CN102664080B - Processing technology for glass encapsulated diode type thermistor - Google Patents
Processing technology for glass encapsulated diode type thermistor Download PDFInfo
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- CN102664080B CN102664080B CN201210126643.1A CN201210126643A CN102664080B CN 102664080 B CN102664080 B CN 102664080B CN 201210126643 A CN201210126643 A CN 201210126643A CN 102664080 B CN102664080 B CN 102664080B
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Abstract
The invention discloses a processing technology for a glass encapsulated diode type thermistor and belongs to the thermisotr processing field. The processing technology includes coating electrode materials on thermistor chips to produce chips with electrodes, using silver solders to weld the chips with the electrodes to lead wires to form the thermistor, and using a glass encapsulation process to encapsulate the thermistor to obtain the glass encapsulated diode type thermistor. According to the process technology for the glass encapsulated diode type thermistor, by means of welding, the silver solders are used for welding the thermistor chips and the lead wires into a whole, then the thermistor chips and the lead wires are subjected to the glass encapsulation to be closely connected, and even if external glass bodies are damaged, the connection strength of the thermistor chips and the lead wires is not influenced, so that a stable resistance value of the thermistor is guaranteed, and the service life of the thermistor is prolonged.
Description
Technical field
The present invention relates to thermistor manufacture field, particularly a kind of processing technology of diode type thermistor of glass packaging.
Background technology
Thermistor is the critical piece of temperature sensor thermometric, glass packaging diode type thermistor is a class conventional in thermistor, because its cost of manufacture is relatively low, at-50～200 ℃, all can normally use, therefore be widely used in high-temperature measurement field, such as: be applied in the high-temperature measurement of the electrical equipment such as microwave oven, electromagnetic oven, water heater, air-conditioning.
Glass packaging diode type thermistor in the market adopts following technique to be made mostly: make thermistor chip, again described chip is adopted to the encapsulation of glass packaging technique, during encapsulation, vitreum is tightly pressed in the lead-in wire of thermistor on chip when high-temperature shrinkage, forms glass packaging diode type thermistor.
In realizing process of the present invention, inventor finds that prior art at least exists following problem:
Its inside chip of axial glass packaged thermosensitive resistor is in the market connected by the extruding of outer glass body with lead-in wire, once outer glass body is impaired, pressure will reduce, cause lead-in wire and inside chip loose contact, the resistance of resistance just has deviation, even lost efficacy, greatly reduced the useful life of thermistor.
Summary of the invention
In order to solve the problem of prior art, the embodiment of the present invention provides a kind of processing technology of glass packaging diode type thermistor.Described technical scheme is as follows:
A processing technology for glass packaging diode type thermistor, described processing technology comprises:
Electrode coated material on thermistor chip, makes the chip with electrode;
Use silver solder that the described chips welding with electrode is upper to lead-in wire, form thermistor;
Adopt glass packaging technique to encapsulate described thermistor, obtain described glass packaging diode type thermistor;
Wherein, described use silver solder is upper to lead-in wire by the described chips welding with electrode, forms thermistor, specifically comprises:
By automatic impregnating equipment, to lead contact, flood silver solder;
Flooded and rear described lead-in wire and described chip with electrode have been put in location notch, described lead contact is contacted with the described chip with electrode;
By pressurization, described lead contact and described chip with electrode are compressed;
Adopt automatic welding machine to weld described lead contact and the described chip with electrode, form thermistor.
Further, described employing glass packaging technique encapsulates described thermistor, after obtaining described glass packaging diode type thermistor, also comprises:
Give vitreum parcel silicone protective layer and/or the epoxy resin protective layer of described glass packaging diode type thermistor;
After having wrapped up, need to be by the machine-shaping of described glass packaging diode type thermistor by using.
Described on thermistor chip electrode coated material, make the chip with electrode, specifically comprise:
To after the dilution of silver slurry, be printed on described thermistor chip;
Described thermistor chip after printing is put into sintering furnace high temperature sintering, form the chip with electrode.
Described vitreum parcel silicone protective layer and/or the epoxy resin protective layer of giving described glass packaging diode type thermistor, specifically comprises:
The vitreum dipping silica gel of giving described glass packaging diode type thermistor by impregnating equipment, after dipping, described diode type thermistor enters baking disk, toasts and within 20 minutes, make the silica gel of dipping solidify on described baking disk at 100 ℃; Or/and
By impregnating equipment, give the vitreum epoxy resin-impregnated of described glass packaging diode type thermistor, after dipping, described diode type thermistor enters baking disk, toasts the epoxy resin cure that makes dipping for 3 hours on described baking disk at 105 ℃.
Described employing automatic welding machine welds described lead contact and the described chip with electrode, forms thermistor, specifically comprises:
Automatic welding machine is carried out to parameter setting, be specially: air pressure is set to 5 ± 0.5Kgf/cm
2, warm area temperature setting is set to 690 ℃, 1st district, 750 ℃, 2 district 710℃Ji 3rd district, and preheat temperature and time are set to preheating 20S at 100 ℃;
After setting completes, the described automatic welding machine of use welds described lead contact and the described chip with electrode, forms thermistor.
Further, after after described setting completes, the described automatic welding machine of use welds described lead contact and the described core with electrode, also comprise:
Welded and rear the described thermistor obtaining has been carried out to ultrasonic cleaning, cleaning fluid is butanone;
After cleaning, the described described thermistor obtaining is put into baking box, at 100 ℃, toast 50 minutes.
The beneficial effect that the technical scheme that the embodiment of the present invention provides is brought is:
The mode of welding by employing is integral thermistor chip and wire bonds with silver solder, then it is carried out to glass packaging, thermistor chip is closely connected with lead-in wire, even if outer glass body is impaired, also can not affect the bonding strength of thermistor chip and lead-in wire, guaranteed that thermistor has stable resistance, has extended its useful life.
Accompanying drawing explanation
In order to be illustrated more clearly in the technical scheme in the embodiment of the present invention, below the accompanying drawing of required use during embodiment is described is briefly described, apparently, accompanying drawing in the following describes is only some embodiments of the present invention, for those of ordinary skills, do not paying under the prerequisite of creative work, can also obtain according to these accompanying drawings other accompanying drawing.
Fig. 1 is that the automatic impregnating equipment that the embodiment of the present invention provides floods the schematic diagram of silver solder operation to lead contact;
Fig. 2 be the embodiment of the present invention provide by pressurization, make lead contact and the schematic diagram compressing with the chip of electrode;
The schematic diagram of the glass packaging diode type thermistor of Fig. 3 is the parcel that provides of embodiment of the present invention silicone protective layer;
The schematic diagram of the glass packaging diode type thermistor of Fig. 4 silica gel that has been the parcel that provides of the embodiment of the present invention and epoxy resin protective layer;
Fig. 5 is the thermistor schematic diagram after the moulding that provides of the embodiment of the present invention.
Wherein:
1, lead contact, 2, with the chip of electrode, 3, location notch, 4, air pressure inlet and outlet connectors, 5, fixed resistance slide block.
Embodiment
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing, embodiment of the present invention is described further in detail.
Material therefor and instrument in various embodiments of the present invention:
Silver slurry (comprise silver slurry and silver slurry diluent complete sets of products, product type is SR-402H, buys from KOJUNDO CHEMICAL LABORATORY CO. LTD(Japan high-purity chemical research institute); Silver solder is BAg
50cuZn; Silica gel model is KR-251, buys from Japan XINYUE; Epoxy resin (comprise host and curing agent, wherein host model is K-8908A, and curing agent model is K-8908B, and mass ratio when host and curing agent are used during use is 100:25), buys the company from Japanese SOMAR.
The automatic impregnating unit type of dipping silver solder is 2AS-250NA-W, buys from Korea S TWO-A system company; The impregnating equipment model of dipping silica gel or epoxy resin is 2AS-EPCN-4800-FC, buys from Korea S TWO-A system company; Automatic welding machine is bought from Korea S TWO-A system company.
Embodiment mono-
The embodiment of the present invention provides a kind of processing technology of glass packaging diode type thermistor, and described processing technology comprises:
Step 1: electrode coated slurry on thermistor chip, make the chip with electrode;
Thermistor chip can directly be bought, also can be according to the making that needs to resistance and B value, and electrode slurry can be selected the conductor pastes such as silver slurry, platinum slurry, and coating processes can adopt manual application or silk screen printing.In embodiments of the present invention, Ceramics sheet, as thermistor chip, selects silver paste as electrode slurry, and concrete operations are as follows:
Silver slurry and silver are starched to diluent by weight mixing and stir for 100:5;
The silver slurry having diluted is printed on potsherd at twice, after the first impression, potsherd is arranged on stainless (steel) wire and at 125 ℃, toasts 10-15 minute until dry, then carry out the second impression, after being completed for printing, be arranged on stainless (steel) wire and at 125 ℃, toast 10-15 minute until dry;
After typography completes, thermistor chip is placed in sintering furnace to sintering at 650 ℃, forms the chip with electrode.
Silver slurry has good on-state rate, ohm contact performance, and can increase greatly the adhesive force of chip, easily welds, and is conducive to the carrying out of follow-up welding procedure.
