CN103973228B - A kind of C-band voltage controlled oscillator - Google Patents
A kind of C-band voltage controlled oscillator Download PDFInfo
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- CN103973228B CN103973228B CN201410157423.4A CN201410157423A CN103973228B CN 103973228 B CN103973228 B CN 103973228B CN 201410157423 A CN201410157423 A CN 201410157423A CN 103973228 B CN103973228 B CN 103973228B
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Abstract
The invention discloses a kind of C-band voltage controlled oscillator, including the load circuit for changing resonant frequency, for making the transistor circuit of whole circuit oscillation, for meeting terminating circuit and first, second match circuit of oscillating condition, described load circuit connects described transistor circuit through described first match circuit, and described transistor circuit connects described terminating circuit through described second match circuit.It is the voltage controlled oscillator of any one frequency in C-band that the present invention can realize mid frequency, and circuit design structure is simple, and cost is relatively low, the highest to requirement on machining accuracy, has higher cost performance；The most also there is low, the feature such as tuning range width, the linearity are good, output is high, band internal power is smooth of making an uproar mutually.
Description
Technical field
The present invention relates to a kind of voltage controlled oscillator (voltage-controlled oscillator is called for short VCO), especially
Relate to a kind of C-band voltage controlled oscillator, belong to technical field of micro communication.
Background technology
Along with developing rapidly of the communications field, the requirement to electronic equipment is more and more higher, and voltage controlled oscillator be radio frequency lead to
One of very important element in communication system.Voltage controlled oscillator refers to that output frequency and input control voltage and have corresponding relation
Oscillating circuit, i.e. output frequency is the function of applied signal voltage.It is mainly used in phase-locked loop and frequency synthesizer,
It is used for realizing accurate reference frequency, most important to the performance of communication system.
The unit of research the most both at home and abroad and production Integrated VCO VCO is numerous, and external manufacturer mainly has
Crystek Corporation, RF Micro Devices Inc etc., its VCO superior performance produced, but price is the highest,
Such as the CVCO55BH-4100-4300 of Crystek Corporation, frequency range 4100 ~ 4300MHz, phase noise-
113dBc/Hz@100kHz, wholesale price at least 30 dollars.From domestic representative R&D institution, electricity as micro-in the Chinese Academy of Sciences
Sub-institute, Fudan University's special IC and system National Key Laboratory, Southeast China University's radio frequency and integrated optoelectronic circuit
Document that institute etc. are delivered it can be seen that the domestic design at C-band VCO with realize in the CMOS works using 0.18 μm more
Skill, the phase noise at 1MHz frequency deviation tends to reach-110dBc/Hz, and what performance was higher can reach below-120dBc/Hz,
But equally existing the problem that design is complicated Yu relatively costly, cost performance is the highest.
Summary of the invention
The technical problem to be solved is: providing a kind of circuit structure simple, cost is relatively low, machining accuracy
Ask the highest, there is the C-band voltage controlled oscillator of higher cost performance.
The present invention solves above-mentioned technical problem by the following technical solutions:
A kind of C-band voltage controlled oscillator, including the load circuit for changing resonant frequency, for making whole circuit oscillation
Transistor circuit, for meeting terminating circuit and first, second match circuit of oscillating condition, described load circuit is through institute
Stating the first match circuit and connect described transistor circuit, described transistor circuit connects described terminal through described second match circuit
Circuit；Described transistor circuit include transistor, the first ~ the eight electric capacity, the first ~ the second resistance, the first ~ the three microstrip line,
One ~ the second microstrip stubs, the first ~ the second DC source, described one end of first electric capacity, the drain electrode of transistor and the first micro-strip
One end concurrent of line connects, and one end concurrent of the other end of the first microstrip line, the first microstrip stubs and the first resistance connects, the
The other end of one resistance connects the positive pole of the first DC source, and the six, the seven, the 8th electric capacity are connected in parallel on the first DC source respectively
Positive and negative end；The grid of transistor is through the second microstrip line ground connection；Second electric capacity, the source electrode of transistor and the 3rd microstrip line
One end concurrent connects, and one end concurrent of the other end of the 3rd microstrip line, the second microstrip stubs and the second resistance connects, the second electricity
The other end of resistance connects the positive pole of the second DC source, and the three, the four, the 5th electric capacity are just being connected in parallel on the second DC source respectively
Negative pole two ends；The equal ground connection of negative pole of first, second DC source；Described load circuit include the first ~ the second varactor,
Nine ~ the 12nd electric capacity, the 4th ~ the 6th microstrip line, the 3rd microstrip stubs, the 3rd DC source, one end of described 9th electric capacity,
One end concurrent of the negative electrode of the first varactor, the negative electrode of the second varactor and the 4th microstrip line connects, the 4th micro-strip
The positive pole concurrent of the other end of line, the 3rd microstrip stubs and the 3rd DC source connects, and the ten, the 11st, the 12nd electric capacity
Be connected in parallel on the positive and negative end of the 3rd DC source respectively, the anode of the first varactor through the 5th microstrip line ground connection, second
The anode of varactor is through the 6th microstrip line ground connection, the minus earth of the 3rd DC source.
