CN109039290A - The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium - Google Patents
The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium Download PDFInfo
- Publication number
- CN109039290A CN109039290A CN201810730106.5A CN201810730106A CN109039290A CN 109039290 A CN109039290 A CN 109039290A CN 201810730106 A CN201810730106 A CN 201810730106A CN 109039290 A CN109039290 A CN 109039290A
- Authority
- CN
- China
- Prior art keywords
- power
- inductance
- amplifier
- medium
- capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The invention discloses the lamped element power synthesis amplifiers that suspended substrate stripline is integrated based on medium, power synthesis amplifier is the road N power synthesis amplifier, the every of the road N power amplifier is a M stage power amplifier all the way, and power divider/synthesizer is the road N power divider/synthesizer；The input and output matching circuit of M stage power amplifier is all made of the bandpass filtering type matching network being made of several broken line inductance and the double-deck interdigital capacitor, while reducing circuit size, signal is screened, M stage power amplifier is made to have preferable gain flatness；Power divider/synthesizer uses the low-pass filtering type match circuit being made of several double-layer spiral inductance and the double-deck interdigital capacitor, and using the feeder line of the double-deck interconnection, the use of double-layer spiral inductance and the double-deck feeder line reduces conductor losses；Lamped element power synthesis amplifier solves that current power synthesis combining amplifier loss is big, and volume is big, heavy, and the problem of need additional metal shielding case.
Description
Technical field
The present invention relates to radio frequency microwave circuit fields, and in particular, to a kind of lump member that suspended substrate stripline is integrated based on medium
Part power synthesis amplifier.
Background technique
Power amplifier directly determines transmitting-receiving as the critical component in telecommunication system transceiver, output power size
Distance, anti-interference ability and the signal transmission quality of machine effect.With the fast development of Modern wireless communication technology, how to improve
" power of power amplifier " becomes problem to be solved instantly.
In the prior art, the output power of power amplifier is improved, there are mainly two types of modes, and one is by improving base
It is realized in the power output of semiconductor technology or the single power device of vacuum microelectronics technique；Another kind is closed by power
The output power in-phase stacking of multiple solid state power devices is obtained to higher-wattage output at technology.Current single solid state power
Device mainly exists in the form of MMIC, is influenced by factors such as semiconducter process, the output of single MMIC device
Power is smaller, and working efficiency is lower, and obtaining the relatively effective method of high-power output is still the second way, i.e., power closes
At technology.Existing power synthesis circuit, the conventional power for being mainly based upon conventional transmission line such as microstrip line, strip line etc. are closed
At circuit, there are the defects such as loss is big, combined coefficient is low, and needs in addition to process metal shell as shielding box, volume is heavy,
And increase extra cost.
Summary of the invention
The present invention provides a kind of lamped element power synthesis amplifiers that suspended substrate stripline is integrated based on medium, solve current function
The problem of loss of rate combining amplifier is big, volume is big and needs additional metal shield shell.
The invention is realized by the following technical scheme:
This application provides a kind of lamped element power synthesis amplifier for integrating suspended substrate stripline based on medium, the power is closed
It is the road N power synthesis amplifier at amplifier, N is the positive integer more than or equal to 2, and the every of the road N power amplifier is a M all the way
Stage power amplifier, M are the positive integer more than or equal to 1, and power divider/synthesizer is the road N power divider/synthesizer.
Particularly, each stage power amplifier of the M stage power amplifier is all made of by several series inductances, series connection
Capacitor is parallel to the inductance on ground and is parallel to the bandpass filtering type pair net that the capacitor on ground is constituted according to working frequency combination
Network, using the gate bias circuit being made of the big resistance of 1 series connection and 1 patch capacitor for being parallel to ground, using by 1 spiral
The drain electrode biasing circuit that inductance and 1 patch capacitor for being parallel to ground form.
