CN108683434A - On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method - Google Patents
On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method Download PDFInfo
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- CN108683434A CN108683434A CN201810992425.3A CN201810992425A CN108683434A CN 108683434 A CN108683434 A CN 108683434A CN 201810992425 A CN201810992425 A CN 201810992425A CN 108683434 A CN108683434 A CN 108683434A
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- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B1/00—Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
- H04B1/38—Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
- H04B1/40—Circuits
Abstract
The present invention provides a kind of integrated transmitting-receiving matching network of on piece being suitable for permanent envelope non-linear modulation and methods, chip is in reception state, first switching switch is closed, the transmitting terminal TX of on piece radiating circuit is set not have signal communication between the port of piece outside antenna, and second switches switch OFF, the signal of antenna port is able to send to the receiving terminal RX of on piece receiving circuit by antenna matching network, on-chip transformer；In emission state, the first switching switch OFF makes the signal of transmitting terminal TX pass through output bandpass filtering network and is sent to antenna port, and the second switching switch is closed, and on-chip transformer is made to be in the state that short circuit is connected to GND.The present invention can be designed in integrated circuit silicon on piece and be realized; piece is outer in addition to antenna is without additional matching device; the a large amount of higher harmonic components generated when permanent envelope non-linear modulation signal transmitting can be filtered out; it is provided in input and the band logical of required frequency range is selected, also form the static electric charge discharge prevention to antenna component end using on-chip inductor.
Description
Technical field
The present invention relates to a kind of RF IC on piece match circuits, and it is logical to be especially applicable in constant-envelope, non-linear modulation
The on-chip antenna match circuit of letter mode.
Background technology
The match circuit of existing radio circuit antenna often utilizes the outer component of piece（Capacitance, inductance etc.）In printed circuit
Plate（PCB）The design of upper realization, precision and PCB to the impedance of component is proposed higher requirement, also increases BOM
（Bill of materials）Cost.Also it has tried to matching network to accomplish on piece, but the high order that can not effective filter out transmitting signal is humorous
Wave can generate interference to other communications bands.
With the development of integrated circuit, more and more circuits and peripheral components are integrated on silicon chip, are especially worn intelligently
It wears and the application field of low-power consumption internet of things equipment, very high requirement is more proposed to the integrated level of chip.Antenna match net
Network, and or need BALUN（The inductive transformer that on piece is realized is converted, impedance transformation etc., abbreviation on piece for single-ended, both-end
Transformer）, transceiver toggle switch（SWITCH）It is integrated on piece, not only reduces difficulty of matching when Application of integrated circuit, is increased
Add the stability of work, and considerably reduced the quantity and volume of component on printed circuit board, fully meets intelligence
The demand of energy wearable device and low-power consumption internet of things equipment, has great technical meaning and market value.
In low-power consumption Internet of Things and intelligent wearable device, it is the non-linear tune of permanent envelope to commonly use a kind of communication modulation mode
System, as Gaussian frequency shift moves keying（Gauss Frequency Shift Keying, GFSK）, have and difficulty realized to transmitting link
Low, low in energy consumption feature, therefore is widely adopted.But also due to non-linear modulation, often output spectrum contains very strong high order
Harmonic component can generate serious interference, it is necessary to which communication compatibility specification can just be met by being filtered out to other frequency range.Lack at present
One kind under constant-envelope, non-linear modulation communication mode, can effectively filter out the on-chip antenna matching electricity of higher harmonic components
Road.
Invention content
For the above situation, the present invention provides a kind of on piece integrated circuits being suitable for permanent envelope non-linear modulation communication
Matching network and method are received and dispatched, can design and realize in integrated circuit silicon on piece, without matching device outside additional piece, and can
The a large amount of higher harmonic components generated when permanent envelope non-linear modulation signal transmitting are greatly filtered out, while in input, output
The band logical selection to required frequency range is provided, is also formd using on-chip inductor natural to the electric discharge of antenna component end static electric charge
Protection.
