of electronic equipment, and voltage controlled oscillator is one of very important element in radio-frequency (RF) communication system.Voltage controlled oscillator refers to that output frequency and input control voltage have the oscillating circuit of corresponding relation, and output frequency is the function of applied signal voltage.It is mainly used in phase-locked loop and frequency synthesizer, is used for realizing accurate reference frequency, most important to the performance of communication system.
The unit of research both at home and abroad at present and production Integrated VCO VCO is numerous, external manufacturer mainly contains Crystek Corporation, RF Micro Devices Inc etc., the VCO superior performance of its production, but price is also higher, as the CVCO55BH-4100-4300 of Crystek Corporation, frequency range 4100 ~ 4300MHz, phase noise-113dBc/Hz@100kHz, at least 30 dollars of wholesale prices.From domestic representative R&D institution, as the document that Chinese Academy of Sciences Microelectronics Institute, Fudan University's application-specific integrated circuit (ASIC) and system National Key Laboratory, Southeast China University's radio frequency and optoelectronic IC research institute etc. deliver can be found out, the CMOS technique that adopts 0.18 μ m in the domestic design at C-band VCO and realization more, at often can the reach-110dBc/Hz of phase noise at 1MHz frequency deviation place, what performance was higher can reach-below 120dBc/Hz, but same existence designed the complicated problem higher with cost, and cost performance is not high.
Summary of the invention
Technical problem to be solved by this invention is: provide a kind of circuit structure simple, cost is lower, not high to requirement on machining accuracy, has the C-band voltage controlled oscillator of higher cost performance.
The present invention is for solving the problems of the technologies described above by the following technical solutions:
A kind of C-band voltage controlled oscillator, comprise load circuit for changing resonance frequency, for making the transistor circuit of whole circuit oscillation, for meeting terminating circuit and first, second match circuit of oscillating condition, described load circuit connects described transistor circuit through described the first match circuit, and described transistor circuit connects described terminating circuit through described the second match circuit, described transistor circuit comprises transistor, first ~ eight electric capacity, the first ~ the second resistance, first ~ three microstrip line, the first ~ the second microstrip stubs, the first ~ the second DC power supply, one end concurrent of one end of described the first electric capacity, transistorized drain electrode and the first microstrip line is connected, one end concurrent of the other end, the first microstrip stubs and first resistance of the first microstrip line is connected, the other end of the first resistance connects the positive pole of the first DC power supply, and the 6th, the 7th, the 8th electric capacity is connected in parallel on respectively the positive and negative end of the first DC power supply, transistorized grid is through the second microstrip line ground connection, the second electric capacity, transistorized source electrode and one end concurrent of the 3rd microstrip line are connected, one end concurrent of the other end, the second microstrip stubs and second resistance of the 3rd microstrip line is connected, the other end of the second resistance connects the positive pole of the second DC power supply, and the 3rd, the 4th, the 5th electric capacity is connected in parallel on respectively the positive and negative end of the second DC power supply, the equal ground connection of negative pole of first, second DC power supply, described load circuit comprises the first ~ the second variable capacitance diode, the the 9th ~ the 12 electric capacity, the four ~ six microstrip line, the 3rd microstrip stubs, the 3rd DC power supply, one end of described the 9th electric capacity, the negative electrode of the first variable capacitance diode, the negative electrode of the second variable capacitance diode is connected with one end concurrent of the 4th microstrip line, the other end of the 4th microstrip line, the 3rd microstrip stubs is connected with the anodal concurrent of the 3rd DC power supply, the tenth, the 11, the 12 electric capacity is connected in parallel on respectively the positive and negative end of the 3rd DC power supply, the anode of the first variable capacitance diode is through the 5th microstrip line ground connection, the anode of the second variable capacitance diode is through the 6th microstrip line ground connection, the minus earth of the 3rd DC power supply.
Further, described terminating circuit comprises that a size is the resistance of 50 Ω.
