CN115567017A - Radio frequency circuit based on high-voltage nonlinear power element - Google Patents
Radio frequency circuit based on high-voltage nonlinear power element Download PDFInfo
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- CN115567017A CN115567017A CN202110748650.4A CN202110748650A CN115567017A CN 115567017 A CN115567017 A CN 115567017A CN 202110748650 A CN202110748650 A CN 202110748650A CN 115567017 A CN115567017 A CN 115567017A
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- 230000003321 amplification Effects 0.000 claims abstract description 25
- 238000003199 nucleic acid amplification method Methods 0.000 claims abstract description 25
- 230000003068 static effect Effects 0.000 claims abstract description 18
- 230000008878 coupling Effects 0.000 claims abstract description 15
- 238000010168 coupling process Methods 0.000 claims abstract description 15
- 238000005859 coupling reaction Methods 0.000 claims abstract description 15
- 239000003990 capacitor Substances 0.000 claims description 113
- 239000003985 ceramic capacitor Substances 0.000 claims description 9
- 229910000859 α-Fe Inorganic materials 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 53
- 229910010271 silicon carbide Inorganic materials 0.000 description 53
- 230000009286 beneficial effect Effects 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 230000005669 field effect Effects 0.000 description 3
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000007792 addition Methods 0.000 description 1
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- 210000003127 knee Anatomy 0.000 description 1
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
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Abstract
The invention discloses a radio frequency circuit based on a high-voltage nonlinear power element, which comprises a nonlinear power element, and a static bias part and a dynamic coupling amplification part which are connected with the nonlinear power element, wherein the nonlinear power element comprises a SiC junction transistor, the static bias part provides an optimal static working point for the SiC junction transistor, and the dynamic coupling amplification circuit transmits a radio frequency signal to be amplified to the SiC junction transistor, and the radio frequency signal is amplified by the SiC junction transistor and then subjected to gain amplification and output. According to the invention, the SiC JFET is used as a core nonlinear power amplification element, a high-voltage radio frequency circuit is built, the working frequency range and the voltage level of the circuit are improved, and the high-voltage application of the radio frequency circuit is facilitated.
Description
Technical Field
The invention belongs to the technical field of radio frequency circuits, and particularly relates to a radio frequency circuit based on a high-voltage nonlinear power element.
Background
The radio frequency amplifying device and the radio frequency amplifying circuit are widely applied to radio systems of communication, navigation, identification, measurement and control, broadcast television, remote sensing and remote measuring, radio astronomy, electronic countermeasure and other applications, and indexes such as noise, gain, power density, power additional efficiency and the like of the radio frequency amplifying device or the radio frequency amplifying circuit are more critical in the applications; in the fields of microwave and millimeter wave radar, communication and the like, power adding efficiency of related equipment to an amplifying device and a circuit is strictly required, in the aspect of research on high-efficiency devices and circuits, a radio frequency circuit designer usually starts from the aspects of a device matching mode, a circuit topological structure and the like, and a device and process researcher usually starts from the aspects of reducing parasitic resistance and parasitic capacitance of a device, reducing knee voltage, improving breakdown voltage and the like.
At present, a silicon (Si) -based power device is mostly used as a core of a high voltage rf circuit, such as a Si VDMOSFET (Vertical Diffused Metal-Oxide-Semiconductor Field-Effect Transistor). In a conventional circuit, a Si VDMOSFET is used as a nonlinear amplification element of a high-voltage radio frequency circuit, and a small signal input to a gate of the VDMOSFET is gain-amplified and output from a drain of the VDMOSFET. Since the frequency characteristics of the power semiconductor device are closely related to the carrier mobility of the semiconductor material, the high carrier mobility is beneficial to improving the frequency boundary of the power device. The operating frequency of the rf circuit based on the Si VDMOSFET is limited due to the limitation of the mobility of the Si material carriers.
How to provide a radio frequency circuit with improved frequency performance is an urgent problem to be solved.
Disclosure of Invention
The invention mainly aims to provide a radio frequency circuit based on a high-voltage nonlinear power element, so that the defects of frequency boundary and voltage grade limitation of the conventional high-voltage radio frequency circuit are overcome.
In order to achieve the purpose, the technical scheme adopted by the invention comprises the following steps: a radio frequency circuit based on a high-voltage nonlinear power element comprises a nonlinear power element, and a static bias part and a dynamic coupling amplification part which are connected with the nonlinear power element, wherein the nonlinear power element comprises a SiC junction transistor, the static bias part provides an optimal static working point for the SiC junction transistor, and the dynamic coupling amplification circuit transmits a radio frequency signal to be amplified to the SiC junction transistor, and the radio frequency signal is amplified by the SiC junction transistor and then is subjected to gain amplification and output.
In a preferred embodiment, the static bias part comprises a gate bias circuit and a drain bias circuit, wherein the gate bias circuit is connected with the gate of the SiC junction transistor and is used for providing gate bias voltage for the SiC junction transistor; and the drain electrode bias circuit is connected with the drain electrode of the SiC junction transistor and is used for providing drain electrode bias voltage for the SiC junction transistor.
In a preferred embodiment, the gate bias circuit includes a first resistor, a second resistor, a third resistor, and a sixth capacitor, one end of the sixth capacitor is connected to one end of the first resistor and is connected to the gate bias voltage, the other end of the sixth capacitor is grounded, the other end of the first resistor is connected to one end of the second resistor and one end of the third resistor, the other end of the third resistor is grounded, and the other end of the second resistor is connected to the gate of the SiC junction transistor.
In a preferred embodiment, the first resistor, the second resistor and the third resistor are power resistors, the sixth capacitor is a ceramic capacitor, and the gate bias voltage is-12V to 0V.
In a preferred embodiment, the drain bias circuit includes a third inductor, a fourth inductor, a seventh capacitor, and an eighth capacitor, one end of the eighth capacitor is connected to one end of the fourth inductor and is connected to a drain bias voltage, the other end of the eighth capacitor is grounded, the other end of the fourth inductor is connected to one end of the seventh capacitor and one end of the third inductor, the other end of the seventh capacitor is grounded, and the other end of the third inductor is connected to the drain of the SiC junction transistor.
In a preferred embodiment, the fourth inductor is a ferrite inductor, the seventh capacitor and the eighth capacitor are ceramic capacitors, and the drain bias voltage is higher than 150V.
In a preferred embodiment, the dynamic coupling amplifying part comprises a radio frequency input circuit and a radio frequency output circuit, wherein the radio frequency input circuit is connected with the gate of the SiC junction transistor and is used for transmitting the radio frequency signal to be amplified to the gate of the SiC junction transistor; and the radio frequency output circuit is connected with the drain electrode of the SiC junction transistor and is used for performing gain amplification on the radio frequency signal amplified by the SiC junction transistor and outputting the radio frequency signal.
In a preferred embodiment, the radio frequency input circuit includes a first capacitor, a second capacitor, a third capacitor and a first inductor, one end of the second capacitor is connected to a radio frequency signal to be amplified, the other end of the second capacitor is connected to one end of the third capacitor and one end of the first inductor, the other end of the third capacitor is grounded, the other end of the first inductor is connected to one end of the first capacitor and both connected to a gate of the SiC junction transistor, and the other end of the first capacitor is grounded.
In a preferred embodiment, the first capacitor is a rated ceramic capacitor, and the second capacitor and the third capacitor are adjustable capacitors.
In a preferred embodiment, the radio frequency output circuit includes a second inductor, a fourth capacitor, a fifth capacitor and a ninth capacitor, one end of the second inductor is connected to the drain of the SiC junction transistor, the other end of the second inductor is connected to one end of the ninth capacitor, the other end of the ninth capacitor is connected to both one end of the fourth capacitor and one end of the fifth capacitor, the other end of the fourth capacitor is grounded, and the other end of the fifth capacitor outputs the amplified radio frequency signal.
In a preferred embodiment, the fourth capacitor and the fifth capacitor are adjustable capacitors, and the ninth capacitor is a COG capacitor.
