CN110138350A - A kind of power amplifier with harmonic suppression circuit - Google Patents
A kind of power amplifier with harmonic suppression circuit Download PDFInfo
- Publication number
- CN110138350A CN110138350A CN201910359157.6A CN201910359157A CN110138350A CN 110138350 A CN110138350 A CN 110138350A CN 201910359157 A CN201910359157 A CN 201910359157A CN 110138350 A CN110138350 A CN 110138350A
- Authority
- CN
- China
- Prior art keywords
- power amplifier
- suppression circuit
- network
- input
- series resonant
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000001629 suppression Effects 0.000 title claims abstract description 28
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 claims description 8
- 239000003990 capacitor Substances 0.000 claims description 7
- 238000001914 filtration Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 abstract description 9
- 238000004891 communication Methods 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000006835 compression Effects 0.000 description 4
- 238000007906 compression Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000013461 design Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000003321 amplification Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 238000010923 batch production Methods 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- TVEXGJYMHHTVKP-UHFFFAOYSA-N 6-oxabicyclo[3.2.1]oct-3-en-7-one Chemical compound C1C2C(=O)OC1C=CC2 TVEXGJYMHHTVKP-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/26—Modifications of amplifiers to reduce influence of noise generated by amplifying elements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
- H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a kind of power amplifiers with harmonic suppression circuit, it is related to wireless communication and field of radio frequency integrated circuits, including input matching network, bonding line, biasing circuit, input transistors, cascode transistor, series resonant network, series resonant network and load matching network.Wherein, one end of input matching network is connected with the grid of input transistors, and the other end is connected with input signal；One end of bonding line is connected with the source level of input transistors, and the other end is connected with chip with reference to ground.The present invention filters out secondary, the contour rd harmonic signal three times of signal using series resonant network and series resonant network, loaded antenna is driven by load matching network again and emission of radio frequency signals is gone out, its circuit structure is simple and integrated level is high, can improve the performances such as the linearity, efficiency and transmission power of power amplifier.
Description
Technical field
The present invention relates to wireless communication and field of radio frequency integrated circuits more particularly to a kind of power with harmonic suppression circuit
Amplifier.
Background technique
Radio-frequency power amplifier is one of the core circuit module in wireless transmitter, it is desirable that output is high-power to external negative
It carries.Power amplifier is usually the maximum module of power consumption in wireless transmitter, in order to reduce power consumption, extends battery life, it is desirable that
Its efficiency with higher.In addition, with the development of communication technology, channel capacity sharply increases, each different wireless system
Between interference increase, to transmitting signal harmonic wave have certain requirement, the work of other systems cannot be interfered, while power is put
Big device will prevent amplitude distortion in Maximum Power Output, propose very to the linearity and harmonics restraint of power amplifier
High requirement.
The method of many optimization linearities is proposed in the design of power amplifier at present, power amplifier generally all can
There is non-linear distortion.When input signal increases, output signal also be will increase, and can generate a series of harmonic signal due to non-linear,
These harmonic content powers very big may influence the emitting performance of fundamental signal, therefore inhibit harmonic signal to become and mention
The important measures of the high power amplifier linearity.Application is more widely using microstrip transmission line, in load matched net at present
Short-circuited transmission line is introduced before the input terminal of network or open circuited transmission line carries out the inhibition of higher hamonic wave, will use in various
The transmission line of λ/n length, accurate transmission line model, which compares to make dependent on technique, to be processed, and the area ratio of general transmission line
It is larger, so that it is bigger using the power amplifier area that the method carries out harmonics restraint, it is unfavorable for the reduction of integrated level, performance
Also unstable, cause the batch production of power amplifier to be restricted.
Therefore, those skilled in the art, which is dedicated to developing one kind, is able to suppress harmonic signal, at the same be conducive to again it is integrated and
The stable power amplifier of performance.
Summary of the invention
In view of the above drawbacks of the prior art, the technical problem to be solved by the present invention is to how prevent power amplifier
Amplitude distortion is generated in Maximum Power Output, while being conducive to the integrated of power amplifier again, and performance is stable and easy to batch
Production.
To achieve the above object, the present invention provides a kind of power amplifiers with harmonic suppression circuit, which is characterized in that
It is humorous including input matching network, bonding line, biasing circuit, input transistors, cascode transistor, series resonant network, parallel connection
Vibrating network and load matching network, wherein one end of input matching network is connected with the grid of input transistors, the other end with
Radio frequency input is connected；One end of bonding line is connected with the source level of input transistors, and the other end is connected with chip with reference to ground.
Further, the source level of the input transistors is connected to ground reference, the input by the bonding line
Matching network and the bonding line realize the input resistant matching of power amplifier jointly.
Further, the routing radical of the bonding line can be adjusted with length of wire bonding, to meet the chip pair
The requirement of impedance matching and stability.
Further, the biasing circuit grid phase with the input transistors and the cascode transistor respectively
Connection, and bias voltage is provided for the input transistors and the cascode transistor.
Further, what the input transistors and the cascode transistor were all made of is the RF CMOS crystalline substance of deep N hydrazine
Body pipe.
Further, described series resonant network one end is connected with the drain terminal of the cascode transistor, and the other end connects
Ground reference is connect, for being shorted to ground for harmonic signal.
Further, the series resonant network is composed in series by two groups of capacitor and inductors, secondary and humorous three times by filtering out
Wave signal improves the linearity.
Further, described series resonant network one end is connected with the drain terminal of the cascode transistor, the other end with
The load matching network is connected, for filtering out harmonic signal.
Further, described load matching network one end is connect with the series resonant network, and the other end and 50 Ω are loaded
Antenna is connected, for antenna load to be matched to the optimum load of the power amplifier Maximum Power Output.
Further, the load matching network is made of capacitance with the inductance for being parallel to ground.
Advantageous effects of the invention are as follows:
1, the present invention is integrated with input and load matched in chip, and component counts outside the chip in application are dropped to most
It is few, integrated level is improved, use cost is reduced.
2, harmonic suppression network of the invention has used series resonant network and series resonant network, and passes through control chip
Adjust resonance frequency to the bonding line length of encapsulation, can effectively inhibit it is secondary, three times and other higher hamonic waves, significantly
Improve the linearity of power amplifier, the performances such as output power.
3, present invention reduces the complexity of circuit, modeling is simple, is easy to adjustment circuit parameter and reaches the design of circuit to want
It asks.
Detailed description of the invention
Fig. 1 is the circuit structure block diagram of a preferred embodiment of the invention；
Fig. 2 is the circuit diagram of a preferred embodiment of the invention；
Fig. 3 is the impedance analogous diagram of the series resonant network of a preferred embodiment of the invention；
Fig. 4 is the impedance analogous diagram of the series resonant network of a preferred embodiment of the invention；
Fig. 5 is that the output power of the power amplifier of a preferred embodiment of the invention changes with the emulation of input power
Curve graph.
Wherein: 1- rf inputs, 2- input matching network, 3- bonding line (Bonding wire), 4- biasing circuit, 5-
Series resonant network, 6- series resonant network, 7- load matching network, 8-Choke inductance, 9- loaded antenna, 10- input crystal
Pipe, 11-cascode transistor.
Specific embodiment
The preferred embodiment of the present invention is introduced below with reference to Figure of description, keeps its technology contents more clear and convenient for reason
Solution.The present invention can be emerged from by many various forms of embodiments, and protection scope of the present invention is not limited only to text
In the embodiment mentioned.In the accompanying drawings, the identical component of structure indicates that structure or function is similar everywhere with same numbers label
Component is indicated with like numeral label.
As shown in Figure 1, a kind of power amplifier with harmonic suppression circuit, mainly includes rf inputs 1, input matching
Network 2, bonding line 3, biasing circuit 4, series resonant network 5, series resonant network 6, load matching network 7, Choke inductance 8,
Loaded antenna 9, input transistors 10 and cascode transistor 11.One end of input matching network 2 connects rf inputs 1, and
The other end connects the grid of input transistors 10, and the source level of input transistors 10 is connected to ground reference by bonding line 3, defeated
Enter matching network 2 and bonding line 3 and realize the input resistant matching of power amplifier jointly, and guarantees the stabilization of power amplifier
Property.Biasing circuit 4 is connected with the grid of input transistors 10 and cascode transistor 11 respectively, is 10 He of input transistors
Cascode transistor 11 provides bias voltage.5 one end of series resonant network is connected with the drain terminal of cascode transistor 11, separately
One end connects ground reference, is shorted to ground for harmonic signal.The leakage of series resonant network 6 one end and cascode transistor 11
End is connected, and the other end is connected with load matching network 7, for inhibiting the transmission of harmonic signal.7 one end of load matching network
It is connect with series resonant network, the other end is connected with loaded antenna 9, for 50 Ω of antenna to be impedance-matched to power amplification
The optimum load of device energy Maximum Power Output.
