CN204391122U - A kind of micro glass passivation encapsulation rectifier diode - Google Patents
A kind of micro glass passivation encapsulation rectifier diode Download PDFInfo
- Publication number
- CN204391122U CN204391122U CN201520098661.2U CN201520098661U CN204391122U CN 204391122 U CN204391122 U CN 204391122U CN 201520098661 U CN201520098661 U CN 201520098661U CN 204391122 U CN204391122 U CN 204391122U
- Authority
- CN
- China
- Prior art keywords
- electrode
- tube core
- rectifier diode
- face
- wire
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The utility model discloses a kind of micro glass passivation encapsulation rectifier diode, comprise tube core, electrode, lead-in wire and glass packaging shell.Described tube core is the PN junction that monocrystalline silicon is made, and its P face and N face are connected with going between with electrode respectively successively.Described tube core and electrode are bonded together by metal film layer melting welding, and described electrode and lead-in wire are by together with brazing sheet fusion weld.The outer dia of rectifier diode glassivation encapsulated accomplishes below 1 millimeter, achieves the microminiaturization of rectifier diode; Meanwhile, glassivation encapsulation is compared with Plastic Package, and the high temperature reverse leakage current of diode is less, operating temperature range is wider, reliability is higher.
Description
Technical field
The utility model relates to miniature rectifier diode, is specifically related to a kind of micro glass passivation encapsulation rectifier diode.
Background technology
Miniature rectifier diode volume is little, is applicable to the occasion that installing space is little, product weight needs strict control.At present, on market, most miniature rectifier diode all adopts Plastic Package mode, Plastic Package can cause that high temperature reverse leakage current is large, operating temperature range is narrower, can only to work at-55 DEG C ~ 125 DEG C temperature and reliability is not high, Aeronautics and Astronautics etc. can not be used in higher field is required to product reliability.Just can overcome the above problems to a great extent according to glass packaging mode.But the glass packaging of miniature rectifier diode compares and is difficult to realize, particularly packaged glass housing diameter be less than 1mm, Mini-size glass-encapsulation rectifier diode product that reliability is high is also rarely found on market at home.
Utility model content
For solving the problems of the technologies described above, the utility model discloses a kind of micro glass passivation encapsulation rectifier diode, this micro glass passivation encapsulation rectifier diode is achieved by special preparation method, and the maximum gauge of the glass shell encapsulated is less than 1mm.
Concrete technical scheme of the present utility model is openly as follows.
Disclosed in the utility model, micro glass passivation encapsulation rectifier diode, comprises tube core, electrode, lead-in wire and glass packaging shell.Described tube core is the PN junction that monocrystalline silicon is made, and its P face and N face are connected with going between with electrode respectively successively.Described tube core and electrode are bonded together by metal film layer melting welding, and described electrode and lead-in wire are by together with brazing sheet fusion weld.Described electrode is made up of metal molybdenum or tungsten, and described lead-in wire is made up of metallic nickel or iron-nickel alloy, and described metal film layer is made from aluminum or silver.Described tube core and electrode are coated on glass packaging enclosure completely.
Further, the maximum gauge of described glass packaging shell is 0.7 ~ 1.0mm, and length is 1.0 ~ 1.5mm.
Further, on the described metal film layer P face that is prepared in tube core by vacuum deposition method and N face.
Further, the thickness of described tube core is 0.1 ~ 0.4 ± 0.05mm, and the thickness of metal film layer is 0.01 ~ 0.015 ± 0.002mm, and the thickness of described electrode is 0.2 ~ 0.4 ± 0.05mm.
Further, the diameter of described tube core and electrode is 0.4 ~ 0.6 ± 0.05mm, and the diameter of described lead-in wire is 0.1 ~ 0.4 ± 0.05mm.
The beneficial effects of the utility model are: the outer dia of rectifier diode glassivation encapsulated accomplishes below 1 millimeter, achieves the microminiaturization of rectifier diode; Meanwhile, glassivation encapsulation is compared with Plastic Package, and the high temperature reverse leakage current of diode is little, operating temperature range is wide, reliability is high.
Accompanying drawing explanation
The structural representation of Fig. 1 micro glass passivation encapsulation rectifier diode disclosed in the utility model;
In figure: 1-tube core, 2-metal film layer, 3-electrode, 4-brazing sheet, 5-glass packaging shell, 6-goes between.
Embodiment
Further describe the technical solution of the utility model below, described in should be appreciated that the claimed scope of the utility model is not limited to.
Disclosed in the utility model, micro glass passivation encapsulation rectifier diode, comprises tube core 1, electrode 3, lead-in wire 6 and glass packaging shell 3.The PN junction that described tube core 1 is made for monocrystalline silicon, its P face and N face 6 to be connected with electrode 3 and going between respectively successively.Described tube core 1 is bonded together by metal film layer 2 melting welding with electrode 3, and described electrode 3 passes through together with brazing sheet 4 fusion weld with lead-in wire 6.Described electrode 3 is made up (or being applicable to all metal electrode material of this kind of encapsulating structure) of metal molybdenum or tungsten, described lead-in wire 6 is made up (or being applicable to all metal electrode material of this kind of encapsulating structure) of metallic nickel or iron-nickel alloy, and described metal film layer 2 is made from aluminum or silver.It is inner that described tube core 1 and electrode 3 are coated on glass packaging shell 3 completely.
Concrete, in above-mentioned micro glass passivation encapsulation rectifier diode: the maximum diameter of described glass packaging shell 5 is 0.7 ~ 1.0mm, and length is 1.0 ~ 1.5mm; On the P face that described metal film layer 2 is prepared in tube core by vacuum coating method and N face, such as vacuum deposition method; The thickness of described tube core 1 is 0.1 ~ 0.4 ± 0.05mm, and the thickness of metal film layer 2 is 0.01 ~ 0.015 ± 0.002mm, and the thickness of described electrode 3 is 0.2 ~ 0.4 ± 0.05mm; The diameter of described tube core 1 and electrode 3 is 0.4 ~ 0.6 ± 0.05mm, and the diameter of described lead-in wire is 0.1 ~ 0.4 ± 0.05mm.Above-mentioned size can adjust according to the actual requirements in respective scope.
Disclosed in the utility model, micro glass passivation encapsulation rectifier diode can be obtained by following preparation method:
(1) tube core is prepared.On monocrystalline silicon piece, PN junction is formed by deeply tying method of diffusion, prepared the metal film layer of aluminium or silver again by vacuum deposition method in the P face of PN junction and N face, then by ultrasonic cut, the PN junction silicon single crystal wafer being coated with metal film layer is cut into the tube core that diameter is 0.5 ~ 0.6mm.
(2) corrosion cleaning tube core.The tube core of mixed acid to well cutting of nitric acid, hydrofluoric acid, sulfuric acid and glacial acetic acid is adopted to corrode, the mass percentage concentration of nitric acid, hydrofluoric acid, sulfuric acid and glacial acetic acid is respectively: 95% ~ 98%, >=40%, 65% ~ 68% and >=99.5%, preparation mixed acid time take nitric acid, hydrofluoric acid, sulfuric acid, glacial acetic acid volume proportion be 6:2:3:5, etching time is 3 ~ 5min, tube core acetone after etching carries out Ultrasonic Cleaning, then carries out dewatering, drying.Cleaned by the corrosion of above-mentioned mixed acid, effectively can remove mechanical damage layer and the foreign ion of chip table.
(3) to freeze assembling.Using brazing sheet as solder, by vacuum high-temperature sintering method, molybdenum or tungsten electrode are formed overall contact conductor together with nickel metal lead wire or iron-nickel alloy welding lead, the temperature of vacuum-sintering is 800 ~ 900 DEG C; Again two contact conductors and a tube core combo are loaded in graphite jig, during combo the electrode end surface of two contact conductors respectively with the metallic film close contact on the P face of tube core and N face, contact conductor, tube core, contact conductor vertically stack successively, and contact conductor are up placed the metal cap with constant weight; Again graphite jig is put into vacuum sintering furnace, and at high temperature contact conductor and tube core are carried out melting welding bonding, the melting welding bonding temperature that aluminum metal film is corresponding is 650 DEG C, and the melting welding bonding temperature that silver metal film is corresponding is 480 DEG C.The object of contact conductor up being placed metal cap is to allow electrode end surface and tube core fit tightly, and improves the quality of melting welding bonding.Metallic film on tube core is the solder realizing contact conductor and tube core bonding.
(4) mesa etch.The naked diode assembled freezing inserts in special corrosion dish, and adopts the mixed acid of nitric acid, hydrofluoric acid, glacial acetic acid, sulfuric acid and phosphoric acid to corrode it, corrosion twice, each 30 seconds; The mass percent concentration of nitric acid used, hydrofluoric acid, glacial acetic acid, sulfuric acid and phosphoric acid is respectively: 95% ~ 98%, >=40%, >=99.5%, 65% ~ 68%, >=85%, during configuration mixed acid, the volume ratio of nitric acid, hydrofluoric acid, glacial acetic acid, sulfuric acid and phosphoric acid is 1.2:1:1:2:1; Etch a large amount of deionized water of rear use to rinse.The proportioning of above-mentioned mixed acid is conducive to the cleaning to tube core table top, can reduce again its corrosion to electrode material as far as possible simultaneously.
(5) encapsulated moulding.
After being bended by naked diode after corrosion cleaning, manual evenly coated glass powder slurry (except lead portion), is then inserted in the shaping boat of quartz sand, is sent in high-temperature molding stove shaping; Forming temperature between 610 DEG C ~ 685 DEG C, molding time 2 hours.Concrete, coated glass powder by time can with fine needle glass powder paste be provoked and evenly be coated on tube core, in tube core and electrode are all wrapped in; 6 sections of chain-type sintering furnaces can be adopted time shaping to carry out high-temperature molding; The length of 6 sections of chain-conveyer furnaces every section is 2.5m; By the order that the shaping boat of quartz sand passes through, the sintering temperature of 6 sections of chain-conveyer furnaces is followed successively by: 500 ± 20 DEG C, 610 ± 20 DEG C, 685 ± 15 DEG C, 560 ± 20 DEG C, 530 ± 10 DEG C, 500 ± 15 DEG C, the speed of the shaping boat of quartz sand with 8 ~ 10cm/min in chain-type sintering furnace is at the uniform velocity passed through.
Specifically being of a size of of the micro glass passivation encapsulation rectifier diode obtained by above technique: the maximum diameter of glass packaging shell 5 is 0.83mm, and length is 1.21mm; The thickness of tube core 1 is 0.2 ± 0.05mm, and the thickness of metal film layer 2 is 0.012 ± 0.002mm, and the thickness of described electrode 3 is 0.3 ± 0.05mm; The diameter of described tube core 1 and electrode 3 is 0.55mm, and the diameter of described lead-in wire is 0.2 ± 0.05mm.Micro glass passivation encapsulation rectifier diode after having encapsulated carries out electric parameters testing, test passes, with ink at its negative pole print colors colour circle clearly, just obtains the finished product of micro glass passivation encapsulation rectifier diode.
Claims (5)
1. a micro glass passivation encapsulation rectifier diode, comprise tube core (1), electrode (3), glass packaging shell (5) and lead-in wire (6), the PN junction that tube core (1) is made for monocrystalline silicon, the P face of tube core (1) is connected with electrode (3) and go between (6) respectively successively with N face, it is characterized in that: described tube core (1) and electrode (3) are bonded together by metal film layer (2) melting welding, described electrode (3) and lead-in wire (6) are by brazing sheet (4) fusion weld together; Described electrode (3) is made up of metal molybdenum or tungsten, and described lead-in wire (6) is made up of metallic nickel or iron-nickel alloy, and described metal film layer (2) is made from aluminum or silver; It is inner that described tube core (1) and electrode (3) are coated on glass packaging shell (5) completely.
2. a kind of micro glass passivation encapsulation rectifier diode as claimed in claim 1, is characterized in that: the maximum gauge of described glass packaging shell (5) is 0.7 ~ 1.0mm, and length is 1.0 ~ 1.5mm.
3. a kind of micro glass passivation encapsulation rectifier diode as claimed in claim 1, is characterized in that: on the P face that described metal film layer (2) is prepared in tube core by vacuum coating method and N face.
4. a kind of micro glass passivation encapsulation rectifier diode as claimed in claim 1, it is characterized in that: the thickness of described tube core (1) is 0.1 ~ 0.4 ± 0.05mm, the thickness of described metal film layer (2) is 0.01 ~ 0.015 ± 0.002mm, and the thickness of described electrode (3) is 0.2 ~ 0.4 ± 0.05mm.
5. a kind of micro glass passivation encapsulation rectifier diode as claimed in claim 1, it is characterized in that: the diameter of described tube core (1) and electrode (3) is 0.4 ~ 0.6 ± 0.05mm, the diameter of described lead-in wire (6) is 0.1 ~ 0.4 ± 0.05mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520098661.2U CN204391122U (en) | 2015-02-11 | 2015-02-11 | A kind of micro glass passivation encapsulation rectifier diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520098661.2U CN204391122U (en) | 2015-02-11 | 2015-02-11 | A kind of micro glass passivation encapsulation rectifier diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204391122U true CN204391122U (en) | 2015-06-10 |
Family
ID=53363817
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520098661.2U Active CN204391122U (en) | 2015-02-11 | 2015-02-11 | A kind of micro glass passivation encapsulation rectifier diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204391122U (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659111A (en) * | 2015-02-11 | 2015-05-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Micro commutation diode supporting glass passivation packaging |
| CN105529368A (en) * | 2016-02-03 | 2016-04-27 | 泰州优宾晶圆科技有限公司 | GPP rectifier diode |
| CN108231909A (en) * | 2017-12-22 | 2018-06-29 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of highly reliable microminiature glassivation compound diode and its preparation method and application |
| CN109755104A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | A kind of raising chip freezes production capacity technique in advance |
| CN111933535A (en) * | 2020-08-10 | 2020-11-13 | 如皋市大昌电子有限公司 | Processing method of axial diode |
| CN113380622A (en) * | 2021-06-11 | 2021-09-10 | 青岛海宜丰电力电子有限公司 | High-temperature diode preparation method and high-temperature diode |
-
2015
- 2015-02-11 CN CN201520098661.2U patent/CN204391122U/en active Active
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104659111A (en) * | 2015-02-11 | 2015-05-27 | 中国振华集团永光电子有限公司（国营第八七三厂） | Micro commutation diode supporting glass passivation packaging |
| CN105529368A (en) * | 2016-02-03 | 2016-04-27 | 泰州优宾晶圆科技有限公司 | GPP rectifier diode |
| CN109755104A (en) * | 2017-11-01 | 2019-05-14 | 天津环鑫科技发展有限公司 | A kind of raising chip freezes production capacity technique in advance |
| CN109755104B (en) * | 2017-11-01 | 2022-05-03 | 天津环鑫科技发展有限公司 | Process for improving productivity of chip pre-sintering welding |
| CN108231909A (en) * | 2017-12-22 | 2018-06-29 | 中国振华集团永光电子有限公司（国营第八七三厂） | A kind of highly reliable microminiature glassivation compound diode and its preparation method and application |
| CN111933535A (en) * | 2020-08-10 | 2020-11-13 | 如皋市大昌电子有限公司 | Processing method of axial diode |
| CN113380622A (en) * | 2021-06-11 | 2021-09-10 | 青岛海宜丰电力电子有限公司 | High-temperature diode preparation method and high-temperature diode |
| CN113380622B (en) * | 2021-06-11 | 2022-08-12 | 青岛海宜丰电力电子有限公司 | High-temperature diode preparation method and high-temperature diode |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN204391122U (en) | A kind of micro glass passivation encapsulation rectifier diode | |
| CN104659111A (en) | Micro commutation diode supporting glass passivation packaging | |
| CN105977309B (en) | A kind of highly reliable Flouride-resistani acid phesphatase glassivation fast-recovery commutation diode manufacturing method | |
| CN103187543B (en) | Black box of a kind of battery and preparation method thereof and a kind of lithium ion battery | |
| CN106024625B (en) | A kind of highly reliable Flouride-resistani acid phesphatase glassivation voltage adjustment diode manufacturing method | |
| CN101752248A (en) | Thyristor core manufacturing process | |
| CN110289170A (en) | Anode foil for aluminum electrolytic capacitor, preparation method and the capacitor that edge is left white | |
| CN112186044A (en) | Glass passivation entity encapsulation low-voltage diode and manufacturing method thereof | |
| CN107393821A (en) | A kind of manufacture method of the miniature Surface Mount diode of highly reliable glassivation | |
| CN107393822A (en) | A kind of manufacture method suppressed with transient voltage with the glassivation fly-wheel diode of rectification function | |
| CN104795335B (en) | A kind of manufacture method of highly reliable glassivation high voltage silicon rectifier stack | |
| CN102468092B (en) | Method for preparing heat element for heated cathode | |
| CN109273371A (en) | A kind of encapsulating structure of power semiconductor part and packaging method | |
| CN107301949A (en) | A kind of use tungsten electrode manufactures the manufacture method of highly reliable transient voltage suppressor diode | |
| CN110379862B (en) | Silicon carbide diode and manufacturing method thereof | |
| CN205789919U (en) | A kind of hydrid integrated circuit aluminium silicon carbide integral packaging shell | |
| CN209626638U (en) | A kind of 400W laser list pumping source ceramic package shell | |
| CN209598176U (en) | A kind of half gas chamber argon arc founding copper stranded conductor electrode tip molding machine | |
| CN211016802U (en) | Anode foil for aluminum electrolytic capacitor with edge portion left white and capacitor | |
| CN108206219A (en) | A kind of highly reliable glassivation surface mount packages voltage adjustment diode and preparation method thereof | |
| CN202758690U (en) | Small glass seal diode structure negative temperature coefficient (NTC) thermistor | |
| CN212392250U (en) | Glass passivation surface-mounted diode | |
| CN102664080B (en) | Processing technology for glass encapsulated diode type thermistor | |
| CN110970298B (en) | Epoxy packaged micro diode and manufacturing process thereof | |
| CN107394067B (en) | Parallel structure sealing electrode and assembling method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant |