CN108010841B - A kind of manufacturing method of diode and thus obtained diode - Google Patents
A kind of manufacturing method of diode and thus obtained diode Download PDFInfo
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- CN108010841B CN108010841B CN201711248776.5A CN201711248776A CN108010841B CN 108010841 B CN108010841 B CN 108010841B CN 201711248776 A CN201711248776 A CN 201711248776A CN 108010841 B CN108010841 B CN 108010841B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 30
- 239000013078 crystal Substances 0.000 claims abstract description 120
- 238000003466 welding Methods 0.000 claims abstract description 116
- 239000002245 particle Substances 0.000 claims abstract description 57
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims abstract description 37
- 238000005554 pickling Methods 0.000 claims abstract description 31
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims abstract description 26
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims abstract description 24
- 239000002253 acid Substances 0.000 claims abstract description 22
- 238000004140 cleaning Methods 0.000 claims abstract description 17
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 13
- 238000002360 preparation method Methods 0.000 claims abstract description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 25
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 18
- 238000005336 cracking Methods 0.000 claims description 18
- 229910052710 silicon Inorganic materials 0.000 claims description 18
- 239000010703 silicon Substances 0.000 claims description 18
- 239000008367 deionised water Substances 0.000 claims description 17
- 229910021641 deionized water Inorganic materials 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 12
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 12
- 238000010438 heat treatment Methods 0.000 claims description 9
- 239000003292 glue Substances 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 7
- 238000003756 stirring Methods 0.000 claims description 7
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 claims description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 6
- 229910052757 nitrogen Inorganic materials 0.000 claims description 6
- 238000005476 soldering Methods 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 3
- 239000000908 ammonium hydroxide Substances 0.000 claims description 3
- 238000001035 drying Methods 0.000 claims description 3
- 238000000465 moulding Methods 0.000 claims description 3
- 239000000843 powder Substances 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 3
- 238000002604 ultrasonography Methods 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 101100008047 Caenorhabditis elegans cut-3 gene Proteins 0.000 claims 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 claims 1
- 229910052731 fluorine Inorganic materials 0.000 claims 1
- 239000011737 fluorine Substances 0.000 claims 1
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000005538 encapsulation Methods 0.000 abstract 1
- 239000000047 product Substances 0.000 description 14
- 229960000583 acetic acid Drugs 0.000 description 8
- 230000002860 competitive effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000001816 cooling Methods 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 239000003822 epoxy resin Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000004806 packaging method and process Methods 0.000 description 2
- 239000004033 plastic Substances 0.000 description 2
- 229920000647 polyepoxide Polymers 0.000 description 2
- 238000012797 qualification Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000027418 Wounds and injury Diseases 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000012467 final product Substances 0.000 description 1
- 238000009472 formulation Methods 0.000 description 1
- 208000014674 injury Diseases 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000006396 nitration reaction Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
Abstract
The invention discloses a kind of manufacturing method of diode and thus obtained diodes, the manufacturing method of the present invention includes diode crystal particle preparation, loads, welding, cleaning encapsulation step, the present invention utilizes crystal grain and weld tabs different thermal expansion coefficient and deformation at high temperature, without in advance to positive crystal grain before welding, crystal grain is drawn just automatically after welding can be realized, stomatal size greatly reduces, welding quality is improved, via hydrofluoric acid: acetic acid: sulfuric acid: the crystal grain electrical property yield after mixed acid pickling made from volume ratio=8.8:13:5.6:9.2 of nitric acid is high.
Description
Technical field
The invention belongs to the manufacturing methods and thus obtained two pole of high voltage silicon rectifier stack field more particularly to a kind of diode
Pipe.
Background technique
The conventional method of current grain manufacture is using the technique cut again after the welding accumulation of full wafer silicon wafer, and welding fixture is stupid
It repeats miscellaneous, and as the deformation caused by diffusion technique before of full wafer silicon wafer, is unevenly distributed after large stretch of weld tabs high temperature melting,
Leading to cutting process, breakage rate is high, and the junior unit after incision also wants secondary filling with welding lead, and secondary welding causes crystal grain two
Secondary damage, welding times more poly-injury are more serious.Not only process is complicated for technique as above, and equipment is numerous and jumbled, and at high cost, yield rate
Low (80% or so).
