CN103022321B - Chip LED and manufacturing method thereof - Google Patents
Chip LED and manufacturing method thereof Download PDFInfo
- Publication number
- CN103022321B CN103022321B CN201210582715.3A CN201210582715A CN103022321B CN 103022321 B CN103022321 B CN 103022321B CN 201210582715 A CN201210582715 A CN 201210582715A CN 103022321 B CN103022321 B CN 103022321B
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- Prior art keywords
- conductive via
- line layer
- rosin
- chip
- led
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
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Abstract
The invention discloses a chip LED and a manufacturing method thereof. The chip LED comprises a substrate and an LED chip. The substrate comprises a body, a front circuit layer on the upper surface of the body, a back circuit layer on the lower surface of the body, conducing vias on the body, and connecting circuit layers, wherein the connecting circuit layers used for electrically connecting the front circuit layer and the back circuit layer are arranged in the conducting vias. The LED chip is mounted on the front circuit layer by die bonding and wire bonding. The conducting vias are filled with rosin. The manufacturing method includes the sequential steps of substrate manufacturing, rosin filling, die bonding and wire bonding, baking, and cutting. By the use of the chip LED and the manufacturing method thereof, excessive glue can be avoided in compression molding process and product quality can be improved.
Description
Technical field
The present invention relates to LED and preparation method thereof.
Background technology
Existing CHIP-LED forms primarily of substrate, LED chip and optical lens, wherein substrate comprises body, the front line layer be located on body upper surface, the back side line layer be located on body lower surface, is located at the conductive via on body and front line layer and back side line layer is carried out the connection line layer be located on conductive via inwall that is electrically connected, LED chip is arranged on the line layer of front, LED chip realizes the electric connection of LED chip and front line layer by the operation of die bond bonding wire, and optical frames is realized by compression molding operation.Utilizing above-mentioned technique when making CHIP-LED, owing to defining conductive via on substrate, when optical lens compression molding, the phenomenon of excessive glue can be occurred at conductive via place, thus affect product quality.
Summary of the invention
The object of this invention is to provide manufacture method and the CHIP-LED of a kind of CHIP-LED, utilize manufacture method of the present invention and LED structure, the phenomenon occurring excessive glue in compression molding process can be prevented, improve the quality of product.
For achieving the above object, the manufacture method step of CHIP-LED is as follows:
(1) make substrate, wherein substrate comprises body, the front line layer be located on body upper surface, the back side line layer be located on body lower surface, is located at the conductive via on body and front line layer and back side line layer is carried out the connection line layer be located on conductive via inwall that is electrically connected.
(2) at the lower surface of substrate, one backing plate is installed; The upper surface of substrate is installed the steel mesh with through hole, and makes through hole corresponding with the position of conductive via.
(3) in conductive via, fill rosin until conductive via fills up by rosin, wherein, the fusion temperature of rosin is 180-185 DEG C.
(4) after rosin solidification, backing plate and steel mesh is removed.
(5) carry out die bond bonding wire in the crystal bonding area of substrate, die bond baking temperature is 120-160.
(6) optical lens compression molding.
(7) glue curing baking, wherein, the temperature of baking is 140-160 DEG C.
(8) cut, complete the making of CHIP-LED.
As improvement, in above-mentioned steps (5), the rosin be filled in conductive via is utilized to carry out die bond bonding wire as scaling powder.
For reaching above-mentioned second object, a kind of CHIP-LED, comprise substrate, LED chip and optical lens, described substrate comprises body, the front line layer be located on body upper surface, the back side line layer be located on body lower surface, be located at the conductive via on body and front line layer and back side line layer carried out the connection line layer be located on conductive via inwall that is electrically connected; LED chip is installed on the line layer of front by die bond bonding wire operation; Rosin is filled with in conductive via.
The invention has the beneficial effects as follows: owing to being filled with rosin before compression molding in conductive via, then, in compression molding process, lens molding glue can be prevented and to overflow from conductive via the phenomenon of glue, thus improve the quality of product.Due to when manufacturing CHIP-LED of the present invention, the temperature of all process steps is all less than 160 DEG C, and the fusion temperature of rosin is 180-185 DEG C, therefore, no matter in which operation, rosin all can not be caused to melt; In addition, rosin is filled into after in conductive via, in being deposited in always, when being welded in the middle of circuit when CHIP-LED device application, can fast, easily for welding procedure provides rosin and use as scaling powder, rosin is as scaling powder, the oxide on solder and welded mother metal surface can be removed, make the cleannes that metal surface reaches necessary, the oxidation again on surface when it prevents from welding, reducing solder surface tension, improve welding performance. the quality of scaling powder performance, directly has influence on the quality of electronic product.
Accompanying drawing explanation
Fig. 1 is structural representation of the present invention.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is further elaborated.
As shown in Figure 1, CHIP-LED comprises substrate 1 and LED chip 2, and described substrate 1 comprises body 11, the front line layer 12 be located on body upper surface, the back side line layer 13 be located on body lower surface, be located at the conductive via 14 on body and front line layer and back side line layer carried out the connection line layer be located on conductive via inwall that is electrically connected; LED chip 2 is installed on the line layer of front by die bond bonding wire operation; Rosin 5 is filled with in conductive via.
The method manufacturing above-mentioned CHIP-LED is as follows.
(1) substrate 1 is made.
(2) at the lower surface of substrate 1, a backing plate is installed; The upper surface of substrate is installed the steel mesh with through hole, and makes through hole corresponding with the position of conductive via.
(3) in conductive via, fill rosin until conductive via fills up by rosin, wherein, the fusion temperature of rosin is 180-185 DEG C.
(4) after rosin solidification, backing plate and steel mesh is removed.
(5) carry out die bond bonding wire in the crystal bonding area of substrate, in this operation, die bond baking temperature is 120-160.
(6) optical lens 3 compression molding.
(7) glue curing baking, wherein, the temperature of baking is 140-160 DEG C.
(8) cut, complete the making of CHIP-LED.
CHIP-LED of the present invention and manufacture method, owing to being filled with rosin before compression molding in conductive via, then in compression molding process, can prevent the phenomenon that lens molding glue is overflowed from conductive via, thus improve the quality of product.Due to when manufacturing CHIP-LED of the present invention, the temperature of all process steps is all less than 160 DEG C, and the fusion temperature of rosin is 180-185 DEG C, therefore, no matter in which operation, rosin all can not be caused to melt; In addition, rosin is filled into after in conductive via, in being deposited in always, when being welded in the middle of circuit when CHIP-LED device application, can fast, easily for welding procedure provides rosin and use as scaling powder, rosin is as scaling powder, the oxide on solder and welded mother metal surface can be removed, make the cleannes that metal surface reaches necessary, the oxidation again on surface when it prevents from welding, reducing solder surface tension, improve welding performance. the quality of scaling powder performance, directly has influence on the quality of electronic product.
Claims (3)
1. a manufacture method of CHIP-LED, is characterized in that comprising the steps:
(1) make substrate, wherein substrate comprises body, the front line layer be located on body upper surface, the back side line layer be located on body lower surface, is located at the conductive via on body and front line layer and back side line layer is carried out the connection line layer be located on conductive via inwall that is electrically connected;
(2) at the lower surface of substrate, one backing plate is installed; The upper surface of substrate is installed the steel mesh with through hole, and makes through hole corresponding with the position of conductive via;
(3) in conductive via, fill rosin until conductive via fills up by rosin, wherein, the fusion temperature of rosin is 180-185 DEG C;
(4) after rosin solidification, backing plate and steel mesh is removed;
(5) die bond bonding wire is carried out in the crystal bonding area of substrate;
(6) optical lens compression molding;
(7) glue curing baking, wherein, the temperature of baking is 140-160 DEG C;
(8) cut, complete the making of CHIP-LED.
2. the manufacture method of CHIP-LED according to claim 1, is characterized in that: in above-mentioned steps (6), and lens molding glue is overflow from conductive via the phenomenon of glue to utilize the rosin be filled in conductive via to prevent from occurring during optical lens compression molding.
3. a CHIP-LED, comprise substrate, LED chip and optical lens, described substrate comprises body, the front line layer be located on body upper surface, the back side line layer be located on body lower surface, be located at the conductive via on body and front line layer and back side line layer carried out the connection line layer be located on conductive via inwall that is electrically connected; LED chip is installed on the line layer of front by die bond bonding wire operation; It is characterized in that: in conductive via, be filled with rosin; The fusion temperature of filling rosin in conductive via is 180-185 DEG C, is welded in the middle of circuit when CHIP-LED device application, can fast, easily for welding procedure provides rosin and use as scaling powder.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210582715.3A CN103022321B (en) | 2012-12-28 | 2012-12-28 | Chip LED and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210582715.3A CN103022321B (en) | 2012-12-28 | 2012-12-28 | Chip LED and manufacturing method thereof |
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| Publication Number | Publication Date |
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| CN103022321A CN103022321A (en) | 2013-04-03 |
| CN103022321B true CN103022321B (en) | 2015-04-01 |
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| CN201210582715.3A Active CN103022321B (en) | 2012-12-28 | 2012-12-28 | Chip LED and manufacturing method thereof |
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|---|---|---|---|---|
| CN105409054B (en) * | 2013-06-25 | 2018-05-15 | 英特尔公司 | Resonator structure for cavity filter |
| JP2016527689A (en) | 2013-07-31 | 2016-09-08 | アンタヤ・テクノロジーズ・コープＡｎｔａｙａ Ｔｅｃｈｎｏｌｏｇｉｅｓ Ｃｏｒｐ． | Electrical component having a pre-soldered surface with a flux reservoir |
| WO2015078004A1 (en) * | 2013-11-29 | 2015-06-04 | 广州市鸿利光电股份有限公司 | Fabrication method of chip-led and chip-led |
| CN104141904B (en) * | 2014-07-22 | 2017-12-05 | 上海博恩世通光电股份有限公司 | A kind of all-round emitting led power-type filament module of the two-sided die bond of plug-in type |
| CN104638093A (en) * | 2015-02-09 | 2015-05-20 | 深圳市晶台股份有限公司 | Novel LED (Light Emitting Diode) structure encapsulation method |
| CN104851958A (en) * | 2015-05-28 | 2015-08-19 | 成都斯科泰科技有限公司 | Structure for raising highly reflective material LED light source luminous flux output |
| CN105047789A (en) * | 2015-08-11 | 2015-11-11 | 深圳市聚飞光电股份有限公司 | Light-emitting diode (LED) package structure and packaging method thereof |
| CN107068832A (en) * | 2017-04-21 | 2017-08-18 | 深圳市洲明科技股份有限公司 | A kind of wafer-level package LED structure and preparation method thereof |
| CN113991004A (en) * | 2021-10-26 | 2022-01-28 | 东莞市中麒光电技术有限公司 | LED substrate manufacturing method, LED substrate, LED device manufacturing method and LED device |
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| US5821279A (en) * | 1995-04-25 | 1998-10-13 | Goo Chemical Co., Ltd. | Filling material composition used for a process of manufacturing a printed circuit board with plated through-holes |
| CN201508852U (en) * | 2009-09-29 | 2010-06-16 | 鋐鑫电光科技股份有限公司 | LED structure |
| CN102047451A (en) * | 2008-04-30 | 2011-05-04 | 莱登照明詹纳斯多夫股份公司 | LED element with a thin-layer semiconductor element made of gallium nitride |
| CN203013788U (en) * | 2012-12-28 | 2013-06-19 | 广州市鸿利光电股份有限公司 | Chip-LED |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS55102290A (en) * | 1979-01-26 | 1980-08-05 | Sanwa Kagaku Kogyo Kk | Ink for filling hole of copper through hole printed circuit board |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5821279A (en) * | 1995-04-25 | 1998-10-13 | Goo Chemical Co., Ltd. | Filling material composition used for a process of manufacturing a printed circuit board with plated through-holes |
| CN102047451A (en) * | 2008-04-30 | 2011-05-04 | 莱登照明詹纳斯多夫股份公司 | LED element with a thin-layer semiconductor element made of gallium nitride |
| CN201508852U (en) * | 2009-09-29 | 2010-06-16 | 鋐鑫电光科技股份有限公司 | LED structure |
| CN203013788U (en) * | 2012-12-28 | 2013-06-19 | 广州市鸿利光电股份有限公司 | Chip-LED |
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| CN103022321A (en) | 2013-04-03 |
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Address after: 510890 Huadu District, Guangdong, Guangzhou Flower Town, SAST Road, No. 1, No. 1 Patentee after: Hongli Newell group Limited by Share Ltd Address before: 510800 Dongfeng Road West, automobile city, Huadu District, Guangdong, Guangzhou Patentee before: Guangzhou Hongli Tronic Co., Ltd. |