CN102055472A - X-waveband voltage-controlled oscillator - Google Patents
X-waveband voltage-controlled oscillator Download PDFInfo
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- CN102055472A CN102055472A CN 201010581462 CN201010581462A CN102055472A CN 102055472 A CN102055472 A CN 102055472A CN 201010581462 CN201010581462 CN 201010581462 CN 201010581462 A CN201010581462 A CN 201010581462A CN 102055472 A CN102055472 A CN 102055472A
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Abstract
The invention discloses an X-waveband voltage-controlled oscillator, which belongs to the technical field of electronics. In the X-waveband voltage-controlled oscillator, a circuit is tuned by adopting a bismuth zinc niobate (BZN) dielectric film voltage-controlled capacitor, wherein the tuning bandwidth is greater than 100 MHz; a half-wavelength U-shaped microstrip coupled resonator is used as a resonant loop of the voltage-controlled oscillator (VCO) so as to reduce phase noises of the voltage-controlled oscillator; tuning and biasing circuits realize choking by adopting high and low impedance lines; and a low-loss aluminum oxide ceramic substrate and a microstrip integrated process are adopted. Therefore, the X-waveband voltage-controlled oscillator has the characteristics of small volume and light weight.
Description
Technical field
The invention belongs to electronic technology field, relate to voltage controlled oscillator, especially a kind of X-band voltage controlled oscillator based on BZN dielectric film voltage controlled capacitor and U-shaped coupled resonators.
Background technology
Frequency source is the critical component in the electronic system, at microwave communication, radar system, electronic countermeasures, guidance, instrument and instrument measurement, and all has widely in the field such as biomedical engineering and uses.In all wireless systems, the frequency source part that more is absolutely necessary plays a part very importantly to whole system, therefore often be called as in " heart " of electronic system.Along with the development of technology such as radar, electronic countermeasures, satellite communication, more and more higher requirement has been proposed also for the indexs such as spectral purity, frequency stability, frequency resolution and bandwidth of operation of frequency source.
In the microwave frequency source, voltage controlled oscillator (VCO) is its core building block, in order to produce the controlled microwave oscillation signal of frequency.The tuning characteristic of VCO and phase noise have directly determined the quality of every performance index of frequency source.In order to make the frequency-tunable of VCO, just need in the VCO circuit, add electric tuning or magnetic tuning device, and the noise that loss produced of tuned cell is the important component part that causes in the VCO phase noise.
The main tunable devices that adopts has semiconductor variable capacitance diode, ferroelectric capacitor, micro electromechanical structure (MEMS) electric capacity, mechanical varactor etc. among the VCO at present, and the contrast of their various aspects of performance sees Table 1.Semiconductor variable capacitance diode is compared with mechanical capacitance with MEMS electric capacity with ferroelectric capacitor, and adjustable rate is big, and electric speed governing degree height can be competent in broadband, victory change frequency hopping source up to octave, and its application is quite extensive.However, the varactor radio frequency loss is relatively large, and particularly at microwave and millimeter wave frequency band, its loss further increases, and causes that the phase noise of VCO circuit worsens.
The performance of table 1 variable capacitance diode, ferroelectric capacitor, MEMS electric capacity and mechanical capacitance relatively
| Parameter | Semiconductor variable capacitance diode | Ferroelectric capacitor | MEMS electric capacity | The machinery varactor |
| Adjustable rate | High (2～5: 1) | High (2～3: 1) | Low by (＜1.5: 1) | Moderate |
| Radio frequency loss (Q) | In (Q＜60) | In (Q＜40 are present) | Good (Q＜200) | Good |
| Control voltage | ＜10V (single-stage) | 10～90V (bipolar) | 50～100V (bipolar) | - |
| Modulating speed | Hurry up | Hurry up | Slowly | Slowly |
| The power bearing capacity | Difference | Relevant with voltage | Excellent | Excellent |
| Cost | Moderate～height | Low | High | Low |
BZN (bismuth zinc niobate) film is one of current electric tuning material of new generation of studying, BZN dielectric film voltage controlled capacitor is compared with conventional semiconductor variable capacitance diode, the loss of BZN dielectric film voltage controlled capacitor under microwave frequency is lower, Q value (quality factor) is higher, and the tunable capacitor that therefore adopts the BZN film to make replaces BZN dielectric film voltage controlled capacitor and will the phase noise of VCO be made moderate progress.
