CN104935267A - Signal amplification biasing circuit used in automobile positioning radio-frequency receiving system - Google Patents
Signal amplification biasing circuit used in automobile positioning radio-frequency receiving system Download PDFInfo
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- CN104935267A CN104935267A CN201510372909.4A CN201510372909A CN104935267A CN 104935267 A CN104935267 A CN 104935267A CN 201510372909 A CN201510372909 A CN 201510372909A CN 104935267 A CN104935267 A CN 104935267A
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Abstract
The invention discloses a signal amplification biasing circuit used in an automobile positioning radio-frequency receiving system. The signal amplification biasing circuit used in the automobile positioning radio-frequency receiving system comprises a field-effect tube T1, wherein a negative feedback network is arranged between a grid electrode and a drain electrode of the field-effect tube T1; the grid electrode of the field-effect tube T1 is also connected with an input matching network; the drain electrode of the field-effect tube T1 is also connected with an output matching network; a source electrode of the field-effect tube T1 is grounded; the negative feedback network comprises an inductor L1, a resistor R4, a resistor R2 and an inductor L2 which are sequentially connected in series, wherein the inductor L1 is connected with the grid electrode of the field-effect tube T1; the inductor L2 is connected with the drain electrode of the field-effect tube T1; a connecting line between the inductor L1 and the resistor R4 is further connected with a grounded capacitor C4; a connecting line between the resistor R4 and the resistor R2 is further connected with a grounded resistor R1; a connecting line between the resistor R2 and the inductor L2 is further connected with a grounded capacitor C3; a connecting line between the resistor R2 and the inductor L2 is further connected with a resistor R3 which is accessed to a power supply.
Description
Technical field
The present invention relates to automobile receiver technology, the signal specifically for bus location radio-frequency receiving system amplifies biasing circuit.
Background technology
Low noise amplifier is the requisite vitals in communication, radar, electronic countermeasures and remote control telemetering system, it is positioned at the front end of radio-frequency receiving system, major function carries out Linear Amplifer to the weak radio-frequency signal that antenna receives, suppress various noise jamming simultaneously, improve the sensitivity of system.Particularly along with communication, electronic countermeasures, microwave measurement etc. are towards broadband, low noise, miniaturization development, the low noise of amplifier and broadband design problem obtain to be paid attention to more and more widely.
Summary of the invention
A kind of signal for bus location radio-frequency receiving system is the object of the present invention is to provide to amplify biasing circuit, propose the bias circuit of the low-noise wide-band amplifier of a 50 ~ 300MHz, this amplifier has excellent gain flatness and noise factor in working frequency range, can improve the sensitivity of receiver.
Object of the present invention is achieved through the following technical solutions: the signal for bus location radio-frequency receiving system amplifies biasing circuit, comprise field effect transistor T1, negative feedback network is provided with between the grid of field effect transistor T1 and drain electrode, the grid of field effect transistor T1 is also connected with input matching network, the drain electrode of field effect transistor T1 is also connected with output matching network, the source ground of field effect transistor T1, described negative feedback network comprises the inductance L 1 of connecting successively, resistance R4, resistance R2, inductance L 2, wherein, inductance L 1 is connected with the grid of field effect transistor T1, inductance L 2 is connected with the drain electrode of field effect transistor T1, connecting line between inductance L 1 and resistance R4 is also connected with the electric capacity C4 of ground connection, connecting line between resistance R4 and resistance R2 is also connected with the resistance R1 of ground connection, connecting line between resistance R2 and inductance L 2 is also connected with the electric capacity C3 of ground connection, connecting line between resistance R2 and inductance L 2 is also connected with the resistance R3 accessing power supply, connecting line between resistance R3 and power supply is also connected with the electric capacity C2 of ground connection and the electric capacity C1 of ground connection.
