CN104065395A - Radio frequency front end device - Google Patents
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- CN104065395A CN104065395A CN201410245368.4A CN201410245368A CN104065395A CN 104065395 A CN104065395 A CN 104065395A CN 201410245368 A CN201410245368 A CN 201410245368A CN 104065395 A CN104065395 A CN 104065395A
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Abstract
The invention provides a radio frequency front end device. The radio frequency front end device comprises at least two radio frequency transceiver circuits; each radio frequency transceiver circuit comprises a power amplifier, a matching network, a switching group and a filter, wherein the input end of the power amplifier is used for receiving the input of a radio frequency signal, and the output end of the power amplifier is connected with the input end of the matching network; the switching group comprises a first single-pole single-throw switch, a second single-pole single-throw switch and a blocking device; one end of the first single-pole single-throw switch is connected with the output end of the matching network, while the other end of the first single-pole single-throw switch is connected with the input end of the filter and one end of the blocking device, respectively, the other end of the blocking device is connected with one end of the second single-pole single-throw switch and a radio frequency signal receiving end, respectively, and the other end of the second single-pole single-throw switch is earthed. The cost of the entire radio frequency front end device can be effectively reduced, the isolation level of the radio frequency switches can be improved and the integration level of the radio frequency front end device can be improved.
Description
Technical field
The present invention relates to electronic communication devices field, relate in particular to a kind of radio frequency front-end device.
Background technology
Radio frequency front-end device is one of important component part of handheld mobile communication product (for example mobile phone), it is positioned at the position near handheld mobile communication product antenna, be related to reception and the transmitting of handheld mobile communication product radiofrequency signal, the quality of its performance has directly determined the quality of handheld mobile communication product communication quality.Below, in conjunction with Fig. 1, the structure of radio frequency front-end device common in prior art is introduced.Please refer to Fig. 1, Fig. 1 is the structural representation of radio frequency front-end device common in prior art, and this radio frequency front-end device is applicable to the handheld mobile communication product of working on two different frequency ranges.As shown in the figure, this radio frequency front-end device comprises low-frequency power amplifier (representing with LB PA in figure), low frequency matching network, high frequency power amplifier (representing with HB PA in figure), high-frequency matching network and radio-frequency (RF) switch.Wherein, low-frequency power amplifier and low frequency matching network form low frequencies path, high frequency power amplifier and high-frequency matching network form high-frequency emission path, radio-frequency (RF) switch adopts hilted broadsword four throw switches, these hilted broadsword four throw switches represent with S1, S2, S3 and S4 respectively, wherein, (by transmitting terminal Tx_LB) is connected with S1 in low frequencies path, (by transmitting terminal Tx_HB) is connected with S2 in high-frequency emission path, S3 (by receiving terminal Rx_LB) is connected with low frequency RX path, and S4 (by receiving terminal Rx_HB) is connected with high frequency RX path.Particularly, when S1 closure, when S2, S3 and S4 disconnect, radio frequency front-end device is operated under low frequency signal emission state, and low frequency signal is launched by antenna after arriving S1 by low frequencies path; When S3 closure, when S1, S2 and S4 disconnect, radio frequency front-end device is operated under low frequency signal accepting state, and the radiofrequency signal of antenna reception enters low frequency RX path after arriving S3; When S2 closure, when S1, S3 and S4 disconnect, radio frequency front-end device is operated under high-frequency signal emission state, and high-frequency signal is launched by antenna after arriving S2 by high-frequency emission path; When S4 closure, when S1, S2 and S3 disconnect, radio frequency front-end device is operated under high-frequency signal accepting state, and the radiofrequency signal of antenna reception enters high frequency RX path after reaching S4.
Known by foregoing description, the effect of radio-frequency (RF) switch is mainly to carry out function switching and sufficiently high isolation is provided between different frequency ranges and between signal transmitting and reception.It should be noted that, in the process of radio-frequency (RF) switch work, radio-frequency (RF) switch need to be by the signal of relatively high power, and the voltage bearing is also higher.So need design can bear the higher and larger radio-frequency (RF) switch of voltage swing of power, otherwise will cause the punch through damage of radio-frequency (RF) switch.
Because SOI technique has dielectric substrate and higher power bears capacity, therefore, in the prior art, conventionally adopt SOI technique to realize radio-frequency (RF) switch to meet above-mentioned designing requirement.But, adopt the radio-frequency (RF) switch of SOI technique still to have following weak point:
The first, compared to techniques such as CMOS, SOI technique to realize cost higher, that is to say, adopt SOI technique to realize radio-frequency (RF) switch by the corresponding raising that causes whole radio frequency front-end device cost;
The second, the trend of Designing power amplifier is to adopt CMOS technique, owing to having certain otherness between SOI technique and CMOS technique, therefore, adopt the radio-frequency (RF) switch of SOI technique and the power amplifier that adopts CMOS technique to integrate, be unfavorable for the raising of product integrated level.
Summary of the invention
In order to overcome above-mentioned defect of the prior art, the invention provides a kind of radio frequency front-end device, this radio frequency front-end device comprises at least two-way radio-frequency receiving-transmitting path, and described in each, radio-frequency receiving-transmitting path comprises power amplifier, matching network, switches set and filter, wherein:
The input input radio frequency signal of described power amplifier, and the output of this power amplifier connects the input of described matching network;
Described switches set comprises the first single-pole single-throw switch (SPST), the second single-pole single-throw switch (SPST) and block isolating device part;
One end of described the first single-pole single-throw switch (SPST) connects the output of described matching network, the other end of described the first single-pole single-throw switch (SPST) is connected with the input of described filter and one end of described block isolating device part respectively, the other end of described block isolating device part is connected with one end and the radiofrequency signal receiving terminal of described the second single-pole single-throw switch (SPST) respectively, the other end ground connection of described the second single-pole single-throw switch (SPST).
Compared with prior art, the present invention has the following advantages: be directed to radio-frequency (RF) switch part in radio frequency front-end device, the present invention utilizes single-pole single-throw switch (SPST) group and filter to replace single pole multiple throw of the prior art.On the one hand, in single-pole single-throw switch (SPST) group, each single-pole single-throw switch (SPST) is all without bearing the voltage that higher power and the amplitude of oscillation are larger, therefore, radio frequency front-end device provided by the present invention for radio-frequency (RF) switch to realize technological requirement lower, can adopt the low cost process such as such as CMOS to realize radio-frequency (RF) switch, and without selecting this expensive technique of SOI technique to realize radio-frequency (RF) switch as prior art, thus, ensureing, under the prerequisite of radio frequency front-end device performance, can effectively to reduce the cost of whole radio frequency front-end device; On the other hand, owing to adopting the design of single-pole single-throw switch (SPST) group, what therefore the size of radio-frequency (RF) switch can be done is very little, thus, the advantage that has simplified design and reduce whole radio frequency front-end device cost (it should be noted that, because radio-frequency (RF) switch size of the present invention is less than the size of conventional radio frequency switch, therefore, even if still adopt SOI technique to realize radio-frequency (RF) switch, the cost of radio frequency front-end device provided by the present invention is also lower than the cost of radio frequency front-end device that adopts conventional radio frequency switch); Another aspect, compared to a single pole multiple throw, due to separate between the single-pole single-throw switch (SPST) in single-pole single-throw switch (SPST) group, therefore has better isolation.In addition, in the time that the single-pole single-throw switch (SPST) in the power amplifier in radio frequency front-end device and single-pole single-throw switch (SPST) group adopts same process to realize, power amplifier and single-pole single-throw switch (SPST) group can also be integrated on same wafer, thus, can effectively reduce the device size of radio frequency front-end device and improve the integrated level of device.
Brief description of the drawings
By reading the detailed description that non-limiting example is done of doing with reference to the following drawings, it is more obvious that other features, objects and advantages of the present invention will become:
Fig. 1 is the structural representation of radio frequency front-end device common in prior art;
Fig. 2 is according to the structural representation of the radio frequency front-end device of a specific embodiment of the present invention;
Fig. 3 (a) and Fig. 3 (b) are respectively the structural representation of the switches set of low frequency shown in Fig. 2 under low frequency signal emission state and low frequency signal accepting state;
Fig. 4 (a) is the structural representation of a preferred embodiment of low frequency switches set shown in Fig. 3 (a);
Fig. 4 (b) is the structural representation of a preferred embodiment of low frequency switches set shown in Fig. 3 (b);
Fig. 5 (a) and Fig. 5 (b) be respectively radio frequency front-end device be according to a preferred embodiment of the present invention operated under low frequency signal emission state and low frequency signal accepting state under structural representation;
Fig. 6 is according to the structural representation of the radio frequency front-end device of another specific embodiment of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiments of the invention are described in detail.
The invention provides a kind of radio frequency front-end device, this radio frequency front-end device comprises at least two-way radio frequency wave-receiver, wherein:
The input input radio frequency signal of described power amplifier, and the output of this power amplifier connects the input of described matching network;
Described switches set comprises the first single-pole single-throw switch (SPST), the second single-pole single-throw switch (SPST) and block isolating device part;
One end of described the first single-pole single-throw switch (SPST) connects the output of described matching network, the other end of described the first single-pole single-throw switch (SPST) is connected with the input of described filter and one end of described block isolating device part respectively, the other end of described block isolating device part is connected with one end and the radiofrequency signal receiving terminal of described the second single-pole single-throw switch (SPST) respectively, the other end ground connection of described the second single-pole single-throw switch (SPST).
Before the structure of radio frequency front-end device provided by the present invention is specifically described, it should be noted that, radio frequency front-end device provided by the present invention is applicable to be operated in the handheld mobile communication product at least two frequency ranges.Hereinafter, to radio frequency front-end device provided by the present invention be described as example to be typically operated in two handheld mobile communication products on different frequency range in prior art, wherein, two of this handheld mobile communication product work frequency ranges represent with low frequency frequency range and high-frequency band respectively.
Below, in connection with Fig. 2, Fig. 3 (a) and Fig. 3 (b), the structure of radio frequency front-end device provided by the present invention is described.Wherein, Fig. 2 is according to the structural representation of the radio frequency front-end device of a specific embodiment of the present invention, and Fig. 3 (a) and Fig. 3 (b) are respectively the structural representation of the switches set of low frequency shown in Fig. 2 under low frequency signal emission state and low frequency signal accepting state.
Particularly, as shown in Figure 2, described radio frequency front-end device comprises two-way radio-frequency receiving-transmitting path, i.e. low frequency transmitting-receiving path and high frequency transmitting-receiving path.It should be noted that, because structure and the operation principle of low frequency transmitting-receiving path and high frequency transmitting-receiving path are similar, for brevity, only structure and the operation principle of low frequency transmitting-receiving path are specifically described below.
As shown in Figure 2, described low frequency transmitting-receiving path comprises low-frequency power amplifier (representing with LB PA), low frequency matching network, low frequency switches set and the low pass filter corresponding with this low frequency frequency range, wherein, the structure of described low frequency switches set please refer to Fig. 3 (a) and Fig. 3 (b), as shown in Fig. 3 (a) and Fig. 3 (b), described low frequency switches set comprises the first single-pole single-throw switch (SPST) SW1, the second single-pole single-throw switch (SPST) SW2 and block isolating device part.Particularly, described low-frequency power amplifier and described low frequency matching network form low frequencies path, the input of described low-frequency power amplifier connects low frequency signal input, be used for inputting low frequency signal, the output of described low-frequency power amplifier connects the input of low frequency matching network, the output (being the transmitting terminal Tx_LB of low side transmission path) of described low frequency matching network connects one end of described the first single-pole single-throw switch (SPST) SW1, the other end of described the first single-pole single-throw switch (SPST) SW1 is connected with one end of block isolating device part and the input of low-frequency filter respectively, the other end of described block isolating device part is connected (the receiving terminal Rx_LB that is connected to low frequency RX path) with one end and the low frequency RX path of the second single-pole single-throw switch (SPST) SW2 respectively, the other end ground connection of described the second single-pole single-throw switch (SPST) SW2, the output of described low pass filter connects antenna.Wherein, described the first single-pole single-throw switch (SPST) SW1 and described the second single-pole single-throw switch (SPST) SW can adopt PIN pipe switch, FET switch or BJT switch.
As shown in Fig. 3 (a), when the first single-pole single-throw switch (SPST) SW1 and the second single-pole single-throw switch (SPST) SW2 are during all in closure state, radio frequency front-end device is operated in low frequency signal emission state, be that armed low frequency signal reaches transmitting terminal Tx_LB by low frequencies path, then transfer to low pass filter by the first single-pole single-throw switch (SPST) SW1, filtered low frequency signal is launched via antenna; As shown in Fig. 3 (b), when the first single-pole single-throw switch (SPST) SW1 and the second single-pole single-throw switch (SPST) SW2 are during all in off-state, radio frequency front-end device is operated in low frequency signal accepting state, be antenna reception to signal after low pass filter filtering, obtain low frequency signal to be received, this low frequency signal arrives receiving terminal Rx_LB by block isolating device part, and via this receiving terminal, Rx_LB enters low frequency RX path.
Please refer to Fig. 4 (a) and Fig. 4 (b), Fig. 4 (a) is the structural representation of a preferred embodiment of low frequency switches set shown in Fig. 3 (a), and Fig. 4 (b) is the structural representation of a preferred embodiment of low frequency switches set shown in Fig. 3 (b).As shown in the figure, described block isolating device part is capacitor C.As shown in Fig. 4 (a), the first single-pole single-throw switch (SPST) SW1 and the second single-pole single-throw switch (SPST) SW2 are all in the time of closure state, capacitor C is using the part as low frequency matching network, in this state, the first single-pole single-throw switch (SPST) SW1 can be regarded as the conducting resistance of a little resistance, although now the first single-pole single-throw switch (SPST) SW1 is bearing the large-signal transmission that is about 35dBm, but the first single-pole single-throw switch (SPST) SW1 two ends are without obvious voltage difference, so the first single-pole single-throw switch (SPST) SW1 is in a safe condition all the time, and the second single-pole single-throw switch (SPST) SW2 is due to conducting, thereby two ends also have very little voltage swing.Thus, for example, even if the first single-pole single-throw switch (SPST) SW1 and the second single-pole single-throw switch (SPST) SW2 all adopt lower-cost technique (CMOS technique) to realize, the voltage that this amplitude of oscillation is very little also can not cause damage to the first single-pole single-throw switch (SPST) SW1 and the second single-pole single-throw switch (SPST) SW2.As shown in Fig. 4 (b), the first single-pole single-throw switch (SPST) SW1 and the second single-pole single-throw switch (SPST) SW2 are all in the time of off-state, low frequency matching network and low frequency RX path are separated, can not impact low frequency RX path, now, the two ends of the first single-pole single-throw switch (SPST) SW1 and the second single-pole single-throw switch (SPST) SW2 only have very little reception signal, can not bear the voltage that higher power and the amplitude of oscillation are larger, therefore the first single-pole single-throw switch (SPST) SW1 and the second single-pole single-throw switch (SPST) SW2 can be not damaged yet.In addition it should be noted that, in the time that low frequency signal is launched, because the second single-pole single-throw switch (SPST) SW2 is conducting to ground, thereby to there is very high isolation between transmitting terminal Tx_LB and receiving terminal Rx_LB; In the time that low frequency signal receives, because the first single-pole single-throw switch (SPST) SW1 disconnects, thereby concrete very high isolation still between transmitting terminal Tx_LB and receiving terminal Rx_LB.It will be appreciated by persons skilled in the art that described block isolating device part should not only limit to electric capacity, perhaps other have every device and the network of straight effect and include in the scope of protecting in the present invention equivalent electric.In addition, because the first single-pole single-throw switch (SPST) SW1 and the second single-pole single-throw switch (SPST) SW2 are all when the closure state, block isolating device part is using the part as low frequency matching network, therefore, in the selection of block isolating device part, also need the concrete structure of corresponding consideration low frequency matching network.For brevity, no longer all possible structure of block isolating device part is enumerated at this.
As shown in Figure 2, high frequency transmitting-receiving path comprises high frequency power amplifier (representing with HB PA), high-frequency matching network, HF switch group and the corresponding band pass filter of this high-frequency band.Because structure and the operation principle of high frequency transmitting-receiving path and low frequency transmitting-receiving path are similar, for brevity, no longer the structure of high frequency transmitting-receiving path is specifically described at this.
It will be understood by those skilled in the art that, low pass filter shown in Fig. 2 and band pass filter can be provided by duplexer, and low frequency switches set is connected in duplexer corresponding low pass filter and HF switch group is connected to corresponding band pass filter in duplexer.Further, if when radio frequency front-end device is operated in three or three with super band, the filter that the switches set corresponding with each frequency range connects can be provided by triplexer or multiplexer.
Please refer to Fig. 5 (a) and Fig. 5 (b), Fig. 5 (a) and Fig. 5 (b) be respectively radio frequency front-end device be according to a preferred embodiment of the present invention operated under low frequency signal emission state and low frequency signal accepting state under structural representation.Wherein, Fig. 5 (a) is identical with the low frequency switches set structure shown in Fig. 4 (a) with the structure of Fig. 5 (b) medium and low frequency switches set, is no longer repeated in this description at this.As shown in Fig. 5 (a), described low frequency matching network comprises inductance L 1, inductance L 2, capacitor C 1, capacitor C 2 and capacitor C 3, wherein, inductance L 1, inductance L 2 and capacitor C 3 are connected in series successively, node between described inductance L 2 and inductance L 2 is by capacitor C 1 ground connection, and the node between described inductance L 2 and capacitor C 3 is by capacitor C 2 ground connection.In the time of the first single-pole single-throw switch (SPST) SW1 and the equal closure of the second single-pole single-throw switch (SPST) SW2, described radio frequency front-end device is operated in low frequency signal emission state, now, and the common formation of capacitor C the first low frequency matching network in described low frequency matching network and low frequency switches set.As shown in Fig. 5 (b), in the time that the first single-pole single-throw switch (SPST) SW1 and the second single-pole single-throw switch (SPST) SW2 all disconnect, described radio frequency front-end device is operated in low frequency signal accepting state, enter low frequency RX path via the filtered low frequency signal of low pass filter by capacitor C, typically, described low frequency RX path comprises the second low frequency matching network, this the second low frequency matching network comprises capacitor C 4 and inductance L 3, wherein, one end of inductance L 3 is connected on the node between capacitor C and the second single-pole single-throw switch (SPST) SW2, one end ground connection of capacitor C 4, the other end of inductance L 3 is connected the output as low frequency signal with the other end of capacitor C 4.It will be understood by those skilled in the art that, the concrete form of the first low frequency matching network and the second low frequency matching network should only not only limit to above-mentioned giving an example, in other embodiments, also may there are other forms in the first low frequency matching network and the second low frequency matching network, the form that no longer may exist the first low frequency matching network and the second low frequency matching network at this for brevity, enumerates.
Please refer to Fig. 6, Fig. 6 is according to the structural representation of the radio frequency front-end device of another specific embodiment of the present invention.As shown in the figure, preferably, work as low-frequency power amplifier, high frequency power amplifier, single-pole single-throw switch (SPST) in single-pole single-throw switch (SPST) in low frequency switches set and HF switch group adopts identical technique to realize, for example all adopt CMOS technique to realize or all adopt other techniques such as GaAs technique to realize, in this case, low-frequency power amplifier, high frequency power amplifier, low frequency switches set and HF switch group can be integrated on same wafer, and low frequency matching network, high-frequency matching network, low pass filter and band pass filter can be integrated on chip piece by for example IPD technique.
Compared with prior art, the present invention has the following advantages: be directed to radio-frequency (RF) switch part in radio frequency front-end device, the present invention utilizes single-pole single-throw switch (SPST) group and filter to replace single pole multiple throw of the prior art.On the one hand, in single-pole single-throw switch (SPST) group, each single-pole single-throw switch (SPST) is all without bearing the voltage that higher power and the amplitude of oscillation are larger, therefore, radio frequency front-end device provided by the present invention for radio-frequency (RF) switch to realize technological requirement lower, can adopt the low cost process such as such as CMOS to realize radio-frequency (RF) switch, and without selecting this expensive technique of SOI technique to realize radio-frequency (RF) switch as prior art, thus, ensureing, under the prerequisite of radio frequency front-end device performance, can effectively to reduce the cost of whole radio frequency front-end device; On the other hand, owing to adopting the design of single-pole single-throw switch (SPST) group, what therefore the size of radio-frequency (RF) switch can be done is very little, thus, the advantage that has simplified design and reduce whole radio frequency front-end device cost (it should be noted that, because radio-frequency (RF) switch size of the present invention is less than the size of conventional radio frequency switch, therefore, even if still adopt SOI technique to realize radio-frequency (RF) switch, the cost of radio frequency front-end device provided by the present invention is also lower than the cost of radio frequency front-end device that adopts conventional radio frequency switch); Another aspect, compared to a single pole multiple throw, due to separate between the single-pole single-throw switch (SPST) in single-pole single-throw switch (SPST) group, therefore has better isolation.In addition, in the time that the single-pole single-throw switch (SPST) in the power amplifier in radio frequency front-end device and single-pole single-throw switch (SPST) group adopts same process to realize, power amplifier and single-pole single-throw switch (SPST) group can also be integrated on same wafer, thus, can effectively reduce the device size of radio frequency front-end device and improve the integrated level of device.
Above disclosed is only several preferred embodiment of the present invention, the interest field that certainly can not limit the present invention with this, and the equivalent variations of therefore doing according to the claims in the present invention, still belongs to the scope that the present invention is contained.
Claims (5)
1. a radio frequency front-end device, this radio frequency front-end device comprises at least two-way radio-frequency receiving-transmitting path, described in each, radio-frequency receiving-transmitting path comprises power amplifier, matching network, switches set and filter, wherein:
The input input radio frequency signal of described power amplifier, and the output of this power amplifier connects the input of described matching network;
Described switches set comprises the first single-pole single-throw switch (SPST), the second single-pole single-throw switch (SPST) and block isolating device part;
One end of described the first single-pole single-throw switch (SPST) connects the output of described matching network, the other end of described the first single-pole single-throw switch (SPST) is connected with the input of described filter and one end of described block isolating device part respectively, the other end of described block isolating device part is connected with one end and the radiofrequency signal receiving terminal of described the second single-pole single-throw switch (SPST) respectively, the other end ground connection of described the second single-pole single-throw switch (SPST).
2. radio frequency front-end device according to claim 1, wherein:
Described power amplifier, described the first single-pole single-throw switch (SPST) and described the second single-pole single-throw switch (SPST) adopt CMOS technique to realize.
3. radio frequency front-end device according to claim 1, wherein:
Described power amplifier, described the first single-pole single-throw switch (SPST) and described the second single-pole single-throw switch (SPST) adopt GaAs technique to realize.
4. according to arbitrary described radio frequency front-end device in claims 1 to 3, wherein:
Described power amplifier, described the first single-pole single-throw switch (SPST) and described the second single-pole single-throw switch (SPST) are integrated on same wafer.
5. radio frequency front-end device according to claim 1, wherein, described block isolating device part is electric capacity or equivalent capacity.
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| CN106685439A (en) * | 2017-01-18 | 2017-05-17 | 深圳铂睿智恒科技有限公司 | Diversity carrier aggregator achieving carrier aggregation |
| CN108683434A (en) * | 2018-08-29 | 2018-10-19 | 上海亮牛半导体科技有限公司 | On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method |
| CN108683434B (en) * | 2018-08-29 | 2018-12-07 | 上海亮牛半导体科技有限公司 | On piece suitable for permanent envelope non-linear modulation integrates transmitting-receiving matching network and method |
| CN109560832A (en) * | 2019-01-24 | 2019-04-02 | 广西芯百特微电子有限公司 | A kind of radio circuit and terminal for 5G communication |
| US11483779B2 (en) | 2020-08-21 | 2022-10-25 | Chiun Mai Communication Systems, Inc. | User equipment and communication method |
| CN114614771A (en) * | 2022-01-25 | 2022-06-10 | 电子科技大学 | Ultra-wideband radio frequency power amplifier based on frequency continuous adjustment |
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Application publication date: 20140924 |