Each stage power amplifier of M stage power amplifier includes:
Bandpass filtering type input matching network, field effect transistor, gate bias circuit, drain electrode biasing circuit, input
Capacitance C3, output capacitance C4, bandpass filtering type output matching network；
Power amplifier input is connect with one end of bandpass filtering type input matching network, the input of bandpass filtering type
The other end of matching network is connect with one end of input capacitance C3, inputs the other end and gate bias electricity of capacitance C3
The grid of Lu Junyu field effect transistor connects, and field effect transistor source electrode ground connection, field effect transistor drain electrode is biased with drain electrode
One end of circuit and output capacitance C4 are all connected with, and the other end for exporting capacitance C4 is matched with the output of bandpass filtering type
One end of network connects, and the other end of bandpass filtering type output matching network is connect with output end.
Particularly, bandpass filtering type input matching network includes: capacitor C1, capacitor C2, inductance L1-L4；Capacitor C1's
One end and one end of inductance L1 are connect with input terminal, the other end ground connection of capacitor C1；The other end of inductance L1 is with inductance L2's
One end and one end of inductance L3 are all connected with, and the other end ground connection of inductance L2, the other end of inductance L3 is connect with one end of capacitor C2,
The other end of capacitor C2 is all connected with one end of input capacitance C3 and one end of inductance L4, the other end ground connection of inductance L4；
Gate bias circuit includes: resistance R, shunt capacitance CBypass；One end of resistance R and direct grid current supply electricity to inbound port
And shunt capacitance CBypassOne end be all connected with, shunt capacitance CBypassOther end ground connection, the other end of resistance R and field-effect
The grid of transistor connects；
The biasing circuit that drains includes: spiral inductance LRF Choke, shunt capacitance CBypass；Spiral inductance LRF ChokeOne end with
Direct current drain to inbound port and shunt capacitance CBypassOne end be all connected with, shunt capacitance CBypassThe other end ground connection, spiral shell
Revolve inductance LRF ChokeThe other end and field effect transistor drain electrode connect；
Bandpass filtering type output matching network includes: capacitor C5 and C6, inductance L5-L8；One end of capacitor C5 and inductance
One end of L5 and one end of output capacitance C4 are all connected with, the other end ground connection of inductance L5, the other end and inductance of capacitor C5
One end of L6 connects, and the other end of inductance L6 and one end of one end of inductance L7 and inductance L8 are all connected with, the other end of inductance L7
Ground connection, the other end of inductance L8 and one end of capacitor C6 are connect with output end, the other end ground connection of capacitor C6.Particularly, institute
The road the N power combing/distributor stated, per be all made of all the way by it is several be parallel to ground interdigital capacitors and series inductance form it is low
2 tunnels of pass filter type matching network, arbitrary neighborhood are isolated using 1 resistance, and the feeder line of power divider/synthesizer is adopted
Use double-layer structure.
Particularly, the interdigital capacitor of the composition matching network, which is characterized in that use double-layer structure, interdigital terminal
Double layer of metal pass through metal throuth hole interconnect.
Particularly, the spiral inductance of the composition matching network, which is characterized in that use double-layer structure, upper layer and lower layer
Metal is interconnected by metal throuth hole.
Particularly, the medium integrates suspended substrate stripline lamped element power synthesis amplifier, further includes the integrated suspension of medium
Line platform, it includes 5 layers of double-sided printed-circuit board laminated from top to bottom, the 3rd layer circuit board that the medium, which integrates suspended substrate stripline platform,
Upper and lower surfaces design has the power synthesis amplifier circuit based on lamped element, and the 2nd layer and the 4th layer circuit board are distinguished hollow out, protected
Demonstrate,prove the 1st layer and the 3rd layer circuit board, the 3rd layer form cavity structure between the 5th layer circuit board.
Particularly, the intermediate medium of described the 1st layer, the 2nd layer, the 4th layer and the 5th layer circuit board uses Fr4, the 3rd layer of electricity
The intermediate medium of road plate uses Rogers5880.
