CN110635017B - Miniature backlight substrate packaging method - Google Patents
Miniature backlight substrate packaging method Download PDFInfo
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- CN110635017B CN110635017B CN201910736290.9A CN201910736290A CN110635017B CN 110635017 B CN110635017 B CN 110635017B CN 201910736290 A CN201910736290 A CN 201910736290A CN 110635017 B CN110635017 B CN 110635017B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/58—Optical field-shaping elements
- H01L33/60—Reflective elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
Abstract
A method for packaging a miniature backlight substrate comprises the following steps: material preparation: preparing a double-sided copper clad laminate, wherein the thickness of the double-sided copper clad laminate is 100-1000 mu m, and the thickness of a single-layer copper foil is 12-35 mu m; drilling: drilling the double-sided copper-clad plate to ensure that the drilled holes penetrate through the two layers of copper foils of the double-sided copper-clad plate; copper plating step: copper plating is carried out on the hole wall of the drilled hole of the double-sided copper-clad plate, so that the copper plating layers positioned on the hole wall of the drilled hole are connected with the copper foils on the two sides of the double-sided copper-clad plate, and the copper foils on the two sides of the double-sided copper-clad plate are electrically connected; and (3) hole filling: and melting the white resin used in the anisotropic conductive adhesive manufacturing step, and wrapping the side surface of the miniled chip by surface tension, so that the chip is independently wrapped to form a reflecting cup, and the light reflection brightness is improved.
Description
Technical Field
The invention relates to a miniature backlight substrate packaging method.
Background
The specification of the flip chip is smaller and smaller, and the minimum clearance between the positive electrode and the negative electrode reaches 20 mu m. At present, the minimum gap of common silver paste or tin paste can only realize the mounting of a positive electrode and a negative electrode with the gap of 50 mu m, and the mounting is difficult greatly and is easy to cause the micro short circuit of the positive electrode and the negative electrode.
The number of Miniled backlight substrate chips is huge, and for the traditional silver paste and tin paste process, the mounting failure is caused because the die bonding time is too long and the solvent of the paste is volatile during production.
In addition, the backlight substrate in the prior art has large brightness loss, light diffraction problem, light blockage and influence on visual perception.
Disclosure of Invention
In order to overcome the defects of the prior art, the present invention provides a thinned backlight substrate packaging method, which can improve the light source reflection brightness of the backlight substrate.
The purpose of the invention is realized by adopting the following technical scheme:
a method for packaging a miniature backlight substrate comprises the following steps:
material preparation: preparing a double-sided copper clad laminate, wherein the thickness of the double-sided copper clad laminate is 100-1000 mu m, and the thickness of a single-layer copper foil is 12-35 mu m;
drilling: drilling the double-sided copper-clad plate to ensure that the drilled holes penetrate through the two layers of copper foils of the double-sided copper-clad plate;
copper plating step: copper plating is carried out on the hole wall of the drilled hole of the double-sided copper-clad plate, so that the copper plating layers positioned on the hole wall of the drilled hole are connected with the copper foils on the two sides of the double-sided copper-clad plate, and the copper foils on the two sides of the double-sided copper-clad plate are electrically connected;
and (3) hole filling: filling the bore hole with a white resin or white ink;
a circuit manufacturing step: respectively manufacturing a front circuit and a back circuit on two sides of a double-sided copper-clad plate, and arranging circuit pads on the circuits;
a solder mask manufacturing step: coating the bottom surface of the double-sided copper-clad plate with white solder resist ink, and coating the edge of the top surface of the double-sided copper-clad plate with the white solder resist ink to protect a circuit;
an anti-oxidation layer manufacturing step: plating an anti-oxidation layer on the exposed surface of the circuit bonding pad;
the method comprises the following steps: attaching the anisotropic conductive adhesive/anisotropic conductive adhesive film to a circuit pad on which a thinned chip is to be mounted through white resin;
a step of die bonding: transferring the miniled chip to the corresponding circuit bonding pad, and bonding the miniled chip on the surface of the anisotropic conductive adhesive/anisotropic conductive adhesive film;
and (3) packaging: and welding the miniled chip and the circuit pad together in a reflow soldering mode, after reflow soldering, melting white resin used in the anisotropic conductive adhesive manufacturing step, wrapping the side surface of the miniled chip by surface tension, heating and melting the bottom of the miniled chip by the anisotropic conductive adhesive/the anisotropic conductive adhesive film, and realizing the conduction soldering of the bottom pad of the miniled chip and the substrate pad.
Specifically, the resin layer of the double-sided copper-clad plate is BT resin.
Specifically, the double-sided copper-clad plate is an FR4 double-sided copper-clad plate with the Tg value of more than 150 ℃.
Specifically, in the hole filling step, after the drill hole is filled, the excess resin or ink at the edge of the drill hole opening is ground to remove, so that the edge of the drill hole opening is flat.
Specifically, the oxidation resistant layer is a nickel gold, nickel palladium gold or OSP oxidation resistant film.
Specifically, the sphere diameter of the conductive particles of the anisotropic conductive adhesive/anisotropic conductive adhesive film is 5-10 μm, and the conductive particles are made of bismuth-tin alloy.
Specifically, the miniature chip is a miniature flip chip, and the positive electrode and the negative electrode of the miniature flip chip are electrically connected with the positive electrode pad and the negative electrode pad of the substrate through the anisotropic conductive adhesive/the anisotropic conductive adhesive film respectively.
Specifically, in the encapsulating step: and carrying out reflow soldering on the substrate which is subjected to die bonding according to a specific ACF or ACP reflow temperature curve.
Specifically, in the packaging step, the minified chip is packaged in a mode of mould pressing glue pouring or printing glue sealing, so that packaging glue is formed on the surface of the minified chip, wherein the packaging glue contains fluorescent powder.
Specifically, in the anisotropic conductive adhesive manufacturing step, the thickness of the anisotropic conductive adhesive/anisotropic conductive adhesive film is 10 to 12 μm.
Compared with the prior art, the invention has the beneficial effects that:
1. the minified backlight substrate packaging method can realize the packaging of the minimum gap between the anode and the cathode of the chip being 20 mu m, and the packaging mode is simple and easy to operate, and can avoid the occurrence of micro short circuit of the anode and the cathode.
2. The adhesive of the miniled backlight substrate packaging method is resin (white resin), the volatility of the resin is weaker than that of a solvent of silver paste or tin paste, the resin is volatilized less in the packaging process, and bonding failure caused by volatilization of the adhesive in the production process is avoided.
3. According to the miniled backlight substrate packaging method, in the packaging step, the miniled chip and the circuit pad are welded together in a reflow soldering mode, after reflow soldering, the white resin used in the anisotropic conductive adhesive manufacturing step is melted, and the side face of the miniled chip is wrapped by surface tension, so that the chip is independently wrapped to form the reflecting cup, the reflection brightness of light is improved, the diffraction of the light is isolated, and therefore light blocking is achieved, and visual perception is improved. Furthermore, the reflecting cup can realize a light condensation function, increase the backlight brightness, fully save energy and solve the problem of cross-beam diffraction.
Drawings
FIG. 1 is a schematic diagram of a double-sided copper-clad plate;
FIG. 2 is a schematic illustration of a drilling step;
FIG. 3 is a schematic view of a copper plating step;
FIG. 4 is a schematic illustration of a hole filling step;
FIG. 5 is a schematic diagram of a circuit fabrication step;
FIG. 6 is a schematic diagram of a solder mask making step;
FIG. 7 is a schematic diagram of the step of forming an anti-oxidation layer;
FIG. 8 is a schematic diagram of a process for forming anisotropic conductive film;
FIG. 9 is a schematic diagram of a die bonding step;
FIG. 10 is a schematic view of a miniled backlight substrate after reflow soldering;
fig. 11 is a schematic diagram of the packaged miniled backlight substrate.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
A method for packaging a miniature backlight substrate comprises the following steps:
material preparation step (with reference to fig. 1): preparing a double-sided copper clad laminate, wherein the thickness of the double-sided copper clad laminate is 100-1000 mu m, and the thickness of the single-layer copper foil is 12-35 mu m. Specifically, the resin layer of the double-sided copper-clad plate is BT resin. Specifically, the double-sided copper-clad plate is an FR4 double-sided copper-clad plate with the Tg value of more than 150 ℃.
Drilling step (with reference to fig. 2): and drilling the double-sided copper-clad plate to ensure that the drilled holes penetrate through the two layers of copper foils of the double-sided copper-clad plate.
Copper plating step (see fig. 3): and (4) carrying out copper plating on the hole wall of the drilled hole of the double-sided copper-clad plate, so that the copper plating layer positioned on the hole wall of the drilled hole is connected with the copper foils on the two sides of the double-sided copper-clad plate, and the copper foils on the two sides of the double-sided copper-clad plate are electrically connected.
Hole filling step (see fig. 4): the bore holes are filled with a white resin or white ink. Specifically, in the hole filling step, after the drill hole is filled, excess resin or ink at the edge of the drill hole opening is ground off to flatten the edge of the drill hole opening.
Circuit fabrication step (see fig. 5): and respectively manufacturing a front circuit and a back circuit on two sides of the double-sided copper-clad plate, and arranging circuit pads on the circuits.
Solder resist layer manufacturing step (see fig. 6): and coating the bottom surface of the double-sided copper-clad plate by using white solder resist ink, and coating the edge of the top surface of the double-sided copper-clad plate by using white solder resist ink to protect the circuit.
An anti-oxidation layer manufacturing step (with reference to fig. 7): and plating an anti-oxidation layer on the exposed surface of the circuit bonding pad. Specifically, in the step of fabricating the anti-oxidation layer, the anti-oxidation layer is a nickel gold, nickel palladium gold or OSP anti-oxidation film.
Manufacturing the anisotropic conductive adhesive (with reference to fig. 8): and attaching the anisotropic conductive adhesive to a circuit pad on which a minified chip is to be attached through white resin. Specifically, in the step of manufacturing the anisotropic conductive adhesive, the sphere diameter of conductive particles of the anisotropic conductive adhesive is 5-10 μm, and the conductive particles adopt bismuth-tin alloy.
A die bonding step (see fig. 9): and transferring the miniled chip to a corresponding circuit pad, and adhering the miniled chip to the surface of the anisotropic conductive adhesive. Specifically, in the die bonding step, the minified chip is a minified flip chip, and the positive electrode and the negative electrode of the minified flip chip are respectively electrically connected with the positive electrode pad and the negative electrode pad of the substrate through the anisotropic conductive adhesive to realize conduction.
Packaging step (see fig. 10 and 11): the miniled chip and the circuit pad are welded together in a reflow soldering mode, after reflow soldering, white resin used in the anisotropic conductive adhesive manufacturing step is melted, the side face of the miniled chip is wrapped by surface tension, and the anisotropic conductive adhesive film is melted at the bottom of the miniled chip, so that conduction soldering of the bottom pad of the miniled chip and the substrate pad is achieved. Specifically, in the packaging step, reflow soldering is performed on the substrate after die bonding according to a specific ACF or ACP reflow temperature curve. Specifically, in the packaging step, the minified chip is packaged in a mode of mold pressing glue pouring or printing glue sealing, so that packaging glue is formed on the surface of the minified chip, wherein the packaging glue contains fluorescent powder.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are within the protection scope of the present invention.
Claims (9)
1. A method for packaging a miniature backlight substrate is characterized by comprising the following steps:
material preparation: preparing a double-sided copper clad laminate, wherein the thickness of the double-sided copper clad laminate is 100-1000 mu m, and the thickness of a single-layer copper foil is 12-35 mu m;
drilling: drilling the double-sided copper-clad plate to ensure that the drilled holes penetrate through the two layers of copper foils of the double-sided copper-clad plate;
copper plating step: copper plating is carried out on the hole wall of the drilled hole of the double-sided copper-clad plate, so that the copper plating layers positioned on the hole wall of the drilled hole are connected with the copper foils on the two sides of the double-sided copper-clad plate, and the copper foils on the two sides of the double-sided copper-clad plate are electrically connected;
and (3) hole filling: filling the bore hole with a white resin or white ink;
a circuit manufacturing step: respectively manufacturing a front circuit and a back circuit on two sides of a double-sided copper-clad plate, and arranging circuit pads on the circuits;
a solder mask manufacturing step: coating the bottom surface of the double-sided copper-clad plate with white solder resist ink, and coating the edge of the top surface of the double-sided copper-clad plate with the white solder resist ink to protect a circuit;
an anti-oxidation layer manufacturing step: plating an anti-oxidation layer on the exposed surface of the circuit bonding pad;
the method comprises the following steps: attaching the anisotropic conductive adhesive/anisotropic conductive adhesive film to a circuit pad on which a thinned chip is to be mounted through white resin;
a step of die bonding: transferring the miniled chip to the corresponding circuit bonding pad, and bonding the miniled chip on the surface of the anisotropic conductive adhesive/anisotropic conductive adhesive film;
and (3) packaging: and welding the miniled chip and the circuit pad together in a reflow soldering mode, after reflow soldering, melting the white resin used in the anisotropic conductive adhesive manufacturing step, wrapping the side surface of the miniled chip by surface tension, and melting the bottom of the miniled chip by the anisotropic conductive adhesive/anisotropic conductive adhesive film so as to conduct and weld the bottom pad of the miniled chip and the pad of the substrate.
2. The packaged backlight substrate packaging method of claim 1, wherein: the resin layer of the double-sided copper-clad plate is BT resin.
3. The packaged backlight substrate packaging method of claim 1, wherein: the double-sided copper-clad plate is an FR4 double-sided copper-clad plate with the Tg value of more than 150 ℃.
4. The packaged backlight substrate packaging method of claim 1, wherein: in the hole filling step, after the drill hole is filled, the redundant resin or ink at the edge of the drill hole opening is ground to remove, so that the edge of the drill hole opening is smooth.
5. The packaged backlight substrate packaging method of claim 1, wherein: the oxidation resistant layer is a nickel gold, nickel palladium gold or OSP oxidation resistant film.
6. The packaged backlight substrate packaging method of claim 1, wherein: the sphere diameter of the conductive particles of the anisotropic conductive adhesive/anisotropic conductive adhesive film is 5-10 mu m, and the conductive particles adopt bismuth-tin alloy.
7. The packaged backlight substrate packaging method of claim 1, wherein: the miniature chip is a miniature flip chip, and the positive electrode and the negative electrode of the miniature flip chip are electrically connected with the positive electrode pad and the negative electrode pad of the substrate respectively through the anisotropic conductive adhesive/the anisotropic conductive adhesive film.
8. The packaged backlight substrate packaging method of claim 1, wherein: in the packaging step, the minified chip is packaged in a mode of mould pressing glue pouring or printing glue sealing, so that packaging glue is formed on the surface of the minified chip, wherein the packaging glue contains fluorescent powder.
9. The packaged backlight substrate packaging method of claim 1, wherein: in the anisotropic conductive adhesive manufacturing step, the thickness of the anisotropic conductive adhesive/anisotropic conductive adhesive film is 10 to 12 μm.
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| CN201910736290.9A CN110635017B (en) | 2019-08-09 | 2019-08-09 | Miniature backlight substrate packaging method |
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| CN201910736290.9A CN110635017B (en) | 2019-08-09 | 2019-08-09 | Miniature backlight substrate packaging method |
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| CN110635017B true CN110635017B (en) | 2021-07-09 |
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| CN111867245A (en) * | 2020-06-05 | 2020-10-30 | 深圳市隆利科技股份有限公司 | MiniLED substrate, module and module manufacturing method |
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| CN103515487A (en) * | 2012-06-21 | 2014-01-15 | 位速科技股份有限公司 | Method for manufacturing ceramic package substrate used in light-emitting wafers |
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| CN104202907A (en) * | 2014-07-21 | 2014-12-10 | 本立遠東有限公司 | Process for manufacturing electroless copper electroplating via hole type double-sided circuit board through UV printing method |
| CN104662118A (en) * | 2012-09-24 | 2015-05-27 | 迪睿合电子材料有限公司 | Anisotropic conductive adhesive |
| CN105531836A (en) * | 2013-09-26 | 2016-04-27 | 迪睿合株式会社 | Light emitting device, anisotropic conductive adhesive and method for manufacturing light emitting device |
| KR20190092331A (en) * | 2019-07-19 | 2019-08-07 | 엘지전자 주식회사 | Display device using micro led and manufacturing method thereof |
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2019
- 2019-08-09 CN CN201910736290.9A patent/CN110635017B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1354526A (en) * | 2000-11-21 | 2002-06-19 | 财团法人工业技术研究院 | Light-emitting element wafer-covering package method and its structure |
| CN103515487A (en) * | 2012-06-21 | 2014-01-15 | 位速科技股份有限公司 | Method for manufacturing ceramic package substrate used in light-emitting wafers |
| CN104662118A (en) * | 2012-09-24 | 2015-05-27 | 迪睿合电子材料有限公司 | Anisotropic conductive adhesive |
| CN103813655A (en) * | 2012-11-09 | 2014-05-21 | 镇江华扬信息科技有限公司 | Manufacturing method for improving reliability of printed circuit board (PCB) including bonding pad structure |
| CN105531836A (en) * | 2013-09-26 | 2016-04-27 | 迪睿合株式会社 | Light emitting device, anisotropic conductive adhesive and method for manufacturing light emitting device |
| CN104202907A (en) * | 2014-07-21 | 2014-12-10 | 本立遠東有限公司 | Process for manufacturing electroless copper electroplating via hole type double-sided circuit board through UV printing method |
| KR20190092331A (en) * | 2019-07-19 | 2019-08-07 | 엘지전자 주식회사 | Display device using micro led and manufacturing method thereof |
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Effective date of registration: 20210917 Address after: 529152 floor 4, side a and floor 4, side B, block 206, new fortune environmental protection industrial park, yamen Town, Xinhui District, Jiangmen City, Guangdong Province Patentee after: Meiqi circuit (Jiangmen) Co.,Ltd. Address before: 516000 huangyuyong Sanjiaoling Shizhi Industrial Park, Daya Bay, Huizhou City, Guangdong Province Patentee before: Huizhou Zhijin Electronic Technology Co.,Ltd. |