CN115603698B - Tunable film bulk acoustic resonator based on elastic softening effect - Google Patents
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02157—Dimensional parameters, e.g. ratio between two dimension parameters, length, width or thickness
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H9/125—Driving means, e.g. electrodes, coils
- H03H9/13—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials
- H03H9/131—Driving means, e.g. electrodes, coils for networks consisting of piezoelectric or electrostrictive materials consisting of a multilayered structure
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/02—Details
- H03H2009/02165—Tuning
- H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
- H03H2009/02188—Electrically tuning
- H03H2009/02196—Electrically tuning operating on the FBAR element, e.g. by direct application of a tuning DC voltage
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
Abstract
The invention discloses a tunable film bulk acoustic resonator based on an elastic softening effect, which belongs to the technical field of tunable resonators and comprises a resonant structure and stress loading structures symmetrically arranged at two sides of the resonant structure, wherein the stress loading structures comprise a first lower electrode, a first piezoelectric film layer and a first upper electrode which are sequentially arranged from bottom to top, and the resonant structure comprises a stress sensitive layer, a second lower electrode, a second piezoelectric film layer and a second upper electrode which are sequentially arranged from bottom to top; the stress sensitive layer has an elastic softening effect and is rigidly connected with the first piezoelectric film layers at two sides, and the second lower electrode is not connected with the first upper electrodes at two sides. The stress loading structure drives the stress sensitive layer rigidly connected with the stress sensitive layer under the inverse piezoelectric effect, so that the Young modulus of the stress sensitive layer is changed in a large range, and the film bulk acoustic resonator with a large range of tunability is realized.
Description
Technical Field
The invention belongs to the technical field of tunable resonators, and particularly relates to a tunable film bulk acoustic resonator based on an elastic softening effect.
Background
The rapid development of radio frequency communication technology has put forward the requirements of higher frequency band, higher performance, lower power consumption and smaller volume for radio frequency filter. The Film Bulk Acoustic Resonator (FBAR) has advantages of small volume, low cost and low power consumption, and is compatible with the mainstream CMOS (complementary metal oxide semiconductor) process of the current integrated circuit, so that it is widely applied to core rf components such as rf filters, oscillators, diplexers, low noise amplifiers, and the like. In many research directions of the FBAR technology, frequency modulation is a research hotspot in academia and industry all the time, and has great application value in the aspects of realizing frequency consistency, temperature compensation, frequency band expansion and the like of devices. In particular, in the actual production process of FBAR devices, there is a problem that frequency of thousands of individual devices in a silicon wafer is inconsistent due to process consistency problems, which will pose a great challenge to the yield of devices. In addition, even if the frequency of the qualified device meets the factory specification, in the specific use process, certain deviation of the resonant frequency of the device, such as temperature drift problem caused by environmental temperature change, can occur sometimes due to different application environments. Therefore, in practical applications, it is often desired that the FBAR device has a frequency trimming function with a certain capability, so that the FBAR device reaches a desired frequency value, and the above problem is effectively alleviated. Even if the frequency modulation range of the device is large enough, the cross-channel communication is hopeful to be realized, so that the number of filter modules of communication equipment such as mobile phones is reduced, and the device has huge application potential in the commercial field. In summary, the FBAR resonator with flexibility, rapidness and large adjustable range has a very wide application prospect.
Current tuning schemes typically reversibly adjust the resonant frequency of an FBAR over a range based on changes in external conditions such as light, temperature, electric or magnetic fields. The optical modulation scheme is used for modulating the resonant frequency of the device rapidly and flexibly by changing the electrical characteristics of the FBAR through adopting the resonant area of the light irradiation device, but an optical system for generating an optical control signal is high in cost and large in size and is incompatible with the manufacturing process of the FBAR, and monolithic integration with the FBAR chip is difficult to realize. The temperature modulation scheme is to add a temperature modulation layer in the FBAR, and realize frequency modulation by changing the Young modulus of the temperature modulation layer, but the scheme needs to add a heating resistor to change the temperature, and the conversion from electric energy to heat energy can generate larger loss and hysteresis, so that the response speed is slow and the power consumption is large. The magnetic field modulation scheme is to add a magnetic sensitive material layer in the FBAR, change the Young modulus of the magnetic sensitive layer through an external magnetic field, realize a larger range of frequency modulation, but require an additional magnetic field applying device, and generate loss in the process of converting electric loading into a magnetic field, so that the problems of larger volume and larger power consumption exist. The intrinsic electric field modulation scheme is characterized in that the Young modulus of the piezoelectric material is changed by applying direct current bias on the electrode of the FBAR, so that the modulation of the resonant frequency of the FBAR is realized, but because a modulation signal is directly applied on the original electrode, the problem that an excitation signal and the modulation signal interfere with each other exists, the intrinsic electric field modulation scheme is limited by the performance of the existing piezoelectric material, and the adjustable range is smaller. The voltage-controlled variable capacitance modulation scheme is that an electrode bridge is arranged on an electrode of the FBAR, when direct-current voltage is applied to the electrode bridge, the distance between a top electrode and the electrode bridge is changed, and then the equivalent series capacitance of the FBAR device is changed, and finally the modulation of the series resonance frequency is realized. Therefore, there is a need to propose a novel tunable resonator to solve the above-mentioned problems.
