CN101661938A - 一种新型的抗总剂量辐照的cmos集成电路 - Google Patents
一种新型的抗总剂量辐照的cmos集成电路 Download PDFInfo
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- CN101661938A CN101661938A CN200910092744A CN200910092744A CN101661938A CN 101661938 A CN101661938 A CN 101661938A CN 200910092744 A CN200910092744 A CN 200910092744A CN 200910092744 A CN200910092744 A CN 200910092744A CN 101661938 A CN101661938 A CN 101661938A
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CN200910092744XA CN101661938B (zh) | 2009-09-22 | 2009-09-22 | 一种新型的抗总剂量辐照的cmos集成电路 |
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CN101661938A true CN101661938A (zh) | 2010-03-03 |
CN101661938B CN101661938B (zh) | 2011-01-19 |
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Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102110692A (zh) * | 2011-01-24 | 2011-06-29 | 中国电子科技集团公司第五十八研究所 | 抗辐照eeprom存储阵列隔离结构 |
CN103489477A (zh) * | 2013-09-04 | 2014-01-01 | 华中科技大学 | 抗总剂量效应存储单元电路 |
CN110707043A (zh) * | 2019-10-31 | 2020-01-17 | 西安微电子技术研究所 | 一种带硅化物的场加固抗总剂量辐射cmos器件及工艺 |
CN111812481A (zh) * | 2020-07-22 | 2020-10-23 | 湘潭大学 | 累积电离辐射效应下半导体功率器件的可靠性的评价方法 |
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2009
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102110692A (zh) * | 2011-01-24 | 2011-06-29 | 中国电子科技集团公司第五十八研究所 | 抗辐照eeprom存储阵列隔离结构 |
CN103489477A (zh) * | 2013-09-04 | 2014-01-01 | 华中科技大学 | 抗总剂量效应存储单元电路 |
CN103489477B (zh) * | 2013-09-04 | 2016-01-13 | 华中科技大学 | 抗总剂量效应存储单元电路 |
CN110707043A (zh) * | 2019-10-31 | 2020-01-17 | 西安微电子技术研究所 | 一种带硅化物的场加固抗总剂量辐射cmos器件及工艺 |
CN110707043B (zh) * | 2019-10-31 | 2021-11-09 | 西安微电子技术研究所 | 一种带硅化物的场加固抗总剂量辐射cmos器件及工艺 |
CN111812481A (zh) * | 2020-07-22 | 2020-10-23 | 湘潭大学 | 累积电离辐射效应下半导体功率器件的可靠性的评价方法 |
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CN101661938B (zh) | 2011-01-19 |
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