Further, described terminating circuit includes the resistance that a size is 50 Ω.
Further, described first match circuit includes that the ground connection that the 7th microstrip line and the 9th electric capacity other end connect is shaken
Swing device port, three port connectors making the 7th microstrip line, the other end of the first electric capacity and ground connection oscillator port concurrent connect.
Further, described second match circuit includes the 8th microstrip line being connected with described second electric capacity.
Preferably, described transistor is BFP640-NPN type SiGe type RF transistor.
Preferably, described varactor is SMV2019-079 silicon super sudden change junction varactor.
The present invention uses above technical scheme compared with prior art, has the advantages that and can realize center frequency
Rate is the voltage controlled oscillator of any one frequency in C-band, and circuit design structure is simple, and cost is relatively low, to requirement on machining accuracy not
Height, has higher cost performance；The most also have make an uproar mutually low, tuning range width, the linearity are good, output is high, band internal power
The feature such as smooth.
Accompanying drawing explanation
Fig. 1 is the theory diagram of a kind of C-band voltage controlled oscillator of the present invention.
Fig. 2 is the integrated circuit figure of a kind of C-band voltage controlled oscillator of the present invention.
Wherein: C1 ~ C12 is electric capacity, R1, R2, Term1 are resistance, and TL1 ~ TL8 is microstrip line, and Tee1 ~ Tee6 is three ports
Adapter, Stub1 ~ Stub3 is microstrip stubs, and Cros1 is four port connectors, and Osc1 is ground connection oscillator port,
SMV2019-1 ~ 2 are varactor, and X1 is transistor, and SRC1 ~ SRC3 is DC source, and V1 ~ V3 is micro-strip ground connection circular hole,
Stub1 ~ Stub3 is microstrip stubs.
Fig. 3 is the Transient starting of oscillation figure of the present invention.
Fig. 4 is the harmonic balance emulation-fm linearity analogous diagram of the present invention.
Fig. 5 is the curve chart that the harmonic balance emulation-output of the present invention changes with output frequency.
Fig. 6 is the harmonic balance emulation-each harmonic analogous diagram of the present invention.
Fig. 7 is the harmonic balance emulation-phase noise analogous diagram of the present invention.
Detailed description of the invention
Embodiments of the present invention are described below in detail, and the example of described embodiment is shown in the drawings, the most ad initio
Represent same or similar element to same or similar label eventually or there is the element of same or like function.Below by ginseng
The embodiment examining accompanying drawing description is exemplary, is only used for explaining the present invention, and is not construed as limiting the claims.
As it is shown in figure 1, a kind of C-band voltage controlled oscillator includes load circuit, transistor circuit, terminating circuit and the
One, the second match circuit, load circuit connects transistor circuit through the first match circuit, and transistor circuit is through the second match circuit
Connecting terminating circuit, load current changes the capacitance of varactor by the change of voltage, thus changes frequency；Crystal
If pipe main circuit controls whole circuit by field effect transistor to Control of Voltage, by arranging the quiescent point of field effect transistor
Determine S parameter, so that it is determined that the coefficient of stability of transistor, to judge the oscillating condition that transistor meets；Terminating circuit is main
Requirement | the Γ IN | > 1 that is the voltage reflection coefficient that can make input port, thus reach the condition of vibration.
Being illustrated in figure 2 the integrated circuit figure of a kind of C-band voltage controlled oscillator of the present invention, transistor circuit includes crystal
Pipe X1, electric capacity C1 ~ C8, resistance R1, R2, microstrip line TL1 ~ TL3, three port connector Tee1 ~ Tee4, microstrip stubs Stub1 ~
Stub2, DC source SRC1 ~ SRC2, micro-strip ground connection circular hole V1, C1 connects the drain electrode of transistor X1, the 3rd of Tee1 through Tee1
Port connects one end of R1 through TL1 and Tee3, and the other end of R1 connects the positive pole of SRC1, and C6, C7, C8 are connected in parallel on SRC1's respectively
Positive and negative end, the 3rd port of Tee3 connects Stub1；The grid of transistor X1 is through TL2 and V1 ground connection；The source electrode of transistor X1
Connecting, through Tee2, one end that the 3rd port of C2, Tee2 connects R2 through TL3 and Tee4, the other end of R2 connects the positive pole of SRC2,
C3, C4, C5 are connected in parallel on the positive and negative end of SRC2 respectively, and the 3rd port of Tee4 connects Stub2；The negative pole of SRC1 and SRC2 is equal
Ground connection.
Load circuit include the first ~ the second varactor SMV2019-1 ~ 2, electric capacity C9 ~ C12, microstrip line TL4 ~ TL6,
Three port connector Tee5, microstrip stubs Stub3, DC source SRC3, micro-strip ground connection circular hole V2 ~ V3, four port connectors
The negative electrode of Cros1, SMV2019-1 connects relative for Cros1 two port respectively with the negative electrode of SMV2019-2, SMV2019-1's
Anode is through TL5 and V2 ground connection, and the anode of SMV2019-2 is through TL6 and V3 ground connection；3rd port of Cros1 connects C9；Cros1's
4th port connects the positive pole of SRC3 through TL4 and Tee5, and C10, C11, C12 are connected in parallel on the positive and negative end of SRC3, Tee5 respectively
The 3rd port connect Stub3, SRC3 minus earth.
Terminating circuit is the resistance being connected 50 Ω by one section of quarter-wave high impedance line, and design is mainly wanted
| the Γ IN | > 1 that seeks the voltage reflection coefficient that can make input port；First match circuit includes Tee6 and Tee6 being connected with C1
The other end connection of ground connection oscillator port Osc1, Osc1 that is connected of the 3rd port of TL7 with Tee6 that connects of the second port
C9；Second match circuit includes the TL8 being connected with C2.
Transistor is chosen, chooses 1/f noise less, the RF transistor of low frequency and intermediate frequency zone can be operated in, and
And there is in the frequency band of work the feature of low noise.Based on above-mentioned consideration, the present invention selects the BFP640-of Infineon company
NPN type SiGe type RF transistor, this transistor optimum noise is better than 1dB in 3-5GHz frequency band range, and cut-off frequency reaches
70GHz, fully meets the requirement as oscillating tube.
It addition, the SMV2019-079 silicon choosing SKYWORKS surpasses sudden change junction varactor as use in the present invention
Varactor, this varactor series resistance is little, and variable compression ratio is big.It is mounted with two same transfiguration two poles in circuit
Pipe, forms the form of anti-series, in such structure, the voltage direction phase being added on two varactors due to radiofrequency signal
Instead, so when the equivalent capacity that radiofrequency signal makes a varactor increases, the equivalent capacity of another varactor
Can reduce, such that it is able to the suppression radiofrequency signal impact on varactor equivalent capacity.
Above-mentioned variod tuning circuit, transistor DC biasing circuit, terminating circuit are passed through by integrated circuit exactly
First and second match circuits are connected, and the microstrip line in circuit is mainly used in mating variod tuning circuit and transistor
DC bias circuit, to meet the starting condition for oscillation of voltage controlled oscillator.In addition, electric capacity, resistance are chosen, except meeting
Outside pressure and power requirement, also to select according to they effects in circuit.Charging resonating device and high frequency are led to
The electric capacity on road, select to encapsulate little, and the high device of Q-value is to reduce parasitic parameter and the electric capacity of loss；For capacitance,
Loss in view of it, it is impossible to select the electric capacity that capacitance lossy is the biggest, certainly can not select the electric capacity that capacitance is too small；For
Resistance, small package, resistance and power are satisfied to be required.
As it is shown on figure 3, be the Transient starting of oscillation figure of the present invention, horizontal axis plots time/nanosecond, the longitudinal axis represents output electricity
Pressure/volt, wherein m1 represents when the time was 25.73 nanosecond, and output voltage is 1.336 volts, and it was 38.90 nanoseconds that m2 represented when the time
Time, output voltage is 1.332 volts, and simulation result shows, this voltage controlled oscillator can be with stable oscillation stationary vibration, and duration of oscillation is shorter (about
6ns).
As shown in Figure 4, for the harmonic balance emulation-fm linearity analogous diagram of the present invention, transverse axis represent VT/
Volt, the longitudinal axis represents fm linearity/hertz, and wherein m1 represents when VT is 1.000 volts, and fm linearity is
It is 9.000 volts that 4.524GHz, ind Delta represents the voltage difference of m2 to m1, and dep Delta represents the difference on the frequency of m2 to m1 and is
235.5MHz, the dotted lines in figure is fm linearity curve, and straight line is to calculate the straight line used by the linearity, it is seen that at tuning electricity
When pressure is 1 ~ 10V, fm linearity is preferable, is calculated fm linearity and is better than 3%.
As it is shown in figure 5, be the curve chart that changes with output frequency of the harmonic balance emulation-output of the present invention, transverse axis
Representing output frequency/hertz, the longitudinal axis represents output/dBm, and wherein m3 represents when output frequency is 4.572GHz,
Output is that 11.98dBm, m4 represent when output frequency is 4.760GHz, and output is 11.687dBm, simulation result
Showing, this VCO output is at 11.65 more than dBm, and in the range of 4.524GHz ~ 4.759GHz, along with output frequency
Change, the output change of VCO is the most little, fully meets the requirement of actual application.
As shown in Figure 6, for the harmonic balance emulation-each harmonic analogous diagram of the present invention, transverse axis represent overtone order/time,
The longitudinal axis represents power/dBm, and wherein m1 represents overtone order when being 1 time, and power is 11.950 dBm, and simulation result shows
Second harmonic is lower than first-harmonic.
As it is shown in fig. 7, be the harmonic balance emulation-phase noise analogous diagram of the present invention, transverse axis represents noise frequency/million
Conspicuous, the longitudinal axis represents phase noise/dBc, and wherein m2 represents when off center frequency is 100.0kHz, and phase noise reaches-
94.51dBc/Hz, m3 represent when off center frequency is 1.000MHz, and phase noise reaches-114.7dBc/Hz.
Show from Fig. 3 to Fig. 7 simulation result, phase noise-95.4dBc/Hz at this VCO mid frequency 4.64GHz, adjusting
During humorous voltage 1-10V change, frequency range is 235 MHz, and fm linearity is better than 3%, and Maximum Power Output is up to 11.65
DBm, band internal power flatness is ± 0.2 dBm.In sum, the design of a kind of C-band voltage controlled oscillator is verified.
Above example is only the technological thought that the present invention is described, it is impossible to limit protection scope of the present invention with this, every
The technological thought proposed according to the present invention, any change done on the basis of technical scheme, each fall within scope
Within.
Claims (7)
1. a C-band voltage controlled oscillator, it is characterised in that: include the load circuit for changing resonant frequency, whole for making
The transistor circuit of individual circuit oscillation, for meeting terminating circuit and first, second match circuit of oscillating condition, described negative
Carrying circuit and connect described transistor circuit through described first match circuit, described transistor circuit is through described second match circuit even
Connect described terminating circuit；
Described transistor circuit include transistor, the first ~ the 8th electric capacity, the first ~ the second resistance, the first ~ the 3rd microstrip line, first
~ the second microstrip stubs, the first ~ the second DC source, described one end of first electric capacity, the drain electrode of transistor and the first microstrip line
One end concurrent connect, one end concurrent of the other end of the first microstrip line, the first microstrip stubs and the first resistance connects, first
The other end of resistance connects the positive pole of the first DC source, and the six, the seven, the 8th electric capacity are connected in parallel on the first DC source respectively
Positive and negative end；The grid of transistor is through the second microstrip line ground connection；Second electric capacity, the source electrode of transistor and the one of the 3rd microstrip line
End concurrent connects, and one end concurrent of the other end of the 3rd microstrip line, the second microstrip stubs and the second resistance connects, the second resistance
The other end connect the positive pole of the second DC source, the three, the four, the 5th electric capacity are connected in parallel on the positive and negative of the second DC source respectively
Two ends, pole；The equal ground connection of negative pole of first, second DC source；
Described load circuit include the first ~ the second varactor, the 9th ~ the 12nd electric capacity, the 4th ~ the 6th microstrip line, the 3rd
Microstrip stubs, the 3rd DC source, one end of described 9th electric capacity, the negative electrode of the first varactor, the second transfiguration two pole
The negative electrode of pipe and one end concurrent of the 4th microstrip line connect, and the other end of the 4th microstrip line, the 3rd microstrip stubs and the 3rd are straight
The positive pole concurrent of stream power supply connects, the ten, the 11st, the 12nd electric capacity be connected in parallel on the both positive and negative polarity two of the 3rd DC source respectively
End, the anode of the first varactor through the 5th microstrip line ground connection, the anode of the second varactor through the 6th microstrip line ground connection,
The minus earth of the 3rd DC source.
2. C-band voltage controlled oscillator as claimed in claim 1, it is characterised in that: described terminating circuit includes a resistance.
3. C-band voltage controlled oscillator as claimed in claim 2, it is characterised in that: described resistance sizes is 50 Ω.
4. C-band voltage controlled oscillator as described in any one of claim 1-3, it is characterised in that: described first match circuit includes
Ground connection oscillator port that 7th microstrip line and the 9th electric capacity other end connect, make the 7th microstrip line, the other end of the first electric capacity
Three port connectors connected with ground connection oscillator port concurrent.
5. C-band voltage controlled oscillator as described in any one of claim 1-3, it is characterised in that: described second match circuit includes
The 8th microstrip line being connected with described second electric capacity.
6. C-band voltage controlled oscillator as described in any one of claim 1-3, it is characterised in that: described transistor is BFP640-
NPN type SiGe type RF transistor.
7. C-band voltage controlled oscillator as described in any one of claim 1-3, it is characterised in that: described varactor is
SMV2019-079 silicon super sudden change junction varactor.
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| CN106685360A (en) * | 2017-01-04 | 2017-05-17 | 西南交通大学 | Wideband microwave voltage-controlled oscillator |
| CN109274368A (en) * | 2018-11-14 | 2019-01-25 | 电子科技大学 | A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator |
| CN113595505B (en) * | 2021-06-25 | 2023-08-29 | 西安空间无线电技术研究所 | Anti-interference X-band voltage-controlled oscillator |
Citations (5)
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|---|---|---|---|---|
| CN1276103A (en) * | 1997-10-15 | 2000-12-06 | 摩托罗拉公司 | Dual band voltage controlled oscillator |
| JP2002290152A (en) * | 2001-03-28 | 2002-10-04 | Nippon Dempa Kogyo Co Ltd | Voltage-controlled oscillator |
| JP2003218635A (en) * | 2002-01-17 | 2003-07-31 | Sharp Corp | Voltage-controlled oscillator |
| CN101399543A (en) * | 2008-09-19 | 2009-04-01 | 广州逸锋电子科技有限公司 | High frequency voltage controlled oscillator |
| CN203827295U (en) * | 2014-04-18 | 2014-09-10 | 南京信息工程大学 | C-waveband voltage-controlled oscillator |
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2014
- 2014-04-18 CN CN201410157423.4A patent/CN103973228B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1276103A (en) * | 1997-10-15 | 2000-12-06 | 摩托罗拉公司 | Dual band voltage controlled oscillator |
| JP2002290152A (en) * | 2001-03-28 | 2002-10-04 | Nippon Dempa Kogyo Co Ltd | Voltage-controlled oscillator |
| JP2003218635A (en) * | 2002-01-17 | 2003-07-31 | Sharp Corp | Voltage-controlled oscillator |
| CN101399543A (en) * | 2008-09-19 | 2009-04-01 | 广州逸锋电子科技有限公司 | High frequency voltage controlled oscillator |
| CN203827295U (en) * | 2014-04-18 | 2014-09-10 | 南京信息工程大学 | C-waveband voltage-controlled oscillator |
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