Compared with prior art, the present invention having the following advantages and benefits:
The lamped element power synthesis amplifier of the present invention that suspended substrate stripline is integrated based on medium, power amplifier section are adopted
With the bandpass filtering type match circuit being made of broken line inductance and the double-deck interdigital capacitor, useful letter can be preferably filtered out
Number, and guarantee higher gain flatness；Power divider/synthesizer part is used by double-layer spiral inductance and the double-deck interdigital capacitor
The low-pass filtering type match circuit of composition, and feeder line is using the double-deck interconnection cabling.The double-deck interdigital capacitor is compared with traditional plate
Capacitor and single layer interdigital capacitor occupy smaller circuit area under same capacitance demand；Double-layer spiral inductance and the double-deck feedback
Line is increased metal layer thickness indirectly, is reduced conductor losses using interconnection cabling.Medium integrates the medium hollow out of suspended substrate stripline
Characteristic, so that integrating the road N M stage power amplifier, the power divider in the road the N power synthesis amplifier of suspended substrate stripline based on medium
And power combiner is closed off in N+2 different cavitys, and independent electromagnetic shielding is formd.Medium integrates suspended substrate stripline
From encapsulation characteristic so that not needing additional processing metal shielding based on the power synthesis amplifier that medium integrates suspended substrate stripline
Body, it is light-weight and at low cost.To sum up, it is described based on medium integrate suspended substrate stripline power synthesis amplifier have low-loss,
High Gain Flatness PA, it is small in size, from encapsulate the advantages of.
Detailed description of the invention
Attached drawing described herein is used to provide to further understand the embodiment of the present invention, constitutes one of the application
Point, do not constitute the restriction to the embodiment of the present invention；
Fig. 1 is the lamped element power synthesis amplifier that suspended substrate stripline is integrated based on medium that the embodiment of the present invention 1 provides
Constitute block diagram；
Fig. 2 is that the medium that the embodiment of the present invention 1 provides integrates in the power synthesis amplifier of suspended substrate stripline M grades (M is 1 herein)
Power amplifier schematic diagram；
Fig. 3 is the road N (N is 2 herein) power combing amplification that suspended substrate stripline is integrated based on medium that the embodiment of the present invention 1 provides
The schematic diagram of power divider/synthesizer in device；
Fig. 4 is the lamped element power synthesis amplifier that suspended substrate stripline is integrated based on medium that the embodiment of the present invention 1 provides
Section view；
Fig. 5 is the lamped element power synthesis amplifier that suspended substrate stripline is integrated based on medium that the embodiment of the present invention 1 provides
3 dimensional drawing；
Fig. 6 is the lamped element power synthesis amplifier that suspended substrate stripline is integrated based on medium that the embodiment of the present invention 1 provides
The top view of 3rd layer of dielectric-slab；
Fig. 7 is the lamped element power synthesis amplifier that suspended substrate stripline is integrated based on medium that the embodiment of the present invention 1 provides
Return loss and small-signal gain simulation curve figure；
Fig. 8 is the lamped element power synthesis amplifier that suspended substrate stripline is integrated based on medium that the embodiment of the present invention 1 provides
Gain, power added efficiency and 1dB compression point power graph.
Specific embodiment
To better understand the objects, features and advantages of the present invention, with reference to the accompanying drawing and specific real
Applying mode, the present invention is further described in detail.It should be noted that in the case where not conflicting mutually, the application's
Feature in embodiment and embodiment can be combined with each other.
In the following description, numerous specific details are set forth in order to facilitate a full understanding of the present invention, still, the present invention may be used also
Implemented with being different from the other modes being described herein in range using other, therefore, protection scope of the present invention is not by under
The limitation of specific embodiment disclosed in face.
Embodiment 1
This example discloses a kind of 2 road power synthesis amplifier of lamped element that suspended substrate stripline is integrated based on medium, such as Fig. 1 institute
Show, Fig. 1 is the structure for the 2 road power synthesis amplifier of lamped element that suspended substrate stripline is integrated based on medium that the embodiment of the present invention 1 provides
At block diagram.In this example, the lamped element power synthesis amplifier for integrating suspended substrate stripline based on medium is that 2 road power combings are put
Big device, including 1 power divider, 1 power combiner and 2 M stage power amplifiers.
