JP2007214162A - Wired substrate, and method for manufacturing same - Google Patents

Wired substrate, and method for manufacturing same Download PDF

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JP2007214162A
JP2007214162A JP2006029190A JP2006029190A JP2007214162A JP 2007214162 A JP2007214162 A JP 2007214162A JP 2006029190 A JP2006029190 A JP 2006029190A JP 2006029190 A JP2006029190 A JP 2006029190A JP 2007214162 A JP2007214162 A JP 2007214162A
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Prior art keywords
bonding
substrate body
wiring board
heat radiating
substrate
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Makoto Nagai
誠 永井
Mitsuo Shiraishi
光雄 白石
Masahito Morita
雅仁 森田
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Niterra Co Ltd
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NGK Spark Plug Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Led Device Packages (AREA)

Abstract

<P>PROBLEM TO BE SOLVED: To provide a wired substrate comprising a substrate body formed of an insulating material, a heat radiating member bonded to the substrate body, and an electronic component bonded to the heat radiating member assuring strong bonding portions and a degree of freedom for design, and to provide a method for manufacturing the same wired substrate. <P>SOLUTION: The method for manufacturing a wired substrate 1a comprises a first step of bonding a light emitting element (electronic component) 15 on the heat radiating member 12 via a bonding member 16; and a second step of bonding the heat radiating member 12 bonded with the light emitting element 15 to the wired substrate 1 with another bonding member 11, in such a manner that the heat radiating member 12 is provided between a bottom surface 6 of a cavity 5 opening to a front surface 3 of the wired substrate 2 formed of ceramic (insulating material) and a rear surface 4. In this manufacturing method, a melting point or a cure temperature of the bonding member 16 for bonding the light emitting element 15 and the heat radiating member 12 is higher than the melting point or cure temperature of another bonding member 11, for bonding the substrate body 2 of the wired substrate 1 and the heat radiating member 12. <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

本発明は、絶縁材からなる基板本体の表面と裏面との間を貫通する放熱部材の上に電子部品を搭載した配線基板およびその製造方法に関する。   The present invention relates to a wiring board on which an electronic component is mounted on a heat dissipation member penetrating between a front surface and a back surface of a substrate body made of an insulating material, and a manufacturing method thereof.

例えば、金属製で且つ放熱性を有する金属製基板の周辺の上方に、融点が７００〜９００℃のＡｇ−Ｃｕ合金などのロウ材や接着剤、あるいは５００℃以下で溶融する低融点ガラスを介して、セラミック基板を固定し、上記金属製基板の中央表面に樹脂接着剤やＳｎ−Ｐｂ合金のハンダを介して発光素子を搭載した発光素子収納用パッケージが提案されている（例えば、特許文献１参照）。
上記発光素子収納用パッケージによれば、十分な光反射性および放熱性を有し、大電流を流し得る発光素子のような発熱量の多い発光素子にも対応できる。 For example, a brazing material such as an Ag—Cu alloy having a melting point of 700 to 900 ° C. or an adhesive, or a low melting point glass that melts at 500 ° C. or less is disposed above the periphery of a metal and heat radiating metal substrate. Thus, there has been proposed a light emitting element storage package in which a ceramic substrate is fixed and a light emitting element is mounted on a central surface of the metal substrate via a resin adhesive or Sn—Pb alloy solder (for example, Patent Document 1). reference).
According to the light emitting element storage package, the light emitting element has sufficient light reflectivity and heat dissipation, and can deal with a light emitting element that generates a large amount of heat, such as a light emitting element capable of flowing a large current.

特開２００４−２２８２４０号公報（第１〜８頁、図１）JP 2004-228240 A (pages 1 to 8, FIG. 1)

ところで、前記発光素子収納用パッケージは、予め金属製基板の周辺の上方にセラミック基板をＡｇ−Ｃｕ合金のロウ材などを介して固定した後、金属製基板の中央表面にＳｎ−Ｐｂ合金のハンダなどを介して発光素子を搭載している。このため、上記ロウ材などの融点は、上記ハンダをリフローするための融点よりも高くする必要がある。
また、前記発光素子収納用パッケージのように、金属製基板（放熱部材）とセラミック基板とからなる配線基板では、外部に露出するパッドなどの表面に予め同一の金属メッキ層が被覆されている。このため、予めセラミック基板が接合された金属製基板の中央表面に、発光素子をハンダを介して搭載する際には、上記金属メッキ層の種類による制約を受ける場合がある。その結果、当該金属メッキ層をそのまま利用した際には、上記金属製基板と発光素子との良好な接続および搭載状態にできなくなると共に、配線基板自体の設計上の自由度も低下する、という問題があった。 By the way, in the light emitting element storage package, after a ceramic substrate is fixed in advance above the periphery of the metal substrate via a brazing material of Ag—Cu alloy, solder of Sn—Pb alloy is provided on the center surface of the metal substrate. A light-emitting element is mounted via the above. For this reason, the melting point of the brazing material or the like needs to be higher than the melting point for reflowing the solder.
Further, in the wiring board composed of a metal substrate (heat radiating member) and a ceramic substrate as in the light emitting element storage package, the same metal plating layer is previously coated on the surface of pads exposed to the outside. For this reason, when a light emitting element is mounted on the center surface of a metal substrate to which a ceramic substrate has been bonded in advance via solder, there is a case where it is restricted by the type of the metal plating layer. As a result, when the metal plating layer is used as it is, the metal substrate and the light emitting element cannot be well connected and mounted, and the degree of freedom in designing the wiring board itself is also reduced. was there.

本発明は、背景技術において説明した問題点を解決し、絶縁材からなる基板本体と、かかる基板本体に接合する放熱部材と、かかる放熱部材に接合する電子部品とを備え、上記各接合部が強固で且つ設計上の自由度を有する配線基板およびその製造方法を提供する、ことを課題とする。   The present invention solves the problems described in the background art, and includes a substrate body made of an insulating material, a heat dissipation member bonded to the substrate body, and an electronic component bonded to the heat dissipation member. It is an object of the present invention to provide a wiring board that is strong and has design freedom and a method for manufacturing the wiring board.

課題を解決するための手段および発明の効果Means for Solving the Problems and Effects of the Invention

本発明は、前記課題を解決するため、絶縁材からなる基板本体および放熱部材を接合する接合材と、放熱部材および電子部品を接合する接合材とにおける融点またはキュア温度の関係を特定すると共に、かかる接合の順序を規定する、ことに着想して成されたものである。
即ち、本発明の配線基板（請求項１）は、絶縁材からなり表面および裏面を有する基板本体と、かかる基板本体の表面と裏面との間を貫通し、且つかかる基板本体に接合された放熱部材と、かかる放熱部材の上に接合された電子部品と、を備え、上記電子部品と放熱部材とを接合する接合材の融点またはキュア温度は、上記基板本体と放熱部材とを接合する別の接合材の融点またはキュア温度よりも高い、ことを特徴とする。 In order to solve the above problems, the present invention specifies the relationship between the melting point or the curing temperature in the bonding material for bonding the substrate body and the heat dissipation member made of an insulating material, and the bonding material for bonding the heat dissipation member and the electronic component, The idea is to define the order of such joining.
That is, the wiring board according to the present invention (Claim 1) includes a substrate main body made of an insulating material and having a front surface and a back surface, and heat dissipation that penetrates between the front and back surfaces of the substrate main body and is bonded to the substrate main body. And a melting point or a curing temperature of a bonding material for bonding the electronic component and the heat dissipation member is different from that for bonding the substrate body and the heat dissipation member. It is characterized by being higher than the melting point or curing temperature of the bonding material.

これによれば、予め、放熱部材の上にハンダなどの接合材を介して電子部品を接合した後、当該放熱部材を基板本体の表面と裏面との間を貫通する貫通孔に有機系接着剤などの接合材を介して接着（接合）する際に、かかる接着剤を加熱するキュア温度では上記ハンダは、溶融ないし軟化しない。このため、一般的に広く使用されているロウ材を含むハンダや有機系接着剤を用いて、基板本体と放熱部材、および、当該放熱部材と電子部品の２組の接合を強固にできる。しかも、基板本体におけるパッドなどの表面に被覆したメッキ層の種類によって、電子部品と放熱部材との接合に悪影響を与えない。
従って、電子部品と基板本体との導通が確実に取れ、電子部品が発する熱を放熱部材を介して効率良く放熱できると共に、設計上の自由度が高い配線基板とすることができる。 According to this, after an electronic component is bonded on the heat dissipation member in advance via a bonding material such as solder, the organic adhesive is inserted into the through hole penetrating the heat dissipation member between the front surface and the back surface of the substrate body. When bonding (bonding) through a bonding material such as the above, the solder does not melt or soften at a curing temperature at which the adhesive is heated. For this reason, it is possible to firmly bond the two sets of the substrate body and the heat radiating member and the heat radiating member and the electronic component by using solder or an organic adhesive containing a brazing material that is widely used in general. In addition, the type of the plating layer coated on the surface of the substrate body such as a pad does not adversely affect the bonding between the electronic component and the heat dissipation member.
Therefore, electrical connection between the electronic component and the board body can be ensured, and heat generated by the electronic component can be efficiently radiated through the heat radiating member, and a wiring board having a high degree of design freedom can be obtained.

尚、前記基板本体を形成する絶縁材には、アルミナなどのセラミック、低温焼成セラミックの一種であるガラス−セラミック、あるいはエポキシ系などの各種の樹脂が含まれる。
また、前記基板本体の表面は、平坦な表面のほか、かかる表面に開口するキャビティの底面も含まれる。当該キャビティには、矩形（正方形または長方形）の底面および四角筒形の側面、円形の底面および円筒形の側面、円形の底面およびほぼ円錐形の側面、あるいは、長円形の底面およびほぼ長円錐形の側面からなる形態などが含まれる。
更に、前記接合材には、ハンダ（ロウ材を含む低融点の金属または合金）あるいは有機系接着剤が含まれ、上記ハンダにはその融点が、有機系接着剤にはそのキュア（硬化）温度が適用される。従って、前記接合材および別の接合材には、ハンダ同士、有機系接着剤同士、あるいは、ハンダおよび有機系接着剤の３通りの組み合わせの何れかが適用される。
また、前記放熱部材には、高い熱伝導性を有する例えばＣｕまたはＣｕ合金、あるいはＡｌまたはＡｌ合金からなるものが用いられる。
加えて、前記電子部品には、ＩＣチップ、ＬＥＤまたは半導体レーザなどからなる発光素子、ＳＡＷフィルタ、ダイオード、トランジスタなどが含まれる。 The insulating material forming the substrate body includes ceramics such as alumina, glass-ceramics that are a kind of low-temperature fired ceramics, and various resins such as epoxy.
Further, the surface of the substrate body includes a flat surface as well as a bottom surface of a cavity opening on the surface. The cavity may have a rectangular (square or rectangular) bottom and square cylindrical side, a circular bottom and cylindrical side, a circular bottom and a substantially conical side, or an oval bottom and a substantially long cone. The form which consists of a side is included.
Further, the bonding material includes solder (a low melting point metal or alloy including a brazing material) or an organic adhesive, and the solder has a melting point, and the organic adhesive has a curing (curing) temperature. Applies. Therefore, either one of solders, organic adhesives, or three combinations of solder and organic adhesives is applied to the bonding material and the other bonding material.
The heat radiating member is made of, for example, Cu or Cu alloy having high thermal conductivity, or Al or Al alloy.
In addition, the electronic component includes a light-emitting element such as an IC chip, an LED or a semiconductor laser, a SAW filter, a diode, a transistor, and the like.

また、本発明には、前記電子部品と放熱部材とを接合する接合材の融点またはキュア温度は、前記基板本体と放熱部材とを接合する別の接合材の融点またはキュア温度よりも、５０℃以上高い、配線基板（請求項２）も含まれる。
これによれば、放熱部材の上に接合材を介して電子部品を接合した後、当該放熱部材を基板本体の表面と裏面との間を貫通する貫通孔に別の接合材を介して接合する際に、かかる別の接合材を加熱する融点またはキュア温度付近において、上記接合材の溶融ないし軟化を確実に防ぐことができる。 In the present invention, the melting point or curing temperature of the bonding material for bonding the electronic component and the heat dissipation member is 50 ° C. than the melting point or curing temperature of another bonding material for bonding the substrate body and the heat dissipation member. A wiring board (claim 2) which is higher than the above is also included.
According to this, after joining an electronic component on a heat radiating member via a bonding material, the heat radiating member is bonded to a through-hole penetrating between the front surface and the back surface of the substrate body via another bonding material. In this case, melting or softening of the bonding material can be surely prevented in the vicinity of the melting point or the curing temperature at which the other bonding material is heated.

一方、本発明による配線基板の製造方法（請求項３）は、放熱部材の上に電子部品を接合材を介して接合する第１工程と、かかる電子部品が接合された放熱部材を、絶縁材からなる基板本体の表面と裏面との間を貫通するように、配線基板に対し別の接合材で接合する第２工程と、を含み、上記電子部品と放熱部材とを接合する接合材の融点またはキュア温度は、上記基板本体と放熱部材とを接合する接合材の融点またはキュア温度よりも高い、ことを特徴とする。   On the other hand, the method for manufacturing a wiring board according to the present invention (Claim 3) includes a first step of joining an electronic component on a heat radiating member via a bonding material, and a heat radiating member to which the electronic component is bonded. A second step of bonding to the wiring board with another bonding material so as to penetrate between the front surface and the back surface of the substrate body made of, and the melting point of the bonding material for bonding the electronic component and the heat dissipation member Alternatively, the curing temperature is characterized by being higher than the melting point or the curing temperature of the bonding material for bonding the substrate body and the heat dissipation member.

これによれば、放熱部材の上にハンダなどの接合材を介して電子部品を接合した第１工程の後で、当該放熱部材を基板本体の表面と裏面との間を貫通する貫通孔に有機系接着剤などの別の接合材を介して接着（接合）する第２工程が行われる。このため、別の接合材による接着時に、当該別の接合材を加熱するキュア温度では上記接合材は、溶融ないし軟化しない。この結果、一般的に広く使用されているロウ材を含むハンダや有機系接着剤を用いて、基板本体と放熱部材、および、当該放熱部材と電子部品の２組の接合を強固にできる。しかも、基板本体におけるパッドなどの表面に予め被覆したメッキ層の種類によって、電子部品と放熱部材との接合に悪影響を与えることも解消できる。
従って、電子部品と基板本体との導通が確実に取れ、電子部品が発する熱を放熱部材を介して効率良く放熱できると共に、設計上の自由度が高い配線基板を確実に製造することが可能となる。 According to this, after the first step of joining the electronic component on the heat radiating member via the bonding material such as solder, the heat radiating member is organically formed in the through hole penetrating between the front surface and the back surface of the substrate body. A second step of bonding (bonding) through another bonding material such as a system adhesive is performed. For this reason, at the time of adhesion by another bonding material, the bonding material does not melt or soften at a curing temperature at which the other bonding material is heated. As a result, it is possible to firmly bond the two sets of the substrate body and the heat radiating member, and the heat radiating member and the electronic component by using solder or an organic adhesive containing a brazing material that is generally widely used. In addition, it is possible to eliminate the adverse effect on the bonding between the electronic component and the heat radiating member depending on the kind of the plating layer previously coated on the surface of the substrate body such as the pad.
Therefore, it is possible to reliably establish electrical connection between the electronic component and the board body, to efficiently dissipate the heat generated by the electronic component through the heat dissipation member, and to reliably manufacture a wiring board having a high degree of design freedom. Become.

付言すれば、本発明には、前記放熱部材の上端に位置するフランジは、前記基板本体のキャビティの底面に露出している、配線基板も含まれ得る。
これによる場合、上記フランジの表面にハンダまたは有機系接着剤などの接合材を介して電子部品を広い面積で接合できると共に、かかるフランジの裏面における周辺と基板本体の表面または当該表面に開口するキャビティの底面との間では、別の接合材を介して放熱部材と基板本体との強固な接合が可能となる。 In other words, the present invention may include a wiring board in which the flange located at the upper end of the heat radiating member is exposed on the bottom surface of the cavity of the board body.
In this case, an electronic component can be bonded to the surface of the flange via a bonding material such as solder or an organic adhesive over a wide area, and the periphery on the back surface of the flange and the surface of the substrate body or a cavity opened to the surface In this case, the heat radiating member and the substrate main body can be firmly bonded to each other through another bonding material.

以下において、本発明を実施するための最良の形態について説明する。
図１〜図３は、本発明における配線基板の製造方法とこれにより得られた本発明の配線基板１ａの概略とを示す概略図または断面図である。
図１の左側に示すように、予め、Ｃｕからなる放熱部材１２と、ＬＥＤからなる発光素子（電子部品）１５とを用意した。放熱部材１２は、四角柱を呈するシンク本体１３と、その上端から側方に向けて一体に張り出した平面視が矩形（正方形または長方形）のフランジ１４と、からなる。
先ず、放熱部材１２のフランジ１４上に、融点が約２８０〜３００℃のＡｕ−Ｓｎ合金からなるシート状のハンダ（接合材）１６を介して、発光素子１５を載置した後、ハンダ１６の上記融点の直上に温度に加熱（リフロー）した。
その結果、図１の右側に示すように、放熱部材１２のフランジ１４上に、一端溶けた後に再凝固したハンダ１６を介して、発光素子１５を接合したユニットＵが得られた（第１工程）。 In the following, the best mode for carrying out the present invention will be described.
1 to 3 are schematic views or cross-sectional views showing a method of manufacturing a wiring board according to the present invention and an outline of the wiring board 1a of the present invention obtained thereby.
As shown on the left side of FIG. 1, a heat radiating member 12 made of Cu and a light emitting element (electronic component) 15 made of LED were prepared in advance. The heat radiating member 12 includes a sink main body 13 having a quadrangular column and a flange 14 having a rectangular shape (square or rectangular shape) in plan view extending integrally from the upper end toward the side.
First, after placing the light emitting element 15 on the flange 14 of the heat radiating member 12 via the sheet-like solder (joining material) 16 made of an Au—Sn alloy having a melting point of about 280 to 300 ° C., the solder 16 Heated (reflowed) to a temperature just above the melting point.
As a result, as shown on the right side of FIG. 1, a unit U was obtained in which the light emitting element 15 was joined to the flange 14 of the heat radiating member 12 via the solder 16 that was melted at one end and then re-solidified (first step). ).

一方、図２に示すように、発光素子１５を搭載する前の配線基板１を別途用意した。配線基板１は、表面３および裏面４を有する基板本体２、かかる基板本体２の表面３に開口するキャビティ５、当該キャビティ５の底面６と基板本体２の裏面４との間を貫通する貫通孔１０、上記キャビティ５の側面７に形成した光反射層８、および基板本体２の裏面４に形成した一対のパッド９を備えている。
上記基板本体２は、図２に示すように、アルミナ（セラミック：絶縁材）を主成分とする複数のグリーンシートを積層して焼成したセラミック層ｃ１〜ｃ４からなる。かかるセラミック層ｃ１〜ｃ４間およびそれぞれの内部には、ＷまたはＭｏからなる所定パターンの配線層と、これらの間を接続するビア導体（何れも図示せず）とが形成されている。 On the other hand, as shown in FIG. 2, the wiring board 1 before mounting the light emitting element 15 was prepared separately. The wiring board 1 includes a substrate body 2 having a front surface 3 and a back surface 4, a cavity 5 opening in the front surface 3 of the substrate body 2, and a through-hole penetrating between the bottom surface 6 of the cavity 5 and the back surface 4 of the substrate body 2. 10, a light reflecting layer 8 formed on the side surface 7 of the cavity 5, and a pair of pads 9 formed on the back surface 4 of the substrate body 2.
As shown in FIG. 2, the substrate body 2 includes ceramic layers c1 to c4 obtained by laminating and firing a plurality of green sheets mainly composed of alumina (ceramic: insulating material). Between the ceramic layers c1 to c4 and in each of them, a wiring layer having a predetermined pattern made of W or Mo and via conductors (not shown) for connecting them are formed.

また、図２に示すように、キャビティ５は、平面視が円形の底面６と、かかる底面６の周辺から基板本体２の表面３に向かって斜めに立ち上がる全体がほぼ円錐形の側面７と、からなる。かかる側面７の上には、ＷまたはＭｏからなるメタライズ層、Ｎｉメッキ層、および表層のＡｇメッキ層からなる光反射層８が全面に形成されている。尚、セラミック層ｃ３，ｃ４が主にアルミナからなり、側面７が白色を呈し且つ光反射が可能な場合には、光反射層８を省略しても良い。
更に、上記キャビティ５の底面６の中央部と、基板本体２の裏面４の中央部との間には、断面が正方形の貫通孔１０が貫通している。加えて、基板本体２の裏面４における対向する一辺と対向する一対の側面とにまたがって、ＷまたはＭｏからなる断面ほぼＬ字形を呈する一対のパッド９が形成されている。 As shown in FIG. 2, the cavity 5 has a bottom surface 6 that is circular in a plan view, and a side surface 7 that is substantially conical and rises obliquely from the periphery of the bottom surface 6 toward the surface 3 of the substrate body 2. Consists of. On the side surface 7, a light reflecting layer 8 made of a metallized layer made of W or Mo, a Ni plated layer, and a surface Ag plated layer is formed on the entire surface. When the ceramic layers c3 and c4 are mainly made of alumina, the side surface 7 is white and light reflection is possible, the light reflection layer 8 may be omitted.
Further, a through-hole 10 having a square cross section penetrates between the central portion of the bottom surface 6 of the cavity 5 and the central portion of the back surface 4 of the substrate body 2. In addition, a pair of pads 9 having a substantially L-shaped cross section made of W or Mo are formed across the opposing side and the pair of opposing side surfaces on the back surface 4 of the substrate body 2.

前記のような配線基板１は、以下のようにして製造した。
予め、アルミナ粉末粒子、樹脂バインダ、可塑剤、および溶剤などからなる原料を所要量ずつ混合して、セラミックスラリを製作した。かかるセラミックスラリに対しドクターブレード法を施して、厚みが約５０〜７５０μｍのグリーンシートを４枚形成した。尚、かかるグリーンシートは、多数個取り用である大版タイプのものとしても良い。
上記のうち、２枚のグリーンシートに対し、断面が円形のパンチと、かかるパンチの断面よりも大径の受入孔を有するダイとを用いる打ち抜き加工を施すことで、上記パンチと受入孔との剪断作用によって、ほぼ円錐形で且つ互いに連通可能な大小２種類の貫通孔を個別に形成した。これら２種類の貫通孔が互いに連通するように、上記２枚のグリーンシートを積層することで、ほぼ円錐形の貫通孔が形成された。かかる貫通孔の内面に、ＷまたはＭｏ粉末を含む導電性ペーストを印刷した。尚、かかる導電性ペーストの印刷を省略しても良い。 The wiring board 1 as described above was manufactured as follows.
A ceramic slurry was produced by mixing raw materials composed of alumina powder particles, a resin binder, a plasticizer, a solvent, and the like in advance. The ceramic slurry was subjected to a doctor blade method to form four green sheets having a thickness of about 50 to 750 μm. The green sheet may be of a large plate type for taking a large number.
Among the above, by punching two green sheets with a punch having a circular cross section and a die having a receiving hole having a diameter larger than the cross section of the punch, the punch and the receiving hole Through the shearing action, two types of large and small through-holes each having a substantially conical shape and communicating with each other were individually formed. By laminating the two green sheets so that these two types of through holes communicate with each other, a substantially conical through hole was formed. A conductive paste containing W or Mo powder was printed on the inner surface of the through hole. Note that printing of the conductive paste may be omitted.

一方、残り２枚の平坦なグリーンシートにおける表面と裏面との中央部に、打ち抜き加工を施して、同じ断面正方形の貫通孔を形成した。また、かかる２枚のグリーンシートの表面および裏面の少なくとも一方に、スクリーン印刷により、ＷまたはＭｏ粉末を含む導電性ペーストを所定パターンで印刷して配線層を形成する共に、上記各グリーンシートにおける表面と裏面との間を貫通するビアホールに上記導電性ペーストを充填してビア導体を形成した。尚、下層側のグリーンシートの裏面と側面には、追って前記パッド９となる導電性ペーストを形成した。
次いで、上記２枚の平坦なグリーンシートを積層し、更にその上に前記ほぼ円錐形を呈する貫通孔を有し、係る貫通孔の内面に導電性ペーストを印刷した前記２枚のグリーンシートを積層した。この結果、表面３、裏面４、表面３に開口し且つ底面６および側面７からなるキャビティ５、および底面６と裏面４との間を貫通する貫通孔１０を有するグリーンシート積層体が得られた。 On the other hand, a punching process was performed on the center part of the front and back surfaces of the remaining two flat green sheets to form through holes having the same square cross section. In addition, a conductive layer containing W or Mo powder is printed in a predetermined pattern on at least one of the front and back surfaces of the two green sheets by screen printing to form a wiring layer. A via conductor was formed by filling the via hole penetrating between the first and second surfaces with the conductive paste. A conductive paste to be the pad 9 was formed on the back and side surfaces of the lower layer green sheet.
Next, the two flat green sheets are laminated, and further, the two green sheets having the substantially conical through-holes thereon and the conductive paste printed on the inner surface of the through-holes are laminated. did. As a result, a green sheet laminate having a front surface 3, a back surface 4, a cavity 5 having an opening on the front surface 3 and having a bottom surface 6 and a side surface 7 and a through hole 10 penetrating between the bottom surface 6 and the back surface 4 was obtained. .

次に、かかるグリーンシート積層体を図示しない焼成炉に挿入し、所定の温度帯に加熱して焼成した。この結果、前記４枚のグリーンシートは、前記セラミック層ｃ１〜ｃ４になって基板本体２が得られると共に、かかる基板本体２の側面と裏面４とにまたがる断面ほぼＬ字形のメタライズ層と、キャビティ５の側面７を覆うほぼ円錐形のメタライズ層とが形成された。
そして、焼成された基板本体２の裏面４側に位置する上記断面ほぼＬ字形の各メタライズ層に対し、ＮｉメッキおよびＡｕメッキを施してメッキ層を被覆して、前記パッド９を形成した。更に、キャビティ５の側面７を覆う上記ほぼ円錐形のメタライズ層に対し、ＮｉメッキおよびＡｇメッキを施して、光反射層８を形成した。その結果、図２に示す配線基板１が得られた。 Next, the green sheet laminate was inserted into a firing furnace (not shown), heated to a predetermined temperature zone, and fired. As a result, the four green sheets become the ceramic layers c1 to c4 to obtain the substrate body 2, and the metallized layer having a substantially L-shaped cross section extending over the side surface and the back surface 4 of the substrate body 2, and the cavity 5 and a substantially conical metallization layer covering the side surface 7 of the film.
Then, the pad 9 was formed by applying Ni plating and Au plating to each metallized layer having a substantially L-shaped cross section located on the back surface 4 side of the fired substrate body 2 to cover the plated layer. Further, the light reflecting layer 8 was formed by applying Ni plating and Ag plating to the substantially conical metallized layer covering the side surface 7 of the cavity 5. As a result, the wiring board 1 shown in FIG. 2 was obtained.

次いで、図２中の矢印で示すように、配線基板１の基板本体２における貫通孔１０内に、前記ユニットＵにおける放熱部材１２のシンク本体１３を挿入した。かかるシンク本体１３の側面およびフランジ１４の底面には、予めキュア温度（約１５０℃）が前記ハンダ１６の融点２８０〜３００℃よりも１００℃以上低いエポキシ系接着剤（有機系接着剤：別の接合材）１１を被覆した。
配線基板１の貫通孔１０に上記ユニットＵを構成する放熱部材１２のシンク本体１３を挿入した状態で、かかる配線基板１と発光素子１５および放熱部材１２からなるユニットＵとを、図示しない加熱炉に挿入し、エポキシ系接着剤１１のキュア温度の直上の温度に加熱（リフロー）した。かかる加熱時において、ユニットＵ側のハンダ１６が配線基板１側のエポキシ系接着剤１１のキュア温度よりも１００℃以上高く、上記ハンダ１６は何らの影響を受けなかったため、発光素子１５と放熱部材１２との接合に悪影響を生じなかった。 Next, as indicated by an arrow in FIG. 2, the sink body 13 of the heat radiating member 12 in the unit U was inserted into the through hole 10 in the board body 2 of the wiring board 1. On the side surface of the sink body 13 and the bottom surface of the flange 14, an epoxy adhesive (organic adhesive: another adhesive having a curing temperature (about 150 ° C.) lower than the melting point 280 to 300 ° C. of the solder 16 by 100 ° C. or more in advance. Bonding material) 11 was coated.
In a state where the sink body 13 of the heat radiating member 12 constituting the unit U is inserted into the through hole 10 of the wiring board 1, the wiring board 1 and the unit U composed of the light emitting element 15 and the heat radiating member 12 are connected to a heating furnace (not shown). And heated (reflowed) to a temperature just above the curing temperature of the epoxy adhesive 11. During the heating, the solder 16 on the unit U side is 100 ° C. or more higher than the cure temperature of the epoxy adhesive 11 on the wiring board 1 side, and the solder 16 was not affected at all. 12 had no adverse effect on the bonding with No. 12.

その結果、図３に示すように、基板本体２の貫通孔１０にシンク本体１３を挿入させた状態で、かかる基板本体２と放熱部材１２とをエポキシ系接着剤１１を介して接合できた（第２工程）。これにより、キャビティ５の底面６に発光素子１５を搭載した配線基板１ａが得られた。
以上のような配線基板１ａおよびその製造方法によれば、発光素子１５の搭載前の配線基板１における光反射層８の表層に被覆したＡｇメッキ層や、一対のパッド９の表層に被覆したＡｕメッキ層は、別途に形成されたユニットＵにおける発光素子１５と放熱部材１２とを接合するハンダ１６に何らの影響を及ぼさない。これにより、配線基板１の設計・組立および発光素子１５と放熱部材１２の設計・組立に対し、それぞれ自由度を高めることができた。 As a result, as shown in FIG. 3, the substrate main body 2 and the heat radiating member 12 can be bonded via the epoxy adhesive 11 in a state where the sink main body 13 is inserted into the through hole 10 of the substrate main body 2 ( Second step). As a result, a wiring substrate 1 a having the light emitting element 15 mounted on the bottom surface 6 of the cavity 5 was obtained.
According to the wiring board 1a and the manufacturing method thereof as described above, the Ag plating layer coated on the surface layer of the light reflecting layer 8 on the wiring board 1 before the light emitting element 15 is mounted, or the Au layer coated on the surface layer of the pair of pads 9. The plating layer has no influence on the solder 16 that joins the light emitting element 15 and the heat dissipation member 12 in the separately formed unit U. As a result, the degree of freedom can be increased with respect to the design / assembly of the wiring board 1 and the design / assembly of the light emitting element 15 and the heat radiating member 12.

しかも、前記ユニットＵにおいて発光素子１５と放熱部材１２とを接合するハンダ１６の融点は、ヒートシンク１２と基板本体２の貫通孔１０を形成するセラミック層ｃ１，ｃ２とを接合するエポキシ系接着剤１１のキュア温度よりも１００℃以上高い。このため、放熱部材１２と基板本体２とを接合する際の加熱時に、発光素子１５と放熱部材１２とを予め接合したハンダ１６に対し、何らの悪影響も与えなかったので、発光素子１５の搭載を安定させ、配線基板１の内部配線や各パッド９との導通を安定して取ることができた。
尚、キャビティ５の底面６に搭載する発光素子１５を複数個としても良く、かかる形態では、大きい断面積のシンク本体１３および広い面積のフランジ１４を有する放熱部材１２を用いるようにする。あるいは、複数個の放熱部材１２のフランジ１４上に、ハンダ１６を介して複数の発光素子１５を個別に接合した複数個のユニットＵを、複数の貫通孔１０に個別に挿入してエポキシ系接着剤１１を介して基板本体２に接合するようにしても良い。 Moreover, the melting point of the solder 16 that joins the light emitting element 15 and the heat radiating member 12 in the unit U is the epoxy adhesive 11 that joins the heat sink 12 and the ceramic layers c1 and c2 that form the through holes 10 of the substrate body 2. 100 ° C. or higher than the cure temperature. For this reason, since there was no adverse effect on the solder 16 in which the light emitting element 15 and the heat radiating member 12 were bonded in advance at the time of heating when the heat radiating member 12 and the substrate body 2 were bonded, the mounting of the light emitting element 15 was not performed. It was possible to stabilize the electrical connection between the internal wiring of the wiring board 1 and each pad 9.
Note that a plurality of light emitting elements 15 mounted on the bottom surface 6 of the cavity 5 may be provided. In this embodiment, the heat dissipating member 12 having the sink body 13 having a large cross-sectional area and the flange 14 having a large area is used. Alternatively, a plurality of units U in which a plurality of light emitting elements 15 are individually joined via the solder 16 on the flanges 14 of the plurality of heat radiating members 12 are individually inserted into the plurality of through holes 10 and epoxy-based bonded. The substrate 11 may be bonded via the agent 11.

図４，図５は、異なる形態の配線基板２０ａおよびその製造方法に関する。
図４の上方に示すように、予め、前記同様の放熱部材１２のフランジ１４上に、ＩＣチップ（電子部品）２８を、前記と同じハンダ（接合材）１６を介して接合（第１工程）することで、ユニットＵ１を形成した。
一方、図４の下方に示すように、異なる形態の配線基板２０を別途に用意した。かかる配線基板２０は、表面２３および裏面２４を有する基板本体２２、かかる基板本体２２の表面２３に開口するキャビティ２５、当該キャビティ２５の底面２６と基板本体２２の裏面２４との間を貫通する貫通孔２１、および基板本体２２の裏面２４と側面とにまたがって形成した一対のパッド９を備えている。 4 and 5 relate to a wiring board 20a of a different form and a manufacturing method thereof.
As shown in the upper part of FIG. 4, an IC chip (electronic component) 28 is previously bonded onto the flange 14 of the same heat radiating member 12 via the same solder (bonding material) 16 as described above (first step). As a result, the unit U1 was formed.
On the other hand, as shown in the lower part of FIG. 4, different types of wiring boards 20 were prepared separately. The wiring board 20 includes a substrate body 22 having a front surface 23 and a back surface 24, a cavity 25 opening in the front surface 23 of the substrate body 22, and a through hole penetrating between the bottom surface 26 of the cavity 25 and the back surface 24 of the substrate body 22. A pair of pads 9 formed across the hole 21 and the back surface 24 and the side surface of the substrate body 22 are provided.

上記基板本体２２は、図４に示すように、前記同様の複数のグリーンシートを積層して焼成したセラミック層ｃ１，ｃ２，ｃ５，ｃ６からなる。かかるセラミック層ｃ１，ｃ２，ｃ５，ｃ６間には、ＷまたはＭｏからなる所定パターンの配線層が形成され、これらの間を接続するビア導体（何れも図示せず）がセラミック層ｃ１などを貫通して形成されている。
また、図４に示すように、キャビティ２５は、平面視が正方形の底面２６と、かかる底面２６の周辺から基板本体２２の表面２３に垂直に立ち上がる全体が四角筒形の側面２７と、からなる。更に、かかるキャビティ２５の底面２６の中央部と、基板本体２２の裏面２４の中央部との間には、断面が正方形の貫通孔２１が貫通している。加えて、基板本体２２の裏面２４と対向する一対の側面とにまたがって、前記同様の一対のパッド９が形成されている。 As shown in FIG. 4, the substrate body 22 includes ceramic layers c1, c2, c5, and c6 obtained by laminating and firing a plurality of green sheets similar to those described above. Between the ceramic layers c1, c2, c5, and c6, a wiring layer having a predetermined pattern made of W or Mo is formed, and via conductors (not shown) passing through these layers penetrate the ceramic layer c1 and the like. Is formed.
As shown in FIG. 4, the cavity 25 includes a bottom surface 26 having a square shape in plan view, and a side surface 27 having a rectangular tube shape as a whole rising vertically from the periphery of the bottom surface 26 to the surface 23 of the substrate body 22. . Further, a through-hole 21 having a square cross section penetrates between the central portion of the bottom surface 26 of the cavity 25 and the central portion of the back surface 24 of the substrate body 22. In addition, a pair of pads 9 similar to the above are formed across a pair of side surfaces facing the back surface 24 of the substrate body 22.

前記のような配線基板２０は、以下のようにして製造した。
予め前記と同様に、厚みが約５０〜７５０μｍのグリーンシートを４枚形成した。尚、かかるグリーンシートは、多数個取り用である大版タイプのものとしても良い。
４枚のグリーンシートにおける表面および裏面の少なくとも一方に、ＷまたはＭｏ粉末を含む導電性ペースト（図示せず）を印刷して配線層を形成すると共に、各グリーンシートにおける表面と裏面との間を貫通するビアホールに上記導電性ペーストを充填してビア導体（図示せず）を形成した。
上記２枚ずつ２組のグリーンシート対し、断面寸法が異なる断面正方形の２種類のパンチと、これらのパンチの各断面と相似形の受入孔を有する２種類のダイと、を各組別に用いる打ち抜き加工を施すことで、比較的大きな正方形または小さな正方形で且つ互いに同心で連通可能な貫通孔を各組ごとに個別に形成した。これら２組ごとの貫通孔が互いに連通し、且つ各貫通孔の中心が同軸になるようにして、上記４枚のグリーンシートを積層した。 The wiring board 20 as described above was manufactured as follows.
In the same manner as described above, four green sheets having a thickness of about 50 to 750 μm were formed in advance. The green sheet may be of a large plate type for taking a large number.
A conductive paste (not shown) containing W or Mo powder is printed on at least one of the front and back surfaces of the four green sheets to form a wiring layer, and between the front and back surfaces of each green sheet. A via conductor (not shown) was formed by filling the via hole penetrating the conductive paste.
Punching using two types of punches having square cross-sections having different cross-sectional dimensions and two types of dies having receiving holes similar in shape to the cross-sections of the two pairs of green sheets. By performing the processing, through-holes that are relatively large squares or small squares and that can communicate with each other concentrically are individually formed for each group. The four green sheets were laminated such that the two sets of through holes communicated with each other and the centers of the through holes were coaxial.

この結果、表面２３、裏面２４、表面２３に開口する底面２６および側面２７からなるキャビティ５、および底面２７と裏面２４との間を貫通する貫通孔２１を有するグリーンシート積層体が得られた。
次に、かかるグリーンシート積層体を図示しない焼成炉に挿入し、所定の温度帯に加熱して焼成した。この結果、前記４枚のグリーンシートは、前記セラミック層ｃ１，ｃ２，ｃ５，ｃ６になって基板本体２２が得られると共に、かかる基板本体２２の側面と裏面２４とにまたがる断面ほぼＬ字形のメタライズ層が形成された。そして、焼成された基板本体２２の裏面２４側に位置する上記各メタライズ層に対し、ＮｉメッキおよびＡｕメッキを施してメッキ層を被覆して、一対の前記パッド９を形成した。その結果、図４に示す配線基板２０が得られた。 As a result, a green sheet laminate having the front surface 23, the back surface 24, the cavity 5 formed of the bottom surface 26 and the side surface 27 opening on the front surface 23, and the through hole 21 penetrating between the bottom surface 27 and the back surface 24 was obtained.
Next, the green sheet laminate was inserted into a firing furnace (not shown), heated to a predetermined temperature zone, and fired. As a result, the four green sheets become the ceramic layers c 1, c 2, c 5, and c 6 to obtain the substrate body 22, and the metallization having a substantially L-shaped cross section extending over the side surface and the back surface 24 of the substrate body 22. A layer was formed. Then, the metallized layer located on the back surface 24 side of the fired substrate body 22 was subjected to Ni plating and Au plating to cover the plating layer, thereby forming the pair of pads 9. As a result, the wiring board 20 shown in FIG. 4 was obtained.

次いで、図４中の矢印で示すように、配線基板２０の基板本体２２における貫通孔２１内に、前記ユニットＵ１における放熱部材１２のシンク本体１３を挿入した。かかるシンク本体１３の側面およびフランジ１４の底面には、予めエポキシ系接着剤（別の接合材）１１を被覆した。配線基板２０の貫通孔２１に上記ユニットＵ１を構成する放熱部材１２のシンク本体１３を挿入した状態で、かかる配線基板２０とＩＣチップ２８および放熱部材１２からなるユニットＵ１とを、図示しない加熱炉に挿入し、エポキシ系接着剤１１のキュア温度の直上の温度に加熱（リフロー）した。かかる加熱時において、ユニットＵ１側のハンダ１６は、配線基板２０側のエポキシ系接着剤１１のキュア温度よりも高く、何らの影響を受けないため、ＩＣチップ２８と放熱部材１２との接合に悪影響を生じなかった。
その結果、図５に示すように、基板本体２２の貫通孔２１にシンク本体１３を挿入させた状態で、かかる基板本体２２と放熱部材１２とをエポキシ系接着剤１１を介して接着（接合）できた（第２工程）。これにより、キャビティ２５の底面２６にＩＣチップ２８を搭載した配線基板２０ａが得られた。 Next, as indicated by an arrow in FIG. 4, the sink body 13 of the heat radiating member 12 in the unit U <b> 1 was inserted into the through hole 21 in the board body 22 of the wiring board 20. The side surface of the sink body 13 and the bottom surface of the flange 14 were previously coated with an epoxy adhesive (another bonding material) 11. In a state where the sink body 13 of the heat radiating member 12 constituting the unit U1 is inserted into the through hole 21 of the wiring board 20, the wiring board 20 and the unit U1 composed of the IC chip 28 and the heat radiating member 12 are not shown in a heating furnace. And heated (reflowed) to a temperature just above the curing temperature of the epoxy adhesive 11. During such heating, the solder 16 on the unit U1 side is higher than the cure temperature of the epoxy adhesive 11 on the wiring board 20 side and is not affected at all, and thus adversely affects the bonding between the IC chip 28 and the heat dissipation member 12. Did not occur.
As a result, as shown in FIG. 5, the substrate body 22 and the heat dissipation member 12 are bonded (bonded) via the epoxy adhesive 11 in a state where the sink body 13 is inserted into the through hole 21 of the substrate body 22. (Second step). As a result, a wiring substrate 20 a having the IC chip 28 mounted on the bottom surface 26 of the cavity 25 was obtained.

以上のような配線基板２０ａおよびその製造方法によれば、ＩＣチップ２８を搭載する前の配線基板２０における一対のパッド９の表層に被覆したＡｕメッキ層は、別途に形成されたユニットＵ１におけるＩＣチップ２８と放熱部材１２とを接合するハンダ１６に何らの影響を及ぼさなかった。これにより、配線基板２０の設計・組立およびＩＣチップ２８と放熱部材１２との設計・接合に対し、それぞれ自由度を高めることができた。
しかも、ユニットＵ１で用いたハンダ１６の融点は、放熱部材１２と基板本体２２とを接合するエポキシ系接着剤１１のキュア温度よりも高いため、放熱部材１２と基板本体２２とを接合する際のエポキシ系接着剤１１の加熱時に、ＩＣチップ２８と放熱部材１２とを予め接合したハンダ１６に対し、何らの悪影響も与えなかった。この結果、ＩＣチップ２８の搭載を安定させ、配線基板２０の内部配線や各パッド９との導通を安定して取れる配線基板２０ａを得ることができた。 According to the wiring board 20a and the manufacturing method thereof as described above, the Au plating layer covering the surface layer of the pair of pads 9 on the wiring board 20 before mounting the IC chip 28 is the IC in the unit U1 formed separately. The solder 16 that joins the chip 28 and the heat radiating member 12 was not affected at all. As a result, the degree of freedom can be increased for the design / assembly of the wiring board 20 and the design / joining of the IC chip 28 and the heat dissipation member 12.
In addition, the melting point of the solder 16 used in the unit U1 is higher than the curing temperature of the epoxy adhesive 11 that joins the heat dissipation member 12 and the substrate body 22, and therefore, when the heat dissipation member 12 and the substrate body 22 are joined. When the epoxy adhesive 11 was heated, no adverse effect was exerted on the solder 16 in which the IC chip 28 and the heat dissipation member 12 were bonded in advance. As a result, it was possible to obtain the wiring substrate 20a that can stably mount the IC chip 28 and can stably connect the internal wiring of the wiring substrate 20 and the pads 9.

図６は、更に異なる形態の配線基板３０ａの概略を示す断面図である。
図６に示すように、配線基板３０ａは、配線基板３０における基板本体３２の表面３３に、ＩＣチップ２８を搭載したものである。
配線基板３０は、表面３３および裏面３４を有する基板本体３２、かかる基板本体３２の表面３３と裏面３４との間を貫通する貫通孔３１、および基板本体３２の裏面３４に形成した一対のパッド９を備えている。基板本体３２は、前記同様の複数のグリーンシートを積層・焼成したセラミック層ｃ１，ｃ２，ｃ７，ｃ８からなり、これらの間および内部には、ＷまたはＭｏからなる所定パターンの配線層と、これらを接続するビア導体（何れも図示せず）とが形成されている。 FIG. 6 is a cross-sectional view showing an outline of a wiring board 30a of still another form.
As shown in FIG. 6, the wiring substrate 30 a is obtained by mounting the IC chip 28 on the surface 33 of the substrate body 32 in the wiring substrate 30.
The wiring board 30 includes a substrate body 32 having a front surface 33 and a back surface 34, a through hole 31 penetrating between the front surface 33 and the back surface 34 of the substrate body 32, and a pair of pads 9 formed on the back surface 34 of the substrate body 32. It has. The substrate body 32 is composed of ceramic layers c1, c2, c7, and c8 obtained by laminating and firing a plurality of green sheets similar to those described above. Between and inside these are wiring layers having a predetermined pattern made of W or Mo, and these layers. Via conductors (both not shown) are formed.

かかる基板本体３２の表面３３と裏面３４の中央部との間には、断面が正方形の貫通孔３１が貫通すると共に、基板本体３２の裏面３４における対向する一対の辺と対向する一対の側面とにまたがって、前記同様の一対のパッド９が形成されている。かかる配線基板３０は、前記配線基板１，２０と同様にして製造された。
予め、比較的長い（高い）シンク本体３７を有する放熱部材３６のフランジ３８の上に、ＩＣチップ２８を前記と同じハンダ１６を介して接合（第１工程）してユニットＵ２を形成した。
次いで、配線基板３０の基板本体３２における貫通孔３１内に、上記ユニットＵ２における放熱部材３６のシンク本体３７を挿入した。かかるシンク本体３７の側面およびフランジ３８の底面には、予めエポキシ系接着剤（別の接合材）１１を被覆した。 Between the front surface 33 of the substrate body 32 and the central portion of the back surface 34, a through hole 31 having a square cross section penetrates, and a pair of side surfaces facing a pair of opposing sides on the back surface 34 of the substrate body 32. A pair of pads 9 similar to those described above are formed. The wiring board 30 was manufactured in the same manner as the wiring boards 1 and 20.
The unit U2 was formed in advance by joining the IC chip 28 onto the flange 38 of the heat radiating member 36 having the relatively long (high) sink body 37 via the same solder 16 as described above (first step).
Next, the sink body 37 of the heat radiating member 36 in the unit U2 was inserted into the through hole 31 in the substrate body 32 of the wiring board 30. The side surface of the sink body 37 and the bottom surface of the flange 38 were previously coated with an epoxy adhesive (another bonding material) 11.