Summary of the invention
The invention provides a kind of X-band voltage controlled oscillator, it is tuning that this voltage controlled oscillator adopts BZN dielectric film voltage controlled capacitor that circuit is carried out, and tuning bandwidth is greater than 100MHz; Adopt the resonant tank of half-wavelength U type microstrip line coupled resonators simultaneously, reduced the phase noise of voltage controlled oscillator as VCO.
Technical solution of the present invention is as follows:
A kind of X-band voltage controlled oscillator as shown in Figure 5, is made on the alumina ceramic substrate, comprises a half-wavelength U type microstrip line coupled resonators, a BZN dielectric film voltage controlled capacitor C
vWith a gaas fet.Half-wavelength U type microstrip line coupled resonators by a half-wavelength U type mini strip line resonator with constitute with the microstrip line of two parallel couplings of side of half-wavelength U type mini strip line resonator respectively.In the half-wavelength U type microstrip line coupled resonators, with an end of the microstrip line 20 of a parallel coupling of side of half-wavelength U type mini strip line resonator by BZN dielectric film voltage controlled capacitor C
vGround connection; With an end of the microstrip line 8 of the parallel coupling of another side of half-wavelength U type mini strip line resonator by behind first little band connecting line 9 again by build-out resistor R1 ground connection, the other end is successively by connecing the source S of gaas fet behind second little band connecting line 7, the first capacitance C2 and the 3rd little band connecting line 6.The grid G of gaas fet is by phase adjusted microstrip line 4 ground connection, and the drain D of gaas fet is successively by linking to each other with output microstrip line 1 behind first little band high resistant line the 3, the 4th little band connecting line 2, the second capacitance C1.BZN dielectric film voltage controlled capacitor C
vVoltage-controlled signal put on intermediate point with the microstrip line 20 of a parallel coupling of side of half-wavelength U type mini strip line resonator by second little band high resistant line 22, have the low pass filter that constitutes by the first shunt capacitance C5 and first fan-shaped offset of microstrip open circuit minor matters 23 on second little band high resistant line 22.The drain D bias voltage of gaas fet puts on the 4th little band connecting line 2 by the 3rd little band high resistant line 11, has the low pass filter that is made of the second shunt capacitance C3 and second fan-shaped offset of microstrip open circuit minor matters 12 on the 3rd little band high resistant line 11.The source S bias voltage of gaas fet puts on the 3rd little band connecting line 6 by the 4th little band high resistant line 14, has the low pass filter that is made of the 3rd shunt capacitance C4 and the 3rd fan-shaped offset of microstrip open circuit minor matters 15 on the 4th little band high resistant line 14.
High Q resonant tank is one of important measures that reduce the VCO phase noise, and the present invention adopts the resonant tank of half-wavelength U type mini strip line resonator as VCO, and shown in Fig. 1 (a), Fig. 1 (b) is the lumped parameter equivalent circuit of half-wavelength U type resonator.C wherein
e, L
e, G
eCharacterize half-wavelength U type resonator respectively in resonance frequency omega
0Neighbouring electric capacity, inductance and conductance property, and the resonance frequency of half-wavelength U type resonator
For the resonance frequency that makes resonator can be regulated, the present invention utilizes BZN dielectric film voltage controlled capacitor C in a side of half-wavelength U type resonator
vCarry out the energy coupling by one section parallel coupled line 20 and half-wavelength U type resonator, realize the tuning of resonance frequency with this; Opposite side at half-wavelength U type resonator is coupled to 50 ohm microstrip by another section parallel coupled line 8, sets up with negative resistance circuit and gets in touch, and finally realizes the tuning of VCO frequency of oscillation.
U type coupled resonators structure and equivalent electric circuit thereof utilize the power coupled relation of the equivalent parallel coupled line of transformer shown in Fig. 2 (a), then load BZN dielectric film voltage controlled capacitor C
vAfter U type coupled resonators can be converted into the equivalent electric circuit shown in Fig. 2 (b).Use L
tExpression BZN dielectric film voltage controlled capacitor C
vBe presented on the inductance at place, coupling slit after the microstrip line impedance conversion, then half-wavelength U type resonator loads BZN dielectric film voltage controlled capacitor C
vAfter equivalent inductance be expressed as L
Et, and:
L wherein
t'=L
t/ N
v 2, N
vTransformation ratio for Equivalent Transformer.Therefore, the natural resonance frequency of half-wavelength U type resonator is
Shown in following formula, along with BZN dielectric film voltage controlled capacitor C
vWith half-wavelength U type coupled resonators transformation ratio N
vVariation, the resonance frequency of half-wavelength U type resonator also and then changes, thereby makes half-wavelength U type resonator at BZN dielectric film voltage controlled capacitor C
vWith half-wavelength U type coupled resonators transformation ratio N
vExcursion in obtain certain resonant bandwidth.BZN dielectric film voltage controlled capacitor C
vVariation be that variation by its control voltage realizes and half-wavelength U type coupled resonators transformation ratio N
vVariation then can realize by the slit of regulating between half-wavelength U type resonator and the parallel coupled line 20, reach the required bandwidth requirement of whole X-band voltage controlled oscillator by these two adjusting.
Biasing and tuning circuit adopt high low-impedance line to realize chokes.The biasing circuit chokes are made of fan-shaped offset of microstrip open circuit minor matters 12,15 and high impedance microstrip line 11,14, are 1/4 operation wavelength.The tuning circuit chokes are made of fan-shaped offset of microstrip open circuit minor matters 23 and high impedance microstrip line 22, are 1/4 operation wavelength.
To sum up, X-band voltage controlled oscillator provided by the invention adopts low-loss alumina ceramic substrate and microstrip line integrated technique, has little, the lightweight characteristics of volume; It is tuning to adopt BZN dielectric film voltage controlled capacitor that circuit is carried out, and tuning bandwidth is greater than 100MHz; Adopt the resonant tank of half-wavelength U type microstrip line coupled resonators simultaneously, reduced the phase noise of voltage controlled oscillator as VCO.
Description of drawings
Fig. 1 is half-wavelength U type mini strip line resonator structure and equivalent electric circuit thereof.
Fig. 2 is half-wavelength U type microstrip line coupled resonators structure and equivalent electric circuit thereof.
Fig. 3 is the physical dimension signal of U type microstrip line coupled resonators in the specific embodiment of the invention.
Fig. 4 is in the X-band voltage controlled oscillator provided by the invention, the connection of gaas fet signal.
Fig. 5 is the circuit structure signal of X-band voltage controlled oscillator provided by the invention.
