CN102457226A - 57 GHz voltage controlled oscillator used for millimeter wave communication - Google Patents
57 GHz voltage controlled oscillator used for millimeter wave communication Download PDFInfo
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- CN102457226A CN102457226A CN201010512276XA CN201010512276A CN102457226A CN 102457226 A CN102457226 A CN 102457226A CN 201010512276X A CN201010512276X A CN 201010512276XA CN 201010512276 A CN201010512276 A CN 201010512276A CN 102457226 A CN102457226 A CN 102457226A
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Abstract
The invention relates to a 57 GHz voltage controlled oscillator used for millimeter wave communication. The 57 GHz voltage controlled oscillator comprises a resonant loop, a negative resistance generation circuit and an output matching circuit, wherein the resonant loop is used for determining oscillation frequency; the negative resistance generation circuit is used for generating resistive component to balance out the resistive component in the resonant loop; the output matching circuit is used for matching output impedance to 50 ohms. The 57 GHz voltage controlled oscillator has a simple structure; the size of the output frequency is determined by the resonant loop; positive resistance of the resonant loop is balanced out by negative resistance generated by the negative resistance generation circuit so as to generate resonance; the output matching circuit realizes power matching; signal output in a frequency range of 56.6-57.3GHz is finally realized; the requirements of a double-conversion radio transceiver of 60GHz millimeter wave frequency band are met; a local oscillator signal is provided for the millimeter wave radio transceiver; and thus, up-conversion and down-conversion of the signal are finished.
Description
Technical field
The present invention relates to be applied to the 60GHz millimeter-wave technology field of ultrahigh speed Wireless Personal Network WPAN of new generation (Wireless Personal Area Network), be specifically related to a kind of 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator.
Background technology
60GHz millimeter wave radio communication up to the transmission rate of 4Gbps and the bandwidth of 5GHz, becomes the one preferred technique of ultrahigh speed Wireless Personal Network of future generation with it, especially has huge market prospects in field of consumer electronics such as no compression high definition video wireless transmission.The 60GHz technology has become international research focus, and China has opened the 59-64GHz frequency range.
The advantage of 60GHz radio communication is the transmission rate that can realize up to the Gbps magnitude.This technology will become the mainstream technology of ultrahigh speed Wireless Personal Network.Consumer electronics manufacturers such as NEC, Samsung, Panasonic and LG have set up WirelessHD alliance jointly and have promoted the application of 60GHz technology in no compression high definition video transmission at present, visible its huge market potential.Present 60GHz technology in the world becomes the focus of academia and industrial quarters concern; ISSCC (International Solid State Circuits Conference) is offered special topic every year and is collected the relevant paper of 60GHz technology, and the difficult point of many aspects such as the design of 60GHz millimetre-wave circuit, test receives extensive concern.The 60GHz frequency spectrum of China is open at present; But because technical difficulty is bigger; Application study to this frequency range is less relatively, and voltage controlled oscillator is as " heart " of whole wireless transceiver, and its performance index have material impact for the performance of whole transceiver.
Summary of the invention
The problem that the present invention will solve provides a kind of 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator; Satisfy the demand of 60GHz millimeter wave frequency band double conversion transceiver; For the millimeter wave transceiver provides local oscillation signal; Thereby accomplish the up-conversion and the down-conversion of signal, its frequency coverage is 56.6-57.3GHz.
In order to achieve the above object, the technical scheme of the present invention's employing is: a kind of 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator comprises:
Resonant tank is used for confirming frequency of oscillation;
Negative resistance produces circuit, is used for producing the resistive composition of offsetting resonant tank;
Output matching circuit is used for output impedance is matched to 50 ohm.
In the such scheme; Said resonant tank produces circuit through first capacitance and said negative resistance and is connected; Said negative resistance produces circuit and is connected through second capacitance with said output matching circuit; Said output matching circuit is connected with an end of 50 ohm, and the other end of said 50 ohm is connected with ground.