Further, three port connectors that described the first match circuit comprises the 7th microstrip line, the ground connection oscillator port being connected with the 9th electric capacity other end, the other end that makes the 7th microstrip line, the first electric capacity and ground connection oscillator port concurrent connect.
Further, described the second match circuit comprises the 8th microstrip line being connected with described the second electric capacity.
Preferably, described transistor is BFP640-NPN type SiGe type RF transistor.
Preferably, described variable capacitance diode is the super sudden change of SMV2019-079 silicon junction varactor.
The present invention adopts above technical scheme compared with prior art, there is following beneficial effect: can realize centre frequency is the voltage controlled oscillator of any frequency in C-band, and circuit design structure is simple, and cost is lower, not high to requirement on machining accuracy, there is higher cost performance; Also have in addition make an uproar mutually low, tuning range is wide, the linearity good, power output is high, the band features such as internal power is smooth.
Brief description of the drawings
Fig. 1 is the theory diagram of a kind of C-band voltage controlled oscillator of the present invention.
Fig. 2 is the integrated circuit figure of a kind of C-band voltage controlled oscillator of the present invention.
Wherein: C1 ~ C12 is electric capacity, R1, R2, Term1 are resistance, and TL1 ~ TL8 is microstrip line, and Tee1 ~ Tee6 is three port connectors, Stub1 ~ Stub3 is microstrip stubs, Cros1 is four port connectors, and Osc1 is ground connection oscillator port, and SMV2019-1 ~ 2 are variable capacitance diode, X1 is transistor, SRC1 ~ SRC3 is DC power supply, and V1 ~ V3 is micro-circular hole with ground, and Stub1 ~ Stub3 is microstrip stubs.
Fig. 3 is Transient starting of oscillation figure of the present invention.
Fig. 4 is harmonic balance emulation-fm linearity analogous diagram of the present invention.
Fig. 5 is the curve chart that harmonic balance emulation-power output of the present invention changes with output frequency.
Fig. 6 is harmonic balance emulation-each harmonic analogous diagram of the present invention.
Fig. 7 is harmonic balance emulation-phase noise analogous diagram of the present invention.
Embodiment
Describe embodiments of the present invention below in detail, the example of described execution mode is shown in the drawings, and wherein same or similar label represents same or similar element or has the element of identical or similar functions from start to finish.Be exemplary below by the execution mode being described with reference to the drawings, only for explaining the present invention, and can not be interpreted as limitation of the present invention.
As shown in Figure 1, a kind of C-band voltage controlled oscillator comprises load circuit, transistor circuit, terminating circuit and first, second match circuit, load circuit connects transistor circuit through the first match circuit, transistor circuit connects terminating circuit through the second match circuit, the logical superpotential change of load current changes the capacitance of variable capacitance diode, thereby changes frequency; Transistor circuit is mainly, by field effect transistor, voltage control is controlled to whole circuit, determines S parameter by the quiescent point of field effect transistor is set, thereby determines the transistorized coefficient of stability, with the oscillating condition that judges that transistor is satisfied; Terminating circuit major requirement is the voltage reflection coefficient that can make input port | Γ IN|>1, thus reach the condition of vibration.
Be illustrated in figure 2 the integrated circuit figure of a kind of C-band voltage controlled oscillator of the present invention, transistor circuit comprises transistor X1, capacitor C 1 ~ C8, resistance R 1, R2, microstrip line TL1 ~ TL3, three port connector Tee1 ~ Tee4, microstrip stubs Stub1 ~ Stub2, DC power supply SRC1 ~ SRC2, micro-circular hole V1 with ground, C1 connects the drain electrode of transistor X1 through Tee1, the 3rd port of Tee1 is connected one end of R1 with Tee3 through TL1, the other end of R1 connects the positive pole of SRC1, C6, C7, C8 is connected in parallel on respectively the positive and negative end of SRC1, the 3rd port of Tee3 connects Stub1, the grid of transistor X1 is through TL2 and V1 ground connection, the source electrode of transistor X1 connects C2 through Tee2, and the 3rd port of Tee2 is connected one end of R2 with Tee4 through TL3, and the other end of R2 connects the positive pole of SRC2, and C3, C4, C5 are connected in parallel on respectively the positive and negative end of SRC2, and the 3rd port of Tee4 connects Stub2, the equal ground connection of negative pole of SRC1 and SRC2.
