CN103647507A - High-temperature voltage controlled oscillator - Google Patents
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- CN103647507A CN103647507A CN201310675486.4A CN201310675486A CN103647507A CN 103647507 A CN103647507 A CN 103647507A CN 201310675486 A CN201310675486 A CN 201310675486A CN 103647507 A CN103647507 A CN 103647507A
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Abstract
The invention provides a high-temperature voltage controlled oscillator and belongs to the technical field of electronics. The high-temperature voltage controlled oscillator comprises a frequency selection and positive feedback network and an amplifier. The high-temperature voltage controlled oscillator is characterized in that the frequency selection and positive feedback network comprises an inductor, a first capacitor, a second capacitor, a third capacitor, a fourth capacitor and a fifth capacitor, wherein the fifth capacitor is a variable capacitor; the amplifier comprises a first semiconductor field effect transistor based on a wide-gap semiconductor material, and a first resistor; and the first semiconductor field effect transistor is a Sic semiconductor field effect transistor. The high-temperature voltage controlled oscillator also comprises a source grade follower and a bias circuit. The output of the oscillator provided by the invention can be used for wireless sensing, communication and data transmission at a high temperature, and a SiCJFET or other equivalent wide-gap semiconductors are used as core elements of a high-temperature circuit so that the problem of circuit failure caused by damage of a common semiconductor device at the high temperature in a high temperature condition or other extreme conditions can be effectively solved; and the oscillator provided by the invention employs a GaNLED as a varactor so as to be adaptive to a high temperature environment.
Description
Technical field
The invention belongs to electronic technology field, specifically a kind of high-temperature high-pressure controlled oscillator.
Background technology
Sensing and radio communication under space and other extreme conditions often relate to hot environment.For example Venus probe, the surface of Venus reaches the temperature range of 500 ° of C.Therefore, how any landing all exists and work facing in the detector of Venus at so high temperature.Therefore the transducer that, can apply under adverse circumstances and extreme temperature receives much concern in the past few decades.The high temp sensitive element that some are advanced, if temperature and pressure transducer is at present still in the experimental stage.High-temperature electronic unit owing to lacking for sensor signal processing and wireless transmission, is greatly limited the application of these advanced sensing technologies.
When ambient temperature surpasses 300 ℃, conventional silicon or the electronic equipment of silicon-on-insulator (SOI) will lose efficacy.Therefore must use can bear higher temperature, energy gap is greater than the wide bandgap semiconductor element of 2eV, for example carborundum (SiC) and gallium nitride (GaN) semiconductor.The theoretical limit temperature of SiC and GaN device is higher than 600 C, still, is mainly intended at present the power electronic equipment of high voltage and large electric current for the exploitation of SiC device, for the exploitation of GaN device, is mainly intended for frequency applications and LED light-emitting diode.
Summary of the invention
The problem existing for prior art, the invention provides a kind of high-temperature high-pressure controlled oscillator.
Technical scheme of the present invention is:
A high-temperature high-pressure controlled oscillator, comprises frequency-selecting and positive feedback network and amplifier;
Described frequency-selecting and positive feedback network comprise inductor, the first capacitor, the second capacitor, the 3rd capacitor, the 4th capacitor and the 5th capacitor, wherein, the 5th capacitor is variable capacitance, one end of the first capacitor connects one end of the 5th capacitor, the other end of the first capacitor connects one end of the second capacitor, the other end of the second capacitor connects one end of the 3rd capacitor, the other end of the 3rd capacitor connects one end of the 4th capacitor, the other end of the 4th capacitor connects the other end of the 5th capacitor, one end of inductance is connected to the first capacitor, between the second capacitor, the other end of inductance is connected to the 4th capacitor, between the 5th capacitor, the other end of the 5th capacitor connects the negative pole of DC power supply,
Described amplifier comprises the first semiconductor field effect transistor and the first resistance based on semiconductor material with wide forbidden band; The grid of the first semiconductor field effect transistor is connected between the 3rd capacitor, the 4th capacitor of frequency-selecting and positive feedback network, the drain electrode of the first semiconductor field effect transistor connects DC power anode, the source electrode of the first semiconductor field effect transistor connects one end of the first resistance, the other end of the first resistance is connected to the other end of the 4th capacitor of frequency-selecting and positive feedback network, and one end of the first resistance is also connected between the 3rd capacitor, the 4th capacitor of frequency-selecting and positive feedback network.
