CN104796016A - High-voltage power tube and power source module - Google Patents
High-voltage power tube and power source module Download PDFInfo
- Publication number
- CN104796016A CN104796016A CN201510151018.6A CN201510151018A CN104796016A CN 104796016 A CN104796016 A CN 104796016A CN 201510151018 A CN201510151018 A CN 201510151018A CN 104796016 A CN104796016 A CN 104796016A
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- Prior art keywords
- voltage power
- driving chip
- power pipe
- pin
- connects
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
- H02M1/088—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices
- H02M1/096—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters for the simultaneous control of series or parallel connected semiconductor devices the power supply of the control circuit being connected in parallel to the main switching element
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
- H02M7/02—Conversion of ac power input into dc power output without possibility of reversal
- H02M7/04—Conversion of ac power input into dc power output without possibility of reversal by static converters
- H02M7/12—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M7/21—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M7/217—Conversion of ac power input into dc power output without possibility of reversal by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
Abstract
The invention discloses a high-voltage power tube and a power source module. The high-voltage power tube comprises an enhancement type MOS transistor, a depletion type MOS transistor and a diode, wherein the DRAIN end of the enhancement type MOS transistor is connected with the DRAIN end of the depletion type MOS transistor, and serves as a drain electrode of the high-voltage power tube, the SOURCE end of the enhancement type MOS transistor serves as a source electrode of the high-voltage power tube, and the GATE end of the enhancement type MOS transistor serves as a grid electrode of the high-voltage power tube; the GATE end of the depletion type MOS transistor is connected with the SOURCE end of the depletion type MOS transistor and a positive electrode of the diode, and a negative electrode of the diode serves as a P pin of the high-voltage power tube, and is used for supplying electricity to a driving chip. An existing chip power supply circuit is omitted, the power supply mode of the driving chip is simplified, and therefore the space and the cost of a PCB are saved, and the power consumption caused by a starting resistor in the chip power supply circuit can be reduced.
Description
Technical field
The present invention relates to discrete high-voltage power Manifold technology field, in particular a kind of high-voltage power pipe and power module.
Background technology
When existing AC/DC system carries out Power convert, solution can be roughly divided into isolated form and non-isolation type according to different types of transformer.
The canonical system topological structure of the power module of non-isolation type as shown in Figure 1, comprises rectifier bridge 11, chip power supply circuit 12, load circuit 13, driving chip 14 and high-voltage power pipe 15.The concrete syndeton of each circuit module inside as shown in Figure 1.In described chip power supply circuit 12, the intermediate node that starting resistance Ra1 and electric capacity of voltage regulation Ca1 connect is connected with the energization pins VCC of driving chip 14, and alternating current AC is transferred to driving chip 14 by starting resistance Ra1 and powers after rectifier bridge 11 rectification.Driving chip 14 drives high-voltage power pipe 15, makes load circuit 13 luminous.And starting resistance Ra1 needs extra cost and system space, during power module work, starting resistance Ra1 also can increase power consumption.
The canonical system topological structure of the power module of isolated form as shown in Figure 2, comprises rectifier bridge 21, chip power supply circuit 22, load circuit 23, driving chip 24, photoelectric coupled circuit 25 and high-voltage power pipe 26.The concrete syndeton of each circuit module inside as shown in Figure 2.Described chip power supply circuit 22 is made up of starting resistance Ra2, electric capacity of voltage regulation Ca2, auxiliary power supply electronic circuit 221, and described auxiliary power supply electronic circuit 221 is formed by auxiliary winding A with for the diode D of anti-current flowing backwards.The node that starting resistance Ra2 is connected with the negative pole of electric capacity of voltage regulation Ca2, diode D is connected the energization pins VCC of driving chip 4.In like manner, starting resistance Ra2, diode D, auxiliary winding A need extra cost and system space, and also can produce certain power consumption during the work of this power module.
Visible, existing driving chip power supply technique has yet to be improved and developed.
Summary of the invention
The technical problem to be solved in the present invention is, for the above-mentioned defect of prior art, provides a kind of high-voltage power pipe and power module, is intended to the problem that power supply circuits power consumption is comparatively large, cost is higher solving existing driving chip.
The technical scheme that technical solution problem of the present invention adopts is as follows:
A kind of high-voltage power pipe, be connected with driving chip, it comprises enhancement mode metal-oxide-semiconductor, depletion type MOS tube and diode, the DRAIN end of described enhancement mode metal-oxide-semiconductor to hold with the DRAIN of depletion type MOS tube be connected, be the drain electrode of described high-voltage power pipe, the SOURCE end of enhancement mode metal-oxide-semiconductor is the source electrode of described high-voltage power pipe, and the GATE end of enhancement mode metal-oxide-semiconductor is the grid of described high-voltage power pipe; The GATE end of depletion type MOS tube connects the positive pole of its SOURCE end and diode, and the negative pole of diode is the P pin of described high-voltage power pipe, for powering to driving chip.
In described high-voltage power pipe, described enhancement mode metal-oxide-semiconductor is N channel enhancement metal-oxide-semiconductor, and depletion type MOS tube is N channel depletion type metal-oxide-semiconductor, and diode is POLY type diode.
A kind of power module, comprise sampling resistor, rectification unit, the first load unit and driving chip, it is characterized in that, also comprise described high-voltage power pipe, described rectification unit connects the first load unit, the drain electrode of described high-voltage power pipe connects the first load unit, the P pin of high-voltage power pipe connects the VCC pin of driving chip, the grid of high-voltage power pipe connects the G pin of driving chip, the source electrode of high-voltage power pipe connects the CS pin of driving chip and one end of sampling resistor, the GND pin of described driving chip, the equal ground connection of the other end of sampling resistor.
In described power module, also comprise the first electric capacity, one end of described first electric capacity connects the VCC pin of driving chip and the P pin of high-voltage power pipe, the other end ground connection of the first electric capacity.
A kind of power module, comprise sampling resistor, rectification unit, second load unit, driving chip and optocoupler unit, it also comprises described high-voltage power pipe, described rectification unit connects the second load unit, the drain electrode of described high-voltage power pipe connects the second load unit, the P pin of high-voltage power pipe connects the VCC pin of driving chip, the grid of high-voltage power pipe connects the G pin of driving chip, the source electrode of high-voltage power pipe connects the CS pin of driving chip and one end of sampling resistor, the GND pin of described driving chip, the equal ground connection of the other end of sampling resistor, described optocoupler unit connects the FB pin of the second load unit and driving chip.
In described power module, also comprise the first electric capacity, one end of described first electric capacity connects the VCC pin of driving chip and the P pin of high-voltage power pipe, the other end ground connection of the first electric capacity.
Compared to prior art, high-voltage power pipe provided by the invention and power module, high-voltage power pipe comprises enhancement mode metal-oxide-semiconductor, depletion type MOS tube and diode, the DRAIN end of described enhancement mode metal-oxide-semiconductor to hold with the DRAIN of depletion type MOS tube be connected, be the drain electrode of described high-voltage power pipe, the SOURCE end of enhancement mode metal-oxide-semiconductor is the source electrode of described high-voltage power pipe, and the GATE end of enhancement mode metal-oxide-semiconductor is the grid of described high-voltage power pipe; The GATE end of depletion type MOS tube connects the positive pole of its SOURCE end and diode, and the negative pole of diode is the P pin of described high-voltage power pipe, for powering to driving chip; Eliminate existing chip power supply circuit, simplify the supply power mode of driving chip, thus save space and the cost of pcb board, the power consumption that in chip power supply circuit, starting resistance brings can also be reduced.
Accompanying drawing explanation
Fig. 1 is the circuit diagram of the canonical system topological structure of the power module of prior art non-isolation type.
Fig. 2 is the circuit diagram of the canonical system topological structure of the power module of prior art isolated form.
Fig. 3 is the circuit diagram of high-voltage power pipe provided by the invention.
Fig. 4 is the circuit diagram of the Application Example of the canonical system topological structure of the power module of non-isolation type provided by the invention.