In order to achieve the above object, a technical solution of the invention is to provide a kind of suitable for permanent envelope non-linear modulation
On piece integrated circuit receive and dispatch matching network, it includes：The inductance L1 of on piece, inductance L2, capacitance C1, capacitance C2, capacitance C3,
Switch S1, the on-chip transformer of NMOS tube；Piece is externally provided with antenna；
One end transmitting terminal TX connection inductance L2 of on piece radiating circuit output, the other end of inductance L2 is in node B connecting valves
The drain terminal of S1 and a pole plate of capacitance C2, the source that switch closes S1 are connected to GND, and switch S1 is by accessing connecing for its grid
Enable signal RXEN is received to control；
One end of another pole plate of capacitance C2, a pole plate and inductance L1 of capacitance C1, is all connected to the port of antenna；Capacitance
Another pole plate of C1 is connected to GND；
The other end of inductance L1 is in the primary coil input terminal of node A connection on-chip transformers, the other end and the electricity of primary coil
A pole plate for holding C3 is connected to GND, and another pole plate of capacitance C3 is connected to node A；The secondary coil of on-chip transformer with
The receiving terminal RX connections of on piece receiving circuit.
Optionally, chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna in reception state
Port is connected to the primary coil of on-chip transformer through inductance L1, and then is connected to GND；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in emission state
L1 is connected to GND.
Optionally, it by the connection structure of the inductance L1 other ends, capacitance C1 another pole plate, replaces with：
The other end of inductance L1 is connected to GND, and another pole plate of capacitance C1 is in the primary line of node A connection on-chip transformers
Enclose input terminal；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in reception state
L1 is connected to GND, and is connected to GND from primary coil of the antenna port through on-chip transformer；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in emission state
L1 is connected to GND.
Optionally, for chip operation in reception state, transmitting terminal TX does not have output signal, and it is height to receive enable signal RXEN
Level, the switch S1 that inductance L2 is connected by source-drain electrode are connected to GND；The signal of antenna passes through inductance L1, capacitance C1, capacitance
The input matching network that C2, capacitance C3 and on-chip transformer are formed enters on piece receiving circuit；
For chip operation in emission state, on-chip transformer is in the state that short circuit is connected to GND；Inductance L1 and capacitance C1 are formed
Resonant cavity；It is low level to receive enable signal RXEN, switch S1 shutdowns, and the band logical that inductance L2 and capacitance C2 form required frequency range is filtered
Wave structure；The structure that the signal of transmitting terminal TX outputs is formed by inductance L2, inductance L1, capacitance C1, capacitance C2 and capacitance C5
It is fitted on antenna port, parasitic capacitance of its drain electrode to GND when wherein capacitance C5 is switch S1 shutdowns.
Optionally, it by the connection structure of capacitance C2 another pole plate, two the inductance L1 other ends, capacitance C3 pole plates, replaces
For：
The other end of another pole plate and inductance L1 of capacitance C2, a pole plate in node C connection capacitances C3；Capacitance C3's
Primary coil input terminal of another pole plate in node A connection on-chip transformers；
Chip operation is respectively formed with the Electro-static Driven Comb path of complete direct current connection in reception state or emission state, from
Antenna port is connected to inductance L1, and then is connected to GND.
Optionally, for chip operation in reception state, transmitting terminal TX does not have output signal, and it is height to receive enable signal RXEN
Level, the switch S1 that inductance L2 is connected by source-drain electrode are connected to GND；Inductance L1, capacitance C1, capacitance C2 form input π types
The signal of distribution network, antenna enters on piece receiving circuit by the on piece input port that capacitance C3 and on-chip transformer are formed；
For chip operation in emission state, on-chip transformer is in the state that short circuit is connected to GND；Receiving enable signal RXEN is
Low level, switch S1 shutdowns, inductance L2 and capacitance C2 form the bandpass filtering structure of required frequency range；Capacitance C3 node A this
The pole plate of side is in the state for being connected to GND, and capacitance C3 and inductance L1, capacitance C1 is made to form the transmitting π types matching of required frequency range
Network；The structure matching that the signal of transmitting terminal TX outputs is formed by inductance L2, inductance L1, capacitance C1, capacitance C2 and capacitance C3
To antenna port.
Optionally, on piece integrated circuit transmitting-receiving matching network is further provided with the switch S2 of NMOS tube, makes switch S2's
Drain terminal is connected to node A, and the source of switch S2 is connected to GND, and switch S2 is by accessing the transmitting enable signal TXEN of its grid
To control；
Alternatively, chip operation, in emission state, the secondary coil of on-chip transformer, which can be realized, is shorted to ground, then is not provided with
The switch S2.
Optionally, for chip operation in reception state, transmitting enable signal TXEN is zero level, switch S2 shutdowns, node A
Its drain terminal is connected to GND to the parasitic capacitance C4 that GND is formed when being turned off via switch S2；
For chip operation in emission state, transmitting enable signal TXEN is high level, and the source-drain electrode of switch S2 is connected, node A warps
GND is connected to by switch S2.