The production of general crystal grain, is easy to cause the polarity of crystal grain to invert, and polarity is inconsistent, thus need before welding by
The polarity of crystal grain is selected and is verified, this is greatly bothered to subsequent correct welded bands.
Conventional crystal particle welding, nobody carry out in detail and conscientiously the dimension scale relationship between weld tabs and crystal grain
Research, therefore always could not making contributions to direct problem for crystal particle welding.
And generallyd use in industry silicon stack welding temperature be greater than 350 DEG C, less than 350 DEG C when, it may appear that
The case where failure welding, is just able to achieve good welding when temperature reaches 350 DEG C~380 DEG C, but high temperature leads to the silicon welded out
Heap weld blowhole is big, and stomatal size is generally 8~20%, and yields is low (less than 90%), and waste of energy.
Pickling is to the diode after welding, and the committed step and technique carried out before upper white glue is fallen with pickling
Pn-junction cut surface caused by when crystal grain is cut is crude, the surface corrosion hole for avoiding pickling from may cause, simple and effective to remove copper removal, lead
Etc. being not easy irrigation, electrical yield can be improved, promote acid cleaning process quality.
Many diodes often work in 60 DEG C or more of environment, and the junction temperature of chip can usually reach 125 DEG C or more,
Therefore, the high temperature reverse bias ability for improving product is significantly.With conventionally produced, their high temperature reverse bias qualification rate
It can only achieve 60% or so, to make product more competitive superiority, the quality and the reliability under hot environment of product are mentioned
Height, the technology for improving the high temperature reverse bias screening qualification rate of product are never broken through.
The conventional formulation of current nitration mixture, it is crude to there is portioned product pickling rear surface, and will cause the table of significant proportion
Face etch pit.
Summary of the invention
In view of defects in the prior art, the present invention provides a kind of manufacturing method of diode and thus obtained two
Pole pipe, the diode reverse withstand voltage produced by production method of the present invention is high, and forward voltage is small, and the present invention only needs one-time pad to weld
Connecing can be by crystal grain by welding automatic alignment, and weld blowhole area is small, and yields is high.Acid cleaning process of the invention can
Utmostly clean cut surface is crude, effectively prevents the surface corrosion hole that pickling may cause, and the electrical property for improving product is good
Rate.
The technical solution of the technical problem to be solved in the present invention is:
A kind of manufacturing method of diode, includes the following steps:
Step 1: the preparation of diode crystal particle
1.1, precut in the thickness direction of silicon wafer, form the rectangular diode crystal particle of endless slitting-up, silicon wafer
Depth of cut be silicon wafer overall thickness 3/5~4/5.
1.2, it will be placed on up on crystal grain cracking paper in the silicon wafer N that thickness direction is precut, cutting knife direction court
On, it is light to press, so that the diode crystal particle of endless slitting-up cracks completely.
Step 2: filling
2.1, lower lead is packed into lower welding boat.
2.2, weld tabs is put into weld tabs sucker, and moves into welding boat, weld tabs is fallen on lead；Diode crystal particle is put into weldering
Boat is connect, is fallen on weld tabs, weld tabs is placed on diode crystal particle, scaling powder is uniformly sprayed on welding boat surface, finally closes load
There is the upper welding boat of upper lead.
Diode crystal particle can be put into any angle, the angle being put into without deliberately adjusting crystal grain, when weld tabs is put into also without
Position need to deliberately be adjusted.
2.3, stringent dimension scale relationship is followed between weld tabs size and rectangular grain size, weld tabs is excessive, rectangular crystalline substance
Just without farad, weld tabs is too small, rectangular intercrystalline poor contact for grain, 47,55,90, the rectangular crystal grain of 134mil size respectively corresponds
Weld tabs having a size of being: Φ 1.30mm, thickness 0.05mm；Φ 1.70mm, thickness 0.05mm；Φ 2.80mm, thickness 0.05mm；Φ
3.56mm, thickness 0.10mm.
Step 3: welding
The welding boat filled, is put into soldering furnace and is welded, and forms welding diode part, welding temperature and time are as follows:
At normal temperature, welding temperature is heated to 310~320 DEG C with the heating slope of 16.5 ± 0.5 DEG C/min, welding temperature
It holds time: 5~10min；70 ± 5 DEG C are cooled to the descending temperature ramp back down of 7.0 ± 0.5 DEG C/min again, is finally down to room temperature naturally.
Step 4: cleaning
Include the following steps:
4.1: with acid is mixed at normal temperature to the pickling of welding diode part 150 seconds after welding, then being rushed with deionized water
Wash welding diode part 60 seconds.
4.2: the phosphoric acid for being 85 ± 1% by concentration: the hydrogen peroxide of concentration 35 ± 1%: pure water is mixed for 1:1:3 according to volume ratio
8~10 minutes obtained pickling solutions of stirring are closed, pickling solution obtained are heated to 60 DEG C, welding diode part is clear in this pickling solution
It washes 60 seconds, is then rinsed welding diode part 60 seconds with deionized water.
4.3: according to volume ratio be 9 by the ammonium hydroxide of concentration 25%~28%, the hydrogen peroxide that concentration is 35 ± 1% and pure water:
1:9 ratio is uniformly mixed obtained pickling solution, is cleaned welding diode part 60 seconds using this pickling solution of room temperature, then spend from
Sub- water rinses welding diode part 60 seconds.
4.4: welding diode part after cleaning was deionized water ultrasound or megasonic cleaning 3 minutes, then with 50~60
DEG C deionized water rinse welding diode part 60 seconds.
4.5: welding diode part is put into isopropanol and impregnates 5~8 minutes.
4.6: welding diode part is dried one hour at a temperature of 170~210 DEG C.
Step 5: to white glue on the welding diode part after cleaning, drying, then being solidified, diode package molding.
Preferably, in the step 3 weld tabs component are as follows: lead: 92.5%, tin: 5%, silver: 2.5%.
Preferably, crystal grain passes to nitrogen or hydrogen shield, welding temperature in welding stove heating welding process in the step 3
Degree is 315 DEG C, and it is 7 minutes that welding temperature, which is held time,.
Preferably, the mixed acid in the step 4 is made of hydrofluoric acid, acetic acid, sulfuric acid and nitric acid, the hydrofluoric acid: vinegar
Acid: sulfuric acid: volume ratio=8.8:13:5.6:9.2 of nitric acid, the concentration of the hydrofluoric acid are 48.5~49.5%, acetic acid it is dense
Degree is 99.6~99.9%, and the concentration of sulfuric acid is 97.6~98.6%, and the concentration of nitric acid is 67.5~68.5%.
Preferably, the mixed acid following steps are made:
At 25 ± 5 DEG C of temperature, raw material is added in the following order
Step 1: the acetic acid that concentration is 99.6~99.9% being added in a reservoir, it is 49 ± 0.05% that concentration, which is then added,
Hydrofluoric acid stirs 10~15 minutes.
Step 2: adding the nitric acid that concentration is 68 ± 0.5%, stir 15 minutes.
Step 3: being eventually adding the sulfuric acid that concentration is 98.1 ± 0.5%, stirred 2~3 hours after mixing.
Preferably, the step 4.2, in 4.3, the temperature using deionized water is 50~60 degree.
Preferably, the preparation of step 1 diode crystal particle further includes following steps:
The first, transparent counnter attack cover is placed in below crystal grain cracking paper, sucker opening side is buckled in the two of crystal grain cracking paper
On pole pipe crystal grain, then by transparent counnter attack cover, crystal grain cracking paper, rectangular crystal grain, sucker integral level direction invert, counnter attack cover and
Grain sucker suitably firmly clamps, and prevents the crystal grain in reversion from relatively moving, so that diode crystal particle moves entirely into sucker；It inhales
Disk is followed successively by diode crystal particle, crystal grain cracking paper and transparent counnter attack cover under, on sucker.
The second, transparent counnter attack cover is picked up, removes transparent counnter attack cover and crystal grain cracking paper, then detain again above rectangular crystal grain
Upper transparent counnter attack cover, the spacing between transparent counnter attack cover and grain sucker are less than diode crystal particle side length, overturning when preventing from shaking disk.
Third shakes sucker, and sucker starts to adsorb diode crystal particle, it is ensured that each sucker of sucker all adsorbs diode crystalline substance
Grain, and in the sucker of sucker diode crystal particle direction unanimously without reversion.
4th, vacuum switch is opened, the diode crystal particle in sucker hole is sucked, extra a small amount of rectangular crystal grain is poured out it and used.
The invention also discloses more than one steps production diode, the diode include both ends lead and be located at two
The diode crystal particle between lead is held, the diode crystal particle is electrically connected by weld tabs welding with both ends lead, after welding
The periphery of diode crystal particle be equipped with protection white glue, the white glue periphery be equipped with plastic packaging epoxy resin layer, the diode crystal particle according to
Claim 1-7 is any to be manufactured.
Excellent effect of the invention:
1, polarity is consistent in crystal grain production process, therefore before welding without being selected and being tested the polarity of crystal grain
Card, improves production efficiency, ensure that product quality.
2, the present invention is using crystal grain and weld tabs different thermal expansion coefficient and deformation at high temperature, without right in advance before welding
Positive crystal grain, according to lead-weld tabs-crystal grain-weld tabs-lead sequence filling, it can be achieved that crystal grain is drawn just automatically after welding.This
Invention realizes under 310 DEG C~320 DEG C of lower temperature, and stomatal size greatly reduces (stomatal size is less than 10%), non-defective unit
Rate 95~100% effectively avoids the not intensive secured problem of welding, and has saved the energy.
3, it is used for the acid pickling step of diode production technique using mixed acid of the invention, high-performance pickling may be implemented,
By improving the electrical yield of pn, the reliability under product high temperature is improved, diode high temperature reverse bias can be especially effectively improved
With two reliability indexs of high temperature storage, product more competitive superiority.
Specific embodiment
Illustrate technology contents of the invention below by way of particular specific embodiment, those skilled in the art can be by this theory
The content that bright book discloses understands further advantage and effect of the invention easily.The present invention can also pass through other different specific realities
It applies example to be implemented or applied, the various details in this specification also can be based on different viewpoint and application, without prejudice to this hair
Various modifications and change are carried out under bright spirit.
A kind of manufacturing method of diode, includes the following steps:
Step 1: the preparation of diode crystal particle
1.1, precut in the thickness direction of silicon wafer, form the rectangular diode crystal particle of endless slitting-up, silicon wafer
Depth of cut be silicon wafer overall thickness 3/5~4/5.
1.2, it will be placed on up on crystal grain cracking paper in the silicon wafer N that thickness direction is precut, cutting knife direction court
On, it is light to press, so that the diode crystal particle of endless slitting-up cracks completely.
Step 2: filling
2.1, lower lead is packed into lower welding boat.
2.2, weld tabs is put into weld tabs sucker, and moves into welding boat, weld tabs is fallen on lead；Diode crystal particle is put into weldering
Boat is connect, is fallen on weld tabs, weld tabs is placed on diode crystal particle, scaling powder is uniformly sprayed on welding boat surface, finally closes load
There is the upper welding boat of upper lead.
Diode crystal particle can be put into any angle, the angle being put into without deliberately adjusting crystal grain, when weld tabs is put into also without
Position need to deliberately be adjusted.
2.3, stringent dimension scale relationship is followed between weld tabs size and rectangular grain size, weld tabs is excessive, rectangular crystalline substance
Just without farad, weld tabs is too small, rectangular intercrystalline poor contact for grain, 47,55,90, the rectangular crystal grain of 134mil size respectively corresponds
Weld tabs having a size of being: Φ 1.30mm, thickness 0.05mm；Φ 1.70mm, thickness 0.05mm；Φ 2.80mm, thickness 0.05mm；Φ
3.56mm, thickness 0.10mm.
Step 3: welding
The welding boat filled, is put into soldering furnace and is welded, and forms welding diode part, welding temperature and time are as follows:
At normal temperature, welding temperature is heated to 310~320 DEG C with the heating slope of 16.5 ± 0.5 DEG C/min, welding temperature
It holds time: 5~10min；70 ± 5 DEG C are cooled to the descending temperature ramp back down of 7.0 ± 0.5 DEG C/min again, is finally down to room temperature naturally.
A kind of preferred embodiment is that crystal grain passes to nitrogen or hydrogen in welding stove heating welding process in the step 4
Gas shielded, welding temperature are the structure proportion of soldering furnace heating zone buffer area and cooling area, are the key that realize low-temperature welding.It is excellent
Choosing, optional soldering furnace 11m long, heating zone length 3.4m, buffer length 1m, remaining is cooling area.Also, the soldering furnace
Both ends are equipped with corresponding nitrogen air curtain up and down, and nitrogen flow is all 1.2 cubic metres/h, and heating zone nitrogen flow is 4 cubic metres/h.
At present in semiconductor manufacturing industry, the overwhelming majority completes semiconductor material using tunnel welding furnace and lead welds
Work is connect, the rate temperature change of its welding temperature range and temperature-fall period, precision can be to subsequent finished products in the welding process
Quality causes the influence that can not be made up.The control of general control welding temperature is at 350~380 DEG C in prior art, rate of temperature fall control
System is inaccurate or blow-on initial stage rate of temperature fall is there are some out-of-control phenomenons, will have a direct impact on final product quality.In addition, high temperature is led
Cause the silicon stack weld blowhole welded out big, for stomatal size generally 8~20%, yields is low (less than 90%), and wastes energy
Source, if prior art temperature is lower than 350 DEG C, it may appear that failure welding.
Using temperature control curve of the present invention as above, welding, gas can be realized under 310 DEG C~320 DEG C of lower temperature
Hole area greatly reduces (stomatal size is less than 10%), yields 95~100%, and welding is effectively avoided not ask firmly intensively
Topic, and saved the energy.Preferably, welding temperature is 315 DEG C, and it is 7 minutes that welding temperature, which is held time,.
Step 4: cleaning
Include the following steps:
4.1: with acid is mixed at normal temperature to the pickling of welding diode part 150 seconds after welding, then being rushed with deionized water
Wash welding diode part 60 seconds.
4.2: the phosphoric acid for being 85 ± 1% by concentration: the hydrogen peroxide of concentration 35 ± 1%: pure water is mixed for 1:1:3 according to volume ratio
8~10 minutes obtained pickling solutions of stirring are closed, pickling solution obtained are heated to 60 DEG C, welding diode part is clear in this pickling solution
It washes 60 seconds, is then rinsed welding diode part 60 seconds with deionized water.It preferably, the use of the temperature of deionized water is 50~60
Degree.
4.3: according to volume ratio be 9 by the ammonium hydroxide of concentration 25%~28%, the hydrogen peroxide that concentration is 35 ± 1% and pure water:
1:9 ratio is uniformly mixed obtained pickling solution, is cleaned welding diode part 60 seconds using this pickling solution of room temperature, then spend from
Sub- water rinses welding diode part 60 seconds.It preferably, the use of the temperature of deionized water is 50~60 degree.
4.4: welding diode part after cleaning was deionized water ultrasound or megasonic cleaning 3 minutes, then with 50~60
DEG C deionized water rinse welding diode part 60 seconds.
4.5: welding diode part is put into isopropanol and impregnates 5~8 minutes.
4.6: welding diode part is dried 1 hour at a temperature of 170~210 DEG C.
Clean standard is that contaminant particles do not influence diode electrical property.
Welding diode part by above-mentioned pickling, pn-junction periphery is bright and clean, there is texture, and the finger of electrical yield can be improved
Mark, in addition, being done using mixed acid of the present invention and the diode cleaning method based on the mixed acid using 77 diodes
High temperature reverse bias experiment, actual measurement use the 77 of mixed acid of the present invention and the diode cleaning method production based on the mixed acid
, there is not the case where failure in branch diode.
Step 5: to white glue on the welding diode part after cleaning, drying, then being solidified, diode package molding.
