CN109167605A - RF front end structure and mobile terminal - Google Patents

RF front end structure and mobile terminal Download PDF

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Publication number
CN109167605A
CN109167605A CN201811347527.6A CN201811347527A CN109167605A CN 109167605 A CN109167605 A CN 109167605A CN 201811347527 A CN201811347527 A CN 201811347527A CN 109167605 A CN109167605 A CN 109167605A
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CN
China
Prior art keywords
filter
radio
impedance
power amplifier
frequency power
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201811347527.6A
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Chinese (zh)
Inventor
宣凯
龙华
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lansus Technologies Inc
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Lansus Technologies Inc
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Filing date
Publication date
Application filed by Lansus Technologies Inc filed Critical Lansus Technologies Inc
Priority to CN201811347527.6A priority Critical patent/CN109167605A/en
Publication of CN109167605A publication Critical patent/CN109167605A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B1/0458Arrangements for matching and coupling between power amplifier and antenna or between amplifying stages
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04MTELEPHONIC COMMUNICATION
    • H04M1/00Substation equipment, e.g. for use by subscribers
    • H04M1/02Constructional features of telephone sets
    • H04M1/0202Portable telephone sets, e.g. cordless phones, mobile phones or bar type handsets
    • H04M1/026Details of the structure or mounting of specific components
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/02Transmitters
    • H04B1/04Circuits
    • H04B2001/0408Circuits with power amplifiers

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  • Engineering & Computer Science (AREA)
  • Signal Processing (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Amplifiers (AREA)

Abstract

The present invention provides a kind of RF front end structure and mobile terminal.The RF front end structure includes: radio-frequency power amplifier, realizes the power amplification of radiofrequency signal;Filter is connected with the collector of radio-frequency power amplifier, and input impedance is directly transformed to the impedance to match with the load impedance of the radio-frequency power amplifier, is filtered to the radiofrequency signal of amplification;Matching network connects the filter, carries out matching convergence to the input impedance of the filter;RF switch, one end connect the filter by the matching network, and the other end connects antenna, filtered radio signal transmission is emitted to the antenna.RF front end structure provided by the invention not only eliminates the Insertion Loss of extra impedance converting network generation, decreases matching component, while reducing cost, also it can reduce package dimension, be killing three birds with one stone, meet the following mobile terminal low cost, the application demand of small size.

Description

RF front end structure and mobile terminal
Technical field
The present invention relates to radio-frequency power amplifier fields, and in particular to RF front end structure and mobile terminal.
Background technique
RF front-end circuit applied to terminal such as mobile phone generally includes radio-frequency power amplifier (RF PA), radio frequency is opened Close (RF Switch) and filter.Filter be filter (Filter) or duplexer (Duplexer),
It is that radio-frequency power amplifier and RF switch are integrated in inside a radio-frequency module inside traditional framework, filtering Device is individually located among radio-frequency power amplifier and antenna.Inside this traditional framework, radio-frequency module and filtering dress Setting all is as individual discrete device, and the impedance of input/output port is all by matching internal to 50 ohm.
With the fast development of communication terminal, RF front-end module is also toward small size, inexpensive direction evolution.Radio-frequency module Integrated with filter is increasingly becoming market mainstream direction.The big collection of radio-frequency power amplifier, RF switch and filter It comes into being at module, in the industry referred to as PAMiD (Power Amplifier Module integrated Duplexer).It is this kind of Product integrated level is higher, and rear end Insertion Loss is smaller, and performance is more preferable, and cost is lower, also reduces the match complexity of Client handset plate.
Although similar product currently on the market still uses inventors have found that PAMiD product has many advantages 50 ohm of interface impedances as radio-frequency module and filter, i.e. filter are transformed into 50 ohm by matching network, so Radio-frequency module passes through the load impedance (3~4 ohm) that a matching network is transformed into radio-frequency module transistor from 50 ohm again afterwards. It is this that additional component cost and back end signal path Insertion Loss will increase by 50 ohm of technologies as bridge joint.
Summary of the invention
In view of the above-mentioned problems, the embodiment of the present invention is quasi- to provide a kind of new RF front end structure and mobile terminal, without The transformation of 50 ohmages is crossed as bridge joint, directly by the input impedance conversion of filter to radio-frequency power amplifier work when institute The Low ESR needed, i.e., 3~4 ohm.
The embodiment of the invention provides a kind of RF front end structures, comprising: radio-frequency power amplifier realizes radiofrequency signal Power amplification;Filter is connected with the collector of radio-frequency power amplifier, and input impedance is directly transformed to penetrate with described The impedance that the load impedance of frequency power amplifier matches is filtered the radiofrequency signal of amplification;Matching network, described in connection Filter carries out matching convergence to the input impedance of the filter;RF switch, one end are connected by the matching network The filter is connect, the other end connects antenna, filtered radio signal transmission is emitted to the antenna.
The embodiment of the present invention also provides a kind of mobile terminal, including a kind of RF front end structure described above.
The RF front end structure that the embodiment of the present invention provides not only eliminates inserting for extra impedance converting network generation Damage, decreases matching component, while reducing cost, also can reduce package dimension, be killing three birds with one stone, meet future Terminal low cost, the application demand of small size.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other Attached drawing.
Fig. 1 is a kind of composition schematic diagram of traditional RF front end structure;
Fig. 2 is a kind of RF front end structure composition schematic diagram that one embodiment of the invention provides;
Fig. 3 is a kind of mobile terminal composition schematic diagram that one embodiment of the invention provides.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below with reference to drawings and examples, The specific embodiment progress of technical solution of the present invention in further detail, is clearly illustrated.However, specific implementations described below Mode and embodiment are for illustrative purposes only, rather than limiting the invention.It only contains a part of the invention and implements Example, instead of all the embodiments, the other embodiments that those skilled in the art obtain various change of the invention all belong to In the scope of protection of the invention.
Although it should be understood that the first, second, third, etc. term can be used in this article be used to describe various elements or Component, but these elements or component should not be limited by these terms.These terms only to distinguish an element or component with Another element or component.Therefore, the first element or component of following the discussion, holds within the present invention not departing from, is referred to alternatively as Second element or the second component.
Fig. 1 is a kind of composition schematic diagram of traditional RF front end structure.As shown in Figure 1, traditional RF front end structure Including radio-frequency power amplifier 11, filter 12, RF switch 13, the first matching network 14, the second matching network 15, third Distribution network 16.
11 transistor will pass through three matching networks from antenna to radio-frequency power amplifier.First matching network 14 is general For the parasitic capacitance inside resonance filter 12, so that the input impedance Z1 of filter 12 seems more on Smith chart It adds and holds back, the impedance in entire working frequency range is more concentrated, and high, normal, basic channel performance is consistent.Second matching network 15 is used for impedance The input impedance Z1 of filter 12, is transformed to the impedance position Z2 of needs by transformation, and usually 50 ohm herein.Third matching 50 ohm of impedances nearby are transformed to the load impedance Z3 of transistor by network 16 via RF switch 13, are usually put in mobile phone power The application scenarios of big device, Z3 generally in 4 ohms, the impedance by radio-frequency power amplifier 11 operating voltage and output power It determines or load balance factor (loadpull) determines.
Fig. 2 is a kind of RF front end structure composition schematic diagram that one embodiment of the invention provides.As shown in Fig. 2, before radio frequency End-rack structure includes radio-frequency power amplifier 21, filter 22, RF switch 23, matching network 24.
The power amplification of the realization radiofrequency signal of radio-frequency power amplifier 21.Filter 22 and radio-frequency power amplifier 21 Collector is connected, and input impedance is directly transformed to the impedance to match with the load impedance of radio-frequency power amplifier 21, right The radiofrequency signal of amplification is filtered.Matching network 24 connects filter 22, the input impedance progress to filter 22 With convergence.One end of RF switch 23 connects filter 22 by matching network 24, and the other end connects antenna, will be filtered Radio signal transmission is emitted to antenna.
RF front end structure further includes controller, and controller controls the opening and closing of RF switch 23.
Radio-frequency power amplifier 21 includes power discharging transistor, and base stage receives radiofrequency signal, and emitter connects power ground, Collector connects filter 22.The load impedance of radio-frequency power amplifier 21 is 3-4 ohm.
RF switch 23 includes but is not limited to single pole multiple throw, the switching for transmission channel.
Filter 22 includes but is not limited to filter or duplexer.Filter 22 includes filter circuit, resonant transformation Network.Filter circuit is filtered the radiofrequency signal of amplification.Resonant transformation network is directly transformed to input impedance and radio frequency The impedance that the load impedance of power amplifier 21 matches.Input impedance is 3-4 ohm.
When filter 22 is duplexer, duplexer is equivalent to two filters, and two one, filter can be set to Emission filter is applied in transmitting path.Another can be set to receiving filter, apply in receiving path.
The internal parasitic capacitances of 24 resonator, filter device of matching network, so that the input impedance Z1 of filter 22 is close in history Seem more to restrain on this circle diagram.Matching network 24 is real using 22 internal parasitic capacitances of filter and integrated spiral inductance It is existing, the input impedance of filter 22 is directly matched to required position.
The radio-frequency front-end PAMiD framework of invention is optimized by input impedance to filter internal, eliminates the The resonant transformation network that filter internal integrates is passed through in two matching networks and third matching network, the input impedance of filter, directly It connects and impedance is converted into Z3, i.e., close to 4 ohmage positions needed for radio-frequency power amplifier work, evaded conventional front-end frame Filter is first matched to 50 ohm by structure, then transforms to 50 ohm again by the output matching of the rear end PA 4 ohm of complicated mistake Journey.On the one hand reduce the two matching network bring Insertion Loss (about 1.2dB), on the other hand eliminate Surface Mount Component (SMD) or the matching cost of filter and brought packaging cost, while the reduction for matching material also brings encapsulation The diminution of size meets future terminal low cost, the application demand of small size.
Fig. 3 is a kind of mobile terminal composition schematic diagram that one embodiment of the invention provides.
A kind of mobile terminal 2 includes RF front end structure shown in Fig. 2.
This mobile terminal integrated level is higher, and performance is more preferable, and cost is lower.
It should be noted that each embodiment above by reference to described in attached drawing is only to illustrate the present invention rather than limits this The range of invention, those skilled in the art should understand that, it is right under the premise without departing from the spirit and scope of the present invention The modification or equivalent replacement that the present invention carries out, should all cover within the scope of the present invention.In addition, signified unless the context Outside, the word occurred in the singular includes plural form, and vice versa.In addition, unless stated otherwise, then any embodiment All or part of in combination with any other embodiment all or part of come using.

Claims (10)

1. a kind of RF front end structure, comprising:
Radio-frequency power amplifier realizes the power amplification of radiofrequency signal;
Filter is connected with the collector of radio-frequency power amplifier, and input impedance is directly transformed to and the radio frequency function The impedance that the load impedance of rate amplifier matches is filtered the radiofrequency signal of amplification;
Matching network connects the filter, carries out matching convergence to the input impedance of the filter;
RF switch, one end connect the filter by the matching network, and the other end connects antenna, penetrates filtered Frequency signal is transferred to the antenna and is emitted.
2. framework according to claim 1, wherein further include:
Controller controls the opening and closing of the RF switch.
3. framework according to claim 1, wherein the radio-frequency power amplifier includes:
Power discharging transistor, base stage receive radiofrequency signal, and emitter connects power ground, and the collector connects the filtering dress It sets.
4. framework according to claim 1, wherein the load impedance of the radio-frequency power amplifier is 3-4 ohm.
5. framework according to claim 1, wherein the filter includes filter or duplexer.
6. framework according to claim 1, wherein the filter includes:
Filter circuit is filtered the radiofrequency signal of amplification;
The input impedance is directly transformed to match with the load impedance of the radio-frequency power amplifier by resonant transformation network Impedance.
7. framework according to claim 1, wherein the input impedance is 3-4 ohm.
8. framework according to claim 1, wherein the endophyte electricity of filter described in the matching network resonance Hold.
9. framework according to claim 1, wherein the RF switch includes single pole multiple throw.
10. a kind of mobile terminal, including a kind of described in any item RF front end structures of the claim 1 to 9.
CN201811347527.6A 2018-11-13 2018-11-13 RF front end structure and mobile terminal Pending CN109167605A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811347527.6A CN109167605A (en) 2018-11-13 2018-11-13 RF front end structure and mobile terminal

