CN117792332B - Electric tuning film bulk acoustic resonator based on large stress loading structure - Google Patents
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Abstract
The invention discloses an electric tuning film bulk acoustic resonator based on a large stress loading structure, which belongs to the technical field of tunable resonators and consists of a resonant structure and a plurality of stress loading structures symmetrically arranged around the resonant structure; the resonance structure is composed of a first piezoelectric film layer and two excitation electrode layers respectively arranged on the upper surface and the lower surface of the first piezoelectric film layer; the stress loading structure consists of a second piezoelectric film layer and two modulation electrode layers respectively arranged on the upper surface and the lower surface of the second piezoelectric film layer; the first piezoelectric film layer and the second piezoelectric film layer are integrated, and have elastic soft hardening effect; the excitation electrode layer is not connected with the adjacent modulation electrode layer; by applying direct-current bias signals to the two modulation electrode layers and applying alternating-current radio-frequency signals to the two excitation electrode layers, mutual separation of the direct-current bias signals and the alternating-current radio-frequency signals and resonance frequency adjustment are realized, and the method is more suitable for application scenes with larger deviation of resonance frequencies of devices in an integrated circuit.
Description
Technical Field
The invention belongs to the technical field of tunable resonators, and particularly relates to an electrically-tuned thin film bulk acoustic resonator based on a large-stress loading structure.
Background
The rapid development of radio frequency communication technology has put forward the requirements of higher frequency band, higher performance, lower power consumption and smaller volume for radio frequency filter. The Film Bulk Acoustic Resonator (FBAR) has advantages of small volume, low cost and low power consumption, and is compatible with the mainstream CMOS (complementary metal oxide semiconductor) process of the current integrated circuit, so that it is widely applied to core rf components such as rf filters, oscillators, diplexers, low noise amplifiers, and the like. In many research directions of the FBAR technology, frequency modulation is a research hotspot in academia and industry all the time, and has great application value in the aspects of realizing frequency consistency, temperature compensation, frequency band expansion and the like of devices. In particular, in the actual production process of FBAR devices, there is a problem that frequency of thousands of individual devices in a silicon wafer is inconsistent due to process consistency problems, which will pose a great challenge to the yield of devices. In addition, even if the frequency of the qualified device meets the factory specification, in the specific use process, certain deviation of the resonant frequency of the device, such as temperature drift problem caused by environmental temperature change, can occur sometimes due to different application environments. Therefore, in practical application of integrated circuits, it is often desired that the FBAR device has a frequency trimming function with a certain capability, so that the FBAR device reaches a desired frequency value, and this problem is effectively alleviated. In summary, a flexible, fast, low-difficulty tunable FBAR would have very broad application prospects.
Current tuning schemes typically reversibly adjust the resonant frequency of an FBAR over a range based on changes in external conditions such as light, temperature, electric or magnetic fields. The optical modulation scheme, the temperature modulation scheme and the magnetic field modulation scheme all need to add corresponding sensitive layers in the FBAR, and an additional modulation signal applying device is needed, so that the integration is not facilitated. The intrinsic electric field modulation scheme is characterized in that the Young modulus of the piezoelectric material is changed by applying direct current Bias on the electrode of the FBAR, so that the modulation of the resonant frequency of the FBAR is realized, but because a modulation signal is directly applied on the original electrode, the problem that an excitation signal and a modulation signal are mutually interfered exists, an additional Bias (Bias Tee) is needed for signal superposition to realize effective separation of the modulation signal and the excitation signal, the integration is not facilitated, the piezoelectric material is limited by the performance of the existing piezoelectric material, and the adjustable range is smaller. For example, ,"Extraction of second order piezoelectric parameters in bulk acoustic wave resonators[J]. Applied Physics Letters 2012,6-04 (" extraction of second order piezoelectric parameters of bulk acoustic wave resonators, application physics express, discloses an intrinsic electric field modulation FBAR with a relative modulation rate of only 1.56%. Therefore, there is a need to propose a novel tunable resonator to solve the above-mentioned problems.
Disclosure of Invention
Aiming at the problems of small adjustable range and need of an additional bias device in an intrinsic electric field modulation scheme, the invention provides the electric tuning film bulk acoustic resonator based on a large stress loading structure, and the piezoelectric film layer and the electrode layer with special structures are designed to realize larger relative modulation rate of resonant frequency, so that the electric tuning film bulk acoustic resonator has the advantages of low cost, low power consumption, easiness in integration and the like.
