CN207368982U - A kind of field-effect transistor pulse power amplifier - Google Patents
A kind of field-effect transistor pulse power amplifier Download PDFInfo
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- CN207368982U CN207368982U CN201721770932.XU CN201721770932U CN207368982U CN 207368982 U CN207368982 U CN 207368982U CN 201721770932 U CN201721770932 U CN 201721770932U CN 207368982 U CN207368982 U CN 207368982U
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Abstract
The utility model discloses a kind of field-effect transistor pulse power amplifier, including field-effect transistor V1, the grid feed circuit and input signal filter circuit for providing gate bias voltage are connected with the grid of field-effect transistor V1, the drain electrode feed circuit and output signal filter circuit for providing drain bias voltage are connected with the drain electrode of field-effect transistor V1, grid feed circuit includes the first shunt capacitance C2, first shunt capacitance C2 one end is grounded, and the other end is connected with the grid of field-effect transistor V1；Drain electrode feed circuit includes the second shunt capacitance C8, second shunt capacitance C8 one end ground connection, and the other end is connected with the drain electrode of field-effect transistor V1；The application is by will connect field effect transistor gate, the quarter-wave Low ESR open-circuit line of drain electrode replaces with shunt capacitance, improve the bandwidth of amplifier, the high frequency radiation reduced in circuit influences, and improves the signal-to-noise ratio of FET amplifier and the stability of amplifier.
Description
Technical field
It the utility model is related to a kind of amplifier, and in particular to a kind of field-effect transistor pulse power amplifier.
Background technology
FET amplifier is voltage control device, has the advantages that input impedance is high, noise is low, extensively should
In electronic circuit, particularly go out more property with above-mentioned requirements pre-amplifier display.It is big according to field-effect transistor two
Type -- junction field effect transistor and isolated-gate field effect transistor (IGFET) may make up corresponding FET amplifier.
Conventional FET amplifier design form is fairly simple, in input/output terminal plus partiting dc capacitor, adds
Feeding network, offsets match are realized by preparing the open-circuit line of low-impedance a quarter.The shortcomings that this design form
Be amplifier bandwidth it is partially narrow, vision signal is easily revealed, and influences the stability of amplifier and circuit so that the letter of signal
Make an uproar than reducing.
The content of the invention
The purpose of this utility model is to provide a kind of field-effect transistor pulse power amplifier to solve the prior art
In FET amplifier existing for bandwidth it is partially narrow, the problem of influencing the stability of amplifier and circuit.
In order to realize above-mentioned task, the utility model uses following technical scheme：
A kind of field-effect transistor pulse power amplifier, including field-effect transistor V1, the field-effect transistor V1
Grid on be connected with grid feed circuit and input signal filter circuit for providing gate bias voltage, the field effect
Answer the drain electrode feed circuit and output signal filtered electrical being connected with the drain electrode of transistor V1 for providing drain bias voltage
Road, the grid feed circuit include the first shunt capacitance C2, the first shunt capacitance C2 one end ground connection, the other end with it is described
The grid connection of field-effect transistor V1；The drain electrode feed circuit includes the second shunt capacitance C8, second shunt capacitance
C8 one end is grounded, and the other end is connected with the drain electrode of the field-effect transistor V1.
Further, the grid feed circuit further includes, and one end is connected first high with the first shunt capacitance C2
Impedance line g1, the other end of the first high impedance line g1 are connected with the field effect transistor gate.
Further, the grid feed circuit further includes, the first damped vibration circuit and with the first damped vibration electricity
Road the first filter capacitor C4 in parallel, the first damped vibration circuit on one side ground connection, the other end and grid power supply input terminal VGS
Connection, the first filter capacitor C4 one end ground connection, the other end are connected with grid power supply input terminal VGS.
Further, the first damped vibration circuit includes first resistor R1, and to connect with the resistance R1
One capacitance C3.
Further, the drain electrode feed circuit further includes, and one end is connected second high with the second shunt capacitance C8
The other end of impedance line g2, the second high impedance line g2 are connected with field-effect transistor drain electrode.
Further, it is described drain electrode feed circuit further include, the second damped vibration circuit and with the second damped vibration electricity
Road the second filter capacitor C6 in parallel, the second damped vibration circuit on one side ground connection, the other end and drain power input terminal VDS
Connection, the second filter capacitor C6 one end ground connection, the other end are connected with drain power input terminal VDS.
Further, the second damped vibration circuit includes second resistance R2, and connects with the second resistance R2
The second capacitance C5.
Further, the input signal filter circuit includes the 3rd high impedance line g3, the 3rd high impedance line g3 mono-
End ground connection, the other end are connected with capacitance C1；Described capacitance C1 one end is connected with the 3rd high impedance line g3, the other end with
First high impedance line g1 connections.
Further, the output signal filter circuit includes the 4th high impedance line g4, the 4th high impedance line g4 mono-
End ground connection, the other end are connected with capacitance C7；Described capacitance C7 one end is connected with the 4th high impedance line g4, the other end with
Second high impedance line g2 connections.
Further, the substrate B ends of the field-effect transistor V1 and source electrode be altogether.
The utility model has following technical characterstic compared with prior art:
1st, field effect transistor gate will be connected, the quarter-wave Low ESR open-circuit line of drain electrode replaces with bypass electricity
Hold, improve the bandwidth of amplifier, while reduce the influence of the high frequency radiation in circuit, improve FET amplifier
Signal-to-noise ratio；
2nd, the ground wire of quarter-wave high impedance is added in the input terminal and output of radiofrequency signal, will
Video leakage signal is directly grounded, and avoids video leakage signal from directly influencing the input signal of next stage amplifier.
Brief description of the drawings
Fig. 1 is amplifier principle schematic diagram provided by the utility model；
Fig. 2 is amplifier circuit figure provided by the utility model；
Fig. 3 is amplifier equivalent circuit diagram provided by the utility model；
Embodiment
Above-mentioned technical proposal is deferred to, as shown in Figure 1 to Figure 3, the utility model discloses a kind of field-effect transistor pulse
Power amplifier, including field-effect transistor V1, are connected with the grid of field-effect transistor V1 for providing gate bias electricity
The grid feed circuit and input signal filter circuit of pressure, are connected with the drain electrode of field-effect transistor V1 for providing drain electrode
The drain electrode feed circuit and output signal filter circuit, grid feed circuit of bias voltage include the first shunt capacitance C2, the
Bypass capacitor C2 one end is grounded, and the other end is connected with the grid of field-effect transistor V1；The feed circuit that drains is included by the of second
Road capacitance C8, second shunt capacitance C8 one end ground connection, the other end are connected with the drain electrode of field-effect transistor V1.
The application field-effect transistor pulse power amplifier design schematic block circuit diagram as shown in Figure 1, radiofrequency signal
Input is filtered by input signal filter circuit eliminates low-frequency effects therein, and grid feed circuit is used for providing for grid
Bias voltage, drain electrode feed circuit are used for providing bias voltage for drain electrode, and filtered radiofrequency signal passes through field-effect transistor
V1 amplifies, and output signal eliminates interference therein by output signal filter circuit.
As shown in Figure 2,3, the Low ESR quarter-wave open-circuit line in grid feed circuit is replaced with the application
First shunt capacitance C2, first shunt capacitance C2 one end is connected to ground, for radiofrequency signal equivalent to open circuit, the first shunt capacitance
The C2 other ends are connected with field-effect transistor V1 grids, for radiofrequency signal equivalent to open circuit, therefore ensure that radiofrequency signal
Transmission energy not outward leakage, distributed transmission；Low ESR quarter-wave open-circuit line in the feed circuit that drains is replaced with the
Two shunt capacitance C8, second shunt capacitance C8 one end is connected to ground, for radiofrequency signal equivalent to open circuit, the second shunt capacitance C8
The other end is connected with field-effect transistor V1 drain electrodes, for radiofrequency signal equivalent to open circuit, therefore ensure that the biography of radiofrequency signal
Delivery of energy amount not outward leakage, distributed transmission.
Further, the grid feed circuit further includes, the first high impedance that one end is connected with the first shunt capacitance C2
Line g1, the other end of the first high impedance line g1 are connected with field-effect transistor V1 grids.
As shown in Figure 2,3, first shunt capacitance C2 one end is connected to the first high impedance line g1, and the first high impedance line g1 is
Quarter-wave high impedance line, the first shunt capacitance C2 are connected by the grid of the first high impedance line g1 and field-effect transistor V1
Connect, for the radiofrequency signal section equivalent to short circuit, ensure the transmission energy of radiofrequency signal not outward leakage；In addition, the first high impedance
Line g1 is also connected with grid input supply terminal VGS, to provide the feed of grid.
Further, grid feed circuit further includes, the first damped vibration circuit and with the first damped vibration circuit simultaneously
First filter capacitor C4 of connection, the first damped vibration circuit on one side ground connection, the other end are connected with grid power supply input terminal VGS, the
One filter capacitor C4 one end is grounded, and the other end is connected with grid power supply input terminal VGS.
As shown in Figure 2,3, the first damped vibration circuit and the first filter capacitor C4 be connected in parallel on grid power supply input terminal VGS with
Between ground, wherein the effect of the first damped vibration circuit is the damped vibration eliminated in circuit, the self-excitation phenomena in circuit is eliminated；
The effect of first filter capacitor C4 is the ripple signal filtered out on grid power supply input terminal VGS, improves power quality.
Further, the first damped vibration circuit includes first resistor R1, and the first capacitance C3 to connect with resistance R1.
Further, drain electrode feed circuit further includes, the second high impedance line g2 that one end is connected with the second shunt capacitance C8,
The other end of second high impedance line g2 is connected with field-effect transistor V1 drain electrodes.
As shown in Figure 2,3, second shunt capacitance C8 one end is connected to the second high impedance line g2, and the second high impedance line g2 is
Quarter-wave high impedance line, the second shunt capacitance C8 are connected by the drain electrode of the second high impedance line g2 and field-effect transistor V1
Connect, for the radiofrequency signal section equivalent to short circuit, ensure the transmission energy of radiofrequency signal not outward leakage；In addition, the second high impedance
Line g2 is also connected with drain electrode input supply terminal VDS, to provide the feed of drain electrode.
Further, drain electrode feed circuit further include, the second damped vibration circuit and with the second damped vibration circuit simultaneously
Second filter capacitor C6 of connection, the second damped vibration circuit on one side ground connection, the other end are connected with drain power input terminal VDS, the
Two filter capacitor C6 one end are grounded, and the other end is connected with drain power input terminal VDS.
As described in Fig. 2,3, the second damped vibration circuit and the second filter capacitor C6 be connected in parallel on drain power input terminal VDS with
Between ground, wherein the effect of the second damped vibration circuit is the damped vibration eliminated in circuit, the self-excitation phenomena in circuit is eliminated；
The effect of second filter capacitor C6 is the ripple signal filtered out on drain power input terminal VDS, improves power quality.
Similarly, the second damped vibration circuit includes second resistance R2, and the second capacitance connected with second resistance R2
C5。
Further, input signal filter circuit includes the 3rd high impedance line g3, and the 3rd high impedance line g3 one end is grounded, separately
One end is connected with capacitance C1；Capacitance C1 one end is connected with the 3rd high impedance line g3, the other end and the first high impedance line
G1 connections.
As shown in Figure 2,3, input signal filter circuit is first passed through after radiofrequency signal input, it is high which includes the 3rd
Impedance line g3, the 3rd high impedance line g3 are quarter-wave high impedance line, and the 3rd high impedance line g3 one end is grounded, for penetrating
Frequency microwave signal, the 3rd high impedance line g3 are but suitable for low-frequency video signal, the 3rd high impedance line g3 equivalent to open circuit
In short circuit, therefore the low-frequency video signal in input signal can be effective filtered out, avoid previous stage low-frequency video signal and let out
Reveal the influence to this grade of amplifier and integrated circuit stability；
In addition, the other end in the 3rd high impedance line g3 is connected to capacitance C1, for frequency microwave signal, blocking electricity
Appearance is equivalent to 50 Ω, and equivalent series resistance, which is about that zero point is several, arrives several Ω, smaller to frequency microwave effect of signals, but for low frequency
Its equiva lent impedance of vision signal is higher, can effectively suppress low-frequency video signal (the mainly transmission of direct current signal), avoid
Direct current signal leakage influences the power amplifier of previous stage or other device.Calculation formula is as follows：
Capacitor equivalent series resistance calculation formula：
RC=1/ (ω c) is (assuming that capacitance 10 × 10-12)(1)
For radiofrequency signal：
π f=2 × 3.14 × 100 × 10 of ω=29=6.28 × 10 × 109
(2) (assuming that rf frequency is 10 × 109)
RC=1/ (6.28 × 10 × 109×10×10-12)=1/ (6.28 × 10-1)≈1.6
(3)
For low-frequency video signal：
π f=2 × 3.14 × 10 × 10 of ω=23=6.28 × 10 × 103
(4) (assuming that Frequency is 10 × 103)
RC=1/ (6.28 × 10 × 103×10×10-12)=1/ (6.28 × 10-7)≈1.6×107
(5)
Similarly, output signal filter circuit includes the 4th high impedance line g4, and the 4th high impedance line g4 one end ground connection is another
End is connected with capacitance C7；Capacitance C7 one end is connected with high impedance line g4, and the other end is connected with the second high impedance line g2.
As shown in Figure 2,3, radiofrequency signal exports after amplification and first passes through output signal filter circuit, the signal filtered electrical
Road is quarter-wave high impedance line including the 4th high impedance line g4, the 4th high impedance line g2, the 4th high impedance line g4 mono-
End ground connection, for frequency microwave signal, the 4th high impedance line g4 is equivalent to open circuit, but for low-frequency video signal, the 4th
High impedance line g4 can effective filter out the low-frequency video signal in input signal equivalent to short circuit, avoid this level and put
The low-frequency video signal of big device reveals the influence to next stage amplifier and integrated circuit stability；
In addition, the other end in the 4th high impedance line g4 is connected to capacitance C7, for frequency microwave signal, blocking electricity
Appearance is equivalent to 50 Ω, and equivalent series resistance, which is about that zero point is several, arrives several Ω, smaller to frequency microwave effect of signals, but for low frequency
Its equiva lent impedance of vision signal is higher, prevents the flip-flop in circuit from directly being exported by output port, causes the external world
The damage for the equipment being connected with amplifier.
Preferably, the substrate B ends of field-effect transistor V1 and source electrode be altogether.
A kind of the field-effect transistor pulse power amplifier and conventional amplifiers of the application is surveyed in the case of different temperatures
During examination, debug time, signal-to-noise ratio, the contrast of design bandwidth and batch productibility are as shown in table 1, first, field-effect transistor
The signal-to-noise ratio of pulse power amplifier improves, and bandwidth improves, and debugging amount is reduced；Secondly, the uniformity of high and low temperature environment is preferable, can
Improved by property, be suitable for producing in batches.
1 the application amplifier of table and conventional amplifiers test comparison
Embodiment one
Since a kind of field-effect transistor pulse power amplifier of the application design is universal circuit, model is used
Enclose extensively, as a kind of preferred embodiment, when working frequency is 10GHz, the corresponding device and plate of selection are as follows：
If amplifier circuit is printed using 5880 plate of Rogers, thickness of slab 30mil, dielectric constant 2.2, then four/ripple
The length of long line g1, g2, g3, g4 select 6.5mm, and width selects 0.5mm, and equiva lent impedance about 130 Ω, R1, R2 select 50 Ω electricity
Resistance, C3, C5 select 100PF capacitances, and C4, C6 select 1000PF capacitances, and C1, C2, C7, C8 select the high Q of ATC producer 600S series
It is worth capacitance, capacitance 100PF.
Claims (10)
1. a kind of field-effect transistor pulse power amplifier, including field-effect transistor V1, the field-effect transistor V1's
The grid feed circuit and input signal filter circuit for providing gate bias voltage, the field-effect are connected with grid
The drain electrode feed circuit and output signal filter circuit for providing drain bias voltage are connected with the drain electrode of transistor V1,
It is characterized in that, the grid feed circuit includes the first shunt capacitance C2, the first shunt capacitance C2 one end ground connection is another
End is connected with the grid of the field-effect transistor V1；The drain electrode feed circuit includes the second shunt capacitance C8, and described second
Shunt capacitance C8 one end is grounded, and the other end is connected with the drain electrode of the field-effect transistor V1.
2. field-effect transistor pulse power amplifier as claimed in claim 1, it is characterised in that the grid feed circuit
Further include the first high impedance line g1 that one end is connected with the first shunt capacitance C2, the other end of the first high impedance line g1
It is connected with the field-effect transistor V1 grids.
3. field-effect transistor pulse power amplifier as claimed in claim 1, it is characterised in that the grid feed circuit
Further include the first damped vibration circuit and the first filter capacitor C4 with the first damped vibration circuit in parallel, first damping
Oscillating circuit one end is grounded, and the other end is connected with the grid power supply input terminal VGS, and the first filter capacitor C4 mono- is terminated
Ground, the other end are connected with the grid power supply input terminal VGS.
4. field-effect transistor pulse power amplifier as claimed in claim 3, it is characterised in that first damped vibration
Circuit includes first resistor R1, and the first capacitance C3 to connect with the resistance R1.
5. field-effect transistor pulse power amplifier as claimed in claim 1, it is characterised in that the drain electrode feed circuit
Further include the second high impedance line g2 that one end is connected with the second shunt capacitance C8, the other end of the second high impedance line g2
Drain and connect with the field-effect transistor V1.
6. field-effect transistor pulse power amplifier as claimed in claim 1, it is characterised in that the drain electrode feed circuit
Further include the second damped vibration circuit and the second filter capacitor C6 with the second damped vibration circuit in parallel, second damping
Oscillating circuit one end is grounded, and the other end is connected with the drain power input terminal VDS, and the second filter capacitor C6 mono- is terminated
Ground, the other end are connected with the drain power input terminal VDS.
7. field-effect transistor pulse power amplifier as claimed in claim 6, it is characterised in that second damped vibration
Circuit includes second resistance R2, and the second capacitance C5 to connect with the second resistance R2.
8. field-effect transistor pulse power amplifier as claimed in claim 2, it is characterised in that the input signal filtering
Circuit includes the 3rd high impedance line g3, the 3rd high impedance line g3 one end ground connection, and the other end is connected with capacitance C1；It is described
Capacitance C1 one end is connected with the 3rd high impedance line g3, and the other end is connected with the first high impedance line g1.
9. field-effect transistor pulse power amplifier as claimed in claim 5, it is characterised in that the output signal filtering
Circuit includes the 4th high impedance line g4, the 4th high impedance line g4 one end ground connection, and the other end is connected with capacitance C7；It is described
Capacitance C7 one end is connected with high impedance line g4, and the other end is connected with the second high impedance line g2.
10. field-effect transistor pulse power amplifier as claimed in claim 1, it is characterised in that the field effect transistor
The substrate B ends of pipe V1 and source electrode are altogether.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721770932.XU CN207368982U (en) | 2017-12-18 | 2017-12-18 | A kind of field-effect transistor pulse power amplifier |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721770932.XU CN207368982U (en) | 2017-12-18 | 2017-12-18 | A kind of field-effect transistor pulse power amplifier |
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| Publication Number | Publication Date |
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| CN207368982U true CN207368982U (en) | 2018-05-15 |
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| CN201721770932.XU Active CN207368982U (en) | 2017-12-18 | 2017-12-18 | A kind of field-effect transistor pulse power amplifier |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109039290A (en) * | 2018-07-05 | 2018-12-18 | 电子科技大学 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
-
2017
- 2017-12-18 CN CN201721770932.XU patent/CN207368982U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109039290A (en) * | 2018-07-05 | 2018-12-18 | 电子科技大学 | The lamped element power synthesis amplifier of suspended substrate stripline is integrated based on medium |
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