In the such scheme, said resonant tank comprises a pHEMT transistor, first microstrip transmission line and second microstrip transmission line; Transistorized source electrode of a said pHEMT and drain electrode short circuit, and link to each other the adjustable DC power supply of another termination-3.3-3.0V of said first microstrip transmission line with an end of first microstrip transmission line; One section of the transistorized grid of a said pHEMT and second microstrip transmission line links to each other the adjustable DC power supply of another termination-3.3-3.0V of said second microstrip transmission line; Transistorized source electrode of a said pHEMT and drain electrode short circuit, and be connected through first capacitance and negative resistance generation circuit.
In the such scheme, a said pHEMT transistor is that a long L of grid is that 0.15 micron, grid width W are the pHEMT transistor of 80 microns diode connected mode; Said first microstrip transmission line and second microstrip transmission line are that width W is that 15 microns, length L are that 360 microns equivalence is the microstrip transmission line of inductance.
In the such scheme, said negative resistance produces circuit and comprises the 2nd pHEMT transistor, and said the 2nd pHEMT transistor drain connects an end of the 3rd microstrip transmission line, and the other end of said the 3rd microstrip transmission line is connected with the DC power supply of 3.3V; Said the 2nd pHEMT transistor drain is connected with output matching circuit through second capacitance; The transistorized source electrode of said the 2nd pHEMT connects an end of the 4th microstrip transmission line, and the other end of said the 4th microstrip transmission line links to each other with ground; The transistorized grid of said the 2nd pHEMT links to each other with an end of the 5th microstrip transmission line, and the other end of the 5th microstrip transmission line links to each other with an end of the 6th microstrip transmission line and an end of the 7th microstrip transmission line respectively; The other end of said the 6th microstrip transmission line links to each other with the 0.3V DC power supply, and the other end of said the 7th microstrip transmission line links to each other with resonant tank through first capacitance.
In the such scheme, said the 2nd pHEMT transistor is that the long L of grid is that 0.15 micron, grid width W are 100 microns transistor; Said the 3rd microstrip transmission line is that one section width W is that 15 microns, length L are 420 microns microstrip transmission line; Said the 4th microstrip transmission line is that one section width W is that 40 microns, length L are 410 microns microstrip transmission line; Said the 5th microstrip transmission line is that one section width W is that 15 microns, length L are 450 microns microstrip transmission line; Said the 6th microstrip transmission line is that one section width W is that 15 microns, length L are 430 microns microstrip transmission line; Said the 7th microstrip transmission line is that one section width W is that 15 microns, length L are 120 microns microstrip transmission line.
In the such scheme, said output matching circuit comprises the 8th microstrip transmission line, the 9th microstrip transmission line and the tenth microstrip transmission line; One end of said the 8th microstrip transmission line produces circuit through second capacitance and negative resistance and is connected, and the other end of said the 8th microstrip transmission line links to each other with an end of the 9th microstrip transmission line and an end of the tenth microstrip transmission line respectively; The other end of said the 9th microstrip transmission line is unsettled, and the other end of said the tenth microstrip transmission line links to each other with 50 ohm.
In the such scheme; Said the 8th microstrip transmission line is that one section width W is that 30 microns, length L are 200 microns microstrip transmission line; Said the 9th microstrip transmission line is that one section width W is that 40 microns, length L are 250 microns microstrip transmission line, and said the tenth microstrip transmission line is that one section width W is that 30 microns, length L are 20 microns microstrip transmission line.
In the such scheme, the capacitance of said first capacitance is 3.3pF, and the capacitance of said second capacitance is 0.18pF.
Compared with prior art, the beneficial effect of the technical scheme generation of the present invention's employing is following:
The present invention is simple in structure; Resonant tank has determined the size of output frequency; Thereby negative resistance produces the just resistance generation resonance that the negative resistance of circuit generation has been offset resonant tank, and output matching circuit has been realized power match, has finally realized the signal output of 56.6-57.3GHz frequency range.