配線基板３０の貫通孔３１に上記ユニットＵ２を構成する放熱部材３６のシンク本体３７を挿入した状態で、かかる配線基板３０とＩＣチップ２８および放熱部材３６からなるユニットＵ２とを、図示しない加熱炉に挿入し、エポキシ系接着剤１１のキュア温度直上の温度に加熱（リフロー）して接合（第２工程）した。かかる加熱時において、ユニットＵ２側のハンダ１６の融点は、エポキシ系接着剤１１のキュア温度よりも高く、何らの影響を受けないため、ＩＣチップ２８と放熱部材３６との接合に悪影響を生じなかった。
その結果、図６に示すように、基板本体３２の貫通孔３１にシンク本体３７を挿入させた状態で、かかる基板本体３２と放熱部材３６とをエポキシ系接着剤１１を介して接合できた。これにより、基板本体３２の表面３３にＩＣチップ２８を搭載した配線基板３０ａが得られた。 In a state where the sink body 37 of the heat radiating member 36 constituting the unit U2 is inserted into the through hole 31 of the wiring board 30, the wiring board 30 and the unit U2 composed of the IC chip 28 and the heat radiating member 36 are not shown in the heating furnace. And then heated (reflowed) to a temperature just above the curing temperature of the epoxy adhesive 11 and joined (second step). At the time of such heating, the melting point of the solder 16 on the unit U2 side is higher than the curing temperature of the epoxy adhesive 11 and is not affected at all, so that the bonding between the IC chip 28 and the heat radiating member 36 is not adversely affected. It was.
As a result, as shown in FIG. 6, the substrate body 32 and the heat radiating member 36 can be bonded via the epoxy adhesive 11 in a state where the sink body 37 is inserted into the through hole 31 of the substrate body 32. As a result, a wiring substrate 30 a having the IC chip 28 mounted on the surface 33 of the substrate body 32 was obtained.

以上のような配線基板３０ａおよびその製造方法によっても、ＩＣチップ２８の搭載前の配線基板３０における各パッド９の表層に被覆したＡｕメッキ層は、別途に形成されたユニットＵ２のＩＣチップ２８と放熱部材３６とを接合するハンダ１６に何らの影響を及ぼさなかった。これにより、配線基板３０の設計・組立およびＩＣチップ２８と放熱部材３６との設計・接合に対し、それぞれ自由度を高めることができた。
しかも、ユニットＵ２で用いたハンダ１６の融点は、放熱部材３６と基板本体３２とを接合するエポキシ系接着剤１１のキュア温度よりも高いため、放熱部材３６と基板本体３２とを接合する際の加熱時に、ＩＣチップ２８と放熱部材３６とを予め接合した当該ハンダ１６は、何らの悪影響も受けかった。この結果、ＩＣチップ２８の搭載を安定させ、配線基板３０の内部配線や各パッド９との導通を安定して取れる配線基板３０ａを得ることができた。 Also by the wiring board 30a and the manufacturing method thereof as described above, the Au plating layer covering the surface layer of each pad 9 on the wiring board 30 before mounting the IC chip 28 is separated from the IC chip 28 of the unit U2 formed separately. The solder 16 joined to the heat radiating member 36 was not affected at all. As a result, the degree of freedom can be increased for the design / assembly of the wiring board 30 and the design / joining of the IC chip 28 and the heat dissipation member 36.
Moreover, since the melting point of the solder 16 used in the unit U2 is higher than the curing temperature of the epoxy adhesive 11 that joins the heat dissipation member 36 and the substrate body 32, the heat dissipation member 36 and the substrate body 32 are joined together. The solder 16 in which the IC chip 28 and the heat dissipation member 36 were bonded in advance during the heating did not have any adverse effects. As a result, it was possible to obtain the wiring board 30a that can stabilize the mounting of the IC chip 28 and can stably connect the internal wiring of the wiring board 30 and the pads 9.

図７は、前記配線基板３０ａの応用形態である配線基板４０ａの製造方法の概略図であり、図８は、かかる配線基板４０ａの垂直断面図である。
図７の上方に示すように、予めシンク本体３９が長い放熱部材３６のフランジ３８上に、ＩＣチップ（電子部品）２８を、前記同様のＡｕ−Ｓｎ合金からなるハンダ（接合材）４６を介して接合（第１工程）することで、ユニットＵ３を形成した。
一方、図７の下方に示すように、前記と同じ製造方法で貫通孔３１やパッド９などを有する基板本体３２を形成した後、その裏面３４の各パッド９に融点が約７００〜８００℃のＡｇロウ４２を介して、１９４合金などのＣｕ合金からなる導体ピン５０を垂直に複数本接合することにより、配線基板４０を形成した。 FIG. 7 is a schematic view of a manufacturing method of a wiring board 40a which is an application form of the wiring board 30a, and FIG. 8 is a vertical sectional view of the wiring board 40a.
As shown in the upper part of FIG. 7, an IC chip (electronic component) 28 is placed on a flange 38 of a heat dissipation member 36 having a long sink body 39 in advance via a solder (joining material) 46 made of the same Au—Sn alloy. Then, the unit U3 was formed by joining (first step).
On the other hand, as shown in the lower part of FIG. 7, after the substrate body 32 having the through holes 31 and the pads 9 is formed by the same manufacturing method as described above, the melting point of each pad 9 on the back surface 34 is about 700 to 800 ° C. A plurality of conductor pins 50 made of a Cu alloy such as 194 alloy were vertically joined via the Ag solder 42 to form the wiring board 40.

前記シンク本体３９の側面に融点が約１８６℃のＳｎ−Ｐｂ合金（共晶ハンダ）からなるシート状のハンダ（別の接合材）４１を巻き付け、図７中の矢印で示すように、ユニットＵ３のシンク本体３９を配線基板４０の貫通孔３１に挿入した。
かかる状態で、ユニットＵ３および配線基板４０を、上記ハンダ４１の融点直上の温度に加熱（リフロー）して接合（第２工程）した。かかる加熱時において、ユニットＵ３側のハンダ４６は、配線基板２０側のハンダ４１の融点より少なくとも５０℃以上高く、何らの影響を受けなかったため、ＩＣチップ２８と放熱部材３６との接合に悪影響を生じなかった。
その結果、図８に示すように、基板本体３２の貫通孔３１にシンク本体３９を挿入させた状態で、かかる基板本体３２と放熱部材３６とをハンダ４１を介して接着（接合）できた。これにより、基板本体３２の表面３３にＩＣチップ２８を搭載し、裏面３４に複数の導体ピン５０を垂下させた配線基板４０ａが得られた。尚、放熱部材３６のシンク本体３９の下端は、基板本体３２の裏面３４よりも下方に突出した。 A sheet-like solder (another bonding material) 41 made of an Sn—Pb alloy (eutectic solder) having a melting point of about 186 ° C. is wound around the side surface of the sink main body 39, and as indicated by an arrow in FIG. The sink body 39 was inserted into the through hole 31 of the wiring board 40.
In this state, the unit U3 and the wiring board 40 were heated (reflowed) to a temperature just above the melting point of the solder 41 and joined (second step). During the heating, the solder 46 on the unit U3 side is at least 50 ° C. higher than the melting point of the solder 41 on the wiring board 20 side and is not affected at all, and thus adversely affects the bonding between the IC chip 28 and the heat dissipation member 36. Did not occur.
As a result, as shown in FIG. 8, the substrate body 32 and the heat dissipation member 36 can be bonded (bonded) via the solder 41 with the sink body 39 inserted into the through hole 31 of the substrate body 32. As a result, the wiring board 40a in which the IC chip 28 is mounted on the front surface 33 of the substrate body 32 and the plurality of conductor pins 50 are suspended on the back surface 34 is obtained. The lower end of the sink body 39 of the heat radiating member 36 protrudes downward from the back surface 34 of the substrate body 32.

以上のような配線基板４０ａおよびその製造方法によれば、ＩＣチップ２８を搭載する前の配線基板４０における一対のパッド９および導体ピン５０の表面に被覆したＡｕメッキ層は、別途に形成されたユニットＵ３におけるＩＣチップ２８と放熱部材３６とを接合するハンダ４６に何らの影響を及ぼさなかった。これにより、配線基板４０の設計・組立およびＩＣチップ２８と放熱部材３６との設計・接合に対し、それぞれ自由度を高めることができた。
しかも、ユニットＵ３で用いたハンダ４６の融点は、放熱部材３６と基板本体２２とを接合するハンダ４１の融点よりも高いため、放熱部材３６と基板本体３２とを接合する際のハンダ４１の加熱時に、ＩＣチップ２８と放熱部材３６とを予め接合したハンダ４６に対し、何らの悪影響も与えなかった。この結果、ＩＣチップ２８の搭載を安定させ、配線基板４０の内部配線や各パッド９との導通を安定して取れる配線基板４０ａを得ることができた。更に、放熱部材３６のシンク本体３９の下端部が基板本体３２の裏面３４から下方に突出したため、ＩＣチップ２８からの熱を一層効率良く放熱することができた。 According to the wiring board 40a and the manufacturing method thereof as described above, the Au plating layer covering the surfaces of the pair of pads 9 and the conductor pins 50 in the wiring board 40 before mounting the IC chip 28 is formed separately. The solder 46 that joins the IC chip 28 and the heat dissipation member 36 in the unit U3 was not affected at all. As a result, the degree of freedom can be increased for the design / assembly of the wiring board 40 and the design / joining of the IC chip 28 and the heat dissipation member 36.
In addition, since the melting point of the solder 46 used in the unit U3 is higher than the melting point of the solder 41 that joins the heat radiating member 36 and the substrate body 22, the solder 41 is heated when the heat radiating member 36 and the substrate body 32 are joined. Occasionally, no adverse effect was exerted on the solder 46 in which the IC chip 28 and the heat radiation member 36 were previously joined. As a result, it was possible to obtain the wiring board 40a that can stably mount the IC chip 28 and can stably connect the internal wiring of the wiring board 40 and the pads 9. Further, since the lower end portion of the sink main body 39 of the heat radiating member 36 protrudes downward from the back surface 34 of the substrate main body 32, the heat from the IC chip 28 can be radiated more efficiently.

本発明は、以上において説明した各形態に限定されるものではない。
前記基板本体２などを形成する絶縁材は、低温焼成セラミックの一種であるガラス−セラミック、あるいはエポキシ系などの各種の樹脂としても良い。
また、前記接合材および別の接合材は、それぞれ有機系接着剤とし、これを用いて電子部品と放熱部材とを接着（接合）する前記第１工程、および放熱部材と配線基板の基板本体とを接着（接合）する前記第２工程を行っても良い。
更に、複数個の電子部品を接合材を介して１つの放熱部材の上に接合したり、あるいは、複数個の電子部品を接合材を介して複数の放熱部材ごとの上に個別に接合しても良い。かかる後者により得られる複数のユニットを、１つの配線基板における基板本体の表面（キャビティの底面を含む）と裏面との間に放熱部材を貫通・挿入させた状態で別の接合材によって接合するようにしても良い。
加えて、放熱部材の上に接合する電子部品は、ＳＡＷフィルタ、ダイオード、トランジスタなどとしても良い。 The present invention is not limited to the embodiments described above.
The insulating material forming the substrate body 2 and the like may be glass-ceramic, which is a kind of low-temperature fired ceramic, or various resins such as epoxy.
The bonding material and the other bonding material are each an organic adhesive, and the first step of bonding (bonding) the electronic component and the heat dissipation member using the organic adhesive, and the heat dissipation member and the substrate body of the wiring board The second step of adhering (bonding) may be performed.
Further, a plurality of electronic components are bonded onto one heat dissipation member via a bonding material, or a plurality of electronic components are individually bonded onto each of a plurality of heat dissipation members via a bonding material. Also good. A plurality of units obtained by the latter are joined by another joining material in a state where a heat radiation member is inserted and inserted between the front surface (including the bottom surface of the cavity) and the back surface of the substrate body in one wiring board. Anyway.
In addition, the electronic component bonded on the heat dissipation member may be a SAW filter, a diode, a transistor, or the like.

本発明の製造方法における一工程を示す概略図。Schematic which shows 1 process in the manufacturing method of this invention. 図１に続く工程を示す概略図。Schematic which shows the process following FIG. 上記製造方法により得られた本発明の配線基板を示す垂直断面図。The vertical sectional view which shows the wiring board of this invention obtained by the said manufacturing method. 異なる形態の配線基板を得るための製造工程を示す概略図。Schematic which shows the manufacturing process for obtaining the wiring board of a different form. 上記製造方法により得られた異なる形態の配線基板を示す垂直断面図。The vertical sectional view which shows the wiring board of a different form obtained by the said manufacturing method. 更に異なる形態の配線基板を示す垂直断面図。Furthermore, the vertical sectional view which shows the wiring board of a different form. 図６の配線基板の応用形態の配線基板の製造方法を示す概略図。Schematic which shows the manufacturing method of the wiring board of the application form of the wiring board of FIG. 図６の配線基板の応用形態の配線基板を示す垂直断面図。FIG. 7 is a vertical sectional view showing a wiring board according to an application form of the wiring board of FIG. 6.

符号の説明Explanation of symbols

１ａ,２０ａ,３０ａ，４０ａ…配線基板
２，２２，３２…………………基板本体
３，２３，３３…………………表面
４，２４，３４…………………裏面
５，２５…………………………キャビティ
６，２６…………………………キャビティの底面（表面）
１１………………………………エポキシ系接着剤（別の接合材）
１２，３６………………………放熱部材
１５………………………………発光素子（電子部品）
１６，４６………………………ハンダ（接合材）
２８………………………………ＩＣチップ（電子部品）
４１………………………………ハンダ（別の接合材）
1a, 20a, 30a, 40a ... Wiring boards 2, 22, 32 ... ………… Substrate bodies 3, 23, 33 …………… Front side 4, 24, 34 …………… Back side 5,25 ………………………… Cavity 6,26 ………………………… Cavity bottom (surface)
11 ……………………………… Epoxy adhesive (different bonding material)
12, 36 ……………………… Heat dissipation member 15 ……………………………… Light-emitting element (electronic component)
16, 46 ………………………… Solder (bonding material)
28 ……………………………… IC chip (electronic parts)
41 ……………………………… Solder (another bonding material)

Claims (3)

絶縁材からなり表面および裏面を有する基板本体と、
上記基板本体の表面と裏面との間を貫通し、且つかかる基板本体に接合された放熱部材と、
上記放熱部材の上に接合された電子部品と、を備え、
上記電子部品と放熱部材とを接合する接合材の融点またはキュア温度は、上記基板本体と放熱部材とを接合する別の接合材の融点またはキュア温度よりも高い、ことを特徴とする配線基板。 A substrate body made of an insulating material and having a front surface and a back surface;
A heat dissipating member that penetrates between the front and back surfaces of the substrate body and is joined to the substrate body;
An electronic component joined on the heat dissipation member,
A wiring board characterized in that a melting point or a curing temperature of a bonding material for bonding the electronic component and the heat dissipation member is higher than a melting point or a curing temperature of another bonding material for bonding the substrate body and the heat dissipation member. 前記電子部品と放熱部材とを接合する接合材の融点またはキュア温度は、前記基板本体と放熱部材とを接合する別の接合材の融点またはキュア温度よりも、５０℃以上高い、ことを特徴とする請求項１に記載の配線基板。   The melting point or cure temperature of the bonding material for bonding the electronic component and the heat dissipation member is 50 ° C. or more higher than the melting point or cure temperature of another bonding material for bonding the substrate body and the heat dissipation member. The wiring board according to claim 1. 放熱部材の上に電子部品を接合材を介して接合する第１工程と、
上記電子部品が接合された放熱部材を、絶縁材からなる基板本体の表面と裏面との間を貫通するように、配線基板に対し別の接合材で接合する第２工程と、を含み、
上記電子部品と放熱部材とを接合する接合材の融点またはキュア温度は、上記基板本体と放熱部材とを接合する接合材の融点またはキュア温度よりも高い、ことを特徴とする配線基板の製造方法。
A first step of joining an electronic component on a heat dissipation member via a joining material;
A second step of joining the heat dissipating member to which the electronic component is joined to the wiring board with another joining material so as to penetrate between the front surface and the back surface of the substrate body made of an insulating material,
A method for manufacturing a wiring board, wherein a melting point or a curing temperature of a bonding material for bonding the electronic component and the heat dissipation member is higher than a melting point or a curing temperature of the bonding material for bonding the substrate body and the heat dissipation member. .
JP2006029190A 2006-02-07 2006-02-07 Wired substrate, and method for manufacturing same Withdrawn JP2007214162A (en)

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