Described the first semiconductor field effect transistor is SiC semiconductor field.
Described the 5th capacitor substitutes with GaN LED.
Described high-temperature high-pressure controlled oscillator adopts LTCC technique to make circuit board.
Described high-temperature high-pressure controlled oscillator, also comprise source class follower, this source class follower comprises the second semiconductor field effect transistor and the second resistance, the drain electrode of the second semiconductor field effect transistor connects the drain electrode of the first semiconductor field effect transistor, the grid of the second semiconductor field effect transistor is connected to the source class of the first semiconductor field effect transistor, the source class of the second semiconductor field effect transistor connects one end of the second resistance, and the other end of the second resistance connects the other end of the first resistance.
Described high-temperature high-pressure controlled oscillator, comprise biasing circuit, this circuit comprises the 3rd resistance and the 4th resistance, one end of the 3rd resistance is connected between the drain electrode and DC power anode of the first semiconductor field effect transistor, the other end of the 3rd resistance connects one end of the 4th resistance, the other end of the 3rd resistance is connected between the second electric capacity and the first electric capacity, then is connected with one end of the 4th resistance, and the other end of the 4th resistance is connected between the 4th electric capacity and inductance.
Described the second semiconductor field effect transistor is SiC semiconductor field.
Beneficial effect:
The invention provides a kind of circuit design of voltage controlled oscillator of the wireless application for extreme environments such as high temperature, realized the prototype of high-temperature high-pressure controlled oscillator, and the stability of the feasibility designing by high temperature test proof scheme and output frequency, the output of this oscillator can be used for the wireless sensing under high temperature, communication and transfer of data.
The present invention proposes to use SiC JFET or other equivalent wide band gap semiconductor devices as the core parts of high temperature circuit, and the at high temperature damage that effectively solves general semiconductor device under high temperature or other extreme cases causes circuit malfunction problem;
The present invention proposes under hot environment, to use ceramic material as the designing technique of circuit substrate;
The present invention's application GaN LED is as variable capacitance diode, to be applicable to hot environment.
The design of high-temperature high-pressure controlled oscillator comprises under the making of physical circuit design, prototype circuit and high temperature to be tested.
Described circuit design has provided the circuit design scheme of high-temperature high-pressure controlled oscillator, the selection of the definite and circuit parameter of frequency of oscillation.
The making of described prototype circuit, provides manufacture method and the technological process of prototype circuit plate.
Described high temperature test, realizes the performance test of prototype circuit under 25 ° of C of room temperature and 450 ° of C of high temperature.
Accompanying drawing explanation
Fig. 1 is the high-temperature high-pressure controlled oscillator circuit theory diagrams of the embodiment of the present invention 1;
Fig. 2 is the high-temperature high-pressure controlled oscillator circuit theory diagrams of the embodiment of the present invention 2;
Fig. 3 is the high-temperature high-pressure controlled oscillator circuit theory diagrams of the embodiment of the present invention 3;
The time-domain-simulation result of high-temperature high-pressure controlled oscillator when Fig. 4 is 450 ° of C of the embodiment of the present invention;
The simulation result of oscillator when Fig. 5 is 450 ° of C of the embodiment of the present invention;
Fig. 6 is that the high-temperature high-pressure controlled oscillator of the embodiment of the present invention is simplified circuit theory diagrams;
The test result of Sic JFET when Fig. 7 is 25 ° of C of the embodiment of the present invention;
The test result of Sic JFET when Fig. 8 is 450 ° of C of the embodiment of the present invention.
