CN116599466A - Voltage-controlled oscillator based on 130nmG esi technology - Google Patents
Voltage-controlled oscillator based on 130nmG esi technology Download PDFInfo
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- CN116599466A CN116599466A CN202310298521.9A CN202310298521A CN116599466A CN 116599466 A CN116599466 A CN 116599466A CN 202310298521 A CN202310298521 A CN 202310298521A CN 116599466 A CN116599466 A CN 116599466A
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- voltage
- controlled oscillator
- heterojunction bipolar
- inductor
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- 238000005516 engineering process Methods 0.000 title description 10
- 239000003990 capacitor Substances 0.000 claims abstract description 45
- 238000000034 method Methods 0.000 claims abstract description 15
- 238000006880 cross-coupling reaction Methods 0.000 claims description 8
- 230000008878 coupling Effects 0.000 abstract description 3
- 238000010168 coupling process Methods 0.000 abstract description 3
- 238000005859 coupling reaction Methods 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 230000010355 oscillation Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 9
- 238000004088 simulation Methods 0.000 description 6
- 238000004891 communication Methods 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1206—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification
- H03B5/1218—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device using multiple transistors for amplification the generator being of the balanced type
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B5/00—Generation of oscillations using amplifier with regenerative feedback from output to input
- H03B5/08—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance
- H03B5/12—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device
- H03B5/1231—Generation of oscillations using amplifier with regenerative feedback from output to input with frequency-determining element comprising lumped inductance and capacitance active element in amplifier being semiconductor device the amplifier comprising one or more bipolar transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
- H03B2200/00—Indexing scheme relating to details of oscillators covered by H03B
- H03B2200/0002—Types of oscillators
- H03B2200/0008—Colpitts oscillator
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)
Abstract
The invention belongs to the field of radio frequency electronics, and particularly provides a voltage-controlled oscillator based on a 130nmG esi process. The invention creatively improves the traditional Colpitts voltage-controlled oscillator in a differential mode, and adds a coupling capacitor C0 between the collector and the emitter of two heterojunction bipolar transistors of the oscillator to increase the amplitude of the output signal of the voltage-controlled oscillator; meanwhile, an inductor L0 is added between an emitter and a capacitor node of the heterojunction bipolar transistor to change the phase and increase the transconductance of the transistor, so that the oscillation starting condition of the voltage-controlled oscillator is relaxed; in addition, the inductor Lp in the resonant circuit adopts an octagonal ring-like symmetrical inductor structure so as to increase the Q value and reduce the phase noise; finally, the invention realizes the effects of lower phase noise, wider tuning range, larger amplitude, better starting condition and the like; and the device has higher working frequency and has important significance for realizing the high-performance voltage-controlled oscillator.
Description
Technical Field
The invention belongs to the field of radio frequency electronics, and particularly relates to a voltage-controlled oscillator based on a 130nmG esi process.
Background
In recent years, the high-speed development of the wireless communication market has placed higher demands on radio frequency transceivers; as one of the most important components in any communication system, a voltage controlled oscillator is a critical component of a phase locked loop in a radio frequency transceiver that can generate a local oscillator signal for use in frequency conversion in a frequency synthesizer; the technical indexes of phase noise, tuning range, tuning gain, amplitude, working frequency and the like of the voltage-controlled oscillator have very important influence on the performance of the wireless communication transceiver system.
Currently, a voltage-controlled oscillator can be mainly realized by two structures, one is a ring oscillator, and the other is a capacitive-inductive resonant oscillator; the ring oscillator has larger amplitude than the capacitive-inductive resonant oscillator, but has strong switching nonlinear effect, so that the capacitive-inductive resonant oscillator is widely applied when the frequency requirement is higher. In order to improve the performance of capacitive-inductive resonant oscillators, a number of topologies have been proposed in the industry, in which Colpitts-type voltage-controlled oscillators possess excellent low phase noise characteristics, but which require a large transconductance to meet their start-up conditions.
Disclosure of Invention
Aiming at the problems or the defects of the prior art, the invention provides a voltage-controlled oscillator based on a 130nm GeSi technology, which increases the transconductance and the amplitude of the voltage-controlled oscillator by adding an inductor and an emitter-collector cross coupling capacitor, so that the voltage-controlled oscillator has the excellent characteristics of larger transconductance, low phase noise, high output frequency and larger amplitude.
