CN112271244A - Novel flip LED implementation structure and method - Google Patents
Novel flip LED implementation structure and method Download PDFInfo
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- CN112271244A CN112271244A CN202011282662.4A CN202011282662A CN112271244A CN 112271244 A CN112271244 A CN 112271244A CN 202011282662 A CN202011282662 A CN 202011282662A CN 112271244 A CN112271244 A CN 112271244A
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- 238000000034 method Methods 0.000 title claims abstract description 21
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims abstract description 44
- 229910000679 solder Inorganic materials 0.000 claims abstract description 29
- 239000004593 Epoxy Substances 0.000 claims abstract description 26
- 239000011248 coating agent Substances 0.000 claims abstract description 24
- 238000000576 coating method Methods 0.000 claims abstract description 24
- 238000005476 soldering Methods 0.000 claims abstract description 21
- 229920005989 resin Polymers 0.000 claims abstract description 14
- 239000011347 resin Substances 0.000 claims abstract description 14
- 239000003292 glue Substances 0.000 claims abstract description 11
- 239000000463 material Substances 0.000 claims abstract description 8
- 238000005530 etching Methods 0.000 claims abstract description 5
- 239000006071 cream Substances 0.000 claims abstract description 4
- 238000001746 injection moulding Methods 0.000 claims description 6
- 238000007747 plating Methods 0.000 claims description 6
- 238000002955 isolation Methods 0.000 claims description 5
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 125000006850 spacer group Chemical group 0.000 claims description 2
- 238000012858 packaging process Methods 0.000 abstract description 5
- 230000001788 irregular Effects 0.000 abstract description 4
- 239000000155 melt Substances 0.000 abstract description 2
- 239000000047 product Substances 0.000 description 8
- 239000010410 layer Substances 0.000 description 7
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- 238000004806 packaging method and process Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011143 downstream manufacturing Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 230000003116 impacting effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000010309 melting process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000011265 semifinished product Substances 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
Abstract
The invention discloses a novel inverted LED (light emitting diode) realizing structure and a method, which comprise an inverted LED chip, an inverted LED bracket and epoxy solder paste; the flip LED chip is bonded in the pad area of the flip LED bracket through epoxy solder paste; the P pole and the N pole of the flip LED chip are respectively coated with tin layers to form a P pole tin coating and an N pole tin coating; the P-pole tin-plated layer and the N-pole tin-plated layer are respectively and correspondingly adhered to the corresponding bonding pad groove pits of the inverted LED bracket; epoxy tin cream point scribble in the pad groove hole of flip-chip LED support, pad groove hole is provided with resin overflow slot all around, is provided with slope type spacing block between the pad groove hole, EMC glues the material and fills at the pad periphery of P utmost point, N utmost point, still fill on the flip-chip LED support and have support etching piece. The invention inhibits short circuit failure caused by irregular flow after solder paste melts during reflow soldering in the flip LED packaging process, and simultaneously solves the short circuit risk possibly caused by reflow soldering of the solder paste due to secondary reflow soldering of the terminal.
Description
Technical Field
The invention relates to the technical field of LED packaging, in particular to a novel inverted LED implementation structure and a method.
Background
In recent years, with the rapid growth of the lighting industry and the display industry, the market demand for the LED is also increasing. With continuous technical breakthrough in the industry, the requirements of end customers on the LED are higher and higher, and especially the requirements on package power, lighting effect and reliability are continuously improved; in this context, flip-chip LED products are continually expanding in size and impacting the medium and high end market.
In the existing flip-chip LED packaging technology, the biggest problems are: in the packaging process, the P electrode and the N electrode of the flip chip are on the same plane; after flip chip die bonding, solder for welding is subjected to reflow soldering, and a P electrode and an N electrode of a chip are easily short-circuited in a solder paste melting process, so that product loss failure is caused. Even if the product is normal in the packaging link, secondary board pasting operation is still performed in the terminal manufacturing process, reflow soldering needs to be performed again, and the original normal product may be short-circuited and failed due to reflow soldering.
Under the background, the technical difficulty of solving the failure caused by short circuit in the packaging link and the terminal using process of the flip-chip technology becomes the urgent need of the industry.