Compared with the prior art, the invention has the beneficial effects that: the invention relates to a high-voltage radio frequency circuit based on a SiC (Silicon Carbide) JFET (Junction Field-Effect Transistor), wherein the SiC JFET is used as a core nonlinear power element of the radio frequency circuit to build a high-voltage radio frequency application circuit. The application target of small signal gain amplification is realized. On one hand, the SiC JFET high carrier mobility characteristic can expand the frequency boundary of the existing radio frequency application circuit and improve the working frequency range of the circuit; on the other hand, the SiC JFET is easy to realize high-voltage power preparation, and the improvement of the voltage level of the power device is beneficial to the high-voltage application of a radio frequency circuit.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments described in the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
Fig. 1 is a schematic structural diagram of an rf circuit according to an embodiment of the invention.
Detailed Description
The present invention will be more fully understood from the following detailed description, which should be read in conjunction with the accompanying drawings. Detailed embodiments of the present invention are disclosed herein; however, it is to be understood that the disclosed embodiments are merely exemplary of the invention, which can be embodied in various forms. Therefore, specific functional details disclosed herein are not to be interpreted as limiting, but merely as a basis for the claims and as a representative basis for teaching one skilled in the art to variously employ the present invention in virtually any appropriately detailed embodiment.
According to the radio frequency circuit based on the high-voltage nonlinear power element, the SiC JFET is used as a core nonlinear power amplification element, the high-voltage radio frequency circuit is built, the working frequency range and the voltage level of the circuit are improved, and the high-voltage application of the radio frequency circuit is facilitated. The SiC JFET is a third-generation wide-forbidden semiconductor device, the frequency characteristic of the device can be effectively improved due to high carrier mobility, and the voltage level of the power device is easily improved due to high critical breakdown field intensity. Therefore, due to the performance advantages of the SiC JFET device, the high-voltage radio frequency application circuit based on the SiC JFET has excellent circuit performance.
Referring to fig. 1, a radio frequency circuit based on a high-voltage nonlinear power element disclosed in the embodiment of the present invention includes a SiC junction transistor (SiC JFET) M1, and a static bias portion and a dynamic coupling amplification portion connected to the SiC junction transistor M1, where the static bias portion provides an optimal static operating point for the SiC junction transistor M1, and the dynamic coupling amplification circuit transmits a radio frequency signal to be amplified to the SiC junction transistor M1, and performs gain amplification output after amplification by the SiC junction transistor M1, that is, a coupling amplification output function of the radio frequency signal to be amplified is achieved.
In this embodiment, the static bias part specifically includes a gate bias circuit and a drain bias circuit, where the gate bias circuit is connected to the gate G of the SiC junction transistor M1 and is configured to provide a gate bias voltage to the SiC junction transistor M1; the drain bias circuit is connected with the drain D of the SiC junction transistor M1 and is used for providing drain bias voltage for the SiC junction transistor M1.
In this embodiment, the gate bias circuit specifically includes a first resistor R1, a second resistor R2, a third resistor R3, and a sixth capacitor C6, wherein one end of the sixth capacitor C6 is connected to one end of the first resistor R1 and is connected to the gate bias voltage, the other end of the sixth capacitor C6 is grounded, the other end of the first resistor R1 is connected to one end of the second resistor R2 and one end of the third resistor R3, the other end of the third resistor R3 is grounded, and the other end of the second resistor R2 is connected to the gate G of the SiC junction transistor M1 through a T-shaped line TL 1. In this embodiment, the first resistor R1, the second resistor R2, and the third resistor R3 are power resistors, and the resistance values are all 0.5 Ω. The sixth capacitor C6 is a 500V high-voltage ceramic capacitor with a specification of 0.1 muf, the gate bias voltage is-12V to 0v, and the resistance value of the t-shaped line TL1 is 34 omega. Of course, there are completely different parameter selection rules for different resonant frequencies, i.e. the respective resistances, capacitances, etc. are not limited to the values defined in this embodiment.
In this embodiment, the drain bias circuit specifically includes a third inductor L3, a fourth inductor L4, a seventh capacitor C7, and an eighth capacitor C8, where one end of the eighth capacitor C8 is connected to one end of the fourth inductor L4 and both connected to a drain bias voltage, the other end of the eighth capacitor C8 is grounded, the other end of the fourth inductor L4 is connected to one end of the seventh capacitor C7 and one end of the third inductor L3, the other end of the seventh capacitor C7 is grounded, and the other end of the third inductor L3 is connected to the drain D of the SiC junction transistor M1. In this embodiment, the third inductor L3 is a high frequency inductor with AWG standard and an inductance of 500nH, the fourth inductor L4 is a ferrite inductor with an inductance of 3 μ H, the seventh capacitor C7 and the eighth capacitor C8 are ceramic capacitors with 0.1 μ F standard and 500V standard, and the drain bias voltage is higher than 150V.
In this embodiment, the dynamic coupling amplifying section specifically includes a radio frequency input circuit and a radio frequency output circuit, where the radio frequency input circuit is connected to the gate G of the SiC junction transistor M1, and is configured to transmit a radio frequency signal to be amplified to the gate G of the SiC junction transistor M1; and the radio frequency output circuit is connected with the drain electrode D of the SiC junction transistor M1 and is used for performing gain amplification on the radio frequency signal amplified by the SiC junction transistor M1 and outputting the radio frequency signal.
In this embodiment, the radio frequency input circuit specifically includes a first capacitor C1, a second capacitor C2, a third capacitor C3, and a first inductor L1, one end of the second capacitor C2 is connected to a radio frequency signal to be amplified, the other end of the second capacitor C2 is connected to one end of the third capacitor C3 and one end of the first inductor L1, the other end of the third capacitor C3 is grounded, the other end of the first inductor L1 is connected to one end of the first capacitor C1 and is connected to the gate G of the SiC junction transistor M1 through the T-shaped wire TL1, and the other end of the first capacitor C1 is grounded. In this embodiment, the first capacitor C1 is a rated ceramic capacitor, specifically a 2000pF capacitor ATC 700B of the ATC company 700B series. The second capacitor C2 and the third capacitor C3 are adjustable capacitors, and are specifically ceramic potentiometers (Mica trimmers) of Arco corporation 465 type. The first inductor L1 is a high frequency inductor with AWG specification and inductance of 176 nH.
In this embodiment, the radio frequency output circuit specifically includes a second inductor L2, a fourth capacitor C4, a fifth capacitor C5, and a ninth capacitor C9, where one end of the second inductor L2 is connected to the drain D of the SiC junction transistor M1, the other end is connected to one end of the ninth capacitor C9, the other end of the ninth capacitor C9 is connected to one end of the fourth capacitor C4 and one end of the fifth capacitor C5, the other end of the fourth capacitor C4 is grounded, and the other end of the fifth capacitor C5 outputs the amplified radio frequency signal. In this embodiment, the second inductor L2 is a high-frequency inductor with AWG size and an inductance value of 87nH, the fourth capacitor C4 and the fifth capacitor C5 are adjustable capacitors, specifically Arco 465Mica trimmers, the ninth capacitor C9 is a high-frequency patch (COG) capacitor, specifically 3X 2200pf,500v.
The working principle of the embodiment of the invention is as follows: firstly, the drain electrode bias circuit provides a high-power drain electrode bias voltage for the SiC JFET, so that the radio frequency circuit has high output power capability; and secondly, the grid bias circuit provides grid bias voltage for the SiC JFET, and the static bias part enables the channel of the SiC JFET to be in the optimal opening state, so that the circuit can realize the distortion-free amplification function of a target signal. Furthermore, the radio frequency input circuit of the dynamic coupling amplifying part transmits the radio frequency signal to be amplified to the grid electrode of the SiC JFET; and finally, after the radio frequency signal to be amplified is amplified by the SiC JFET, gain amplification output is carried out through the radio frequency output circuit.
It should be noted that the structure of the static bias part and the dynamic coupling amplifying part is not limited to the above description. The static bias portion and the dynamic coupling amplification portion described above are preferred embodiments of the present invention.
The invention relates to a high-voltage radio frequency circuit based on a SiC (Silicon Carbide) JFET (Junction Field-Effect Transistor), wherein the SiC JFET is used as a core nonlinear power element of the radio frequency circuit to build a high-voltage radio frequency application circuit. The application target of small signal gain amplification is realized. On one hand, the SiC JFET high carrier mobility characteristic can expand the frequency boundary of the existing radio frequency application circuit and improve the working frequency range of the circuit; on the other hand, the SiC JFET is easy to realize high-voltage power preparation, and the improvement of the voltage level of the power device is beneficial to the high-voltage application of a radio frequency circuit.