Disclosure of Invention
Aiming at the problems of small adjustable range, large volume and large power consumption of mutual interference of an excitation signal and a modulation signal in the prior art, the invention provides the tunable film bulk acoustic resonator based on the elastic softening effect, which remarkably improves the tuning range of the film bulk acoustic resonator and has the advantages of small volume, low cost, low power consumption, easy mass production and the like.
The technical scheme adopted by the invention is as follows:
the tunable film bulk acoustic resonator based on the elastic softening effect is characterized by comprising a resonance structure and stress loading structures symmetrically positioned at two sides of the resonance structure;
the stress loading structure comprises a first lower electrode, a first piezoelectric film layer and a first upper electrode which are laminated in sequence from bottom to top;
the resonance structure comprises a stress sensitive layer, a second lower electrode, a second piezoelectric film layer and a second upper electrode which are sequentially laminated from bottom to top;
the stress sensitive layer has an elastic softening effect, and when the stress is applied, the Young modulus of the stress sensitive layer is changed; the stress sensitive layer is rigidly connected with the first piezoelectric film layers at two sides, and the second lower electrode is not connected with the first upper electrodes at two sides.
Further, the stress sensitive layer is made of monocrystalline copper, monoclinic hafnium oxide and the like.
Further, the materials of the first piezoelectric film layer and the second piezoelectric film layer have piezoelectric effect; preferably, the materials of the first piezoelectric thin film layer and the second piezoelectric thin film layer are piezoelectric ceramics PZT (lead zirconate titanate), alN (aluminum nitride), piezoelectric single crystal PMN-PT (lead magnesium niobate-lead titanate), or the like.
Further, the thickness of the first piezoelectric film layer is the same as that of the stress sensitive layer.
Further, the stress loading structures on both sides are the same size.
Further, the length-width dimensions of the first lower electrode and the first upper electrode are at least 500 times the thickness.
Further, the thickness of the stress sensitive layer is 20 times that of the second lower electrode or the second upper electrode.
Further, the thicknesses of the first piezoelectric film layer, the stress sensitive layer and the second piezoelectric film layer are 30-100 nm, and the thicknesses of the first lower electrode and the first upper electrode are 5-20 nm.
The working principle of the tunable film bulk acoustic resonator based on the elastic softening effect provided by the invention is as follows:
when direct current bias signals are respectively applied to the first lower electrode and the first upper electrode of the stress loading structures at two sides, an electric field is formed in the first piezoelectric film layers at two sides; the first piezoelectric film layer stretches or contracts to two sides due to the inverse piezoelectric effect; the stress sensitive layer is rigidly connected with the first piezoelectric film layers at two sides, and synchronously contracts or stretches, namely, the stress sensitive layer is stressed, so that the stress sensitive layer with the elastic softening effect is changed in Young modulus;
the resonance structure formed by laminating the stress sensitive layer, the second lower electrode, the second piezoelectric film layer and the second upper electrode resonates under the action of an alternating current radio frequency signal, and the resonance frequency is influenced by the Young modulus of the material, so that the Young modulus of the stress sensitive layer is changed to cause the resonance frequency of the resonance structure to be changed in a larger range;
based on the above process, the resonant frequency of the resonant structure can be adjusted in a large range by changing the size of the applied direct current bias signal, so that the mutual separation of the modulation signal (i.e. the direct current bias signal) and the excitation signal (i.e. the alternating current radio frequency signal) is realized, and finally, the flexible, rapid and adjustable film bulk acoustic resonator in a large range is realized.
Compared with the prior art, the invention has the beneficial effects that:
1. the invention provides a tunable film bulk acoustic resonator based on an elastic softening effect, wherein stress loading structures are symmetrically arranged on two sides of a resonant structure, and the Young modulus of a stress sensitive layer rigidly connected with the stress loading structures is driven to change in a large range under the inverse piezoelectric effect, so that the film bulk acoustic resonator is tunable in a large range;
2. according to the modulation mode adopted by the invention, a direct-current Bias signal is applied to a first lower electrode and a first upper electrode of a stress loading structure at two sides, an alternating-current radio-frequency signal is applied to a second lower electrode and a second upper electrode of a resonance structure, and an additional Bias (Bias Tee) is not needed for signal superposition, so that effective separation of a modulation signal and an excitation signal is realized;
3. the invention adopts a stress loading mode, converts voltage into stress according to the inverse piezoelectric effect, the conversion process is very rapid, and the generated leakage current is in nanoampere culture (10) -9 A) The level is completely reversible within the elastic limit of the material of the first piezoelectric film layer, and the low-power consumption, rapid and flexible large-scale adjustment is realized.