The design principle of foregoing circuit is: the major obstacle of wide-band amplifier design is the restriction of the gain bandwidth product of active device, and namely the gain of active device declines with 6dB/ octave in the high-end increase along with frequency of frequency.The method for designing that wide-band amplifier is conventional has: balanced structure formula amplifier, active matching circuit, and reactance network mates, broadband resistors match, distributed amplifier etc.The present invention adopts negative feedback amplifier, has following significantly advantage: reduce the susceptibility that whole circuit changes transistor self performance; Obtain good input resistant matching and lower noise factor; Increase the stability of amplifier in working band; Increase the linearity etc. of amplifier.Therefore, negative-feedback technology is widely deployed in the middle of the design of wide-band amplifier.In the present invention, arrange negative feedback network between the grid of field effect transistor T1 and drain electrode, field effect transistor T1 is made up of electric capacity, resistance and inductance.Wherein the effect of electric capacity prevents the direct current biasing of negative feedback network to transistor from having an impact; The effect of inductance reduces amplifier at the high-end feedback quantity of frequency, and the gain of offsetting amplifier increases with frequency and reduces, by regulating the size of inductance can the flatness of resonance-amplifier gain.Resistance plays primary feedback effect, can be regulated the number of feedback quantity by the size of adjusting resistance value.Simultaneously as feedback resistance R=g
m× Z
0 2time, amplifier can obtain good impedance matching.According to the low noise amplifier that foregoing circuit is arranged, in the working frequency range of broadband (50 ~ 300MHz), gain is greater than 22dB, and flatness is less than ± 0.3dB, and noise factor is less than 1.25, and input standing wave is less than 1.4, exports standing wave and is less than 1.3.Can find out that test result and the simulation result of low noise amplifier coincide better.But the noise factor of test is slightly poorer than simulation result, ratio of gains simulation result is slightly low, and this is the impact of the dead resistance due to electric capacity, inductance, and during debugging, the input port of filter and output port are not mate completely simultaneously, the ground connection property of device is not fine, and the impact of test cable and joint.
Preferably, electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4 are power filtering capacitor.
Preferably, inductance L 2 and inductance L 1 are for being radio frequency choke coil.
The invention has the advantages that: circuit structure arranged according to the present invention, can show that low-noise wide-band amplifier is in the operating frequency band of 50-300MHz, gain is greater than 22dB, flatness is less than ± 0.3dB, noise factor is less than 1.25, and input standing wave is less than 1.4, and input standing wave is less than 1.3.
Accompanying drawing explanation
Fig. 1 is circuit diagram of the present invention.
Embodiment
Below in conjunction with embodiment and accompanying drawing, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
embodiment 1:
As shown in Figure 1.
Signal for bus location radio-frequency receiving system amplifies biasing circuit, comprise field effect transistor T1, negative feedback network is provided with between the grid of field effect transistor T1 and drain electrode, the grid of field effect transistor T1 is also connected with input matching network, the drain electrode of field effect transistor T1 is also connected with output matching network, the source ground of field effect transistor T1, described negative feedback network comprises the inductance L 1 of connecting successively, resistance R4, resistance R2, inductance L 2, wherein, inductance L 1 is connected with the grid of field effect transistor T1, inductance L 2 is connected with the drain electrode of field effect transistor T1, connecting line between inductance L 1 and resistance R4 is also connected with the electric capacity C4 of ground connection, connecting line between resistance R4 and resistance R2 is also connected with the resistance R1 of ground connection, connecting line between resistance R2 and inductance L 2 is also connected with the electric capacity C3 of ground connection, connecting line between resistance R2 and inductance L 2 is also connected with the resistance R3 accessing power supply, connecting line between resistance R3 and power supply is also connected with the electric capacity C2 of ground connection and the electric capacity C1 of ground connection.
The design principle of foregoing circuit is: the major obstacle of wide-band amplifier design is the restriction of the gain bandwidth product of active device, and namely the gain of active device declines with 6dB/ octave in the high-end increase along with frequency of frequency.The method for designing that wide-band amplifier is conventional has: balanced structure formula amplifier, active matching circuit, and reactance network mates, broadband resistors match, distributed amplifier etc.The present invention adopts negative feedback amplifier, has following significantly advantage: reduce the susceptibility that whole circuit changes transistor self performance; Obtain good input resistant matching and lower noise factor; Increase the stability of amplifier in working band; Increase the linearity etc. of amplifier.Therefore, negative-feedback technology is widely deployed in the middle of the design of wide-band amplifier.In the present invention, arrange negative feedback network between the grid of field effect transistor T1 and drain electrode, field effect transistor T1 is made up of electric capacity, resistance and inductance.Wherein the effect of electric capacity prevents the direct current biasing of negative feedback network to transistor from having an impact; The effect of inductance reduces amplifier at the high-end feedback quantity of frequency, and the gain of offsetting amplifier increases with frequency and reduces, by regulating the size of inductance can the flatness of resonance-amplifier gain.Resistance plays primary feedback effect, can be regulated the number of feedback quantity by the size of adjusting resistance value.Simultaneously as feedback resistance R=g
m× Z
0 2time, amplifier can obtain good impedance matching.According to the low noise amplifier that foregoing circuit is arranged, in the working frequency range of broadband (50 ~ 300MHz), gain is greater than 22dB, and flatness is less than ± 0.3dB, and noise factor is less than 1.25, and input standing wave is less than 1.4, exports standing wave and is less than 1.3.Can find out that test result and the simulation result of low noise amplifier coincide better.But the noise factor of test is slightly poorer than simulation result, ratio of gains simulation result is slightly low, and this is the impact of the dead resistance due to electric capacity, inductance, and during debugging, the input port of filter and output port are not mate completely simultaneously, the ground connection property of device is not fine, and the impact of test cable and joint.