Description of drawings
The circuit theory diagrams of the 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator that Fig. 1 provides for the embodiment of the invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment technical scheme of the present invention is described in detail.
As shown in Figure 1, the present invention provides a kind of 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator, comprises that resonant tank 1, negative resistance produce circuit 2 and output matching circuit 3.
The pHEMT transistor 101 that short circuit is leaked in resonant tank 1 source of having adopted is as varactor; Thereby change its capacitance size through the source drain terminal voltage that changes grid end and short circuit and realize frequency tuning; Whole resonant tank has adopted the microstrip line of two 1/4 wavelength lines as inductance; And at its two ends equal making alive is controlled the frequency of oscillation of whole VCO; The electric capacity of controlling varactor through two voltages can increase its tuning range, and whole resonant tank is equivalent to parallel resonance, and wherein the scope of two VTs is-3.3V to 3.3V.
Negative resistance produces circuit 2 and is used for producing the resistive composition of offsetting resonant tank.Negative resistance produces circuit 2 and comprises that the drain electrode of the 2nd pHEMT transistor 203, the two pHEMT transistors 203 connects an end of the 3rd microstrip transmission line 204, and the other end of the 3rd microstrip transmission line 204 is connected with the DC power supply of 3.3V.The drain electrode of the 2nd pHEMT transistor 203 is connected with output matching circuit 3 through second capacitance 202 of 0.18pF; The source electrode of the 2nd pHEMT transistor 203 connects an end of the 4th microstrip transmission line 205, and the other end of the 4th microstrip transmission line 205 links to each other with ground; The grid of the 2nd pHEMT transistor 203 links to each other with an end of the 5th microstrip transmission line 206, and the other end of the 5th microstrip transmission line 206 links to each other with an end of the 6th microstrip transmission line 207 and an end of the 7th microstrip transmission line 208 respectively.The other end of the 6th microstrip transmission line 207 links to each other with the 0.3V DC power supply, and the other end of the 7th microstrip transmission line 208 links to each other with resonant tank 1 through first capacitance 201 of 3.3pF.
The 2nd pHEMT transistor 203 is that 0.15 micron, grid width W are 100 microns transistor for the long L of grid; Said the 3rd microstrip transmission line 204 is that one section width W is that 15 microns, length L are 420 microns microstrip transmission line; Said the 4th microstrip transmission line 205 is that one section width W is that 40 microns, length L are 410 microns microstrip transmission line; Said the 5th microstrip transmission line 206 is that one section width W is that 15 microns, length L are 450 microns microstrip transmission line; Said the 6th microstrip transmission line 207 is that one section width W is that 15 microns, length L are 430 microns microstrip transmission line; Said the 7th microstrip transmission line 208 is that one section width W is that 15 microns, length L are 120 microns microstrip transmission line.
Negative resistance produces circuit and has adopted the 2nd pHEMT transistor 203 and produced negative resistance in all the connect mode of microstrip transmission line of its grid, source electrode and drain electrode; The 4th microstrip transmission line 205 that wherein source class connected can equivalence be inductor; Thereby produced negative feedback; All produced negative resistance in grid and drain electrode, wherein the drain electrode of the 2nd pHEMT transistor 203 needs the 3.3V power supply, and grid needs the 0.3V power supply.Thereby negative resistance produces circuit and has formed a negative resistance to offset the resistance formation vibration in the resonant tank through the source class feedback at the input of grid.
The 8th microstrip transmission line 301 is that one section width W is that 30 microns, length L are 200 microns microstrip transmission line; The 9th microstrip transmission line 302 is that one section width W is that 40 microns, length L are 250 microns microstrip transmission line, and the tenth microstrip transmission line 303 is that one section width W is that 30 microns, length L are 20 microns microstrip transmission line.