Drawings
Fig. 1 is a schematic three-dimensional structure of a tunable thin film bulk acoustic resonator based on elastic softening effect according to embodiment 1 of the present invention;
FIG. 2 is a diagram of the results of the overall stress simulation of the tunable thin film bulk acoustic resonator based on the elastic softening effect and a partial enlarged view of the stress sensitive layer according to embodiment 1 of the present invention;
FIG. 3 is a graph showing the results of a displacement simulation of the tunable thin film bulk acoustic resonator according to embodiment 1 of the present invention at a resonant frequency based on the elastic softening effect;
FIG. 4 is a graph showing the simulation result of amplitude-frequency curves of the tunable thin film bulk acoustic resonator based on the elastic softening effect according to the embodiment 1 of the present invention under the application of different DC bias signals;
FIG. 5 is a graph showing simulation results of series and parallel resonance frequencies of the tunable thin film bulk acoustic resonator based on elastic softening effect according to embodiment 1 of the present invention under application of different DC bias signals;
the description of the various references in the drawings is as follows:
1. a right first lower electrode; 2. a right side first piezoelectric thin film layer; 3. a right first upper electrode; 4. a stress sensitive layer; 5. a second lower electrode; 6. a second piezoelectric thin film layer; 7. a second upper electrode; 8. a left first lower electrode; 9. a left side first piezoelectric thin film layer; 10. a left first upper electrode.
Detailed Description
The present invention will be described in further detail with reference to the drawings and examples, in order to make the objects, technical solutions and advantages of the present invention more apparent. It should be understood that the specific embodiments described herein are for purposes of illustration only and are not intended to limit the scope of the invention.
Example 1
The embodiment provides a tunable film bulk acoustic resonator based on an elastic softening effect, wherein a three-dimensional structure is shown in figure 1 and comprises a resonance structure and stress loading structures symmetrically arranged at the left side and the right side of the resonance structure;
the stress loading structure positioned on the right side of the resonance structure comprises a right first lower electrode 1, a right first piezoelectric film layer 2 and a right first upper electrode 3 which are laminated in sequence from bottom to top; the resonance structure comprises a stress sensitive layer 4, a second lower electrode 5, a second piezoelectric film layer 6 and a second upper electrode 7 which are laminated in sequence from bottom to top; the stress loading structure located on the left side of the resonance structure includes a left first lower electrode 8, a left first piezoelectric thin film layer 9, and a left first upper electrode 10 laminated in this order from bottom to top.
The stress sensitive layer 4 is respectively and rigidly connected with the right first piezoelectric film layer 2 and the left first piezoelectric film layer 9, and the second lower electrode 5 is not connected with the right first upper electrode 3 and the left first upper electrode 10.
In this embodiment, the right first bottom electrode 1, the right first top electrode 3, the second bottom electrode 5, the second top electrode 7, the left first bottom electrode 8 and the left first top electrode 10 are made of Mo (molybdenum) material, and the thicknesses are 5 nm, which has the advantages of lower resistivity and higher acoustic impedance; the right side first piezoelectric film layer 2, the second piezoelectric film layer 6 and the left side first piezoelectric film layer 9 are all made of AlN materials, have the thickness of 100 nm and have good thermal stability, thermal conductivity and insulativity; the stress sensitive layer 4 is made of single crystal copper material, has the thickness of 100 nm, and has good ductility and a large range of elastic softening effect; the length of the second lower electrode 5, the second piezoelectric film layer 6 and the second upper electrode 7 are all 20 micrometers, and the width is all 50 micrometers; the lengths of the right first lower electrode 1, the right first upper electrode 3, the left first lower electrode 8 and the left first upper electrode 10 are 39 μm, and the widths thereof are 50 μm.
