CN110266308B - Voltage controlled oscillator circuit and chip - Google Patents
Voltage controlled oscillator circuit and chip Download PDFInfo
- Publication number
- CN110266308B CN110266308B CN201910611048.9A CN201910611048A CN110266308B CN 110266308 B CN110266308 B CN 110266308B CN 201910611048 A CN201910611048 A CN 201910611048A CN 110266308 B CN110266308 B CN 110266308B
- Authority
- CN
- China
- Prior art keywords
- voltage
- coupling line
- controlled oscillator
- module
- transistor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 230000008878 coupling Effects 0.000 claims abstract description 70
- 238000010168 coupling process Methods 0.000 claims abstract description 70
- 238000005859 coupling reaction Methods 0.000 claims abstract description 70
- 239000000758 substrate Substances 0.000 claims description 9
- 230000005540 biological transmission Effects 0.000 claims description 8
- 238000005516 engineering process Methods 0.000 claims 1
- 238000006880 cross-coupling reaction Methods 0.000 abstract description 5
- PHLXSNIEQIKENK-UHFFFAOYSA-N 2-[[2-[5-methyl-3-(trifluoromethyl)pyrazol-1-yl]acetyl]amino]-4,5,6,7-tetrahydro-1-benzothiophene-3-carboxamide Chemical compound CC1=CC(C(F)(F)F)=NN1CC(=O)NC1=C(C(N)=O)C(CCCC2)=C2S1 PHLXSNIEQIKENK-UHFFFAOYSA-N 0.000 description 7
- 101100230601 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) HBT1 gene Proteins 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 4
- 230000003321 amplification Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03L—AUTOMATIC CONTROL, STARTING, SYNCHRONISATION OR STABILISATION OF GENERATORS OF ELECTRONIC OSCILLATIONS OR PULSES
- H03L7/00—Automatic control of frequency or phase; Synchronisation
- H03L7/06—Automatic control of frequency or phase; Synchronisation using a reference signal applied to a frequency- or phase-locked loop
- H03L7/08—Details of the phase-locked loop
- H03L7/099—Details of the phase-locked loop concerning mainly the controlled oscillator of the loop
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Landscapes
- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
- Oscillators With Electromechanical Resonators (AREA)
Abstract
The invention relates to the technical field of and discloses a voltage-controlled oscillator circuit and a chip, which comprise a first transistor module, a second transistor module, a coupling line and a current limiting module; the first end of the coupling line is connected with the high potential end of the first transistor module in a common mode, the second end of the coupling line is connected with the controlled end of the second transistor module, the third end of the coupling line is connected with the controlled end of the first transistor module, the fourth end of the coupling line is connected with the high potential end of the second transistor module in a common mode, the voltage input end of the coupling line is the first input end of the voltage-controlled oscillator circuit, the low potential end of the first transistor module, the low potential end of the second transistor module and the first end of the current limiting module are connected, and the second end of the current limiting module is the second input end of the voltage-controlled oscillator circuit. According to the invention, the ultra-wideband characteristic of the voltage-controlled oscillator with a large output frequency tuning range is realized through the cross-coupling feedback design of the coupling line, the first transistor module and the second transistor module.
Description
Technical Field
The invention relates to the technical field of microwave integrated circuits, in particular to a voltage-controlled oscillator circuit and a chip.
Background
In a microwave transceiving front-end system, a frequency source is used as a core module and is the guarantee of the normal operation of the whole system, and a high-performance Voltage Controlled Oscillator (VCO) is the main component of the frequency source.
The performance index of the voltage-controlled oscillator is an important reference standard for evaluating the quality of the voltage-controlled oscillator, and the emphasis of the referenced performance index is shifted in different application fields. The tuning range of the voltage-controlled oscillator is an important index for measuring the performance of the voltage-controlled oscillator, and the tuning range of the output frequency of the current voltage-controlled oscillator is small and cannot meet the use requirement.
Disclosure of Invention
The embodiment of the invention provides a voltage-controlled oscillator circuit and a chip, aiming at solving the problem that the tuning range of the output frequency of the current voltage-controlled oscillator is smaller.
A first aspect of an embodiment of the present invention provides a voltage-controlled oscillator circuit, including a first transistor module, a second transistor module, a coupling line, and a current limiting module;
a first end of the coupling line is connected with a high potential end of the first transistor module in a common mode to form a first output end of the voltage-controlled oscillator circuit, a second end of the coupling line is connected with a controlled end of the second transistor module, a third end of the coupling line is connected with a controlled end of the first transistor module, a fourth end of the coupling line is connected with a high potential end of the second transistor module in a common mode to form a second output end of the voltage-controlled oscillator circuit, a ground end of the coupling line is grounded, a voltage input end of the coupling line is a first input end of the voltage-controlled oscillator circuit, a low potential end of the first transistor module, a low potential end of the second transistor module and a first end of the current limiting module are connected, and a second end of the current limiting module is a second input end of the voltage-controlled oscillator circuit; the first end of the coupling line and the second end of the coupling line are on the same side of the coupling line, and the third end of the coupling line and the fourth end of the coupling line are on the same side of the coupling line; the first end of the coupling line and the fourth end of the coupling line are respectively two ends of a first transmission line of the coupling line, and the second end of the coupling line and the third end of the coupling line are respectively two ends of a second transmission line of the coupling line;
the first input end of the voltage-controlled oscillator circuit is used for inputting a tuning voltage and a bias voltage, and the second input end of the voltage-controlled oscillator circuit is used for inputting a negative voltage.
In an embodiment of the present application, the first transistor module comprises a first heterojunction bipolar transistor;
the collector of the first heterojunction bipolar transistor is the high-potential end of the first transistor module, the emitter of the first heterojunction bipolar transistor is the low-potential end of the first transistor module, and the base of the first heterojunction bipolar transistor is the controlled end of the first transistor module.
In an embodiment of the application, the second transistor module comprises a second heterojunction bipolar transistor;
the collector of the second heterojunction bipolar transistor is a high-potential end of the second transistor module, the emitter of the second heterojunction bipolar transistor is a low-potential end of the second transistor module, and the base of the second heterojunction bipolar transistor is a controlled end of the second transistor module.
In an embodiment of the present application, the current limiting module includes a resistor, a first end of the resistor is a first end of the current limiting module, and a second end of the resistor is a second end of the current limiting module.
In an embodiment of the application, the heterojunction bipolar transistor is made from InP process.
In the embodiment of the application, the cut-off frequency of the heterojunction bipolar transistor is 180GHz, and the maximum direct current gain is 50.
A second aspect of an embodiment of the present invention provides a voltage controlled oscillator chip, which includes a substrate and the above voltage controlled oscillator circuit disposed on the substrate.
In an embodiment of the present application, when the first transistor module is a heterojunction bipolar transistor, an emitter line width of the heterojunction bipolar transistor is 1 μm, and an emitter size is 1 μm × 10 μm.
In an embodiment of the present application, a ground-signal-ground pad and a power supply bias pad are further included on the substrate.
According to the invention, the ultra-wideband characteristic of the voltage-controlled oscillator with a large output frequency tuning range is realized through the cross-coupling feedback design of the coupling line, the first transistor module and the second transistor module.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings needed to be used in the embodiments will be briefly described below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art that other drawings can be obtained according to these drawings without inventive labor.
Fig. 1 is a schematic structural diagram of a voltage-controlled oscillator circuit according to an embodiment of the present invention;
fig. 2 is a schematic structural diagram of a heterojunction bipolar transistor according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a vco chip according to an embodiment of the present invention;
fig. 4 is a graph illustrating a variation of an output frequency of a vco chip with a tuning voltage according to an embodiment of the present invention;
fig. 5 is a graph of output power and current versus tuning voltage of a vco chip according to an embodiment of the present invention;
fig. 6 is a curve of the output frequency of the vco chip varying with the supply voltage according to an embodiment of the present invention;
fig. 7 is a graph of output power and current versus supply voltage for a vco chip according to an embodiment of the present invention;
fig. 8 is a diagram of an output spectrum of a vco chip according to an embodiment of the present invention;
fig. 9 is a diagram illustrating a phase noise measurement result of a vco chip according to an embodiment of the present invention.
Detailed Description
In order to make the technical solution better understood by those skilled in the art, the technical solution in the embodiment of the present invention will be clearly described below with reference to the drawings in the embodiment of the present invention, and it is obvious that the described embodiment is a part of the embodiment of the present invention, and not a whole embodiment. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present solution.
The terms "include" and any other variations in the description and claims of this document and the above-described figures, mean "including but not limited to", and are intended to cover non-exclusive inclusions. Furthermore, the terms "first" and "second," etc. are used to distinguish between different objects and are not used to describe a particular order.
Implementations of the present invention are described in detail below with reference to the following detailed drawings:
fig. 1 shows a voltage-controlled oscillator circuit according to an embodiment of the present invention, and for convenience of illustration, only the parts related to the embodiment of the present invention are shown, and the details are as follows:
as shown in fig. 1, a voltage controlled oscillator circuit according to an embodiment of the present invention includes a first transistor module 110, a second transistor module 120, a coupling line, and a current limiting module 130;
a first end of the coupling line is connected to the high potential end of the first transistor module 110 to form a first output end of the voltage controlled oscillator circuit, a second end of the coupling line is connected to the controlled end of the second transistor module 120, a third end of the coupling line is connected to the controlled end of the first transistor module 110, a fourth end of the coupling line is connected to the high potential end of the second transistor module 120 to form a second output end of the voltage controlled oscillator circuit, a ground end of the coupling line is grounded, a voltage input end of the coupling line is a first input end of the voltage controlled oscillator circuit, a low potential end of the first transistor module 110, a low potential end of the second transistor module 120 and a first end of the current limiting module are connected, and a second end of the current limiting module 130 is a second input end of the voltage controlled oscillator circuit; the first end of the coupling line and the second end of the coupling line are on the same side of the coupling line, and the third end of the coupling line and the fourth end of the coupling line are on the same side of the coupling line; the first end of the coupling line and the fourth end of the coupling line are respectively two ends of a first transmission line of the coupling line, and the second end of the coupling line and the third end of the coupling line are respectively two ends of a second transmission line of the coupling line; the first transmission line is provided with a grounding end of the coupling line, and the second transmission line is provided with a voltage input end of the coupling line.
The first input end of the voltage-controlled oscillator circuit is used for inputting a tuning voltage V TUNE And a bias voltage V B A second input terminal of the voltage-controlled oscillator circuit is used for inputting a negative voltage V EE 。
In this embodiment, the first output terminal ON of the voltage controlled oscillator circuit and the second output terminal OP of the voltage controlled oscillator circuit are differential outputs.
In the embodiment of the invention, the Voltage Controlled Oscillator (VCO) circuit with the cross-coupling structure has a plurality of advantages that: easy oscillation starting, large output power and differential output ends. In general, a cross-coupled loop is composed of a capacitor, an inductor, and a varactor device, and has a complex structure, and it is not easy to realize high-frequency and broadband characteristics. The invention adopts the cross-coupling line feedback structure with improved design, not only realizes the isolation of the base electrode and the collector electrode of the HBT device, but also provides a loop load inductor, and simultaneously can save a variable capacitor device and directly use the junction capacitor of the resonant HBT to form a resonant loop.
The coupling line (CTL) with improved design takes GND and VTUNE as microwave grounding points respectively, and has certain amount of inductance and capacitance in a crossed oscillation loop, so that oscillation with certain frequency can be formed, a variable capacitor device with a traditional structure can be omitted, junction capacitors of HBT1 and HBT2 are directly adopted for tuning, and tuning voltage V is obtained TUNE And a bias voltage V B The two are combined into one. When tuning V B In the process, the common emitter transistors HBT1 and HBT2 have an amplification effect, the phase difference of signals at two ends of the coupling line is 180 degrees, the coupling line works in an odd-mode state, distributed inductance is small, the working frequency of the oscillating circuit can be obviously improved, and meanwhile phase noise of the circuit can be reduced due to a high Q value. The circuit also achieves a broadband tuning characteristic as the resonant tank becomes more capacitive. The output frequency range is 16-32 GHz, and the tuning range of one octave is realized.
The cross-coupling line feedback structure with improved design is adopted, a varactor diode used by the traditional VCO is omitted, the same HBT device is used for oscillation and tuning, and the power supply voltage and the bias voltage of the circuit have the function of tuning the output frequency of the VCO while supplying power. The chip circuit has the fine tuning, namely double-tuning characteristic of the 1.4GHz bandwidth on the basis of the broadband characteristic of the output frequency of 16-32 GHz.
The output power is high. The current of the VCO chip circuit under-5V working voltage is less than 36mA, the typical output power is 0dBm, and the phase noise is-73 dBc/Hz when 100kHz is out of regulation.