Embodiment
A kind of X-band voltage controlled oscillator, as shown in Figure 5, be made in dielectric constant and be 9.9, thickness is that 0.635mm, loss tangent are on 0.0002 the alumina ceramic substrate, to comprise a half-wavelength U type microstrip line coupled resonators, a BZN dielectric film voltage controlled capacitor C
vWith a gaas fet.Half-wavelength U type microstrip line coupled resonators by a half-wavelength U type mini strip line resonator with constitute with the microstrip line of two parallel couplings of side of half-wavelength U type mini strip line resonator respectively.In the half-wavelength U type microstrip line coupled resonators, with an end of the microstrip line 20 of a parallel coupling of side of half-wavelength U type mini strip line resonator by BZN dielectric film voltage controlled capacitor C
vGround connection; With an end of the microstrip line 8 of the parallel coupling of another side of half-wavelength U type mini strip line resonator by behind first little band connecting line 9 again by build-out resistor R1 ground connection, the other end is successively by connecing the source S of gaas fet behind second little band connecting line 7, the first capacitance C2 and the 3rd little band connecting line 6.The grid G of gaas fet is by phase adjusted microstrip line 4 ground connection, and the drain D of gaas fet is successively by linking to each other with output microstrip line 1 behind first little band high resistant line the 3, the 4th little band connecting line 2, the second capacitance C1.BZN dielectric film voltage controlled capacitor C
vVoltage-controlled signal put on intermediate point with the microstrip line 20 of a parallel coupling of side of half-wavelength U type mini strip line resonator by second little band high resistant line 22, have the low pass filter that constitutes by the first shunt capacitance C5 and first fan-shaped offset of microstrip open circuit minor matters 23 on second little band high resistant line 22.The drain D bias voltage of gaas fet puts on the 4th little band connecting line 2 by the 3rd little band high resistant line 11, has the low pass filter that is made of the second shunt capacitance C3 and second fan-shaped offset of microstrip open circuit minor matters 12 on the 3rd little band high resistant line 11.The source S bias voltage of gaas fet puts on the 3rd little band connecting line 6 by the 4th little band high resistant line 14, has the low pass filter that is made of the 3rd shunt capacitance C4 and the 3rd fan-shaped offset of microstrip open circuit minor matters 15 on the 4th little band high resistant line 14.
In the such scheme:
Described half-wavelength U type microstrip line coupled resonators as shown in Figure 3, wherein the width of a side of half-wavelength U type mini strip line resonator is that 0.62mm, length are 1.98mm, the width of another side is that 0.4mm, length are 1.98mm, the base width is 0.62mm, two sides are at a distance of 1.48mm, with a parallel coupling of side, coupling spacing is that the width of the microstrip line 8 of 0.2mm is that 0.62mm, length are 1.98mm, is that the width of the microstrip line 20 of 0.1mm is that 0.4mm, length are 1.98mm with the parallel coupling of another side, coupling spacing;
The model of described gaas fet is CF001, and die-size is 400um * 250um; The width of described output microstrip line 1, first little band connecting line 9, second little band connecting line the 7, the 3rd little band connecting line the 6, the 4th little band connecting line 2 is 0.62mm; The width of described first little band high resistant line 3 is that 100um, length are 1.6mm; The width of described phase adjusted microstrip line 4 is that 100um, length are 1.3mm; The width of described second little band high resistant line the 22, the 3rd little band high resistant line the 11 and the 4th little band high resistant line 14 is that 0.1mm, length are 1/4 wavelength; The resistance of described build-out resistor R1 is 50 ohm; The capacitance of described shunt capacitance (C3, C4, C5) is 20pf; The capacitance of described capacitance (C1, C2) is 20pf; Described BZN dielectric film voltage controlled capacitor C
vThe capacitance variation scope be 0.24～1.2pf; The fan-shaped angle of described first fan-shaped offset of microstrip open circuit minor matters 23, second fan-shaped offset of microstrip open circuit minor matters 12, the 3rd fan-shaped offset of microstrip open circuit minor matters 15 should be big as far as possible, and the line radius is 3.4mm.
The technical indicator of above-mentioned X-band VCO is through actual measurement, and its output frequency is 9.6GHz～9.77GHz, and bandwidth is 170MHz, and the phase noise coefficient is less than-115dBc.
Claims (2)
1. an X-band voltage controlled oscillator is made on the alumina ceramic substrate, comprises a half-wavelength U type microstrip line coupled resonators, a BZN dielectric film voltage controlled capacitor (C
v) and a gaas fet;
Half-wavelength U type microstrip line coupled resonators by a half-wavelength U type mini strip line resonator with constitute with the microstrip line of two parallel couplings of side of half-wavelength U type mini strip line resonator respectively;
In the half-wavelength U type microstrip line coupled resonators, with an end of the microstrip line (20) of a parallel coupling of side of half-wavelength U type mini strip line resonator by BZN dielectric film voltage controlled capacitor (C
v) ground connection; With an end of the microstrip line (8) of the parallel coupling of another side of half-wavelength U type mini strip line resonator by behind first little band connecting line (9) again by build-out resistor (R1) ground connection, the other end is successively by connecing the source electrode (S) of gaas fet behind second little band connecting line (7), first capacitance (C2) and the 3rd little band connecting line (6);
The grid of gaas fet (G) is by phase adjusted microstrip line (4) ground connection, and the drain electrode of gaas fet (D) links to each other with output microstrip line (1) by first little band high resistant line (3), the 4th little band connecting line (2), second capacitance (C1) back successively;
BZN dielectric film voltage controlled capacitor (C
v) voltage-controlled signal put on intermediate point with the microstrip line (20) of a parallel coupling of side of half-wavelength U type mini strip line resonator by second little band high resistant line (22), have the low pass filter that constitutes by first shunt capacitance (C5) and first fan-shaped offset of microstrip open circuit minor matters (23) on second little band high resistant line (22);
The drain electrode of gaas fet (D) bias voltage puts on the 4th little band connecting line (2) by the 3rd little band high resistant line (11), has the low pass filter that is made of second shunt capacitance (C3) and second fan-shaped offset of microstrip open circuit minor matters (12) on the 3rd little band high resistant line (11);
The source electrode of gaas fet (S) bias voltage puts on the 3rd little band connecting line (6) by the 4th little band high resistant line (14), has the low pass filter that is made of the 3rd shunt capacitance (C4) and the 3rd fan-shaped offset of microstrip open circuit minor matters (15) on the 4th little band high resistant line (14).
2. X-band voltage controlled oscillator according to claim 1 is characterized in that:
The dielectric constant of described alumina ceramic substrate is 9.9, thickness is that 0.635mm, loss tangent are 0.0002;
The width of a side of half-wavelength U type mini strip line resonator is that 0.62mm, length are 1.98mm in the described half-wavelength U type microstrip line coupled resonators, the width of another side is that 0.4mm, length are 1.98mm, the base width is 0.62mm, two sides are at a distance of 1.48mm, with a parallel coupling of side, coupling spacing is that the width of the microstrip line (8) of 0.2mm is that 0.62mm, length are 1.98mm, is that the width of the microstrip line (20) of 0.1mm is that 0.4mm, length are 1.98mm with the parallel coupling of another side, coupling spacing;
The model of described gaas fet is CF001, and die-size is 400um * 250um; The width of described output microstrip line (1), first little band connecting line (9), second little band connecting line (7), the 3rd little band connecting line (6), the 4th little band connecting line (2) is 0.62mm; The width of described first little band high resistant line (3) is that 100um, length are 1.6mm; The width of described phase adjusted microstrip line (4) is that 100um, length are 1.3mm; The width of described second little band high resistant line (22), the 3rd little band high resistant line (11) and the 4th little band high resistant line (14) is that 0.1mm, length are 1/4 wavelength; The resistance of described build-out resistor (R1) is 50 ohm; The capacitance of described shunt capacitance (C3, C4, C5) is 20pf; The capacitance of described capacitance (C1, C2) is 20pf; Described BZN dielectric film voltage controlled capacitor (C
v) the capacitance variation scope be 0.24～1.2pf; The fan-shaped angle of described first fan-shaped offset of microstrip open circuit minor matters (23), second fan-shaped offset of microstrip open circuit minor matters (12), the 3rd fan-shaped offset of microstrip open circuit minor matters (15) should be big as far as possible, and the line radius is 3.4mm.
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106788257A (en) * | 2016-11-23 | 2017-05-31 | 西南大学 | Ka wave band single-chip integration voltage controlled oscillators based on plane Gunn diode |
| CN109274368A (en) * | 2018-11-14 | 2019-01-25 | 电子科技大学 | A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator |
| CN109888446A (en) * | 2019-04-10 | 2019-06-14 | 曾运华 | A kind of active resonator of loss balancing type electricity tune and its loss compensation method |
| CN110266308A (en) * | 2019-07-08 | 2019-09-20 | 中国电子科技集团公司第十三研究所 | A kind of voltage-controlled oscillator circuit and chip |
| CN110265752A (en) * | 2019-06-04 | 2019-09-20 | 广东圣大电子有限公司 | A kind of X-band Medium Wave Guide electricity tune microwave equalizer |
| CN110289813A (en) * | 2019-07-15 | 2019-09-27 | 电子科技大学 | A kind of low phase noise oscillator with harmonics restraint |
| CN110971191A (en) * | 2019-11-28 | 2020-04-07 | 中国电子科技集团公司第十三研究所 | Push dielectric oscillator |
| CN111487591A (en) * | 2020-05-22 | 2020-08-04 | 重庆邮电大学 | Low-phase-noise microstrip oscillator applied to millimeter wave radar |
| CN117219995A (en) * | 2023-11-07 | 2023-12-12 | 成都宏科电子科技有限公司 | Ultra-wideband miniaturized thin film band-pass filter based on ceramic substrate |
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Cited By (15)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106788257A (en) * | 2016-11-23 | 2017-05-31 | 西南大学 | Ka wave band single-chip integration voltage controlled oscillators based on plane Gunn diode |
| CN109274368A (en) * | 2018-11-14 | 2019-01-25 | 电子科技大学 | A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator |
| CN109888446A (en) * | 2019-04-10 | 2019-06-14 | 曾运华 | A kind of active resonator of loss balancing type electricity tune and its loss compensation method |
| CN109888446B (en) * | 2019-04-10 | 2024-05-21 | 曾运华 | Loss compensation type electrically-tunable active resonator and loss compensation method thereof |
| CN110265752A (en) * | 2019-06-04 | 2019-09-20 | 广东圣大电子有限公司 | A kind of X-band Medium Wave Guide electricity tune microwave equalizer |
| CN110265752B (en) * | 2019-06-04 | 2024-02-20 | 广东圣大电子有限公司 | X-band dielectric wave conductive tuning microwave equalizer |
| CN110266308B (en) * | 2019-07-08 | 2023-04-18 | 中国电子科技集团公司第十三研究所 | Voltage controlled oscillator circuit and chip |
| CN110266308A (en) * | 2019-07-08 | 2019-09-20 | 中国电子科技集团公司第十三研究所 | A kind of voltage-controlled oscillator circuit and chip |
| CN110289813B (en) * | 2019-07-15 | 2021-06-08 | 电子科技大学 | Low phase noise oscillator with harmonic suppression |
| CN110289813A (en) * | 2019-07-15 | 2019-09-27 | 电子科技大学 | A kind of low phase noise oscillator with harmonics restraint |
| CN110971191A (en) * | 2019-11-28 | 2020-04-07 | 中国电子科技集团公司第十三研究所 | Push dielectric oscillator |
| CN111487591A (en) * | 2020-05-22 | 2020-08-04 | 重庆邮电大学 | Low-phase-noise microstrip oscillator applied to millimeter wave radar |
| CN111487591B (en) * | 2020-05-22 | 2023-05-12 | 重庆邮电大学 | Low-phase-noise microstrip oscillator applied to millimeter wave radar |
| CN117219995A (en) * | 2023-11-07 | 2023-12-12 | 成都宏科电子科技有限公司 | Ultra-wideband miniaturized thin film band-pass filter based on ceramic substrate |
| CN117219995B (en) * | 2023-11-07 | 2024-01-30 | 成都宏科电子科技有限公司 | Ultra-wideband miniaturized thin film band-pass filter based on ceramic substrate |
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