The M stage power amplifier of the power synthesis amplifier is formed, as shown in Fig. 2, Fig. 2 is that present example 1 provides
The schematic diagram that M stage power amplifier in the power synthesis amplifier of suspended substrate stripline is integrated based on medium.It is M grades described in this example
Power amplifier is single stage power amplifiers, and M 1 forms the single stage power amplifiers use of the power synthesis amplifier
The surface-mount type field effect transistor M W6S010N of Freescale semiconductor company is as core power device；It connects using by 2
Broken line inductance L1, L3,2 broken line inductance L2, L4 for being parallel to ground, 1 double-deck interdigital capacitor C1 for being parallel to ground and 1 series connection
The double-deck interdigital capacitor C2 composition bandpass filtering type input matching circuit；Using by 2 be parallel to ground broken line inductance L5,
L7,2 concatenated broken line inductance L6, L8,1 concatenated bilayer interdigital capacitor C5 and 1 are parallel to the double-deck interdigital capacitor on ground
The bandpass filtering type output matching circuit of C6 composition；Using patch capacitor C3, C4 as capacitance；It is big using series patch
Resistance R and it is parallel to ground patch capacitor CBypassGate bias circuit is constituted, using series-connected helical inductance LRF ChokeBe parallel to
Ground patch capacitor CBypassConstitute drain electrode biasing circuit；The single stage power amplifiers share 4 ports, and RF in is radio frequency input
Port, RF out are radio frequency output port, and Vg is direct grid current voltage to inbound port, and Vd is drain electrode DC voltage to inbound port.
In this example, the composition component value that single stage power amplifiers in the power synthesis amplifier of suspended substrate stripline are integrated based on medium
Are as follows: L1=2.51nH, L2=6.24nH, L3=2.18nH, L4=1.27nH, L5=2.08nH, L6=5.87nH, L7=
10nH, L8=1.65nH, C1=0.29pF, C2=4.45pF, C3=C4=24pF, C5=2.56pF, C6=0.18pF, R=
200Ω,CBypass=24pF, LRF Choke=72nH, Vg=2.7V, Vd=28V.
The power divider/synthesizer of the power synthesis amplifier is formed, as shown in figure 3, Fig. 3 is that present example 1 mentions
The schematic diagram that power divider/synthesizer in the power synthesis amplifier of suspended substrate stripline is integrated based on medium supplied.In this example, composition
The power divider/synthesizer of the power synthesis amplifier is 2 tunnel power divider/synthesizers, using by 1 series-connected helical inductance
L9 and 2 is parallel to double-deck interdigital capacitor C7, the C8 on ground, the low-pass filtering type match circuit of composition.Power distribution/the conjunction
It grows up to be a useful person and shares 3 ports Port1, Port2 and Port3, it is output end that wherein Port1, which is for input port, Port2 and Port3,
Mouthful.Welding kesistance R improves the isolation of the power divider/synthesizer between Port2 and Port3.It is described in this example
The lamped element value of power divider/synthesizer are as follows: C7=C8=2.22pF, L9=12.4nH, R=100 Ω.
As shown in Figure 4, Figure 5, Fig. 4 is the lamped element function that suspended substrate stripline is integrated based on medium that the embodiment of the present invention 1 provides
The section view of rate combining amplifier, Fig. 5 are the lamped element power conjunction that the medium that the embodiment of the present invention 1 provides integrates suspended substrate stripline
At the 3 dimensional drawing of amplifier.
In the present embodiment, the lamped element power synthesis amplifier that the medium integrates suspended substrate stripline is based on the integrated suspension of medium
Line platform, it includes 5 layers of double-sided printed-circuit board laminated from top to bottom that the medium, which integrates suspended substrate stripline platform, i.e., arrives including G1
G10 totally 10 layers of metal layer, filled media between the double layer of metal of every layer circuit board, the intermediate plate of the 1st to the 5th layer of dielectric-slab according to
Secondary is FR4, Fr4, Rogers5880, Fr4, FR4, and thickness is followed successively by 0.6mm, 2mm, 0.254mm, 2mm, 0.6mm.It is described to be based on
The power synthesis amplifier circuit that medium integrates suspended substrate stripline is located at the upper and lower surface of the 3rd layer of dielectric-slab, i.e. G5 and G6 layers.2nd layer
With the 4th layer of dielectric-slab respectively by hollow out, so that guaranteeing the 1st layer and the 3rd layer and the 3rd layer and the 5th layer respectively constitutes 2 air chambers.
Signal ground of the metal layer G2 and G9 as suspended substrate stripline circuit.As shown in fig. 6, Fig. 6 be the embodiment of the present invention 1 provide based on medium
The top view of 3rd layer of dielectric-slab of the power synthesis amplifier of integrated suspended substrate stripline.The power that suspended substrate stripline is integrated based on medium
Input and output feeder line in combining amplifier, interdigital capacitor and is all made of two-layer wiring, metal plate for matched spiral inductance
It is connected between G5 and G6 by metal aperture, can achieve the mesh for reducing conductor losses using the double-deck feeder line and double-layer spiral inductance
, smaller circuit area can be occupied under same capacitance demand using the double-deck interdigital capacitor.
In the present embodiment, the power synthesis amplifier that suspended substrate stripline is integrated based on medium is encapsulated, only 70 grams of quality certainly,
Centre frequency is 0.9GHz, and the circuit size realized is 0.65 λg×0.34λg×0.03λg, wherein λgIt is at centre frequency
Guide wavelength, the described circuit weight and size are much smaller than circuit weight and size in existing document, solve current power
The problem of combining amplifier volume is big, and additional metal shield shell is needed to close, meanwhile, the flat of suspended substrate stripline is integrated based on medium
Platform, the power synthesis amplifier also have the advantages that loss is low, integrated, is electromagnetically shielded, is at low cost.
Fig. 7 is that the power synthesis amplifier emulation for integrating suspended substrate stripline based on medium that the embodiment of the present invention 1 provides obtains
Return loss and small-signal gain curve graph.Fig. 8 is that the power for integrating suspended substrate stripline based on medium that the embodiment of the present invention 1 provides closes
At the output power that amplifier emulation obtains, gain and power added efficiency curve graph.By Fig. 7, Fig. 8 it is found that the present invention is implemented
The example power synthesis amplifier that suspended substrate stripline is integrated based on medium, from 0.8 to 0.9GHz, the input and output return loss of emulation
It is better than 15dB, it is ± 0.5dB with interior gain flatness that gain, which is greater than 18dB, and the power of 1dB compression point is 43.2dBm, power
Added efficiency is 48%.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (7)
1. integrating the lamped element power synthesis amplifier of suspended substrate stripline based on medium, which is characterized in that the lamped element power
Combining amplifier includes:
The road N power divider, the road N power combiner, the road N power amplifier；N is the positive integer more than or equal to 2, and the road N power is put
The every of big device is a M stage power amplifier all the way, and M is the positive integer more than or equal to 1；One end of the road N power divider connects
One end of input terminal, the road N power combiner connects output end, and N number of M stage power amplifier is connected in parallel on the another of the road N power divider
Between one end and the other end of the road N power combiner.
2. the lamped element power synthesis amplifier according to claim 1 for being integrated suspended substrate stripline based on medium, feature are existed
In the road the N power distribution/road N synthesizer feeder line is all made of double-layer structure.
3. the lamped element power synthesis amplifier according to claim 1 for being integrated suspended substrate stripline based on medium, feature are existed
In each stage power amplifier of M stage power amplifier includes:
Bandpass filtering type input matching network, field effect transistor, gate bias circuit, drain electrode biasing circuit, input blocking
Capacitor C3, output capacitance C4, bandpass filtering type output matching network；
Power amplifier input is connect with one end of bandpass filtering type input matching network, the input matching of bandpass filtering type
The other end of network with input capacitance C3 one end connect, input the capacitance C3 other end and gate bias circuit with
The grid of field effect transistor connects, field effect transistor source electrode ground connection, field effect transistor drain electrode and drain electrode biasing circuit and
One end connection for exporting capacitance C4 exports the other end and the one of bandpass filtering type output matching network of capacitance C4
End connection, the other end of bandpass filtering type output matching network are connect with output end.