In order to achieve the above purpose, the invention adopts the following technical scheme:
a voltage controlled oscillator based on a 130nm GeSi process, comprising: two inductances Lp, two resistances Rp, two collector-emitter cross-coupling capacitances C0, two capacitances C1, two capacitances C2, two heterojunction bipolar transistors Q1 and Q2, two inductances L0, one resistance Rb, two resistances RL and two variable capacitances Cvar; the method is characterized in that:
the two inductors Lp are provided by an octagonal ring-shaped symmetrical inductor, the middle tap of each inductor is connected with a power supply voltage VDD, and the two output ends of each inductor are respectively connected with a differential output port +Vout and a differential output port-Vout of the voltage-controlled oscillator; one end of the two resistors Rp is uniformly connected with the power supply voltage VDD, and the other end of the two resistors Rp is respectively connected with the differential output ports +Vout and-Vout of the voltage-controlled oscillator; the two collector-emitter cross-coupling capacitors C0 are respectively connected between the emitter of the heterojunction bipolar transistor Q1 and the collector of the heterojunction bipolar transistor Q2 in a bridging manner, and between the collector of the heterojunction bipolar transistor Q1 and the emitter of the heterojunction bipolar transistor Q2; two ends of the two capacitors C2 are respectively connected with the capacitor C1 after being connected in series, and the other ends of the two capacitors C1 are respectively connected with the collectors of the heterojunction bipolar transistors Q1 and Q2; the connection point of the two capacitors C2 and the capacitor C1 is respectively connected with an inductor L0 to the emitter of the heterojunction bipolar transistor, and simultaneously is respectively connected with a resistor RL to the ground GND; one end of the resistor Rb is connected with the grid bias voltage Vb, and the other end is connected with the base electrodes of the two heterojunction bipolar transistors; one end of each variable capacitor Cvar is uniformly connected with the tuning voltage Vtune, and the other end of each variable capacitor Cvar is respectively connected with the differential output ports +Vout and-Vout of the voltage-controlled oscillator.
In summary, the invention has the following beneficial effects:
the invention provides a voltage-controlled oscillator based on 130nm GeSi technology, which creatively improves the traditional differential Colpitts voltage-controlled oscillator, and adds a coupling capacitor C0 between the collector and the emitter of two heterojunction bipolar transistors of the oscillator to increase the amplitude of the output signal of the voltage-controlled oscillator; meanwhile, an inductor L0 is added between an emitter and a capacitor node of the heterojunction bipolar transistor to change the phase and increase the transconductance of the transistor, so that the vibration condition of the Colpitts voltage-controlled oscillator is relaxed; in addition, the inductor Lp in the resonant circuit adopts an octagonal ring-like symmetrical inductor structure so as to increase the Q value and reduce the phase noise; finally, the invention realizes the effects of lower phase noise, wider tuning range, larger amplitude, better starting condition and the like through the design of the quasi-octagonal annular symmetrical inductor, the collector-emitter cross coupling capacitor and the inductor between the emitter and the capacitor node; moreover, the GeSi technology is used, so that the working frequency is higher; it can be seen that the invention has great significance for the realization of high-performance voltage-controlled oscillators.
Drawings
Fig. 1 is a circuit configuration diagram of a voltage controlled oscillator based on 130nm GeSi process in the present invention.
Fig. 2 is a circuit configuration diagram of the variable capacitor according to the present invention.
Fig. 3 is a diagram showing simulation results of phase noise of a voltage controlled oscillator based on a 130nm GeSi process in an embodiment of the present invention.
Fig. 4 is a diagram showing simulation results of an output frequency range of a voltage controlled oscillator based on a 130nm GeSi process in an embodiment of the present invention.
Fig. 5 is a diagram showing simulation results of output waveforms of a voltage controlled oscillator based on a 130nm GeSi process in an embodiment of the present invention.
Fig. 6 is a schematic diagram of a voltage controlled oscillator based on a 130nm GeSi process in an embodiment of the invention.
Fig. 7 is a graph showing the phase noise test result of a voltage controlled oscillator based on a 130nm GeSi process in an embodiment of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantageous effects of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and examples.