In summary, the invention designs a novel flip-chip LED implementation structure and method.
Disclosure of Invention
Aiming at the defects in the prior art, the invention aims to provide a novel flip LED implementation structure and method, which can inhibit short circuit failure caused by irregular flow of molten solder paste during reflow soldering in a flip LED packaging process and solve the short circuit risk possibly caused by reflow soldering of the solder paste due to secondary reflow soldering of a terminal.
In order to achieve the purpose, the invention is realized by the following technical scheme: a novel flip LED realization structure comprises a flip LED chip, a flip LED bracket and epoxy solder paste; the flip LED chip is bonded in the pad area of the flip LED bracket through epoxy solder paste; the P pole and the N pole of the flip LED chip are respectively coated with tin layers to form a P pole tin coating and an N pole tin coating; the P-pole tin-plated layer and the N-pole tin-plated layer are respectively and correspondingly adhered to the corresponding bonding pad groove pits of the inverted LED bracket; epoxy tin cream point scribble in the pad groove hole of flip-chip LED support, pad groove hole is provided with resin overflow slot all around, is provided with slope type spacing block between the pad groove hole, EMC glues the material and fills at the pad periphery of P utmost point, N utmost point, still fill on the flip-chip LED support and have support etching piece.
Preferably, the solder paste is a solder paste with a resin component.
Preferably, the height of the slope-type spacer block is higher than that of the P pole tin coating and the N pole tin coating.
A novel flip LED implementation method comprises the following steps:
(1) firstly, the tin plating process is adopted to finish the tin plating of the electrode of the flip chip; when the inverted support is subjected to injection molding, EMC glue is filled around a pad area of the support at the periphery of a P pole pad and an N pole pad and is higher than the surface of the pads; the middle position of the two bonding pads is provided with a raised slope-shaped isolation block which is formed by injection molding of the rubber material and is higher than other positions; in addition, a circle of completely closed resin overflow groove is formed in the periphery of the inner sides of the P pole bonding pad and the N pole bonding pad in a stamping mode;
(2) in the die bonding process, firstly, point-coating epoxy tin paste in a pad groove pit of the flip LED bracket; then, the inverted LED chip and the electrode with the tin coating are inverted and covered on a pad groove pit of the inverted LED bracket to be matched and fixed;
(3) enabling the support after die bonding to pass through reflow soldering equipment, and fusing a flip chip tin coating with the pad groove pit and epoxy tin paste which is point-coated in the pad groove pit of the flip LED support; forming a conductive loop between the chip and the bracket through reflow soldering and solidification;
(4) and finally filling the fluorescent glue into the bracket bowl.
The invention has the beneficial effects that:
1. the short-circuit failure risk of the flip LED product in the packaging process is thoroughly solved; the yield of products is improved, and invisible electrical abnormity is avoided; the existing flip-chip products mainly rely on a test means to screen defective products, so that misjudgment risks exist; the scheme for cutting off the short circuit path can thoroughly avoid the hidden risk;
2. meanwhile, the scheme also solves the short circuit risk of the downstream processing procedure of the industry; when the terminal is used, the terminal needs to be welded again through reflow soldering; the structure can avoid P, N extremely short circuit caused by irregular flow of secondary solder paste melting.
Drawings
The invention is described in detail below with reference to the drawings and the detailed description;
FIG. 1 is a front view of a flip chip of the present invention;
FIG. 2 is a side view of a flip chip of the present invention;
FIG. 3 is a front view of the stent of the present invention
FIG. 4 is a side view of the bracket of the present invention;
FIG. 5 is an enlarged view of portion A of FIG. 4;
fig. 6 is a structural sectional view of the present invention.
Detailed Description
In order to make the technical means, the creation characteristics, the achievement purposes and the effects of the invention easy to understand, the invention is further described with the specific embodiments.
Referring to fig. 1 to 6, the following technical solutions are adopted in the present embodiment: a novel flip LED realization structure comprises a flip LED chip, a flip LED bracket and epoxy solder paste; the flip LED chip is bonded in the pad area of the flip LED bracket through epoxy solder paste; the P pole 1 and the N pole 2 of the flip LED chip are respectively coated with tin layers to form a P pole tin coating 3 and an N pole tin coating 4; the P-pole tin-plated layer 3 and the N-pole tin-plated layer 4 are respectively and correspondingly pasted in the corresponding bonding pad groove pits 5 of the flip LED bracket; epoxy tin cream point scribble in the pad groove hole 5 of flip-chip LED support, pad groove hole 5 is provided with resin overflow slot 6 all around, is provided with slope type spacing block 7 between the pad groove hole 5, EMC glues the material 8 and fills at the P utmost point 1, N utmost point 2 pad periphery, still fill on the flip-chip LED support and have support etching piece 9.
The flip chip of the present embodiment is provided with a conductive electrode, a P pole 1 and an N pole 2; coating a layer of solder paste of 15um on a P pole 1 and an N pole 2 of a chip respectively to form a P pole tin coating 3 and an N pole tin coating 4; the flip-chip LED support is provided with a pad groove pit 5, a resin overflow groove 6 and a slope type isolation block 7, the rest positions are the same as those of an EMC support on the market, and the EMC support is filled with EMC glue materials 8 and a support etching sheet 9 respectively. The solder paste is epoxy solder paste.
A novel flip LED implementation method comprises the following steps:
(1) firstly, the tin plating process is adopted to finish the tin plating of the electrode of the flip chip; when the inverted support is subjected to injection molding, EMC glue is filled around a pad area of the support at the periphery of a P pole pad and an N pole pad and is higher than the surface of the pads; the middle position of the two bonding pads is provided with a raised slope-shaped isolation block which is formed by injection molding of the rubber material and is higher than other positions; in addition, a circle of completely closed resin overflow groove is formed in the periphery of the inner sides of the P pole bonding pad and the N pole bonding pad in a stamping mode;
(2) in the die bonding process, firstly, point-coating epoxy tin paste in a pad groove pit of the flip LED bracket; then, the inverted LED chip and the electrode with the tin coating are inverted and covered on a pad groove pit of the inverted LED bracket to be matched and fixed;
(3) enabling the support after die bonding to pass through reflow soldering equipment, and fusing a flip chip tin coating with the pad groove pit and epoxy tin paste which is point-coated in the pad groove pit of the flip LED support; forming a conductive loop between the chip and the bracket through reflow soldering and solidification;
(4) and finally filling the fluorescent glue 11 into the bracket bowl.
Coating epoxy tin paste in a groove pit 5 of the flip LED support in a spot coating mode; the flip chip is inversely covered in the flip LED bracket, so that a P pole 1 and an N pole 2 of the flip chip are just matched and fixed with the pad groove pit; after the step is finished, welding the semi-finished product through reflow soldering equipment; in the process, the epoxy component in the solder paste is heated and cured, the epoxy component in the solder paste is melted after reaching a melting point at low temperature, the epoxy component diffuses and flows outwards and overflows into a resin overflow groove 6 on the periphery of a bonding pad of the flip-chip bracket, then the tin component is melted after reaching the melting point in a high-temperature area, the tin component flows and fills the whole area of a bonding pad groove pit 5, and the epoxy component is hardened in a low-temperature area after passing through the tail end of reflow. In the process, the resin overflow groove is filled with the resin in the epoxy tin paste preferentially to form an outer ring protective layer, and when the tin component is melted, the tin is locked in the groove pit 5 of the bracket bonding pad and cannot overflow; meanwhile, the slope-type isolation block 7 in the middle of the bonding pad of the flip support P, N effectively prevents solder paste from flowing to be communicated with the P pole 1 and the N pole 2 of the chip to cause short circuit; in the process of secondary reflow soldering operation of a terminal customer, the one-step forming characteristic of the epoxy resin and the pad resin overflow groove 6 enable the solder paste to be locked in the pad groove pit 5, so that the solder paste cannot overflow to avoid the communication of the P pole 1 and the N pole 2 of the chip, and the short circuit failure caused when the terminal is used is effectively avoided. After the chip 10 is soldered, the remaining process flow is the same as that of a conventional LED.
The embodiment inhibits short circuit failure caused by irregular flow after solder paste melts during reflow soldering of the flip-chip LED packaging process, and simultaneously solves the short circuit risk possibly caused by reflow soldering of the solder paste due to secondary reflow soldering of the terminal.
The foregoing shows and describes the general principles and broad features of the present invention and advantages thereof. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, which are described in the specification and illustrated only to illustrate the principle of the present invention, but that various changes and modifications may be made therein without departing from the spirit and scope of the present invention, which fall within the scope of the invention as claimed. The scope of the invention is defined by the appended claims and equivalents thereof.
Claims (4)
1. A novel flip LED implementation structure is characterized by comprising a flip LED chip, a flip LED bracket and epoxy solder paste; the flip LED chip is bonded in the pad area of the flip LED bracket through epoxy solder paste; the P pole (1) and the N pole (2) of the flip LED chip are respectively coated with tin layers to form a P pole tin coating (3) and an N pole tin coating (4); the P-pole tin-plated layer (3) and the N-pole tin-plated layer (4) are respectively and correspondingly adhered to the corresponding bonding pad groove pits (5) of the flip LED bracket; epoxy tin cream point scribble in flip-chip LED support's pad groove hole (5), pad groove hole (5) are provided with resin overflow slot (6) all around, are provided with slope type spacing block (7) between pad groove hole (5), EMC glues material (8) and fills at the pad periphery of P utmost point (1), N utmost point (2), still fill on the flip-chip LED support and have support etching piece (9).
2. The novel flip-chip LED implementation structure of claim 1, wherein said epoxy solder paste is a solder paste with a resin component.
3. The structure of claim 1, wherein the height of the slope-shaped spacer (7) is higher than that of the P-pole tin-plated layer (3) and the N-pole tin-plated layer (4).
4. A novel flip LED implementation method is characterized by comprising the following steps:
(1) firstly, the tin plating process is adopted to finish the tin plating of the electrode of the flip chip; when the inverted support is subjected to injection molding, EMC glue is filled around a pad area of the support at the periphery of a P pole pad and an N pole pad and is higher than the surface of the pads; the middle position of the two bonding pads is provided with a raised slope-shaped isolation block which is formed by injection molding of the rubber material and is higher than other positions; in addition, a circle of completely closed resin overflow groove is formed in the periphery of the inner sides of the P pole bonding pad and the N pole bonding pad in a stamping mode;
(2) in the die bonding process, firstly, point-coating epoxy tin paste in a pad groove pit of the flip LED bracket; then, the inverted LED chip and the electrode with the tin coating are inverted and covered on a pad groove pit of the inverted LED bracket to be matched and fixed;
(3) enabling the support after die bonding to pass through reflow soldering equipment, and fusing a flip chip tin coating with the pad groove pit and epoxy tin paste which is point-coated in the pad groove pit of the flip LED support; forming a conductive loop between the chip and the bracket through reflow soldering and solidification;
(4) and finally filling the fluorescent glue into the bracket bowl.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011282662.4A CN112271244A (en) | 2020-11-13 | 2020-11-13 | Novel flip LED implementation structure and method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202011282662.4A CN112271244A (en) | 2020-11-13 | 2020-11-13 | Novel flip LED implementation structure and method |
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| Publication Number | Publication Date |
|---|---|
| CN112271244A true CN112271244A (en) | 2021-01-26 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202011282662.4A Pending CN112271244A (en) | 2020-11-13 | 2020-11-13 | Novel flip LED implementation structure and method |
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| Country | Link |
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| CN (1) | CN112271244A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113161465A (en) * | 2021-05-11 | 2021-07-23 | 安徽芯瑞达科技股份有限公司 | Manufacturing method of LED Chip packaging device based on Flip Chip |
| CN114203559A (en) * | 2021-11-04 | 2022-03-18 | 江苏普诺威电子股份有限公司 | Packaging process for embedding flip chip in packaging carrier plate |
-
2020
- 2020-11-13 CN CN202011282662.4A patent/CN112271244A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113161465A (en) * | 2021-05-11 | 2021-07-23 | 安徽芯瑞达科技股份有限公司 | Manufacturing method of LED Chip packaging device based on Flip Chip |
| CN114203559A (en) * | 2021-11-04 | 2022-03-18 | 江苏普诺威电子股份有限公司 | Packaging process for embedding flip chip in packaging carrier plate |
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