While the invention has been described with reference to illustrative embodiments, it will be understood by those skilled in the art that various other changes, omissions and/or additions may be made and substantial equivalents may be substituted for elements thereof without departing from the spirit and scope of the invention. In addition, many modifications may be made to adapt a particular situation or material to the teachings of the invention without departing from its scope. Therefore, it is intended that the invention not be limited to the particular embodiment disclosed for carrying out this invention, but that the invention will include all embodiments falling within the scope of the appended claims.
Claims (10)
1. A radio frequency circuit based on a high-voltage nonlinear power element is characterized in that: the radio frequency circuit comprises a nonlinear power element, and a static bias part and a dynamic coupling amplification part which are connected with the nonlinear power element, wherein the nonlinear power element comprises an SiC junction transistor, the static bias part provides an optimal static working point for the SiC junction transistor, and the dynamic coupling amplification circuit transmits a radio frequency signal to be amplified to the SiC junction transistor, and the radio frequency signal is amplified by the SiC junction transistor and then subjected to gain amplification output.
2. The radio frequency circuit based on the high-voltage nonlinear power element as claimed in claim 1, wherein: the static bias part comprises a grid bias circuit and a drain bias circuit, wherein the grid bias circuit is connected with the grid of the SiC junction transistor and is used for providing grid bias voltage for the SiC junction transistor; and the drain electrode bias circuit is connected with the drain electrode of the SiC junction transistor and is used for providing drain electrode bias voltage for the SiC junction transistor.
3. The radio frequency circuit based on the high-voltage nonlinear power element as claimed in claim 2, wherein: the grid bias circuit comprises a first resistor, a second resistor, a third resistor and a sixth capacitor, one end of the sixth capacitor is connected with one end of the first resistor and is connected with grid bias voltage, the other end of the sixth capacitor is grounded, the other end of the first resistor is connected with one end of the second resistor and one end of the third resistor, the other end of the third resistor is grounded, and the other end of the second resistor is connected with the grid of the SiC junction transistor.
4. The radio frequency circuit based on the high-voltage nonlinear power element as claimed in claim 3, wherein: the first resistor, the second resistor and the third resistor are power resistors, the sixth capacitor is a ceramic capacitor, and the grid bias voltage is-12V-0V.
5. The radio frequency circuit based on the high-voltage nonlinear power element as claimed in claim 2, wherein: the drain electrode biasing circuit comprises a third inductor, a fourth inductor, a seventh capacitor and an eighth capacitor, one end of the eighth capacitor is connected with one end of the fourth inductor and is connected with drain electrode biasing voltage, the other end of the eighth capacitor is grounded, the other end of the fourth inductor is connected with one end of the seventh capacitor and one end of the third inductor, the other end of the seventh capacitor is grounded, and the other end of the third inductor is connected with the drain electrode of the SiC junction transistor.
6. The radio frequency circuit based on the high-voltage nonlinear power element as claimed in claim 5, wherein: the fourth inductor is a ferrite inductor, the seventh capacitor and the eighth capacitor are ceramic capacitors, and the drain bias voltage is higher than 150V.
7. The radio frequency circuit based on the high-voltage nonlinear power element as claimed in claim 1, wherein: the dynamic coupling amplifying part comprises a radio frequency input circuit and a radio frequency output circuit, wherein the radio frequency input circuit is connected with the grid electrode of the SiC junction transistor and is used for transmitting the radio frequency signal to be amplified to the grid electrode of the SiC junction transistor; and the radio frequency output circuit is connected with the drain electrode of the SiC junction transistor and is used for performing gain amplification on the radio frequency signal amplified by the SiC junction transistor and outputting the radio frequency signal.
8. The radio frequency circuit based on the high-voltage nonlinear power element as claimed in claim 7, wherein: the radio frequency input circuit comprises a first capacitor, a second capacitor, a third capacitor and a first inductor, wherein one end of the second capacitor is connected to a radio frequency signal to be amplified, the other end of the second capacitor is connected with one end of the third capacitor and one end of the first inductor, the other end of the third capacitor is grounded, the other end of the first inductor is connected with one end of the first capacitor and is connected to a grid electrode of the SiC junction transistor, and the other end of the first capacitor is grounded.
9. The rf circuit according to claim 8, wherein: the first capacitor is a rated ceramic capacitor, and the second capacitor and the third capacitor are adjustable capacitors.
10. The radio frequency circuit based on the high-voltage nonlinear power element as claimed in claim 7, wherein: the radio frequency output circuit comprises a second inductor, a fourth capacitor, a fifth capacitor and a ninth capacitor, one end of the second inductor is connected with a drain electrode of the SiC junction transistor, the other end of the second inductor is connected with one end of the ninth capacitor, the other end of the ninth capacitor is connected with one end of the fourth capacitor and one end of the fifth capacitor, the other end of the fourth capacitor is grounded, and the other end of the fifth capacitor outputs amplified radio frequency signals.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110748650.4A CN115567017A (en) | 2021-07-02 | 2021-07-02 | Radio frequency circuit based on high-voltage nonlinear power element |
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| CN202110748650.4A CN115567017A (en) | 2021-07-02 | 2021-07-02 | Radio frequency circuit based on high-voltage nonlinear power element |
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Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103647507A (en) * | 2013-12-11 | 2014-03-19 | 东北大学 | High-temperature voltage controlled oscillator |
| CN205320041U (en) * | 2016-01-18 | 2016-06-15 | 西安科技大学 | 2G is to 4G broadband fixed gain amplifier module |
| CN106877826A (en) * | 2015-12-10 | 2017-06-20 | 美国亚德诺半导体公司 | The power intensifier and method of the automatic biasing distributed amplifier of gate bias network |
| CN107370468A (en) * | 2017-07-23 | 2017-11-21 | 成都斯普奥汀科技有限公司 | A kind of power amplifier source for magnetic resonance coupling wireless power transmission |
| CN107733380A (en) * | 2017-10-19 | 2018-02-23 | 湖南格兰德芯微电子有限公司 | The radio-frequency power amplifier of biasing circuit and its composition |
| CN109039290A (en) * | 2018-07-05 | 2018-12-18 | 电子科技大学 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
| CN112583357A (en) * | 2020-12-07 | 2021-03-30 | 辽宁工程技术大学 | High-efficiency high-power E-type radio frequency power amplifier |
| CN213125981U (en) * | 2020-09-14 | 2021-05-04 | 浙江金洲电子科技有限公司 | Harmonic control-based F-type power amplifier, wireless transmitting terminal and system |
| CN112910418A (en) * | 2021-01-15 | 2021-06-04 | 电子科技大学 | Ultra-wideband chip biasing circuit structure |
-
2021
- 2021-07-02 CN CN202110748650.4A patent/CN115567017A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103647507A (en) * | 2013-12-11 | 2014-03-19 | 东北大学 | High-temperature voltage controlled oscillator |
| CN106877826A (en) * | 2015-12-10 | 2017-06-20 | 美国亚德诺半导体公司 | The power intensifier and method of the automatic biasing distributed amplifier of gate bias network |
| CN205320041U (en) * | 2016-01-18 | 2016-06-15 | 西安科技大学 | 2G is to 4G broadband fixed gain amplifier module |
| CN107370468A (en) * | 2017-07-23 | 2017-11-21 | 成都斯普奥汀科技有限公司 | A kind of power amplifier source for magnetic resonance coupling wireless power transmission |
| CN107733380A (en) * | 2017-10-19 | 2018-02-23 | 湖南格兰德芯微电子有限公司 | The radio-frequency power amplifier of biasing circuit and its composition |
| CN109039290A (en) * | 2018-07-05 | 2018-12-18 | 电子科技大学 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
| CN213125981U (en) * | 2020-09-14 | 2021-05-04 | 浙江金洲电子科技有限公司 | Harmonic control-based F-type power amplifier, wireless transmitting terminal and system |
| CN112583357A (en) * | 2020-12-07 | 2021-03-30 | 辽宁工程技术大学 | High-efficiency high-power E-type radio frequency power amplifier |
| CN112910418A (en) * | 2021-01-15 | 2021-06-04 | 电子科技大学 | Ultra-wideband chip biasing circuit structure |
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