Mixed acid in the step 5 is made of hydrofluoric acid, acetic acid, sulfuric acid and nitric acid, the hydrofluoric acid: acetic acid: sulfuric acid:
Volume ratio=8.8:13:5.6:9.2 of nitric acid, the concentration of the hydrofluoric acid are 48.5~49.5%, and the concentration of acetic acid is 99.6
~99.9%, the concentration of sulfuric acid is 97.6~98.6%, and the concentration of nitric acid is 67.5~68.5%.
It is above-mentioned to have the effect of excellent for carrying out the mixing acid of pickling to welding diode part, it is mixed using of the invention
The acid pickling step that acid is used for diode production technique is closed, high-performance pickling may be implemented, by improving the electrical yield of pn, in turn
Product quality is improved, labour cost is saved.Meanwhile the welding diode part through mixing sour pickling, it can be improved welding diode
Reliability under part product high temperature can especially be effectively improved two reliabilities of diode high temperature reverse bias and high temperature storage and refer to
Mark, product more competitive superiority.
The proportion and making step of above-mentioned mixing acid is explained in detail below.
At 25 ± 5 DEG C of temperature, raw material is added in the following order
Step 1: the acetic acid that concentration is 99.6~99.9% being added in a reservoir, it is 49 ± 0.05% that concentration, which is then added,
Hydrofluoric acid stirs 10~15 minutes.
Step 2: adding the nitric acid that concentration is 68 ± 0.5%, stir 15 minutes.
Step 3: being eventually adding the sulfuric acid that concentration is 98.1 ± 0.5%, stirred 2~3 hours after mixing.
In conventional diode crystal particle manufacturing process, it is one that diode crystal particle, which may mix, and the polarity of crystal grain is distinguished in inconvenience,
And then product quality may be influenced, production efficiency is reduced, therefore the invention also discloses the novelties of the preparation of diode crystal particle
The step of.In above-mentioned steps, the step of being the rough overview step, more details of the preparation to diode crystal particle, there are also following
Several steps, preferred several detailed steps are as follows:
Preferably, the preparation of step 1 diode crystal particle further includes following steps:
1, transparent counnter attack cover is placed in below crystal grain cracking paper, sucker opening side is buckled in the diode of crystal grain cracking paper
On crystal grain, then transparent counnter attack cover, crystal grain cracking paper, rectangular crystal grain, sucker integral level direction are inverted, counnter attack cover and crystal grain
Sucker suitably firmly clamps, and prevents the crystal grain in reversion from relatively moving, so that diode crystal particle moves entirely into sucker；Sucker exists
Under, diode crystal particle, crystal grain cracking paper and transparent counnter attack cover are followed successively by sucker,
2, transparent counnter attack cover is picked up, removes transparent counnter attack cover and crystal grain cracking paper, then buckle again above rectangular crystal grain
Transparent counnter attack cover, the spacing between transparent counnter attack cover and grain sucker are less than diode crystal particle side length, overturning when preventing from shaking disk,
3, sucker is shaken, sucker starts to adsorb diode crystal particle, it is ensured that each sucker of sucker all adsorbs diode crystal particle,
And diode crystal particle direction is unanimously without reversion in the sucker of sucker；
4, vacuum switch is opened, the diode crystal particle in sucker hole is sucked, extra a small amount of rectangular crystal grain is poured out it and used.
Step is improved using as above, it is ensured that the production polarity of crystal grain is consistent, reduces subsequent unnecessary trouble, makes
Crystal grain production is obtained to save human cost and improve accuracy.
The invention also discloses more than one steps production diode, the diode include both ends lead and be located at two
The diode crystal particle between lead is held, the diode crystal particle is electrically connected by weld tabs welding with both ends lead, after welding
The periphery of diode crystal particle be equipped with protection white glue, the white glue periphery be equipped with plastic packaging epoxy resin layer, the diode crystal particle according to
Claim 1-7 is any to be manufactured.
Although an embodiment of the present invention has been shown and described, it will be understood by those skilled in the art that: not
A variety of change, modification, replacement and modification can be carried out to these embodiments in the case where being detached from the principle of the present invention and objective, this
The range of invention is defined by the claims and their equivalents.