In an embodiment of the present invention, the first transistor module 110 includes a first heterojunction bipolar transistor HBT1;
the collector of the first heterojunction bipolar transistor HBT1 is a high-potential end of the first transistor module, the emitter of the first heterojunction bipolar transistor HBT1 is a low-potential end of the first transistor module, and the base of the first heterojunction bipolar transistor HBT1 is a controlled end of the first transistor module.
In an embodiment of the present invention, the second transistor module 120 includes a second heterojunction bipolar transistor HBT2;
the collector of the second heterojunction bipolar transistor HBT2 is a high-potential end of the second transistor module, the emitter of the second heterojunction bipolar transistor HBT2 is a low-potential end of the second transistor module, and the base of the second heterojunction bipolar transistor HBT2 is a controlled end of the second transistor module.
In an embodiment of the invention, the current limiting module comprises a resistor R E Said resistance R E The first end of the current limiting module, the resistor R E Is a second end of the current limiting module.
In this embodiment, the circuit uses a single power supply V EE Negative voltage power supply, resistance R E For current limiting and negative feedback. If V is fixed B (V TUNE ) Changing V EE The junction capacitances of HBT1 and HBT2 follow changes, so the circuit also has a tuning effect, due to R E The tuning sensitivity may be reduced. The VCO circuit has double tuning function, V B (V TUNE ) For coarse tuning, VEE is fine tuning.
In an embodiment of the invention, the heterojunction bipolar transistor is made from an InP process.
In this embodiment, a mature InP HBT process is adopted, the emitter line width is 1 μm, the cutoff frequency of the HBT device is 180GHz, the maximum dc gain is 50, the HBT device has excellent microwave amplification characteristics and low phase noise characteristics, and the collector junction capacitance value is continuously adjustable from 30fF to 400fF, so as to meet the requirements of designing and manufacturing a high-frequency, low-phase noise, and wideband VCO.
In the embodiment of the present invention, as shown in fig. 2, the cutoff frequency of the heterojunction bipolar transistor is 160-200GHz, preferably 180GHz, and the maximum dc gain is 40-60, preferably 50.
As shown in fig. 3, a voltage controlled oscillator chip according to an embodiment of the present invention includes a substrate and the voltage controlled oscillator circuit disposed on the substrate.
In an embodiment of the present invention, when the first transistor module is a heterojunction bipolar transistor, the emitter line width of the heterojunction bipolar transistor is 0.8-1.2 μm, preferably 1 μm, and the emitter size is 1 μm × 10 μm. Two layers of metal interconnection lines are used for connecting devices and forming other passive devices, E, B and C are respectively emitter, base and collector connecting lines and are respectively connected with the electrodes through VIA holes, and the emitter, the base and the collector form a triode with a vertical structure from top to bottom.
In an embodiment of the present invention, when the second transistor module is a heterojunction bipolar transistor, the emitter line width of the heterojunction bipolar transistor is 0.8-1.2 μm, preferably 1 μm, and the emitter size is 1 μm × 10 μm.
In an embodiment of the present invention, a ground-signal-ground pad and a power supply bias pad are further included on the substrate.
In this embodiment, the vco chip is tested on-chip using a microwave probe station. When V is EE at-5V, the tuning voltage V TUNE When the voltage is changed between-2 and 0V, the output frequency of the circuit is 16 to 32GHz, as shown in figure 4. FIG. 5 shows the single-ended (OP) output power and operating current as a function of tuning voltage V TUNE From the curves, it can be seen that the output power is between-8 and 6dBm, and the current is less than 36mA. The ultra-wideband tuning characteristic and the higher output power characteristic are realized.
Fixed V B (V TUNE ) The end voltage is-2V, and the voltage V is changed EE The tuning characteristics of the VCO can also be achieved, as shown in fig. 6, with an output frequency range of 31.5GHz to 32.9GHz, a tuning bandwidth of about 1.4GHz, when VEE is varied in the range of-5.5V to-4.5V. Typical value of single-end output power is 5dBm, and current is smallAt 25mA, as shown in FIG. 7. At VEE of-4.7V, the spectrum at the output was measured, as in fig. 8.
The typical measurement result of the phase noise of the VCO chip circuit is shown in FIG. 9, and the phase noise of a single sideband is-73 dBc/Hz when the offset frequency is 100 kHz. The VCO circuit of the InP HBT process has the characteristics of double tuning, wide band, high output power, low phase noise and the like.