As shown in Fig. 2, input matching network 2 is by capacitance C1With on-chip inductor L1Composition, the source level of input transistors 10
It is connected with bonding line 3, a positive real impedance can be generated in input terminal, then the imaginary part resonance of input terminal exists by inductance L1
Working frequency, so that input impedance is meshed well into.The routing radical of bonding line 3, length of wire bonding will affect defeated
Enter the stability of impedance value and power amplifier, therefore by the routing radical and routing of bonding line 3 in case study on implementation of the invention
Length is set as adjustable, to meet requirement of the actual chips to impedance matching and stability, i.e., pre- when designing circuit layout
The case where routing is determined when a certain number of pads (Pad) having been stayed to can be used for subsequent actual test.
Biasing circuit 4 is that input transistors 10 and cascode transistor 11 provide DC voltage bias, mainly inclined by generating
Set voltage VB1And VB2Voltage-reference (be not drawn into figure, replace V with voltage sourceB1And VB2) and two RC low-pass filters
Composition.Wherein unillustrated voltage-reference needs work under wide power voltage in figure, and provide Low Drift Temperature coefficient, and stablize
Reliable bias voltage VB1、VB2.Two RC functions of low-pass filter are identical, for biasing circuit 4 and power amplifier to be isolated
Amplifier tube, influence of the big signal of the influence of noise and power amplifier that avoid biasing circuit to biasing circuit.Resistance and electricity
The value of appearance is generally bigger, but it is also contemplated that big influence of the Resistance Thermal Noise to power amplifier, wherein R1And C3Composition
RC low-pass filter is used for cascode transistor 11, and R2And C2The RC low-pass filter of composition is used for input transistors 10.
Input transistors 10 and cascode transistor 11 provide signal amplification, due in RF application to transistor
Requirement it is relatively high, be generally adopted by radio-frequency performance preferably depth N hydrazine RF transistors, while the noise isolation of depth N hydrazine pipe
It is also very good to spend.Input transistors 10 can achieve higher speed using the lesser RF tube of line width in the present embodiment,
There is better radio-frequency performance, obviously advantage is had to the processing of signal；Cascode transistor 11 using thick grid with
And the RF transistors of long line width.What is generally handled due to power amplifier is big signal, in the drain terminal of cascode transistor 11
Instantaneous voltage can reach twice of supply voltage, be likely to breakdown RF transistors at this time, can be big using thick gate transistor
The earth increases its breakdown pressure voltage, so that the RF transistors of power amplifier are more safe and reliable, while cascode crystal
The speed of pipe influences power amplifier will not be very big.Therefore, the combination of such transistor types can achieve extraordinary effect
Fruit.
Series resonant network 5 has two groups of capacitor and inductors to be composed in series, and for filtering out secondary and harmonic signal, improves line
Property degree.Since the concatenated resonant network of inductance capacitance is that low-resistance even may be considered short circuit at resonance frequency.Practical application
In, the bonding line 3 of pad to the encapsulation of chip interior can be equivalent to the relatively high inductance of Q value, after being connected in series to the capacitor i.e.
Constitute series resonance chamber.Wherein, C4And B2Constitute the suppression circuit of second harmonic signal, and C5And B3It constitutes humorous three times
The suppression circuit of wave signal.Since the length of bonding line and the deviation of technique may be such that resonance frequency generates deviation, because
This bonding line B2And B3Routing can be set flexibly, similar with bonding line 3, length of wire bonding is that can adjust with routing radical
Section, need to reserve a certain number of pads in design chips domain, while concatenated capacitor can do some adjustment and trim.
Since secondary and harmonic signal influences maximum to the output signal of power amplifier, only joined in the present embodiment
Second order and three order harmonics suppression circuits similarly, can quadravalence in parallel and higher orders in the application example of other requirements at the higher level
Harmonic suppression circuit is to achieve the purpose that inhibit higher hamonic wave signal.