Preferably, electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4 are power filtering capacitor.
Preferably, inductance L 2 and inductance L 1 are for being radio frequency choke coil.
As mentioned above, then well the present invention can be realized.
Claims (3)
1. the signal for bus location radio-frequency receiving system amplifies biasing circuit, it is characterized in that: comprise field effect transistor T1, negative feedback network is provided with between the grid of field effect transistor T1 and drain electrode, the grid of field effect transistor T1 is also connected with input matching network, the drain electrode of field effect transistor T1 is also connected with output matching network, the source ground of field effect transistor T1, described negative feedback network comprises the inductance L 1 of connecting successively, resistance R4, resistance R2, inductance L 2, wherein, inductance L 1 is connected with the grid of field effect transistor T1, inductance L 2 is connected with the drain electrode of field effect transistor T1, connecting line between inductance L 1 and resistance R4 is also connected with the electric capacity C4 of ground connection, connecting line between resistance R4 and resistance R2 is also connected with the resistance R1 of ground connection, connecting line between resistance R2 and inductance L 2 is also connected with the electric capacity C3 of ground connection, connecting line between resistance R2 and inductance L 2 is also connected with the resistance R3 accessing power supply, connecting line between resistance R3 and power supply is also connected with the electric capacity C2 of ground connection and the electric capacity C1 of ground connection.
2. the signal for bus location radio-frequency receiving system according to claim 1 amplifies biasing circuit, it is characterized in that: electric capacity C1, electric capacity C2, electric capacity C3, electric capacity C4 are power filtering capacitor.
3. the signal for bus location radio-frequency receiving system according to claim 1 amplifies biasing circuit, it is characterized in that: inductance L 2 and inductance L 1 are for being radio frequency choke coil.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109039290A (en) * | 2018-07-05 | 2018-12-18 | 电子科技大学 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
Citations (4)
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CN101789761A (en) * | 2010-02-02 | 2010-07-28 | 杭州电子科技大学 | Capacitance negative feedback type low noise amplifier |
CN201541238U (en) * | 2009-09-11 | 2010-08-04 | 清华大学 | Preamplifier of magnetic resonance imaging MRI system capable of reducing low-frequency noise |
JP5040703B2 (en) * | 2008-02-13 | 2012-10-03 | 住友電気工業株式会社 | amplifier |
CN204633720U (en) * | 2015-07-01 | 2015-09-09 | 成都众易通科技有限公司 | A kind of signal for bus location amplifies biasing circuit |
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2015
- 2015-07-01 CN CN201510372909.4A patent/CN104935267A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5040703B2 (en) * | 2008-02-13 | 2012-10-03 | 住友電気工業株式会社 | amplifier |
CN201541238U (en) * | 2009-09-11 | 2010-08-04 | 清华大学 | Preamplifier of magnetic resonance imaging MRI system capable of reducing low-frequency noise |
CN101789761A (en) * | 2010-02-02 | 2010-07-28 | 杭州电子科技大学 | Capacitance negative feedback type low noise amplifier |
CN204633720U (en) * | 2015-07-01 | 2015-09-09 | 成都众易通科技有限公司 | A kind of signal for bus location amplifies biasing circuit |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109039290A (en) * | 2018-07-05 | 2018-12-18 | 电子科技大学 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
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Application publication date: 20150923 |