The technical scheme adopted by the invention is as follows:
An electric tuning film bulk acoustic resonator based on a large stress loading structure is composed of a resonance structure and a plurality of stress loading structures symmetrically arranged around the resonance structure; the resonance structure consists of a first piezoelectric film layer and two excitation electrode layers respectively arranged on the upper surface and the lower surface of the first piezoelectric film layer; the stress loading structure consists of a second piezoelectric film layer and two modulation electrode layers respectively arranged on the upper surface and the lower surface of the second piezoelectric film layer;
The first piezoelectric film layer and the second piezoelectric film layer are integrated, and have a piezoelectric effect and an elastic soft hardening effect, and when the first piezoelectric film layer is subjected to a large stress, the Young modulus of the first piezoelectric film layer can be changed; the excitation electrode layer is not connected with the adjacent modulation electrode layer; by applying direct current bias signals to the two modulation electrode layers of the stress loading structure and applying alternating current radio frequency signals to the two excitation electrode layers of the resonance structure, mutual separation of the direct current bias signals and the alternating current radio frequency signals and resonance frequency adjustment are realized.
Further, the materials of the first piezoelectric film layer and the second piezoelectric film layer are AlN (aluminum nitride), piezoelectric ceramics PZT (lead zirconate titanate), piezoelectric single crystal PMN-PT (lead magnesium niobate-lead titanate) and the like.
Further, when the material of the first piezoelectric film layer and the second piezoelectric film layer is AlN, the young's modulus of the first piezoelectric film layer is significantly changed when the first piezoelectric film layer is subjected to a large stress of not less than 0.8 Gpa.
Further, the shape and size of the plurality of stress loading structures are the same.
Further, the shape of the resonant structure is a regular polygon with even sides, preferably a square.
Further, the stress loading structure is shaped to gradually deform along the symmetrical width of the symmetrical axis of the resonant structure, wherein one end adjacent to the edge of the resonant structure is a short edge end, and the other end is a long edge end.
Further, the width of the long side end is at least 1.5 times the width of the short side end.
Further, the width of the short side end is the same as the side length of the resonant structure.
Further, the distance between the short side end and the long side end is at least 2 times the side length of the resonant structure.
Further, the length-width dimension of the two modulating electrode layers is at least 100 times the thickness.
Further, the thickness of the first piezoelectric thin film layer and the second piezoelectric thin film layer is at least 10 times the thickness of the excitation electrode layer.
Further, the thicknesses of the first piezoelectric film layer and the second piezoelectric film layer are 100-200 nm, and the thicknesses of the excitation electrode layer and the modulation electrode layer are 5-10 nm.
The working principle of the electric tuning film bulk acoustic resonator based on the large stress loading structure provided by the invention is as follows:
When direct current bias signals are applied to the two modulation electrode layers of all the stress loading structures, an electric field is formed in the corresponding second piezoelectric film layer; based on the inverse piezoelectric effect, the second piezoelectric film layer stretches or contracts to two sides; because the second piezoelectric film layer and the first piezoelectric film layer of the resonance structure are integrated, the first piezoelectric film layer synchronously contracts or stretches, namely receives a large stress effect, so that the Young modulus of the first piezoelectric film layer with the elastic soft hardening effect is changed;
Because the resonance structure can resonate under the action of the alternating current radio frequency signal, and the resonance frequency can be influenced by the Young modulus of the material, the Young modulus change of the first piezoelectric film layer can cause the resonance frequency of the resonance structure to change in a larger range;
based on the above process, the resonant frequency of the resonant structure can be adjusted in a large range by changing the size of the applied direct current bias signal, so that the mutual separation of the modulation signal (i.e. the direct current bias signal) and the excitation signal (i.e. the alternating current radio frequency signal) is realized, and finally, the flexible, rapid and adjustable film bulk acoustic resonator in a large range is realized.
Preferably, when the stress loading structure is shaped as a width gradually deformed, the stress of the short side end adjacent to the resonant structure is amplified, and when the direct current bias signal is simultaneously applied to all the stress loading structures, the stress of the short side end is further amplified, so that the first piezoelectric film layer is subjected to larger large stress, and the relative modulation rate of the resonant frequency is further increased.
Compared with the prior art, the invention has the beneficial effects that:
1. The invention provides an electric tuning film bulk acoustic resonator based on a large stress loading structure, which is characterized in that a whole piezoelectric film layer is designed into a special structure to obtain a first piezoelectric film layer and a second piezoelectric film layer, excitation electrode layers are arranged on the upper surface and the lower surface of the first piezoelectric film layer, and modulation electrode layers are arranged on the upper surface and the lower surface of the second piezoelectric film layer; the second piezoelectric film layer drives the first piezoelectric film layer integrated with the second piezoelectric film layer to synchronously shrink or stretch under the reverse piezoelectric effect by applying a direct-current bias signal to the modulating electrode layer, namely, the first piezoelectric film layer with the elastic soft hardening effect is subjected to a large stress effect, so that the Young modulus of the first piezoelectric film layer with the elastic soft hardening effect is changed under an alternating-current radio frequency signal, and further, the electrically tuned film bulk acoustic resonator is realized;
2. The invention can obtain the electrically tuned film bulk acoustic resonator based on a whole piezoelectric film layer with a special structure without other functional materials, and has the advantages of convenient preparation and easy mass production; more importantly, compared with the existing intrinsic electric field modulation scheme that a modulation signal is directly applied to an original electrode and the problem that an excitation signal and a modulation signal are mutually interfered exists, the method and the device have the advantages that corresponding direct current bias signals and alternating current radio frequency signals are respectively applied to the modulation electrode layer and the excitation electrode layer, signal superposition is not needed by an additional bias device, mutual separation of the direct current bias signals and the alternating current radio frequency signals can be achieved, the integration level is higher, meanwhile, the relative modulation rate of the resonance frequency is higher, and the method and the device are more suitable for application scenes with larger deviation of the resonance frequency of devices in an integrated circuit;
3. The voltage is converted into the stress according to the inverse piezoelectric effect by adopting the stress loading mode, the conversion process is very rapid, the generated leakage current is in the level of nanoampere culture (10 -9 A), and the leakage current is completely reversible within the elastic limit of the second piezoelectric film layer material, so that the low-power consumption, rapid and flexible large-scale adjustment is realized.
Drawings
Fig. 1 is a schematic three-dimensional structure diagram of an electrically tuned thin film bulk acoustic resonator based on a large stress loading structure according to embodiment 1 of the present invention;
Fig. 2 is a schematic cross-sectional view of an electrically tuned thin film bulk acoustic resonator based on a large stress loading structure according to embodiment 1 of the present invention;
fig. 3 is a diagram of simulation results of stress distribution when the electrically tuned film bulk acoustic resonator based on the large stress loading structure provided in embodiment 1 of the present invention applies a dc bias signal;
Fig. 4 is a graph of amplitude-frequency curve simulation results of the electrically tuned thin film bulk acoustic resonator based on the large stress loading structure provided in embodiment 1 of the present invention under the application of different dc bias signals;
FIG. 5 is a graph of simulation results of series and parallel resonance frequencies of the electrically tuned film bulk acoustic resonator based on the large stress loading structure provided in embodiment 1 of the present invention under the application of different DC bias signals;
the description of the various references in the drawings is as follows:
1. Modulating an electrode layer on the front side; 201. a front side second piezoelectric thin film layer; 3. a front lower modulation electrode layer; 4. modulating electrode layer on left side; 202. a left second piezoelectric thin film layer; 5. a lower left modulating electrode layer; 6. modulating electrode layer on the right side; 203. a right side second piezoelectric thin film layer; 7. a right lower modulation electrode layer; 8. a modulating electrode layer on the backside; 204. a rear side second piezoelectric thin film layer; 9. a rear lower modulation electrode layer; 10. an upper excitation electrode layer; 205. a first piezoelectric thin film layer; 11. and a lower excitation electrode layer.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
The embodiment provides an electrically tuned film bulk acoustic resonator based on a large stress loading structure, which is shown in fig. 1 and 2 and consists of a square resonant structure and 4 stress loading structures symmetrically arranged around the resonant structure.
The resonance structure is composed of an upper excitation electrode layer 10, a first piezoelectric film layer 205 and a lower excitation electrode layer 11 from top to bottom; the 4 stress loading structures are respectively a front stress loading structure, a left stress loading structure, a right stress loading structure and a rear stress loading structure; the front side stress loading structure is composed of a front side upper modulation electrode layer 1, a front side second piezoelectric film layer 201 and a front side lower modulation electrode layer 3 from top to bottom; the left stress loading structure is composed of a left upper modulation electrode layer 4, a left second piezoelectric film layer 202 and a left lower modulation electrode layer 5 from top to bottom; the right stress loading structure is composed of a right upper modulating electrode layer 6, a right second piezoelectric film layer 203 and a right lower modulating electrode layer 7 from top to bottom; the rear side stress loading structure is constituted by the rear side upper modulation electrode layer 8, the rear side second piezoelectric thin film layer 204, and the rear side lower modulation electrode layer 9 from top to bottom.
The first piezoelectric film layer 205, the front second piezoelectric film layer 201, the left second piezoelectric film layer 202, the right second piezoelectric film layer 203 and the rear second piezoelectric film layer 204 are integrated, and are made of an integral AlN film, and the thickness of the integral AlN film is 200nm, so that the piezoelectric film has good thermal stability, thermal conductivity and insulativity, and has a piezoelectric effect and an elastic soft hardening effect, and when the Young modulus of the first piezoelectric film layer 205 is subjected to a large stress exceeding 0.8 Gpa, the Young modulus of the first piezoelectric film layer is obviously changed.
The upper excitation electrode layer 10, the front upper modulation electrode layer 1, the left upper modulation electrode layer 4, the right upper modulation electrode layer 6, the rear upper modulation electrode layer 8, the lower excitation electrode layer 11, the front lower modulation electrode layer 3, the left lower modulation electrode layer 5, the right lower modulation electrode layer 7 and the rear lower modulation electrode layer 9 are all made of Mo (molybdenum) materials, and the thicknesses are 10 nm, so that the three-dimensional piezoelectric ceramic material has the advantages of being lower in resistivity, higher in acoustic impedance and the like; wherein the upper excitation electrode layer 10 is not connected with the adjacent front side upper modulation electrode layer 1, the left side upper modulation electrode layer 4, the right side upper modulation electrode layer 6 and the rear side upper modulation electrode layer 8; the lower excitation electrode layer 11 is not connected with the adjacent front lower modulation electrode layer 3, left lower modulation electrode layer 5, right lower modulation electrode layer 7 and rear lower modulation electrode layer 9; the upper excitation electrode layer 10 and the lower excitation electrode layer 11 are square, and the side length is 20 μm; the front side upper modulating electrode layer 1, the left side upper modulating electrode layer 4, the right side upper modulating electrode layer 6, the rear side upper modulating electrode layer 8, the front side lower modulating electrode layer 3, the left side lower modulating electrode layer 5, the right side lower modulating electrode layer 7 and the rear side lower modulating electrode layer 9 are identical in shape and size, are gradually deformed along the symmetrical width of the symmetrical axis of the resonant structure, one end adjacent to the side of the resonant structure is a short side end, the other end is a long side end, the width of the short side end is 20 mu m, the width of the long side end is 40 mu m, the total length between the short side end and the long side end is 50 mu m, and the length of the long side end with the width of 40 mu m is 20 mu m.
The working principle of the electric tuning film bulk acoustic resonator based on the large stress loading structure provided by the embodiment is as follows:
When a direct current bias signal is simultaneously applied to the upper excitation electrode layer 10, the front upper modulation electrode layer 1, the left upper modulation electrode layer 4, the right upper modulation electrode layer 6, the rear upper modulation electrode layer 8, the lower excitation electrode layer 11, the front lower modulation electrode layer 3, the left lower modulation electrode layer 5, the right lower modulation electrode layer 7 and the rear lower modulation electrode layer 9, an electric field is formed in the corresponding front second piezoelectric thin film layer 201, left second piezoelectric thin film layer 202, right second piezoelectric thin film layer 203 and rear second piezoelectric thin film layer 204; based on the inverse piezoelectric effect, the front side second piezoelectric thin film layer 201, the left side second piezoelectric thin film layer 202, the right side second piezoelectric thin film layer 203, and the rear side second piezoelectric thin film layer 204 are stretched or contracted to both sides; because the front side second piezoelectric film layer 201, the left side second piezoelectric film layer 202, the right side second piezoelectric film layer 203 and the rear side second piezoelectric film layer 204 of the first piezoelectric film layer 205 are integrated, the first piezoelectric film layer 205 will shrink or stretch synchronously, i.e. receive a large stress exceeding 0.8 Gpa, so that the first piezoelectric film layer 205 with elastic soft hardening effect has obvious change of Young's modulus;
Since the resonant structure resonates under the action of the ac rf signal, and the resonant frequency is affected by the young's modulus of the material, the young's modulus of the first piezoelectric thin film layer 205 changes to cause a wide range of changes in the resonant frequency of the resonant structure;
based on the above process, the resonant frequency of the resonant structure can be adjusted in a large range by changing the size of the applied direct current bias signal, so that the mutual separation of the modulation signal (i.e. the direct current bias signal) and the excitation signal (i.e. the alternating current radio frequency signal) is realized, and finally, the flexible, rapid and adjustable film bulk acoustic resonator in a large range is realized.
