CN113114129A - Novel chip-loading type internal matching power amplifier - Google Patents
Novel chip-loading type internal matching power amplifier Download PDFInfo
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- CN113114129A CN113114129A CN202110451389.1A CN202110451389A CN113114129A CN 113114129 A CN113114129 A CN 113114129A CN 202110451389 A CN202110451389 A CN 202110451389A CN 113114129 A CN113114129 A CN 113114129A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/42—Modifications of amplifiers to extend the bandwidth
- H03F1/48—Modifications of amplifiers to extend the bandwidth of aperiodic amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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Abstract
The invention relates to a microwave integrated circuit chip group technology based on metal carrier plate integration. A plurality of chips, matching circuits and bias circuits are integrated on a metal carrier plate in a high density, and all components are interconnected through gold wires so as to realize a chip set product with independent functions. The invention saves the packaging material and the packaging process of the integrated circuit, reduces the raw materials, greatly reduces the size and the weight and reduces the cost. In addition, the carrier plate is welded on the component substrate through the solder, so that the problem of temperature rise of the device caused by the power density rise of the power amplifier along with the development of the technology is greatly relieved.
Description
Technical Field
The invention discloses a novel chip-loading type internal matching power amplifier, and belongs to the technical field of power amplification.
Background
With the development of the third generation semiconductor GaN device technology, GaN microwave devices are developed more and engineering applications are started. However, the conventional power device needs to be packaged by a package, and the package is generally large in size and weight, so that the power amplifier packaged by the package is relatively limited for modern electronic equipment, communication systems and platforms with relatively high weight requirements.
Because the power amplifier is mainly used for phased array radar transmitters, thousands of power amplifiers are integrated in one radar, and in the field of aircraft and carrier-borne, the requirement on the weight of the power amplifier is strict, for example, the phased array of a 2048-channel array surface is taken as an example, the assembled power amplifier is 2048 large, and for application platforms with strict weight requirements such as aircraft and carrier-borne, the power amplifier packaged by two thousands of tube shells has huge volume and mass, while the huge mass has higher energy consumption, and the huge volume has more inconvenient transportability and maneuverability.
Disclosure of Invention
The invention provides a novel internal matching, which aims to overcome the defects of the prior art in the aspects of volume, weight and the like aiming at the problems existing at present and provides a miniaturized microwave chip-mounted internal matching power amplifier. The amplifier has the advantages of low cost, small packaging size, light weight and the like, and provides powerful technical support for further realizing the miniaturization of an electronic system.
The technical solution of the invention is as follows: a novel chip-loading type internal matching power amplifier is combined and output by two paths and structurally comprises two GaN power tubes, two groups of internal matching passive input circuits and two groups of internal matching passive output circuits, wherein each group of internal matching passive input circuits comprises an impedance matching circuit, a grid biasing circuit and an isolation resistor, and each group of internal matching passive output circuits comprises an impedance matching circuit, a drain biasing circuit and an isolation resistor; the GaN power tube, the internal matching passive input circuit and the internal matching passive output circuit are all integrated on the same slide, and all components are interconnected through gold wires.
One end of the internal matching passive input circuit is connected with a C2 capacitor in series and is connected with the input port through a gold wire, the other end of the internal matching passive input circuit is connected with a C6a grounding capacitor and a C6b grounding capacitor in parallel through the gold wire and is connected to the input end of the GaN power tube core in series through the gold wire.
One end of the internal matching passive output circuit is connected with a C5 capacitor in series and is connected to an output port through a gold wire, the other end of the internal matching passive output circuit is connected with a C7a grounding capacitor and a C7b grounding capacitor in parallel through the gold wire and is connected to the output end of the GaN power tube core through the gold wire in series.
One end of the impedance matching circuit is connected with the input end and the output end of the circuit, and the other end of the impedance matching circuit is connected with the GaN power tube through a gold wire; the internal matching passive input circuit is connected with an R2 isolation resistor in series, the internal matching passive output circuit is connected with an R3 isolation resistor in series, and the R2 isolation resistor and the R3 isolation resistor are film resistors and isolate an upper power tube from a lower power tube; the grid biasing circuit is connected with the thin film resistor in series, so that the low-frequency stability of the circuit is improved, the grounding capacitor is connected in parallel, and power clutter is filtered.
The bias circuit is a quarter-wave choke line, is connected with the matching circuit through a gold wire, and is connected with a C1 grounding capacitor, a C3 grounding capacitor and a C4 grounding capacitor in parallel through the gold wire.
The connection point of the C1 grounding capacitor, the C3 grounding capacitor and the C4 grounding capacitor is as close to the input and output end capacitors as possible.
The slide glass is a molybdenum-copper slide glass.
The GaN power tube is a GaN HEMT tube core.
The isolation resistor, the impedance matching circuit and the grid biasing circuit are all manufactured on a ceramic substrate, and the ceramic substrate is 99.6% of alumina ceramic.
The GaN power tube is a GaN HEMT tube core, the input ends of the two GaN power tubes are connected with a C6a multi-electrode type single-layer grounding capacitor and a C6b multi-electrode type single-layer grounding capacitor through gold wires, then the gold wires are led out from the C6a multi-electrode type single-layer capacitor to be connected with an internal matching passive input circuit 101, the internal matching passive input circuit 101 is manufactured on a ceramic substrate and comprises a C2 capacitor, a synthesis network with an impedance transformation function and an R2 isolation resistor, and the R2 isolation resistor is based on a thin film resistor on a ceramic plate; the internal matching passive input circuit is connected with the input port through a gold wire led out from a C2 capacitor; similarly, the output end of the GaN HEMT tube core is connected with a C7a multi-electrode type single-layer grounding capacitor and a C7b multi-electrode type single-layer grounding capacitor through gold wires, then gold wires are led out to be connected with an internal matching passive output circuit 102, the internal matching passive output circuit 102 is manufactured on a ceramic substrate and comprises a C5 capacitor, a synthesis network with an impedance transformation function and an R3 isolation resistor, and the R3 isolation resistor is based on a thin film resistor on a ceramic plate; the low-frequency stability of the circuit is improved by the peripheral grid bias circuit through a resistor R1 connected in series, one end of the grid bias circuit is connected with a grid power supply after being connected with a C1 grounded capacitor in parallel through a gold wire, and the other end of the grid bias circuit is connected to the internal matching passive input circuit 101 through the gold wire; after one end of the drain bias circuit is connected with a C3 grounding capacitor and a C4 grounding capacitor in parallel, the drain power supply is connected, and the other end of the drain bias circuit is connected with the internal matching passive output circuit 102.
The invention has the beneficial effects that:
1) because the slide-type power amplifier is not provided with a packaging tube shell, all chips and components are exposed on one slide, the circuit design is more flexible, and the requirements under different situations can be met.
2) The size of the chip-on-chip power amplifier is a dozen of times of the size of the traditional tube shell package, so that the assembly space of the device is greatly saved, and the weight of the device is reduced.
3) The slide glass adopts molybdenum copper, has a similar thermal expansion coefficient with GaN, is more difficult to break compared with oxygen-free copper under high and low temperature environments, simultaneously keeps higher thermal conductivity, is more beneficial to heat dissipation of devices due to a natural exposed structure, keeps thermal stability of the devices,
4) the input impedance is low due to the large size of the tube core of the high-power amplifier, and the matching difficulty is reduced and the low-frequency stability and the in-band stability are improved by integrating the synthesis network with impedance transformation on the input circuit.
5) The input and output ends of the tube core are interconnected with the ceramic thin film circuit through gold wires to form an inductor, and then are grounded in series with the multi-electrode type single-layer capacitor, so that the adjustability of the circuit is improved, the second harmonic is restrained, and the output capacity of the power amplifier is optimized.
Drawings
FIG. 1 is a schematic diagram of a slide-type internal-matching power tube circuit;
fig. 2 is a circuit layout of a chip-on-chip internal matching power transistor.
In the figure, C1, C2, C3, C4, C5, C6a, C6b, C7a and C7b are capacitors, 101 and 102 are circuits, R1, R2 and R3 are resistors, 4 is a GaN power tube, and 1 is a carrier chip.
Detailed Description
A chip-on-chip type internal matching amplifier circuit is miniaturized by mounting a power chip, an impedance matching circuit, a bias circuit, and the like on a package carrier at high density and interconnecting the components by gold wires. Meanwhile, a limited design space is utilized, a smart structure of a separated compensation capacitor and a separated compensation inductor is provided, the design modes are more flexible and diversified, and the separated structure reduces the length of the gold wire, so that the inductance of the gold wire is reduced. Meanwhile, the capacitance value is flexibly adjusted through the gold wire, and the short circuit capacity of the amplifier to the second harmonic is improved, so that the radio frequency efficiency of the amplifier is improved.
With the increasing power demand of modern electronic systems, solid-state power amplifiers need to improve power output capability, and usually two or more GaN power transistors are connected in parallel to output power through a power synthesis technology. The invention uses two large grid width GaN power tubes in parallel, connects each pre-matched unit with each other through capacitance in LC circuit by gold wire, meanwhile, the GaN tube core is connected with each other by the same method, the output ends of two GaN power tubes are connected with pre-matched output circuit by gold wire in parallel, and then connected with synthesis network by the output end.
The structure comprises a slide glass, a GaN power tube, 1 and 2 groups of internal matching passive input circuits and 1 and 2 groups of internal matching passive output circuits, wherein each group of internal matching passive input circuits comprises an impedance matching circuit, a grid bias circuit and an isolation resistor R2. Each group of internal matching passive output circuits comprises an impedance matching circuit, a drain electrode biasing circuit and an isolation resistor R3.
The power transistor is a GaN HEMT tube core. One end of the impedance matching circuit is connected with an input (output) port, and the other end of the impedance matching circuit is connected with a power tube through a gold wire (BW); the resistors R2 and R3 are thin film resistors based on a ceramic substrate, and the resistors isolate an upper power tube from a lower power tube. The grid biasing circuit is connected with the thin film resistor in series, so that the low-frequency stability of the circuit is improved; the parallel capacitor is grounded to filter the clutter of the power supply. The drain electrode biasing circuit is connected with a capacitor in parallel and is grounded, and power clutter is filtered.
The slide glass is made of molybdenum and copper;
one end of the passive input circuit is connected with a capacitor C2 in series and is connected with an input port through a gold wire, the other end of the passive input circuit is connected with grounded capacitors C6a and C6b in parallel through the gold wire and is connected with the input end of the tube core through the gold wire in series;
one end of the passive output circuit is connected with a capacitor C5 in series and is connected with an output port through a gold wire, the other end of the passive output circuit is connected with grounded capacitors C7a and C7b in parallel through the gold wire and is connected with the output end of the tube core through the gold wire in series;
integrating a chip, a matching circuit and a biasing circuit on the same chip;
the bias circuit is a quarter-wave choke line and is connected with the matching circuit through a gold wire. Simultaneously, the capacitors C1, C3 and C4 are connected in parallel through gold wires;
all the film resistors, the impedance transformation circuit and the bias circuit are manufactured on a ceramic substrate, and the ceramic substrate is 99.6% of alumina ceramic.
The technical scheme of the invention is further explained by combining the attached drawings
The amplifier schematic diagram is shown in fig. 1, the novel chip-loaded internal matching power amplifier is formed by two paths of combined output, the input ends of two GaN HEMT tube cores 4 are connected with multi-electrode type single-layer grounding capacitors C6a and C6b through gold wires BW, gold wires are led out from the multi-electrode type single-layer capacitor C6a to be connected with an input pre-matching circuit 101, the input pre-matching circuit (101) is manufactured on a ceramic substrate and consists of a capacitor C2, a synthesis network with an impedance conversion function and an isolation resistor R2, and the resistor R2 is based on a thin film resistor on the ceramic substrate; the input pre-matching circuit 101 is connected to the input port through a gold wire led out from the capacitor C2. Similarly, the output end of the GaN HEMT die 4 is connected with multi-electrode single-layer grounding capacitors C7a and C7b through gold wires BW, gold wires are led out from the multi-electrode single-layer capacitors C7a and C7b to be connected with an input pre-matching circuit 102, the input pre-matching circuit 102 is manufactured on a ceramic substrate and consists of a capacitor C5, a synthesis network with an impedance transformation function and an isolation resistor R3, and the resistor R3 is based on a thin film resistor on a ceramic plate. The resistors R2 and R3 are used as isolation capacitors, so that the isolation between the two dies is improved, and the crosstalk of signals is prevented. The low-frequency stability of the circuit is increased by the peripheral grid bias circuit through a series resistor R1, one end of the grid bias circuit is connected with a ground capacitor C1 in parallel through a gold wire and then connected with a grid power supply, and the other end of the grid bias circuit is connected to the matching circuit 101 through the gold wire; after one end of the drain bias circuit is connected in parallel to the capacitors C3 and C4, the drain power supply is connected, and the other end is connected to the matching circuit 102. The capacitors C1, C3 and C4 are power supply filter capacitors, which can prevent the influence of power supply noise waves on the circuit, and meanwhile, the drain-source bias line does not participate in matching, so that the position of the connection with the matching circuit is not required, but the connection point is as close to the input-output end capacitor as possible, and the attractive and symmetrical effect is achieved.
The circuit board is shown in figure 2, the capacitor, the pre-matching circuit and the tube core are all welded on the molybdenum-copper slide plate, good heat dissipation is achieved, meanwhile, the appropriate thermal expansion coefficient of the molybdenum-copper material can be matched with that of the GaN tube core, and reliability of the device is improved. The input and output ends are connected with external equipment through gold wires. The built-in power supply bias line is a quarter-wavelength choke line, so that the direct current power supply of the tube core is realized, the direct current power supply does not participate in matching, and the microwave signal is isolated from being transmitted into a low-frequency circuit.
As for the pre-matching circuit 101, because the circuit is a high-power die and has a millimeter-scale grid width, and the grid width is inversely proportional to the input end characteristic impedance, the input characteristic impedance of the die is very small and is not suitable for being directly matched to 50 ohms, so the input impedance of the die is matched to 10 ohms through an LC network formed by capacitors C6a and C6b and a gold wire, impedance transformation is realized through the input pre-matching circuit 101, 10 ohms is matched to 50 ohms, better matching is realized, and meanwhile, a large capacitor C2 is amplified at the input end to isolate low-frequency signals from being transmitted into a signal source. And the resistor connected in series on the bias circuit can greatly reduce the possibility that the die is unstable at low frequency to generate self-oscillation. Similarly, the same is true of the output pre-match circuit 102.
The above description is only of the preferred embodiments of the present invention, and it should be noted that: it will be apparent to those skilled in the art that various modifications and adaptations can be made without departing from the principles of the invention and these are intended to be within the scope of the invention.
Claims (10)
1. A novel chip-loading type internal matching power amplifier is characterized in that the chip-loading type internal matching power amplifier is combined and output by two paths, and structurally comprises two GaN power tubes, two groups of internal matching passive input circuits and two groups of internal matching passive output circuits, wherein each group of internal matching passive input circuits comprises an impedance matching circuit, a grid electrode biasing circuit and an isolation resistor, and each group of internal matching passive output circuits comprises an impedance matching circuit, a drain electrode biasing circuit and an isolation resistor; the GaN power tube, the internal matching passive input circuit and the internal matching passive output circuit are all integrated on the same slide, and all components are interconnected through gold wires.
2. The new chip-on-chip type internal matching power amplifier as claimed in claim 1, wherein one end of said internal matching passive input circuit is serially connected to a capacitor C2 through gold wire and connected to the input port, and the other end is serially connected to a capacitor C6a and a capacitor C6b through gold wire and connected to the input end of the GaN power transistor die through gold wire.
3. The new chip-on-chip type internal matching power amplifier as claimed in claim 1, wherein one end of said internal matching passive output circuit is serially connected to a capacitor C5 through gold wire and connected to the output port, and the other end is serially connected to a capacitor C7a and a capacitor C7b through gold wire and connected to the output end of the GaN power transistor die through gold wire.
4. The novel chip-on-chip internal matching power amplifier as claimed in claim 1, wherein one end of the impedance matching circuit is connected to the input and output ends of the circuit, and the other end is connected to the GaN power tube through a gold wire; the internal matching passive input circuit is connected with an R2 isolation resistor in series, the internal matching passive output circuit is connected with an R3 isolation resistor in series, and the R2 isolation resistor and the R3 isolation resistor are film resistors and isolate an upper power tube from a lower power tube; the grid biasing circuit is connected with the thin film resistor in series, so that the low-frequency stability of the circuit is improved, the grounding capacitor is connected in parallel, and power clutter is filtered.
5. The new chip carrier type internal matching power amplifier as claimed in claim 1, wherein said bias circuit is a quarter-wave choke line connected to the matching circuit through gold wire, and connected in parallel with a C1 grounding capacitor, a C3 grounding capacitor, and a C4 grounding capacitor through gold wire.
6. The new chip-on-chip internally matched power amplifier as claimed in claim 5, wherein the connection point of the C1 ground capacitor, the C3 ground capacitor and the C4 ground capacitor is as close as possible to the I/O terminal capacitor.
7. The novel chip carrier internal matching power amplifier as claimed in claim 1, wherein said chip carrier is a molybdenum-copper chip carrier.
8. The novel chip on chip internally matched power amplifier as claimed in claim 1, wherein said GaN power transistor is a GaN HEMT die.
9. The novel chip-on-chip internally matched power amplifier as claimed in claim 1, wherein the isolation resistor, the impedance matching circuit and the gate bias circuit are all fabricated on a ceramic substrate, and the ceramic substrate is 99.6% alumina ceramic.
10. The novel chip-loaded internal matching power amplifier as claimed in claim 1, wherein the GaN power transistors are GaN HEMT die, two GaN power transistor input terminals are connected with a C6a multi-electrode type single-layer grounding capacitor and a C6b multi-electrode type single-layer grounding capacitor through gold wires, then gold wires are led out from the C6a multi-electrode type single-layer capacitor to be connected with an internal matching passive input circuit (101), the internal matching passive input circuit (101) is manufactured on a ceramic substrate and comprises a C2 capacitor, a synthesis network with an impedance transformation function and an R2 isolation resistor, and the R2 isolation resistor is based on a thin film resistor on a ceramic plate; the internal matching passive input circuit is connected with the input port through a gold wire led out from a C2 capacitor; similarly, the output end of the GaN HEMT tube core is connected with a C7a multi-electrode type single-layer grounding capacitor and a C7b multi-electrode type single-layer grounding capacitor through gold wires, then gold wires are led out to be connected with an internal matching passive output circuit (102), the internal matching passive output circuit (102) is manufactured on a ceramic substrate and comprises a C5 capacitor, a synthetic network with an impedance transformation function and an R3 isolation resistor, and the R3 isolation resistor is based on a thin film resistor on a ceramic plate; the low-frequency stability of the peripheral grid bias circuit is improved by serially connecting R1 resistors, one end of the grid bias circuit is connected with a grid power supply after being connected with a C1 grounded capacitor in parallel through a gold wire, and the other end of the grid bias circuit is connected to an inner matching passive input circuit (101) through the gold wire; after one end of the drain electrode bias circuit is connected with a C3 grounding capacitor and a C4 grounding capacitor in parallel, the drain electrode power supply is connected, and the other end of the drain electrode bias circuit is connected to the inner matching passive output circuit (102).
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110451389.1A CN113114129A (en) | 2021-04-26 | 2021-04-26 | Novel chip-loading type internal matching power amplifier |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110451389.1A CN113114129A (en) | 2021-04-26 | 2021-04-26 | Novel chip-loading type internal matching power amplifier |
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| CN113114129A true CN113114129A (en) | 2021-07-13 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113645814A (en) * | 2021-08-24 | 2021-11-12 | 中国电子科技集团公司第三十八研究所 | Heat dissipation structure, power amplification module and method of small-sized transmitting system |
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2021
- 2021-04-26 CN CN202110451389.1A patent/CN113114129A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113645814A (en) * | 2021-08-24 | 2021-11-12 | 中国电子科技集团公司第三十八研究所 | Heat dissipation structure, power amplification module and method of small-sized transmitting system |
| CN113645814B (en) * | 2021-08-24 | 2023-05-16 | 中国电子科技集团公司第三十八研究所 | Heat radiation structure, power amplifier module and method of small-sized transmitting system |
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