CN107124145A - Mesh power pipe in a kind of automatic biasing - Google Patents
Mesh power pipe in a kind of automatic biasing Download PDFInfo
- Publication number
- CN107124145A CN107124145A CN201710196137.2A CN201710196137A CN107124145A CN 107124145 A CN107124145 A CN 107124145A CN 201710196137 A CN201710196137 A CN 201710196137A CN 107124145 A CN107124145 A CN 107124145A
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- China
- Prior art keywords
- electric capacity
- inductance
- circuit
- resistance
- power pipe
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Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/52—Circuit arrangements for protecting such amplifiers
- H03F1/523—Circuit arrangements for protecting such amplifiers for amplifiers using field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
- H03F3/193—High frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F2200/00—Indexing scheme relating to amplifiers
- H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
Abstract
The present invention relates to mesh power pipe in a kind of automatic biasing, including input matching circuit, P0 tube cores, output matching circuit and auto bias circuit；Advantages of the present invention：1）Interior matching is realized using distributed inductance and electric capacity, the volume of power tube is reduced；2）Auto bias circuit is powered using single supply, compared with traditional double power supply circuit, is powered up only with a positive voltage, using more convenient；3）Auto bias circuit grid is direct current, and RC circuits in parallel are to ground all the way for source series, and wherein resistance gives device offer transient protective, and electric capacity can weaken the influence of pad negative-feedback, improve the stability of device；Using single supply auto bias circuit, the interior mesh power pipe of making have small volume, stability it is high, using facilitating the features such as.
Description
Technical field
The present invention relates to a kind of self-bias of mesh power pipe performance in raising of use single supply automatic biasing structure
Interior mesh power pipe is put, belongs to technical field of semiconductors.
Background technology
Microwave power device is the important component in satellite communication system and radar system, and its performance is directly determined
Solid-state radar, electronic warfare and the core capabilities index for communicating machine system, have vital in the field such as national defence and communication
Meaning.Communication system and the demand for development communication band of radar are more and more wider, and volume is less and less, at the same require to have it is higher can
By property.Power amplifier realizes high frequency, broadband, miniaturization, high efficiency, more high-power to whole system as one of important module therein
System is most important.
The power of the demand for development microwave power device of communication system and radar is constantly lifted, therefore total grid width of tube core is got over
Come bigger, the input impedance reduction of chip, the nonloaded Q of device is uprised, directly carried out using external circuit in certain bandwidth
Match extremely difficult, the interior matching technique and power single-chip microwave integrated circuit matched in shell（MMIC）Obtain wide
General application.MMIC has the advantages that high with wide, small volume, uniformity, but development cost is of a relatively high, circuit output loss
Greatly, interior matching technique makes match circuit on a ceramic substrate, and power attenuation is substantially reduced, and is conducive to improving the output of device
Power and power added efficiency.Gallium nitride（GaN）It is wide with forbidden band as the Typical Representative of third generation semiconductor material with wide forbidden band
Degree is big, and breakdown voltage is high, and the advantages of thermal conductivity is high, power density is high, is the preferable material of high temperature, high frequency, HIGH-POWERED MICROWAVES device
Material.GaN device has high impedance feature compared with Si devices, GaAs devices simultaneously, it is easy to matching is realized in wider frequency range,
Had a wide range of applications in communication system and radar system.
In recent years, many articles are it has been reported that mesh power amplifier in the GaN of L, S, C and X and Ku wave bands, research
Focus in high-power output and high efficiency.These power amplifiers are generally using traditional dual power supply power-up mode, it is impossible to
Used in the available occasion of only one of which power supply, and the reliability of biasing circuit has much room for improvement.Therefore need to invent a kind of method,
Using the power-up mode of single supply, realize reliability it is higher, more stable, using more easily microwave power device.
The content of the invention
The present invention proposes mesh power pipe in a kind of automatic biasing, and its purpose is in order to overcome mesh power in traditional dual power supply
The deficiency that pipe is present, the interior volume for matching, reducing power tube is realized using distributed inductance and electric capacity；Power tube uses single supply
Power supply, is powered up only with a positive voltage, using more convenient；Resistance in auto bias circuit provides transient protective, electricity to device
Appearance can weaken the influence of pad negative-feedback, improve the stability of device.
The technical solution of the present invention：Mesh power pipe in a kind of automatic biasing, including input matching circuit, P0 tube cores,
Output matching circuit and auto bias circuit；The input matching circuit is responsible for the input resistant matching of the tube core to 50 Ω；
The output matching circuit is responsible for the output impedance of the tube core being matched to 50 Ω；The auto bias circuit is supplied using single supply
Electricity, external drain voltage Vd, RSOhmically partial pressure Vs and grid pressure difference are Vgs, during the Vgs pressure differences are auto bias circuit
RSThe pressure difference of the grid of ohmically Vs partial pressures and auto bias circuit；The source series of auto bias circuit in parallel RC electricity all the way
Road, RSResistance provides transient protective, the increase of drain current or reduction meeting adjust automatically grid bias to device, makes device electricity
Stream keeps constant, and C1 shunt capacitances realize extremely low impedance, weakens the influence of source pad negative-feedback, and P0 tube cores use 3.6mm
GaN HEMT tube cores, make on sic substrates.
Input matching circuit uses interior match circuit technology, and matching circuit element is produced on ceramic substrate, adopted
With one-level L-type match circuit by the input resistant matching of tube core to 50 Ω, input matching circuit includes C0 electric capacity, L0 inductance and R0
Resistance, a termination 20P capacitances of the C0 electric capacity and one end of L0 inductance, the other end ground connection of C0 electric capacity, the L0 electricity
Sense another termination tube core grid and one end of R0 resistance, R0 resistance the other end ground connection, input signal by 20P every
One end access of straight electric capacity.
Output matching circuit uses interior match circuit technology, and matching circuit element is produced on ceramic substrate, adopted
The output impedance of tube core is matched to 50 Ω with one-level L-type match circuit；Match circuit includes L1 inductance, L2 inductance and C2 electricity
Hold；A termination drain voltage and 1000P shunt capacitances for the L2 inductance, the drain electrode of another pipe nipple core of L2 inductance and L1 electricity
One end of sense, another termination C2 electric capacity of L1 inductance and one end of 80P capacitances, another termination output of 80P capacitances.
In parallel RC circuits are to ground all the way in the source series of P0 tube cores for auto bias circuit, and it is electric that auto bias circuit includes C1
Appearance, R1 resistance, the source electrode and R1 resistance of a pipe nipple core of C1 electric capacity, the other end ground connection of C1 electric capacity, a termination of R1 resistance
The source electrode and C1 electric capacity of tube core, the other end ground connection of R1 resistance.
C0 electric capacity, L0 inductance use microstrip structure, are distributed element.
R0 resistance is film resistor, is made on a ceramic substrate.
C2 electric capacity, L1 inductance, L2 inductance use microstrip structure, are distributed element.
C1 electric capacity is a MOM capacitor, and the underface of the tube core is sintered in using solder.
R1 resistance is film resistor, is made on a ceramic substrate.
Advantages of the present invention：Compared with prior art, have the advantages that：
1）Because the input matching circuit and output matching circuit use interior match circuit technology, using distributed inductance and
Electric capacity realizes matching, matching element is made on a ceramic substrate, the amplifier being made relative to lamped element, its area is significantly
Reduce；
2）Due to adding auto bias circuit structure, it is only necessary to which single supply is powered, using more convenient, and the resistance in automatic biasing
Give device to provide transient protective, the increase of any drain current or reduce all can adjust automatically grid bias so that device
Electric current keeps constant, and the shunt capacitance in auto bias circuit can realize extremely low impedance, at utmost weakens source pad negative anti-
The influence of feedback, therefore greatly improve the performance and stability of power device；
3）Employ interior match circuit technology and add auto bias circuit structure, improve the performance of interior mesh power pipe, make
In mesh power pipe there is smaller volume, using more convenient, stability is higher.
Brief description of the drawings
Fig. 1 is mesh power pipe circuit theory diagrams in a kind of automatic biasing.
Fig. 2 is mesh power pipe domain in a kind of automatic biasing.
Fig. 3 is mesh power tube power output characteristics simulation result in a kind of automatic biasing.
Embodiment
The embodiment to the embodiment of the present invention is further described below in conjunction with the accompanying drawings.
Mesh power pipe in a kind of automatic biasing, its circuit theory diagrams are as shown in figure 1, its domain is as shown in Fig. 2 the interior matching
Power tube is made up of input matching circuit, tube core, output matching circuit and auto bias circuit, and input matching network is responsible for will be described
The input resistant matching of tube core is to 50 Ω；The output matching network is responsible for the output impedance of the tube core being matched to 50 Ω,
Electric resistance partial pressure in the auto bias circuit obtains grid voltage so that interior mesh power pipe only needs an additional drain voltage；Described
Mesh power pipe in a kind of automatic biasing, it is characterised in that：Input matching and output matching are real using distributed inductance and electric capacity
Matched in existing, the small volume of power tube, while adding auto bias circuit so that power tube only need to be using single supply power-up, should
With more convenient, the shunt capacitance in auto bias circuit can realize extremely low impedance, at utmost weaken source pad negative-feedback
Influence, therefore greatly improve the performance and stability of power device.
The input matching circuit realizes interior matching using distributed inductance and electric capacity, and matching element is produced on into ceramic base
On piece.Input matching is using one-level LC matchings, by the input resistant matching of tube core to 50 Ω, including C0 electric capacity and L0 inductance, institute
State a termination 20P capacitances and one end of L0 inductance, the other end ground connection of C0 electric capacity, the other end of L0 inductance of C0 electric capacity
The grid of the tube core and one end of R0 resistance are connect, the other end ground connection of the R0 resistance, input signal passes through 20P capacitances
One end access.
C0 electric capacity, L0 inductance use microstrip structure, are distributed element, and C0 electric capacity is produced on dielectric constant 85, thickness 180
μm ceramic substrate on, L0 inductance is produced on dielectric constant 9.6, on the ceramic substrate of 380 μm of thickness.R0 resistance is thin-film electro
Resistance, improves the stability of power tube.
Mesh power pipe in automatic biasing in the present embodiment, output matching circuit is realized interior using distributed inductance and electric capacity
Matching, matching element is made on a ceramic substrate.Output matching circuit is matched using one-level LC, by the output impedance of tube core
It is assigned to 50 Ω, including L1 inductance, L2 inductance and C2 electric capacity；A termination drain voltage and 1000P shunt capacitances for the L2 inductance,
The drain electrode of another termination P0 tube cores of L2 inductance and one end of L1 inductance, another termination C2 electric capacity and 80P the blockings electricity of L1 inductance
One end of appearance, another termination output of 80P capacitances.Wherein L1 inductance, L2 inductance and C2 electric capacity use microstrip structure, to divide
Cloth element, C2 electric capacity is produced on dielectric constant 85, on the ceramic substrate of 180 μm of thickness, and L1 inductance, L2 inductance are produced on dielectric
On constant 9.6, the ceramic substrate of 380 μm of thickness.Inductance L2 has very high impedance in working frequency range, prevents RF signals from passing through inclined
Put net leakage, and the influence to biasing circuit can be ignored.
Mesh power pipe in automatic biasing in the present embodiment, auto bias circuit is in parallel all the way in the source series of the tube core
RC circuits to ground, auto bias circuit include C1 electric capacity, R1 resistance, the source electrode and R1 resistance of a pipe nipple core of C1 electric capacity, C1
The other end ground connection of electric capacity, the source electrode and C1 electric capacity of a pipe nipple core of R1 resistance, the other end ground connection of R1 resistance.The R1 electricity
Hinder for film resistor, make on a ceramic substrate, C1 electric capacity is a big MOM capacitor, and the tube core is sintered in using solder
Underface.
Tube core described in the present embodiment uses total grid width for 3.6mm GaN HEMT tube cores, singly refers to grid width for 120 μm, system
Make on sic substrates, under 28V drain voltages, load balance factor test result shows that the tube core has 4W/mm power output close
Spend, mesh power pipe in the automatic biasing in the present embodiment, the reasonable arrangement layout such as potsherd, tube core, shunt capacitance, using 280
DEG C golden tin solder is sintered in JF04F001 shells, and uses 25 μm of gold wire bonding, and circuit package size is 20.8mm ╳
12.1mm.Mesh power pipe in a kind of automatic biasing in the present invention is illustrated in figure 3 to export in the case where drain voltage Vd is 28V
Power（Pout）And added efficiency（PAE）Test result, it is defeated in 350MHz ~ 450MHz frequency ranges from figure it was found from result
Go out power and reach more than 10W, maximum output is 11.6W during 450MHz, and power gain is 20.6dB, and gain flatness is about
± 0.4dB, each point power added efficiency is more than 55%, and peak reaches 65%.
Described above is only preferred embodiment, it should be pointed out that：For the those of ordinary skill of technical field, not
On the premise of departing from the principle of the invention, some improvements and modifications can also be made, these improvements and modifications also should be regarded as the present invention
Protection domain.
Claims (9)
1. mesh power pipe in a kind of automatic biasing, it is characterized in that including input matching circuit, P0 tube cores, output matching circuit and
Auto bias circuit；The input matching circuit is responsible for the input resistant matching of the tube core to 50 Ω；The output matching electricity
It is responsible for the output impedance of the tube core being matched to 50 Ω in road；The auto bias circuit is powered using single supply, external drain voltage
Vd, RSOhmically partial pressure Vs and grid pressure difference are Vgs, and the Vgs pressure differences are the R in auto bias circuitSOhmically Vs
The pressure difference of the grid of partial pressure and auto bias circuit；The source series of auto bias circuit in parallel RC circuits, R all the waySResistance is to device
Part provides transient protective, the increase of drain current or reduction meeting adjust automatically grid bias, device current is kept constant, C1
Shunt capacitance realizes extremely low impedance, weakens the influence of source pad negative-feedback, and P0 tube cores use 3.6mm GaN HEMT tube cores, system
Make on sic substrates.
2. mesh power pipe in a kind of automatic biasing according to claim 1, it is characterized in that input matching circuit is using interior
With circuit engineering, matching circuit element is produced on ceramic substrate, using one-level L-type match circuit by the input of tube core
Impedance matching is to 50 Ω, and input matching circuit includes C0 electric capacity, L0 inductance and R0 resistance, a termination 20P of the C0 electric capacity every
One end of straight electric capacity and L0 inductance, the other end ground connection of C0 electric capacity, the grid of another termination tube core of the L0 inductance and
One end of R0 resistance, the other end ground connection of R0 resistance, input signal is accessed by one end of 20P capacitances.
3. mesh power pipe in a kind of automatic biasing according to claim 1, it is characterized in that output matching circuit is using interior
With circuit engineering, matching circuit element is produced on ceramic substrate, using one-level L-type match circuit by the output of tube core
Impedance matching is to 50 Ω；Match circuit includes L1 inductance, L2 inductance and C2 electric capacity；The L2 inductance one termination drain voltage and
1000P shunt capacitances, the drain electrode of another pipe nipple core of L2 inductance and one end of L1 inductance, another termination C2 electric capacity of L1 inductance
With one end of 80P capacitances, another termination of 80P capacitances is exported.
4. mesh power pipe in a kind of automatic biasing according to claim 1, it is characterized in that auto bias circuit is in P0 tube cores
In parallel RC circuits are to ground all the way for source series, and auto bias circuit includes C1 electric capacity, R1 resistance, a pipe nipple core of C1 electric capacity
Source electrode and R1 resistance, C1 electric capacity the other end ground connection, the source electrode and C1 electric capacity of a pipe nipple core of R1 resistance, R1 resistance it is another
End ground connection.
5. mesh power pipe in a kind of automatic biasing according to claim 2, it is characterized in that C0 electric capacity, L0 inductance use micro-strip
Structure, is distributed element, and C0 electric capacity is produced on dielectric constant 85, on the ceramic substrate of 180 μm of thickness, and L0 inductance is produced on Jie
On electric constant 9.6, the ceramic substrate of 380 μm of thickness.
6. mesh power pipe in a kind of automatic biasing according to claim 2, it is characterized in that R0 resistance is film resistor, makes
On a ceramic substrate.
7. mesh power pipe in a kind of automatic biasing according to claim 3, it is characterized in that C2 electric capacity, L1 inductance, L2 inductance
It is distributed element using microstrip structure, C2 electric capacity is produced on dielectric constant 85, on the ceramic substrate of 180 μm of thickness, L1 electricity
Sense, L2 inductance are produced on dielectric constant 9.6, on the ceramic substrate of 380 μm of thickness.
8. mesh power pipe in a kind of automatic biasing according to claim 4, it is characterized in that C1 electric capacity is a MOM capacitor,
The underface of the tube core is sintered in using solder.
9. mesh power pipe in a kind of automatic biasing according to claim 4, it is characterized in that R1 resistance is film resistor, makes
On a ceramic substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710196137.2A CN107124145A (en) | 2017-03-29 | 2017-03-29 | Mesh power pipe in a kind of automatic biasing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710196137.2A CN107124145A (en) | 2017-03-29 | 2017-03-29 | Mesh power pipe in a kind of automatic biasing |
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| Publication Number | Publication Date |
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| CN107124145A true CN107124145A (en) | 2017-09-01 |
Family
ID=59718092
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710196137.2A Pending CN107124145A (en) | 2017-03-29 | 2017-03-29 | Mesh power pipe in a kind of automatic biasing |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860166A (en) * | 2019-03-08 | 2019-06-07 | 成都嘉晨科技有限公司 | Interior matching gallium nitride multi-chip integrated power amplification module |
| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11195936A (en) * | 1998-01-06 | 1999-07-21 | Mitsubishi Electric Corp | Microwave amplifier circuit |
| JPH11340747A (en) * | 1998-05-29 | 1999-12-10 | New Japan Radio Co Ltd | Mmic low noise amplifier |
| JP2003198267A (en) * | 2001-12-27 | 2003-07-11 | Mitsubishi Electric Corp | Amplifier |
| US20110090013A1 (en) * | 2009-10-21 | 2011-04-21 | Renesas Electronics Corporation | Field-effect transistor amplifier |
| CN104158500A (en) * | 2013-05-14 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | Radio frequency power amplifier |
| US20150008980A1 (en) * | 2013-07-05 | 2015-01-08 | Samsung Electronics Co., Ltd. | Apparatus and method for matching harmonics |
| CN105634416A (en) * | 2015-12-25 | 2016-06-01 | 中国电子科技集团公司第五十五研究所 | Internal matching power tube |
-
2017
- 2017-03-29 CN CN201710196137.2A patent/CN107124145A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11195936A (en) * | 1998-01-06 | 1999-07-21 | Mitsubishi Electric Corp | Microwave amplifier circuit |
| JPH11340747A (en) * | 1998-05-29 | 1999-12-10 | New Japan Radio Co Ltd | Mmic low noise amplifier |
| JP2003198267A (en) * | 2001-12-27 | 2003-07-11 | Mitsubishi Electric Corp | Amplifier |
| US20110090013A1 (en) * | 2009-10-21 | 2011-04-21 | Renesas Electronics Corporation | Field-effect transistor amplifier |
| CN104158500A (en) * | 2013-05-14 | 2014-11-19 | 上海华虹宏力半导体制造有限公司 | Radio frequency power amplifier |
| US20150008980A1 (en) * | 2013-07-05 | 2015-01-08 | Samsung Electronics Co., Ltd. | Apparatus and method for matching harmonics |
| CN105634416A (en) * | 2015-12-25 | 2016-06-01 | 中国电子科技集团公司第五十五研究所 | Internal matching power tube |
Non-Patent Citations (1)
| Title |
|---|
| 梁俊杰 等: "自偏置低噪放的设计与改进", 《电子技术应用》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109860166A (en) * | 2019-03-08 | 2019-06-07 | 成都嘉晨科技有限公司 | Interior matching gallium nitride multi-chip integrated power amplification module |
| CN111682859A (en) * | 2020-07-09 | 2020-09-18 | 西安电子科技大学 | Power amplifier of low-power consumption AB class CMOS |
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Application publication date: 20170901 |
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