CN85101664A

CN85101664A - Tuned oscillator

Info

Publication number: CN85101664A
Application number: CN85101664.2A
Authority: CN
Inventors: 村上义和; 伊藤诚吾; 山田敏郎
Original assignee: Sony Corp
Current assignee: Sony Corp
Priority date: 1985-04-01
Filing date: 1985-04-01
Publication date: 1987-01-17
Also published as: CN1003971B

Abstract

Disclosed tuned oscillator comprises active element, is connected electrically to the resonator of active element, and is by utilizing that the ferromagnetic resonance phenomenon is made and the magnetic circuit of magnetic field to resonator being provided.

Resonator is that the YIG film magnetic resonance element that utilizes film formation technology to make is formed, and has utilized the even mould ferromagnetic resonance in YIG film, and works under the magnetic circuit externally-applied magnetic field.

Description

Tuned oscillator

Industrial applicability

The invention relates to the tuned oscillator and the sweep oscillator in spectroanalysis instrument, microwave test instrument etc. that use as local oscillator in the tuning circuit in broadcast receiver, television set or the like.

The problem of technical background and existence thereof

In the prior art, such oscillator uses Yttrium iron garnet Ti Calipering YIG ball, and (YIG represents Yttrium, iron and garnet here, but wherein may contain various types of additives) (it is at Japanese patent application, number be to disclose in 32671/1978 the publication file), this class YIG ball has various characteristic, for example high-end at microwave band, high resonance characteristics Q value is arranged; Because therefore its resonance frequency and the volume-independent of YIG can done very for a short time on overall dimension; When change was added to bias magnetic field on the YIG ball, its response frequency can change on broadband internal linear ground; Or the like.

Yet owing to use the YIG ball in oscillator, above-mentioned oscillator also has weak point, and such tuned oscillator is difficult to concentrate and is formed in MIC(film hybrid microwave integrated circuit) substrate on, therefore structural flexibility has just reduced.Near and, such yig tuned oscillator must be realized coupling with the ribbon that constitutes YIG ball coupling ring by adjusting lead on the one hand, and must realize coupling, the influence that causes this tuned oscillator very easily to be vibrated by the position of adjusting between coupling ring and the YIG body on the other hand.

Subject matter of an invention

Consider the problems referred to above, the present invention must provide a tuned oscillator that can improve above-mentioned shortcoming.

Summary of the invention

The invention provides a tuned oscillator, it has comprised an active element, make by the magnetic material that utilizes the ferromagnetic resonance phenomenon for one, resonator and the magnetic circuit that magnetic field is provided to resonator of being electrically connected with active element, in this case, utilize film formation technology, resonator is by YIG(yttrium, iron and garnet) film magnetic resonance element formation; And utilized the ferromagnetic resonance of the even pattern in YIG film.

Embodiment

According to the present invention, the embodiment of tuned oscillator describes further by illustration now.

In the present embodiment, as shown in Figure 1, provide one by magnetic material, for example the yoke 1 that constitutes such as permalloy comprising magnetic gap 3 magnetic gaps 2, is being placed in magnetic gap 2 and is being contained in oscillating circuit in the substrate 3.Coil 6 at least on

magnetic pole

4 and 5 one, the magnetic gap 2 of magnetic pole formation iron staggered relatively yoke 1, and change feed current to coil 6, thereby finished the generator of variation magnetic field.

Fig. 2 is the plan view that comprises the substrate 3 practical structures examples of oscillating circuit, and Fig. 3 is the sectional drawing of A-A along the line among Fig. 2.As shown in Figures 2 and 3, using material, for example form gnd conductor 32 on first first type surface of the dielectric substrate 31 that forms such as aluminium oxide, second first type surface at dielectric substrate 31 forms microstrip line 33, its end arrives gnd conductor 32 by bonding conductor 34, microstrip line 33 and YIG film magnetic resonance element 35 are to carry out inductance coupling, YIG film magnetic resonance element 35 is constructed as follows, use film to form technology, for example sputter, chemical vapour deposition technique (CVD method), liquid phase epitaxial process (LPE method) or the like, for example at GGG(yttrium gallium garnet) form the ferromagnetic material YIG film on two first type surfaces on the substrate 36, with shape on it and mutually, for example on YIG film, form circle graph shape by the technology of taking pictures, the bipolar high frequency body pipe of label 37 expressions in Fig. 2 and 3, label 38 expression impedance matching circuits, label 39 expression direct current unit MOS(metal-oxide semiconductor (MOS)s) electric capacity, the base stage B of bipolar transistor 37 is connected to the ground wire pad 40 that is coupled with ground plate 32 by having reactance line 41 in the present embodiment, emitter E is connected to YLG film magnetic resonance element 35 sides, and collector electrode C is connected to impedance matching circuit 38 sides, has so just constituted its base stage serial Feedback oscillator.

Use YIG film magnetic resonance element as resonator, the oscillation principle of oscillating circuit, oscillating conditions etc. will further be sketched.Use the oscillating circuit or the YIG film magnetic oscillation element 35 of resonator in addition, not only output circuit part but also feedback circuit all will further describe.Fig. 4 A and 4B illustrate the block diagram of this oscillating circuit, and in Fig. 4 A and B, label 42 is the YIG film resonant circuit, label 43 is a negative resistance circuit, label 44 is that impedance matching circuit and label 45 are load, and label 46 is a load impedance in Fig. 4 B, and it has comprised the impedance of match circuit.

At Fig. 4, T _yExpression sees into to YIG film resonant circuit side, i.e. the reflection coefficient of YIG feedback circuit side and T _NExpression sees into from the active element side, i.e. the reflection coefficient of seeing into to the negative resistance circuit side from terminal A, they can be with dividing from terminal A although enter their impedance Z _yAnd Z _ARepresent in the formula below

T _y＝ (Zy-ZO)/(Zy+ZO) ……（1）

T _N＝ (Z _N-Z _O)/(Z _N+Z _O) ……（2）

Here Z _oThe characteristic impedance of indication circuit (50 Ω)

The stable oscillation stationary vibration condition can be used reflection coefficient T _yAnd T _NBe expressed as T _yT _N=1 ... (3)

Because reflection coefficient Ty and TN are majority, equation (3) can be rewritten as follows, if difference respective amplitude and phase place

｜T _y｜｜TN｜ej（θy+θN）＝1

Promptly | T _y|| T _N|=1 ... (4) θ y+ θ N=0 ... (5)

Because the YIG feedback circuit has the loss of active equivalent resistance corresponding to the YIG film resonator as passive circuit, has produced in equation (1) | T _y|＜1, successively, for setting up the oscillating condition that provides by equation (4), | T _N|＞1 condition must be set up, yet formula (2) can want to separate impedance Z like this _NMust have negative resistance charactertistic.

Negative resistance circuit 43 can be that 2 end active elements are as negative resistance element in Fig. 4, perhaps constitute by three end active elements or feedback element, in the example of Fig. 2 and 3, use high frequency bipolar transistor as three end active elements, common base serial Feedback type oscillating circuit shown in Figure 5, the alphabetical X that indicates in Fig. 5 represents the reactance feedback circuit.

Though described the stable oscillation stationary vibration condition of oscillating circuit, must set up following condition, to making the oscillating circuit starting of oscillation.

| T _y|| T _NS|＞1 ... (6) promptly | T _y|＞1/ (| T _NS|) ... (7)

Here T _NSBe T _NT when small-signal _NValue, when oscillating circuit began starting of oscillation, active element was in down work significantly, the absolute value of the negative resistance 1/|T that diminishes _N| beginning becomes big gradually, and when equation (2) when setting up, the starting of oscillation of oscillating circuit enters stable state, and on the basis of above-mentioned explanation, the operation principle of YIG oscillating circuit will be by means of Smith's pie diagram summary of Fig. 6.