The embodiment provides a voltage-controlled oscillator based on 130nm GeSi technology, the structure of which is shown in figure 1, comprising: two inductances Lp, two resistances Rp, two collector-emitter cross-coupling capacitances C0, two capacitances C1, two capacitances C2, two heterojunction bipolar transistors Q1 and Q2, two inductances L0, one resistance Rb, two resistances RL and two variable capacitances Cvar; the two inductors Lp are provided by an octagonal ring-shaped symmetrical inductor, the middle tap of each inductor is connected with a power supply voltage VDD, and the two output ends of each inductor are respectively connected with a differential output port +Vout and a differential output port-Vout of the voltage-controlled oscillator; one end of the two resistors Rp is uniformly connected with the power supply voltage VDD, and the other end of the two resistors Rp is respectively connected with the differential output ports +Vout and-Vout of the voltage-controlled oscillator; the two collector-emitter cross-coupling capacitors C0 are respectively connected between the emitter of the heterojunction bipolar transistor Q1 and the collector of the heterojunction bipolar transistor Q2 in a bridging manner, and between the collector of the heterojunction bipolar transistor Q1 and the emitter of the heterojunction bipolar transistor Q2; two ends of the two capacitors C2 are respectively connected with the capacitor C1 after being connected in series, and the other ends of the two capacitors C1 are respectively connected with the collectors of the heterojunction bipolar transistors Q1 and Q2; the connection point of the two capacitors C2 and the capacitor C1 is respectively connected with an inductor L0 to the emitter of the heterojunction bipolar transistor, and simultaneously is respectively connected with a resistor RL to the ground GND; one end of the resistor Rb is connected with the grid bias voltage Vb, and the other end is connected with the base electrodes of the two heterojunction bipolar transistors; one end of each variable capacitor Cvar is uniformly connected with the tuning voltage Vtune, and the other end of each variable capacitor Cvar is respectively connected with the differential output ports +Vout and-Vout of the voltage-controlled oscillator.
Further, in this embodiment, as shown in fig. 2, the structure of the variable capacitor Cvar is composed of 8 resistors R1, 3 resistors R2, 8 capacitors C3 and 8 varactors MOS transistors; the parameters of each component are as follows: the supply voltage VDD is 3.3V, the inductance value of the inductor Lp is 0.1nH, the resistance value of the resistor Rp is 0.3 Ω, the capacitance value of the capacitor C0 is 0.02pF, the capacitance value of the capacitor C1 is 0.07pF, the capacitance value of the capacitor C2 is 0.016pF, the inductance value of the inductor L0 is 0.08nH, the resistance value of the resistor RL is 500 Ω, the gate bias voltage Vb is 2.4V, the resistance value of the resistor Rb is 5000 Ω, the resistance value of the resistor R1 is 10000 Ω, the resistance value of the resistor R2 is 5000 Ω, and the capacitance value of the capacitor C3 is 0.04pF.
In terms of working principle:
the invention provides a voltage-controlled oscillator based on 130nm GeSi technology, because the circuit adopts the GeSi technology and belongs to a heterojunction structure, the characteristic frequency ft of a transistor can be improved, and the output frequency of the circuit can be improved; meanwhile, the GeSi technology has better simulation characteristics and can reduce phase noise. As shown in fig. 1, the loops of the capacitors C0, C1, C2 and the inductors Lp, L0 form a resonant cavity of the voltage-controlled oscillator, and at the resonant frequency, the impedance magnitudes of the capacitors and the inductors are equal and opposite, so that the gain from input to output becomes infinite for the system, so that the circuit can amplify the component with the frequency equal to the resonant frequency ω1 in noise to form oscillation. If the device is an ideal device, the impedance is infinite at the resonant frequency, and the circuit has an infinite quality factor Q; since the actual inductance contains a resistive component, Q of the circuit is limited.
The inductance Lp of the resonant circuit adopts an octagonal ring-like structure, the inductance value is moderate, and the frequency of the maximum Q value is near the working frequency; compared with a single-ended inductor, the symmetrical inductor under the differential waveform has a larger Q value, so that the inductor in the invention can enable the inductance-capacitance oscillation circuit to obtain a higher Q value, and the phase noise of the whole circuit is smaller. As shown in fig. 3, which shows a phase noise simulation diagram of the present invention, it can be seen that the phase noise of the present invention can be maintained below-101 dBc/Hz when the frequency drift is 1 MHz.
Since the inductance value is fixed, the circuit adjusts the output frequency of the VCO by adjusting the magnitude of the capacitance value. As shown in fig. 1, in order to provide a wider frequency modulation range, the invention uses four groups of parallel varactors to form a variable capacitor; the circuit of the invention is simulated, and the output frequency range is shown in fig. 4, and the tuning range provided by the invention is 37.1-38.1 GHz.