Claims (7)
1. a kind of manufacturing method of diode, it is characterised in that:
Include the following steps:
Step 1: the preparation of diode crystal particle
1.1, precut in the thickness direction of silicon wafer, the rectangular diode crystal particle of endless slitting-up is formed, silicon wafer is cut
Cut 3/5~4/5 that depth is silicon wafer overall thickness；
1.2, will thickness direction precut silicon wafer N be placed on up crystal grain cracking paper on, cutting knife direction upward, gently
Pressure, so that the diode crystal particle of endless slitting-up cracks completely；
Step 2: filling
2.1, lower lead is packed into lower welding boat,
2.2, weld tabs is put into weld tabs sucker, and moves into welding boat, weld tabs is fallen on lead；Diode crystal particle is put into welding
Boat is fallen on weld tabs, and weld tabs is placed on diode crystal particle, is uniformly sprayed scaling powder on welding boat surface, is finally closed and be loaded with
The upper welding boat of upper lead；
Diode crystal particle can be put into any angle, the angle being put into without deliberately adjusting crystal grain, without quarter when weld tabs is put into
Meaning adjustment position；
2.3, stringent dimension scale relationship is followed between weld tabs size and rectangular grain size, weld tabs is excessive, rectangular crystal grain without
Just, weld tabs is too small, rectangular intercrystalline poor contact for farad, 47,55,90, the corresponding weldering of rectangular crystal grain of 134mil size
Chip size is yes: Φ 1.30mm, thickness 0.05mm；Φ 1.70mm, thickness 0.05mm；Φ 2.80mm, thickness 0.05mm；Φ
3.56mm, thickness 0.10mm；
Step 3: welding
The welding boat filled, is put into soldering furnace and is welded, and forms welding diode part, welding temperature and time are as follows:
At normal temperature, welding temperature is heated to 310~320 DEG C with the heating slope of 16.5 ± 0.5 DEG C/min, welding temperature maintains
Time: 5~10min；70 ± 5 DEG C are cooled to the descending temperature ramp back down of 7.0 ± 0.5 DEG C/min again, is finally down to room temperature naturally,
Step 4: cleaning
Include the following steps:
4.1: with mixed acid at normal temperature to the pickling of welding diode part 150 seconds after welding, then rinsing two with deionized water
Pole pipe weldment 60 seconds；
4.2: the phosphoric acid for being 85 ± 1% by concentration: the hydrogen peroxide of concentration 35 ± 1%: pure water is that 1:1:3 mixing is stirred according to volume ratio
8~10 minutes obtained pickling solutions are mixed, pickling solution obtained are heated to 60 DEG C, welding diode part cleans 60 in this pickling solution
Second, then rinsed welding diode part 60 seconds with deionized water；
4.3: according to volume ratio being 9:1:9 ratio by the ammonium hydroxide of concentration 25%~28%, the hydrogen peroxide that concentration is 35 ± 1% and pure water
Example is uniformly mixed obtained pickling solution, cleans welding diode part 60 seconds using this pickling solution of room temperature, then uses deionized water
It rinses welding diode part 60 seconds；
4.4: welding diode part after cleaning was deionized water ultrasound or megasonic cleaning 3 minutes, then with 50~60 DEG C
Deionized water is rinsed welding diode part 60 seconds；
4.5: welding diode part is put into isopropanol and impregnates 5~8 minutes；
4.6: welding diode part is dried one hour at a temperature of 170~210 DEG C,
Step 5: to white glue on the welding diode part after cleaning, drying, then being solidified, diode package molding.
2. a kind of manufacturing method of diode according to claim 1, it is characterised in that:
The component of weld tabs in the step 3 are as follows:
Lead: 92.5%,
Tin: 5%,
Silver: 2.5%.
3. a kind of manufacturing method of diode according to claim 1, it is characterised in that:
Crystal grain passes to nitrogen or hydrogen shield in welding stove heating welding process in the step 3, and welding temperature is 315 DEG C,
It is 7 minutes that welding temperature, which is held time,.