As shown in Figure 6, when at small-signal, signal amplitude is little, and 1/TN is on the state of curve C, its corresponding inside near Smith's pie diagram, and when active element was operated in significantly, the state of its experience was represented that by curve D moving direction is represented with arrow.

In Fig. 2 and the described YIG oscillating circuit of Fig. 3, YIG film magnetic resonance element 35 is resonance not, and it only is the terminal part short circuit of microstrip line, Ty is become in Fig. 5 represent with the camber line shown in the A, can clearly be seen that from Fig. 6, because reflection coefficient T _NHave amplitude, therefore, can not satisfy, therefore, also just can not produce vibration by the given starting of oscillation phase condition of equation (5).

If YIG film magnetic resonance element 35 is placed in the D.C. magnetic field, then in frequency f ₁And f ₀The place produces resonance, and resonance frequency is at f ₀Near, reflection coefficient track that Ty goes out shown in B among Fig. 6, at this moment, in frequency f ₀Near, the starting of oscillation amplitude conditions that provides by formula (7) and satisfy simultaneously at this moment, thereby starting of oscillation by the starting of oscillation phase condition that formula (5) provides.The curve C of 1/TN from Fig. 6 moves to curve D when starting of oscillation, and meanwhile, vibration frequency f has been determined in equation (4) and (5) ₀, make the oscillator electric current at frequency of oscillation f ₀On stably work.

If under this principle, the resonance frequency of YIG film element 35 when change adds DC magnetic field voltage is from f ₁To f ₂Change in the scope, can regulate near the frequency range of oscillating circuit resonance frequency and regulate.

In the present embodiment, resonator is to be made of the YIG film magnetic resonance element of making by thin film fabrication technology, in this case, need to suppress pseudo-response (magnetic pattern), more specifically, the magnetic resonance unit single (yig single crystal ball) of being made by the monocrystalline ball has advantage, magnetostatic pattern, the excitation difficulty, and independent common mode of resonance can obtain by uniform-precession mode, the magnetic resonance element of doing by YIG film, has advantage on the other hand, although it is placed in the high frequency uniform magnetic field that performs, magnetostatic mode excitation is because be uneven in inside, DC magnetic field, when D.C. magnetic field vertically when being applied to the dish type specimen surface of making by ferromagnetic material, the magnetic mould that is presented analyze (applied physics magazine in the present document, volume 48,1977.7.3001-3007 page or leaf), wherein each pattern is with (nN) m graphical presentation, and this (nN) chart has the n node at garden Zhou Fangxiang, and the N node is arranged aspect radius, (m-1) node is arranged on thickness direction, the uniformity of passing the high frequency magnetic field of whole sample is fabulous, and (1, N) series becomes main magnetostatic mode.

Fig. 7 shows under the 9GHz frequency, the ferromagnetic response results of garden shape YIG film of in cavity resonator, testing, wherein (1, N) ₁Magnetostatic type series are subjected to strongly, when above-mentioned microwave component filter or similarly be this sample when constituting for example, have used even pattern magnetostatic mode (1,1) ₁Series, at this moment other all magnetostatic modes all will be pseudo-responses, so just worry to form pseudo-response and moding, so expectation can provide a kind of and can suppress to produce the magnetic pattern of unwanted pseudo-response but do not damage even pattern, with the magnetic response material that adapted is made with ferromagnetic material thin film (YIG film), this will describe afterwards.

