CN112187184A - Configurable high-efficiency power amplifier - Google Patents
Configurable high-efficiency power amplifier Download PDFInfo
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- CN112187184A CN112187184A CN202011102688.6A CN202011102688A CN112187184A CN 112187184 A CN112187184 A CN 112187184A CN 202011102688 A CN202011102688 A CN 202011102688A CN 112187184 A CN112187184 A CN 112187184A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
- H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
Abstract
The invention discloses a configurable high-efficiency power amplifier, and relates to the technical field of microwave power amplifiers. According to the invention, by introducing a frequency self-adaptive control network into a microwave power amplifier circuit, on one hand, the internal power loss of a transistor is reduced by increasing the impedance between a drain electrode and a grid electrode, and the efficiency of the power amplifier is improved; on the other hand, the resonant frequency of the feedback resonant network is controlled according to the change of the input frequency of the power source, and the matched resonant network impedance is obtained, so that the microwave power amplifier can self-adaptively maintain higher output power and efficiency within a certain change range.
Description
Technical Field
The invention relates to the technical field of microwave power amplifiers, in particular to a frequency-adaptive efficient power amplifier.
Background
The power amplifier is an important component in a microwave wireless communication system, and is used for amplifying an input microwave signal and then outputting the amplified microwave signal through radiation of an antenna and the like, and the efficiency of the power amplifier directly influences the performance of the microwave wireless communication system. The Power Added Efficiency (PAE) expression is (Pout-Pin)/PDC, that is, the ratio of the output Power Pout minus the input Power Pin of the Power amplifier to the dc consumption Power PDC is one of important indexes for measuring the performance of the Power amplifier, and can simultaneously represent the capability of the Power amplifier to convert the dc Power into the microwave Power and amplify the microwave signal Power. At present, techniques for improving the efficiency of a microwave Power amplifier include a harmonic control technique, an Average Power Tracking (APT), an Envelope Tracking (ET), an Envelope isolation and recovery (EER), an outphasing modulation and Doherty technique, and the like. The above techniques all improve the performance of the power amplifier from the circuit level and improve the efficiency. In fact, the power leakage of the drain-gate feedback branch in the transistor is reduced, so that more power flows to the load, and the power added efficiency of the power amplifier can be effectively improved. In addition, a broadband high-efficiency power amplifier which obtains the optimal fundamental wave and harmonic impedance based on a load traction technology and is realized by utilizing a broadband matching network is a direct and common design method, but with the increase of the bandwidth, the high efficiency in the whole broadband range is difficult to be ensured.
Disclosure of Invention
The invention provides a method for improving the power additional efficiency and output power of a microwave power amplifier, which can automatically adjust parameters through a circuit, adapt to frequency change and keep higher power amplifier efficiency in a certain working bandwidth, and a microwave power amplifier circuit adopted by the method.
The invention adopts the technical scheme that the configurable high-efficiency power amplifier comprises: the power source comprises an input matching network, a grid electrode bias network, a transistor, an output matching network and a drain electrode bias network, wherein a signal to be amplified output by the power source sequentially passes through: the transistor comprises an input matching network, a transistor and an output matching network, wherein the output end of the input matching network is connected with the grid electrode of the transistor; the grid biasing network provides proper biasing voltage for the grid of the transistor, one end of the grid biasing network is connected with the input matching network, and the other end of the grid biasing network is connected with Vgg voltage; the source electrode of the transistor is grounded, the drain electrode of the transistor is connected with the input end of the output matching network, and the output end of the output matching network is connected with an external load; the drain electrode biasing network provides proper biasing voltage for the drain electrode of the transistor, one end of the drain electrode biasing network is connected with the output matching network, and the other end of the drain electrode biasing network is connected with Vdd voltage; characterized in that the power amplifier further comprises: the system comprises a coupler, a frequency monitoring and voltage control network and a resonance network; the coupler is arranged between the power source and the input matching network, and divides a signal to be amplified output by the power source into two paths, wherein one path of the signal is output to the input matching network, and the other path of the signal is output to the frequency monitoring and voltage control network; the frequency monitoring and voltage control network comprises in series: the frequency change counter detects the frequency change of a signal input by the coupler, and the frequency change mapping control maps the frequency change detected by the frequency change counter into voltage for output and adopts the output voltage to control the feedback resonant network; the resonant network comprises in series: the output end of the voltage-controlled variable capacitor C1 is connected with the gate of the transistor, and the output end of the inductor L1 is connected with the drain of the transistor; the output end of the frequency monitoring and voltage control network is connected with a voltage-controlled variable capacitor C1, and the capacitance value of the voltage-controlled variable capacitor C1 is controlled by the output voltage of the frequency monitoring and voltage control network.
Further, the method for designing the power amplifier comprises the following steps:
step 1: calculating corresponding capacitance values under different frequencies and different output voltages of the rectifier diode D1 according to a relation between the capacitance value of the voltage-controlled variable capacitor C1 and the output voltage of the rectifier diode D1;
according to a capacitance-inductance series resonance frequency formula:
wherein, L and C respectively represent the inductance value of an inductor L1 and the capacitance value of a voltage-controlled variable capacitor C1, and the inductance value of the resonance network is calculated to obtain the resonance network;
step 2: using load traction in ADS simulation software, and simulating according to the central working frequency point to obtain an input matching network and an input matching network;
and step 3: and (4) introducing the frequency monitoring and voltage control network and the resonance network, and then carrying out overall performance optimization to obtain the final power amplifier.
The invention introduces the high-resistance resonance network between the grid and the drain port of the transistor of the microwave power amplifier, so that the power leakage of the grid and the drain feedback channel in the transistor is reduced, thereby greatly improving the output power, the drain efficiency and the power additional efficiency of the microwave power amplifier, and the regulation and control of the feedback resonance network are completed by adding the frequency monitoring and voltage control network according to the change of the output voltage of the control network caused by the change of the input frequency, the parameters of the circuit device are automatically tuned to match the changed input frequency, and the higher efficiency of the power amplifier can still be ensured under the condition of ensuring the change of the input frequency.
Drawings
FIG. 1 is a schematic diagram of a circuit configuration according to an embodiment of the present invention.
Fig. 2 shows the simulation result of drain efficiency according to the embodiment of the present invention.
FIG. 3 shows simulation results of power added efficiency for embodiments of the present invention.
FIG. 4 shows simulation results of output power according to an embodiment of the present invention.
Detailed Description
Introducing a frequency self-adaptive control network into a microwave power amplifier, wherein the frequency self-adaptive control network consists of a coupler, a frequency monitoring and voltage control network and a resonance network, and the frequency self-adaptive control network comprises the following components: the coupler is positioned at the output port of the power source and is used for coupling one part of input power to the frequency monitoring network for frequency adaptive control, and the other part of the input power is coupled to the input matching network for microwave power amplification; the frequency monitoring and voltage control network comprises a monitoring input frequency change counter and a control for mapping frequency change into voltage, the counter is connected with the control in series, one end of the counter is connected with a port of the coupler 2, and an output port of the frequency monitoring and voltage control network is connected with the resonant network and used for monitoring input microwave frequency to obtain a voltage parameter for controlling the feedback network; the resonant network comprises a voltage-controlled variable capacitor C1 and an inductor L1 which are connected in series, wherein one end of the variable capacitor C1 is connected with a gate port of a transistor, one end of the inductor L1 is connected with a drain port of the transistor, and the capacitance value of the variable capacitor C1 is controlled by the output voltage of the frequency monitoring and voltage control network, so that the internal power loss of the transistor is reduced, and the efficiency of the power amplifier is improved; the frequency self-adaptation is to control the variable capacitance parameter in the resonance network through the output parameter of the frequency monitoring and voltage control network, thereby changing the impedance of the resonance network, self-adapting to different input frequencies, and ensuring to keep higher efficiency under different input frequencies.
The design method of the frequency self-adaptive high-efficiency power amplifier comprises the following steps:
(1) calculating corresponding capacitance values of the capacitors under different frequency monitoring and voltage control network output voltages according to a relation between the capacitance value of the voltage-controlled capacitor and the control voltage;
according to a capacitance-inductance series resonance frequency formula:
wherein L and C represent inductance and capacitance, respectivelyCalculating the inductance value of the resonance network to obtain the resonance network;
(2) using load traction in ADS simulation software, and simulating according to the central working frequency point to obtain an input matching network and an input matching network;
(3) introducing a frequency monitoring and voltage control network and a resonance network, and then carrying out overall performance optimization to obtain a final self-adaptive high-efficiency power amplifier circuit;
a frequency adaptive high efficiency power amplifier, the circuit shown in fig. 1, comprising: the circuit comprises a coupler frequency monitoring and voltage control network, a voltage-controlled variable capacitor C1, an inductor L1, a transistor, an input matching network, an output matching network, a grid biasing network, a drain biasing network and a 50 omega load resistor.
The frequency monitoring and voltage control network comprises a counter and a voltage control element which are connected in series, wherein one end of the counter is connected with a port of the coupler 2, the other end of the counter is connected with the voltage control element in series, and the other end of the voltage control element is an output port of the frequency monitoring and voltage control network and is connected with a resonant network.
The resonant network is characterized by comprising a variable capacitor C1 and an inductor L1 which are connected in series, wherein one end of the variable capacitor C1 is connected with a gate port of a transistor, one end of the inductor L1 is connected with a drain port of the transistor, and the capacitance value of the variable capacitor C1 is controlled by the output voltage of the frequency monitoring and voltage control network.
The input matching network and the output matching network are respectively microstrip transmission lines with different widths and are used for matching the optimal working state of the transistor;
a gate and drain bias network for providing a bias operating voltage to the transistor;
and finally, the load resistor of 50 omega is grounded.
FIG. 2 shows that the drain efficiency of the power amplifier is higher than 81% in the bandwidth of 5.77GHz-5.83GHz, and the optimal drain efficiency is 84% at the frequency point of 5.8 GHz; FIG. 3 shows that the power added efficiency of the power amplifier is better than 71 percent, and the power added efficiency at the frequency point of 5.8GHz is 73.2 percent; fig. 4 illustrates that the output power of the power amplifier is greater than 11.9W, and the output power is 12.4W at the frequency point of 5.8 GHz.
In summary, the invention introduces a high-resistance resonant network between the gate and drain ports of the transistor of the microwave power amplifier, so that the power leakage of the feedback channels of the gate and drain in the transistor is reduced, thereby greatly improving the output power, the drain efficiency and the power added efficiency of the microwave power amplifier, and by adding a frequency monitoring and voltage control network, the regulation and control of the feedback resonant network are completed according to the change of the output voltage of the control network caused by the change of the input frequency, and the parameters of the circuit device are automatically tuned to match the changed input frequency, thereby ensuring that the higher efficiency of the power amplifier can be still ensured under the condition of the change of the input frequency.
Claims (2)
1. A configurable, high-efficiency power amplifier, the amplifier comprising: the power source comprises an input matching network, a grid electrode bias network, a transistor, an output matching network and a drain electrode bias network, wherein a signal to be amplified output by the power source sequentially passes through: the transistor comprises an input matching network, a transistor and an output matching network, wherein the output end of the input matching network is connected with the grid electrode of the transistor; the grid biasing network provides proper biasing voltage for the grid of the transistor, one end of the grid biasing network is connected with the input matching network, and the other end of the grid biasing network is connected with Vgg voltage; the source electrode of the transistor is grounded, the drain electrode of the transistor is connected with the input end of the output matching network, and the output end of the output matching network is connected with an external load; the drain electrode biasing network provides proper biasing voltage for the drain electrode of the transistor, one end of the drain electrode biasing network is connected with the output matching network, and the other end of the drain electrode biasing network is connected with Vdd voltage; characterized in that the power amplifier further comprises: the system comprises a coupler, a frequency monitoring and voltage control network and a resonance network; the coupler is arranged between the power source and the input matching network, and divides a signal to be amplified output by the power source into two paths, wherein one path of the signal is output to the input matching network, and the other path of the signal is output to the frequency monitoring and voltage control network; the frequency monitoring and voltage control network comprises in series: the frequency change counter detects the frequency change of a signal input by the coupler, and the frequency change mapping control maps the frequency change detected by the frequency change counter into voltage for output and adopts the output voltage to control the feedback resonant network; the resonant network comprises in series: the output end of the voltage-controlled variable capacitor C1 is connected with the gate of the transistor, and the output end of the inductor L1 is connected with the drain of the transistor; the output end of the frequency monitoring and voltage control network is connected with a voltage-controlled variable capacitor C1, and the capacitance value of the voltage-controlled variable capacitor C1 is controlled by the output voltage of the frequency monitoring and voltage control network.
2. A design method for the power amplifier of claim 1, the method comprising:
step 1: calculating corresponding capacitance values under different frequencies and different output voltages of the rectifier diode D1 according to a relation between the capacitance value of the voltage-controlled variable capacitor C1 and the output voltage of the rectifier diode D1;
according to a capacitance-inductance series resonance frequency formula:
wherein, L and C respectively represent the inductance value of an inductor L1 and the capacitance value of a voltage-controlled variable capacitor C1, and the inductance value of the resonance network is calculated to obtain the resonance network;
step 2: using load traction in ADS simulation software, and simulating according to the central working frequency point to obtain an input matching network and an input matching network;
and step 3: and (4) introducing the frequency monitoring and voltage control network and the resonance network, and then carrying out overall performance optimization to obtain the final power amplifier.
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011102688.6A CN112187184A (en) | 2020-10-15 | 2020-10-15 | Configurable high-efficiency power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202011102688.6A CN112187184A (en) | 2020-10-15 | 2020-10-15 | Configurable high-efficiency power amplifier |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113810023A (en) * | 2021-08-31 | 2021-12-17 | 电子科技大学 | Impedance modulation system and method of digital power transmitting chip |
| CN114362693A (en) * | 2022-03-17 | 2022-04-15 | 壹甲子(成都)通讯有限公司 | Alternating current small signal driving radio frequency microwave amplifier |
| CN114400975A (en) * | 2021-12-15 | 2022-04-26 | 陕西亚成微电子股份有限公司 | Power amplification circuit based on envelope tracking technology and design method |
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| JP2001094361A (en) * | 1999-09-17 | 2001-04-06 | New Japan Radio Co Ltd | High frequency amplifier circuit |
| US20060001492A1 (en) * | 2004-07-02 | 2006-01-05 | Chang Sheng F | Bandpass amplifier |
| US20070296506A1 (en) * | 2006-06-13 | 2007-12-27 | Nec Electronics Corporation | High frequency amplifier configuration for improved feedback capacitance neutralization |
| WO2014176401A1 (en) * | 2013-04-24 | 2014-10-30 | Purdue Research Foundation | Band-reconfigurable and load-adaptive power amplifier |
| CN105048996A (en) * | 2015-06-03 | 2015-11-11 | 西安电子科技大学 | Mode-mixing low-pass filter with cut-off frequency self-correction |
| CN108847826A (en) * | 2018-06-21 | 2018-11-20 | 西安交通大学 | It is a kind of using the stack E power-like amplifier of dynamic bias network and its application |
-
2020
- 2020-10-15 CN CN202011102688.6A patent/CN112187184A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001094361A (en) * | 1999-09-17 | 2001-04-06 | New Japan Radio Co Ltd | High frequency amplifier circuit |
| US20060001492A1 (en) * | 2004-07-02 | 2006-01-05 | Chang Sheng F | Bandpass amplifier |
| US20070296506A1 (en) * | 2006-06-13 | 2007-12-27 | Nec Electronics Corporation | High frequency amplifier configuration for improved feedback capacitance neutralization |
| WO2014176401A1 (en) * | 2013-04-24 | 2014-10-30 | Purdue Research Foundation | Band-reconfigurable and load-adaptive power amplifier |
| CN105048996A (en) * | 2015-06-03 | 2015-11-11 | 西安电子科技大学 | Mode-mixing low-pass filter with cut-off frequency self-correction |
| CN108847826A (en) * | 2018-06-21 | 2018-11-20 | 西安交通大学 | It is a kind of using the stack E power-like amplifier of dynamic bias network and its application |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113810023A (en) * | 2021-08-31 | 2021-12-17 | 电子科技大学 | Impedance modulation system and method of digital power transmitting chip |
| CN113810023B (en) * | 2021-08-31 | 2023-05-09 | 电子科技大学 | Impedance modulation system and method for digital power transmitting chip |
| CN114400975A (en) * | 2021-12-15 | 2022-04-26 | 陕西亚成微电子股份有限公司 | Power amplification circuit based on envelope tracking technology and design method |
| CN114362693A (en) * | 2022-03-17 | 2022-04-15 | 壹甲子(成都)通讯有限公司 | Alternating current small signal driving radio frequency microwave amplifier |
| CN114362693B (en) * | 2022-03-17 | 2022-05-17 | 壹甲子(成都)通讯有限公司 | Alternating current small signal driving radio frequency microwave amplifier |
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