CN117219995A - Ultra-wideband miniaturized thin film band-pass filter based on ceramic substrate - Google Patents
Ultra-wideband miniaturized thin film band-pass filter based on ceramic substrate Download PDFInfo
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- CN117219995A CN117219995A CN202311471778.6A CN202311471778A CN117219995A CN 117219995 A CN117219995 A CN 117219995A CN 202311471778 A CN202311471778 A CN 202311471778A CN 117219995 A CN117219995 A CN 117219995A
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- 239000000758 substrate Substances 0.000 title claims abstract description 42
- 239000010409 thin film Substances 0.000 title claims abstract description 26
- 239000000919 ceramic Substances 0.000 title claims abstract description 12
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 27
- 238000001465 metallisation Methods 0.000 claims abstract description 15
- 230000005284 excitation Effects 0.000 claims description 12
- 239000002184 metal Substances 0.000 claims description 4
- 238000000034 method Methods 0.000 abstract description 8
- 230000008878 coupling Effects 0.000 abstract description 6
- 238000010168 coupling process Methods 0.000 abstract description 6
- 238000005859 coupling reaction Methods 0.000 abstract description 6
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- 238000013461 design Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 9
- 238000012545 processing Methods 0.000 description 7
- 239000000463 material Substances 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
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Abstract
The invention relates to the technical field of filters, in particular to an ultra-wideband miniaturized thin film band-pass filter based on a ceramic substrate; an alumina ceramic substrate; a metallization plane arranged on one surface of the alumina ceramic substrate; a plurality of quarter-wave oscillators, wherein the quarter-wave oscillators are arranged on the other surface of the alumina ceramic substrate; the open end of the quarter-wave oscillator is provided with a metallized hole, and the metallized hole is communicated with the metallized plane; and loading inductance between two adjacent quarter-wave resonators at the outermost side. The invention has the beneficial effects that: in order to solve the problem that the process limit cannot meet the relative bandwidth requirement yet, a parallel inductor is added between the two outermost resonators, and compared with a traditional band-pass filter, the coupling coefficient is larger at the same resonator distance, the relative bandwidth is wider, the relative bandwidth limit which cannot be achieved by the traditional interdigital structure is realized, and the widest relative bandwidth is improved from 40% to 60%.
Description
Technical Field
The invention relates to the technical field of filters, in particular to an ultra-wideband miniaturized thin film band-pass filter based on a ceramic substrate.
Background
The film filter has the advantages of high use frequency, easy integration, compact structure, light weight, low processing cost and the like, and is widely used in communication systems. Thin film bandpass filters are typically fabricated using high-precision thin film processing techniques using high-k dielectric substrates.
Thin film bandpass filters with small volumes and high relative bandwidths have great advantages in band selection. The relative bandwidth of a common alumina ceramic substrate based on the thickness of 0.254mm can reach 20% by adopting a traditional half-wavelength comb-shaped structure, and the relative bandwidth of a traditional quarter-wavelength resonator interdigital thin-film band-pass filter can reach 40%.
At present, if the thin film bandpass filter of the conventional quarter-wavelength resonator interdigital structure is required to meet the requirement of the thin film bandpass filter with the relative bandwidth up to 60%, as shown in fig. 6, the design of the coupling distance between the first step and the second step is only 20um, but the design requirement of the distance between the thin film processing lines is usually greater than 35um, and meanwhile, the requirement of the dimensional accuracy of the distance is very high, so that the processing is continued on the conventional quarter-wavelength resonator interdigital structure, the processing difficulty is high, and the qualification rate cannot be guaranteed.
Therefore, on the basis of the traditional interdigital structure of the quarter-wave resonator, the research on a thin film band-pass filter with small volume and high relative bandwidth is of great significance.
Disclosure of Invention
The invention aims to provide an ultra-wideband miniaturized thin-film band-pass filter, which improves the relative bandwidth on the basis of not changing the substrate material and not improving the process difficulty and designs a thin-film band-pass filter structure with small volume and high relative bandwidth.
To achieve the above object, the present invention adopts an ultra-wideband miniaturized thin film bandpass filter based on a ceramic substrate, comprising
An alumina ceramic substrate;
a metallization plane arranged on one surface of the alumina ceramic substrate;
a plurality of quarter-wave oscillators, wherein the quarter-wave oscillators are arranged on the other surface of the alumina ceramic substrate;
the open end of the quarter-wave oscillator is provided with a metallized hole, and the metallized hole is communicated with the metallized plane;
and loading inductance between two adjacent quarter-wave resonators at the outermost side.
Further, the open-end metallizations Kong Cheng of two adjacent quarter-wavelength resonators on the outermost side of the quarter-wavelength oscillator are distributed in the same direction, and the other quarter-wavelength oscillator metallizations are alternately distributed in opposite directions.
Further, each of the quarter-wave oscillator metallizations Kong Cheng is distributed in the same direction, and each of the remaining adjacent quarter-wave oscillators is loaded with an inductance.
Further, the number of the quarter wave oscillators is 13.
Further, the two outermost quarter-wave resonators, wherein the open end of one quarter-wave resonator is connected with the first metal signal excitation port, and the open end of the other quarter-wave resonator is connected with the second metal signal excitation port.
The invention has the beneficial effects that: in order to solve the problem that the process limit cannot meet the relative bandwidth requirement yet, a parallel inductor is added between the two outermost resonators, and compared with a traditional band-pass filter, the coupling coefficient is larger at the same resonator distance, the relative bandwidth is wider, the relative bandwidth limit which cannot be achieved by the traditional interdigital structure is realized, and the widest relative bandwidth is improved from 40% to 60%.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions in the prior art, the drawings that are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained from these drawings without inventive effort for a person skilled in the art.
Fig. 1 is a schematic structural diagram of an ultra-wideband miniaturized thin-film bandpass filter according to an embodiment of the invention.
Fig. 2 is a schematic diagram of a resonator prior to addition of a loading inductor according to an embodiment of the invention.
Fig. 3 is a schematic diagram of a resonator after addition of a loading inductor according to an embodiment of the invention.
Fig. 4 is a schematic diagram of simulation after adding a loading inductor according to an embodiment of the invention.
Fig. 5 is a schematic diagram of a resonator structure after adding a loading inductor according to another embodiment of the invention.
Fig. 6 is a schematic diagram of a structure of a modified conventional interdigital filter, in which fig. 6 (a) is a front view of the filter and fig. 6 (b) is a back view of the filter.
The device comprises a 10-alumina ceramic substrate, a 20-first loading quarter-wavelength oscillator, a 21-first metallized hole, a 30-second loading quarter-wavelength oscillator, a 31-second metallized hole, a 40-quarter-wavelength oscillator, a 41-third metallized hole, a 50-first loading inductor, a 60-second loading inductor, a 70-first signal excitation add port and a 80-second signal excitation add port.
Detailed Description
Example 1
Referring to fig. 1 to 3, fig. 1 is a schematic structural diagram of an ultra-wideband miniaturized thin-film bandpass filter, fig. 2 is a schematic diagram of a resonator before loading an inductor, and fig. 3 is a schematic diagram of a resonator after loading an inductor.
The invention provides an ultra-wideband miniaturized thin film band-pass filter: the device comprises an alumina ceramic substrate 10, a metallization plane, two first loading quarter-wave oscillators 20, two second loading quarter-wave oscillators 30, a plurality of quarter-wave oscillators 40, a first loading inductor 50 and a second loading inductor 60, wherein the metallization plane is arranged on the rear plane of the alumina ceramic substrate 10, and each quarter-wave oscillator 40 is respectively arranged on the front plane of the alumina ceramic substrate 10.
As shown in fig. 1, two first loading quarter-wave oscillators 20 are disposed on one side of the front plane of the alumina ceramic substrate 10, two second loading quarter-wave oscillators 30 are disposed on the other side of the front plane of the alumina ceramic substrate 10, the first loading inductor 50 is connected between the two first loading quarter-wave oscillators 20, and the second loading inductor 60 is connected between the two second loading quarter-wave oscillators 30.
The open ends of the first loaded quarter wave oscillators 20 have first metallized holes 21, and the open ends of the two first loaded quarter wave oscillators 20 are in the same direction. The first loaded quarter wave oscillator 20 is connected to the metallization plane provided on the rear side of the alumina ceramic substrate 10 through the first metallization hole 21.
The open ends of the second loaded quarter wave oscillators 30 have second metallized holes 31, and the open ends of the two second loaded quarter wave oscillators 30 are in the same direction. The second loaded quarter wave oscillator 30 is connected to the metallized plane provided on the rear side of the alumina ceramic substrate 10 through the second metallized hole 31.
The open ends of the quarter wave oscillators 40 have third metallized holes 41, and the open end directions of the open ends of a plurality of the quarter wave oscillators 40 are staggered. The quarter wave oscillator 40 is connected to the metallized plane provided on the rear side of the alumina ceramic substrate 10 through the third metallized hole 41.
The alumina ceramic substrate 10 is provided with a first signal excitation port 70, and the first signal excitation port 70 is connected with the first loading quarter-wavelength oscillator 20 outside the alumina ceramic substrate 10, and is used for enhancing an excitation signal.
The alumina ceramic substrate 10 is provided with a second signal excitation port 80, and the second signal excitation port 80 is connected with the second loading quarter-wavelength oscillator 30 outside the alumina ceramic substrate 10, and is used for enhancing an excitation signal.
The purpose of widening the bandwidth of the passband is achieved; as shown in fig. 2 and fig. 3, the resonator inductance after adding the parallel inductor L4 is reduced, the coupling is enhanced, the relative bandwidth is increased, the relative bandwidth is improved on the basis of not changing the material of the alumina ceramic substrate 10 and not improving the process difficulty, the design can be performed according to different technical indexes, the ultra-wideband miniaturized thin-film band-pass filter has the advantages of small volume and high relative bandwidth, and the requirement of the thin-film band-pass filter with the relative bandwidth up to 60% is met.