Fig. 8 provides the state of inner D.C. magnetic field Hi, when DC magnetic field vertically adds up to thickness is t, diameter is R for the D(radius) YIG garden shape film on the time, in this case, it is enough little with the thickness diameter than t/D, Distribution of Magnetic Field in the sample thickness direction can be ignored, because demagnetizing field is big and diminish suddenly at its outward flange position in dish-type, makes that inner D.C. magnetic field is being little near the center, and beginning to become big suddenly near external margin, result according to above-mentioned document analysis, if the ratio of r/R is taken as § at the Hi=w/r place, magnetostatic mode is between O≤r/R≤§, the angular frequency when w is magnetostatic mode resonance, γ is a gyromagnetic ratio, when magnetic field fixedly the time, resonance frequency increases along with modulus N and becomes big, to making magnetostatic pattern or zone extend to the outside shown in Fig. 9 A gradually, Fig. 9 B illustrate correspondence (1, N) ₁Three kinds of low order mode samples of mould electronic curing component distributes, the amplitude label of the element of absolute value representation electronic curing has here been represented the phase relation of electronic curing component, from Fig. 9, can know and find out, it is few that the electronic curing component becomes in magnetostatic mode, if utilize this point, just might suppress to produce the excitation of pseudo-response magnetic mould, and not to even mode producing influence.

In fact, as shown in figure 10, cannelure 53, for example can constitute on YIG film magnetic resonance element 52 by selective corrosion technology, for example, the dish-type that forms at GGG substrate 51 provides annular section, in this case, YIG film magnetic resonance element 52 can be done enough for a short time on its thickness, and magnetostatic mode be in this case (1, N) ₁Mould.

In (1,1) ₁Mould electronic curing component becomes the O place, and the groove 53 and the element 52 of formation are coaxial, and what groove 53 can be continuous also can constitute discontinuously, in the configuration shown in Figure 11, by 53 of grooves around scope can be thinner than its exterior portion, in this case, at the inner area that nestles up groove 53, demagnetizing field increases, therefore demagnetizing field will be even basically in this area, in other words, and shown in Fig. 9 A dotted line, in the scope of radial direction broad, D.C. magnetic field is uniform basically.

Can suppress the excitation of other magnetostatic mode except that even mould like this.

Groove 53 is controlled magnetization in the magnetic resonance element like this, in this case, because groove is placed on (1,1) ₁Mould electronic curing component becomes the position of O, does not influence excitation (1,1) ₁Mould, groove 53 position of placing be O for other magnetostatic mode electronic curing component on the other hand, and magnetization is partly finished at a high speed like this, and consequently, the excitation of these moulds is that weak enabling suppresses puppet and respond and do not destroy even mould and become possibility.

Owing to do not rely on the amplitude of sample saturation magnetization fully in the distribution of YIG film (seeing Fig. 9 B) medium-high frequency magnetization component, and equally do not rely on the thickness radius ratio very much yet, even when the thickness of saturation magnetization and ferromagnetic layer 52 be not simultaneously, also need not change the corresponding therewith position of groove 53.

Be radius 1mm according to experiment with YIG film, thickness is the YIG film element of 20 μ m, and forms dark 2 μ m in the above, and radius is the groove 53 of 0.8mm, uses microstrip line to test its ferro resonance frequency, and Figure 12 illustrates the test result of inserting loss, and unloaded Q is 775.

In the shape YIG film resonant element of garden (1,1) ₁Mould electronic curing component is 0 at the r/R=0.8 place.

Further consider that the radius of being made by same YIG film is that 20 μ m(do not have groove for 1mm thickness) the YIG film element, use microstrip line test ferro resonance.

The test result of inserting loss at that time shown in Figure 13, the Q value of Jia Zaiing not is 660.According to above-mentioned relatively being readily appreciated that, except the outer magnetostatic film of (1,1) l mould can be suppressed, so also just suppressed pseudo-response according to present embodiment.

Be without prejudice at this even mould, the Q value of Jia Zaiing can be not impaired yet.

In by YIG film magnetic resonance element, some other structure also can suppress to produce the magnetostatic mode excitation of pseudo-response, i.e. ferromagnetic thin film, and the interior zone that can consider to form it is thinner than its perimeter.To specifically describe below.When D.C. magnetic field DC is applied to thickness is t, and diameter is R for the D(radius) YIG garden shape film, and vertically act on this film surface.Interior DC magnetic field H i can be expressed as Hi=Hd(r/R)-Ha wherein Hd be demagnetizing field, Ha is anisotropic magnetic field.In this case, thickness/diameter ratio t/D is enough little, and sample can be ignored in the Distribution of Magnetic Field of thickness direction.Thickness is that 20 μ m radiuses are that the result of calculation of YIG garden dish demagnetizing field of 1mm is shown in Figure 14.Because demagnetizing field Hd is big in the inside of garden dish, and diminishes suddenly in its marginal portion, and inner D.C. magnetic field is being little near core, and is becoming big suddenly near outer edge portion.At radius is the film thickness of the same YIG film interior zone of 0.8mm when reducing by 1 μ m, and the result of calculation that demagnetizing field distributes as shown in figure 15.As can be seen from Figure 15 when the thickness of internal area was slightly more meagre, demagnetizing field increased a bit near the marginal portion of the area that thickness is reduced, and the flat site of demagnetizing field has enlarged.

According to top described, when the internal area of YIG film element reduces some than its thickness of external area on thickness, widen at the flat site of the demagnetizing field of internal area, cause and can suppress the magnetostatic mode that the generation puppet responds.For example, as shown in figure 16, on GGG substrate 51, form the YIG film element of forming by ferromagnetic material 52.On the outer surface of YIG film element 52, form concave portion 54, make that the thickness of internal area is littler than the thickness of external area.And the thickness of YIG film 52 is done enough thinly, makes that the Distribution of Magnetic Field on thickness direction is even, this moment magnetostatic mode be (1, N) l mould.

Concave portion 54 makes the excitation that produces the pseudo-magnetostatic mode that responds to suppress effectively always along reaching such position.Preferably be selected in such position, the amplitude of (1,1) l mould becomes 0 herein, for example when YIG film element 52 be when being garden shape in shape, the 0.75-0.85 that concave portion 54 extends to diameter is doubly.

According to experiment, be 20 μ m at thickness, radius is to be 0.75mm with the radius that is formed centrally on the YIG film magnetic resonance element of 1mm, is deeply to use microstrip line to test its ferro resonance on the garden shape concave portion 54 of 1.7 μ m.Figure 17 illustrates the test result of inserting loss.The empty Q value of this moment is 865.

Because the magnetic resonance element, for example the resonance frequency of YIG film element is comply with the saturation magnetization in element, and resonance frequency directly is subjected to the temperature characterisitic influence of saturation magnetization.If above-mentioned resonator circuit uses the YIG film element, resonance frequency will be subjected to, for example the influence of ambient temperature and breaking down.For fear of this situation occurring, for example in the

magnetic pole

4 and 5 of iron yoke 1 is furnished with a soft magnet plate made from YIG film element 52 temperature profile same materials at least.According to the temperature compliance of magnetic sheet, make the YIG film element vary with temperature characteristic and reduced at the compliance compensation YIG film element of magnetic gap 2 internal magnetic fields itself.

According to present embodiment, the magnetic flux that produces between

magnetic pole

4 and 5 can change along with the variation that is applied to coil 6 electric currents, has so also just changed frequency of oscillation.Under such condition, the minimum frequency f of frequency of oscillation _MinCan provide

f _min＝γ（N _T·4πM _S+H _S）

γ is a gyromagnetic ratio, N _TIt is demagnetization coefficient.

M _SBe saturation magnetization, H _SIt is saturation magnetic field.

Because the N of YIG ball _TBe N _T=1/3, and YIG film is made as N _T＜＜1.Use the change frequency lower bound of YIG film tuned oscillator more much lower than the lower bound of the tuned oscillator of using the YIG ball.The D.C. magnetic field that adds as fruit gradually changes, and main magnetic film (110) can accidental become identical with other magnetostatic film on frequency and produce pseudo-vibration and tuning deviation.Use the YIG film tuned oscillator of present embodiment, when D.C. magnetic field changes, (1, N) _lMould also all changes on frequency in the same manner, does not have mould to intersect mutually, does not cause such damage.Generally speaking, if by piece hulk) two sides of the YIG garden plate made do not have mirror finish, and then not loading the Q value can not increase.