Load circuit comprises the first ~ the second variable capacitance diode SMV2019-1 ~ 2, capacitor C 9 ~ C12, microstrip line TL4 ~ TL6, three port connector Tee5, microstrip stubs Stub3, DC power supply SRC3, micro-circular hole V2 ~ V3 with ground, four port connector Cros1, the negative electrode of SMV2019-1 is connected respectively with the negative electrode of SMV2019-2 two ports that Cros1 is relative, the anode of SMV2019-1 is through TL5 and V2 ground connection, and the anode of SMV2019-2 is through TL6 and V3 ground connection; The 3rd port of Cros1 connects C9; The 4th port of Cros1 is connected the positive pole of SRC3 with Tee5 through TL4, C10, C11, C12 are connected in parallel on respectively the positive and negative end of SRC3, and the 3rd port of Tee5 connects Stub3, the minus earth of SRC3.
Terminating circuit is the resistance that connects 50 Ω by one section of quarter-wave high impedance line, and design major requirement can make the voltage reflection coefficient of input port | Γ IN|>1; The ground connection oscillator port Osc1 that the first match circuit comprises the Tee6 being connected with C1, the TL7 being connected with the second port of Tee6, is connected with the 3rd port of Tee6, the other end of Osc1 connects C9; The second match circuit comprises the TL8 being connected with C2.
Choose for transistorized, choose 1/f noise less, can be operated in the RF transistor of low frequency and intermediate frequency zone, and there is low noise feature in the frequency band of work.Based on above-mentioned consideration, the present invention selects the BFP640-NPN type SiGe type RF transistor of Infineon company, and this transistor optimum noise is better than 1dB in 3-5GHz frequency band range, and cut-off frequency has reached 70GHz, meets the requirement as oscillating tube completely.
In addition, choose the super sudden change of the SMV2019-079 silicon junction varactor of SKYWORKS as the variable capacitance diode using in the present invention, this variable capacitance diode series resistance is little, and variable compression ratio is large.Two same variable capacitance diodes have been installed in circuit, form the form of anti-series, in such structure, due to radiofrequency signal, to be added in two voltage directions on variable capacitance diode contrary, so in the time that radiofrequency signal increases the equivalent capacity of a variable capacitance diode, the equivalent capacity of another variable capacitance diode can reduce, thereby can suppress the impact of radiofrequency signal on variable capacitance diode equivalent capacity.
Integrated circuit is connected above-mentioned variod tuning circuit, transistor DC biasing circuit, terminating circuit exactly by the first and second match circuits, microstrip line in circuit is mainly used in mating variod tuning circuit and transistor DC biasing circuit, to meet the starting condition for oscillation of voltage controlled oscillator.In addition,, for choosing of electric capacity, resistance, except meeting withstand voltage and power requirement, also to the effect in circuit select according to them.For the electric capacity of charging resonating device and high frequency channel, select to encapsulate little, the high device of Q value is to reduce the electric capacity of parasitic parameter and loss; For capacitance, consider its loss, can not select also large electric capacity of capacitance lossy, certainly can not select the too small electric capacity of capacitance; For resistance, little encapsulation, resistance and power meet the demands.
As shown in Figure 3, for Transient starting of oscillation figure of the present invention, transverse axis represents time/nanosecond, and the longitudinal axis represents output voltage/volt, and wherein m1 represents in the time that the time was 25.73 nanosecond, output voltage is 1.336 volts, m2 represents that output voltage is 1.332 volts in the time that the time was 38.90 nanosecond, and simulation result shows, this voltage controlled oscillator can stable oscillation stationary vibration, duration of oscillation shorter (being about 6ns).
As shown in Figure 4, for harmonic balance emulation-fm linearity analogous diagram of the present invention, transverse axis represents tuning voltage/volt, the longitudinal axis represents fm linearity/hertz, wherein m1 represents in the time that tuning voltage is 1.000 volts, fm linearity is 4.524GHz, ind Delta represents that m2 is 9.000 volts to the voltage difference of m1, dep Delta represents that m2 is 235.5MHz to the difference on the frequency of m1, dotted lines in figure is fm linearity curve, straight line is to calculate linearity straight line used, it is visible in the time that tuning voltage is 1 ~ 10V, fm linearity is better, calculate fm linearity and be better than 3%.
As shown in Figure 5, for harmonic balance emulation-power output of the present invention is with the curve chart of output frequency variation, transverse axis represents output frequency/hertz, the longitudinal axis represents power output/dBm, wherein m3 represents in the time that output frequency is 4.572GHz, power output is 11.98dBm, m4 represents in the time that output frequency is 4.760GHz, power output is 11.687dBm, simulation result shows, this VCO power output is more than 11.65 dBm, and within the scope of 4.524GHz ~ 4.759GHz, along with the variation of output frequency, the power output of VCO changes and is little, meet the requirement of practical application completely.
As shown in Figure 6, be harmonic balance emulation-each harmonic analogous diagram of the present invention, transverse axis represent harmonic number/time, the longitudinal axis represents power/dBm, wherein m1 represents when harmonic number is 1 time, and power is 11.950 dBm, and simulation result shows that second harmonic is lower than first-harmonic.
As shown in Figure 7, for harmonic balance emulation-phase noise analogous diagram of the present invention, transverse axis represents noise frequency/megahertz, the longitudinal axis represents phase noise/dBc, wherein m2 represents in the time that off center frequency is 100.0kHz, reach-94.51dBc/Hz of phase noise, m3 represents in the time that off center frequency is 1.000MHz, reach-114.7dBc/Hz of phase noise.
Show from Fig. 3 to Fig. 7 simulation result, this VCO centre frequency 4.64GHz phase noise-95.4dBc/Hz of place, in the time that tuning voltage 1-10V changes, frequency range is 235 MHz, and fm linearity is better than 3%, Maximum Power Output can reach 11.65 dBm, and band internal power flatness is ± 0.2 dBm.In sum, a kind of design of C-band voltage controlled oscillator has obtained checking.
Above embodiment only, for explanation technological thought of the present invention, can not limit protection scope of the present invention with this, every technological thought proposing according to the present invention, and any change of doing on technical scheme basis, within all falling into protection range of the present invention.
Claims (7)
1. a C-band voltage controlled oscillator, it is characterized in that: comprise load circuit for changing resonance frequency, for making the transistor circuit of whole circuit oscillation, for meeting terminating circuit and first, second match circuit of oscillating condition, described load circuit connects described transistor circuit through described the first match circuit, and described transistor circuit connects described terminating circuit through described the second match circuit;
Described transistor circuit comprises transistor, first ~ eight electric capacity, the first ~ the second resistance, first ~ three microstrip line, the first ~ the second microstrip stubs, the first ~ the second DC power supply, one end concurrent of one end of described the first electric capacity, transistorized drain electrode and the first microstrip line is connected, one end concurrent of the other end, the first microstrip stubs and first resistance of the first microstrip line is connected, the other end of the first resistance connects the positive pole of the first DC power supply, and the 6th, the 7th, the 8th electric capacity is connected in parallel on respectively the positive and negative end of the first DC power supply; Transistorized grid is through the second microstrip line ground connection; The second electric capacity, transistorized source electrode and one end concurrent of the 3rd microstrip line are connected, one end concurrent of the other end, the second microstrip stubs and second resistance of the 3rd microstrip line is connected, the other end of the second resistance connects the positive pole of the second DC power supply, and the 3rd, the 4th, the 5th electric capacity is connected in parallel on respectively the positive and negative end of the second DC power supply; The equal ground connection of negative pole of first, second DC power supply;
Described load circuit comprises the first ~ the second variable capacitance diode, the the 9th ~ the 12 electric capacity, the four ~ six microstrip line, the 3rd microstrip stubs, the 3rd DC power supply, one end of described the 9th electric capacity, the negative electrode of the first variable capacitance diode, the negative electrode of the second variable capacitance diode is connected with one end concurrent of the 4th microstrip line, the other end of the 4th microstrip line, the 3rd microstrip stubs is connected with the anodal concurrent of the 3rd DC power supply, the tenth, the 11, the 12 electric capacity is connected in parallel on respectively the positive and negative end of the 3rd DC power supply, the anode of the first variable capacitance diode is through the 5th microstrip line ground connection, the anode of the second variable capacitance diode is through the 6th microstrip line ground connection, the minus earth of the 3rd DC power supply.
2. C-band voltage controlled oscillator as claimed in claim 1, is characterized in that: described terminating circuit comprises a resistance.
3. C-band voltage controlled oscillator as claimed in claim 2, is characterized in that: described resistance sizes is 50 Ω.
4. C-band voltage controlled oscillator as described in claim 1-3 any one, is characterized in that: three port connectors that described the first match circuit comprises the 7th microstrip line, the ground connection oscillator port being connected with the 9th electric capacity other end, the other end that makes the 7th microstrip line, the first electric capacity and ground connection oscillator port concurrent connect.
5. C-band voltage controlled oscillator as described in claim 1-3 any one, is characterized in that: described the second match circuit comprises the 8th microstrip line being connected with described the second electric capacity.
6. C-band voltage controlled oscillator as described in claim 1-3 any one, is characterized in that: described transistor is BFP640-NPN type SiGe type RF transistor.
7. C-band voltage controlled oscillator as described in claim 1-3 any one, is characterized in that: described variable capacitance diode is the super sudden change of SMV2019-079 silicon junction varactor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410157423.4A CN103973228B (en) | 2014-04-18 | 2014-04-18 | A kind of C-band voltage controlled oscillator |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410157423.4A CN103973228B (en) | 2014-04-18 | 2014-04-18 | A kind of C-band voltage controlled oscillator |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103973228A true CN103973228A (en) | 2014-08-06 |
| CN103973228B CN103973228B (en) | 2016-08-17 |
Family
ID=51242353
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201410157423.4A Active CN103973228B (en) | 2014-04-18 | 2014-04-18 | A kind of C-band voltage controlled oscillator |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103973228B (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106685360A (en) * | 2017-01-04 | 2017-05-17 | 西南交通大学 | Wideband microwave voltage-controlled oscillator |
| CN109274368A (en) * | 2018-11-14 | 2019-01-25 | 电子科技大学 | A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator |
| CN113595505A (en) * | 2021-06-25 | 2021-11-02 | 西安空间无线电技术研究所 | Anti-interference X-waveband voltage-controlled oscillator |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276103A (en) * | 1997-10-15 | 2000-12-06 | 摩托罗拉公司 | Dual band voltage controlled oscillator |
| JP2002290152A (en) * | 2001-03-28 | 2002-10-04 | Nippon Dempa Kogyo Co Ltd | Voltage-controlled oscillator |
| JP2003218635A (en) * | 2002-01-17 | 2003-07-31 | Sharp Corp | Voltage-controlled oscillator |
| CN101399543A (en) * | 2008-09-19 | 2009-04-01 | 广州逸锋电子科技有限公司 | High frequency voltage controlled oscillator |
| CN203827295U (en) * | 2014-04-18 | 2014-09-10 | 南京信息工程大学 | C-waveband voltage-controlled oscillator |
-
2014
- 2014-04-18 CN CN201410157423.4A patent/CN103973228B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276103A (en) * | 1997-10-15 | 2000-12-06 | 摩托罗拉公司 | Dual band voltage controlled oscillator |
| JP2002290152A (en) * | 2001-03-28 | 2002-10-04 | Nippon Dempa Kogyo Co Ltd | Voltage-controlled oscillator |
| JP2003218635A (en) * | 2002-01-17 | 2003-07-31 | Sharp Corp | Voltage-controlled oscillator |
| CN101399543A (en) * | 2008-09-19 | 2009-04-01 | 广州逸锋电子科技有限公司 | High frequency voltage controlled oscillator |
| CN203827295U (en) * | 2014-04-18 | 2014-09-10 | 南京信息工程大学 | C-waveband voltage-controlled oscillator |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106685360A (en) * | 2017-01-04 | 2017-05-17 | 西南交通大学 | Wideband microwave voltage-controlled oscillator |
| CN109274368A (en) * | 2018-11-14 | 2019-01-25 | 电子科技大学 | A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator |
| CN113595505A (en) * | 2021-06-25 | 2021-11-02 | 西安空间无线电技术研究所 | Anti-interference X-waveband voltage-controlled oscillator |
| CN113595505B (en) * | 2021-06-25 | 2023-08-29 | 西安空间无线电技术研究所 | Anti-interference X-band voltage-controlled oscillator |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103973228B (en) | 2016-08-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US8493105B2 (en) | Injection-locked frequency divider | |
| US7961058B2 (en) | Frequency divider using an injection-locking-range enhancement technique | |
| US20080284534A1 (en) | Oscillator | |
| CN103404032A (en) | Temperature compensation and coarse tune bank switches in a low phase noise VCO | |
| CN201039084Y (en) | Low-amplitude error and low-phase noise RF voltage controlled surge based on capacitance compensation | |
| US7652544B2 (en) | Voltage controlled oscillator and frequency control method of the voltage controlled oscillator | |
| CN108768301A (en) | A kind of LC voltage controlled oscillators of substrate dynamic bias | |
| CN103684424A (en) | Wide locking range type current-mode latched frequency divider based on source degeneration capacitor | |
| CN103973228A (en) | C wave band voltage-controlled oscillator | |
| CN102201785B (en) | Ultra-low power consumption voltage-controlled oscillator circuit and signal processing method thereof | |
| US20120319787A1 (en) | Voltage controlled oscillator having a resonator circuit with a phase noise filter | |
| US9473152B2 (en) | Coupling structure for inductive device | |
| CN205051651U (en) | Voltage controlled oscillator | |
| CN100533982C (en) | Oscillator circuit | |
| CN203827295U (en) | C-waveband voltage-controlled oscillator | |
| CN102739161B (en) | Ring resonator with adjustable broadband frequency | |
| CN104202043A (en) | Quadrature push-push voltage-controlled oscillator based on circle structure | |
| CN105811883A (en) | Silicon-based CMOS (Complementary Metal Oxide Semiconductor) technology adopted Terahertz oscillator | |
| CN109617527A (en) | The adjustable broadband millimeter-wave oscillator of center resonant frequency | |
| CN201550100U (en) | Frequency synthesis system based on varactor diode | |
| EP2826154B1 (en) | Improved local oscillator (lo) driver circuit for a mixer | |
| Chao et al. | A 2.9 mW 53.4–79.4 GHz frequency-tracking injection-locked frequency divider with 39.2% locking range in 65nm CMOS | |
| WO2019127537A1 (en) | Wideband low-phase-noise frequency synthesizer circuit and electronic device | |
| CN103812448A (en) | Frequency mixer | |
| Kawasaki et al. | A phase noise improvement of 19 GHz VCO with use of feedback coupled-line resonator |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191127 Address after: 221300 Jiangsu, Xuzhou, Pizhou high tech Industrial Development Zone West of Taihu Avenue, north of Fu Mei Road. Patentee after: Jiangsu crystal semiconductor Co., Ltd. Address before: Zhongshan road Wuzhong District Mudu town of Suzhou city in Jiangsu province 215101 No. 70 Wuzhong Science Park Building 2 room 2310 Patentee before: Nanjing University of Information Science and Technology |