As shown in fig. 4, the passband bandwidth is 8.7-15.7GHz, 59% of the relative bandwidth. The design allowance is satisfied, and the line distance satisfies the technological requirement. The improvement is effective.
As shown in fig. 6, if the conventional design meeting the relative bandwidth of up to 60% is only 20um for the first-order and second-order coupling spacing, the frequency shift occurs in actual production due to the tolerance of ±0.1 of the dielectric constant of the ceramic substrate, and the passband margins of 200-300MHz are left for the high and low frequencies in the general design, so that the bandwidth of the model is limited and cannot be widened. Therefore, the design of the coupling distance between the first step and the second step is only that the outline of the structure with the distance of 20um is difficult to process, the requirement on the dimensional accuracy of the distance is very high, the processing difficulty is very high in engineering, the qualification rate cannot be guaranteed, and the distance design requirement of the film processing line is generally larger than 35um.
Example two
As shown in fig. 5, an ultra-wideband miniaturized thin film bandpass filter based on a ceramic substrate,
an alumina ceramic substrate; a metallization plane arranged on one surface of the alumina ceramic substrate; a plurality of quarter-wave oscillators, wherein the quarter-wave oscillators are arranged on the other surface of the alumina ceramic substrate; the open end of the quarter-wave oscillator is provided with a metallized hole, and the metallized hole is communicated with the metallized plane; an inductor is loaded between two adjacent quarter-wave resonators at the outermost side, the metallizations Kong Cheng of each quarter-wave oscillator are distributed in the same direction, and an inductor is loaded between each other adjacent quarter-wave oscillator. The purpose of widening the bandwidth of the passband is achieved; the method realizes that the relative bandwidth is improved on the basis of not changing the material of the alumina ceramic substrate and not improving the process difficulty, and can select the unable order to design according to different technical indexes.
The above disclosure is illustrative of a preferred embodiment of the invention and is not to be construed as limiting the scope of the invention, but rather as a whole or in part as a result of the following claims.
Claims (5)
1. An ultra-wideband miniaturized thin-film bandpass filter based on a ceramic substrate, characterized by comprising
An alumina ceramic substrate;
a metallization plane arranged on one surface of the alumina ceramic substrate;
a plurality of quarter-wave oscillators, wherein the quarter-wave oscillators are arranged on the other surface of the alumina ceramic substrate;
the open end of the quarter-wave oscillator is provided with a metallized hole, and the metallized hole is communicated with the metallized plane;
and loading inductance between two adjacent quarter-wave resonators at the outermost side.
2. The ultra-wideband miniaturized thin-film bandpass filter based on ceramic substrates of claim 1,
the open-end metallizations Kong Cheng of two adjacent quarter-wavelength resonators on the outermost side of the quarter-wavelength oscillator are distributed in the same direction, and the other quarter-wavelength oscillator metallizations are alternately distributed in opposite directions.
3. The ultra-wideband miniaturized thin-film bandpass filter based on ceramic substrates of claim 1,
each of the quarter wave oscillator metallizations Kong Cheng is distributed in the same direction and each of the remaining adjacent quarter wave oscillators is loaded with an inductance therebetween.
4. The ultra-wideband miniaturized thin-film bandpass filter based on a ceramic substrate according to claim 2 or 3,
the number of quarter wave oscillators is 13.
5. The ultra-wideband miniaturized thin-film bandpass filter based on a ceramic substrate according to claim 2 or 3,
and the two outermost quarter-wavelength resonators, wherein the open end of one quarter-wavelength resonator is connected with a first metal signal excitation port, and the open end of the other quarter-wavelength resonator is connected with a second metal signal excitation port.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202311471778.6A CN117219995B (en) | 2023-11-07 | 2023-11-07 | Ultra-wideband miniaturized thin film band-pass filter based on ceramic substrate |
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| CN202311471778.6A CN117219995B (en) | 2023-11-07 | 2023-11-07 | Ultra-wideband miniaturized thin film band-pass filter based on ceramic substrate |
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| CN117219995B CN117219995B (en) | 2024-01-30 |
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| JP2003304103A (en) * | 2002-04-09 | 2003-10-24 | Matsushita Electric Works Ltd | Band pass filter |
| US6791403B1 (en) * | 2003-03-19 | 2004-09-14 | Raytheon Company | Miniature RF stripline linear phase filters |
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| CN102055472A (en) * | 2010-12-09 | 2011-05-11 | 电子科技大学 | X-waveband voltage-controlled oscillator |
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| CN107331926A (en) * | 2017-07-06 | 2017-11-07 | 中国人民解放军国防科学技术大学 | Micro-strip double-passband filter |
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| CN107331926A (en) * | 2017-07-06 | 2017-11-07 | 中国人民解放军国防科学技术大学 | Micro-strip double-passband filter |
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| CN117219995B (en) | 2024-01-30 |
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