4. the lamped element power synthesis amplifier according to claim 3 for being integrated suspended substrate stripline based on medium, feature are existed
In bandpass filtering type input matching network includes: capacitor C1-C2, inductance L1-L4；The one of one end of capacitor C1 and inductance L1
End is connect with input terminal, the other end ground connection of capacitor C1；The one of the other end of inductance L1 and one end of inductance L2 and inductance L3
End is all connected with, and the other end of inductance L2 ground connection, the other end of inductance L3 is connect with one end of capacitor C2, the other end of capacitor C2 and
One end of one end and inductance L4 for inputting capacitance C3 is all connected with, the other end ground connection of inductance L4；
Gate bias circuit includes: resistance R, shunt capacitance CBypass；One end of resistance R and direct grid current supply electricity to inbound port and
Shunt capacitance CBypassOne end be all connected with, shunt capacitance CBypassThe other end ground connection, the other end and field effect transistor of resistance R
The grid of pipe connects；
The biasing circuit that drains includes: spiral inductance LRF Choke, shunt capacitance CBypass；Spiral inductance LRF ChokeOne end and drain electrode
Direct current is to inbound port and shunt capacitance CBypassOne end be all connected with, shunt capacitance CBypassThe other end ground connection, spiral electricity
Feel LRF ChokeThe other end and field effect transistor drain electrode connect；
Bandpass filtering type output matching network includes: capacitor C5 and C6, inductance L5-L8；One end of capacitor C5 and inductance L5's
One end and one end of output capacitance C4 are all connected with, and the other end ground connection of inductance L5, the other end of capacitor C5 is with inductance L6's
One end connection, the other end of inductance L6 and one end of one end of inductance L7 and inductance L8 are all connected with, the other end ground connection of inductance L7,
The other end of inductance L8 and one end of capacitor C6 are connect with output end, the other end ground connection of capacitor C6.
5. the lamped element power synthesis amplifier according to claim 4 for being integrated suspended substrate stripline based on medium, feature are existed
In capacitor C1, C2, C5, C6 are the double-deck interdigital capacitor, and the double layer of metal of interdigital terminal is interconnected by metal throuth hole.
6. the lamped element power synthesis amplifier according to claim 1 for being integrated suspended substrate stripline based on medium, feature are existed
In the setting of lumped power combining amplifier integrates on suspended substrate stripline platform in medium, and it includes 5 layers that the medium, which integrates suspended substrate stripline platform,
The double-sided printed-circuit board laminated from top to bottom, the design of the 3rd layer circuit board upper and lower surfaces have the power combing based on lamped element
Amplifier circuit, the 2nd layer and the 4th layer circuit board difference hollow out, guarantees the 1st layer and the 3rd layer circuit board, the 3rd layer and the 5th layer of circuit
Cavity structure is formed between plate.
7. the lamped element power synthesis amplifier according to claim 6 for being integrated suspended substrate stripline based on medium, feature are existed
Fr4 is used in the intermediate medium that, medium integrates the 1st layer, the 2nd layer, the 4th layer of suspended substrate stripline platform and the 5th layer circuit board, the 3rd layer
The intermediate medium of circuit board uses Rogers5880.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810730106.5A CN109039290A (en) | 2018-07-05 | 2018-07-05 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810730106.5A CN109039290A (en) | 2018-07-05 | 2018-07-05 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109039290A true CN109039290A (en) | 2018-12-18 |
Family
ID=64640313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810730106.5A Pending CN109039290A (en) | 2018-07-05 | 2018-07-05 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109039290A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115567017A (en) * | 2021-07-02 | 2023-01-03 | 苏州华太电子技术股份有限公司 | Radio frequency circuit based on high-voltage nonlinear power element |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150070096A1 (en) * | 2013-09-11 | 2015-03-12 | Mitsubishi Electric Corporation | Power amplifier |