4. a kind of manufacturing method of diode according to claim 1, it is characterised in that:
Mixed acid in the step 4 is made of hydrofluoric acid, acetic acid, sulfuric acid and nitric acid, the hydrofluoric acid: acetic acid: sulfuric acid: nitric acid
Volume ratio=8.8:13:5.6:9.2, the concentration of the hydrofluoric acid is 48.5~49.5%, the concentration of acetic acid is 99.6~
99.9%, the concentration of sulfuric acid is 97.6~98.6%, and the concentration of nitric acid is 67.5~68.5%.
5. according to claim 1 or a kind of manufacturing method of 4 any diodes, it is characterised in that:
The mixed acid following steps are made:
At 25 ± 5 DEG C of temperature, raw material is added in the following order
Step 1: the acetic acid that concentration is 99.6~99.9% being added in a reservoir, the hydrogen fluorine that concentration is 49 ± 0.05% is then added
Acid stirs 10~15 minutes,
Step 2: the nitric acid that concentration is 68 ± 0.5% is added, is stirred 15 minutes,
Step 3: being eventually adding the sulfuric acid that concentration is 98.1 ± 0.5%, stirred 2~3 hours after mixing.
6. a kind of manufacturing method of diode according to claim 1, it is characterised in that:
The step 4.2, in 4.3, the temperature using deionized water is 50~60 degree.
7. a kind of manufacturing method of diode according to claim 1, it is characterised in that:
The preparation of step 1 diode crystal particle further includes following steps:
7.1, transparent counnter attack cover is placed in below crystal grain cracking paper, the diode that sucker opening side is buckled in crystal grain cracking paper is brilliant
On grain, then transparent counnter attack cover, crystal grain cracking paper, rectangular crystal grain, sucker integral level direction are inverted, counnter attack cover and crystal grain are inhaled
Disk suitably firmly clamps, and prevents the crystal grain in reversion from relatively moving, so that diode crystal particle moves entirely into sucker；Sucker exists
Under, diode crystal particle, crystal grain cracking paper and transparent counnter attack cover are followed successively by sucker,
7.2, transparent counnter attack cover is picked up, removes transparent counnter attack cover and crystal grain cracking paper, then buckle again above rectangular crystal grain
Bright counnter attack cover, the spacing between transparent counnter attack cover and grain sucker are less than diode crystal particle side length, overturning when preventing from shaking disk,
7.3, sucker is shaken, sucker starts to adsorb diode crystal particle, it is ensured that each sucker of sucker all adsorbs diode crystal particle, and
And in the sucker of sucker diode crystal particle direction unanimously without reversion,
7.4, vacuum switch is opened, the diode crystal particle in sucker hole is sucked, extra a small amount of rectangular crystal grain is poured out it and used.
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| CN109830577B (en) * | 2019-01-18 | 2021-06-15 | 深圳市广盛浩科技有限公司 | Manufacturing method of high-quality light-emitting diode |
| CN110085541B (en) * | 2019-05-15 | 2021-11-02 | 强茂电子(无锡)有限公司 | Manufacturing method of shaft type diode |
| CN110085522A (en) * | 2019-05-15 | 2019-08-02 | 强茂电子(无锡)有限公司 | The production method of shaft type diode |
| CN112670350B (en) * | 2020-12-14 | 2022-10-25 | 山东融创电子科技有限公司 | Manufacturing method of high-stability open-junction plastic-packaged silicon rectifier diode |
| CN112750766B (en) * | 2020-12-14 | 2022-12-27 | 山东融创电子科技有限公司 | Preparation process of long-life diode |
| CN113319036A (en) * | 2021-04-20 | 2021-08-31 | 如皋市大昌电子有限公司 | Method for cleaning high-current high-voltage silicon stack |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101615586A (en) * | 2009-07-13 | 2009-12-30 | 强茂电子(无锡)有限公司 | The manufacture method of transient voltage suppression diode |
| CN104399702A (en) * | 2014-11-17 | 2015-03-11 | 如皋市易达电子有限责任公司 | Diode chip pickling process |
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2017
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101615586A (en) * | 2009-07-13 | 2009-12-30 | 强茂电子(无锡)有限公司 | The manufacture method of transient voltage suppression diode |
| CN104399702A (en) * | 2014-11-17 | 2015-03-11 | 如皋市易达电子有限责任公司 | Diode chip pickling process |
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