CN109860166A - Interior matching gallium nitride multi-chip integrated power amplification module - Google Patents
Interior matching gallium nitride multi-chip integrated power amplification module Download PDFInfo
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- CN109860166A CN109860166A CN201910174926.5A CN201910174926A CN109860166A CN 109860166 A CN109860166 A CN 109860166A CN 201910174926 A CN201910174926 A CN 201910174926A CN 109860166 A CN109860166 A CN 109860166A
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- gallium nitride
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- microstrip line
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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Abstract
The present invention relates to microwave power device fields, aiming at the problem that matching process outside shell is unable to get high-power output, it is proposed that multi-chip integrated power amplification module, including input microstrip line, gallium nitride die chip one, power distribution microstrip line, gallium nitride die chip two, gallium nitride die chip three, output microstrip line, DC bias circuit, impedance compensation circuit and bottom plate are transferred in matching nitridation in one kind；Input signal successively reaches gallium nitride die chip two and gallium nitride die chip three through input microstrip line, gallium nitride die chip one and power distribution microstrip line, most afterwards through output microstrip line output, the power pin of three chips connects external power supply by DC bias circuit, is input on the route of output and is provided with impedance compensation circuit；Gallium nitride die chip one, gallium nitride die chip two, gallium nitride die chip three, input microstrip line, power distribution microstrip line and output microstrip line are arranged on bottom plate.The present invention amplifies suitable for powerful integrated power.
Description
Technical field
The present invention relates to microwave power device field, in particular to a kind of power amplifier module.
Background technique
Microwave power device is wide from silicon bipolar junction transistor, field-effect tube and in mobile communication field in recent years
The LDMOS pipe of general application is to silicon carbide (SiC), the broad stopband power tube transitions that gallium nitride (GaN) is representative.GaN power tube
Because of advantages such as its high-breakdown-voltage, High Linear performance, high efficiency, in radio communication base station, radio and television, radio station, interference
The fields such as machine, high powered radar, electronic countermeasure, satellite communication have a wide range of applications and good prospect of the application.It is answered in system
Many application demands such as broadband, miniaturization, low cost, general-purpose device, modularized design are proposed to power tube in.In order to mention
The workability of high device, what microwave current power device producer generally provided is the power transistor matched, this power
Pipe uses under specific frequency mostly, and versatility is poor.And not matched broadband power chip has low price, bandwidth, fits
The advantages that wide with property, can satisfy core devices generalization instantly, seriation and development cycle short, adaptable and fast application requirement, have
Biggish development space.As the promotion to power tube power causes total grid width to increase, tube core impedance real part is caused to become smaller, Q value
Increase, the amplitude and phase imbalance problem of electric feed signal is more serious, and the S parameter of packaging turns ground on Smith circle diagram
It is too fast, cause the matching for directly carrying out certain bandwidth using external circuit extremely difficult, existing GaN monolithic integrated microwave circuit
(MMIC) in spite of it is small in size, with the advantages such as wide, consistency is high, but its development cost is relatively high, and the production cycle is longer.
In conclusion the shortcomings that prior art is as follows, development cost is high, and the production cycle is long, the matching process outside shell without
Method obtains big power output.
Summary of the invention
The technical problems to be solved by the present invention are: the matching process outside existing shell is overcome to be unable to get high-power output
The problem of, propose that multi-chip integrated power amplification module is transferred in matching nitridation in one kind.
The present invention solves above-mentioned technical problem, the technical solution adopted is that:
Interior matching gallium nitride multi-chip integrated power amplification module, including input microstrip line, gallium nitride die chip one, function
Rate distributes microstrip line, gallium nitride die chip two, gallium nitride die chip three, output microstrip line, DC bias circuit, impedance benefit
Repay circuit and bottom plate；The one end for inputting microstrip line is connected to input signal, and the other end for inputting microstrip line is connected by gold wire bonding
The output pin of the input pin of gallium nitride die chip one, gallium nitride die chip one is micro- through power distribution by gold wire bonding
The input pin of gallium nitride die chip two and the input pin of gallium nitride die chip three, gallium nitride tube core are respectively communicated with line
The output pin of chip two and the output pin of gallium nitride die chip three pass through one that gold wire bonding connects output microstrip line
End exports the other end of microstrip line as output；The gallium nitride die chip one, gallium nitride die chip two and gallium nitride pipe
The power pin of die chip three connects external power supply, the input microstrip line and output microstrip line phase by DC bias circuit
Impedance compensation circuit is provided on the route of connection；The gallium nitride die chip one, gallium nitride die chip two, gallium nitride pipe
Die chip three, input microstrip line, power distribution microstrip line and output microstrip line are arranged on bottom plate.
Preferably, through gold wire bonding on flange one, the flange one is arranged in copper the gallium nitride die chip one
On support plate one, the copper support plate one is arranged on bottom plate.
Preferably, the gallium nitride die chip two and gallium nitride die chip three pass through gold wire bonding on flange two,
The flange two is arranged on copper support plate two, and the copper support plate two is arranged on bottom plate.
Preferably, the bottom plate is the Al that dielectric constant is 9.92O3Ceramic wafer.
Preferably, the impedance compensation circuit includes capacitor one, capacitor two and capacitor three, and one end of capacitor one is for being connected to
Input signal, the other end connection input microstrip line of capacitor one, the output of one end connection gallium nitride die chip one of capacitor two
Pin, the input pin of the other end connection gallium nitride die chip two of capacitor two and the input pipe of gallium nitride die chip three
Foot, one end of capacitor three are used for output signal, the other end connection output microstrip line of capacitor three.
Preferably, the DC bias circuit includes resistance one and resistance two, and one end of resistance one is connected to gallium nitride tube core
The power pin of chip one, the other end of resistance one connect external power supply, and one end of the resistance two is connected to gallium nitride tube core core
The other end of the power pin of piece two and the power pin of gallium nitride die chip three, resistance two connects external power supply.
Preferably, the gallium nitride die chip one is used as driving stage, uses the die chip of model GDAH2P4A；
And/or the gallium nitride die chip two and gallium nitride die chip three are as amplifying stage and all using model
For the die chip of GDAH004A.
The beneficial effects of the present invention are:
1) gallium nitride die chip one is regard as driving stage tube core, by gallium nitride die chip two and gallium nitride die chip
Three are used as amplifying stage tube core, can be by reasonably selecting gallium nitride die chip one, gallium nitride die chip two and gallium nitride tube core
Chip three realizes bandwidth and power requirement.
2) pass through and rationally design DC bias circuit, impedance compensation circuit, each microstrip line and pedestal, realization impedance transformation,
Power distribution and electrical isolation.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the embodiment of the present invention；
Fig. 2 is the schematic equivalent circuit of the embodiment of the present invention；
Wherein, 1 is input microstrip line, and 2 be gallium nitride die chip one, and 3 be power distribution microstrip line, and 4 be gallium nitride pipe
Die chip two, 5 be gallium nitride die chip three, and 6 be output microstrip line, and 7 be pedestal, and 8 be flange one, and 9 be copper support plate one, and 10 are
Flange two, 11 be copper support plate two, and 12 be capacitor one, and 13 be capacitor two, and 14 be capacitor three, and 15 be resistance one, and 16 be resistance two.
Specific embodiment
In order to make the objectives, technical solutions, and advantages of the present invention clearer, it below in conjunction with attached drawing and is implemented as follows
The present invention will be described in further detail for example.
Interior matching gallium nitride multi-chip integrated power amplification module, including input microstrip line, gallium nitride die chip one, function
Rate distributes microstrip line, gallium nitride die chip two, gallium nitride die chip three, output microstrip line, DC bias circuit, impedance benefit
Repay circuit and bottom plate；The one end for inputting microstrip line is connected to input signal, and the other end for inputting microstrip line is connected by gold wire bonding
The output pin of the input pin of gallium nitride die chip one, gallium nitride die chip one is micro- through power distribution by gold wire bonding
The input pin of gallium nitride die chip two and the input pin of gallium nitride die chip three, gallium nitride tube core are respectively communicated with line
The output pin of chip two and the output pin of gallium nitride die chip three pass through one that gold wire bonding connects output microstrip line
End exports the other end of microstrip line as output；Gallium nitride die chip one, gallium nitride die chip two and gallium nitride tube core core
The power pin of piece three connects external power supply, the line that input microstrip line is connected with output microstrip line by DC bias circuit
Road is provided with impedance compensation circuit；It is gallium nitride die chip one, gallium nitride die chip two, gallium nitride die chip three, defeated
Enter microstrip line, power distribution microstrip line and output microstrip line to be arranged on bottom plate.
Wherein, gallium nitride die chip one is used as driving stage tube core, by gallium nitride die chip two and gallium nitride tube core core
Piece three is used as amplifying stage tube core；DC bias circuit plays metering function, and impedance compensation circuit is used to adjust the impedance of circuit；Input
Microstrip line is used to be connected to the input signal and input power of driving stage tube core, and power distribution microstrip line is mainly used for driving stage pipe
Two amplifying stage tube cores are distributed in the output of core, and output microstrip line is for being connected to output signal；It can be by reasonably selecting gallium nitride
Die chip one, gallium nitride die chip two and gallium nitride die chip three realize bandwidth and power requirement；Using big signal
Nonlinear model is placed in conjunction with the traction of the debt of fundamental wave and second harmonic and source traction, rationally designs and optimize each microstrip line
Shape, design impedance compensation circuit, DC bias circuit and pedestal, realize impedance transformation, power distribution and electrical isolation, make
It obtains this multi-chip integrated power amplification module to be balanced in signal amplitude and phase, promotes the impedance that tube core is output and input
Real part to 50 ohm.This multi-chip integrated power amplification module structure is simple, is easy to product engineering.
In order to enable the installation of gallium nitride die chip one is more reliable and more stable, gallium nitride die chip one can pass through spun gold
It is bonded on flange one, flange one may be provided on copper support plate one, and copper support plate one is arranged on bottom plate.
In order to enable the installation of gallium nitride die chip two and gallium nitride die chip three is more reliable and more stable, above-mentioned nitridation
Gallium die chip two and gallium nitride die chip three can be by gold wire bondings on flange two, and flange two may be provided at copper support plate two
On, copper support plate two is arranged on bottom plate.
As the preferred of above-mentioned bottom plate, bottom plate is the Al that dielectric constant is 9.92O3Ceramic wafer.
As the preferred of above-mentioned impedance compensation circuit, impedance compensation circuit includes capacitor one, capacitor two and capacitor three, capacitor
One one end is for being connected to input signal, and the other end connection input microstrip line of capacitor one, one end of capacitor two is connected to gallium nitride
The output pin of die chip one, the input pin and gallium nitride tube core of the other end connection gallium nitride die chip two of capacitor two
The input pin of chip three, one end of capacitor three are used for output signal, the other end connection output microstrip line of capacitor three.
As the preferred of above-mentioned DC bias circuit, DC bias circuit includes resistance one and resistance two, and the one of resistance one
The power pin of end connection gallium nitride die chip one, the other end of resistance one connect external power supply, one end connection of resistance two
The power pin of gallium nitride die chip two and the power pin of gallium nitride die chip three, the other end of resistance two connect external
Power supply.
To guarantee that the bandwidth of matching gallium nitride multi-chip integrated power amplification module in this reaches 2700-6500Mhz, export
Power reaches 20W, and gallium nitride die chip one is used as driving stage, uses the die chip of model GDAH2P4A；Gallium nitride
Die chip two and gallium nitride die chip three are as amplifying stage and all using the die chip of model GDAH004A.
Embodiment
As shown in Figure 1, interior matching gallium nitride multi-chip integrated power amplification module, including input microstrip line 1, model
The gallium nitride die chip 1 of GDAH2P4A, power distribution microstrip line 3, model GDAH004A gallium nitride die chip two
4, the gallium nitride die chip 35 of model GDAH004A, output microstrip line 6, DC bias circuit, impedance compensation circuit and bottom
Plate 7；The one end for inputting microstrip line 1 is connected to input signal, and the other end for inputting microstrip line 1 connects gallium nitride pipe by gold wire bonding
The input pin of die chip 1, the output pin of gallium nitride die chip 1 pass through gold wire bonding through power distribution microstrip line 3
It is respectively communicated with the input pin of gallium nitride die chip 24 and the input pin of gallium nitride die chip 35, gallium nitride tube core core
The output pin of piece 24 and the output pin of gallium nitride die chip 35 pass through one that gold wire bonding connects output microstrip line 6
End, the other end of output microstrip line 6 is as output；Gallium nitride die chip 1, gallium nitride die chip 24 and gallium nitride pipe
The power pin of die chip 35 connects external power supply, input microstrip line 1 and output 14 phase of microstrip line by DC bias circuit
Impedance compensation circuit is provided on the route of connection；Gallium nitride die chip 1, gallium nitride die chip 24, gallium nitride tube core
Chip 35, input microstrip line 1, power distribution microstrip line 3 and output microstrip line 6 are arranged on bottom plate 7.Wherein, bottom plate 7 is
Dielectric constant be 9.9 with a thickness of 20mil ceramic wafer, gallium nitride die chip 1 by gold wire bonding on flange 1, method
Orchid 1 may be provided on copper support plate 1, and copper support plate 1 is arranged on bottom plate 7, gallium nitride die chip 24 and gallium nitride tube core
Respectively by gold wire bonding on flange 2 10, flange 2 10 is arranged on copper support plate 2 11 chip 35, and copper support plate 2 11 is arranged
On bottom plate 7.
It is illustrated in figure 2 the schematic equivalent circuit of the embodiment of the present invention, impedance compensation circuit includes combined with Figure 1 and Figure 2,
Capacitor 1, capacitor 2 13 and capacitor 3 14, one end of capacitor 1 connect for being connected to input signal, the other end of capacitor 1
Connect input microstrip line 1, the output pin of one end connection gallium nitride die chip 1 of capacitor 2 13, the other end of capacitor 2 13
It is connected to the input pin of gallium nitride die chip 24 and the input pin of gallium nitride die chip 35, one end of capacitor 3 14 is used
In output signal, the other end connection output microstrip line 6 of capacitor three.DC bias circuit includes resistance 1 and resistance 2 16,
The power pin of one end connection gallium nitride die chip 1 of resistance 1, the other end of resistance 1 connect external power supply, electricity
Hinder the power pin of 2 16 one end connection gallium nitride die chip 24 and the power pin of gallium nitride die chip 35, resistance
2 16 other end connects external power supply.
It is drawn using big signal nonlinear model, in conjunction with the debt of fundamental wave and second harmonic and source traction simulation, design is defeated
Enter microstrip line, power amplification microstrip line and the shape for exporting microstrip line and layout as shown in Figure 1, design flange one and flange two
Having a size of 5.5mm × 1.5mm × 0.5mm module size, the ruler of entire interior matching gallium nitride multi-chip integrated power amplification module
Very little only to need 20mm × 17mm × 2mm, the capacitance of design capacitance one, capacitor two and capacitor is 5.6pF, designs resistance one and resistance
Two resistance value is 20 ohm, by test can get Ben Nei match gallium nitride multi-chip integrated power amplification module bandwidth be
2700-6500Mhz, drain-source saturation current are less than or equal to 4A, and output power is not less than 20W, and detailed test is as follows.
Setting external power supply is -5V, and input pulse duty ratio is that 80% pulsewidth is the pulsed continuous wave that 80us voltage is 30V
Signal is tested, and the electric current tested out is 150mA, and the output power tested out is as shown in table 1 below.
Output power under the conditions of 1 pulsed continuous wave of table
Under above-mentioned input condition, gain data when middle section frequency point output power is 20W is as shown in table 2 below.
Gain data when 2 output power of table is 20W
External power supply is -5V, and input pulse duty ratio is that 80% pulsewidth is the pulsed continuous wave signal that 80us voltage is 30V
It is tested, the electric current tested out is 150mA, and the second harmonic tested out when output power is 20W is as shown in table 3 below.
Table 3 inputs second harmonic when continuous wave signal output power is 20W
Claims (7)
1. gallium nitride multi-chip integrated power amplification module is matched in, which is characterized in that including inputting microstrip line, gallium nitride tube core
Chip one, power distribution microstrip line, gallium nitride die chip two, gallium nitride die chip three, output microstrip line, direct current biasing electricity
Road, impedance compensation circuit and bottom plate；The one end for inputting microstrip line is connected to input signal, and the other end for inputting microstrip line passes through spun gold
The input pin of bonding connection gallium nitride die chip one, the output pin of gallium nitride die chip one is by gold wire bonding through function
Rate distribution microstrip line is respectively communicated with the input pin of gallium nitride die chip two and the input pin of gallium nitride die chip three, nitrogen
Change gallium die chip two output pin and the output pin of gallium nitride die chip three pass through gold wire bonding connect export it is micro-
One end with line exports the other end of microstrip line as output；The gallium nitride die chip one, two and of gallium nitride die chip
The power pin of gallium nitride die chip three connects external power supply, the input microstrip line and output by DC bias circuit
Impedance compensation circuit is provided on the route that microstrip line is connected；The gallium nitride die chip one, gallium nitride die chip two,
Gallium nitride die chip three, input microstrip line, power distribution microstrip line and output microstrip line are arranged on bottom plate.
2. matching gallium nitride multi-chip integrated power amplification module in as described in claim 1, which is characterized in that the nitridation
Gallium die chip one is through gold wire bonding on flange one, and the flange one is arranged on copper support plate one, and the copper support plate one is set
It sets on bottom plate.
3. matching gallium nitride multi-chip integrated power amplification module in as described in claim 1, which is characterized in that the nitridation
Gallium die chip two and gallium nitride die chip three pass through gold wire bonding on flange two, and the flange two is arranged in copper support plate two
On, the copper support plate two is arranged on bottom plate.
4. the interior matching gallium nitride multi-chip integrated power amplification module as described in claims 1 or 2 or 3, which is characterized in that institute
Stating bottom plate is the Al that dielectric constant is 9.92O3Ceramic wafer.
5. matching gallium nitride multi-chip integrated power amplification module in as described in claim 1, which is characterized in that the impedance
Compensation circuit includes capacitor one, capacitor two and capacitor three, and one end of capacitor one is for being connected to input signal, the other end of capacitor one
Connection input microstrip line, the output pin of one end connection gallium nitride die chip one of capacitor two, the other end connection of capacitor two
The input pin of gallium nitride die chip two and the input pin of gallium nitride die chip three, one end of capacitor three is for exporting letter
Number, the other end connection output microstrip line of capacitor three.
6. matching gallium nitride multi-chip integrated power amplification module in as described in claim 1, which is characterized in that the direct current
Biasing circuit includes resistance one and resistance two, the power pin of one end connection gallium nitride die chip one of resistance one, resistance one
The other end connect external power supply, the resistance two one end connection gallium nitride die chip two power pin and gallium nitride pipe
The other end of the power pin of die chip three, resistance two connects external power supply.
7. the interior matching gallium nitride multi-chip integrated power amplification module as described in claims 1 or 2 or 3 or 5 or 6, feature
It is, the gallium nitride die chip one is used as driving stage, uses the die chip of model GDAH2P4A；
And/or the gallium nitride die chip two and gallium nitride die chip three are as amplifying stage and all using model
The die chip of GDAH004A.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910174926.5A CN109860166A (en) | 2019-03-08 | 2019-03-08 | Interior matching gallium nitride multi-chip integrated power amplification module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910174926.5A CN109860166A (en) | 2019-03-08 | 2019-03-08 | Interior matching gallium nitride multi-chip integrated power amplification module |
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| CN109860166A true CN109860166A (en) | 2019-06-07 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910174926.5A Pending CN109860166A (en) | 2019-03-08 | 2019-03-08 | Interior matching gallium nitride multi-chip integrated power amplification module |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801392A (en) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | Radio frequency power amplification device |
| CN107017172A (en) * | 2015-10-30 | 2017-08-04 | 英飞凌科技股份有限公司 | Different types of semiconductor element is set to be attached to the multi-die packages of same conductive flange |
| CN107124145A (en) * | 2017-03-29 | 2017-09-01 | 中国电子科技集团公司第五十五研究所 | Mesh power pipe in a kind of automatic biasing |
| CN207869072U (en) * | 2017-12-29 | 2018-09-14 | 成都华光瑞芯微电子股份有限公司 | A kind of quasi- multi-chip power amplifier |
-
2019
- 2019-03-08 CN CN201910174926.5A patent/CN109860166A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102801392A (en) * | 2012-09-13 | 2012-11-28 | 电子科技大学 | Radio frequency power amplification device |
| CN107017172A (en) * | 2015-10-30 | 2017-08-04 | 英飞凌科技股份有限公司 | Different types of semiconductor element is set to be attached to the multi-die packages of same conductive flange |
| CN107124145A (en) * | 2017-03-29 | 2017-09-01 | 中国电子科技集团公司第五十五研究所 | Mesh power pipe in a kind of automatic biasing |
| CN207869072U (en) * | 2017-12-29 | 2018-09-14 | 成都华光瑞芯微电子股份有限公司 | A kind of quasi- multi-chip power amplifier |
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Application publication date: 20190607 |