CN104795335A - Method for manufacturing high-reliability glass passivation high-voltage silicon stacks - Google Patents
Method for manufacturing high-reliability glass passivation high-voltage silicon stacks Download PDFInfo
- Publication number
- CN104795335A CN104795335A CN201510193603.2A CN201510193603A CN104795335A CN 104795335 A CN104795335 A CN 104795335A CN 201510193603 A CN201510193603 A CN 201510193603A CN 104795335 A CN104795335 A CN 104795335A
- Authority
- CN
- China
- Prior art keywords
- voltage silicon
- aid
- chip
- silicon stacks
- reliability
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 22
- 239000010703 silicon Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000011521 glass Substances 0.000 title claims abstract description 10
- 238000002161 passivation Methods 0.000 title claims abstract description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims abstract description 13
- 229910052721 tungsten Inorganic materials 0.000 claims abstract description 13
- 239000010937 tungsten Substances 0.000 claims abstract description 13
- 239000002253 acid Substances 0.000 claims abstract description 10
- 238000005245 sintering Methods 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000008367 deionised water Substances 0.000 claims abstract description 4
- 229910021641 deionized water Inorganic materials 0.000 claims abstract description 4
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 4
- 239000010439 graphite Substances 0.000 claims abstract description 4
- 238000003475 lamination Methods 0.000 claims abstract description 4
- 239000002002 slurry Substances 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 6
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 239000004020 conductor Substances 0.000 claims description 6
- 238000000465 moulding Methods 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- 239000000843 powder Substances 0.000 claims description 5
- 238000007493 shaping process Methods 0.000 claims description 5
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 3
- 229960000583 acetic acid Drugs 0.000 claims description 3
- 239000004411 aluminium Substances 0.000 claims description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 239000012362 glacial acetic acid Substances 0.000 claims description 3
- 238000002156 mixing Methods 0.000 claims description 3
- 229910017604 nitric acid Inorganic materials 0.000 claims description 3
- 229910000679 solder Inorganic materials 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 238000004806 packaging method and process Methods 0.000 abstract 2
- 238000007664 blowing Methods 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000004576 sand Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
- 238000011109 contamination Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 238000010410 dusting Methods 0.000 description 2
- 230000013011 mating Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Elimination Of Static Electricity (AREA)
- Glass Compositions (AREA)
Abstract
The invention discloses a method for manufacturing high-reliability glass passivation high-voltage silicon stacks. The method includes steps of a, forming wafers with specified dimensions from a plurality of pipe cores by means of sand blowing by the aid of tabletop forming machines; b, polarizing and processing the pipe cores and sintering the pipe cores by the aid of graphite dies in a lamination sintering mode to obtain chips; c, welding electrode leads with tungsten electrodes at two ends of each chip; d, corroding tabletops of the chips twice by the aid of mixed acid and thoroughly washing the chips by the aid of a large quantity of deionized water; e, coating passivation packaging glass slurry on the tabletops of the chips, forming the high-reliability glass passivation high-voltage silicon stacks at high temperatures by the aid of chain conveyor furnaces and completely packaging and forming the high-reliability glass passivation high-voltage silicon stacks. Each procedure for corroding the tabletop of each chip lasts for 3 minutes. The method has the advantages that the high-voltage silicon stacks are manufactured by the aid of the leads with the tungsten electrodes, accordingly, the surge current resistance of products can be improved, and the reliability of the high-voltage silicon stacks manufactured by the aid of the leads with the tungsten electrodes can be obviously improved.
Description
Technical field
The present invention relates to high voltage silicon stack technical field, particularly relate to a kind of manufacture method of highly reliable glassivation high voltage silicon stack.
Background technology
Because most domestic high voltage silicon stack is Plastic Package, product reliability is not high, and the chemical property of plastic construction is unstable, in tube core mesa etch forming process, easy and mixed acid reacts, and makes tube core corrosion process uncontrollable, increases the contamination to table top of metal impurities ion.
Summary of the invention
The present invention mainly solves technical problem existing in prior art, thus provides a kind of peak-inverse voltage high, and encapsulation volume is little, the manufacture method of the highly reliable glassivation high voltage silicon stack that reliability is high.
Above-mentioned technical problem of the present invention is mainly solved by following technical proposals:
The manufacture method of highly reliable glassivation high voltage silicon stack provided by the invention, comprises the following steps:
A, several tube cores are adopted the disk of table top forming machine blast shaping given size,
B, by after the process of described tube core split pole, the mode of graphite jig lamination sintering is adopted described tube core to be carried out sintering formation chip,
C, the contact conductor containing tungsten electrode is welded on the two ends of described chip,
D, the table top of employing mixed acid to described chip corrode, corrosion twice, each 3 minutes, then use a large amount of deionized water rinsing clean,
E, apply on the table top of described chip passivation packaged glass powder slurry, high-temperature molding under chain-conveyer furnace, completes encapsulated moulding.
Further, the solder that described contact conductor and described chips welding use is aluminium.
Further, the mixed acid in described step c is nitric acid, hydrofluoric acid, glacial acetic acid, sulfuric acid according to: the ratio mixing manufacture of 9:4.5:4:10 forms.
Further, the maximum direct current density of described tungsten electrode is less than 2 × 10
5a/cm
2.
Beneficial effect of the present invention is: the Antisurge current ability that can improve silicon stack, tungsten electrode lead-in wire is due to its stable chemical performance simultaneously, substantially do not react with mixed acid in chip table top etching forming process, make chip corrosion process controlled, reduce the contamination to table top of metal impurities ion, greatly reduce the normal temperature of product, high temperature reverse leakage current, under can realizing product 7500V, leakage current is less than 1 μ A, 7500V, at 150 DEG C, high-temperature current leakage is less than 50 μ A, adopt the passivation glass powder dusting of mating with tungsten electrode shaping simultaneously, improve the resisting temperature circulation ability of product, the ability that product meets-55 DEG C ~ 175 DEG C lower 500 temperature cycles of condition can be realized.Product can realize the anti-surge forward current ability of more than 25A simultaneously.
Accompanying drawing explanation
In order to be illustrated more clearly in the embodiment of the present invention or technical scheme of the prior art, be briefly described to the accompanying drawing used required in embodiment or description of the prior art below, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
Fig. 1 is the method flow diagram of the manufacture method of highly reliable glassivation high voltage silicon stack of the present invention;
Fig. 2 is the structural representation of the high voltage silicon stack of the manufacture method of highly reliable glassivation high voltage silicon stack of the present invention.
Embodiment
Below in conjunction with accompanying drawing, the preferred embodiments of the present invention are described in detail, can be easier to make advantages and features of the invention be readily appreciated by one skilled in the art, thus more explicit defining is made to protection scope of the present invention.
Consult shown in Fig. 1-2, the manufacture method of highly reliable glassivation high voltage silicon stack of the present invention, it comprises the following steps: the first step, several tube cores 1 are adopted the disk of the shaping given size of table top forming machine blast, second step, after the process of tube core 1 split pole, adopt the mode of graphite jig lamination sintering tube core 1 to be carried out sintering and form chip 2, 3rd step, contact conductor 4 containing tungsten electrode 3 is welded on the two ends of chip 2, 4th step, the table top of mixed acid to chip 2 is adopted to corrode, corrode twice, each 3 minutes, then use a large amount of deionized water rinsing clean, 5th step, the table top of chip 2 applies passivation packaged glass powder slurry 5, high-temperature molding under chain-conveyer furnace, complete encapsulated moulding.Adopt method of the present invention can improve the Antisurge current ability of silicon stack, tungsten electrode lead-in wire 4 is due to its stable chemical performance simultaneously, substantially do not react with mixed acid in chip 2 mesa etch forming process, make chip 2 corrosion process controlled, reduce the contamination to table top of metal impurities ion, greatly reduce the normal temperature of product, high temperature reverse leakage current, under can realizing product 7500V, leakage current is less than 1 μ A, 7500V, at 150 DEG C, high-temperature current leakage is less than 50 μ A, adopt the passivation glass powder dusting of mating with tungsten electrode shaping simultaneously, improve the resisting temperature circulation ability of product, the ability that product meets-55 DEG C ~ 175 DEG C lower 500 temperature cycles of condition can be realized, product can realize the anti-surge forward current ability of more than 25A simultaneously.
Preferably, contact conductor 4 welds used solder for aluminium with chip 2.Mixed acid in step c is nitric acid, hydrofluoric acid, glacial acetic acid, sulfuric acid according to: the ratio mixing manufacture of 9:4.5:4:10 forms.The maximum direct current density of tungsten electrode 3 is less than 2 × 10
5a/cm
2.
Above, be only the specific embodiment of the present invention, but protection scope of the present invention is not limited thereto, any change of expecting without creative work or replacement, all should be encompassed within protection scope of the present invention.Therefore, the protection range that protection scope of the present invention should limit with claims is as the criterion.
Claims (4)
1. a manufacture method for highly reliable glassivation high voltage silicon stack, is characterized in that: comprise the following steps:
A, several tube cores (1) are adopted the disk of table top forming machine blast shaping given size,
B, by after described tube core (1) split pole process, the mode of graphite jig lamination sintering is adopted described tube core (1) to be carried out sintering formation chip (2),
C, the contact conductor (4) containing tungsten electrode (3) is welded on the two ends of described chip (2),
D, the table top of employing mixed acid to described chip (2) corrode, corrosion twice, each 3 minutes, then use a large amount of deionized water rinsing clean,
E, apply on the table top of described chip (2) passivation packaged glass powder slurry (5), high-temperature molding under chain-conveyer furnace, completes encapsulated moulding.
2. the manufacture method of highly reliable glassivation high voltage silicon stack as claimed in claim 1, is characterized in that: described contact conductor (4) welds used solder for aluminium with described chip (2).
3. the manufacture method of highly reliable glassivation high voltage silicon stack as claimed in claim 1, is characterized in that: the mixed acid in described step c is nitric acid, hydrofluoric acid, glacial acetic acid, sulfuric acid according to: the ratio mixing manufacture of 9:4.5:4:10 forms.
4. the manufacture method of highly reliable glassivation high voltage silicon stack as claimed in claim 1, is characterized in that: the maximum direct current density of described tungsten electrode (3) is less than 2 × 10
5a/cm
2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510193603.2A CN104795335B (en) | 2015-04-22 | 2015-04-22 | A kind of manufacture method of highly reliable glassivation high voltage silicon rectifier stack |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510193603.2A CN104795335B (en) | 2015-04-22 | 2015-04-22 | A kind of manufacture method of highly reliable glassivation high voltage silicon rectifier stack |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104795335A true CN104795335A (en) | 2015-07-22 |
| CN104795335B CN104795335B (en) | 2017-06-27 |
Family
ID=53560052
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510193603.2A Active CN104795335B (en) | 2015-04-22 | 2015-04-22 | A kind of manufacture method of highly reliable glassivation high voltage silicon rectifier stack |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104795335B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057789A (en) * | 2016-07-01 | 2016-10-26 | 天津中环半导体股份有限公司 | SMD high-voltage silicon stack and production process thereof |
| CN107219728A (en) * | 2017-07-31 | 2017-09-29 | 中国振华集团永光电子有限公司（国营第八七三厂） | It is a kind of to prevent the photolithography method of silicon chip fin |
| CN108172514A (en) * | 2017-12-27 | 2018-06-15 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of manufacturing method of glassivation surface mount packages transient voltage suppressor diode |
| CN108493107A (en) * | 2018-04-19 | 2018-09-04 | 如皋市大昌电子有限公司 | A kind of manufacturing method of highly reliable glassivation high voltage silicon rectifier stack |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101127484A (en) * | 2007-05-23 | 2008-02-20 | 中国科学院电工研究所 | A digital high voltage DC power |
| CN201877425U (en) * | 2010-09-15 | 2011-06-22 | 上海美高森美半导体有限公司 | High-voltage silicon stack |
| CN203491256U (en) * | 2013-09-16 | 2014-03-19 | 海湾电子(山东)有限公司 | A high-voltage silicon stack diode |
| CN103715185A (en) * | 2013-12-31 | 2014-04-09 | 杭州士兰集成电路有限公司 | Diode and manufacturing method thereof |
-
2015
- 2015-04-22 CN CN201510193603.2A patent/CN104795335B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101127484A (en) * | 2007-05-23 | 2008-02-20 | 中国科学院电工研究所 | A digital high voltage DC power |
| CN201877425U (en) * | 2010-09-15 | 2011-06-22 | 上海美高森美半导体有限公司 | High-voltage silicon stack |
| CN203491256U (en) * | 2013-09-16 | 2014-03-19 | 海湾电子(山东)有限公司 | A high-voltage silicon stack diode |
| CN103715185A (en) * | 2013-12-31 | 2014-04-09 | 杭州士兰集成电路有限公司 | Diode and manufacturing method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106057789A (en) * | 2016-07-01 | 2016-10-26 | 天津中环半导体股份有限公司 | SMD high-voltage silicon stack and production process thereof |
| CN107219728A (en) * | 2017-07-31 | 2017-09-29 | 中国振华集团永光电子有限公司（国营第八七三厂） | It is a kind of to prevent the photolithography method of silicon chip fin |
| CN108172514A (en) * | 2017-12-27 | 2018-06-15 | 中国振华集团永光电子有限公司（国营第八三七厂） | A kind of manufacturing method of glassivation surface mount packages transient voltage suppressor diode |
| CN108493107A (en) * | 2018-04-19 | 2018-09-04 | 如皋市大昌电子有限公司 | A kind of manufacturing method of highly reliable glassivation high voltage silicon rectifier stack |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104795335B (en) | 2017-06-27 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104795335A (en) | Method for manufacturing high-reliability glass passivation high-voltage silicon stacks | |
| CN101577234B (en) | Production process of commutation diode | |
| CN106024625B (en) | A kind of highly reliable Flouride-resistani acid phesphatase glassivation voltage adjustment diode manufacturing method | |
| CN102263140A (en) | Plastic package power diode and manufacturing technology thereof | |
| CN106024624B (en) | A kind of manufacturing method of highly reliable Flouride-resistani acid phesphatase transient voltage suppressor | |
| CN204391122U (en) | A kind of micro glass passivation encapsulation rectifier diode | |
| CN101989533A (en) | Chip packaging block de-packaging method and device | |
| CN108010841A (en) | A kind of manufacture method of diode and thus obtained diode | |
| CN104269356B (en) | Method for manufacturing 50A high-current fast recovery diode | |
| CN203150557U (en) | Reverse direction GPP high voltage diode chip in automobile module group | |
| CN104377129B (en) | A kind of more than 1.3 ten thousand volts super-pressure, the fast preparation method for recovering glass-encapsulated diode | |
| CN102214570B (en) | Production method of high stability trigger diode | |
| CN107887281B (en) | A kind of manufacturing method and high voltage silicon rectifier stack of low-power consumption high-speed switch plastic sealed high-voltage silicon stack | |
| CN106024911B (en) | A kind of U-shaped packaging method of glassivation diode | |
| CN106356294A (en) | Manufacturing method of electrode on back surface of power device and structure of electrode | |
| CN103474377A (en) | Pre-soldering jig for GPP chips and using method thereof | |
| CN107301949A (en) | A kind of use tungsten electrode manufactures the manufacture method of highly reliable transient voltage suppressor diode | |
| CN203471104U (en) | Prewelding jig for GPP chips | |
| CN204538012U (en) | A kind of highly reliable glassivation high voltage silicon stack | |
| CN104485282B (en) | Manufacturing method of discharge tube chip | |
| CN103780102B (en) | A kind of intelligent semi-conductor power model | |
| CN202352679U (en) | Glass-passivated high-power diode | |
| CN203775045U (en) | Intelligent semiconductor power module | |
| CN209981205U (en) | High heat dissipation plug-in components diode | |
| CN104362137A (en) | High-heat-dissipativity diode |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |