CN101615586A - The manufacture method of transient voltage suppression diode - Google Patents
The manufacture method of transient voltage suppression diode Download PDFInfo
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- CN101615586A CN101615586A CN200910181725A CN200910181725A CN101615586A CN 101615586 A CN101615586 A CN 101615586A CN 200910181725 A CN200910181725 A CN 200910181725A CN 200910181725 A CN200910181725 A CN 200910181725A CN 101615586 A CN101615586 A CN 101615586A
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- weld tabs
- lead
- welded disc
- loaded
- crystal grain
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Abstract
The invention discloses a kind of manufacture method of transient voltage suppression diode, comprise the steps: the first step, chip cutting, adopt cutting machine to be cut into single chips wafer; Second step, lead filling are loaded into lead in the welded disc; The 3rd step, weld tabs filling down are loaded into weld tabs in the welded disc; The 4th step, crystal grain filling are loaded into crystal grain in the welded disc; The 5th step, upward weld tabs filling are loaded into weld tabs in the welded disc; The 6th step, welded disc combination fill the welded disc of lead with another, with the welded disc combination that fills lead, weld tabs, crystal grain, weld tabs; The 7th goes on foot, advances the stove welding; The 8th goes on foot, wraps up in white glues, adopts the silicon white glues to be wrapped between chip and the lead; The 9th step, high-temperature baking, workpiece is put into the high temperature baking box and is carried out high-temperature baking; The tenth step, the encapsulation of moulding glue use molding for epoxy resin glue with the moulding of finished product plastic packaging; The 11 step, plating with product lead pin, are carried out unleaded plating; The 12 step, test lettering, testing transient voltage suppresses diode electrical property, lettering on the plastic packaging body.Wrap up in the white glues operation because adopt, can improve the product insulation property, leakage current is reduced to below the 1uA, improve product quality.
Description
Technical field
The present invention relates to a kind of manufacture method of transient voltage suppression diode.
Background technology
Transient voltage suppression diode is called for short the TVS device; under the applied in reverse condition of regulation; when bearing a high-octane instantaneous overvoltage pulse; its working impedance can be reduced to very low conduction value immediately; allow big electric current to pass through; and with voltage clamping to predeterminated level, thereby protect the precision components in the electronic circuit to avoid damaging effectively.The transient pulse power that TVS can bear can reach kilowatt, and its clamp response time only is 1ps (10
-12S).The surge forward current that TVS allows under the T=10ms condition, can reach 50～200A at T=25 ℃.Two-way TVS can absorb instantaneous big pulse power at positive and negative both direction, and voltage clamping is arrived predeterminated level, and two-way TVS is applicable to alternating current circuit, and unidirectional TVS generally is used for DC circuit.。
The existing manufacture method of transient voltage suppression diode is as follows usually: chip cutting → lead filling → following weld tabs filling → crystal grain filling → go up weld tabs filling → welded disc to make up → advance stove welding → moulding glue encapsulation → plating → test lettering.The important parameter leakage current of TVS product is generally 5uA-10uA, and along with the raising of client to product quality requirement, the problem that its encapsulating products leakage current is high begins to embody.
Summary of the invention:
The invention provides a kind of transient voltage suppression diode manufacture method that can promote product quality, reduce leakage current.
The present invention adopts following technical scheme:
The first step, chip cutting will have the wafer of transient voltage inhibit feature, adopt cutting machine to be cut into single chips;
Second step, lead filling by the lead loader, are loaded into lead in the welded disc;
The 3rd step, weld tabs filling down by the weld tabs shaking tray, are loaded into the weld tabs that is fit to size in the welded disc;
The 4th step, crystal grain filling by the crystal grain shaking tray, are loaded into the crystal grain that is fit to size in the welded disc;
The 5th step, upward weld tabs filling by the weld tabs shaking tray, are loaded into the weld tabs that is fit to size in the welded disc;
The 6th step, welded disc combination fill the welded disc of lead with another, with the welded disc combination that fills lead, weld tabs, crystal grain, weld tabs, form the function combinations of lead-weld tabs-crystal grain-weld tabs-lead;
The 7th goes on foot, advances the stove welding, and the material after the welded disc combination advances the welding of high-temperature soldering stove, and weld tabs solidifies through the high temperature welding in soldering furnace, and lead, chip, weld tabs solder bond are become an integral body, can make it to have the function of transient voltage suppression diode;
The 8th goes on foot, wraps up in white glues, adopts the silicon white glues, is wrapped between chip and the lead;
The 9th step, high-temperature baking, workpiece is put into the high temperature baking box, carries out high-temperature baking, plays a role after white glues is solidified;
The tenth step, moulding glue encapsulation will be wrapped up in finished product plastic packaging moulding behind the white glues with molding for epoxy resin glue;
The 11 step, plating, the product lead pin with after the plastic packaging moulding carries out unleaded plating, makes things convenient for client to weld use;
The 12 step, test lettering, testing transient voltage suppresses diode electrical property, lettering on the plastic packaging body.
Beneficial effect: wrap up in the white glues operation because adopt, can improve the product insulation property, leakage current is reduced to below the 1uA, prior art is produced the product leakage current and is generally 5uA-10uA, improves product quality.
Embodiment:
Below the invention will be further described.
Its manufacture method is:
The first step, chip cutting will have the wafer of transient voltage inhibit feature, adopt cutting machine to be cut into single chips;
Second step, lead filling by the lead loader, are loaded into lead in the welded disc;
The 3rd step, weld tabs filling down by the weld tabs shaking tray, are loaded into the weld tabs that is fit to size in the welded disc;
The 4th step, crystal grain filling by the crystal grain shaking tray, are loaded into the crystal grain that is fit to size in the welded disc;
The 5th step, upward weld tabs filling by the weld tabs shaking tray, are loaded into the weld tabs that is fit to size in the welded disc;
The 6th step, welded disc combination fill the welded disc of lead with another, with the welded disc combination that fills lead, weld tabs, crystal grain, weld tabs, make it to form the function combinations of lead-weld tabs-crystal grain-weld tabs-lead, conveniently advance the stove welding.
The 7th goes on foot, advances the stove welding, and the material of welded disc combination back advances the welding of high-temperature soldering stove.Weld tabs solidifies through the high temperature welding in soldering furnace, and lead, chip, weld tabs solder bond are become an integral body, can make it to have the function of transient voltage suppression diode;
The 8th goes on foot, wraps up in white glues, adopts the silicon white glues, good because of its insulation property, is wrapped between chip and the lead, blocks leakage current path, reduces its electrical leakage, promotes product quality;
The 9th step, high-temperature baking, uncured after material is wrapped up in white glues because of white glues, need put into the high temperature baking box, carry out high-temperature baking, after being solidified, white glues plays a role;
The tenth step, moulding glue encapsulation will be wrapped up in semi-finished product plastic packaging moulding behind the white glues with molding for epoxy resin glue, make it to have certain mechanical strength;
The 11 step, plating, the product lead pin with after the plastic packaging moulding carries out unleaded plating, makes things convenient for client to weld use;
The 12 step, test lettering, testing transient voltage suppresses diode electrical property, lettering on the plastic packaging body.
Claims (1)
1, a kind of manufacture method of transient voltage suppression diode comprises the steps:
The first step, chip cutting will have the wafer of transient voltage inhibit feature, adopt cutting machine to be cut into single chips;
Second step, lead filling by the lead loader, are loaded into lead in the welded disc;
The 3rd step, weld tabs filling down by the weld tabs shaking tray, are loaded into the weld tabs that is fit to size in the welded disc;
The 4th step, crystal grain filling by the crystal grain shaking tray, are loaded into the crystal grain that is fit to size in the welded disc;
The 5th step, upward weld tabs filling by the weld tabs shaking tray, are loaded into the weld tabs that is fit to size in the welded disc;
The 6th step, welded disc combination fill the welded disc of lead with another, with the welded disc combination that fills lead, weld tabs, crystal grain, weld tabs, form the function combinations of lead-weld tabs-crystal grain-weld tabs-lead;
The 7th goes on foot, advances the stove welding, and the material after the welded disc combination advances the welding of high-temperature soldering stove, and weld tabs solidifies through the high temperature welding in soldering furnace, and lead, chip, weld tabs solder bond are become an integral body, can make it to have the function of transient voltage suppression diode;
The 8th goes on foot, wraps up in white glues, adopts the silicon white glues, is wrapped between chip and the lead;
The 9th step, high-temperature baking, workpiece is put into the high temperature baking box, carries out high-temperature baking, plays a role after white glues is solidified;
The tenth step, moulding glue encapsulation will be wrapped up in finished product plastic packaging moulding behind the white glues with molding for epoxy resin glue;
The 11 step, plating, the product lead pin with after the plastic packaging moulding carries out unleaded plating, makes things convenient for client to weld use;
The 12 step, test lettering, testing transient voltage suppresses diode electrical property, lettering on the plastic packaging body.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910181725A CN101615586A (en) | 2009-07-13 | 2009-07-13 | The manufacture method of transient voltage suppression diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN200910181725A CN101615586A (en) | 2009-07-13 | 2009-07-13 | The manufacture method of transient voltage suppression diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN101615586A true CN101615586A (en) | 2009-12-30 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200910181725A Pending CN101615586A (en) | 2009-07-13 | 2009-07-13 | The manufacture method of transient voltage suppression diode |
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| CN (1) | CN101615586A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315120A (en) * | 2011-09-02 | 2012-01-11 | 上海芯导电子科技有限公司 | Method for reducing leakage current of semiconductor chip |
| CN103441121A (en) * | 2013-08-09 | 2013-12-11 | 如皋市日鑫电子有限公司 | High-voltage TVS composite chip diode |
| CN104319335A (en) * | 2014-10-22 | 2015-01-28 | 苏州大学 | Full automatic diode encapsulation mechanism and use method thereof |
| CN107342222A (en) * | 2017-07-28 | 2017-11-10 | 阳信金鑫电子有限公司 | A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip |
| CN108010841A (en) * | 2017-12-01 | 2018-05-08 | 山东理工大学 | A kind of manufacture method of diode and thus obtained diode |
| CN115295479A (en) * | 2022-10-08 | 2022-11-04 | 淄博美林电子有限公司 | Packaging method of axial single-tube power device |
-
2009
- 2009-07-13 CN CN200910181725A patent/CN101615586A/en active Pending
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102315120A (en) * | 2011-09-02 | 2012-01-11 | 上海芯导电子科技有限公司 | Method for reducing leakage current of semiconductor chip |
| CN102315120B (en) * | 2011-09-02 | 2015-02-04 | 上海芯导电子科技有限公司 | Method for reducing leakage current of semiconductor chip |
| CN103441121A (en) * | 2013-08-09 | 2013-12-11 | 如皋市日鑫电子有限公司 | High-voltage TVS composite chip diode |
| CN104319335A (en) * | 2014-10-22 | 2015-01-28 | 苏州大学 | Full automatic diode encapsulation mechanism and use method thereof |
| CN104319335B (en) * | 2014-10-22 | 2017-01-11 | 苏州大学 | Full automatic diode encapsulation mechanism and use method thereof |
| CN107342222A (en) * | 2017-07-28 | 2017-11-10 | 阳信金鑫电子有限公司 | A kind of method that hyperfrequency high-voltage diode is manufactured with GPP chip |
| CN108010841A (en) * | 2017-12-01 | 2018-05-08 | 山东理工大学 | A kind of manufacture method of diode and thus obtained diode |
| CN108010841B (en) * | 2017-12-01 | 2019-09-03 | 山东理工大学 | A kind of manufacturing method of diode and thus obtained diode |
| CN115295479A (en) * | 2022-10-08 | 2022-11-04 | 淄博美林电子有限公司 | Packaging method of axial single-tube power device |
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| C06 | Publication | ||
| PB01 | Publication | ||
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| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Open date: 20091230 |