Embodiment
Below in conjunction with drawings and Examples, the present invention is elaborated.
embodiment 1
A high-temperature high-pressure controlled oscillator, comprises frequency-selecting and positive feedback network and amplifier;
As shown in Figure 1, frequency-selecting and positive feedback network comprise inductor L1, the first capacitor C1, the second capacitor C2, the 3rd capacitor C3, the 4th capacitor C4 and the 5th capacitor C5, wherein, capacitor C 1 is the coupling capacitance between high-frequency circuit and low-frequency channel, improve the performance of capacitance connecting three point type oscillator simultaneously, frequency range coverage coefficient is improved, be more suitable for frequency applications, and in changing the process of frequency of oscillation, the amplitude of oscillator signal is more steady.Capacitor C 2 realizes fine setting frequency effect, and improves the frequency stability of oscillating circuit.The five capacitor C5 in parallel with L1 is variable capacitance, is used for regulating the working frequency range of oscillator.
Parasitic capacitance in ignoring field effect transistor and circuit, the frequency of oscillation of the high-temperature high-pressure controlled oscillator of the present embodiment
fmainly by inductor L1 and the first capacitor C 1, the second capacitor C 2, the three capacitor C 3, the four capacitor C 4 and the 5th capacitor C 5, determined:
Positive feedback network is output signal to be sent back to the capacitance-voltage-distributing type positive feedback network of input, by the 3rd capacitor C 3 and the 4th capacitor C 4, forms positive feedback.
Frequency of oscillation and voltage-controlled sensitivity (voltage signal causes the change of carrier frequency) at the high-temperature high-pressure controlled oscillator of the present embodiment can be by adjusting the inductance L 1 in high temperature voltage-controlled oscillator circuit, the first capacitor C 1, the second capacitor C 2, the value of the 3rd capacitor C 3, the four capacitor C 4 and the 5th capacitor C 5 and realizing.
One end of the first capacitor C1 connects one end of the 5th capacitor C5, the other end of the first capacitor C1 connects one end of the second capacitor C2, the other end of the second capacitor C2 connects one end of the 3rd capacitor C3, the other end of the 3rd capacitor C3 connects one end of the 4th capacitor C4, the other end of the 4th capacitor C4 connects the other end of the 5th capacitor C5, one end of inductance L 1 is connected to the first capacitor C1, between the second capacitor C2, the other end of inductance L 1 is connected to the 4th capacitor C4, between the 5th capacitor C5, the other end of the 5th capacitor C5 connects the negative pole of DC power supply V1.
Amplifier comprises the first semiconductor field effect transistor J1 and the first resistance R 1 based on semiconductor material with wide forbidden band; The grid of the first semiconductor field effect transistor J1 is connected between the 3rd capacitor C3, the 4th capacitor C4 of frequency-selecting and positive feedback network, the drain electrode of the first semiconductor field effect transistor J1 connects DC power anode, the source electrode of the first semiconductor field effect transistor J1 connects one end of the first resistance R 1, the other end of the first resistance is connected to the other end of the 4th capacitor C4 of frequency-selecting and positive feedback network, and one end of the first resistance R 1 is also connected between the 3rd capacitor C3, the 4th capacitor C4 of frequency-selecting and positive feedback network.
The first semiconductor field effect transistor J1 is SiC semiconductor field.
The high-temperature high-pressure controlled oscillator of the present embodiment is the typical level capacitive feedback bikini oscillator that leaks altogether, comprises amplifier circuit, frequency-selective network and positive feedback network.After oscillator switches on power, start to have transient current to produce, through constantly it being amplified, frequency-selecting, feedback, the repeatedly circulation such as amplifies again, final formation self-oscillation, a part for input signal is sent back to input and do input signal, thereby just produced the sine wave signal output that certain frequency is exported.