Above resonant tank 1, negative resistance produce the general structure that circuit 2 and output matching circuit 3 have been formed voltage controlled oscillator provided by the invention jointly; Resonant tank has determined the size of output frequency; Thereby the just resistance that the negative negative rent of renting the generation of generation circuit has been offset resonant tank produces resonance; Output matching circuit has been realized power match, has finally realized the signal output of 56.6-57.3GHz frequency range.
Above-described specific embodiment; The object of the invention, technical scheme and beneficial effect have been carried out further explain, and institute it should be understood that the above is merely specific embodiment of the present invention; Be not limited to the present invention; All within spirit of the present invention and principle, any modification of being made, be equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (9)
1. a 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator is characterized in that, comprising:
Resonant tank is used for confirming frequency of oscillation;
Negative resistance produces circuit, is used for producing the resistive composition of offsetting said resonant tank;
Output matching circuit is used for output impedance is matched to 50 ohm.
2. the 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator as claimed in claim 1; It is characterized in that: said resonant tank produces circuit through first capacitance and said negative resistance and is connected; Said negative resistance produces circuit and is connected through second capacitance with said output matching circuit; Said output matching circuit is connected with an end of 50 ohm, and the other end of said 50 ohm is connected with ground.
3. the 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator as claimed in claim 2 is characterized in that: said resonant tank comprises a pHEMT transistor, first microstrip transmission line and second microstrip transmission line; Transistorized source electrode of a said pHEMT and drain electrode short circuit, and link to each other the adjustable DC power supply of another termination-3.3-3.0V of said first microstrip transmission line with an end of first microstrip transmission line; The transistorized grid of a said pHEMT links to each other with an end of second microstrip transmission line, the adjustable DC power supply of another termination-3.3-3.0V of said second microstrip transmission line; Transistorized source electrode of a said pHEMT and drain electrode short circuit, and be connected through first capacitance and negative resistance generation circuit.
4. the 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator as claimed in claim 3 is characterized in that: a said pHEMT transistor is that a long L of grid is that 0.15 micron, grid width W are the pHEMT transistor of 80 microns diode connected mode; Said first microstrip transmission line and second microstrip transmission line are that width W is that 15 microns, length L are that 360 microns equivalence is the microstrip transmission line of inductance.
5. the 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator as claimed in claim 2; It is characterized in that: said negative resistance produces circuit and comprises the 2nd pHEMT transistor; Said the 2nd pHEMT transistor drain connects an end of the 3rd microstrip transmission line, and the other end of said the 3rd microstrip transmission line is connected with the DC power supply of 3.3V; Said the 2nd pHEMT transistor drain is connected with output matching circuit through second capacitance; The transistorized source electrode of said the 2nd pHEMT connects an end of the 4th microstrip transmission line, and the other end of said the 4th microstrip transmission line links to each other with ground; The transistorized grid of said the 2nd pHEMT links to each other with an end of the 5th microstrip transmission line, and the other end of the 5th microstrip transmission line links to each other with an end of the 6th microstrip transmission line and an end of the 7th microstrip transmission line respectively; The other end of said the 6th microstrip transmission line links to each other with the 0.3V DC power supply, and the other end of said the 7th microstrip transmission line links to each other with resonant tank through first capacitance.
6. the 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator as claimed in claim 5 is characterized in that: said the 2nd pHEMT transistor is that the long L of grid is that 0.15 micron, grid width W are 100 microns transistor; Said the 3rd microstrip transmission line is that width W is that 15 microns, length L are 420 microns microstrip transmission line; Said the 4th microstrip transmission line is that width W is that 40 microns, length L are 410 microns microstrip transmission line; Said the 5th microstrip transmission line is that width W is that 15 microns, length L are 450 microns microstrip transmission line; Said the 6th microstrip transmission line is that width W is that 15 microns, length L are 430 microns microstrip transmission line; Said the 7th microstrip transmission line is that width W is that 15 microns, length L are 120 microns microstrip transmission line.
7. the 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator as claimed in claim 2 is characterized in that: said output matching circuit comprises the 8th microstrip transmission line, the 9th microstrip transmission line and the tenth microstrip transmission line; One end of said the 8th microstrip transmission line produces circuit through second capacitance and negative resistance and is connected, and the other end of said the 8th microstrip transmission line links to each other with an end of the 9th microstrip transmission line and an end of the tenth microstrip transmission line respectively; The other end of said the 9th microstrip transmission line is unsettled, and the other end of said the tenth microstrip transmission line links to each other with 50 ohm.
8. the 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator as claimed in claim 7; It is characterized in that: said the 8th microstrip transmission line is that one section width W is that 30 microns, length L are 200 microns microstrip transmission line; Said the 9th microstrip transmission line is that one section width W is that 40 microns, length L are 250 microns microstrip transmission line, and said the tenth microstrip transmission line is that one section width W is that 30 microns, length L are 20 microns microstrip transmission line.
9. like each described 57GHz voltage controlled oscillator that is used for millimetre-wave attenuator of claim 2 to 7, it is characterized in that: the capacitance of said first capacitance is 3.3pF, and the capacitance of said second capacitance is 0.18pF.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201010512276.XA CN102457226B (en) | 2010-10-19 | 2010-10-19 | 57 GHz voltage controlled oscillator used for millimeter wave communication |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201010512276.XA CN102457226B (en) | 2010-10-19 | 2010-10-19 | 57 GHz voltage controlled oscillator used for millimeter wave communication |
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| CN102457226A true CN102457226A (en) | 2012-05-16 |
| CN102457226B CN102457226B (en) | 2014-06-18 |
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| Application Number | Title | Priority Date | Filing Date |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109274368A (en) * | 2018-11-14 | 2019-01-25 | 电子科技大学 | A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85101664A (en) * | 1985-04-01 | 1987-01-17 | 索尼公司 | Tuned oscillator |
| CN1276103A (en) * | 1997-10-15 | 2000-12-06 | 摩托罗拉公司 | Dual band voltage controlled oscillator |
| CN201226510Y (en) * | 2007-08-31 | 2009-04-22 | 广州逸锋电子科技有限公司 | Paste type pressure control oscillator |
| CN101510763A (en) * | 2009-03-06 | 2009-08-19 | 电子科技大学 | Millimeter-wave monolithic integrated power amplifier |
| CN101621282A (en) * | 2009-03-06 | 2010-01-06 | 电子科技大学 | Millimeter-wave single-chip integrated low-noise amplifier (LNA) |
-
2010
- 2010-10-19 CN CN201010512276.XA patent/CN102457226B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85101664A (en) * | 1985-04-01 | 1987-01-17 | 索尼公司 | Tuned oscillator |
| CN1276103A (en) * | 1997-10-15 | 2000-12-06 | 摩托罗拉公司 | Dual band voltage controlled oscillator |
| CN201226510Y (en) * | 2007-08-31 | 2009-04-22 | 广州逸锋电子科技有限公司 | Paste type pressure control oscillator |
| CN101510763A (en) * | 2009-03-06 | 2009-08-19 | 电子科技大学 | Millimeter-wave monolithic integrated power amplifier |
| CN101621282A (en) * | 2009-03-06 | 2010-01-06 | 电子科技大学 | Millimeter-wave single-chip integrated low-noise amplifier (LNA) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109274368A (en) * | 2018-11-14 | 2019-01-25 | 电子科技大学 | A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator |
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| CN102457226B (en) | 2014-06-18 |
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Effective date of registration: 20201224 Address after: 510000 601, building a, 136 Kaiyuan Avenue, Huangpu District, Guangzhou City, Guangdong Province Patentee after: AoXin integrated circuit technology (Guangdong) Co.,Ltd. Address before: 100029 Beijing city Chaoyang District Beitucheng West Road No. 3 Patentee before: Institute of Microelectronics, Chinese Academy of Sciences |
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