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Application Number Priority Date Filing Date Title
CN201811347527.6A CN109167605A (en) 2018-11-13 2018-11-13 RF front end structure and mobile terminal

Publications (1)

Publication Number Publication Date
CN109167605A true CN109167605A (en) 2019-01-08

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022022439A1 (en) * 2020-07-31 2022-02-03 诺思(天津)微系统有限责任公司 Radio frequency module design method, radio frequency module, and communication device
CN114928939A (en) * 2022-05-12 2022-08-19 成都频岢微电子有限公司 Radio frequency front end chip matching network structure

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007274247A (en) * 2006-03-30 2007-10-18 Kyocera Corp Wireless communication circuit device and wireless communication system
US20120208473A1 (en) * 2011-02-11 2012-08-16 Qualcomm Incorporated Front-end rf filters with embedded impedance transformation
WO2015017406A1 (en) * 2013-08-01 2015-02-05 Rf Micro Devices, Inc. Tunable rf filter structure having coupled resonators
US20170302250A1 (en) * 2015-10-06 2017-10-19 Resonant Inc. Radio frequency transmit filter with integrated impedance matching network
CN108011600A (en) * 2017-09-08 2018-05-08 牛旭 A kind of restructural radio frequency and microwave power amplifier
CN208939929U (en) * 2018-11-13 2019-06-04 深圳飞骧科技有限公司 RF front end structure and mobile terminal

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007274247A (en) * 2006-03-30 2007-10-18 Kyocera Corp Wireless communication circuit device and wireless communication system
US20120208473A1 (en) * 2011-02-11 2012-08-16 Qualcomm Incorporated Front-end rf filters with embedded impedance transformation
CN103380573A (en) * 2011-02-11 2013-10-30 高通股份有限公司 Front-end RF filters with embedded impedance transformation
WO2015017406A1 (en) * 2013-08-01 2015-02-05 Rf Micro Devices, Inc. Tunable rf filter structure having coupled resonators
US20170302250A1 (en) * 2015-10-06 2017-10-19 Resonant Inc. Radio frequency transmit filter with integrated impedance matching network
CN108011600A (en) * 2017-09-08 2018-05-08 牛旭 A kind of restructural radio frequency and microwave power amplifier
CN208939929U (en) * 2018-11-13 2019-06-04 深圳飞骧科技有限公司 RF front end structure and mobile terminal

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022022439A1 (en) * 2020-07-31 2022-02-03 诺思(天津)微系统有限责任公司 Radio frequency module design method, radio frequency module, and communication device
CN114928939A (en) * 2022-05-12 2022-08-19 成都频岢微电子有限公司 Radio frequency front end chip matching network structure

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Address after: 518000 1601, building 1, shuimuyifang building, No. 286, Nanguang Road, dawangshan community, Nantou street, Nanshan District, Shenzhen, Guangdong

Applicant after: Shenzhen Feiyu Technology Co.,Ltd.

Address before: 518057 318, 3F, building B, Guoren building, kejizhong Third Road, Science Park, Yuehai street, Nanshan District, Shenzhen City, Guangdong Province

Applicant before: LANSUS TECHNOLOGIES Inc.