The feasibility that the present embodiment designs by high temperature test proof scheme and the stability of output frequency, the output of this oscillator can be used for the wireless sensing under high temperature, communication and transfer of data.
High-temperature high-pressure controlled oscillator adopts LTCC technique to make circuit board, to verify its function.Because the working temperature of high-temperature high-pressure controlled oscillator is 450 ℃, far above conventional printed circuit board (PCB) (PCB) material and circuit manufacturing technology, therefore the prototype circuit plate of high-temperature oscillation device is used LTCC (Low Temperature Co-fired Ceramic, LTCC) technique to realize in the present embodiment.
LTCC make flow process mainly contain batch mixing, curtain coating, punching, filling perforation, silk screen printing, lamination, etc. the master operations such as static pressure, binder removal sintering.Concrete making step is as follows:
Step 1: batch mixing and curtain coating
Organic substance (being mainly comprised of polymeric binder and the plasticizer that is dissolved in solution) and inorganic matter (being comprised of pottery and glass) composition are mixed by a certain percentage, by the method for ball milling, mill and homogenizing, then be cast on the carrier band of a movement (being generally polyester film), by a dry section, remove all solvents, by controlling scraper gap, curtain coating becomes needed thickness.The general thickness tolerance of this technique is ± 6%.
Step 2: punching
Utilize mechanical stamping, boring or laser drilling to form through hole.Through hole is the aperture (typically having a diameter from 0.1-0.2mm) of getting on ceramic chips, is used on different layers with interconnection circuit.In this stage, also want punching die hole, the aligning while helping lamination; Automatic aligning when mating holes is used for printed conductor and medium.
Step 3: printing
Utilize the thick film screen printing technology of standard conductor paste is printed and dry.Filling through hole and conductor fig are dried by related process temperature and time in box or chain-conveyer furnace.As required, integrated resistor, capacitor and the inductor of needs can be printed and dry in this stage.
Step 4: filling through hole
Utilize traditional thick film silk screen printing or template extruding that the conductor paste of the high solid granule content of special formulation is filled into through hole.
Step 5: binder removal and sintering
Region between 200-500 ℃ is called as organic binder removal district (suggestion is incubated minimum 60min at this region lamination).Then at 5-15min, lamination is burnt altogether to peak temperature (being generally 850 ℃).Atmosphere is burnt till metallized typical binder removal and sintering curve can be used 2-10h.The parts that burn till are ready to rear firing technique, as printed conductor on end face and precision resistor, then at sintering in atmosphere.If Cu is for metallization, sintering must carry out in N2 chain-conveyer furnace.
Step 6: check
(as required) circuit is carried out to laser resistor trimming, test, section and check, (according to actual needs) available solder brazing lead-in wire or fin in LTCC encapsulation.
For guaranteeing high-temperature stability, the QG150 metal paste making that the multilayer circuit board of the present embodiment adopts Du Pont's 951 ceramic chips and matches.SiC JFET, high temperature capacitor and resistance are to utilize high-temperature adhesives to stick on LTCC circuit board, by screen process press, planar inductor is directly printed on the top surface of LTCC ceramic wafer, the making of the prototype circuit of the present embodiment also can realize by thick film screen printing technique on other ceramic substrates such as aluminium oxide.
High-temperature high-pressure controlled oscillator to the present embodiment carries out high temperature test, realizes the performance test of prototype circuit under 25 ° of C of room temperature and 450 ° of C of high temperature.
Prototype board is placed on an electric hot plate to carry out high temperature test.By one independently thermocouple carry out the bottom temp of supervisory circuit plate.Circuit is by 15V DC power supply.The voltage control signal of high-temperature high-pressure controlled oscillator is 5 kHz that generated by Agilent 33220A function generator, the square-wave input signal of the peak-to-peak value of 0.5 V.Power supply, ground connection and square-wave input signal are to be connected to circuit board by probe, and the RF signal of circuit board output simultaneously receives by a whip antenna being connected with Tyke RSA3303B real-time spectrum analyzer.Spectrum analyzer by the signal receiving in machine directly demodulation to recover original square wave.
The temperature range of test is from room temperature to 450 ℃.At 25 ℃ and 450 ℃, test result respectively as shown in Figure 7 and Figure 8.
In Fig. 7, the frequency spectrum of the reception signal recording, as Fig. 7 (a), can be found out, in the temperature range of 450 ℃, all can obtain very strong and clean RF signal.Carrier frequency is approximately 60 MHz, slightly lower than design load.The power receiving reduces to-22.7 dBm from-11.3 dBm, and this is mainly that the decay of carborundum mutual conductance and the loss of electric capacity and inductance increase during due to high temperature.As shown in Figure 7 (b) shows, this frequency range will be carried out fm demodulation for spectrum analyzer to peaks spectrum (around peak 500KHz span), can obviously find out that carrier wave is to be formed by low-frequency square-wave signal modulation.In whole temperature range, can observe one clean, almost the square wave of undistorted 5 kHz, shows that frequency modulation(FM) and the wireless transmission of the high-temperature high-pressure controlled oscillator of the present embodiment is successful.In the time of 25 ℃, the frequency change that the voltage-controlled signal of 0.5V causes is approximately 60 kHz.
In Fig. 8, the frequency spectrum of the reception signal recording is as Fig. 8 (a), peaks spectrum as shown in Figure 7 (b) shows, at 450 ℃, the frequency change that the voltage-controlled signal of 0.5V causes is reduced to 40kHz, and the decline of this voltage-controlled sensitivity is mainly because the change of GaN LED electric capacity under certain voltage reduces and causes with the increase of temperature.Can to regulate, control sensitivity by adjusting the electric capacity of corresponding circuit element in high-temperature high-pressure controlled oscillator as requested.More obvious when the noise component(s) of demodulation waveforms compares 25 ℃ at 450 ℃, and when temperature is changed to 450 ℃ from 25 ℃, the frequency of oscillation of high-temperature high-pressure controlled oscillator also drops to 59.534MHz from 60.481MHz.
When temperature is in 25 ° C to 450 ° C excursion, the output frequency of high-temperature high-pressure controlled oscillator is basicly stable at 60MHz, and the mobility of output frequency is only 1.5%, for the setting of carrier frequency in wireless radio frequency transmission provides effective solution.
embodiment 2
A high-temperature high-pressure controlled oscillator, comprises frequency-selecting and positive feedback network and amplifier;
As shown in Figure 2, frequency-selecting and positive feedback network comprise inductor L1, the first capacitor C1, the second capacitor C2, the 3rd capacitor C3, the 4th capacitor C4 and the 5th capacitor C5, wherein, the 5th capacitor C5 is variable capacitance, in side circuit, for adapting to high-temperature work environment, adopt GaN LED.One end of the first capacitor C1 connects one end of the 5th capacitor C5, the other end of the first capacitor C1 connects one end of the second capacitor C2, the other end of the second capacitor C2 connects one end of the 3rd capacitor C3, the other end of the 3rd capacitor C3 connects one end of the 4th capacitor C4, the other end of the 4th capacitor C4 connects the other end of the 5th capacitor C5, one end of inductance L 1 is connected to the first capacitor C1, between the second capacitor C2, the other end of inductance L 1 is connected to the 4th capacitor C4, between the 5th capacitor C5, the other end of the 5th capacitor C5 connects the negative pole of DC power supply V1.
Amplifier comprises the first semiconductor field effect transistor J1 and the first resistance R 1 based on semiconductor material with wide forbidden band; The first semiconductor field effect transistor J1 is SiC semiconductor field.
The grid of the first semiconductor field effect transistor J1 is connected between the 3rd capacitor C3, the 4th capacitor C4 of frequency-selecting and positive feedback network, the drain electrode of the first semiconductor field effect transistor J1 connects DC power anode, the source electrode of the first semiconductor field effect transistor J1 connects one end of the first resistance R 1, the other end of the first resistance is connected to the other end of the 4th capacitor C4 of frequency-selecting and positive feedback network, and one end of the first resistance R 1 is also connected between the 3rd capacitor C3, the 4th capacitor C4 of frequency-selecting and positive feedback network.
Because the output impedance of amplifier circuit is generally higher, conventionally at several kilo-ohms to tens kilo-ohms, if the input impedance of rear class is smaller, signal just has suitable part loss in the output resistance of prime so.Therefore the present embodiment improves on the basis of the high-temperature high-pressure controlled oscillator of embodiment 1, has increased source class follower to realize buffering and isolation.Another effect of source class follower is that electric current is amplified, thereby improves the power output of oscillator signal.
Source class follower comprises the second semiconductor field effect transistor J2 and the second resistance R 2; The second semiconductor field effect transistor is SiC semiconductor field.
The drain electrode of the second semiconductor field effect transistor J2 connects the drain electrode of the first semiconductor field effect transistor J1, the grid of the second semiconductor field effect transistor J2 is connected to the source class of the first semiconductor field effect transistor J1, the source class of the second semiconductor field effect transistor J2 connects one end of the second resistance R 2, and the other end of the second resistance R 2 connects the other end of the first resistance R 1.
High-temperature high-pressure controlled oscillator adopts LTCC technique to make circuit board, to verify its function, and the high-temperature high-pressure controlled oscillator of the present embodiment is carried out to high temperature test, realizes the performance test of prototype circuit under 25 ° of C of room temperature and 450 ° of C of high temperature.
embodiment 3
A high-temperature high-pressure controlled oscillator, comprises frequency-selecting and positive feedback network and amplifier;
As shown in Figure 3, frequency-selecting and positive feedback network comprise inductor L1, the first capacitor C1, the second capacitor C2, the 3rd capacitor C3, the 4th capacitor C4 and the 5th capacitor C5, and wherein, the 5th capacitor C5 is variable capacitance, adopt GaN LED.One end of the first capacitor C1 connects one end of the 5th capacitor C5, the other end of the first capacitor C1 connects one end of the second capacitor C2, the other end of the second capacitor C2 connects one end of the 3rd capacitor C3, the other end of the 3rd capacitor C3 connects one end of the 4th capacitor C4, the other end of the 4th capacitor C4 connects the other end of the 5th capacitor C5, one end of inductance L 1 is connected to the first capacitor C1, between the second capacitor C2, the other end of inductance L 1 is connected to the 4th capacitor C4, between the 5th capacitor C5, the other end of the 5th capacitor C5 connects the negative pole of DC power supply V1.
Amplifier comprises the first semiconductor field effect transistor J1 and the first resistance R 1 based on semiconductor material with wide forbidden band; The first semiconductor field effect transistor J1 is SiC semiconductor field.
The grid of the first semiconductor field effect transistor J1 is connected between the 3rd capacitor C3, the 4th capacitor C4 of frequency-selecting and positive feedback network, the drain electrode of the first semiconductor field effect transistor J1 connects DC power anode, the source electrode of the first semiconductor field effect transistor J1 connects one end of the first resistance R 1, the other end of the first resistance is connected to the other end of the 4th capacitor C4 of frequency-selecting and positive feedback network, and one end of the first resistance R 1 is also connected between the 3rd capacitor C3, the 4th capacitor C4 of frequency-selecting and positive feedback network.
High-temperature high-pressure controlled oscillator also comprises source class follower, and this source class follower comprises the second semiconductor field effect transistor J2 and the second resistance R 2; The second semiconductor field effect transistor is SiC semiconductor field.
The drain electrode of the second semiconductor field effect transistor J2 connects the drain electrode of the first semiconductor field effect transistor J1, the grid of the second semiconductor field effect transistor J2 is connected to the source class of the first semiconductor field effect transistor J1, the source class of the second semiconductor field effect transistor J2 connects one end of the second resistance R 2, and the other end of the second resistance R 2 connects the other end of the first resistance R 1.
In order further to stablize the output frequency under high temperature, the present embodiment has added R3 on the basis of embodiment 2, the biasing circuit that R4 forms is to stablize output, high-temperature high-pressure controlled oscillator also comprises biasing circuit, this circuit comprises the 3rd resistance R 3 and the 4th resistance R 4, one end of the 3rd resistance R 3 is connected between the drain electrode and DC power supply V1 positive pole of the first semiconductor field effect transistor J1, the other end of the 3rd resistance R 3 connects one end of the 4th resistance R 4, the other end of the 3rd resistance R 3 be connected to that the second electric capacity goes out and the first capacitor C 1 between, be connected with one end of the 4th resistance R 4 again, the other end of the 4th resistance R 4 is connected between the 4th electric capacity R4 and inductance L 1.
When input signal is applied to variable capacitance diode (C5) above, the variation of signal voltage will change the 5th capacitor C 5 of variable capacitance diode, and finally modulate high-temperature oscillation device generation RF carrier frequency.Fig. 4, Fig. 5 have provided respectively the time-domain and frequency-domain simulation result of RF oscillator, and result shows that oscillator will produce the RF carrier wave of an about 65MHz.
High-temperature high-pressure controlled oscillator adopts LTCC technique to make circuit board, to verify its function, and the high-temperature high-pressure controlled oscillator of the present embodiment is carried out to high temperature test, realizes the performance test of prototype circuit under 25 ° of C of room temperature and 450 ° of C of high temperature.
The high-temperature high-pressure controlled oscillator of the present embodiment also can adopt simplifies circuit realization as shown in Figure 6.Circuit difference shown in Fig. 6 and Fig. 3 is that Fig. 6 is common gate oscillator, and both are all capacitive feedback bikini oscillator, and its operation principle is consistent.
Claims (7)
1. a high-temperature high-pressure controlled oscillator, comprise frequency-selecting and positive feedback network and amplifier, it is characterized in that: described frequency-selecting and positive feedback network comprise inductor, the first capacitor, the second capacitor, the 3rd capacitor, the 4th capacitor and the 5th capacitor, wherein, the 5th capacitor is variable capacitance, one end of the first capacitor connects one end of the 5th capacitor, the other end of the first capacitor connects one end of the second capacitor, the other end of the second capacitor connects one end of the 3rd capacitor, the other end of the 3rd capacitor connects one end of the 4th capacitor, the other end of the 4th capacitor connects the other end of the 5th capacitor, one end of inductance is connected to the first capacitor, between the second capacitor, the other end of inductance is connected to the 4th capacitor, between the 5th capacitor, the other end of the 5th capacitor connects the negative pole of DC power supply,
Described amplifier comprises the first semiconductor field effect transistor and the first resistance based on semiconductor material with wide forbidden band; The grid of the first semiconductor field effect transistor is connected between the 3rd capacitor, the 4th capacitor of frequency-selecting and positive feedback network, the drain electrode of the first semiconductor field effect transistor connects DC power anode, the source electrode of the first semiconductor field effect transistor connects one end of the first resistance, the other end of the first resistance is connected to the other end of the 4th capacitor of frequency-selecting and positive feedback network, and one end of the first resistance is also connected between the 3rd capacitor, the 4th capacitor of frequency-selecting and positive feedback network.
2. high-temperature high-pressure controlled oscillator according to claim 1, is characterized in that: described the first semiconductor field effect transistor is SiC semiconductor field.
3. high-temperature high-pressure controlled oscillator according to claim 1, is characterized in that: described the 5th capacitor substitutes with GaN LED.
4. high-temperature high-pressure controlled oscillator according to claim 1, is characterized in that: described high-temperature high-pressure controlled oscillator adopts LTCC technique to make circuit board.
