CN106982038A - A kind of high efficiency filtered power amplifier - Google Patents
A kind of high efficiency filtered power amplifier Download PDFInfo
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- CN106982038A CN106982038A CN201710276465.3A CN201710276465A CN106982038A CN 106982038 A CN106982038 A CN 106982038A CN 201710276465 A CN201710276465 A CN 201710276465A CN 106982038 A CN106982038 A CN 106982038A
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- 239000003990 capacitor Substances 0.000 claims abstract description 23
- 238000006243 chemical reaction Methods 0.000 claims abstract description 9
- 238000001914 filtration Methods 0.000 claims description 7
- 230000003321 amplification Effects 0.000 claims description 3
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 3
- 238000013461 design Methods 0.000 abstract description 13
- 238000004891 communication Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000005540 biological transmission Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 230000001629 suppression Effects 0.000 description 2
- 238000005452 bending Methods 0.000 description 1
- 230000021615 conjugation Effects 0.000 description 1
- 239000003984 copper intrauterine device Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
- H03F3/213—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/01—Frequency selective two-port networks
- H03H7/12—Bandpass or bandstop filters with adjustable bandwidth and fixed centre frequency
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D30/00—Reducing energy consumption in communication networks
- Y02D30/70—Reducing energy consumption in communication networks in wireless communication networks
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- Engineering & Computer Science (AREA)
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- Microwave Amplifiers (AREA)
Abstract
The invention discloses a kind of high efficiency filtered power amplifier, including input matching network structure, power tube, direct grid current feeding network, drain electrode DC feedback network and output matching filter network；The input matching network includes microstrip line, capacitance and π type input impedance conversion networks；The direct grid current feeding network includes microstrip-fed line and some first filter capacitors；The drain electrode DC feedback network includes output impedance converter, the microstrip-fed line in narrow side, the microstrip-fed line of broadside, capacitance and the second filter capacitor；The output matching filter network includes some step electric impedance resonators, micro-strip connecting line and port.It is of the invention compared with existing independent design filtered power amplifier, by the way that power amplifier and wave filter are joined directly together, realize miniaturization and high efficiency filtered power amplifier.
Description
Technical field
The present invention relates to wireless communication technology field, more particularly to a kind of high efficiency filtered power amplifier.
Background technology
Radio-frequency front-end is the important component of wireless communication system, is the indispensable crucial portion of wireless communication system
Part.Radio-frequency front-end includes Receiver And Transmitter, and wherein radio frequency sending set mainly includes power amplifier and wave filter, tradition side
Method is the two independent design, is then attached again.Have the disadvantage that power amplifier needs most preferably to export it by matching network
It is impedance-matched to 50 ohm directly to be cascaded with filter network again, is so typically easy to bring volume big, total amount weight
Problem, meanwhile, the introducing of matching network will bring loss reduces the shortcoming of power amplifier output power greatly.
With the development of radio communication, communication system is increasingly intended to miniaturization and integrated, and therefore, integrated penetrates
Frequency receiver has great demand.Filtering power amplifier, which combines the front-end devices such as power amplifier, wave filter, to be designed, can
So that the structure of radio-frequency transmitter system is compacter, reduces unnecessary loss and introduce so that the miniaturization of radio-frequency transmitter
It is more prone to realize with high efficiency.
In existing radio-frequency receiving system, realize high efficiency radio-frequency transmitter mainly by output matching network by power
The optimal output impedance of amplifier is transformed to 50 ohm, then the connecting line and 50 ohm of filter network by 50 ohm are direct
Cascade is realized.During due to design, the mismatch and wave filter and matching network of power amplifier and wave filter and 50 Ohm connection lines
The loss brought, the power added efficiency of usual power amplifier will be substantially reduced.In general, 1dB loss can be by work(
The efficiency of rate amplifier drops to 60% from 80%.
The filtered power amplifier of integrated design is for the filtered power amplifier of independent design, due to that will filter
The input impedance of ripple device is directly designed to the optimal output impedance of power amplifier, is put so as to eliminate independent design filtered power
The matching network structure of big device.Therefore the loss that matching network is brought is avoided, while integrated design filtered power amplifier
Realize the miniaturization of radio-frequency transmitter and integrated.
The content of the invention
The technical problem to be solved in the present invention is there is provided a kind of high efficiency filtered power amplifier, with existing independence
Design filtered power amplifier is compared, by the way that power amplifier and wave filter are joined directly together, and realizes miniaturization and high efficiency
Filtered power amplifier.
In order to solve the above technical problems, the present invention provides following technical scheme：A kind of high efficiency filtered power amplifier, bag
Include input matching network structure, power tube, direct grid current feeding network, drain electrode DC feedback network and output matching wave filter net
Network, wherein
Optimal input impedance of the input matching network structure for matching 50 ohm power tube so that power is put
Big device reaches the power added efficiency of maximum；
The power tube is used for the amplification to input signal；
The direct grid current feeding network is used for the grid that gate bias voltage is loaded into power tube, so as to provide power amplifier
The grid quiescent point of pipe；
The drain electrode DC feedback network is used for the grid that drain bias voltage is loaded into power tube, so as to provide power amplifier
The drain electrode quiescent point of pipe；
The output matching filter network is used to the optimal output impedance of power tube matching 50 ohm so that power
Amplifier reaches the power added efficiency of maximum；Output matching filter network has the filtering characteristic of wave filter and right again simultaneously
Higher hamonic wave is inhibited.
Further, the input matching network includes microstrip line, capacitance and π type input impedance conversion networks；
One end of the π types input impedance conversion network is connected with the power tube, the other end by the capacitance with it is described micro-
Band line is connected.
Further, the microstrip line is 50 ohm.
Further, the direct grid current feeding network includes microstrip-fed line and some first filter capacitors；It is described micro-
Upper end with feed line is connected with each first filter capacitor respectively, and the lower end of the microstrip-fed line and the π types are defeated
Enter the upper end connection of impedance transformer network.
Further, the microstrip-fed line is the microstrip-fed line of L-type, and the first filter capacitor quantity is 3.
Further, the drain electrode DC feedback network is micro- including output impedance converter, the microstrip-fed line in narrow side, broadside
Band feed line, capacitance and the second filter capacitor；One end of the output impedance converting network is connected, separately with the power tube
One end is connected by the capacitance with the output matching filter network；One end of the narrow band microstrip feed line and institute
The upper end connection of output impedance converting network, the other end is stated to be connected with the filter capacitor and the broadside direct-current tie.
Further, the length of the narrow edged feeder microstrip line is λg/ 16, λgFor the high efficiency filtered power amplifier
The wavelength of the centre frequency of matching network.
Further, the output matching filter network includes some step electric impedance resonators, micro-strip connecting line and end
Mouthful, the electric impedance resonator connection micro-strip connecting line and port.
Further, the step electric impedance resonator is λg/ 4 step electric impedance resonator, λgWork(is filtered for the high efficiency
The wavelength of the centre frequency of rate amplifier matching network.
Further, the step electric impedance resonator quantity is 2, and each step electric impedance resonator includes narrow wall part
Divide and broadside portion, coupled between the broadside portion of 2 step electric impedance resonators by gap, each stepped impedance resonance
The narrow wall part of device point is all connected with the micro-strip connecting line and port.
After adopting the above technical scheme, the present invention at least has the advantages that：
1st, Designing power amplifier and filter network are combined together by the present invention, and devising one has filter function
High-efficiency amplifier.By the way that the input impedance of wave filter to be designed as to the optimum impedance of power amplifier, so that power tube
It is joined directly together with wave filter, therefore the structure of power amplifier is compact；
2nd, filter network structure of the invention is to be based on λg/ 4 step electric impedance resonators, by by λg/ 4 stepped impedances are humorous
The device that shakes, which is folded, make it that whole filter construction is compacter；
3rd, the filter network structure of existing filtered power amplifier is normally based on the design method of bandpass filter
It is designed, and the design that bandpass filter is generally relatively focused in passband, outside the closer band of passband, suppress signal
The effect passed through is generally not fine, and the Out-of-band rejection for wanting to improve bandpass filter usually requires to increase bandpass filter
Exponent number so that the design of wave filter is more complicated, size increase；The filter network structure of the present invention is to be based on λg/ 4 ladders hinder
Antiresonance device, by λgThe narrow wall part of/4 step electric impedance resonators point is connected by a narrow band microstrip line 21, and it is in distance
The frequency band of the nearer both sides of passband is able to produce a transmission zero, and the effect that suppression signal passes through is preferable, therefore can be real
Existing preferable filtering characteristic and Out-of-band rejection characteristic.
Brief description of the drawings
Fig. 1 is a kind of structural representation of high efficiency filtered power amplifier of the invention；
Fig. 2 numbers the structural representation of mark for a kind of progress of high efficiency filtered power amplifier of the invention in detail；
Fig. 3 illustrates for the input matching network and grid feeder structure of a kind of high efficiency filtered power amplifier of the invention
Figure；
Fig. 4 is the drain electrode feeder structure and output matching wave filter net of a kind of high efficiency filtered power amplifier of the invention
Network structural representation；
Fig. 5 is a kind of impedance diagram of the output matching filter network of high efficiency filtered power amplifier of the invention；
Fig. 6 is emulation S parameter curve map in the embodiment of the present invention；
Fig. 7 is the analogous diagram of power output and efficiency in the embodiment of the present invention.
Embodiment
It should be noted that in the case where not conflicting, the feature in embodiment and embodiment in the application can phase
Mutually combine, the application is described in further detail with specific embodiment below in conjunction with the accompanying drawings.
Reference picture 1, Fig. 2, the present embodiment filtered power amplifier architecture, including input matching network structure 1, a power amplifier
Pipe 2, direct grid current feeding network 3, drain electrode DC feedback network 4 and output matching filter network 5.While power amplifier knot
Structure is that, in the upper surface of medium substrate 6, lower surface is floor of the conductive copper 7 as filtered power amplifier.Described input
Distribution network 1 includes one section 50 ohm of microstrip line 8, capacitance 9, π type input impedance conversions network 10；The input impedance of π types becomes
One end of switching network 10 is connected with power tube 2, and the other end is connected by capacitance 9 with 50 ohm of microstrip line 8.Described grid
Pole DC feedback network 3 includes the microstrip-fed line of L-type, and filter capacitor 12, filter capacitor 13 and filter capacitor 14 are constituted；L-type is micro-
Upper end with feed line 11 is connected with filter capacitor 12, filter capacitor 13, filter capacitor 14 respectively, the microstrip-fed line 11 of L-type
Lower end is connected with the upper end of π type input impedance conversions network 10, and the microstrip-fed line 11 of L-type and external dc are electrically connected to provide work(
Put tube grid voltage.Described drain electrode DC feedback network 4 includes output impedance converter 15, the microstrip-fed line 17 in narrow side, width
The microstrip-fed line 18 in side, capacitance 19 and filter capacitor 16；One end of output impedance converting network 10 is connected with power tube, separately
One end is connected by capacitance 19 with output matching filter network 5, and one end and the output impedance of narrow band microstrip feed line become
The upper end of switching network 10 is connected, and the other end is connected with filter capacitor 16 and broadside direct-current tie 18.Wideband microband line 18 and outer
Portion's direct current is electrically connected to provide power tube drain voltage.Described output matching filter network 5 includes two (1/4) λgRank
Terraced electric impedance resonator 20a, 20b, one section of micro-strip connecting line 21 and port 2.(1/4)λgStep electric impedance resonator 20a passes through narrow side
Port on part is connected with capacitance 19, (1/4) λgStep electric impedance resonator 20a and (1/4) λgStep electric impedance resonator
20b broadside portions are separated by a bit of gap, and narrow wall part point is connected by narrow side micro-strip connecting line 21.
As an example, when requiring to design CGH40010F power tube centre frequency 2.45G, bandwidth of operation is 180M's
During high efficiency filtered power amplifier, it is 14+14*j Ω in the optimal output impedance of center frequency point.With reference to Fig. 3 and Fig. 4 institutes
The size marking shown, uses relative dielectric constant to do substrate, 50 ohm of microstrip line for the dielectric-slab that 2.55, thickness is 0.8mm
Key dimension 8a, 8b be respectively 2.2mm and 6mm.The key dimension 23a of π type input impedance conversion networks, 23b, 26a, 26b,
27a, 27b are respectively 2.2mm, 7.9mm, 2.6mm, 8.6mm, 13.8mm, 2.6mm.The key dimension 24a of the microstrip-fed line of L-type,
24b, 25a, 25b are respectively 7.6mm, 2.4mm, 2.4mm, 9.6mm.Capacitance 9, filter capacitor 12, filter capacitor 13, filtering
The capacitance of electric capacity 14 is respectively 4.7pf, 100pf, 10pf, 1pf.The key dimension 15a and 15b of output impedance variator be respectively
2.2mm and 2mm.Key dimension 17a, 17b of narrow edged feeder line and 33 points of the position positioned at output impedance converter upper surface
Wei not 6mm, 0.5mm, 0.6mm.Key dimension 18a, 18b of broadside feed line is respectively 6.8mm and 2mm.Encapsulation number is 0603
Capacitance 19 and the capacitance of filter capacitor 16 be respectively 3.9pf, 10pf.The key dimension 28a of port 28 and port 22,
28b, 22a, 22b are respectively 1.5mm, 1.6mm, 1.5mm, 2.2mm.(1/4)λgThe key dimension 34 of step electric impedance resonator,
35th, 36,29a, 29b, 37 are respectively 9.7mm, 0.8mm, 0.7mm, 9.6mm, 2mm, 9.9mm.(1/4)λgStep electric impedance resonator
Radius R and the r size of disk and via is respectively 0.7mm, 0.4mm.Two (1/4) λgGap between step electric impedance resonator
30 size is 0.2mm.Key dimension 22a, 22b of port two is respectively 2.2mm, 2.3mm.The key dimension of narrow side microstrip line
31a and 31b are respectively 0.5mm, 5.6mm.
For the design example, it is preferred that the CGH40010F GaN of described power tube selection GREE companies production
HEMT power tubes；Capacitance selects ATC600S3R9 or ATC600S4R7；Filter capacitor select ATC600S1R0 or
ATC600S100 or ATC600S101.
It is preferred that, the length of the narrow edged feeder microstrip line is (1/16) λg, λgMatched for high efficiency filtered power amplifier
The wavelength of the centre frequency of network.
It is preferred that, the length of the step electric impedance resonator of the second order filter network is (1/4) λg, λgFiltered for high efficiency
The wavelength of the centre frequency of Power Amplifier matching network.
It is preferred that, the length of the narrow side bending part of the second-order filter network is (1/8) λg, λgWork(is filtered for high efficiency
The wavelength of the centre frequency of rate amplifier matching network.
The Smith impedance diagrams of the filter construction are as shown in Figure 5, it can be seen that, more concentrated in 2.4G-2.5G impedances
Near the optimal output impedance 14+14*j of power amplifier.The filtered power amplifier matching network is at one end optimal output
S parameter in the case that the other end is 50 ohm in the case of the conjugation (14-14*j) of impedance is as shown in Figure 6.It can be seen that, logical
Minimum 0.4dB in band, has respectively reached 60dB and 73dB, while Out-of-band rejection is equal in two transmission zeros 2G and 4G suppression
More than 30dB.The analogous diagram for connecting power output in the case of power amplifier and efficiency is as shown in Figure 7, it can be seen that this
The power output of power amplifier under distribution network is both greater than 40dBm under 2.36GHZ-2.54GHZ, and efficiency is all higher than 60%.
Show good filtering characteristic and high efficiency.
Although an embodiment of the present invention has been shown and described, for the ordinary skill in the art, can be with
Understand, can carry out a variety of equivalent changes to these embodiments without departing from the principles and spirit of the present invention
Change, change, replace and modification, the scope of the present invention is limited by appended claims and its equivalency range.
Claims (10)
1. a kind of high efficiency filtered power amplifier, it is characterised in that straight including input matching network structure, power tube, grid
Current feed network, drain electrode DC feedback network and output matching filter network, wherein
Optimal input impedance of the input matching network structure for matching 50 ohm power tube so that power amplifier
Reach the power added efficiency of maximum；
The power tube is used for the amplification to input signal；
The direct grid current feeding network is used for the grid that gate bias voltage is loaded into power tube, so as to provide power tube
Grid quiescent point；
The drain electrode DC feedback network is used for the drain electrode that drain bias voltage is loaded into power tube, so as to provide power tube
Drain quiescent point；
The output matching filter network is used to the optimal output impedance of power tube matching 50 ohm so that power amplification
Device reaches the power added efficiency of maximum；Output matching filter network has the filtering characteristic of wave filter and to high order again simultaneously
Harmonic wave is inhibited.
2. a kind of high efficiency filtered power amplifier according to claim 1, it is characterised in that the input matching network
Including microstrip line, capacitance and π type input impedance conversion networks；One end of the π types input impedance conversion network and institute
State that power tube is connected, the other end is connected by the capacitance with the microstrip line.
3. a kind of high efficiency filtered power amplifier according to claim 2, it is characterised in that the microstrip line is 50 Europe
Nurse.
4. a kind of high efficiency filtered power amplifier according to claim 1, it is characterised in that the direct grid current feed
Network includes microstrip-fed line and some first filter capacitors；Filtered respectively with each described first the upper end of the microstrip-fed line
Ripple capacitance connection, the lower end of the microstrip-fed line is connected with the upper end of the π types input impedance conversion network.
5. a kind of high efficiency filtered power amplifier according to claim 4, it is characterised in that the microstrip-fed line is
The microstrip-fed line of L-type, the first filter capacitor quantity is 3.
6. a kind of high efficiency filtered power amplifier according to claim 1, it is characterised in that the drain electrode DC feedback
Network includes output impedance converter, the microstrip-fed line in narrow side, the microstrip-fed line of broadside, capacitance and the second filter capacitor；
One end of the output impedance converting network is connected with the power tube, the other end passes through the capacitance and the output
With filter network connection；One end of the narrow band microstrip feed line is connected, separately with the upper end of the output impedance converting network
One end is connected with the filter capacitor and the broadside direct-current tie.
7. a kind of high efficiency filtered power amplifier according to claim 6, it is characterised in that the narrow edged feeder micro-strip
The length of line is λg/ 16, λgFor the wavelength of the centre frequency of the high efficiency filtered power amplifier matching network.
8. a kind of high efficiency filtered power amplifier according to claim 1, it is characterised in that the output matching filtering
Device network includes some step electric impedance resonators, micro-strip connecting line and port, electric impedance resonator connection micro-strip connecting line and
Port.
9. a kind of high efficiency filtered power amplifier according to claim 8, it is characterised in that the stepped impedance resonance
Device is λg/ 4 step electric impedance resonator, λgFor the wavelength of the centre frequency of the high efficiency filtered power amplifier matching network.
10. a kind of high efficiency filtered power amplifier according to claim 8 or claim 9, it is characterised in that the stepped impedance
Number of resonators is 2, and each step electric impedance resonator includes narrow wall part point and broadside portion, 2 stepped impedance resonance
Coupled between the broadside portion of device by gap, the narrow wall part point of each step electric impedance resonator is all connected with the micro-strip and connected
Wiring and port.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201710276465.3A CN106982038B (en) | 2017-04-25 | 2017-04-25 | High-efficiency filtering power amplifier |
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| CN201710276465.3A CN106982038B (en) | 2017-04-25 | 2017-04-25 | High-efficiency filtering power amplifier |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108183694A (en) * | 2018-01-15 | 2018-06-19 | 清华大学 | Load adjustable power amplifier |
| CN108449056A (en) * | 2018-04-08 | 2018-08-24 | 华南理工大学 | A kind of filtered power amplifier of SIR types suspension line filter |
| CN111654256A (en) * | 2020-05-22 | 2020-09-11 | 华南理工大学 | Double-frequency filtering power amplifier |
| CN117118373A (en) * | 2023-10-19 | 2023-11-24 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | High-power radio frequency circuit based on three-dimensional matching circuit and design method |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN108183694A (en) * | 2018-01-15 | 2018-06-19 | 清华大学 | Load adjustable power amplifier |
| CN108183694B (en) * | 2018-01-15 | 2020-09-25 | 清华大学 | Load-adjustable power amplifier |
| CN108449056A (en) * | 2018-04-08 | 2018-08-24 | 华南理工大学 | A kind of filtered power amplifier of SIR types suspension line filter |
| CN111654256A (en) * | 2020-05-22 | 2020-09-11 | 华南理工大学 | Double-frequency filtering power amplifier |
| CN117118373A (en) * | 2023-10-19 | 2023-11-24 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | High-power radio frequency circuit based on three-dimensional matching circuit and design method |
| CN117118373B (en) * | 2023-10-19 | 2024-03-22 | 西南应用磁学研究所(中国电子科技集团公司第九研究所) | High-power radio frequency circuit based on three-dimensional matching circuit and design method |
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| Publication number | Publication date |
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| CN106982038B (en) | 2023-05-23 |
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