Series resonant network 6 is by inductance L2With capacitor C6Form a parallel resonance chamber.Theoretically parallel resonance chamber is in resonance
The impedance of frequency be it is very big, can be similar to open a way, then since the inductance Q value of actual use is limited, resonance frequency
Impedance is also limited.Wherein inductance L2For on-chip inductor, Q value is not high but inductance value can be more accurate than bonding line, resonance frequency
The bandwidth that rate can compare at accurate resonance frequency simultaneously also can be bigger, and impedance is less than normal, but can satisfy and press down to harmonic signal
The requirement of system.Influence due to harmonic signal to fundamental frequency signal is maximum, or even since non-linear harmonic signal can hinder
The output of fundamental frequency signal is filled in, therefore the resonance frequency of the series resonant network 6 in this example is set as harmonic signal and corresponds to
Frequency, further suppress the output of harmonic signal.Since the Q value of resonant cavity is lower, the suppression circuit is to second harmonic
Signal is also to have certain inhibiting effect.It similarly, can be by cascading more parallel resonances in the transmitter of requirements at the higher level
Network, and corresponding resonance frequency is set as the corresponding frequency of higher hamonic wave signal and can inhibit more higher hamonic wave signals pair
The influence of fundamental frequency signal.
Load matching network 7 is by capacitance C7With the inductance L for being parallel to ground3Composition.Bulky capacitor C7It is mainly used for being isolated
The effect of direct current signal, because the drain terminal voltage of cascode transistor 11 is substantially supply voltage, rear class has the direct current of oneself
Bias voltage considers that the connection of late-class circuit needs for two direct current biasings to be isolated.And in the power amplifier in this example
Best match load be capacitive load, as long as according to SMITH circle diagram analysis it is found that an inductance can be by 50 Ω of antenna
Load matched to the position of optimum load, due to the inductance value to inductance require it is relatively high, Q value is required it is but less high, therefore
The present embodiment still uses on-chip inductor L3To realize load matching network.Similarly, the optimum load of different embodiments may
It can have differences, matching network would also vary from, but can't change the structure of power amplifier proposed by the present invention.
As shown in figure 3, the impedance of series resonant network is imitative when working frequency corresponding in the present embodiment is 2.45GHz
It can clearly be seen that two concave points, corresponding impedance is almost nil in true figure, it can be approximately considered and be shorted to ground, and it is corresponding
Frequency is respectively 4.9GHz and 7.35GHz, the i.e. place of the two of working frequency times and treble frequency.This one small impedance can incite somebody to action
The harmonic signal of respective frequencies is shorted to ground, to reduce influence of the harmonic signal to output fundamental frequency signal, while in 2.45GHz
Position on impedance or bigger, the harmonic suppression circuit is smaller to the loss of fundamental frequency signal.
As shown in figure 4, corresponding working frequency is 2.45GHz in this example, the resonance frequency of series resonant network 6 should
It is arranged at treble frequency, i.e. 7.35GHz.Such as figure, there is resonance point in the position of 7.35GHz, corresponding impedance is very big,
So big impedance makes harmonic signal that can not be transferred to output end to be curbed well.Fundamental frequency signal simultaneously
Position impedance it is substantially zeroed, therefore the series resonant network can be very good inhibit higher hamonic wave without will affect fundamental frequency letter
Number transmission.
Fig. 5 is when harmonics restraint/be added without harmonic suppression circuit is added, and the output power of power amplifier is with input power
Emulation change curve.Measuring the most common index of power amplifier linearity performance is 1dB compression point, therefore Fig. 5 is corresponding
Be exactly power amplifier 1dB compression point simulation curve figure.As shown, this Example power is put when harmonic suppression circuit is added
The output 1dB compression point of big device can achieve+21.7dBm, and this Example power amplifier when being added without harmonic suppression circuit
Exporting 1dB compression point is only+17.3dBm, this can not meet requirement for many applications, therefore the present invention proposes
Harmonic suppression circuit have extraordinary harmonic suppression effect to the power amplifier of the present embodiment, it will be apparent that improve power and put
The linearity performance of big device, while also improving the peak power output and emission effciency of power amplifier.