5. high-temperature high-pressure controlled oscillator according to claim 1, it is characterized in that: also comprise source class follower, this source class follower comprises the second semiconductor field effect transistor and the second resistance, the drain electrode of the second semiconductor field effect transistor connects the drain electrode of the first semiconductor field effect transistor, the grid of the second semiconductor field effect transistor is connected to the source class of the first semiconductor field effect transistor, the source class of the second semiconductor field effect transistor connects one end of the second resistance, and the other end of the second resistance connects the other end of the first resistance.
6. high-temperature high-pressure controlled oscillator according to claim 1 or 5, it is characterized in that: also comprise biasing circuit, this circuit comprises the 3rd resistance and the 4th resistance, one end of the 3rd resistance is connected between the drain electrode and DC power anode of the first semiconductor field effect transistor, the other end of the 3rd resistance connects one end of the 4th resistance, the other end of the 3rd resistance is connected between the second electric capacity and the first electric capacity, be connected with one end of the 4th resistance, the other end of the 4th resistance is connected between the 4th electric capacity and inductance again.
7. high-temperature high-pressure controlled oscillator according to claim 5, is characterized in that: described the second semiconductor field effect transistor is SiC semiconductor field.
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877640A (en) * | 2016-12-23 | 2017-06-20 | 杨杰 | A kind of high-voltage starting circuit |
| CN109274368A (en) * | 2018-11-14 | 2019-01-25 | 电子科技大学 | A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator |
| CN114047796A (en) * | 2022-01-12 | 2022-02-15 | 北京晨晶精仪电子有限公司 | Temperature control circuit, constant temperature crystal oscillator circuit and constant temperature crystal oscillator |
| CN115567017A (en) * | 2021-07-02 | 2023-01-03 | 苏州华太电子技术股份有限公司 | Radio frequency circuit based on high-voltage nonlinear power element |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030034852A1 (en) * | 2001-07-31 | 2003-02-20 | Yoshihiro Kobayashi | Oscillation circuit and electronics using the same |
| CN102299706A (en) * | 2010-06-28 | 2011-12-28 | 开曼晨星半导体公司 | VCO frequency temperature compensation system for PLLS |
-
2013
- 2013-12-11 CN CN201310675486.4A patent/CN103647507A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030034852A1 (en) * | 2001-07-31 | 2003-02-20 | Yoshihiro Kobayashi | Oscillation circuit and electronics using the same |
| CN102299706A (en) * | 2010-06-28 | 2011-12-28 | 开曼晨星半导体公司 | VCO frequency temperature compensation system for PLLS |
Non-Patent Citations (1)
| Title |
|---|
| JIE YANG: "A High Temperature VCO for Extreme Environment Wireless Applications", 《IEEE INTERNATIONAL CONFERENCE ON WIRELESS FOR SPACE AND EXTREME ENVIRONMENTS》 * |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106877640A (en) * | 2016-12-23 | 2017-06-20 | 杨杰 | A kind of high-voltage starting circuit |
| CN106877640B (en) * | 2016-12-23 | 2024-02-02 | 杨杰 | High-voltage starting circuit |
| CN109274368A (en) * | 2018-11-14 | 2019-01-25 | 电子科技大学 | A kind of broad tuning Low phase noise micro-strip voltage controlled oscillator |
| CN115567017A (en) * | 2021-07-02 | 2023-01-03 | 苏州华太电子技术股份有限公司 | Radio frequency circuit based on high-voltage nonlinear power element |
| CN114047796A (en) * | 2022-01-12 | 2022-02-15 | 北京晨晶精仪电子有限公司 | Temperature control circuit, constant temperature crystal oscillator circuit and constant temperature crystal oscillator |
| CN114047796B (en) * | 2022-01-12 | 2022-04-05 | 北京晨晶精仪电子有限公司 | Temperature control circuit, constant temperature crystal oscillator circuit and constant temperature crystal oscillator |
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