In the present invention, a coupling capacitor C0 is added between the collector and the emitter of the two heterojunction bipolar transistors Q1 and Q2 to increase the amplitude of the output signal of the oscillator, as shown in fig. 5, which is a simulation diagram of the output waveform of the circuit, it can be seen that the amplitude of the output signal of the present invention is about 2V. And, the inductance L0 is added between the emitter electrodes of the two heterojunction bipolar transistors Q1 and Q2 and the connection nodes of the capacitors C1 and C2, so that the transconductance of the transistors can be increased by phase transformation, and the vibration starting condition of the Colpitts voltage-controlled oscillator is relaxed.
Based on the voltage-controlled oscillator based on the 130nm GeSi technology, under the condition of normal operation, the capacitance of the variable capacitor is adjusted by adjusting the value of the tuning voltage Vtune, and along with the continuous change of the value of the Vtune, the capacitance of the variable capacitor is also continuously changed; and detecting whether the phase-locked loop circuit can be locked or not in the whole variation range of the Vtune.
Fig. 6 is a physical diagram of a voltage-controlled oscillator based on a 130nm GeSi process according to the present embodiment, and when the working frequency is 37.1094GHz, a phase noise characteristic curve of the voltage-controlled oscillator is shown in fig. 7; it can be seen that the phase noise of the present invention is-102.94 dBc/Hz at 1MHz shifted from the center frequency 37.1094 GHz.
While the invention has been described in terms of specific embodiments, any feature disclosed in this specification may be replaced by alternative features serving the equivalent or similar purpose, unless expressly stated otherwise; all of the features disclosed, or all of the steps in a method or process, except for mutually exclusive features and/or steps, may be combined in any manner.
Claims (1)
1. A voltage controlled oscillator based on a 130nm GeSi process, comprising: two inductances Lp, two resistances Rp, two collector-emitter cross-coupling capacitances C0, two capacitances C1, two capacitances C2, two heterojunction bipolar transistors Q1 and Q2, two inductances L0, one resistance Rb, two resistances RL and two variable capacitances Cvar; the method is characterized in that:
the two inductors Lp are provided by an octagonal ring-shaped symmetrical inductor, the middle tap of each inductor is connected with a power supply voltage VDD, and the two output ends of each inductor are respectively connected with a differential output port +Vout and a differential output port-Vout of the voltage-controlled oscillator; one end of the two resistors Rp is uniformly connected with the power supply voltage VDD, and the other end of the two resistors Rp is respectively connected with the differential output ports +Vout and-Vout of the voltage-controlled oscillator; the two collector-emitter cross-coupling capacitors C0 are respectively connected between the emitter of the heterojunction bipolar transistor Q1 and the collector of the heterojunction bipolar transistor Q2 in a bridging manner, and between the collector of the heterojunction bipolar transistor Q1 and the emitter of the heterojunction bipolar transistor Q2; two ends of the two capacitors C2 are respectively connected with the capacitor C1 after being connected in series, and the other ends of the two capacitors C1 are respectively connected with the collectors of the heterojunction bipolar transistors Q1 and Q2; the connection point of the two capacitors C2 and the capacitor C1 is respectively connected with an inductor L0 to the emitter of the heterojunction bipolar transistor, and simultaneously is respectively connected with a resistor RL to the ground GND; one end of the resistor Rb is connected with the grid bias voltage Vb, and the other end is connected with the base electrodes of the two heterojunction bipolar transistors; one end of each variable capacitor Cvar is uniformly connected with the tuning voltage Vtune, and the other end of each variable capacitor Cvar is respectively connected with the differential output ports +Vout and-Vout of the voltage-controlled oscillator.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202310298521.9A CN116599466A (en) | 2023-03-24 | 2023-03-24 | Voltage-controlled oscillator based on 130nmG esi technology |
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| CN202310298521.9A CN116599466A (en) | 2023-03-24 | 2023-03-24 | Voltage-controlled oscillator based on 130nmG esi technology |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117240220A (en) * | 2023-11-13 | 2023-12-15 | 成都明夷电子科技有限公司 | Radio frequency voltage controlled oscillator and electronic equipment |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN117240220A (en) * | 2023-11-13 | 2023-12-15 | 成都明夷电子科技有限公司 | Radio frequency voltage controlled oscillator and electronic equipment |
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