The above-mentioned embodiments are only used for illustrating the technical solutions of the present invention, and not for limiting the same; although the present invention has been described in detail with reference to the foregoing embodiments, it will be understood by those of ordinary skill in the art that: the technical solutions described in the foregoing embodiments may still be modified, or some technical features may be equivalently replaced; and such modifications or substitutions do not depart from the spirit and scope of the corresponding technical solutions of the embodiments of the present invention.
Claims (8)
1. The voltage-controlled oscillator circuit is characterized by comprising a first transistor module, a second transistor module, a coupling line and a current limiting module;
a first end of the coupling line is connected with a high-potential end of the first transistor module to form a first output end of the voltage-controlled oscillator circuit, a second end of the coupling line is connected with a controlled end of the second transistor module, a third end of the coupling line is connected with a controlled end of the first transistor module, a fourth end of the coupling line is connected with a high-potential end of the second transistor module to form a second output end of the voltage-controlled oscillator circuit, a ground end of the coupling line is grounded, a voltage input end of the coupling line is a first input end of the voltage-controlled oscillator circuit, a low-potential end of the first transistor module, a low-potential end of the second transistor module and a first end of the current limiting module are connected, and a second end of the current limiting module is a second input end of the voltage-controlled oscillator circuit; the first end of the coupling line and the second end of the coupling line are on the same side of the coupling line, and the third end of the coupling line and the fourth end of the coupling line are on the same side of the coupling line; the first end of the coupling line and the fourth end of the coupling line are respectively two ends of a first transmission line of the coupling line, and the second end of the coupling line and the third end of the coupling line are respectively two ends of a second transmission line of the coupling line;
the first input end of the voltage-controlled oscillator circuit is used for inputting a tuning voltage and a bias voltage, and the second input end of the voltage-controlled oscillator circuit is used for inputting a negative voltage;
the first transistor module comprises a first heterojunction bipolar transistor, the second transistor module comprises a second heterojunction bipolar transistor, the line width of an emitting electrode of the heterojunction bipolar transistor is 1 mu m, the size of the emitting electrode is 1 mu m multiplied by 10 mu m, and when the input voltage VEE of the current limiting module is-5V and the tuning voltage VTUNE changes between-2V and 0V, the output frequency of the voltage-controlled oscillator circuit is 16 GHz to 32GHz.
2. The voltage controlled oscillator circuit of claim 1, wherein the first transistor module comprises a first heterojunction bipolar transistor;
the collector of the first heterojunction bipolar transistor is the high-potential end of the first transistor module, the emitter of the first heterojunction bipolar transistor is the low-potential end of the first transistor module, and the base of the first heterojunction bipolar transistor is the controlled end of the first transistor module.
3. The voltage controlled oscillator circuit of claim 1, wherein the second transistor module comprises a second heterojunction bipolar transistor;
the collector of the second heterojunction bipolar transistor is a high-potential end of the second transistor module, the emitter of the second heterojunction bipolar transistor is a low-potential end of the second transistor module, and the base of the second heterojunction bipolar transistor is a controlled end of the second transistor module.
4. The voltage controlled oscillator circuit of claim 1, wherein the current limit module comprises a resistor, a first terminal of the resistor being a first terminal of the current limit module, and a second terminal of the resistor being a second terminal of the current limit module.
5. A voltage controlled oscillator circuit as claimed in claim 2 or 3, characterized in that the heterojunction bipolar transistor is made of InP-technology.
6. A voltage controlled oscillator circuit according to claim 2 or 3 characterised in that the heterojunction bipolar transistor has a cut-off frequency of 180GHz and a maximum dc gain of 50.
7. A voltage controlled oscillator chip comprising a substrate and the voltage controlled oscillator circuit of any of claims 1 to 6 disposed on the substrate.
8. The voltage controlled oscillator chip of claim 7, further comprising a ground-signal-ground pad and a power supply bias pad on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910611048.9A CN110266308B (en) | 2019-07-08 | 2019-07-08 | Voltage controlled oscillator circuit and chip |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910611048.9A CN110266308B (en) | 2019-07-08 | 2019-07-08 | Voltage controlled oscillator circuit and chip |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN110266308A CN110266308A (en) | 2019-09-20 |
| CN110266308B true CN110266308B (en) | 2023-04-18 |
Family
ID=67925038
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910611048.9A Active CN110266308B (en) | 2019-07-08 | 2019-07-08 | Voltage controlled oscillator circuit and chip |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110266308B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN118380837A (en) * | 2024-04-22 | 2024-07-23 | 香港中文大学（深圳） | Terahertz radiation source unit, chip and terahertz source output by waveguide |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055472A (en) * | 2010-12-09 | 2011-05-11 | 电子科技大学 | X-waveband voltage-controlled oscillator |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8169269B2 (en) * | 2007-09-25 | 2012-05-01 | Telefonaktiebolaget Lm Ericsson (Publ) | Hartley voltage controlled oscillator |
| WO2009145686A1 (en) * | 2008-05-30 | 2009-12-03 | Telefonaktiebolaget Lm Ericsson (Publ) | Dual-band voltage-controlled oscillator arrangement |
| CN106330097B (en) * | 2016-08-19 | 2019-02-19 | 西安电子科技大学 | InP HBT voltage controlled oscillator based on coupled transmission line |
| CN107332514A (en) * | 2017-06-30 | 2017-11-07 | 西安电子科技大学 | A kind of push-push voltage controlled oscillator without varactor |
-
2019
- 2019-07-08 CN CN201910611048.9A patent/CN110266308B/en active Active
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102055472A (en) * | 2010-12-09 | 2011-05-11 | 电子科技大学 | X-waveband voltage-controlled oscillator |
Non-Patent Citations (2)
| Title |
|---|
| Choul-Young Kim等."A K-band quadrature VCO based on asymmetric coupled transmission lines".《2008 IEEE MTT-S International Microwave Symposium Digest》.2008,363-366. * |
| 林瑞."140/220GHz毫米波压控振荡器的研究与设计".《中国优秀硕士学位论文全文数据库 信息科技辑》.2019,I135-1017. * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN110266308A (en) | 2019-09-20 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106877819B (en) | Voltage controlled oscillator based on composite resonator | |
| Bao et al. | A 21.5/43-GHz dual-frequency balanced Colpitts VCO in SiGe technology | |
| CN102545783B (en) | LC voltage-controlled oscillator (LC-VCO) with wide frequency tuning range | |
| US7268634B2 (en) | Dual-mode voltage controlled oscillator using integrated variable inductors | |
| CN101212200B (en) | Oscillator | |
| US7286024B2 (en) | Voltage-controlled oscillator with differential output | |
| US7852165B2 (en) | Capacitive-degeneration double cross-coupled voltage-controlled oscillator | |
| CN110266308B (en) | Voltage controlled oscillator circuit and chip | |
| CN116599466A (en) | Voltage-controlled oscillator based on 130nmG esi technology | |
| Al-Eryani et al. | Wideband 148–188 GHz push-push VCO using variable inductance and capacitance | |
| KR20010106076A (en) | High-quency oscillation circuit having a feedback circuit | |
| CN210297638U (en) | Stable constant-current bias CASCODE MMIC VCO | |
| US7170355B2 (en) | Voltage-controlled oscillator using current feedback network | |
| Trotta et al. | A fundamental VCO with integrated output buffer beyond 120 GHz in SiGe bipolar technology | |
| Joram et al. | A SiGe wideband VCO and divider MMIC with low gain variation for multi-band systems at 2.4 and 5.8 GHz | |
| CN110417352B (en) | Stable constant current bias CASCODE MMIC VCO | |
| Imani et al. | A 3.9 mW, 35–44/41–59.5 GHz distributed injection locked frequency divider | |
| Ettinger et al. | An integrated 20 GHz SiGe bipolar differential oscillator with high tuning range | |
| Rana et al. | An optimized 2.4 GHz CMOS LC-tank VCO with 0.55%/V frequency pushing and 516 MHz tuning range | |
| US20080309422A1 (en) | Oscillator | |
| Verdier et al. | Design and optimization of 20 GHz LC-VCOs in SiGe: C BiCMOS technology | |
| EP2636145B1 (en) | An oscillator circuit with feedback | |
| Bavisi et al. | A 9 GHz, 5 mW VCO using lumped-element transformer feedback in 150 GHz f/sub T/SiGe HBT technology | |
| Kurachi et al. | A 4-GHz band ultra-wideband voltage controlled oscillator IC using 0.35 μm SiGe BiCMOS technology | |
| Rohde et al. | Configurable ultra low noise ultra wideband power efficient VCOs |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |