CN106877640A - A kind of high-voltage starting circuit - Google Patents
A kind of high-voltage starting circuit Download PDFInfo
- Publication number
- CN106877640A CN106877640A CN201710192064.XA CN201710192064A CN106877640A CN 106877640 A CN106877640 A CN 106877640A CN 201710192064 A CN201710192064 A CN 201710192064A CN 106877640 A CN106877640 A CN 106877640A
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- voltage
- electric capacity
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- starting circuit
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- 230000005669 field effect Effects 0.000 claims abstract description 33
- 239000003990 capacitor Substances 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims description 12
- 239000000919 ceramic Substances 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052802 copper Inorganic materials 0.000 claims description 5
- 239000010949 copper Substances 0.000 claims description 5
- 230000008569 process Effects 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 239000010408 film Substances 0.000 claims description 4
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000694 effects Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 239000010703 silicon Substances 0.000 claims description 3
- 230000000087 stabilizing effect Effects 0.000 claims description 3
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 239000010409 thin film Substances 0.000 claims description 2
- 229910052573 porcelain Inorganic materials 0.000 claims 2
- 239000004065 semiconductor Substances 0.000 claims 2
- 238000004804 winding Methods 0.000 description 15
- 230000005611 electricity Effects 0.000 description 9
- 230000006641 stabilisation Effects 0.000 description 5
- 238000011105 stabilization Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000012212 insulator Substances 0.000 description 3
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 239000003985 ceramic capacitor Substances 0.000 description 2
- 239000004952 Polyamide Substances 0.000 description 1
- 238000005269 aluminizing Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000005553 drilling Methods 0.000 description 1
- 150000002466 imines Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000009897 systematic effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/36—Means for starting or stopping converters
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention discloses a kind of high-voltage starting circuit, it is used to solve the problems, such as to be difficult to there is power consumption with timely start-up circuit in the too high circuit of DC bus-bar voltage.The high-voltage starting circuit realizes the step-down of high voltage dc bus in start-up course by the capacitance partial pressure of two different capacitances and pressure voltage, simultaneously by capacitor charge and discharge for linear voltage regulator is powered, in the buffer circuit being made up of with resistance field-effect transistor after linear voltage regulator provides reference voltage to be activated electric current needed for circuit is provided.Start-up circuit is thoroughly turned off after system enters stable state, and quiescent dissipation is zero.The high-voltage starting circuit simple structure of this invention, can according to demand be adjusted flexibly input and output voltage, low to circuit element requirement in high temperature environments, it is easy to accomplish.
Description
Technical field
The invention belongs to electric and electronic technical field, a kind of high voltage startup electricity for working in high temperature environments is specifically related to
Road.
Background technology
In DC-DC Switching Power Supplies, the startup of Switching Power Supply is a very important link, is that can Switching Power Supply just
The often guarantee of work.The supplier of electricity that the chip of the control system of Switching Power Supply is generally engaged using start-up circuit with assists winding
Formula, i.e., provided the operating voltage of chip, by the defeated of transformer assists winding after circuit work when system starts by start-up circuit
Go out voltage for power control system is powered.For the demand of high voltage startup, current some Switching Power Supply control chips are such as
NCP1207A inside has integrated high voltage starting module, and its input voltage range is generally in 50VDC to 500VDC.But by material
With technique limitation, the operating temperature of this chip is no more than 125 degrees Celsius, it is difficult to meet the special types such as oil drilling, Aero-Space
Requirement of the industry to temperature；At the same time based on silicon on high temperature insulator（HTSOI）The high-temperature control chip of technique, such as
Although XTR20810 etc. can work under up to 225 degrees Celsius, its maximum input voltage is only 100VDC, it is difficult in high pressure
Directly used under bus input.
At the same time, in order to improve system whole efficiency, it is necessary to start-up circuit can be certainly under system steady-working state
It is dynamic to close.Existing some start-up circuits still suffer from quiescent dissipation at steady state, cause power attenuation.
The content of the invention
It is an object of the invention to provide a kind of high-voltage starting circuit, it is intended to solve high-voltage starting circuit in high temperature environments
It is difficult to, start-up circuit has quiescent dissipation.
What the present invention was realized in：A kind of high-voltage starting circuit, is connected with the circuit being activated；High-voltage starting circuit bag
Include the first electric capacity, the second electric capacity, linear voltage regulator, the first silicon carbide N type field-effect transistor, first resistor.
One end connection high voltage dc bus of the first electric capacity, the other end of the first electric capacity connects one end of the second capacitor,
The other end ground connection of the second electric capacity, the input of linear voltage regulator is connected between the first electric capacity and the second electric capacity, linear voltage stabilization
The output end of device connects the grid of the first n type field effect transistor, and the drain electrode connection direct current of a N type field-effect transistors is high
Pressure bus, the source electrode of a N type field-effect transistors connects one end of first resistor, and the other end ground connection of first resistor starts
The output end of circuit is connected between the source electrode of a N type field-effect transistors and first resistor.
Preferably, first electric capacity and the second electric capacity are the High-temperature-rescapacitor capacitors such as ceramic capacitor.
Preferably, the first N-type FET is based on carborundum, the FET of gallium nitride wide-band gap material or class
Like high temperature resistant FET.
Preferably, the linear voltage regulator can be the resistant to elevated temperatures voltage stabilizing chip for being based on silicon-on-insulator process,
Or the mu balanced circuit constituted based on resistant to elevated temperatures Zener diode, transistor and other high temperature resistant passive devices.
Preferably, the circuit board of described high-voltage starting circuit passes through normal using resistant to elevated temperatures polyimide circuit board material
Rule printed circuit technology is realized, or uses direct copper ceramic circuit board（Direct Bonded Copper）Or directly aluminizing
Ceramic circuit board (Direct Bonded Aluminum) realized by etch process, or using ceramic substrate by thick film or
Thick-film printed circuit technique is realized.
Further, the transistor generation that the first N-type FET can also can in high temperature environments be worked by other
Replace.
Beneficial effect：1. the present invention solves the Switching Power Supply start-up circuit in the case of HTHP and is difficult to well
Problem of implementation.
2. present invention power consumption in systematic steady state running is zero.
3. simple structure of the present invention, the requirement to circuit element is low.
4. the present invention can be adjusted flexibly input and output voltage, and practicality is high.
Brief description of the drawings
Fig. 1 is the high-voltage starting circuit schematic diagram that one embodiment of the invention is provided.
Fig. 2 is the high-voltage starting circuit and transformer assists winding cooperated power supply schematic diagram that one embodiment of the invention is provided.
Specific embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
Fig. 1 is the circuit structure diagram of start-up circuit provided in an embodiment of the present invention, for convenience of description, be illustrate only and this
The related part of inventive embodiments.As shown in the figure：A kind of high-voltage starting circuit, including it is the first electric capacity C1, the second electric capacity C2, linear
Voltage-stablizer, the first n type field effect transistor M1, first resistor R1.
One end connection high voltage dc bus of the first electric capacity C1, the other end of the first electric capacity C1 connects the second capacitor C2's
One end, the other end ground connection of the second electric capacity C2, the input of linear voltage regulator be connected to the first electric capacity C1 and the second electric capacity C2 it
Between, the output end of linear voltage regulator connects the grid of the first n type field effect transistor M1, the drain electrode of the first field effect transistor M 1
Connection high direct voltage bus, one end of the source electrode connection first resistor R1 of the first field effect transistor M 1, first resistor R1's is another
One end is grounded, and start-up circuit output VCC is connected between the source electrode of a N types field effect transistor M 1 and first resistor R1.
To ensure to work in high temperature environments, the first described electric capacity and the second electric capacity are ceramic capacitor or are similar to resistance to height
Warm capacitor.
To ensure to work in high temperature environments, the first described N-type FET is based on carborundum, gallium nitride broad stopband
The FET of material or similar high temperature resistant FET.
To ensure to work in high temperature environments, described linear voltage regulator can be based on silicon technology on high temperature insulator
Resistant to elevated temperatures voltage stabilizing chip, or constituted based on resistant to elevated temperatures Zener diode, transistor and other high temperature resistant passive devices
Mu balanced circuit.
To ensure to work in high temperature environments, the circuit board processing of described high-voltage starting circuit uses resistant to elevated temperatures polyamides
Imines circuit board material is realized by Conventional printed circuit technique, or uses ceramic copper clad plate（DBC）Or ceramic Aluminium coated plate
(DBA) realized by etch process, or realized by thick film or thin film circuit technique using ceramic substrate.
It is provided in an embodiment of the present invention with high-voltage starting circuit and transformer assists winding cooperated power supply that Fig. 2 show
Schematic diagram.For convenience of description, illustrate only the part related to the embodiment of the present invention.As shown in the figure：A kind of high voltage startup electricity
Road 100, is connected with the circuit 200 being activated including assists winding power supply module and DC power control/drive module, starts
Circuit 100 includes the first electric capacity C1, the second electric capacity C2, linear voltage regulator, the first n type field effect transistor M1, first resistor R1.
One end connection high voltage dc bus of the first electric capacity C1, the other end of the first electric capacity C1 connects the second capacitor C2's
One end, the other end ground connection of the second electric capacity C2, the input of linear voltage regulator be connected to the first electric capacity C1 and the second electric capacity C2 it
Between, the output end of linear voltage regulator connects the grid of the first n type field effect transistor M1, the drain electrode of the first field effect transistor M 1
Connection high direct voltage bus, one end of the source electrode connection first resistor R1 of a N types field effect transistor M 1, first resistor R1
Other end ground connection, the output VCC of start-up circuit 100 is connected to the source electrode and first resistor of a N types field effect transistor M 1
Between R1.
Assists winding power supply module includes transformer assists winding L, commutation diode D, second resistance in being activated circuit
R2 and the 3rd electric capacity C3.Assists winding L is by magnetic core of transformer and primary winding（Do not shown in figure）Coupling, auxiliary around
Group L negative pole ground connection, the positive pole of assists winding L positive poles connection commutation diode D, the negative pole connection second resistance of commutation diode D
One end of R2, one end of the 3rd electric capacity C3 connects the centre of commutation diode D and second resistance R2, the other end of the 3rd electric capacity C3
Ground connection.
Realization principle of the present invention is specifically described below by the embodiment of the circuit shown in Fig. 2：Just start in circuit
When, the also no voltage output of assists winding of transformer is, it is necessary to pass through start-up circuit 100 for whole switching power control system is supplied
Electricity.Core of the invention is the capacitance partial pressure circuit being made up of the first electric capacity C1 and the second electric capacity C2, wherein the first electric capacity C1
The relatively low capacitor of capacitance for pressure voltage is high, its pressure voltage is at least dc bus input voltage；Second electric capacity is pressure voltage
Relatively low and capacitance capacitor higher, its pressure voltage is slightly larger than being activated circuit required input voltage.
In direct current bus bar in a flash, can be filled for the first electric capacity C1 and the second electric capacity C2 under busbar voltage effect
Electricity, positive charge is gathered in the top crown of the first electric capacity C1 and the second electric capacity C2, and negative electrical charge is gathered in the electricity of the first electric capacity C1 and second
Hold C2 bottom crowns.Because the first electric capacity C1 bottom crowns and the second electric capacity C2 top crowns are connected, according to continuous and principle of charge conservation,
In upper electricity, the first electric capacity C1 is equal with the second electric capacity C2 quantities of electric charge in a flash, from capacitor electricity formula Q=CV,
Second electric capacity C2 both end voltages are poor when upper electric, i.e. the input voltage of linear voltage regulator is：V 1 = V in×C 1/（C 1+C 2）, whereinC 1WithC 2The respectively capacitance of the first electric capacity C1 and the second electric capacity C2.IfC 1Far smaller thanC 2, powered on moment linear voltage stabilization
The input voltage of deviceV 1It can be far smaller than bus input voltage.Therefore the capacitance of the first electric capacity C1 and the second electric capacity C2 is suitably selected
Input voltage than can just adjust voltage linear voltage-stablizer is reduced to line from the input voltage of the hundreds of supreme kilovolts of dc bus
Property the proper range that can bear of voltage-stablizer, such as 15 to 30 volts.WhenV 1Positioned at linear voltage regulator nominal input voltage scope, line
Property voltage-stablizer start working, there is provided stabilization VDV 2And the N types field-effect crystalline substance for being closed original
Body pipe M1 is opened.The buffer circuit that first N types field effect transistor M 1 is constituted with first resistor R1, due in start-up course
Less, its output voltage VCC is slightly below drain currentV 2-V th, whereinV thIt is the threshold value of a N types field effect transistor M 1
Voltage.Linear voltage regulator causes the second electric capacity C2 to discharge as the load of the second electric capacity C2 in the process, with entering for electric discharge
The voltage at row the second electric capacity C2 two ends can be gradually reduced, when voltage input voltage minimum less than linear voltage regulator, linear voltage stabilization
Device is stopped, and its output voltage is zero, and a N types field effect transistor M 1 is turned off.The total effectively discharge capacities of second electric capacity C2
It is required that being: △Q 2 = △V×C 2≥, wherein △ V are linear voltage regulator initial input voltage and minimum input electricity
Voltage difference between pressure, i (t) is the discharge current function of time of the second electric capacity C2, and T is to reach the circuit system being entirely activated
The minimum time to needed for the working condition of stabilization.It is to be noted that because the grid of a N types field effect transistor M 1 is defeated
Enter that impedance is very high, the whole supply current for being activated module is by a N types field effect transistor M 1 and the in start-up course
The buffer circuit that one resistance R1 is constituted is provided, and the second electric capacity C2 can be reduced only for linear voltage regulator is powered with high degree
Requirement to the second electric capacity C2 capacity.
When total effective discharge capacity of the second electric capacity meets above-mentioned requirements, whole circuit system can discharge in the second electric capacity C2 and tie
Beam advances into stable state, and now transformer assists winding receives the energy that transformer is transmitted by electromagnetic coupled mode
Amount produces alternating voltage, and by commutation diode D rectifications, the 3rd electric capacity C3 is filtered and second resistance R2, and it is control to be connected to VCC
Module for power supply.Being adjusted by the number of turn to transformer assists winding can be set the output voltage of assists winding power supply circuit
It is set to slightly aboveV 2-V th, so as to ensure that system enters the grid and source class of a N types field effect transistor M 1 after stable state
Voltage difference be less than threshold voltage, to turn off a N types field effect transistor M 1.Now the second electric capacity C2 may proceed to be discharged toV inThe minimum input voltage of linear voltage regulator is reached, then activation system is closed, whole control module is completely by assists winding
Power supply.After system reaches stable state, because electric capacity is not turned under dc bus, linear voltage regulator and a N types field-effect are brilliant
All in closed mode, now power consumption is zero to whole activation system to body pipe M1 in theory.
Although above-described embodiment is with hot environment as application background, range of application of the present invention is not limited to high temperature ring
Border, effect same can be still obtained under normal temperature environment as high-voltage starting circuit solution.
Presently preferred embodiments of the present invention is the foregoing is only, is not intended to limit the invention.Although with reference to foregoing reality
The explanation that example has carried out in greater detail to the present invention is applied, for a person skilled in the art, it still can be to foregoing each reality
The technical scheme described in example is applied to modify or carry out equivalent to which part technical characteristic.It is all of the invention
Any modification, equivalent and improvement made within spirit and principle etc., should be included within the scope of the present invention.
Claims (6)
1. a kind of high-voltage starting circuit, it is characterised in that：The high-voltage starting circuit includes the first electric capacity, the second electric capacity, linear
Voltage-stablizer, the first silicon carbide N type field-effect transistor, first resistor；One end connection high voltage dc bus of the first electric capacity, first
The other end of electric capacity connects one end of the second capacitor, the other end ground connection of the second electric capacity, the input connection of linear voltage regulator
Between the first electric capacity and the second electric capacity, the output end of linear voltage regulator connects the grid of the first n type field effect transistor, first
The drain electrode connection high direct voltage bus of N type field-effect transistors, the source electrode connection first resistor of a N type field-effect transistors
One end, the other end ground connection of first resistor, the output end of start-up circuit is connected to the source electrode of a N type field-effect transistors
And first resistor between.
2. high-voltage starting circuit according to claim 1, it is characterised in that：The first described electric capacity and the second electric capacity are pottery
The capacitor of porcelain or other exotic materials.
3. high-voltage starting circuit according to claim 1, it is characterised in that：The first described n type field effect transistor is
FET based on high temperature resistant semiconductor material with wide forbidden band.
4. high-voltage starting circuit according to claim 1, it is characterised in that：Described linear voltage regulator is exhausted based on high temperature
The resistant to elevated temperatures voltage stabilizing chip of silicon technology on edge body, or based on resistant to elevated temperatures Zener diode, wide bandgap semiconductor transistor,
The mu balanced circuit constituted with other high temperature resistant passive devices.
5. high-voltage starting circuit according to claim 1, it is characterised in that：The circuit board processing of the start-up circuit is used
Resistant to elevated temperatures polyimide circuit board material is realized by Conventional printed circuit technique, or uses ceramic copper clad plate（Direct
Bonded Copper）Or ceramic Aluminium coated plate (Direct Bonded Aluminum) is realized by etch process, or use pottery
Porcelain substrate is realized by thick film or thin film circuit technique.
6. high-voltage starting circuit according to claim 1, it is characterised in that：The first described n type field effect transistor
Can be replaced by p type field effect transistor or triode and obtain same effect.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611204581 | 2016-12-23 | ||
| CN2016112045816 | 2016-12-23 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106877640A true CN106877640A (en) | 2017-06-20 |
| CN106877640B CN106877640B (en) | 2024-02-02 |
Family
ID=59160334
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710192064.XA Active CN106877640B (en) | 2016-12-23 | 2017-03-28 | High-voltage starting circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106877640B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111156669A (en) * | 2020-01-19 | 2020-05-15 | 广东美的制冷设备有限公司 | Control circuit, control method, air conditioner, and computer-readable storage medium |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000175449A (en) * | 1998-12-07 | 2000-06-23 | Nec Eng Ltd | Switching power source circuit |
| JP2000262057A (en) * | 1999-03-10 | 2000-09-22 | Tokimec Inc | Starting circuit for auxiliary power supply for control |
| JP2003224977A (en) * | 2002-01-29 | 2003-08-08 | Sharp Corp | Switching power supply |
| CN103199692A (en) * | 2013-03-14 | 2013-07-10 | 中国科学院微电子研究所 | Monolithic low power consumption starting circuit device arranged inside chip and used in switching power supply |
| CN103647507A (en) * | 2013-12-11 | 2014-03-19 | 东北大学 | High-temperature voltage controlled oscillator |
| WO2015018199A1 (en) * | 2013-08-09 | 2015-02-12 | 华为技术有限公司 | Starting circuit of photovoltaic inverter auxiliary power supply |
-
2017
- 2017-03-28 CN CN201710192064.XA patent/CN106877640B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000175449A (en) * | 1998-12-07 | 2000-06-23 | Nec Eng Ltd | Switching power source circuit |
| JP2000262057A (en) * | 1999-03-10 | 2000-09-22 | Tokimec Inc | Starting circuit for auxiliary power supply for control |
| JP2003224977A (en) * | 2002-01-29 | 2003-08-08 | Sharp Corp | Switching power supply |
| CN103199692A (en) * | 2013-03-14 | 2013-07-10 | 中国科学院微电子研究所 | Monolithic low power consumption starting circuit device arranged inside chip and used in switching power supply |
| WO2015018199A1 (en) * | 2013-08-09 | 2015-02-12 | 华为技术有限公司 | Starting circuit of photovoltaic inverter auxiliary power supply |
| CN103647507A (en) * | 2013-12-11 | 2014-03-19 | 东北大学 | High-temperature voltage controlled oscillator |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111156669A (en) * | 2020-01-19 | 2020-05-15 | 广东美的制冷设备有限公司 | Control circuit, control method, air conditioner, and computer-readable storage medium |
| CN111156669B (en) * | 2020-01-19 | 2021-07-13 | 广东美的制冷设备有限公司 | Control circuit, control method, air conditioner, and computer-readable storage medium |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106877640B (en) | 2024-02-02 |
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