Further, since the stress loading structure adopted in the embodiment is gradually deformed in width, the stress of the short side end adjacent to the resonant structure is amplified, and when the direct current bias signal is applied to all the stress loading structures at the same time, the stress of the short side end is further amplified, so that the first piezoelectric film layer 205 is subjected to a larger large stress, and the relative modulation rate of the resonant frequency is further increased.
Fig. 3 is a graph of simulation results of stress when a dc bias signal is applied to the electrically tuned thin film bulk acoustic resonator based on the large stress loading structure according to this embodiment, it is known that after the dc bias signal is applied to the stress loading structures symmetrically located around the resonant structure, the transition from voltage to stress can be achieved, and from the long side end to the short side end of the stress loading structure, the stress is gradually increased from 0.6 Gpa to 1.2 gpa, and the stress is simultaneously applied to the 4 stress loading structures, so that the first piezoelectric thin film layer 205 located in the middle is subjected to a large stress exceeding 2.3 Gpa.
As shown in fig. 4, when the applied dc bias signal increases from-500V to +500V, the series resonant frequency of the electrically tuned thin film bulk acoustic resonator based on the large stress loading structure increases from 19.72 GHz to 20.62 GHz, and the parallel resonant frequency increases from 20.43 GHz to 21.32 GHz, achieving a range of frequency modulation. Fig. 5 further illustrates this point, where the series resonant frequency achieves a relative modulation rate of 4.6%, and the parallel resonant frequency also has a relative modulation rate of 4.4%, which is 2-3 times the relative modulation rate of the existing intrinsic electric field modulation scheme, and is more suitable for application scenarios where the deviation of the resonant frequency of the devices in the integrated circuit is large.
The electric tuning film bulk acoustic resonator based on the large stress loading structure can realize the mutual separation of the direct current bias signal and the alternating current radio frequency signal, and has higher integration level and higher relative modulation rate of the resonant frequency.
Claims (8)
1. An electric tuning film bulk acoustic resonator based on a large stress loading structure is characterized by comprising a resonance structure and a plurality of stress loading structures symmetrically arranged around the resonance structure; the resonance structure is regular polygon with even number side, and is composed of a first piezoelectric film layer and two excitation electrode layers respectively arranged on the upper surface and the lower surface of the first piezoelectric film layer; the stress loading structure is formed by a second piezoelectric film layer and two modulating electrode layers respectively arranged on the upper surface and the lower surface of the second piezoelectric film layer;
The first piezoelectric film layer and the second piezoelectric film layer are integrated, and have a piezoelectric effect and an elastic soft hardening effect; the excitation electrode layer is not connected with the adjacent modulation electrode layer; by applying direct current bias signals to the two modulation electrode layers of the stress loading structure and applying alternating current radio frequency signals to the two excitation electrode layers of the resonance structure, mutual separation of the direct current bias signals and the alternating current radio frequency signals and resonance frequency adjustment are realized.
2. The electrically tunable thin film bulk acoustic resonator based on a high stress loading structure of claim 1, wherein the material of the first and second piezoelectric thin film layers is AlN, piezoceramic PZT or piezosingle crystal PMN-PT.
3. The electrically tunable thin film bulk acoustic resonator based on a high stress loading structure of claim 1, wherein the width of the long side end is at least 1.5 times the width of the short side end.
4. The electrically tunable thin film bulk acoustic resonator based on a high stress loading structure of claim 1, wherein the short side ends have the same width as the sides of the resonant structure.
5. The electrically tunable thin film bulk acoustic resonator based on a high stress loading structure of claim 1, wherein the distance between the short side end and the long side end is at least 2 times the side length of the resonant structure.
6. The electrically tunable thin film bulk acoustic resonator based on a high stress loading structure of claim 1 wherein the length to width dimensions of the two modulating electrode layers are at least 100 times the thickness.
7. The electrically tunable thin film bulk acoustic resonator based on a high stress loading structure of claim 1, wherein the thickness of the first piezoelectric thin film layer and the second piezoelectric thin film layer is at least 10 times the thickness of the excitation electrode layer.
8. The electrically tuned thin film bulk acoustic resonator based on the large stress loading structure according to claim 1, wherein the thicknesses of the first piezoelectric thin film layer and the second piezoelectric thin film layer are 100-200 nm, and the thicknesses of the excitation electrode layer and the modulation electrode layer are 5-10 nm.
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