CN108683434B - On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method - Google Patents
On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method Download PDFInfo
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- CN108683434B CN108683434B CN201810992425.3A CN201810992425A CN108683434B CN 108683434 B CN108683434 B CN 108683434B CN 201810992425 A CN201810992425 A CN 201810992425A CN 108683434 B CN108683434 B CN 108683434B
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
Abstract
The present invention provides a kind of integrated transmitting-receiving matching network of on piece suitable for permanent envelope non-linear modulation and methods, chip is in reception state, first switching closes the switch, the transmitting terminal TX of on piece transmit circuit is set not have signal communication between the port of piece outside antenna, and second switches switch OFF, the signal of antenna port is able to send on piece the receiving end RX for receiving circuit by antenna matching network, on-chip transformer；In emission state, the first switching switch OFF makes the signal of transmitting terminal TX be sent to antenna port by exporting bandpass filtering network, and the second switching closes the switch, and on-chip transformer is made to be in the state that short circuit is connected to GND.The present invention can be designed in integrated circuit silicon on piece and be realized; piece is outer in addition to antenna is without additional matching device; the a large amount of higher harmonic components generated when the transmitting of permanent envelope non-linear modulation signal can be filtered out; it is provided in input and the band logical of required frequency range is selected, also form the static electric charge discharge prevention to antenna component end using on-chip inductor.
Description
Technical field
The present invention relates to a kind of RF IC on piece match circuits, and it is logical to be especially applicable in constant-envelope, non-linear modulation
The on-chip antenna match circuit of letter mode.
Background technique
The match circuit of existing radio circuit antenna often utilizes the outer component (capacitor, inductance etc.) of piece in printed circuit
It is realized on plate (PCB), the design of precision and PCB to the impedance of component is proposed higher requirement, also increases BOM
(bill of materials) cost.Also it has tried to matching network be accomplished on piece, but the high order that can not effective filter out transmitting signal is humorous
Wave can generate interference to other communications bands.
With the development of integrated circuit, more and more circuits and peripheral components are integrated on silicon wafer, are especially worn intelligently
It wears and the application field of low-power consumption internet of things equipment, very high requirement more is proposed to the integrated level of chip.Antenna match net
Network, and or the inductive transformer realized of the BALUN(on piece that needs, converted for single-ended, both-end, impedance transformation etc., abbreviation on piece
Transformer), transceiver toggle switch (SWITCH) be integrated on piece, not only reduce difficulty of matching when Application of integrated circuit, increase
Add the stability of work, and considerably reduced the quantity and volume of component on printed circuit board, sufficiently meets intelligence
The demand of energy wearable device and low-power consumption internet of things equipment, has great technical meaning and market value.
In low-power consumption Internet of Things and intelligent wearable device, commonly using a kind of communication modulation mode is the non-linear tune of permanent envelope
System has if Gaussian frequency shift moves keying (Gauss Frequency Shift Keying, GFSK) and realizes difficulty to transmitting link
Low, low in energy consumption feature, therefore is widely adopted.But also due to non-linear modulation, often output spectrum contains very strong high order
Harmonic component can generate serious interference to other frequency range, it is necessary to which communication compatibility specification can just be met by being filtered out.Lack at present
One kind under constant-envelope, non-linear modulation communication mode, can effectively filter out the on-chip antenna matching electricity of higher harmonic components
Road.
Summary of the invention
For above situation, the present invention provides a kind of on piece integrated circuits suitable for the communication of permanent envelope non-linear modulation
Matching network and method are received and dispatched, can design and realize in integrated circuit silicon on piece, without matching device outside additional piece, and can
The a large amount of higher harmonic components generated when the transmitting of permanent envelope non-linear modulation signal are greatly filtered out, while in input, output
The band logical selection to required frequency range is provided, is also formd using on-chip inductor natural to the electric discharge of antenna component end static electric charge
Protection.
In order to achieve the above object, a technical solution of the invention is to provide a kind of suitable for permanent envelope non-linear modulation
On piece integrated circuit receive and dispatch matching network, it includes the inductance L1 of: on piece, inductance L2, capacitor C1, capacitor C2, capacitor C3,
Switch S1, the on-chip transformer of NMOS tube；Piece is externally provided with antenna；
One end transmitting terminal TX connection inductance L2 of on piece transmit circuit output, the other end of inductance L2 is in node B connection
The drain terminal of switch S1 and a pole plate of capacitor C2, the source that switch closes S1 are connected to GND, and switch S1 is by accessing its grid
Reception enable signal RXEN control；
One end of another pole plate of capacitor C2, a pole plate and inductance L1 of capacitor C1, is all connected to the port of antenna；
Another pole plate of capacitor C1 is connected to GND；
Primary coil input terminal of the other end of inductance L1 in node A connection on-chip transformer, the other end of primary coil
It is connected to GND with a pole plate of capacitor C3, another pole plate of capacitor C3 is connected to node A；The secondary wire of on-chip transformer
The receiving end RX for receiving circuit on piece is enclosed to connect.
Optionally, chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna in reception state
Port is connected to the primary coil of on-chip transformer through inductance L1, and then is connected to GND；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, passes through from antenna port in emission state
Inductance L1 is connected to GND.
Optionally, by the connection structure of the inductance L1 other end, capacitor C1 another pole plate, replacement are as follows:
The other end of inductance L1 is connected to GND, and another pole plate of capacitor C1 is in the first of node A connection on-chip transformer
Grade coil input end；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, passes through from antenna port in reception state
Inductance L1 is connected to GND, and is connected to GND from antenna port through the primary coil of on-chip transformer；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, passes through from antenna port in emission state
Inductance L1 is connected to GND.
Optionally, for chip operation in reception state, transmitting terminal TX does not have output signal, and receiving enable signal RXEN is height
Level, the switch S1 that inductance L2 is connected by source-drain electrode are connected to GND；The signal of antenna passes through inductance L1, capacitor C1, capacitor
The input matching network that C2, capacitor C3 and on-chip transformer are formed enters on piece and receives circuit；
For chip operation in emission state, on-chip transformer is in the state that short circuit is connected to GND；Inductance L1 and capacitor C1
Form resonant cavity；Reception enable signal RXEN is low level, and switch S1 is turned off, and inductance L2 and capacitor C2 form the band of required frequency range
Pass filter structure；The knot that the signal of transmitting terminal TX output is formed by inductance L2, inductance L1, capacitor C1, capacitor C2 and capacitor C5
Structure is matched to antenna port, and wherein capacitor C5 is the parasitic capacitance that GND is arrived in its drain electrode when switch S1 is turned off.
Optionally, by the connection structure of capacitor C2 another pole plate, two the inductance L1 other end, capacitor C3 pole plates, replacement
Are as follows:
Another pole plate of capacitor C2 and the other end of inductance L1, a pole plate in node C connection capacitor C3；Capacitor
Primary coil input terminal of another pole plate of C3 in node A connection on-chip transformer；
Chip operation is respectively formed with the Electro-static Driven Comb path of complete direct current connection in reception state or emission state,
It is connected to inductance L1 from antenna port, and then is connected to GND.
Optionally, for chip operation in reception state, transmitting terminal TX does not have output signal, and receiving enable signal RXEN is height
Level, the switch S1 that inductance L2 is connected by source-drain electrode are connected to GND；Inductance L1, capacitor C1, capacitor C2 form input π type
Distribution network, the signal of antenna enter on piece by the on piece input port that capacitor C3 and on-chip transformer are formed and receive circuit；
For chip operation in emission state, on-chip transformer is in the state that short circuit is connected to GND；Receive enable signal
RXEN is low level, switch S1 shutdown, and inductance L2 and capacitor C2 form the bandpass filtering structure of required frequency range；Capacitor C3 is in node
The pole plate of this side A is in the state for being connected to GND, and capacitor C3 and inductance L1, capacitor C1 is made to form the transmitting π type of required frequency range
Matching network；The structure that the signal of transmitting terminal TX output is formed by inductance L2, inductance L1, capacitor C1, capacitor C2 and capacitor C3
It is matched to antenna port.
Optionally, on piece integrated circuit transmitting-receiving matching network is further provided with the switch S2 of NMOS tube, makes switch S2's
Drain terminal is connected to node A, and the source of switch S2 is connected to GND, the transmitting enable signal TXEN that switch S2 passes through its grid of access
To control；
Alternatively, chip operation, in emission state, the secondary coil of on-chip transformer, which can be realized, is shorted to ground, then not
The switch S2 is set.
Optionally, for chip operation in reception state, transmitting enable signal TXEN is zero level, switch S2 shutdown, node A
Its drain terminal is connected to GND to the parasitic capacitance C4 that GND is formed when turning off via switch S2；
For chip operation in emission state, transmitting enable signal TXEN is high level, and the source-drain electrode of switch S2 is connected, node
A is connected to GND via switch S2.
Optionally, described to be connected to GND, expression is connected to ground, or is connected to the negative terminal of chip radio frequency input/output port, or
It is connected to the negative terminal of antenna.
Another technical solution of the invention is to provide a kind of on piece integrated circuit suitable for permanent envelope non-linear modulation
Matching process is received and dispatched, receives and dispatches pair net using the on piece integrated circuit that any one of the above is suitable for permanent envelope non-linear modulation
Network；
Wherein, it is realized with integrated circuit technology, in the transmission circuit using permanent envelope non-linear modulation communication mode, piece
The transmitting terminal TX of upper transmit circuit is connected to the network the port of piece outside antenna by output bandpass filtering；The output bandpass filtering net
Network is equipped with the first switching switch that may be connected to GND；
The receiving end RX that on piece receives circuit connects antenna matching network by on-chip transformer；The antenna matching network
The port of connection sheet outside antenna, and it is equipped with the second switching switch that may be connected to GND；
In reception state, first switching closes the switch chip operation, does not have transmitting terminal TX between antenna port
There is signal communication, and the second switching switch OFF, the signal of antenna port are sent by antenna matching network, on-chip transformer
To receiving end RX；
For chip operation in emission state, the first switching switch OFF makes the signal of transmitting terminal TX pass through output band
Pass filter network is sent to antenna port, and second switching closes the switch, and so that on-chip transformer is in short circuit and is connected to GND's
State.
Present invention discloses one kind to be suitable for integrated circuit technology (CMOS, GaAs, SOI etc.) realization, for constant packet
The transmission circuit on piece matching network of network non-linear modulation communication mode (BPSK, GFSK, GMSK etc.), contain transmit-receive switch,
On-chip transformer (BALUN) and matching element.It designs with not only can be convenient and realizes in integrated circuit silicon on piece, but also be not necessarily to
Device is matched outside additional sheet, and can greatly filter out a large amount of higher hamonic waves generated when the transmitting of permanent envelope non-linear modulation signal
Component, while being provided in input, output and the band logical of required frequency range is selected, natural pair is also formd using on-chip inductor
Antenna component end static electric charge electric discharge (Electro-Static Discharge, ESD) protection.
The matching network of existing major part radio circuit is realized in non-integrated circuit outside piece, and common
Matching network, conversion, matching just to complete for the impedance in the impedance to antenna of circuit, so that the transmitting-receiving of circuit is in power
It is best in transmission performance.
The features of the present invention, first be on piece realize (by CMOS tube sub switch, can on piece capacitor, the inductance structure realized
At), second is that can not only complete the conversion and matching of impedance, but also can realize and emit on piece for non-linear modulation communication
Signal higher hamonic wave filters out network, and third is to realize electrostatic protection function simultaneously.
Because of constant-envelope, non-linear debud mode, have the characteristics that efficiency of transmission is high, is used in more and more each
In kind of communication modulation mode, but a disadvantage of this mode is exactly to emit the frequency spectrum of signal to generate in a large amount of non-channel
Higher hamonic wave, interference is generated to adjacent channel even other communications band.The present invention is in particular for this communication mode
Disadvantage is optimized, and except on piece designing impedance matching, also specially bandpass filtering network is exported plus on piece, thus this kind
The distinctive higher hamonic wave of modulation system filters out, and is limited in emission spectrum in oneself specific frequency range, to save the filter outside piece
Wave network, while accomplishing the matching of impedance.If not applying under nonlinear modulation system, then the signal itself of transmitting terminal
Frequency spectrum less generate higher hamonic wave, the output bandpass filtering network of transmitting terminal can not need.
For the present invention to the BPSK for also belonging to constant-envelope, non-linear modulation communication, the modes such as GFSK, GMSK can basis
Circuit itself works the difference of optimal impedance, the power requirement of transmission and channel bands etc., specific embodiment later
In, adapt to the size of adjustment such as pipe, bias voltage and switching voltage, the complexity of capacitor, the parameter value of inductance and network
It also can be different.
In order to embody ESD protection, in the numerous embodiments that disclose of the present invention, in addition to piece outside antenna ANT is other than piece,
Remaining circuit is all that on piece is realized, and the port of piece outside antenna ANT is the pin that a chip needs electrostatic protection；Chip draws
Foot must have certain electrostatic protection ability, otherwise can be broken by electrostatic, lead to pin failure, be not available.Either emit
State or reception state, the road that the complete direct current that the present invention always has a port from piece outside antenna ANT to the ground GND is connected to
Diameter always has the access of a static discharge that can go on the Electro-static Driven Comb to GND the port of piece outside antenna ANT.
Detailed description of the invention
Fig. 1 is the topological structure schematic diagram of on piece matching network of the present invention；
Fig. 2 is the structural schematic diagram of on piece matching network of the present invention in the first embodiment；
Fig. 3 is schematic illustration of the chip operation in reception state in first embodiment；
Fig. 4 is schematic illustration of the chip operation in emission state in first embodiment；
Fig. 5 is the structural schematic diagram of on piece matching network of the present invention in a second embodiment；
Fig. 6 is schematic illustration of the chip operation in reception state in second embodiment；
Fig. 7 is schematic illustration of the chip operation in emission state in second embodiment；
Fig. 8 is the structural schematic diagram of on piece matching network of the present invention in the third embodiment；
Fig. 9 is schematic illustration of the chip operation in reception state in 3rd embodiment；
Figure 10 is schematic illustration of the chip operation in emission state in 3rd embodiment.
Specific embodiment
As shown in Figure 1, the present invention provides a kind of novel on piece matching network, topological structure includes: output band logical filter
Wave network, antenna matching network, on-chip transformer B1, switch S1 and switch S2.Piece outside antenna ANT in figure is integrated circuit chip
Outer element, other is that on piece is realized.
Fig. 2 shows the first embodiments of on piece matching network of the present invention:
The other end of one end inductance L2 in integrated circuit in the output connection sheet of transmitting terminal TX, inductance L2 connects in node B
The drain terminal of the switch S1 of NMOS tube and a pole plate of the capacitor C2 of on piece are connect, the source of switch S1 connects GND, and grid is logical
Reception enable signal RXEN is crossed to control.A pole plate of the capacitor C1 of another pole plate and on piece of capacitor C2 connects together,
It is connected to piece outside antenna ANT, and one end of the inductance L1 in connection sheet；Another pole plate of capacitor C1 connects GND.
The other end of inductance L1 is in the primary coil input terminal of node A connection on-chip transformer B1 and the switch of NMOS tube
The drain terminal of S2, the other end of the primary coil of on-chip transformer B1 connect GND, and on-chip transformer B1 is simultaneously and capacitor C3 is in parallel.
The source of the switch S2 of NMOS tube connects GND, grid connection transmitting enable signal TXEN.The secondary coil of on-chip transformer B1
Connect receiving end RX.Here, without exception with GND is connected, to represent the negative terminal or antenna that are connected to ground, chip radio frequency input/output port
Negative terminal three kinds of situations.
As shown in figure 3, transmitting terminal TX does not have output signal when chip operation is in reception state, reception might as well be set at this time
Enable signal RXEN is high level, switch S1 source-drain electrode is connected, so that this end segment that inductance L2 is connected with capacitor C2
Point B is conducting to GND, and transmitting terminal TX exports the inductive load for only seeing inductance L2, and capacitor C2 is physically incorporated into capacitor C1 and becomes
Receive matched a part；At this point, capacitor C1 and capacitor C2 are in parallel, the pole plate of their sides is connected to the end of piece outside antenna ANT
One end inductance L1 of mouth and on piece, the other side is connected respectively to GND and is connected to GND by switch S1.
When receiving, transmitting enable signal TXEN might as well be set as zero level, switch S2 shutdown, when C4 is switch S2 shutdown its
Parasitic capacitance of the drain terminal to GND.The signal of piece outside antenna ANT can only pass through inductance L1, capacitor C1, capacitor C2, capacitor C3, parasitism
The ∏ type matching network that capacitor C4 and on-chip transformer B1 is constituted enters on piece and receives circuit, and transmitting terminal TX is due to inductance L2
It is connected to GND, therefore can enter the port of piece outside antenna ANT without signal.
As shown in figure 4, transmitting enable signal TXEN might as well be set as high level in transmitting, switch S2 is connected, inductance L1's
Node A is connected to GND via switch S2, while the two sides of on-chip transformer B1 primary coil and capacitor C3 are connected respectively to GND
It is connected to GND with via the switch S2 of conducting, inductance L1 and capacitor C1 forms parallel resonance chamber at this time；And on the grid of switch S1
RXEN might as well be set as zero level, switch S1 shutdown, what transmitting terminal TX signal was connect via inductance L2 and with inductance L2 in node B
Capacitor C2 leads to the port of piece outside antenna ANT, and wherein capacitor C5 is the parasitic capacitance that GND is arrived in its drain electrode when switch S1 is turned off.
When transmitting, transmitting terminal TX signal is output to outside piece by inductance L2, inductance L1, capacitor C1, capacitor C2 and capacitor C5
The port of antenna ANT, and receive on-chip transformer B1 and be in short circuit and be connected to GND state, it can not receive from piece outside antenna ANT's
Signal.The connection status of inductance L2 and capacitor C2 forms the band-pass filtering property in required frequency range when due to transmitting, can be with
Effectively eliminate the higher harmonic components of output signal；The resonant cavity that inductance L1 and capacitor C1 is formed simultaneously can be further improved
Output impedance in required frequency range, further improves output signal-to-noise ratio.If when transmitting, the on-chip transformer of on piece receiving portion
B1 secondary coil can be realized be shorted to ground if, switch S2 can also not had to and realize function when transmitting, because of on piece change
The characteristic of depressor B1 can guarantee the function of reaching and have switch S2 to realize.Therefore, switch S2 is mentioned with dotted line frame in above-mentioned Fig. 2
Show.
Fig. 5 shows second of embodiment of on piece matching network of the present invention, the main distinction with first embodiment
Be: inductance L1 and capacitor C1 have exchanged position.
The output end (transmitting terminal TX) of transmit circuit is connected to the one end inductance L2, and the other end of inductance L2 is in node B connection
A pole plate of capacitor C2, while node B is also connect with the drain terminal of the switch S1 of NMOS tube, another pole plate connection of capacitor C2
To the port of piece outside antenna ANT, wherein the grid connection of switch S1 receives enable signal RXEN, control switch S1 closure or pass
Disconnected, the source electrode of switch S1 is connected to GND(here, indicating to be connected to ground, chip radio frequency input/output port with being connected to GND without exception
Negative terminal or the negative terminal of antenna these three situations).
The port of piece outside antenna ANT has been also respectively connected with one end of inductance L1 and a pole plate of capacitor C1, inductance L1's
The other end is connected to GND, and another pole plate of capacitor C1 is connected to node A, and inputs with the primary coil of on-chip transformer B1
End is connected, and node A is also connected with the drain terminal of the switch S2 of NMOS tube and a pole plate of capacitor C3, and on-chip transformer B1 input is just
The other end of grade coil is connected with the other end of capacitor C3 and is connected to GND, and the connection of the grid of switch S2 emits enable signal
TXEN, with the closure or shutdown of control switch S2, the source electrode of switch S2 is connected to GND.
As shown in fig. 6, when receiving, TXEN might as well be set as zero level and RXEN is high level, switch S1 in this way, which is closed, to be made
Node B is connected to GND via switch S1, and at this time turns off switch S2.Transmitting terminal TX is exported without signal at this time, while via
Inductance L2 is connected to GND, can not reach the port of piece outside antenna ANT.Inductance L1 and capacitor C1, capacitor C2 parallel connection form the outer day of piece
The input matching network of line ANT, it is defeated that the signal of piece outside antenna ANT is sent into the on piece that on-chip transformer B1 and capacitor C3 is formed simultaneously
Inbound port, when C4 is switch S2 shutdown, the parasitic capacitance of the opposite GND of switch S2 drain electrode.
As shown in fig. 7, in transmitting, TXEN might as well be set as high level and RXEN is low level, switch S2 in this way, which is closed, to be made
Node A is connected to GND via switch S2, and at this time turns off switch S1.Since switch S2 closure makes node A be shorted to GND, because
This on-chip transformer B1 and capacitor C3 is practical does not work, and the side pole plate of capacitor C1 is connected to GND, and electricity via switch S2
Sense L1 forms the resonant cavity of required frequency range, improves the load impedance of transmitting, increases transmitting signal-to-noise ratio.At this point, piece outside antenna ANT
Port also passes through capacitor C2 and inductance L2 is connected to transmitting terminal TX, and the transmitting signal at TX is arrived via structure matching shown in Fig. 7
Piece outside antenna ANT has filtered out the higher harmonic components of permanent envelope non-linear modulation signal well.If on piece connects when transmitting
The on-chip transformer B1 secondary coil of receiving portions can be realized be shorted to ground if, can also not have to switch S2 come when realizing transmitting
Function because the characteristic of on-chip transformer B1 can guarantee reach have switch S2 realize function.Therefore, it is switched in above-mentioned Fig. 5
S2 is prompted with dotted line frame.
Fig. 8 shows the third embodiment of on piece matching network of the present invention, the main distinction with first embodiment
Be: a pole plate of capacitor C2 is not directly connected piece outside antenna ANT, but is connected with A point.
The output end (transmitting terminal TX) of transmit circuit is connected to inductance L2, and the other end of inductance L2 is in node B connection capacitor
A pole plate of C2, while node B is also connected with the drain terminal of the switch S1 of NMOS tube, another pole plate of capacitor C2 is connected to node
C, wherein the grid connection of switch S1 receives enable signal RXEN, control switch S1 closure or shutdown, the source electrode connection of switch S1
To GND(here, without exception be connected to GND indicate to be connected to ground, the negative terminal of chip radio frequency input/output port or antenna negative terminal this
Three kinds of situations).Node C is also connected with one end of inductance L1, and the other end of inductance L1 is connected and together with a pole plate of capacitor C1
It is connected to piece outside antenna ANT, another pole plate of capacitor C1 is connected to GND.Node C is also connected with a pole plate of capacitor C3, capacitor
One end phase of another pole plate of C3 in drain terminal and on-chip transformer B1 the input primary coil of the node A and switch S2 of NMOS tube
Even.The grid connection transmitting enable signal TXEN of switch S2, with the closure or shutdown of control switch S2, the source electrode of switch S2 is connected
To GND.
As shown in figure 9, when receiving, TXEN might as well be set as zero level and RXEN is high level, switch S1 in this way, which is closed, to be made
Node B is connected to GND via switch S1, and at this time turns off switch S2.Transmitting terminal TX is exported without signal at this time, while via
Inductance L2 is connected to GND, can not reach the port of piece outside antenna ANT.Inductance L1 and capacitor C1, capacitor C2 form piece outside antenna
The input π type matching network of ANT, the signal end of piece outside antenna ANT are sent into the piece that on-chip transformer B1 and capacitor C3 is formed simultaneously
Upper input port, when C4 is switch S2 shutdown, the parasitic capacitance of the opposite GND of switch S2 drain electrode.
As shown in Figure 10, in transmitting, TXEN might as well be set as high level and RXEN is low level, switch S2 in this way, which is closed, to be made
Node A is connected to GND via switch S2, and at this time turns off switch S1.Since switch S2 closure makes node A be shorted to GND, because
This on-chip transformer B1 is practical not to work, and the side pole plate of capacitor C3 is connected to GND and inductance L1, electricity via switch S2
Hold the transmitting π type matching network that C1 forms required frequency range.At this point, being also connected to TX output end, shape by capacitor C2 and inductance L2
At the bandpass filtering network in required frequency range, TX emits signal via structure matching as shown in Figure 10 to piece outside antenna ANT's
Port, has filtered out the higher harmonic components of permanent envelope non-linear modulation signal well, and provides enough power transmissions
With gain.If transmitting, the on-chip transformer B1 secondary coil of on piece receiving portion can be realized be shorted to ground if, can also
Function when transmitting is realized not have to switch S2, because the characteristic of on-chip transformer B1, which can guarantee to reach, switch S2 realization
Function.Therefore, switch S2 is prompted with dotted line frame in above-mentioned Fig. 8.
A kind of on piece integrated circuit suitable for the communication of permanent envelope non-linear modulation provided by the invention receives and dispatches matching network,
It can design and realize in integrated circuit silicon on piece, without matching device outside additional piece, and it is non-greatly to filter out permanent envelope
A large amount of higher harmonic components that linearly modulated signal generates when emitting, while providing in input, output to required frequency range
Band logical selection is also formd using on-chip inductor natural to antenna component end static electric charge electric discharge (ESD) protection.
Either emission state or reception state, in three kinds of specific implementations of the invention, always have one outside piece
The path that the complete direct current on the port of antenna ANT to the ground GND is connected to, i.e., always have the access of a static discharge can be day outside piece
It is gone on the Electro-static Driven Comb to GND of the port of line ANT, to realize to antenna component end static electric charge discharge prevention:
For example, in the corresponding first embodiment of Fig. 2, Fig. 3 and Fig. 4, in reception state, from the port of piece outside antenna ANT
The Electro-static Driven Comb path of beginning is primary coil of the piece outside antenna ANT to inductance L1 to on-chip transformer B1, then arrives GND；And it sends out
When penetrating state, from the port of piece outside antenna ANT to inductance L1, then GND is arrived.In the corresponding second embodiment of Fig. 5, Fig. 6 and Fig. 7,
In reception state, Electro-static Driven Comb path is from piece outside antenna ANT to inductance L1 and from piece outside antenna ANT to on-chip transformer
The primary coil of B1, then arrive GND；When emission state, Electro-static Driven Comb path is piece outside antenna ANT to inductance L1, then arrives GND.Figure
8, in the corresponding 3rd embodiment of Fig. 9 and Figure 10, no matter reception state or emission state, always have an Electro-static Driven Comb path be from
Piece outside antenna ANT is to inductance L1, then arrives GND.
It is discussed in detail although the contents of the present invention have passed through above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read above content, for of the invention
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (13)
1. a kind of on piece integrated circuit transmitting-receiving matching network suitable for permanent envelope non-linear modulation is, characterized by comprising: piece
On inductance L1, inductance L2, capacitor C1, capacitor C2, capacitor C3, NMOS tube switch S1, NMOS tube switch S2, on-chip transformer；
Piece is externally provided with antenna；
One end transmitting terminal TX connection inductance L2 of on piece transmit circuit output, the other end of inductance L2 is in node B connection switch
The drain terminal of S1 and a pole plate of capacitor C2, the source of switch S1 are connected to GND, the reception that switch S1 passes through its grid of access
Enable signal RXEN is controlled；
One end of another pole plate of capacitor C2, a pole plate and inductance L1 of capacitor C1, is all connected to the port of antenna；Capacitor
Another pole plate of C1 is connected to GND；
Primary coil input terminal of the other end of inductance L1 in node A connection on-chip transformer, the other end and electricity of primary coil
A pole plate for holding C3 is connected to GND, and another pole plate of capacitor C3 is connected to node A；The secondary coil of on-chip transformer with
The receiving end RX connection of on piece reception circuit；
The drain terminal of switch S2 is connected to node A, and the source of switch S2 is connected to GND, the transmitting that switch S2 passes through its grid of access
Enable signal TXEN is controlled.
2. on piece integrated circuit as described in claim 1 receives and dispatches matching network, which is characterized in that
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in reception state
L1 is connected to the primary coil of on-chip transformer, and then is connected to GND；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in emission state
L1 is connected to GND.
3. on piece integrated circuit as described in claim 1 receives and dispatches matching network, which is characterized in that
By the connection structure of the inductance L1 other end, capacitor C1 another pole plate, replacement are as follows:
The other end of inductance L1 is connected to GND, and another pole plate of capacitor C1 is in the primary line of node A connection on-chip transformer
Enclose input terminal；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in reception state
L1 is connected to GND, and is connected to GND from antenna port through the primary coil of on-chip transformer；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in emission state
L1 is connected to GND.
4. on piece integrated circuit as described in claim 1 receives and dispatches matching network, which is characterized in that
For chip operation in reception state, transmitting terminal TX does not have output signal, and reception enable signal RXEN is high level, inductance L2
GND is connected to by the switch S1 that source-drain electrode is connected；The signal of antenna by inductance L1, capacitor C1, capacitor C2, capacitor C3 and
The input matching network that on-chip transformer is formed enters on piece and receives circuit；
For chip operation in emission state, on-chip transformer is in the state that short circuit is connected to GND；Inductance L1 and capacitor C1 are formed
Resonant cavity；Reception enable signal RXEN is low level, switch S1 shutdown, and the band logical that inductance L2 and capacitor C2 form required frequency range is filtered
Wave structure；The structure that the signal of transmitting terminal TX output is formed by inductance L2, inductance L1, capacitor C1, capacitor C2 and capacitor C5
It is fitted on antenna port, wherein capacitor C5 is the parasitic capacitance that GND is arrived in its drain electrode when switch S1 is turned off.
5. on piece integrated circuit as claimed in claim 3 receives and dispatches matching network, which is characterized in that
For chip operation in reception state, transmitting terminal TX does not have output signal, and reception enable signal RXEN is high level, inductance L2
GND is connected to by the switch S1 that source-drain electrode is connected；The signal of antenna by inductance L1, capacitor C1, capacitor C2, capacitor C3 and
The input matching network that on-chip transformer is formed enters on piece and receives circuit；
For chip operation in emission state, on-chip transformer is in the state that short circuit is connected to GND；Inductance L1 and capacitor C1 are formed
Resonant cavity；Reception enable signal RXEN is low level, switch S1 shutdown, and the band logical that inductance L2 and capacitor C2 form required frequency range is filtered
Wave structure；The structure that the signal of transmitting terminal TX output is formed by inductance L2, inductance L1, capacitor C1, capacitor C2 and capacitor C5
It is fitted on antenna port, wherein capacitor C5 is the parasitic capacitance that GND is arrived in its drain electrode when switch S1 is turned off.
6. on piece integrated circuit as described in claim 1 receives and dispatches matching network, which is characterized in that
By the connection structure of capacitor C2 another pole plate, two the inductance L1 other end, capacitor C3 pole plates, replacement are as follows:
Another pole plate of capacitor C2 and the other end of inductance L1, a pole plate in node C connection capacitor C3；Capacitor C3's
Primary coil input terminal of another pole plate in node A connection on-chip transformer；
Chip operation is respectively formed with the Electro-static Driven Comb path of complete direct current connection in reception state or emission state, from
Antenna port is connected to inductance L1, and then is connected to GND.
7. on piece integrated circuit as claimed in claim 6 receives and dispatches matching network, which is characterized in that
For chip operation in reception state, transmitting terminal TX does not have output signal, and reception enable signal RXEN is high level, inductance L2
GND is connected to by the switch S1 that source-drain electrode is connected；Inductance L1, capacitor C1, capacitor C2 form input π type matching network, antenna
Signal on piece entered by the on piece input port that capacitor C3 and on-chip transformer are formed receive circuit；
For chip operation in emission state, on-chip transformer is in the state that short circuit is connected to GND；Receiving enable signal RXEN is
Low level, switch S1 shutdown, inductance L2 and capacitor C2 form the bandpass filtering structure of required frequency range；Capacitor C3 node A this
The pole plate of side is in the state for being connected to GND, and capacitor C3 and inductance L1, capacitor C1 is made to form the transmitting π type matching of required frequency range
Network；The structure matching that the signal of transmitting terminal TX output is formed by inductance L2, inductance L1, capacitor C1, capacitor C2 and capacitor C3
To antenna port.
8. on piece integrated circuit as described in claim 1 receives and dispatches matching network, which is characterized in that
For chip operation in reception state, transmitting enable signal TXEN is zero level, and switch S2 shutdown, node A is via switch S2
Its drain terminal is connected to GND to the parasitic capacitance C4 that GND is formed when shutdown；
For chip operation in emission state, transmitting enable signal TXEN is high level, and the source-drain electrode of switch S2 is connected, node A warp
GND is connected to by switch S2.
9. on piece integrated circuit as claimed in claim 3 receives and dispatches matching network, which is characterized in that
For chip operation in reception state, transmitting enable signal TXEN is zero level, and switch S2 shutdown, node A is via switch S2
Its drain terminal is connected to GND to the parasitic capacitance C4 that GND is formed when shutdown；
For chip operation in emission state, transmitting enable signal TXEN is high level, and the source-drain electrode of switch S2 is connected, node A warp
GND is connected to by switch S2.
10. on piece integrated circuit as claimed in claim 6 receives and dispatches matching network, which is characterized in that
For chip operation in reception state, transmitting enable signal TXEN is zero level, and switch S2 shutdown, node A is via switch S2
Its drain terminal is connected to GND to the parasitic capacitance C4 that GND is formed when shutdown；
For chip operation in emission state, transmitting enable signal TXEN is high level, and the source-drain electrode of switch S2 is connected, node A warp
GND is connected to by switch S2.
11. the on piece integrated circuit as described in any one of claim 1 ~ 10 receives and dispatches matching network, which is characterized in that connection
To GND, expression is connected to ground, or is connected to the negative terminal of chip radio frequency input/output port, or be connected to the negative terminal of antenna.
12. the on piece integrated circuit as described in claim 1 or 3 or 6 receives and dispatches matching network, which is characterized in that chip operation exists
When emission state, the secondary coil of on-chip transformer, which can be realized, is shorted to ground, then institute is not arranged between node A to GND
State switch S2.
13. a kind of on piece integrated circuit suitable for permanent envelope non-linear modulation receives and dispatches matching process, claim 1-11 is used
Any one of described in be suitable for the on piece integrated circuit of permanent envelope non-linear modulation and receive and dispatch matching network, which is characterized in that
It is realized with integrated circuit technology, in the transmission circuit using permanent envelope non-linear modulation communication mode, on piece transmitting electricity
The transmitting terminal TX on road is connected to the network the port of piece outside antenna by output bandpass filtering；The output bandpass filtering network is equipped with can
It is connected to the switch S1 of GND；
The receiving end RX that on piece receives circuit connects antenna matching network by on-chip transformer；The antenna matching network connection
The port of piece outside antenna, and it is equipped with the switch S2 that may be connected to GND；
Chip operation is in reception state, switch S1 closure, makes transmitting terminal TX to not having signal communication between antenna port,
And the switch S2 shutdown, the signal of antenna port are sent by antenna matching network, on-chip transformer to receiving end RX；
For chip operation in emission state, the switch S1 shutdown makes the signal of transmitting terminal TX pass through output bandpass filtering network
It is sent to antenna port, and the switch S2 is closed, on-chip transformer is made to be in the state that short circuit is connected to GND.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810992425.3A CN108683434B (en) | 2018-08-29 | 2018-08-29 | On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810992425.3A CN108683434B (en) | 2018-08-29 | 2018-08-29 | On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method |
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| Publication Number | Publication Date |
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| CN108683434A CN108683434A (en) | 2018-10-19 |
| CN108683434B true CN108683434B (en) | 2018-12-07 |
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| CN201810992425.3A Active CN108683434B (en) | 2018-08-29 | 2018-08-29 | On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method |
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Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110932747B (en) * | 2019-12-02 | 2020-08-21 | 翱捷智能科技(上海)有限公司 | Integrated high-performance radio frequency transmit-receive switch |
| CN114095049B (en) * | 2020-07-23 | 2023-05-23 | 深圳昂瑞微电子技术有限公司 | Radio frequency receiving and transmitting switch circuit, radio frequency front-end circuit and radio frequency transceiver |
| CN113972926B (en) * | 2020-07-23 | 2023-08-08 | 北京昂瑞微电子技术股份有限公司 | Radio frequency receiving and transmitting switch circuit, radio frequency front-end circuit and radio frequency transceiver |
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| CN101162928A (en) * | 2006-10-13 | 2008-04-16 | 松下电器产业株式会社 | High frequency power amplifier |
| CN103684518A (en) * | 2012-09-18 | 2014-03-26 | 北京中电华大电子设计有限责任公司 | Radio frequency circuit shared by transmitting and receiving matching networks based on on-chip transformer |
| CN103986493A (en) * | 2013-01-16 | 2014-08-13 | 联发科技（新加坡）私人有限公司 | Transceiver |
| CN104065395A (en) * | 2014-06-04 | 2014-09-24 | 北京中科汉天下电子技术有限公司 | Radio frequency front end device |
| US8886136B1 (en) * | 2011-04-22 | 2014-11-11 | Marvell International Ltd. | Two-pin TR switch with switched capacitor |
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| DE60315646T2 (en) * | 2003-08-15 | 2008-07-17 | Tdk Corp. | Antenna switching device |
| US8483628B2 (en) * | 2010-06-03 | 2013-07-09 | Broadcom Corporation | Multiple-phase frequency translated filter |
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| CN101162928A (en) * | 2006-10-13 | 2008-04-16 | 松下电器产业株式会社 | High frequency power amplifier |
| US8886136B1 (en) * | 2011-04-22 | 2014-11-11 | Marvell International Ltd. | Two-pin TR switch with switched capacitor |
| CN103684518A (en) * | 2012-09-18 | 2014-03-26 | 北京中电华大电子设计有限责任公司 | Radio frequency circuit shared by transmitting and receiving matching networks based on on-chip transformer |
| CN103986493A (en) * | 2013-01-16 | 2014-08-13 | 联发科技（新加坡）私人有限公司 | Transceiver |
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