CN106533372A - Piecewise external matching type miniature power amplifier - Google Patents
Piecewise external matching type miniature power amplifier Download PDFInfo
- Publication number
- CN106533372A CN106533372A CN201611022918.1A CN201611022918A CN106533372A CN 106533372 A CN106533372 A CN 106533372A CN 201611022918 A CN201611022918 A CN 201611022918A CN 106533372 A CN106533372 A CN 106533372A
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- power
- impedance matching
- output
- power amplifier
- unit
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
- H03F1/483—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers with field-effect transistors
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The invention discloses a piecewise external matching type miniature power amplifier comprising a power allocator/synthesizer and two paths of identical amplification units, wherein each amplification unit comprises an input impedance matching unit, a field effect transistor and an output impedance matching unit, which are connected in sequence. The input impedance matching unit and the output impedance matching unit adopt a piecewise matching design, the small impedance input and output by the field effect transistor is only matched to 25 omega, thereby greatly reducing the structural size of the output impedance matching unit and reducing the influence of parallel large-size circuits to parasitic parameters; the power allocator/synthesizer adopts a miniature microwave multilayer circuit board structure and smartly realizes the conversion of 25 omega to 50 omega in power allocation and synthesis processes; and in addition, the circuits of the power allocator/synthesizer are arranged in a curved manner, so the structural size of the circuits will be greatly reduced, and the output power ability of the power amplifier is improved.
Description
Technical field
The present invention relates to a kind of be segmented outer matched miniaturization power amplifier.
Background technology
The wideband power amplifer of domestic design typically adopts interior matched chip at present, as domestic MMIC technologies develop
Later, the chip performance index of design is more external to also have certain gap, therefore the interior matched chip major part for using by foreign countries
Purchase, it is expensive, and many chips for China be all embargo product, increased the cost of wideband power amplifer design
With difficulty.With the development of microwave and millimeter wave technology, requirements at the higher level are proposed to power amplifier output power, it is desirable to which which has
The features such as broader operating frequency, bigger output, less volume are with more preferable stability.In existing technical foundation
On, in order to improve the output of product, synthesis way need to be increased or monolithic output is improved.Increase synthesis way meaning
The technical difficulty and structural volume for increasing power combing；Chip output is improved, needs to change Foreign High Power chip
The key technology and manufacturing process of present situation or breakthrough MMIC designs to China's embargo, current both schemes still have certain difficulty
Degree.Therefore low cost, the outer matching GaN field effect transistor of output power are selected, is the effective means for improving output ability.
As shown in figure 1, a kind of field effect transistor impedance matching circuit is given in prior art, its operating frequency is
0.8GHz-1.2GHz, whole match circuit mainly include 9 parts：Field effect transistor 101,50 Ω input ports 102, radio frequency of radio frequency
50 Ω output ports 103, input impedance matching network 104, output impedance matching networks 105, grid voltage offset line 106, leakage
Pole tension offset line 107, partially installing capacitor 108, bias inductors 109.Input impedance matching network 104 mainly solves stability, increases
Benefit, input standing wave the problems such as, output impedance matching networks 105 be used for complete amplifier output port and load between
Match somebody with somebody, its Main Function is to improve output, improve output VSWR and suppress harmonic wave.The impedance of field effect transistor input/output terminal
Value is less, usually several ohm levels, and this traditional method generally utilizes quarter-wave multi-stage stairs gradual change form, will
The little impedance of several ohm levels is directly matched in 50 Ω input ports 102 of radio frequency and 50 Ω output ports 103 of radio frequency, due to work
The low wavelength of working frequency is longer, and the physical dimension of the match circuit of this method design is larger, and coupling bandwidth has considerable restraint.
Meanwhile, in order to improve the overall output power capability of system, needs carry out power combing outside match circuit.When
Power distribution is carried out with during synthesis, is realized generally using Wilkinson power splitters, which has the disadvantage when working frequency range is widened,
The joint number of work(branch path will increase, and cause path to lengthen, loss increase, and used as during power synthesis circuit application, high loss will be straight
Connecing causes power combining efficiency to reduce.In high-power communication system, existing planar power synthesizer has that volume is big, power
Little, concordance is poor, the problems such as need assembling and setting repeatedly, it is impossible to meet wanting for system compact, high concordance and high reliability
Ask.
The content of the invention
For above-mentioned technical problem present in prior art, the present invention proposes a kind of outer matched miniaturization work(of segmentation
Rate amplifier, to meet the technical requirements of broadband, high-power, small size and high reliability.
To achieve these goals, the present invention is adopted the following technical scheme that：
It is a kind of to be segmented outer matched miniaturization power amplifier, including 50 Ω input ports of radio frequency, power divider, power
50 Ω output ports of synthesizer and radio frequency；Wherein：
50 Ω input ports of radio frequency are connected with power divider, and power combiner is connected with 50 Ω output ports of radio frequency；
Two-way identical amplifying unit is provided between power divider and power combiner；
Include that per road amplifying unit the input impedance matching unit, field effect transistor and the output impedance matching that are sequentially connected are single
Unit；Grid voltage bias unit and drain voltage bias unit are configured with scene effect pipe；
Power divider, for the signal entered via 50 Ω input ports of radio frequency is assigned as two-way all the way etc., then
It is input into wherein all the way in amplifying unit respectively；
Input impedance matching unit, for the signal impedance value of input is matched 25 Ω；
Field effect transistor, for the signal after matching is amplified process；
Output impedance matching unit, the signal impedance value for exporting after amplifying via field effect transistor match 25 Ω；
Grid voltage bias unit and drain voltage bias unit, for providing unidirectional current required when field effect transistor works
Pressure；
Power combiner, for realizing the signal synthesis after two-way amplification, composite signal is via 50 Ω output ports of radio frequency
Output；
During power distribution and power combing, while realizing the resistance value conversion of the Ω of 25 Ω to 50.
Preferably, the power amplifier is also including two 50 Ω loads；One end of one of them 50 Ω load and power
Allotter is connected, other end ground connection；One end of another 50 Ω load is connected with power combiner, other end ground connection.
Preferably, the power divider is identical with power combiner configurations.
Preferably, the power divider/power combiner includes intermediate circuit dielectric layer；
Power distribution/combiner circuit is integrated with the upper and lower both side surface of intermediate circuit dielectric layer, the power distribution/
Combiner circuit adopts the design structure that broadband couple device and broadband impedance are converted；
Second dielectric layer and bottom dielectric are sequentially provided with from inside to outside respectively in the upper and lower both sides of intermediate circuit dielectric layer
Layer.
Preferably, the power distribution/combiner circuit in the upper and lower both side surface of intermediate circuit dielectric layer according to curve side
Formula is arranged.
Preferably, version of the input impedance matching unit using T-shaped gradual change minor matters fitting curves gradual change.
Preferably, version of the output impedance matching unit using curve gradual change.
Preferably, the grid voltage bias unit and drain voltage bias unit adopt step mapped structure.
Preferably, the self-excitation that is respectively provided on two sides with output impedance matching unit suppresses outer matching array.
Compared with prior art, the invention has the advantages that：
(1) the two stage cultivation formula thought that the present invention is adopted, only need to be impedance-matched to input and output on 25 Ω, matching process
In employ the form of curve gradual change, conversion is gentle, greatly reduces matching unit design difficulty, beneficial to realizing broadband.
(2) integrated circuit adopts modular design method, input impedance matching unit and output impedance matching unit only to need
Input and output impedance are matched on 25 Ω, the physical dimension of matching unit is substantially reduced, and the conversion of the Ω of 25 Ω to 50
To realize in power divider and power combiner, and the distribution of power cleverly be realized while impedance is converted and is closed
Into.
(3) input impedance matching unit, output impedance matching unit and power divider, power combiner are tied by the present invention
Be integrated, between unit, connect compact, it is to avoid the rigid loss for being indirectly connected with bringing of tradition, at the same whole signal point
With and synthesis and impedance conversion complete in low loss dielectric, improve the output of power amplifier.
(4) high-power absorbing load port is respectively equipped with power divider and power combiner, and is connected with 50 Ω
Load, it is ensured that another road still normal work in the case of amplifying unit mismatch all the way；Simultaneously in output impedance matching unit
On increased self-excitation and suppress outer matching array, the stability of circuit can be improved, the generation of self-excitation phenomena is prevented.
(5) power divider and power combiner adopt the technical scheme of microwave multilayer circuit, in power distribution and synthesis
During realize the conversion of the Ω of 25 Ω to 50, the curved mode arrangement form of power distribution/combiner circuit, compact conformation are little
Ingeniously.
Description of the drawings
Fig. 1 is a kind of schematic diagram of field effect transistor impedance matching circuit in prior art；
Fig. 2 is a kind of schematic diagram of the outer matched miniaturization power amplifier of segmentation in the present invention；
Fig. 3 is the structural representation of power divider/synthesizer in the present invention；
Fig. 4 is the structural representation of single channel amplifying unit in the present invention；
Wherein, 101- field effect transistor, 50 Ω input ports of 102- radio frequencies, 50 Ω output ports of 103- radio frequencies, 104- inputs
Impedance matching network, 105- output impedance matching networks, 106- grid voltage offset lines, 107- drain voltage offset lines, 108-
Partially installing capacitor, 109- bias inductors；201- field effect transistor, 50 Ω input ports of 202- radio frequencies, 50 Ω output ports of 203- radio frequencies,
204- power dividers, 205- input impedance matching units, 206- grid voltage bias units, the biasing of 207- drain voltages are single
Unit, 208- output impedance matching units, 209- power combiners, 210-50 Ω loads, 211-50 Ω loads；301- intermediate circuits
Dielectric layer, 302- second dielectric layer, 303- bottom dielectric layers, 304- power distributions/combiner circuit；401- field effect transistor, 402-
25 Ω input ports of radio frequency, 25 Ω output ports of 403- radio frequencies, 404- input impedance matching units, the matching of 405- output impedances are single
Unit, 406- self-excitations suppress outer matching array, 407- grid voltage bias units, 408- drain voltage bias units.
Specific embodiment
Below in conjunction with the accompanying drawings and specific embodiment is described in further detail to the present invention：
As shown in Fig. 2 a kind of be segmented outer matched miniaturization power amplifier, including 50 Ω input ports 202, work(of radio frequency
Rate allotter 204,50 Ω output ports 203 of power combiner 209 and radio frequency.
Two-way identical amplifying unit is provided between power divider 204 and power combiner 209.
50 Ω input ports 202 of radio frequency are connected with power divider 204, for will be via 50 Ω input ports 202 of radio frequency
Into signal all the way etc. be assigned as two-way, be then input into respectively in amplifying unit all the way.
Include input impedance matching unit 205, field effect transistor 201 and output impedance matching unit per road amplifying unit
208.Wherein, input impedance matching unit 205, field effect transistor 201 and output impedance matching unit 208 are sequentially connected.
Input impedance matching unit 205, for the signal impedance value of input is matched 25 Ω.
Field effect transistor 201, for the signal after matching is amplified process.
Output impedance matching unit 208, the signal impedance value for exporting after amplifying via field effect transistor match 25
Ω。
Grid voltage bias unit 206 and drain voltage bias unit 207 are configured with scene effect pipe 201, for carrying
Required DC voltage when working for field effect transistor 201.
Power combiner 209, for realizing the signal synthesis after two-way amplification.
Power combiner 209 is connected with 50 Ω output ports 203 of radio frequency, the signal after power combiner 209 synthesizes
Export via 50 Ω output ports of radio frequency.
During power distribution and power combing, while realizing the resistance value conversion of the Ω of 25 Ω to 50.
In the impedance matching process of scene effect pipe 201, the little resistance value of input/output terminal is matched to into 25 Ω simply, and
The conversion of the Ω of 25 Ω to 50 is realized in power divider 204 with power combiner 209, is completed while impedance is converted
The distribution of power and synthesis, the design philosophy of the outer matched of this segmentation, will be substantially reduced the volume of whole power amplifier.
Additionally, when the little resistance value of the input/output port of field effect transistor 201 is only matched to 25 Ω, design will be substantially reduced
Difficulty and the length for matching link, and the Ω of 25 Ω to 50 conversion is realized in power divider 204 with power combiner 209, resistance
Transformation circuit fully belongs to passive matching, and its design difficulty can relative reduction.In addition, shortening field effect transistor matching link
Length, can avoid the impact of parasitic parameter for being brought due to long match circuit parallel, effectively increase the steady of power amplifier
It is qualitative.
Signal in the present invention power amplifier inside trend be：
During work, signal is entered by 50 Ω input ports 202 of radio frequency, will signal decile all the way via power divider 204
With for two-way, then field effect transistor 201, scene effect pipe 201 are entered into via input impedance matching unit 205 per signal all the way
Signal after middle amplification enters output impedance matching unit 208, completes through power combiner 209 per the signal after amplifying all the way
The synthesis of two paths of signals, is finally exported by 50 Ω output ports 203 of radio frequency.
In addition, power amplifier is also including two 50 Ω loads, one end of a 50 Ω load 210 and power divider
204 are connected, other end ground connection；One end of another 50 Ω load 211 is connected with power combiner 209, other end ground connection.
Corresponding high-power absorbing load port is respectively equipped with power divider 204 and power combiner 209.
By above-mentioned 50 Ω load designs so that when two paths of signals works, wherein in the case of there is mismatch all the way, which is anti-
Penetrate signal to be absorbed by 50 Ω loads, so as to ensure that whole amplifier still can be with normal work.
Power divider 204 in the present invention is identical with 209 structure of power combiner.
As shown in figure 3,204/ power combiner 209 of power divider includes intermediate circuit dielectric layer 301.
Power distribution/combiner circuit 304 is integrated with the upper and lower both side surface of intermediate circuit dielectric layer 301, the power
Distribution/combiner circuit 304 adopts the design structure that broadband couple device and broadband impedance are converted.
During power distribution with synthesis it is beneficial to realize conversion of the resistance value by the Ω of 25 Ω to 50.
Preferably, power distribution/combiner circuit 304 in the upper and lower both side surface of intermediate circuit dielectric layer according to curve side
Formula arranges to shorten the physical dimension of power distribution/combiner circuit 304, and there is that working band is wide.
Second dielectric layer 302 and bottom dielectric layer are sequentially provided with from inside to outside in the upside of intermediate circuit dielectric layer 301
303.In the same manner, second dielectric layer 302 and bottom dielectric layer are sequentially provided with from inside to outside in the downside of intermediate circuit dielectric layer 301
303。
As power divider 204 in the present invention and power combiner 209 employ the technology shape of microwave multilayer circuit
Formula so that compact overall structure is compact, easy for installation, conformity of production is high.
Below to be wherein described in further detail as a example by amplifying unit all the way：
As shown in figure 4, amplifying unit includes field effect transistor 401,25 Ω input ports 402 of radio frequency, 25 Ω outfans of radio frequency
Mouth 403, input impedance matching unit 404, output impedance matching unit 405, self-excitation suppress outer matching array 406, grid voltage
Bias unit 407, drain voltage bias unit 408.
Wherein, input impedance matching unit 404 mainly solves gain and its flatness problem.
Version of the input impedance matching unit 404 using T-shaped gradual change minor matters fitting curves gradual change, by input
The resistance value of ohm level matches 25 Ω, and wide band impedance matching is completed under the matching size of very little.
The effect of output impedance matching unit 405 is to obtain maximum power output.
Version of the output impedance matching unit 405 using curve gradual change, by the impedance of the ohm level of outfan
Value matches 25 Ω, and gradual change is gentle and substantially reduces the size of output impedance matching unit 405.
Grid voltage bias unit 407 and drain voltage bias unit 408 adopt step mapped structure.Bias unit is made
A part for impedance matching is designed emulation together, and the position of shunt capacitance in bias unit is optimized sets
Meter, and a resistance of having connected in grid voltage bias unit 407, increased the stability of match circuit.
In order to prevent the generation of self-excitation phenomena in actual application, distinguish in the both sides of output impedance matching unit 405
Above-mentioned self-excitation is set and suppresses outer matching array 406, by coordinating electric capacity or wave filter, the stability of circuit can be effectively improved.
Power amplifier in the present invention have the advantages that design difficulty reduce, physical dimension reduce, can meet broadband,
The technical requirements of high-power, small size and high reliability, with very strong engineering practicability.
Certainly, only presently preferred embodiments of the present invention described above, the present invention are not limited to enumerate above-described embodiment, should
When explanation, any those of ordinary skill in the art are under the teaching of this specification, all equivalent substitutes for being made, bright
Aobvious variant, all falls within the essential scope of this specification, ought to be protected by the present invention.
Claims (9)
1. it is a kind of to be segmented outer matched miniaturization power amplifier, it is characterised in that including 50 Ω input ports of radio frequency, power point
Orchestration, 50 Ω output ports of power combiner and radio frequency；Wherein：
50 Ω input ports of radio frequency are connected with power divider, and power combiner is connected with 50 Ω output ports of radio frequency；
Two-way identical amplifying unit is provided between power divider and power combiner；
Include input impedance matching unit, field effect transistor and the output impedance matching unit being sequentially connected per road amplifying unit；
Grid voltage bias unit and drain voltage bias unit are configured with scene effect pipe；
Power divider, for the signal entered via 50 Ω input ports of radio frequency is assigned as two-way all the way etc., then distinguishes
Input is wherein all the way in amplifying unit；
Input impedance matching unit, for the signal impedance value of input is matched 25 Ω；
Field effect transistor, for the signal after matching is amplified process；
Output impedance matching unit, the signal impedance value for exporting after amplifying via field effect transistor match 25 Ω；
Grid voltage bias unit and drain voltage bias unit, for providing DC voltage required when field effect transistor works；
Power combiner, for realizing the signal synthesis after two-way amplification, composite signal is exported via 50 Ω output ports of radio frequency；
During power distribution and power combing, while realizing the resistance value conversion of the Ω of 25 Ω to 50.
2. one kind according to claim 1 is segmented outer matched miniaturization power amplifier, it is characterised in that the power
Amplifier is also including two 50 Ω loads；One end of one of them 50 Ω load is connected with power divider, other end ground connection；Separately
One end of one 50 Ω load is connected with power combiner, other end ground connection.
3. one kind according to claim 1 is segmented outer matched miniaturization power amplifier, it is characterised in that the power
Allotter is identical with power combiner configurations.
4. one kind according to claim 3 is segmented outer matched miniaturization power amplifier, it is characterised in that the power
Allotter/power combiner includes intermediate circuit dielectric layer；
Power distribution/combiner circuit is integrated with the upper and lower both side surface of intermediate circuit dielectric layer, the power distribution/synthesis
Circuit adopts the design structure that broadband couple device and broadband impedance are converted；
Second dielectric layer and bottom dielectric layer are sequentially provided with from inside to outside respectively in the upper and lower both sides of intermediate circuit dielectric layer.
5. one kind according to claim 4 is segmented outer matched miniaturization power amplifier, it is characterised in that the power
Distribution/combiner circuit is arranged according to curve mode in the upper and lower both side surface of intermediate circuit dielectric layer.
6. one kind according to claim 1 is segmented outer matched miniaturization power amplifier, it is characterised in that the input
Version of the impedance matching unit using T-shaped gradual change minor matters fitting curves gradual change.
7. one kind according to claim 1 is segmented outer matched miniaturization power amplifier, it is characterised in that the output
Version of the impedance matching unit using curve gradual change.
8. one kind according to claim 1 is segmented outer matched miniaturization power amplifier, it is characterised in that the grid
Voltage bias unit and drain voltage bias unit adopt step mapped structure.
9. one kind according to claim 1 is segmented outer matched miniaturization power amplifier, it is characterised in that in output resistance
The self-excitation that is respectively provided on two sides with of anti-matching unit suppresses outer matching array.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611022918.1A CN106533372A (en) | 2016-11-18 | 2016-11-18 | Piecewise external matching type miniature power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611022918.1A CN106533372A (en) | 2016-11-18 | 2016-11-18 | Piecewise external matching type miniature power amplifier |
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| Publication Number | Publication Date |
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| CN106533372A true CN106533372A (en) | 2017-03-22 |
Family
ID=58352477
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
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| CN201611022918.1A Pending CN106533372A (en) | 2016-11-18 | 2016-11-18 | Piecewise external matching type miniature power amplifier |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400774A (en) * | 2018-03-22 | 2018-08-14 | 上海唯捷创芯电子技术有限公司 | A kind of balanced type radio-frequency power amplifier, chip and communication terminal |
| CN109039290A (en) * | 2018-07-05 | 2018-12-18 | 电子科技大学 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
| WO2020011148A1 (en) * | 2018-07-10 | 2020-01-16 | 苏州远创达科技有限公司 | Multi-chip module of radio frequency power amplifier |
| CN113242024A (en) * | 2021-05-18 | 2021-08-10 | 深圳市时代速信科技有限公司 | Radio frequency power amplifier |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108400774A (en) * | 2018-03-22 | 2018-08-14 | 上海唯捷创芯电子技术有限公司 | A kind of balanced type radio-frequency power amplifier, chip and communication terminal |
| CN109039290A (en) * | 2018-07-05 | 2018-12-18 | 电子科技大学 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
| WO2020011148A1 (en) * | 2018-07-10 | 2020-01-16 | 苏州远创达科技有限公司 | Multi-chip module of radio frequency power amplifier |
| CN113242024A (en) * | 2021-05-18 | 2021-08-10 | 深圳市时代速信科技有限公司 | Radio frequency power amplifier |
| CN113242024B (en) * | 2021-05-18 | 2023-06-20 | 深圳市时代速信科技有限公司 | Radio frequency power amplifier |
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Application publication date: 20170322 |