CN108231909A - A kind of highly reliable microminiature glassivation compound diode and its preparation method and application - Google Patents
A kind of highly reliable microminiature glassivation compound diode and its preparation method and application Download PDFInfo
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- CN108231909A CN108231909A CN201711406703.4A CN201711406703A CN108231909A CN 108231909 A CN108231909 A CN 108231909A CN 201711406703 A CN201711406703 A CN 201711406703A CN 108231909 A CN108231909 A CN 108231909A
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- 150000001875 compounds Chemical class 0.000 title claims abstract description 35
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 238000004519 manufacturing process Methods 0.000 claims abstract description 26
- 230000001052 transient effect Effects 0.000 claims abstract description 24
- 230000006870 function Effects 0.000 claims abstract description 20
- 239000004020 conductor Substances 0.000 claims abstract description 19
- 238000002844 melting Methods 0.000 claims abstract description 15
- 230000008018 melting Effects 0.000 claims abstract description 15
- 238000005245 sintering Methods 0.000 claims abstract description 15
- 238000003466 welding Methods 0.000 claims abstract description 15
- 239000011241 protective layer Substances 0.000 claims abstract description 11
- 230000009993 protective function Effects 0.000 claims abstract description 4
- 238000005260 corrosion Methods 0.000 claims description 22
- 230000007797 corrosion Effects 0.000 claims description 22
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 20
- 238000002161 passivation Methods 0.000 claims description 15
- 239000002253 acid Substances 0.000 claims description 13
- 239000010410 layer Substances 0.000 claims description 13
- 238000000465 moulding Methods 0.000 claims description 12
- 238000009792 diffusion process Methods 0.000 claims description 11
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 10
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 10
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 10
- 239000003518 caustics Substances 0.000 claims description 10
- 238000005566 electron beam evaporation Methods 0.000 claims description 10
- 239000011521 glass Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims description 10
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical group [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 10
- 229910052721 tungsten Inorganic materials 0.000 claims description 10
- 239000010937 tungsten Substances 0.000 claims description 10
- 238000001771 vacuum deposition Methods 0.000 claims description 10
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 9
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 9
- 239000002184 metal Substances 0.000 claims description 9
- UGKDIUIOSMUOAW-UHFFFAOYSA-N iron nickel Chemical compound [Fe].[Ni] UGKDIUIOSMUOAW-UHFFFAOYSA-N 0.000 claims description 8
- 239000000203 mixture Substances 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 6
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 5
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 5
- 229960000583 acetic acid Drugs 0.000 claims description 5
- 239000012362 glacial acetic acid Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 5
- 238000002156 mixing Methods 0.000 claims description 5
- 229910017604 nitric acid Inorganic materials 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 230000005611 electricity Effects 0.000 claims description 4
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 239000011787 zinc oxide Substances 0.000 claims description 3
- 239000003513 alkali Substances 0.000 claims description 2
- 239000000428 dust Substances 0.000 claims description 2
- 239000011259 mixed solution Substances 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- 239000000243 solution Substances 0.000 claims description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 1
- 239000011247 coating layer Substances 0.000 claims 1
- 239000012467 final product Substances 0.000 claims 1
- 229910052742 iron Inorganic materials 0.000 claims 1
- 238000010521 absorption reaction Methods 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000012360 testing method Methods 0.000 description 13
- 241000519996 Teucrium chamaedrys Species 0.000 description 8
- 230000001681 protective effect Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 229960002050 hydrofluoric acid Drugs 0.000 description 4
- 230000005764 inhibitory process Effects 0.000 description 4
- 238000005520 cutting process Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 230000001351 cycling effect Effects 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 238000009863 impact test Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66083—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by variation of the electric current supplied or the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. two-terminal devices
- H01L29/6609—Diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Glass Compositions (AREA)
Abstract
The invention discloses a kind of highly reliable microminiature glassivation compound diodes and its preparation method and application, belong to diode manufacturing technology field；It includes tube body, lead and protective layer；The wherein described tube body is made of two electrodes and chip A, chip B, and tube body periphery is wrapped up by protective layer and protected；After the electrode and lead high temperature sintering, be welded into the contact conductor of an entirety, under contact conductor and tube body high temperature melting welding key and to get.Diode size of the present invention is minimum; pipe diameter is less than Φ 1.5mm; tube length is less than 1.8mm; device has been provided simultaneously with transient voltage and has inhibited function and high voltage protective function; the absorption rate of coil inverse electromotive force can be promoted; the mounting means in coil protects circuit is enormously simplified, which can apply in the freewheeling circuit of subminiature relay, have preferable market popularization value.
Description
Technical field
The present invention relates to diode fabrication technical field, especially a kind of highly reliable microminiature glassivation compound diode
And its manufacturing method and application.
Background technology
There is the structure of coil, it can generate the very big inverse electromotive force of voltage, can puncture when power is off inside relay
The driving triode of relay will set protective circuit of diode, commonly referred to as afterflow two in relay drive circuit thus
Pole pipe, with protective relay driving tube, in order to improve the rate of releasing of the inverse electromotive force of relay, generally use one end has
Rectification function, one end have the function of the compound diode that transient voltage inhibits, and international at present, domestic compound diode size is most
It is small in more than 1.8mm, for length in 3.3~5mm or so in the case where installation dimension is limited, traditional compound diode cannot
Meet the requirement of midget relay.
The present inventor once applied " a kind of to inhibit and the glassivation fly-wheel diode of rectification function with transient voltage
Manufacturing method ", the device one end have the function of transient voltage inhibition, and the other end has the function of the high voltage protective of rectifier diode,
Can promote the absorption rate of coil inverse electromotive force, but its chip size be divided into 1.5mm~5mm, pipe diameter for 3mm~
Several specifications of 8mm can not still use in the freewheeling circuit of some midget relays when oversized or inconvenient to use.
Invention content
In order to solve the above technical problems, the present invention provides a kind of highly reliable microminiature glassivation compound diode and its
Preparation method and application, the compound diode use glass passivation process, and size is minimum, are provided simultaneously with transient voltage and inhibit function
With high voltage protective function, there is higher reliability, the requirement of midget relay can be met, there are higher application and popularizations
Value.
The present invention is achieved by the following technical programs：
A kind of highly reliable microminiature glassivation compound diode, including tube body, lead and protective layer；The wherein described pipe
Body is made of two electrodes and chip A, chip B；The chip A is connected to one end of electrode, and the chip B is connected to separately
One end of one electrode, the chip A and the integrally welded composition tube bodies of chip B；It is wrapped up by protective layer the tube body periphery
Protection；After the electrode and lead high temperature sintering, the contact conductor of an entirety is welded into, is melted under contact conductor and tube body high temperature
Weld key and to get.
The pipe diameter is less than Φ 1.5mm, and tube length is less than 1.8mm；The a diameter of Φ 0.6mm of the chip~
Φ0.8mm。
The electrode is tungsten electrode；The size of the tungsten electrode is Φ 0.6mm × 0.7~Φ 0.8mm × 0.7；It is described
Lead for iron nickel wire lead, a diameter of Φ 0.2mm of the iron nickel wire lead.
The chip A is to have the function of the chip of high voltage protective, and production method is：Lead to using n type single crystal silicon piece as material
It crosses single side depth-diffusion process and forms unidirectional PN junction, thickness is made in die surfaces by way of electron beam evaporation or vacuum coating
It spends for 10 μm~15 μm metal film layers, tube core is cut into diameter of phi 0.6mm~Φ using green laser after completing
0.8mm, chip surface is handled to get.
The chip B is to have the function of the chip that transient voltage inhibits, and production method is：Use n type single crystal silicon piece
As substrate material, by two-sided depth-diffusion process, two-way PN junction is formed, by way of electron beam evaporation or vacuum coating
It is 10 μm~15 μm metal film layers to make thickness in die surfaces, cuts into tube core directly using green laser after completing
Diameter Φ 0.6mm~Φ 0.8mm, chip surface is handled to get.
A kind of preparation method of highly reliable microminiature glassivation compound diode, includes the following steps：
(1), chip welds：After tungsten electrode and iron nickel wire lead high temperature sintering, the contact conductor of an entirety is welded into, so
Afterwards by contact conductor and tube body at a high temperature of 600~800 DEG C melting welding key and；
(2), surface passivation, by step (1) melting welding key and after tube body by acid corrosion 3~4 times, each 1min~
4min；Caustic corrosion 2 times, each 1min~4min；Passivation 3~5 times, each 1min~4min；
(3), encapsulated moulding, uniform coating glass slurry on tube surfaces after passivation, is put into low in low temperature moulding stove
Temperature molding 3h~5h, sets 10 DEG C/min~15 DEG C of heating rate/min, heating-up time 45min~65min, sintering temperature 620
DEG C~660 DEG C, constant temperature time 5min~40min, rate of temperature fall≤10 DEG C/min.
In the step (3) in acid corrosion acid corrosion liquid be by mass percentage analytically pure 65%~68% nitric acid,
>=40% hydrofluoric acid, 95%~98% sulfuric acid, >=99.5% glacial acetic acid, >=99.5% phosphoric acid by volume 1:1.2:
1:2：1 mixed solution.
Caustic corrosion liquid is 3%~6% potassium hydroxide solution in caustic corrosion in the step (3), and caustic corrosion liquid temperature is
90 DEG C~95 DEG C.
Passivating solution is >=30% hydrogen peroxide, >=85% phosphoric acid and ionized water by mass percentage in the step (3)
By 2:2:The mixed liquor of 4 mixing.
The predominant amount of glass dust is silica, zinc oxide, diboron trioxide in the step (4).
Application of the compound diode in the freewheeling circuit of midget relay.
Beneficial effects of the present invention：
(1) compound diode size of the invention is minimum, and pipe diameter is less than Φ 1.5mm, and tube length is less than 1.8mm,
Device has been provided simultaneously with transient voltage and has inhibited function and high voltage protective function, can promote the absorption speed of coil inverse electromotive force
Rate enormously simplifies the mounting means in coil protects circuit, in the chip manufacturing proces of transient voltage suppressor diode,
Making chip tool using Double side diffusion technique, there are two the identical PN junctions of breakdown voltage, are not needed in the process in subsequent die-filling freeze
Polarity processing is carried out to chip, greatly improves the production efficiency of device.
(2) chip separation is cut using green laser, and different from traditional ultrasonic cut and blast cutting technique, green light swashs
Light cutting splitting technique can accurately control the cut lengths of chip, and cutting accuracy is within 0.01mm, while green light can make core
Piece obtains minimum table top damaging layer, improves stability of the chip table after corrosion is cleaned；
(3) for the present invention using tungsten electrode as electrode material, which has acid and alkali resistance corrosion, the coefficient of expansion and silicon
It is approached with glass passivation layer, the characteristics of heat-sinking capability is strong, the instantaneous heat-sinking capability of device and resisting temperature impact capacity can be promoted, because
This in compound diode while package dimension reduces, can at -65 DEG C~200 DEG C steady operation, meet 500 times -65
DEG C~examination of 200 DEG C of temperature cycling tests, while transient voltage inhibits end to remain to realize the transient power of 150W, meet it is miniature after
The requirement of electric appliance.
Description of the drawings
Fig. 1 is a kind of highly reliable microminiature glassivation compound diode structure diagram；
1 is chip A；2 be chip B；3 be glass passivation layer；4 be electrode；5 be lead；6 be tube body；
Specific embodiment
It is limited technical scheme of the present invention is further, but is required with specific embodiment below in conjunction with the accompanying drawings
The range of protection is not only limited to made description.
Embodiment one
A kind of highly reliable microminiature glassivation compound diode, including tube body 6, lead 5 and protective layer 3；It is wherein described
Tube body 6 be made of two electrodes 4 and chip A1, chip B2；The chip A1 is connected to one end of electrode 4, the core
Piece B2 is connected to one end of another electrode, the chip A1 and the integrally welded composition tube bodies 1 of chip B2；The tube body 1
Periphery protection is wrapped up by protective layer 3；After 5 high temperature sintering of electrode 4 and lead, the contact conductor of an entirety is welded into, electricity
Under 6 high temperature of pole lead and tube body melting welding key and to get.
The chip A (1) is to have the function of the chip of high voltage protective, and production method is：Using n type single crystal silicon piece as material
Unidirectional PN junction is formed by single side depth-diffusion process, is made by way of electron beam evaporation or vacuum coating in die surfaces
Thickness is 15 μm of metal film layers, and tube core is cut into Φ 0.8mm using green laser after completing, and chip surface is carried out
Processing to get.
The chip B (2) is to have the function of the chip that transient voltage inhibits, and production method is：Use n type single crystal silicon
Piece by two-sided depth-diffusion process, forms two-way PN junction, passes through electron beam evaporation or the side of vacuum coating as substrate material
It is 10 μm~15 μm metal film layers that formula makes thickness in die surfaces, cuts into tube core using green laser after completing
Diameter of phi 0.6mm~Φ 0.8mm, chip surface is handled to get.
A kind of preparation method of highly reliable microminiature glassivation compound diode, includes the following steps：
(1), chip welds：Size is burnt for the tungsten electrode of Φ 0.8mm × 0.7 and the iron nickel wire lead high temperature of Φ 0.2mm
After knot, be welded into the contact conductor of an entirety, then by contact conductor and tube body at a high temperature of 800 DEG C melting welding key and；
(2), surface passivation, by step (1) melting welding key and after tube body by volume ratio be 68% nitric acid：95% hydrogen
Fluoric acid：98% sulfuric acid：99.9% glacial acetic acid：99.9% phosphoric acid=1：1.2：1：2：1 mix acid liquor acid corrosion 4 times,
Each 4min；6% 95 DEG C of potassium hydroxide solution caustic corrosion 2 times, each 4min are immersed again；Being finally immersed in mass percent is
99.9% hydrogen peroxide, 99.9% phosphoric acid and ionized water press 2:2:The mixed liquor of 4 mixing is passivated 5 times, each 4min；
(3), encapsulated moulding uniformly coats diboron trioxide glass powder paste on tube surfaces after passivation, is put into low temperature
Low temperature moulding 5h in forming furnace, setting heating rate 14 DEG C/min, heating-up time 65min, 660 DEG C of sintering temperature, constant temperature time
40min, 5 DEG C/min of rate of temperature fall.
The pipe diameter is Φ 1.4mm, and tube length is less than 1.7mm；The a diameter of Φ 0.8mm of the chip.
The compound diode is applied in the freewheeling circuit of midget relay, can at 200 DEG C steady operation, while wink
State voltage inhibition end remains to realize the transient power of 150W.
Embodiment two
A kind of highly reliable microminiature glassivation compound diode, including tube body 6, lead 5 and protective layer 3；It is wherein described
Tube body 6 be made of two electrodes 4 and chip A1, chip B2；The chip A1 is connected to one end of electrode 4, the core
Piece B2 is connected to one end of another electrode, the chip A1 and the integrally welded composition tube bodies 1 of chip B2；The tube body 1
Periphery protection is wrapped up by protective layer 3；After 5 high temperature sintering of electrode 4 and lead, the contact conductor of an entirety is welded into, electricity
Under 6 high temperature of pole lead and tube body melting welding key and to get.
The chip A (1) is to have the function of the chip of high voltage protective, and production method is：Using n type single crystal silicon piece as material
Unidirectional PN junction is formed by single side depth-diffusion process, is made by way of electron beam evaporation or vacuum coating in die surfaces
Thickness is 10 μm of metal film layers, tube core is cut into diameter of phi 0.6mm using green laser after completing, to chip surface
Handled to get.
The chip B (2) is to have the function of the chip that transient voltage inhibits, and production method is：Use n type single crystal silicon
Piece by two-sided depth-diffusion process, forms two-way PN junction, passes through electron beam evaporation or the side of vacuum coating as substrate material
It is 10 μm of metal film layers that formula makes thickness in die surfaces, and tube core is cut into diameter of phi using green laser after completing
0.6mm, chip surface is handled to get.
A kind of preparation method of highly reliable microminiature glassivation compound diode, includes the following steps：
(1), chip welds：Tungsten electrode and the iron nickel wire of a diameter of Φ 0.2mm that size is Φ 0.6mm × 0.7mm are drawn
After line high temperature sintering, be welded into the contact conductor of an entirety, then by contact conductor and tube body at a high temperature of 600 DEG C melting welding key
With；
(2), surface passivation, by step (1) melting welding key and after tube body by volume ratio be 65%~68% nitric acid：
40% hydrofluoric acid：95% sulfuric acid：99.5% glacial acetic acid：99.5% phosphoric acid=1：1.2：1：2：1 mix acid liquor acid
Corrosion 3 times, each 2min；3% 90 DEG C of potassium hydroxide solution caustic corrosion 2 times, each 2min are immersed again；It is finally immersed in quality hundred
Point than being 30% hydrogen peroxide, 85% phosphoric acid and ionized water by 2:2:The mixed liquor of 4 mixing is passivated 3 times, each 2min；
(3), encapsulated moulding, uniform coating silicon dioxide glass powder paste on tube surfaces after passivation, be put into low temperature into
Low temperature moulding 3h in type stove, setting heating rate 12 DEG C/min, heating-up time 45min, 620 DEG C of sintering temperature, constant temperature time
30min, 1 DEG C/min of rate of temperature fall.
The pipe diameter is Φ 0.6mm, tube length 0.8mm；The a diameter of Φ 0.6mm of the chip.
The compound diode is applied in the freewheeling circuit of midget relay, can at -65 DEG C steady operation, while wink
State voltage inhibition end remains to realize the transient power of 150W.
Embodiment three
A kind of highly reliable microminiature glassivation compound diode, including tube body 6, lead 5 and protective layer 3；It is wherein described
Tube body 6 be made of two electrodes 4 and chip A1, chip B2；The chip A1 is connected to one end of electrode 4, the core
Piece B2 is connected to one end of another electrode, the chip A1 and the integrally welded composition tube bodies 1 of chip B2；The tube body 1
Periphery protection is wrapped up by protective layer 3；After 5 high temperature sintering of electrode 4 and lead, the contact conductor of an entirety is welded into, electricity
Under 6 high temperature of pole lead and tube body melting welding key and to get.
The chip A (1) is to have the function of the chip of high voltage protective, and production method is：Using n type single crystal silicon piece as material
Unidirectional PN junction is formed by single side depth-diffusion process, is made by way of electron beam evaporation or vacuum coating in die surfaces
Thickness is 3 μm of metal film layers, tube core is cut into diameter of phi 0.7mm using green laser after completing, to chip surface
Handled to get.
The chip B (2) is to have the function of the chip that transient voltage inhibits, and production method is：Use n type single crystal silicon
Piece by two-sided depth-diffusion process, forms two-way PN junction, passes through electron beam evaporation or the side of vacuum coating as substrate material
It is 14 μm of metal film layers that formula makes thickness in die surfaces, and tube core is cut into diameter of phi using green laser after completing
0.7mm, chip surface is handled to get.
A kind of preparation method of highly reliable microminiature glassivation compound diode, includes the following steps：
(1), chip welds：Tungsten electrode and the iron nickel wire of a diameter of Φ 0.2mm that size is Φ 0.7mm × 0.7mm are drawn
After line high temperature sintering, the contact conductor of an entirety is welded into, then by contact conductor and tube body at a high temperature of 600~800 DEG C
Melting welding key and；
(2), surface passivation, by step (1) melting welding key and after tube body by volume ratio be 65%~68% nitric acid：
60% hydrofluoric acid：97% sulfuric acid：99.7% glacial acetic acid：99.6% phosphoric acid=12:9:12:6：6 mix acid liquor acid
Corrosion 3 times, each 4min；5% 92 DEG C of potassium hydroxide solution caustic corrosion 2 times, each 3min are immersed again；It is finally immersed in quality hundred
Point than being 50% hydrogen peroxide, 90% phosphoric acid and ionized water by 2:2:The mixed liquor of 5 mixing is passivated 4 times, each 3min；
(3), encapsulated moulding uniformly coats zinc oxide glass powder paste on tube surfaces after passivation, is put into low temperature moulding
Low temperature moulding 4h in stove, setting heating rate 13 DEG C/min, heating-up time 55min, 640 DEG C of sintering temperature, constant temperature time
35min, 3 DEG C/min of rate of temperature fall.
The pipe diameter is Φ 1.1mm, tube length 1.4mm；The a diameter of Φ 0.7mm of the chip.
The compound diode is applied in the freewheeling circuit of midget relay, can at 175 DEG C steady operation, while wink
State voltage inhibition end remains to realize the transient power of 150w.
Test example resisting temperature is impacted and clamp impact test research
Experiment one：Resisting temperature circulation ability is tested
Reference examples：A kind of patent " manufacture inhibited with transient voltage with the glassivation fly-wheel diode of rectification function
The diode of method " the preparation method manufacture, product size is Φ 1.8；
Test example：The compound diode that the embodiment of the present invention one manufactures；
Test method：Resisting temperature circulation ability is tested, ± 3 DEG C~200 DEG C ± 2 DEG C of -65 DEG C of temperature, is recycled 500 times, first low
High temperature after temperature, device is when high/low temperature is converted, transfer time≤1min, keeps 30min, and test result is shown in Table 1, table 2.
1 reference examples resisting temperature circulation ability of table is tested
2 test example resisting temperature circulation ability of table is tested
Experiment two：Anti- clamp impact capacity test
Reference examples：A kind of patent " manufacture inhibited with transient voltage with the glassivation fly-wheel diode of rectification function
The diode of method " the preparation method manufacture, product size is Φ 1.8mm；
Test example：The compound diode that the embodiment of the present invention one manufactures；
Test method：Anti- clamp impact capacity test：TAAt=25 DEG C ± 2 DEG C, tested according to transient power 150W,
Apply peak pulse current 4.1A (tr/tp:10 μ s/1000 μ s), each interpulse period be more than 1min, totally 100 times.
3 reference examples 150W of table clamps shock-testing result
4 test example 150W of table clamps shock-testing result
With reference to table 1, table 2, table 3 and table 4 it is found that the glassivation compound diode of patent of the present invention manufacture is compared to this hair
" a kind of manufacturing method inhibited with transient voltage with the glassivation fly-wheel diode of rectification function " institute that a person of good sense once applied
The diode of preparation is tested by resisting temperature circulation ability it is found that temperature of the present invention at -65 DEG C ± 3 DEG C~200 DEG C ± 2 DEG C
In the range of, after recycling 500 times, transient voltage inhibits the current range at end and high voltage protective end wider, illustrates that its resisting temperature is impacted
Ability is stronger；Shock-testing is clamped by 150W, product of the present invention passes through identical pulse work(under the premise of package dimension is smaller
Rate, diode current smaller of the present invention illustrate that the present invention can promote the instantaneous heat-sinking capability of device and resisting temperature impact capacity.Cause
This in compound diode while package dimension reduces, the present invention can at -65 DEG C~200 DEG C steady operation, meet 500
Secondary -65 DEG C~200 DEG C temperature cycling test examinations, while transient voltage inhibits end to remain to realize the transient power of 150W, meets
The requirement of midget relay.
Claims (10)
1. a kind of highly reliable microminiature glassivation compound diode, which is characterized in that including tube body (6), lead (5) and protection
Layer (3)；The wherein described tube body (6) is made of two electrodes (4) and chip A (1), chip B (2)；The chip A (1) is even
One end of electrode (4) is connected on, the chip B (2) is connected to one end of another electrode, the chip A (1) and chip B (2)
Integrally welded composition tube body (1)；Tube body (1) periphery is wrapped up by protective layer (3) to be protected；The electrode (4) and draw
After line (5) high temperature sintering, be welded into the contact conductor of an entirety, under contact conductor and tube body (6) high temperature melting welding key and to get.
2. microminiature glassivation compound diode as described in claim 1, which is characterized in that the pipe diameter is less than
Φ 1.5mm, tube length are less than 1.8mm；The a diameter of Φ 0.6mm~Φ 0.8mm of the chip.
3. microminiature glassivation compound diode as described in claim 1, which is characterized in that the electrode is tungsten electricity
Pole；The size of the tungsten electrode is Φ 0.6mm × 0.7~Φ 0.8mm × 0.7；The lead be iron nickel wire lead, the iron
A diameter of Φ 0.2mm of nickel wire lead.
4. microminiature glassivation compound diode as described in claim 1, which is characterized in that the chip A (1) be with
The chip of high voltage protective function, production method are：List is formed by single side depth-diffusion process using n type single crystal silicon piece as material
To PN junction, it is 10 μm~15 μm metallic films to make thickness in die surfaces by way of electron beam evaporation or vacuum coating
Layer, cuts into diameter of phi 0.6mm~Φ 0.8mm using green laser by tube core after completing, chip surface is handled,
To obtain the final product；
The chip B (2) is to have the function of the chip that transient voltage inhibits, and production method is：Made using n type single crystal silicon piece
For substrate material, by two-sided depth-diffusion process, form two-way PN junction, by way of electron beam evaporation or vacuum coating
It is 10 μm~15 μm metal film layers that die surfaces, which make thickness, and tube core is cut into diameter using green laser after completing
Φ 0.6mm~Φ 0.8mm, chip surface is handled to get.
5. a kind of preparation method of highly reliable microminiature glassivation compound diode, which is characterized in that include the following steps：
(1), chip welds：After tungsten electrode and iron nickel wire lead high temperature sintering, the contact conductor of an entirety is welded into, then will
Contact conductor and tube body at a high temperature of 600 DEG C~700 DEG C melting welding key and；
(2), tube body of step (1) the melting welding key with after is passed through acid corrosion 3~4 times, each 1min~4min by surface passivation；Alkali
Corrosion 2 times, each 1min~4min；Passivation 3~5 times, each 1min~4min；
(3), encapsulated moulding, uniform coating glass slurry on tube surfaces after passivation, be put into low temperature moulding stove low temperature into
Type 4h~6h, setting heating rate 10/min~15 DEG C/min, heating-up time 45min~65min, sintering temperature 620 DEG C~660
DEG C, constant temperature time 5min~40min, rate of temperature fall≤10 DEG C/min.
6. manufacturing method as claimed in claim 5, which is characterized in that acid corrosion liquid presses matter in acid corrosion in the step (3)
Amount percentage be analytically pure 65%~68% nitric acid, >=40% hydrofluoric acid, 95%~98% sulfuric acid, >=99.5%
Glacial acetic acid, >=99.5% phosphoric acid by volume 1:1.5:1:2：1 mixed solution.
7. manufacturing method as claimed in claim 5, which is characterized in that caustic corrosion liquid is 3% in caustic corrosion in the step (3)
~6% potassium hydroxide solution, caustic corrosion liquid temperature are 90 DEG C~95 DEG C.
8. manufacturing method as claimed in claim 5, which is characterized in that passivating solution is by mass percentage in the step (3)
>=30% hydrogen peroxide, >=85% phosphoric acid and ionized water press 2:2:The mixed liquor of 4 mixing.
9. manufacturing method as claimed in claim 5, which is characterized in that the predominant amount of glass dust is two in the step (4)
Silica, zinc oxide, diboron trioxide, the coefficient of expansion are 4.3 × 10-6/ DEG C~4.5 × 10-6/℃。
10. a kind of highly reliable microminiature glassivation compound diode, which is characterized in that the compound diode is in miniature relay
Application in the freewheeling circuit of device.
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| CN201711406703.4A CN108231909A (en) | 2017-12-22 | 2017-12-22 | A kind of highly reliable microminiature glassivation compound diode and its preparation method and application |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113410127A (en) * | 2021-06-18 | 2021-09-17 | 江苏晟驰微电子有限公司 | Cleaning manufacturing process before passivation of protection chip |
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