Optionally, described to be connected to GND, expression is connected to ground, or is connected to the negative terminal of chip radio frequency input/output port, or
It is connected to the negative terminal of antenna.
Another technical solution of the present invention is to provide a kind of on piece integrated circuit being suitable for permanent envelope non-linear modulation
Matching process is received and dispatched, the on piece integrated circuit for being suitable for permanent envelope non-linear modulation using any one of the above receives and dispatches pair net
Network；
Wherein, it is realized with integrated circuit technology, in the transmission circuit using permanent envelope non-linear modulation communication mode, on piece hair
The port that the transmitting terminal TX of transmit-receive radio road passes through output bandpass filtering network connection piece outside antenna；The output bandpass filtering network is set
There is the first switching switch that may be connected to GND；
The receiving terminal RX of on piece receiving circuit connects antenna matching network by on-chip transformer；The antenna matching network connection
The port of piece outside antenna, and equipped with the second switching switch that may be connected to GND；
In reception state, the first switching switch is closed chip operation, makes transmitting terminal TX to not believing between antenna port
Number connection, and the second switching switch OFF, the signal of antenna port are sent by antenna matching network, on-chip transformer to connecing
Receiving end RX；
For chip operation in emission state, the first switching switch OFF makes the signal of transmitting terminal TX pass through output band logical filter
Wave network is sent to antenna port, and the second switching switch is closed, and on-chip transformer is made to be in the shape that short circuit is connected to GND
State.
Present invention is disclosed one kind to be suitable for integrated circuit technology（CMOS, GaAs, SOI etc.）It realizes, for constant packet
Network non-linear modulation communication mode（BPSK, GFSK, GMSK etc.）Transmission circuit on piece matching network, contain transmit-receive switch,
On-chip transformer（BALUN）And matching element.It not only can easily design and realize in integrated circuit silicon on piece, but also be not necessarily to
Device is matched outside additional sheet, and can greatly filter out a large amount of higher hamonic waves generated when permanent envelope non-linear modulation signal transmitting
Component, while being provided in input, output and the band logical of required frequency range is selected, natural pair is also formd using on-chip inductor
The static electric charge electric discharge of antenna component end（Electro-Static Discharge, ESD）Protection.
The matching network of existing major part radio circuit is to be realized in non-integrated circuit outside piece, and common
Matching network, conversion, matching just to complete for the impedance in the impedance to antenna of circuit, so that the transmitting-receiving of circuit is in power
It is best in transmission performance.
The features of the present invention, first is that on piece is realized（It, can on piece capacitance, the inductance structure realized by CMOS tube sub switch
At）, second is that can not only complete the conversion and matching of impedance, but also can realize and emit on piece for non-linear modulation communication
Signal higher hamonic wave filters out network, and third is to realize electrostatic protection function simultaneously.
Because of constant-envelope, non-linear debud mode, have the characteristics that efficiency of transmission is high, is used in more and more each
In kind of communication modulation mode, but a disadvantage of this mode is exactly to emit the frequency spectrum of signal to will produce in a large amount of non-channel
Higher hamonic wave, interference is generated to adjacent channel even other communications band.The present invention is in particular for this communication mode
Disadvantage is optimized, and except on piece designing impedance matching, is also specially added on piece and is exported bandpass filtering network, to this kind
The distinctive higher hamonic wave of modulation system filters out, and emission spectrum is made to be limited in oneself specific frequency range, to save the filter outside piece
Wave network, while accomplishing the matching of impedance.If not applying under nonlinear modulation system, then the signal itself of transmitting terminal
Frequency spectrum less generate higher hamonic wave, the output bandpass filtering network of transmitting terminal can not need.
The BPSK that the present invention is communicated to also belonging to constant-envelope, non-linear modulation, the modes such as GFSK, GMSK can basis
Circuit itself works the difference of best impedance, the power requirement of transmission and channel bands etc., specific implementation mode later
In, adapt to the size of adjustment such as pipe, bias voltage and switching voltage, capacitance, the parameter value of inductance and network complexity
It also can be different.
In order to embody ESD protections, in the numerous embodiments that disclose of the present invention, in addition to piece outside antenna ANT is other than piece,
Remaining circuit is all that on piece is realized, and the port of piece outside antenna ANT is the pin that a chip needs electrostatic protection；Chip draws
Foot must have certain electrostatic protection ability, otherwise can be broken by electrostatic, lead to pin failure, can not use.Either emit
State or reception state, the present invention always have the road of a complete direct current connection from the port of piece outside antenna ANT to the ground GND
Diameter always has the access of a static discharge that can be gone on the Electro-static Driven Comb to GND the port of piece outside antenna ANT.