On the other hand, the YIG film that forms explained hereafter by film does not require mirror finish.

The YIG film of using film to form explained hereafter need not polished by minute surface one on the one hand, and the GGG substrate is as the substrate of tuned oscillator.

Near and, because the even mould of N=1, promptly the main mould of the magnetostatic mode of YIG film is applied, and does not add Q value so is high, and the monolateral band of SSB() noise can lower.Moreover because external Q can be lowered, broadening change frequency vibration zone is possible.In addition,, use YIG film, do not have above-mentioned inherent defect in the YIG ball according to present embodiment.

Figure 18 to 25 shows respectively according to other embodiment of tuned oscillator of the present invention.The corresponding part of element has been used identical label in 18 figure to 25 figure, and has no longer described in detail.Among the embodiment that provides in Figure 18 to 22, the tuned oscillator circuit uses bipolar transistor 37 as active element.In the embodiment shown in Figure 23 to 25, the tuned oscillator circuit uses for example Gum diode of two-terminal element, and avalanche diode or similar device are as active element.

Figure 18 illustrates the improvement example of Fig. 5, and wherein even summation band line 33 is by characteristic impedance Z.Ground connection, in the tuned oscillator electricity of Figure 18, when YIG film magnetic resonance element 35 not during resonance, γ _y=O is γ _yBe the center of Smith's pie diagram, start the amplitude conditions of vibration like this and be false.The possibility of parasitic oscillation is very little like this.

Figure 19 illustrates the example of tuned oscillator, and wherein YIG film magnetic resonance element 35 multilayer shapes are formed between two coupling microstrip lines 33 and the 33a, and the emitter of transistor 37 is by microstrip line 33 ground connection, and the base stage of transistor 37 is by band line 33a ground connection.In the example of Figure 19, YIG film magnetic resonance element 35 is determined wherein when YIG film magnetic resonance element 35 resonance, to add positive feedback in the feedback circuit as output loop not as band pass filter, establishes | γ _N|＞1 condition.

Particularly be connected to a characteristic impedance Z in base stage and the emitter band line _ODuring termination, the possibility of parasitic oscillation has just diminished.

Figure 20 illustrates the tuned oscillator practical circuit, and wherein transistor 37 emitters are by reactance X ₁Ground connection, transistor 37 base stages are by reactance circuit X ₃Ground connection, transistor 37 collector electrodes are by series connection, impedance area distribution road 38 and load 45 ground connection of the microstrip line coupling of YIG magnetic resonance element 35.At this moment YIG film magnetic resonance element is placed on output as band stop filter.A signal part feeds back to negative resistance circuit when the YIG resonance frequency, and such tuned oscillator is to inject the work of obstructive type oscillator certainly.

Figure 21 illustrates a tuned oscillator example, wherein 35 of YIG film magnetic resonance elements are clipped between microstrip coupled line 33 and the 33a, the collector electrode of transistor 37 is by microstrip line 33a ground connection, and sending-end impedance match circuit 38 is by microstrip line 33 ground connection, and the example of similar Figure 20 of other parts of circuit.At this moment, YIG film magnetic resonance element is placed on output as band pass filter, if YIG film magnetic resonance element resonance not, load 45 short circuits, the phase condition of vibration is false.And when YIG film magnetic resonance element resonance, load 45 and impedance matching circuit 38 can be considered by this YIG film magnetic cell 35, have so just satisfied oscillating condition.

Figure 22 illustrates tuned oscillator circuit one example, and wherein the tuned oscillator circuit of Fig. 5 constitutes back-coupled generator in parallel.Tuned oscillator example in Figure 20 and 21 all can form corresponding back-coupled generator circuit in parallel.

Figure 23 illustrates a tuned oscillator circuit, wherein an end of YIG film magnetic resonance element 35 microstrip coupled lines 33 is by two ends active element 37a ground connection, and the other end of microstrip line 33 passes through the series circuit ground connection of resistance match circuit 38 and load 45, and corresponding the end from A seen into γ _NWith γ r, set up aforesaid oscillating condition.At this moment, YIG film magnetic resonance element 35 is placed on the output band as band stop filter, and the part of signal feeds back to two ends active element 37a when the YIG resonance frequency, and this tuned oscillator circuit working is injected under the obstructive type oscillator certainly so-called.

Figure 24 illustrates a tuned oscillator example, the YIG film magnetic end ground connection of microstrip coupled line 33 of element 35 of shaking wherein, and the other end of this microstrip line is by 2 end active element 37a ground connection and the series circuit ground connection by impedance matching circuit 38 and load 45.In Figure 24, the negative resistance circuit 43 in Fig. 4 is 2 end active element 37a.

Figure 25 illustrates a tuned oscillator example, wherein the YIG film magnetic element 35 that shakes is that sheet is clipped between two microstrip coupled lines 33 and the 33a, two ends active element 37a one end ground connection, and the other end is by microstrip line 33a ground connection, input at impedance matching circuit 38 passes through microstrip line 33 ground connection, and other parts are similar with Figure 23.In this case, YIG film magnetic resonance element is placed on output as band pass filter, if YIG film magnetic resonance element 35 resonance not, then load 45 short circuits, therefore the phase condition of vibration is false.If YIG film magnetic resonance element 35 resonance, then load 45 and impedance matching circuit 38 can be considered by YIG film magnetic resonance element 35, have set up oscillating condition like this.

Utilize pierce circuit of the present invention not limit to the above embodiments, other pierce circuit can certainly be used in the present invention. In the above-described embodiment, bipolar transistor uses as three end active components, need not say that the field-effect active transistor also can be used as three end active components and uses. And then, need not say that the present invention is not confined to the above embodiments and can comprises various remodeling and the variation that does not exceed the scope of the invention yet.

The effect of invention

According to the present invention, because by so-called film forming technology, humorous such as Liquid－phase epitaxial growth technique, splash, the formation YIG film magnetic resonance elements such as chemical liquid phase growth technique are used as resonator, can fully effectively utilize YIG, and the flimsy shortcoming of ball is improved.

The succinct illustration of describing

Fig. 1 is the sectional drawing according to tuned oscillator embodiment of the present invention;

Fig. 2 is the plane graph of pierce circuit practical structures;

Fig. 3 is the profile along Fig. 2 line A-A;

Fig. 4 is the block diagram of setting forth oscillating circuit;

Fig. 5 is pierce circuit example side cabinet figure;

Fig. 6 is Smith's pie diagram of summary oscillation principle;

Fig. 7,8,9,12,13,14,15 and 17 sketches chart of the present invention respectively;

Figure 10, the 16th, the square body picture of summary YIG film magnetic oscillation element;

Figure 11 is the sectional drawing of Figure 10;

Figure 18 to 25 is the embodiment according to various oscillating circuits of the present invention.

Label 1 expression iron yoke, 2 expression air-gaps, 3 expression oscillating circuit substrates, 4 and 5 represent magnetic pole respectively, 6 expression coils, the 33rd, microstrip line, the 35th, YIG film magnetic resonance element, the 37th, transistor, the 38th, impedance matching circuit.

Claims

Tuned oscillator comprises active element, one utilize that the ferromagnetic resonance phenomenon makes carry out electrically connected resonator with active element, with the magnetic circuit that magnetic field is provided to resonator, it is characterized in that resonator is that the YIG film magnetic resonance element that utilizes film formation technology to make is formed, and utilized the even mould ferromagnetic resonance in YIG film.