Fig. 5 is the circuit diagram of the Application Example of the canonical system topological structure of the power module of isolated form provided by the invention.
Embodiment
The invention provides a kind of high-voltage power pipe and power module, be applied to the power module of AC/DC system.By improving the structure of existing high-voltage power pipe, by the high-voltage power pipe after improving, driving chip is powered, eliminate existing chip power supply circuit, simplify the supply power mode of driving chip, thus save space and the cost of pcb board, the power consumption that in chip power supply circuit, starting resistance brings can also be reduced.For making object of the present invention, technical scheme and advantage clearly, clearly, developing simultaneously referring to accompanying drawing, the present invention is described in more detail for embodiment.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Refer to Fig. 3, high-voltage power pipe 100 provided by the invention is connected with driving chip, and high-voltage power pipe 100 comprises enhancement mode metal-oxide-semiconductor M1, depletion type MOS tube M2 and diode D1.The DRAIN end of described enhancement mode metal-oxide-semiconductor M1 to hold with the DRAIN of depletion type MOS tube M2 be connected, be the drain D of described high-voltage power pipe 100, the SOURCE end of enhancement mode metal-oxide-semiconductor M1 is the source S of described high-voltage power pipe, and the GATE end of enhancement mode metal-oxide-semiconductor M1 is the grid G of described high-voltage power pipe 100; The GATE end of depletion type MOS tube M2 connects the positive pole of its SOURCE end and diode D1, and the negative pole of diode D1 is the P pin of described high-voltage power pipe 100.
Wherein, described P pin is the power supply pin of high-voltage power pipe 100 pairs of driving chip, for powering to driving chip.The P pin of described high-voltage power pipe 100 is all connected driving chip with grid G.
In this enforcement, described enhancement mode metal-oxide-semiconductor M1 is N channel enhancement metal-oxide-semiconductor, and depletion type MOS tube M2 is N channel depletion type metal-oxide-semiconductor.SOURCE end due to depletion type MOS tube M2 connects its GATE and holds, and UGS=0, now depletion type MOS tube M2 has formed N-type conducting channel.When the drain D of high-voltage power pipe 100 has voltage to input, in depletion type MOS tube M2, there is electric current to flow through, export can power to driving chip from the P pin of high-voltage power pipe 100.After driving chip work, export the grid G of corresponding driving voltage input high-voltage power pipe 100, enhancement mode metal-oxide-semiconductor M1 conducting can be made.Described enhancement mode metal-oxide-semiconductor M1 is as common power pipe switch application.
In the present embodiment, described diode D1 is POLY type diode, and it can prevent driving chip internal current from oppositely flowing out in the conducting phase of enhancement mode metal-oxide-semiconductor M1.
Based on above-mentioned high-voltage power pipe, the embodiment of the present invention also provides a kind of power module, refers to Fig. 4, and it is the circuit diagram of the Application Example of the canonical system topological structure of the power module of non-isolation type.Described power module comprises above-mentioned high-voltage power pipe 100, sampling resistor R1, rectification unit 200, load unit 300 and driving chip 400, described rectification unit 200 connects load unit 300, the drain D of described high-voltage power pipe 100 connects load unit 300, the P pin of high-voltage power pipe 100 connects the VCC pin of driving chip 400, the grid G of high-voltage power pipe 100 connects the G pin of driving chip 400, the source S of high-voltage power pipe 100 connects the CS pin of driving chip 400 and R1 one end of sampling resistor, the GND pin of described driving chip 400, the equal ground connection of the other end of sampling resistor R1.
Alternating current AC is transferred to load unit 300 after the rectifier bridge in rectification unit 200 and capacitance rectifier filtering, the drain D on-load voltage of load unit 300 pairs of high-voltage power pipes 100, electric current is had to flow through in depletion type MOS tube M2, the P pin of high-voltage power pipe 100 exports supply power voltage to the VCC pin of driving chip 400, and driving chip 400 obtains electric work.The G pin of driving chip 400 exports corresponding driving voltage to the grid G of high-voltage power pipe 100, thus drives enhancement mode metal-oxide-semiconductor M1.The internal circuit configuration of high-voltage power pipe 100, rectification unit 200, load unit 300 and annexation specifically as shown in Figure 4, do not repeat herein.
In the specific implementation, described power module also comprises the first electric capacity C1, and one end of described first electric capacity C1 connects the VCC pin of driving chip 400 and the P pin of high-voltage power pipe 100, the other end ground connection of the first electric capacity C1.Described first electric capacity C1 is used for filtering, and the supply power voltage that high-voltage power pipe 100 is exported is more stable.
See also Fig. 5, it is the circuit diagram of the Application Example of the canonical system topological structure of the power module of isolated form.As shown in Figure 5, described power module comprises sampling resistor R1, high-voltage power pipe 100, rectification unit 200, second load unit 300
/, driving chip 400 and optocoupler unit 500, described rectification unit connects the second load unit, and the drain electrode of described high-voltage power pipe connects the second load unit 300
/the P pin of high-voltage power pipe connects the VCC pin of driving chip, the grid of high-voltage power pipe connects the G pin of driving chip, the source electrode of high-voltage power pipe connects the CS pin of driving chip and one end of sampling resistor R1, the GND pin of described driving chip, the equal ground connection of the other end of sampling resistor R1, described optocoupler unit connects the FB pin of the second load unit and driving chip.
Compared with non-isolation type, in the power module of isolated form, add optocoupler unit 500, and the FB pin that optocoupler unit 500 connects driving chip 400 connects.Second load unit 300
/internal circuit configuration different from the first load unit.Also comprise the first electric capacity (annexation is identical with non-isolation type) in this power module, and the operation principle of power module is also similar to non-isolation type, is not described further herein.
It is to be appreciated that above-mentioned rectification unit, the first load unit, the second load unit, driving chip and optocoupler unit are prior art, its internal circuit structure and annexation are not described further herein.
In sum, high-voltage power pipe provided by the invention and power module, by metal-oxide-semiconductor integrated enhanced in high-voltage power pipe, depletion type MOS tube and POLY type diode, exporting P pin for high-voltage power pipe adds one, is that driving chip is powered by this P pin; Save the starting resistance in existing chip power supply circuit, anti-current flowing backwards diode and auxiliary winding, simplify the supply power mode of driving chip; Thus save space and the cost of pcb board, the power consumption that starting resistance brings can also be reduced.Meanwhile, the high-voltage power pipe volume after improvement is less, can be easy to be incorporated in power module and convenient welding, to improve the competitiveness of product.
Should be understood that, application of the present invention is not limited to above-mentioned citing, for those of ordinary skills, can be improved according to the above description or convert, and all these improve and convert the protection range that all should belong to claims of the present invention.
Claims (6)
1. a high-voltage power pipe, be connected with driving chip, it is characterized in that, comprise enhancement mode metal-oxide-semiconductor, depletion type MOS tube and diode, the DRAIN end of described enhancement mode metal-oxide-semiconductor to hold with the DRAIN of depletion type MOS tube be connected, be the drain electrode of described high-voltage power pipe, the SOURCE end of enhancement mode metal-oxide-semiconductor is the source electrode of described high-voltage power pipe, and the GATE end of enhancement mode metal-oxide-semiconductor is the grid of described high-voltage power pipe; The GATE end of depletion type MOS tube connects the positive pole of its SOURCE end and diode, and the negative pole of diode is the P pin of described high-voltage power pipe, for powering to driving chip.
2. high-voltage power pipe according to claim 1, is characterized in that, described enhancement mode metal-oxide-semiconductor is N channel enhancement metal-oxide-semiconductor, and depletion type MOS tube is N channel depletion type metal-oxide-semiconductor, and diode is POLY type diode.
3. a power module, comprise sampling resistor, rectification unit, first load unit and driving chip, it is characterized in that, also comprise as arbitrary in claim 1-2 as described in high-voltage power pipe, described rectification unit connects the first load unit, the drain electrode of described high-voltage power pipe connects the first load unit, the P pin of high-voltage power pipe connects the VCC pin of driving chip, the grid of high-voltage power pipe connects the G pin of driving chip, the source electrode of high-voltage power pipe connects the CS pin of driving chip and one end of sampling resistor, the GND pin of described driving chip, the equal ground connection of the other end of sampling resistor.
4. power module according to claim 3, is characterized in that, also comprises the first electric capacity, and one end of described first electric capacity connects the VCC pin of driving chip and the P pin of high-voltage power pipe, the other end ground connection of the first electric capacity.
5. a power module, comprise sampling resistor, rectification unit, second load unit, driving chip and optocoupler unit, it is characterized in that, also comprise as arbitrary in claim 1-2 as described in high-voltage power pipe, described rectification unit connects the second load unit, the drain electrode of described high-voltage power pipe connects the second load unit, the P pin of high-voltage power pipe connects the VCC pin of driving chip, the grid of high-voltage power pipe connects the G pin of driving chip, the source electrode of high-voltage power pipe connects the CS pin of driving chip and one end of sampling resistor, the GND pin of described driving chip, the equal ground connection of the other end of sampling resistor, described optocoupler unit connects the FB pin of the second load unit and driving chip.
6. power module according to claim 5, is characterized in that, also comprises the first electric capacity, and one end of described first electric capacity connects the VCC pin of driving chip and the P pin of high-voltage power pipe, the other end ground connection of the first electric capacity.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510151018.6A CN104796016A (en) | 2015-04-01 | 2015-04-01 | High-voltage power tube and power source module |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510151018.6A CN104796016A (en) | 2015-04-01 | 2015-04-01 | High-voltage power tube and power source module |
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| Publication Number | Publication Date |
|---|---|
| CN104796016A true CN104796016A (en) | 2015-07-22 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201510151018.6A Pending CN104796016A (en) | 2015-04-01 | 2015-04-01 | High-voltage power tube and power source module |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304627A (en) * | 2015-11-09 | 2016-02-03 | 苏州锴威特半导体有限公司 | Power MOS field effect transistor integrated with depletion startup device |
| CN112994437A (en) * | 2021-02-07 | 2021-06-18 | 成都方舟微电子有限公司 | Starting circuit applied to switching power supply and power integrated device |
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| US20090103338A1 (en) * | 2007-10-18 | 2009-04-23 | Sanken Electric Co., Ltd. | Switching power source apparatus |
| CN101924482A (en) * | 2009-05-28 | 2010-12-22 | 成都芯源系统有限公司 | Voltage converter with integrated low power leaker device and associated methods |
| CN103887961A (en) * | 2014-04-18 | 2014-06-25 | 杭州士兰微电子股份有限公司 | Switching power supply and controller thereof |
| CN204481708U (en) * | 2015-04-01 | 2015-07-15 | 深圳市稳先微电子有限公司 | A kind of high-voltage power pipe and power module |
-
2015
- 2015-04-01 CN CN201510151018.6A patent/CN104796016A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090103338A1 (en) * | 2007-10-18 | 2009-04-23 | Sanken Electric Co., Ltd. | Switching power source apparatus |
| CN101924482A (en) * | 2009-05-28 | 2010-12-22 | 成都芯源系统有限公司 | Voltage converter with integrated low power leaker device and associated methods |
| CN103887961A (en) * | 2014-04-18 | 2014-06-25 | 杭州士兰微电子股份有限公司 | Switching power supply and controller thereof |
| CN204481708U (en) * | 2015-04-01 | 2015-07-15 | 深圳市稳先微电子有限公司 | A kind of high-voltage power pipe and power module |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105304627A (en) * | 2015-11-09 | 2016-02-03 | 苏州锴威特半导体有限公司 | Power MOS field effect transistor integrated with depletion startup device |
| CN105304627B (en) * | 2015-11-09 | 2019-06-04 | 苏州锴威特半导体有限公司 | A kind of MOS field effect tube of integrated depletion type starter |
| CN112994437A (en) * | 2021-02-07 | 2021-06-18 | 成都方舟微电子有限公司 | Starting circuit applied to switching power supply and power integrated device |
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Application publication date: 20150722 |