Description of the drawings
Fig. 1 is the topological structure schematic diagram of on piece matching network of the present invention；
Fig. 2 is the structural schematic diagram of on piece matching network of the present invention in the first embodiment；
Fig. 3 is principle schematic when first embodiment chips are operated in reception state；
Fig. 4 is principle schematic when first embodiment chips are operated in emission state；
Fig. 5 is the structural schematic diagram of on piece matching network of the present invention in a second embodiment；
Fig. 6 is principle schematic when second embodiment chips are operated in reception state；
Fig. 7 is principle schematic when second embodiment chips are operated in emission state；
Fig. 8 is the structural schematic diagram of on piece matching network of the present invention in the third embodiment；
Fig. 9 is principle schematic when 3rd embodiment chips are operated in reception state；
Figure 10 is principle schematic when 3rd embodiment chips are operated in emission state.
Specific implementation mode
As shown in Figure 1, the present invention provides a kind of novel on piece matching network, topological structure includes：Export band logical filter
Wave network, antenna matching network, on-chip transformer B1, switch S1 and switch S2.Piece outside antenna ANT in figure is integrated circuit chip
Outer element, other is that on piece is realized.
Fig. 2 shows the first embodiments of on piece matching network of the present invention：
One end inductance L2 in integrated circuit in the output connection sheet of transmitting terminal TX, the other end of inductance L2 is in node B connections
The source of one pole plate of the drain terminal of the switch S1 of NMOS tube and the capacitance C2 of on piece, switch S1 connects GND, and grid passes through
Enable signal RXEN is received to control.Another pole plate of capacitance C2 and a pole plate of the capacitance C1 of on piece connect together, even
It is connected to piece outside antenna ANT, and one end of the inductance L1 in connection sheet；Another pole plate of capacitance C1 connects GND.
The other end of inductance L1 is in the primary coil input terminal of node A connection on-chip transformers B1 and the switch of NMOS tube
The other end of the drain terminal of S2, the primary coil of on-chip transformer B1 connects GND, and on-chip transformer B1 is simultaneously and capacitance C3 is in parallel.
The source of the switch S2 of NMOS tube connects GND, grid connection transmitting enable signal TXEN.The secondary coil of on-chip transformer B1
Connect receiving terminal RX.Here, without exception with GND is connected, to represent the negative terminal or antenna that are connected to ground, chip radio frequency input/output port
Negative terminal three kinds of situations.
As shown in figure 3, when chip operation is in reception state, transmitting terminal TX does not have output signal, might as well set reception at this time
Enable signal RXEN is high level, so that switch S1 source-drain electrodes is connected, so that this end segment that inductance L2 is connected with capacitance C2
Point B is conducting to GND, and transmitting terminal TX outputs only see the inductive load of inductance L2, and capacitance C2 is physically incorporated into capacitance C1 and becomes
Receive a matched part；At this point, capacitance C1 and capacitance C2 are in parallel, the pole plate of their sides is connected to the end of piece outside antenna ANT
One end inductance L1 of mouth and on piece, the other side is connected respectively to GND and is connected to GND by switch S1.
When receiving, transmitting enable signal TXEN might as well be set as zero level, switch S2 shutdowns, C4 be when switch S2 is turned off its
Parasitic capacitance of the drain terminal to GND.The signal of piece outside antenna ANT can only pass through inductance L1, capacitance C1, capacitance C2, capacitance C3, parasitism
The ∏ type matching networks that capacitance C4 and on-chip transformer B1 are constituted enter on piece receiving circuit, and transmitting terminal TX is due to inductance L2
The port for being connected to GND, therefore not having signal that can enter piece outside antenna ANT.
As shown in figure 4, in transmitting, transmitting enable signal TXEN might as well be set as high level, and switch S2 is connected, inductance L1's
Node A is connected to GND via switch S2, while the both sides of on-chip transformer B1 primary coils and capacitance C3 are connected respectively to GND
It is connected to GND with via the switch S2 of conducting, inductance L1 and capacitance C1 form parallel resonance chamber at this time；And on the grid of switch S1
RXEN might as well be set as zero level, switch S1 shutdowns, what transmitting terminal TX signals were connect via inductance L2 and with inductance L2 in node B
Capacitance C2 leads to the port of piece outside antenna ANT, parasitic capacitance of its drain electrode to GND when wherein capacitance C5 is switch S1 shutdowns.
When transmitting, transmitting terminal TX signals are output to by inductance L2, inductance L1, capacitance C1, capacitance C2 and capacitance C5 outside piece
The port of antenna ANT, and receive on-chip transformer B1 and be in short circuit and be connected to GND states, it can not receive from piece outside antenna ANT's
Signal.The connection status of inductance L2 and capacitance C2 forms the band-pass filtering property in required frequency range when due to transmitting, can be with
Effectively eliminate the higher harmonic components of output signal；The resonant cavity that inductance L1 and capacitance C1 are formed simultaneously can further increase
Output impedance in required frequency range, further improves output signal-to-noise ratio.If when transmitting, the on-chip transformer of on piece receiving portion
B1 secondary coils can be realized be shorted to ground if, can not also realize function when transmitting with switch S2 because on piece become
The characteristic of depressor B1 can guarantee the function of reaching and have switch S2 to realize.Therefore, switch S2 is carried with dotted line frame in above-mentioned Fig. 2
Show.
Fig. 5 shows second of embodiment of on piece matching network of the present invention, the main distinction with first embodiment
It is：Inductance L1 and capacitance C1 have exchanged position.
The output end of radiating circuit（Transmitting terminal TX）It is connected to the one end inductance L2, the other end of inductance L2 is in node B connections
A pole plate of capacitance C2, while node B is also connect with the drain terminal of the switch S1 of NMOS tube, another pole plate connection of capacitance C2
To the port of piece outside antenna ANT, wherein the grid connection of switch S1 receives enable signal RXEN, control switch S1 is closed or closes
Disconnected, the source electrode of switch S1 is connected to GND（Here, indicating to be connected to ground, chip radio frequency input/output port with being connected to GND without exception
Negative terminal or the negative terminal of antenna these three situations）.
The port of piece outside antenna ANT has been also respectively connected with one end of inductance L1 and a pole plate of capacitance C1, inductance L1's
The other end is connected to GND, and another pole plate of capacitance C1 is connected to node A, and is inputted with the primary coil of on-chip transformer B1
End is connected, and node A is also connected with the drain terminal of the switch S2 of NMOS tube and a pole plate of capacitance C3, and on-chip transformer B1 inputs are just
The other end of grade coil is connected with the other end of capacitance C3 and is connected to GND, and the connection of the grid of switch S2 emits enable signal
TXEN is connected to GND with the closure or shutdown, the source electrode of switch S2 that control switch S2.
As shown in fig. 6, when receiving, TXEN might as well be set as zero level and RXEN is high level, switch S1 in this way, which is closed, to be made
Node B is connected to GND via switch S1, and at this time turns off switch S2.Transmitting terminal TX is exported without signal at this time, while via
Inductance L2 is connected to GND, can not reach the port of piece outside antenna ANT.Inductance L1 and capacitance C1, capacitance C2 parallel connections form the outer day of piece
The signal of the input matching network of line ANT, piece outside antenna ANT is sent into on-chip transformer B1 simultaneously and the on piece of capacitance C3 formation is defeated
Inbound port, when C4 is switch S2 shutdowns, the parasitic capacitance of the opposite GND of switch S2 drain electrodes.
As shown in fig. 7, in transmitting, TXEN might as well be set as high level and RXEN is low level, switch S2 in this way, which is closed, to be made
Node A is connected to GND via switch S2, and at this time turns off switch S1.Since switch S2 closures make node A be shorted to GND, because
This on-chip transformer B1 and capacitance C3 is practical does not work, and the side pole plate of capacitance C1 is connected to GND, and electricity via switch S2
Sense L1 forms the resonant cavity of required frequency range, improves the load impedance of transmitting, increases transmitting signal-to-noise ratio.At this point, piece outside antenna ANT
Port is also arrived by capacitance C2 and inductance L2 the transmitting signal being connected at transmitting terminal TX, TX via structure matching shown in Fig. 7
Piece outside antenna ANT has filtered out the higher harmonic components of permanent envelope non-linear modulation signal well.If when transmitting, on piece connects
The on-chip transformer B1 secondary coils of receiving portions can be realized be shorted to ground if, can not also be with switch S2 come when realizing transmitting
Function because the characteristic of on-chip transformer B1 can guarantee reach have switch S2 realize function.Therefore, it is switched in above-mentioned Fig. 5
S2 is prompted with dotted line frame.
Fig. 8 shows the third embodiment of on piece matching network of the present invention, the main distinction with first embodiment
It is：A pole plate of capacitance C2 is not directly connected piece outside antenna ANT, but is connected with A points.
The output end of radiating circuit（Transmitting terminal TX）It is connected to inductance L2, the other end of inductance L2 is in node B connection capacitances
A pole plate of C2, while node B is also connected with the drain terminal of the switch S1 of NMOS tube, another pole plate of capacitance C2 is connected to node
C, wherein the grid connection of switch S1 receives enable signal RXEN, control switch S1 is closed or shutdown, the source electrode connection of switch S1
To GND（Here, without exception be connected to GND indicate to be connected to ground, the negative terminal of chip radio frequency input/output port or antenna negative terminal this
Three kinds of situations）.Node C is also connected with one end of inductance L1, and the other end of inductance L1 is connected and together with a pole plate of capacitance C1
Another pole plate for being connected to piece outside antenna ANT, capacitance C1 is connected to GND.Node C is also connected with a pole plate of capacitance C3, capacitance
Another pole plate of C3 inputs one end phase of primary coil in the drain terminal and on-chip transformer B1 of the node A and switch S2 of NMOS tube
Even.The grid connection transmitting enable signal TXEN of switch S2, to control closure or the shutdown of switch S2, the source electrode connection of switch S2
To GND.
As shown in figure 9, when receiving, TXEN might as well be set as zero level and RXEN is high level, switch S1 in this way, which is closed, to be made
Node B is connected to GND via switch S1, and at this time turns off switch S2.Transmitting terminal TX is exported without signal at this time, while via
Inductance L2 is connected to GND, can not reach the port of piece outside antenna ANT.Inductance L1 and capacitance C1, capacitance C2 form piece outside antenna
The input π type matching networks of ANT, the signal end of piece outside antenna ANT are sent into the piece that on-chip transformer B1 and capacitance C3 are formed simultaneously
Upper input port, when C4 is switch S2 shutdowns, the parasitic capacitance of the opposite GND of switch S2 drain electrodes.
As shown in Figure 10, in transmitting, TXEN might as well be set as high level and RXEN is low level, switch S2 in this way, which is closed, to be made
Node A is connected to GND via switch S2, and at this time turns off switch S1.Since switch S2 closures make node A be shorted to GND, because
This on-chip transformer B1 is practical not to work, and the side pole plate of capacitance C3 is connected to GND and inductance L1, electricity via switch S2
Hold the transmitting π type matching networks that C1 forms required frequency range.At this point, being also connected to TX output ends, shape by capacitance C2 and inductance L2
At the bandpass filtering network in required frequency range, TX emits signal via structure matching as shown in Figure 10 to piece outside antenna ANT's
Port, has filtered out the higher harmonic components of permanent envelope non-linear modulation signal well, and provides enough power transmissions
With gain.If transmitting, the on-chip transformer B1 secondary coils of on piece receiving portion can be realized be shorted to ground if, also may be used
To realize function when transmitting without switch S2, because the characteristic of on-chip transformer B1, which can guarantee to reach, switch S2 realizations
Function.Therefore, switch S2 is prompted with dotted line frame in above-mentioned Fig. 8.
A kind of on piece integrated circuit being suitable for permanent envelope non-linear modulation communication provided by the invention receives and dispatches matching network,
It can design and realize in integrated circuit silicon on piece, without matching device outside additional piece, and it is non-greatly to filter out permanent envelope
A large amount of higher harmonic components that linearly modulated signal generates when emitting, while being provided to required frequency range in input, output
Band logical selects, and is also formd using on-chip inductor natural to the electric discharge of antenna component end static electric charge（ESD）Protection.
Either emission state or reception state, in of the invention three kinds of specific implementations, always have one outside piece
The path that the complete direct current on the port of antenna ANT to the ground GND is connected to, i.e., always have the access of a static discharge can be day outside piece
It is gone on the Electro-static Driven Comb to GND of the port of line ANT, to realize to antenna component end static electric charge discharge prevention：
For example, in the corresponding first embodiment of Fig. 2, Fig. 3 and Fig. 4, in reception state, since the port of piece outside antenna ANT
Electro-static Driven Comb path be primary coils of the piece outside antenna ANT to inductance L1 to on-chip transformer B1, then arrive GND；And emitting shape
When state, from the port of piece outside antenna ANT to inductance L1, then GND is arrived.In the corresponding second embodiment of Fig. 5, Fig. 6 and Fig. 7, connecing
When receipts state, Electro-static Driven Comb path is from piece outside antenna ANT to inductance L1 and from piece outside antenna ANT to on-chip transformer B1
Primary coil, then arrive GND；When emission state, Electro-static Driven Comb path is piece outside antenna ANT to inductance L1, then arrives GND.Fig. 8, Fig. 9
In 3rd embodiment corresponding with Figure 10, no matter reception state or emission state, total there are one Electro-static Driven Comb path is outside piece
Antenna ANT is to inductance L1, then arrives GND.
Although present disclosure is discussed in detail by above preferred embodiment, but it should be appreciated that above-mentioned
Description is not considered as limitation of the present invention.After those skilled in the art have read the above, for the present invention's
A variety of modifications and substitutions all will be apparent.Therefore, protection scope of the present invention should be limited to the appended claims.
Claims (10)
1. a kind of on piece integrated circuit being suitable for permanent envelope non-linear modulation receives and dispatches matching network, which is characterized in that include：Piece
On inductance L1, inductance L2, capacitance C1, capacitance C2, capacitance C3, NMOS tube switch S1, on-chip transformer；Piece is externally provided with day
Line；
One end transmitting terminal TX connection inductance L2 of on piece radiating circuit output, the other end of inductance L2 is in node B connecting valves
The drain terminal of S1 and a pole plate of capacitance C2, the source of switch S1 are connected to GND, and switch S1 is by accessing the reception of its grid
Enable signal RXEN is controlled；
One end of another pole plate of capacitance C2, a pole plate and inductance L1 of capacitance C1, is all connected to the port of antenna；Capacitance
Another pole plate of C1 is connected to GND；
The other end of inductance L1 is in the primary coil input terminal of node A connection on-chip transformers, the other end and the electricity of primary coil
A pole plate for holding C3 is connected to GND, and another pole plate of capacitance C3 is connected to node A；The secondary coil of on-chip transformer with
The receiving terminal RX connections of on piece receiving circuit.
2. on piece integrated circuit as described in claim 1 receives and dispatches matching network, which is characterized in that
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in reception state
L1 is connected to the primary coil of on-chip transformer, and then is connected to GND；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in emission state
L1 is connected to GND.
3. on piece integrated circuit as described in claim 1 receives and dispatches matching network, which is characterized in that
By the connection structure of the inductance L1 other ends, capacitance C1 another pole plate, replace with：
The other end of inductance L1 is connected to GND, and another pole plate of capacitance C1 is in the primary line of node A connection on-chip transformers
Enclose input terminal；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in reception state
L1 is connected to GND, and is connected to GND from primary coil of the antenna port through on-chip transformer；
Chip operation is formed with the Electro-static Driven Comb path of complete direct current connection, from antenna port through inductance in emission state
L1 is connected to GND.
4. the on piece integrated circuit as described in claim 1 or 3 receives and dispatches matching network, which is characterized in that
For chip operation in reception state, transmitting terminal TX does not have output signal, and it is high level, inductance L2 to receive enable signal RXEN
The switch S1 be connected by source-drain electrode is connected to GND；The signal of antenna by inductance L1, capacitance C1, capacitance C2, capacitance C3 and
The input matching network that on-chip transformer is formed enters on piece receiving circuit；
For chip operation in emission state, on-chip transformer is in the state that short circuit is connected to GND；Inductance L1 and capacitance C1 are formed
Resonant cavity；It is low level to receive enable signal RXEN, switch S1 shutdowns, and the band logical that inductance L2 and capacitance C2 form required frequency range is filtered
Wave structure；The structure that the signal of transmitting terminal TX outputs is formed by inductance L2, inductance L1, capacitance C1, capacitance C2 and capacitance C5
It is fitted on antenna port, parasitic capacitance of its drain electrode to GND when wherein capacitance C5 is switch S1 shutdowns.
5. on piece integrated circuit as described in claim 1 receives and dispatches matching network, which is characterized in that
By the connection structure of capacitance C2 another pole plate, two the inductance L1 other ends, capacitance C3 pole plates, replace with：
The other end of another pole plate and inductance L1 of capacitance C2, a pole plate in node C connection capacitances C3；Capacitance C3's
Primary coil input terminal of another pole plate in node A connection on-chip transformers；
Chip operation is respectively formed with the Electro-static Driven Comb path of complete direct current connection in reception state or emission state, from
Antenna port is connected to inductance L1, and then is connected to GND.
6. on piece integrated circuit as claimed in claim 5 receives and dispatches matching network, which is characterized in that
For chip operation in reception state, transmitting terminal TX does not have output signal, and it is high level, inductance L2 to receive enable signal RXEN
The switch S1 be connected by source-drain electrode is connected to GND；Inductance L1, capacitance C1, capacitance C2 form input π type matching networks, antenna
Signal on piece receiving circuit is entered by the on piece input port that capacitance C3 and on-chip transformer are formed；
For chip operation in emission state, on-chip transformer is in the state that short circuit is connected to GND；Receiving enable signal RXEN is
Low level, switch S1 shutdowns, inductance L2 and capacitance C2 form the bandpass filtering structure of required frequency range；Capacitance C3 node A this
The pole plate of side is in the state for being connected to GND, and capacitance C3 and inductance L1, capacitance C1 is made to form the transmitting π types matching of required frequency range
Network；The structure matching that the signal of transmitting terminal TX outputs is formed by inductance L2, inductance L1, capacitance C1, capacitance C2 and capacitance C3
To antenna port.
7. the on piece integrated circuit as described in any one of claim 1 ~ 6 receives and dispatches matching network, which is characterized in that
It is further provided with the switch S2 of NMOS tube, the drain terminal of switch S2 is made to be connected to node A, the source of switch S2 is connected to
GND, switch S2 are controlled by accessing the transmitting enable signal TXEN of its grid；
Alternatively, chip operation, in emission state, the secondary coil of on-chip transformer, which can be realized, is shorted to ground, then is not provided with
The switch S2.
8. on piece integrated circuit as claimed in claim 7 receives and dispatches matching network, which is characterized in that
For chip operation in reception state, transmitting enable signal TXEN is zero level, and switch S2 shutdowns, node A is via switch S2
Its drain terminal is connected to GND to the parasitic capacitance C4 that GND is formed when shutdown；
For chip operation in emission state, transmitting enable signal TXEN is high level, and the source-drain electrode of switch S2 is connected, node A warps
GND is connected to by switch S2.
9. the on piece integrated circuit as described in any one of claim 1 ~ 8 receives and dispatches matching network, which is characterized in that be connected to
GND, expression is connected to ground, or is connected to the negative terminal of chip radio frequency input/output port, or is connected to the negative terminal of antenna.
10. a kind of on piece integrated circuit being suitable for permanent envelope non-linear modulation receives and dispatches matching process, using in claim 1-9
The on piece integrated circuit for being suitable for permanent envelope non-linear modulation described in any one receives and dispatches matching network, which is characterized in that
It is realized with integrated circuit technology, in the transmission circuit using permanent envelope non-linear modulation communication mode, on piece transmitting electricity
The port that the transmitting terminal TX on road passes through output bandpass filtering network connection piece outside antenna；The output bandpass filtering network is equipped with can
It is connected to the first switching switch of GND；
The receiving terminal RX of on piece receiving circuit connects antenna matching network by on-chip transformer；The antenna matching network connection
The port of piece outside antenna, and equipped with the second switching switch that may be connected to GND；
In reception state, the first switching switch is closed chip operation, makes transmitting terminal TX to not believing between antenna port
Number connection, and the second switching switch OFF, the signal of antenna port are sent by antenna matching network, on-chip transformer to connecing
Receiving end RX；
For chip operation in emission state, the first switching switch OFF makes the signal of transmitting terminal TX pass through output band logical filter
Wave network is sent to antenna port, and the second switching switch is closed, and on-chip transformer is made to be in the shape that short circuit is connected to GND
State.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810992425.3A CN108683434B (en) | 2018-08-29 | 2018-08-29 | On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method |
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|---|---|---|---|
| CN201810992425.3A CN108683434B (en) | 2018-08-29 | 2018-08-29 | On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method |
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| Publication Number | Publication Date |
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| CN108683434A true CN108683434A (en) | 2018-10-19 |
| CN108683434B CN108683434B (en) | 2018-12-07 |
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| CN201810992425.3A Active CN108683434B (en) | 2018-08-29 | 2018-08-29 | On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method |
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| CN113972926A (en) * | 2020-07-23 | 2022-01-25 | 北京昂瑞微电子技术股份有限公司 | Radio frequency transceiving switch circuit, radio frequency front-end circuit and radio frequency transceiver |
| CN114095049A (en) * | 2020-07-23 | 2022-02-25 | 深圳昂瑞微电子技术有限公司 | Radio frequency transceiving switch circuit, radio frequency front-end circuit and radio frequency transceiver |
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|---|---|
| CN108683434B (en) | 2018-12-07 |
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