The preferred embodiment of the present invention has been described in detail above.It should be appreciated that the ordinary skill of this field is without wound
The property made labour, which according to the present invention can conceive, makes many modifications and variations.Therefore, all technician in the art
Pass through the available technology of logical analysis, reasoning, or a limited experiment on the basis of existing technology under this invention's idea
Scheme, all should be within the scope of protection determined by the claims.
Claims (10)
1. a kind of power amplifier with harmonic suppression circuit, which is characterized in that including input matching network, bonding line, biasing
Circuit, input transistors, cascode transistor, series resonant network, series resonant network and load matching network, wherein defeated
The one end for entering matching network is connected with the grid of input transistors, and the other end is connected with radio frequency input；One end of bonding line
It is connected with the source level of input transistors, the other end is connected with chip with reference to ground.
2. as described in claim 1 with the power amplifier of harmonic suppression circuit, which is characterized in that the input transistors
Source level is connected to ground reference by the bonding line, and the input matching network realizes that power is put with the bonding line jointly
The input resistant matching of big device.
3. as claimed in claim 2 with the power amplifier of harmonic suppression circuit, which is characterized in that the routing of the bonding line
Radical can be adjusted with length of wire bonding, to meet requirement of the chip to impedance matching and stability.
4. as described in claim 1 with the power amplifier of harmonic suppression circuit, which is characterized in that the biasing circuit difference
It is connected with the grid of the input transistors and the cascode transistor, and is input transistors and described
Cascode transistor provides bias voltage.
5. as claimed in claim 4 with the power amplifier of harmonic suppression circuit, which is characterized in that the input transistors with
What the cascode transistor was all made of is the RF CMOS transistor of deep N hydrazine.
6. as described in claim 1 with the power amplifier of harmonic suppression circuit, which is characterized in that the series resonant network
One end is connected with the drain terminal of the cascode transistor, and the other end connects ground reference, for harmonic signal to be shorted to
Ground.
7. as described in claim 1 with the power amplifier of harmonic suppression circuit, which is characterized in that the series resonant network
It is composed in series by two groups of capacitor and inductors, improves the linearity by filtering out secondary and harmonic signal.
8. as described in claim 1 with the power amplifier of harmonic suppression circuit, which is characterized in that the series resonant network
One end is connected with the drain terminal of the cascode transistor, and the other end is connected with the load matching network, humorous for filtering out
Wave signal.
9. as described in claim 1 with the power amplifier of harmonic suppression circuit, which is characterized in that the load matching network
One end is connect with the series resonant network, and the other end is connected with 50 Ω loaded antennas, for antenna load to be matched to institute
State the optimum load of power amplifier Maximum Power Output.
10. as claimed in claim 9 with the power amplifier of harmonic suppression circuit, which is characterized in that the load matched net
Network is made of capacitance with the inductance for being parallel to ground.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910359157.6A CN110138350A (en) | 2019-04-30 | 2019-04-30 | A kind of power amplifier with harmonic suppression circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910359157.6A CN110138350A (en) | 2019-04-30 | 2019-04-30 | A kind of power amplifier with harmonic suppression circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN110138350A true CN110138350A (en) | 2019-08-16 |
Family
ID=67575823
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910359157.6A Pending CN110138350A (en) | 2019-04-30 | 2019-04-30 | A kind of power amplifier with harmonic suppression circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN110138350A (en) |
Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729975A (en) * | 2019-10-11 | 2020-01-24 | 贵州省质安交通工程监控检测中心有限责任公司 | Magnetic coupling resonant wireless power transmission power amplification system |
| CN111294067A (en) * | 2020-01-16 | 2020-06-16 | 上海闻泰信息技术有限公司 | Diversity receiving module, processing method of radiation stray and electronic equipment |
| CN111478672A (en) * | 2020-04-10 | 2020-07-31 | 四川和芯微电子股份有限公司 | Radio frequency power amplifier |
| CN111510077A (en) * | 2020-04-24 | 2020-08-07 | 苏州远创达科技有限公司 | Broadband Doherty amplifier |
| CN112532198A (en) * | 2020-12-03 | 2021-03-19 | 南华大学 | Radio frequency ion source impedance matching method and device |
| CN113746439A (en) * | 2021-09-10 | 2021-12-03 | 中国科学院微电子研究所 | Novel radio frequency power amplifier internal matching circuit |
| CN114050837A (en) * | 2022-01-17 | 2022-02-15 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency module for automatically controlling harmonic impedance, electronic equipment and impedance adjusting method |
| CN116436422A (en) * | 2023-04-25 | 2023-07-14 | 广州慧智微电子股份有限公司 | Amplifier |
| CN116913903A (en) * | 2023-07-28 | 2023-10-20 | 河北博威集成电路有限公司 | Radio frequency power amplification chip and package |
| WO2023202308A1 (en) * | 2022-04-18 | 2023-10-26 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier circuit, and radio frequency chip |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6236274B1 (en) * | 2000-01-04 | 2001-05-22 | Industrial Technology Research Institute | Second harmonic terminations for high efficiency radio frequency dual-band power amplifier |
| US20080290947A1 (en) * | 2007-05-24 | 2008-11-27 | Dawe Geoffrey C | Reconfigurable tunable rf power amplifier |
| CN101888212A (en) * | 2010-04-30 | 2010-11-17 | 苏州英诺迅科技有限公司 | Circuit structure capable of increasing linearity and power added efficiency of power amplifier |
| US20150365057A1 (en) * | 2014-06-16 | 2015-12-17 | Skyworks Solutions, Inc. | Apparatus and methods for power amplifier output matching |
| US20160013758A1 (en) * | 2014-07-11 | 2016-01-14 | Skyworks Solutions, Inc. | Power amplifier with termination circuit and resonant circuit |
| CN106549638A (en) * | 2016-10-31 | 2017-03-29 | 唯捷创芯(天津)电子技术股份有限公司 | A kind of suppression harmonic wave and spuious radio-frequency power amplifier, chip and communication terminal |
| WO2018151437A1 (en) * | 2017-02-16 | 2018-08-23 | 한밭대학교 산학협력단 | Low-noise amplifier equipped with notch filtering |
-
2019
- 2019-04-30 CN CN201910359157.6A patent/CN110138350A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6236274B1 (en) * | 2000-01-04 | 2001-05-22 | Industrial Technology Research Institute | Second harmonic terminations for high efficiency radio frequency dual-band power amplifier |
| US20080290947A1 (en) * | 2007-05-24 | 2008-11-27 | Dawe Geoffrey C | Reconfigurable tunable rf power amplifier |
| CN101888212A (en) * | 2010-04-30 | 2010-11-17 | 苏州英诺迅科技有限公司 | Circuit structure capable of increasing linearity and power added efficiency of power amplifier |
| US20150365057A1 (en) * | 2014-06-16 | 2015-12-17 | Skyworks Solutions, Inc. | Apparatus and methods for power amplifier output matching |
| US20160013758A1 (en) * | 2014-07-11 | 2016-01-14 | Skyworks Solutions, Inc. | Power amplifier with termination circuit and resonant circuit |
| CN106549638A (en) * | 2016-10-31 | 2017-03-29 | 唯捷创芯(天津)电子技术股份有限公司 | A kind of suppression harmonic wave and spuious radio-frequency power amplifier, chip and communication terminal |
| WO2018151437A1 (en) * | 2017-02-16 | 2018-08-23 | 한밭대학교 산학협력단 | Low-noise amplifier equipped with notch filtering |
Non-Patent Citations (1)
| Title |
|---|
| UMUT KODAK; GABRIEL M. REBEIZ: "《A 5G 28-GHz Common-Leg T/R Front-End in 45-nm CMOS SOI With 3.7-dB NF and ?30-dBc EVM With 64-QAM/500-MBaud 》", 《IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES》 * |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110729975B (en) * | 2019-10-11 | 2023-10-27 | 贵州省质安交通工程监控检测中心有限责任公司 | Magnetic coupling resonant wireless power transmission power amplifier system |
| CN110729975A (en) * | 2019-10-11 | 2020-01-24 | 贵州省质安交通工程监控检测中心有限责任公司 | Magnetic coupling resonant wireless power transmission power amplification system |
| CN111294067A (en) * | 2020-01-16 | 2020-06-16 | 上海闻泰信息技术有限公司 | Diversity receiving module, processing method of radiation stray and electronic equipment |
| CN111478672A (en) * | 2020-04-10 | 2020-07-31 | 四川和芯微电子股份有限公司 | Radio frequency power amplifier |
| CN111478672B (en) * | 2020-04-10 | 2024-06-11 | 四川和芯微电子股份有限公司 | Radio frequency power amplifier |
| CN111510077A (en) * | 2020-04-24 | 2020-08-07 | 苏州远创达科技有限公司 | Broadband Doherty amplifier |
| WO2021212818A1 (en) * | 2020-04-24 | 2021-10-28 | 苏州远创达科技有限公司 | Broadband doherty amplifier |
| CN112532198A (en) * | 2020-12-03 | 2021-03-19 | 南华大学 | Radio frequency ion source impedance matching method and device |
| CN112532198B (en) * | 2020-12-03 | 2023-06-27 | 南华大学 | Radio frequency ion source impedance matching method and device |
| CN113746439A (en) * | 2021-09-10 | 2021-12-03 | 中国科学院微电子研究所 | Novel radio frequency power amplifier internal matching circuit |
| CN114050837B (en) * | 2022-01-17 | 2022-04-15 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency module for automatically controlling harmonic impedance, electronic equipment and impedance adjusting method |
| CN114050837A (en) * | 2022-01-17 | 2022-02-15 | 唯捷创芯(天津)电子技术股份有限公司 | Radio frequency module for automatically controlling harmonic impedance, electronic equipment and impedance adjusting method |
| WO2023202308A1 (en) * | 2022-04-18 | 2023-10-26 | 深圳飞骧科技股份有限公司 | Radio frequency amplifier circuit, and radio frequency chip |
| CN116436422A (en) * | 2023-04-25 | 2023-07-14 | 广州慧智微电子股份有限公司 | Amplifier |
| CN116436422B (en) * | 2023-04-25 | 2024-04-09 | 广州慧智微电子股份有限公司 | Amplifier |
| CN116913903A (en) * | 2023-07-28 | 2023-10-20 | 河北博威集成电路有限公司 | Radio frequency power amplification chip and package |
| CN116913903B (en) * | 2023-07-28 | 2024-03-12 | 河北博威集成电路有限公司 | Radio frequency power amplification chip and package |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN110138350A (en) | A kind of power amplifier with harmonic suppression circuit | |
| KR930001293B1 (en) | High frequency power amp | |
| TWI654831B (en) | Communication module | |
| US11616480B2 (en) | Power amplifier circuit | |
| CN107171647A (en) | Adaptive bias circuit and wireless transmitting system with low-loss and temperature-compensating | |
| CN112187184A (en) | Configurable high-efficiency power amplifier | |
| CN217216506U (en) | Radio frequency amplifier circuit and radio frequency chip | |
| KR100789918B1 (en) | Input matching circuit for ultra-wideband low noise amplifier | |
| CN109525203B (en) | Intermediate frequency amplifier based on GaAs pHEMT process | |
| Ledezma | Doherty power amplifier with lumped non-foster impedance inverter | |
| CN114362690A (en) | High-linearity ultra-wideband amplifier | |
| CN110120789A (en) | A kind of broadband matching circuit structure with limitation of high harmonics | |
| CN206686145U (en) | A kind of novel efficient is against F power-like amplifier multiple harmonic match circuits | |
| CN109391236A (en) | A kind of signal amplification circuit and millimeter-wave signal amplifying circuit | |
| CN113098403A (en) | Ultra-wideband low-current drive amplifier based on GaAs pHEMT process | |
| CN216649630U (en) | Power amplifier and radio frequency chip | |
| CN110086441A (en) | Power amplifier | |
| CN109167605A (en) | RF front end structure and mobile terminal | |
| CN213243930U (en) | High-performance millimeter wave low-noise single-stage amplifier | |
| CN209201018U (en) | A kind of millimetre-wave circuit structure | |
| KR101910896B1 (en) | Broadband doherty power amplifier using a resonant circuit for the output matching circuit of the picking amplifier | |
| CN102931922A (en) | High-stability radio power amplifier monolithic integrated circuit | |
| CN207283507U (en) | A kind of radio-frequency power amplifier output circuit with gain-adjusted | |
| CN204633720U (en) | A kind of signal for bus location amplifies biasing circuit | |
| KR101054899B1 (en) | Frequency Variable E-Class Amplifier Circuit |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20190816 |
|
| RJ01 | Rejection of invention patent application after publication |