| CN104935267A (en) * | 2015-07-01 | 2015-09-23 | 成都众易通科技有限公司 | Signal amplification biasing circuit used in automobile positioning radio-frequency receiving system |
| CN106487342A (en) * | 2016-10-24 | 2017-03-08 | 成都嘉纳海威科技有限责任公司 | A kind of matrix power amplifier based on transistor stack structure |
| CN106533372A (en) * | 2016-11-18 | 2017-03-22 | 中国电子科技集团公司第四十研究所 | Piecewise external matching type miniature power amplifier |
| CN107370468A (en) * | 2017-07-23 | 2017-11-21 | 成都斯普奥汀科技有限公司 | A kind of power amplifier source for magnetic resonance coupling wireless power transmission |
| CN207368982U (en) * | 2017-12-18 | 2018-05-15 | 西安茂德通讯科技有限公司 | A kind of field-effect transistor pulse power amplifier |
-
2018
- 2018-07-05 CN CN201810730106.5A patent/CN109039290A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20150070096A1 (en) * | 2013-09-11 | 2015-03-12 | Mitsubishi Electric Corporation | Power amplifier |
| CN104935267A (en) * | 2015-07-01 | 2015-09-23 | 成都众易通科技有限公司 | Signal amplification biasing circuit used in automobile positioning radio-frequency receiving system |
| CN106487342A (en) * | 2016-10-24 | 2017-03-08 | 成都嘉纳海威科技有限责任公司 | A kind of matrix power amplifier based on transistor stack structure |
| CN106533372A (en) * | 2016-11-18 | 2017-03-22 | 中国电子科技集团公司第四十研究所 | Piecewise external matching type miniature power amplifier |
| CN107370468A (en) * | 2017-07-23 | 2017-11-21 | 成都斯普奥汀科技有限公司 | A kind of power amplifier source for magnetic resonance coupling wireless power transmission |
| CN207368982U (en) * | 2017-12-18 | 2018-05-15 | 西安茂德通讯科技有限公司 | A kind of field-effect transistor pulse power amplifier |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115567017A (en) * | 2021-07-02 | 2023-01-03 | 苏州华太电子技术股份有限公司 | Radio frequency circuit based on high-voltage nonlinear power element |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| KR101008295B1 (en) | Multilayer band pass filter | |
| CN104518266B (en) | Reconfigurable dual-band band-pass filter | |
| CN104900950B (en) | Electricity based on bimorph resonators adjusts four pass filters | |
| CN107994875A (en) | Ultra wide band based on compound reactance LC filter networks stacks power amplifier | |
| CN105529515B (en) | A kind of tunable band-pass bandstop filter based on open circuit minor matters loading | |
| CN106533374A (en) | Multiband GSM radio-frequency power amplifier | |
| CN102403562A (en) | Powder divider integrating a dual-frequency bandpass filter | |
| CN109449548B (en) | Reconfigurable multifunctional filter based on half-wave resonator | |
| CN109167582A (en) | Broadband bandpass filtering power amplifier based on frequency selectivity coupling | |
| CN108667436A (en) | A kind of power synthesis network of low-loss power amplifier | |
| CN106411314B (en) | Differential coupling circuit and medium based on transformer integrate suspended substrate stripline differential coupler | |
| CN108923760A (en) | A kind of Central Symmetric Doherty power amplifier and its design method | |
| CN109039290A (en) | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium | |
| US6768383B2 (en) | High-frequency amplifier | |
| CN106533372A (en) | Piecewise external matching type miniature power amplifier | |
| CN205159476U (en) | Power distribution unit with double frequency -band filtering function | |
| CN202308258U (en) | Power divider integrated with single-frequency band-pass filters | |
| CN204375894U (en) | A kind of restructural double-frequency bandpass filtering device | |
| CN218387447U (en) | Parallel negative feedback ultra-wideband low-noise amplifier based on cross-junction type microstrip matching | |
| CN204244192U (en) | LC filter circuit and high-frequency model | |
| CN107579325A (en) | A kind of LNA model filters power splitter | |
| CN207732732U (en) | Ultra wide band based on compound reactance LC filter networks stacks power amplifier | |
| CN106100602A (en) | A kind of wideband balun impedance transformer | |
| CN202308257U (en) | Power divider integrated with double-frequency band-pass filter | |
| Chen et al. | Lowpass filter using offset double-sided parallel-strip lines |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20181218 |