The working principle of the tunable film bulk acoustic resonator based on the elastic softening effect provided by the embodiment is as follows:
when a direct current bias signal is applied to the right first lower electrode 1, the right first upper electrode 3, the left first lower electrode 8 and the left first upper electrode 10, respectively, an electric field is formed in the right first piezoelectric thin film layer 2 and the left first piezoelectric thin film layer 9; the right side first piezoelectric film layer 2 and the left side first piezoelectric film layer 9 are stretched or contracted to both sides due to the inverse piezoelectric effect; the stress sensitive layer 4 is respectively and rigidly connected with the right first piezoelectric film layer 2 and the left first piezoelectric film layer 9, and is synchronously contracted or stretched, namely, is subjected to stress, so that the stress sensitive layer 4 with elastic softening effect is changed in Young modulus;
the resonance structure formed by laminating the stress sensitive layer 4, the second lower electrode 5, the second piezoelectric film layer 6 and the second upper electrode 7 resonates under the action of an alternating current radio frequency signal, and the resonance frequency is influenced by the Young modulus of the material, so that the Young modulus of the stress sensitive layer is changed to cause the resonance frequency of the resonance structure to be changed in a larger range;
based on the above process, the resonant frequency of the resonant structure can be adjusted in a large range by changing the size of the applied direct current bias signal, so that the mutual separation of the modulation signal (i.e. the direct current bias signal) and the excitation signal (i.e. the alternating current radio frequency signal) is realized, and finally, the flexible, rapid and adjustable film bulk acoustic resonator in a large range is realized.
Fig. 2 is a diagram of the overall stress simulation result of the tunable thin film bulk acoustic resonator based on the elastic softening effect and a partial enlarged view of the stress sensitive layer according to the present embodiment, and it can be known that after a direct current bias signal is applied to the stress loading structures symmetrically located on the left and right sides of the resonant structure, the transition from voltage to stress can be achieved, so that the stress sensitive layer 4 located in the middle is subjected to the stress.
Fig. 3 is a graph showing the results of displacement simulation when the tunable thin film bulk acoustic resonator based on the elastic softening effect according to the present embodiment is at the resonant frequency, and it can be seen that the vibration mode of the resonant structure formed by laminating the stress sensitive layer 4, the second lower electrode 5, the second piezoelectric thin film layer 6 and the second upper electrode 7 is the thickness direction.
As shown in fig. 4, when the dc bias signal increases from-4.9V to +4.8V, the resonance frequency of the tunable thin film bulk acoustic resonator based on the elastic softening effect also increases from 5.6 GHz to 8.7 GHz, achieving a very large range of frequency modulation. This is further illustrated in fig. 5, where the series resonant frequency achieves a 55% modulation range and the parallel resonant frequency also has a 50% modulation range.
The tunable film bulk acoustic resonator based on the elastic softening effect can remarkably improve the tuning range and has the advantages of small volume, low cost, low power consumption, easiness in mass production and the like. It should be noted herein that modifications can be made by those skilled in the art without departing from the inventive concept, and these are all within the scope of the present invention.
Claims (7)
1. The tunable film bulk acoustic resonator based on the elastic softening effect is characterized by comprising a resonance structure and stress loading structures symmetrically positioned at two sides of the resonance structure;
the stress loading structure comprises a first lower electrode, a first piezoelectric film layer and a first upper electrode which are laminated in sequence from bottom to top;
the resonance structure comprises a stress sensitive layer, a second lower electrode, a second piezoelectric film layer and a second upper electrode which are sequentially laminated from bottom to top;
the stress sensitive layer has an elastic softening effect and is rigidly connected with the first piezoelectric film layers at two sides; the second lower electrode is not connected with the first upper electrodes at the two sides;
by applying direct current bias signals to the first lower electrode and the first upper electrode of the stress loading structure on two sides and applying alternating current radio frequency signals to the second lower electrode and the second upper electrode of the resonance structure, mutual separation of the direct current bias signals and the alternating current radio frequency signals and resonance frequency adjustment are realized.
2. The tunable thin film bulk acoustic resonator based on the elastic softening effect of claim 1, wherein the material of the stress sensitive layer is single crystal copper or monoclinic hafnium dioxide.
3. The tunable thin-film bulk acoustic resonator based on the elastic softening effect according to claim 1, wherein the materials of the first piezoelectric thin-film layer and the second piezoelectric thin-film layer are piezoelectric ceramics PZT, alN or piezoelectric single crystal PMN-PT.
4. The tunable thin-film bulk acoustic resonator based on the elastic softening effect of claim 1, wherein the thickness of the first piezoelectric thin-film layer is the same as the thickness of the stress-sensitive layer.
5. The tunable thin film bulk acoustic resonator based on the elastic softening effect of claim 1, wherein the stress sensitive layer has a thickness of 20 times the thickness of the second lower electrode or the second upper electrode.
6. The tunable thin film bulk acoustic resonator based on the elastic softening effect according to claim 1, wherein the thicknesses of the first piezoelectric thin film layer, the stress sensitive layer and the second piezoelectric thin film layer are 30-100 nm, and the thicknesses of the first lower electrode and the first upper electrode are 5-20 nm.
7. The tunable thin film bulk acoustic resonator based on the elastic softening effect of claim 1, wherein the length-to-width dimensions of the first lower electrode and the first upper electrode are at least 500 times the thickness.
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| CN115603698A (en) | 2023-01-13 |
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