Step 2: use silver solder that the described chips welding with electrode is upper to lead-in wire, form thermistor, concrete operations are as follows:
Referring to Fig. 1, by automatic impregnating equipment, to lead contact, flood silver solder, the consumption of silver solder, so that automatic welding machine is welded as suitablely, is adjusted the consumption of silver solder by adjusting the rotating speed of automatic impregnating equipment, the rotating speed of automatic impregnating equipment is 234RPM in the present embodiment;
Referring to Fig. 2, flooded and described lead-in wire and with the chip 2 of electrode, put in location notch 3 afterwards, lead contact 1 is contacted with the chip 2 with electrode;
By pressurization, lead contact 1 and the chip 2 with electrode are compressed;
Thereby by increase air pressure from air pressure inlet and outlet connectors 4, drive fixed resistance slide blocks 5 to move lead contact 1 is pressed onto the chip 2 with electrode in the present embodiment, lead contact 1 and chip 2 with electrode are enough closely when guaranteeing that follow-up welding procedure is carried out;
Adopt automatic welding machine welding lead contact 1 and with the chip 2 of electrode, form thermistor.
The parameter setting of automatic welding machine is specially in embodiments of the present invention: by air pressure regulator air pressure, be set to 5 ± 0.5Kgf/cm
2, warm area temperature setting is set to 690 ℃, 1st district, 750 ℃, 2 district 710℃Ji 3rd district, and preheating is set to preheating 20S at 100 ℃; After setting completes, with described automatic welding machine, weld described lead contact and the described chip with electrode, form thermistor; Welded and rear the described thermistor obtaining has been carried out to ultrasonic cleaning to remove impurity, cleaning fluid is butanone; After cleaning, described thermistor is put into baking box, toast 50 minutes at 100 ℃, welding procedure completes.
Silver solder has good wetability and the ability of filling up gap, and intensity is high, plasticity is good, conductivity and excellent corrosion resistance, and heatproof can reach 680 ℃, has ensured that resistance is used and can cause losing efficacy because of solder fusing at high-temperature field.
Step 3: adopt glass packaging technique to encapsulate described thermistor, obtain described glass packaging diode type thermistor;
In embodiments of the present invention, adopt glass tube sealed in unit to seal glass tube to described thermistor, after sealing, the described thermistor with glass tube is placed at 660 ℃ and is toasted 5 hours, make glass tube collapsed seal wrap up described thermistor, form described glass packaging diode type thermistor.
The mode that the embodiment of the present invention is welded by employing is integral thermistor chip and wire bonds with silver solder, then it is carried out to glass packaging, thermistor chip is closely connected with lead-in wire, even if outer glass body is impaired, also can not affect the bonding strength of thermistor chip and lead-in wire, guaranteed that thermistor has stable resistance, has extended its useful life.
Embodiment bis-
The embodiment of the present invention provides a kind of processing technology of glass packaging diode type thermistor, and described processing technology comprises:
The step 1-3 identical with embodiment mono-;
Step 4: the vitreum parcel silicone protective layer of giving described glass packaging diode type thermistor;
Referring to Fig. 3; in embodiments of the present invention; by the impregnating equipment of silica gel being housed to the vitreum dipping silica gel of described diode type thermistor; after having flooded, the diode type thermistor that is impregnated with silica gel is put into ageing oven and at 100 ℃, toasted 20min silica gel is solidified, form the diode type thermistor with silicone protective layer.The consumption of silica gel can be determined according to the size of resistance, by changing the speed of impregnating equipment conveyer belt, controls silica gel consumption, and the speed of conveyer belt is 830m/h in the present embodiment.
Step 5: after having wrapped up, need to be by the machine-shaping of described glass packaging diode type thermistor by using.
According to using needs, with forming machine, the diode type thermistor with silicone protective layer is processed into the shape that application needs, the example shape for temperature sensor as shown in Figure 5.
The embodiment of the present invention is by wrapping up silicone protective layer to resistance; resistance body is played to good water proof and dust proof effect; steam or impurity have been overcome because vitreum poor sealing enters the resistance Problem of Failure that resistance body causes; simultaneously; the shock-absorbing capacity of silica gel can avoid resistance in processing or when equipment is used; owing to falling, touch or the chip that the effect of mechanical shock iso-stress causes damage the useful life of having improved resistance.
Embodiment tri-
The embodiment of the present invention provides a kind of processing technology of glass packaging diode type thermistor, and described processing technology comprises:
The step 1-3 identical with embodiment mono-;
Step 4: the vitreum parcel epoxy resin protective layer of giving described glass packaging diode type thermistor;
Referring to Fig. 4; in embodiments of the present invention; by the impregnating equipment of epoxy resin being housed to the vitreum epoxy resin-impregnated of described diode type thermistor; after having flooded, the diode type thermistor that is impregnated with epoxy resin is put into barn and at 105 ℃, toasted and within 3 hours, make epoxy resin cure, form the diode type thermistor with epoxy resin protective layer.The consumption of epoxy resin can be determined according to the size of resistance, by changing the speed of the automatic delivering belt of impregnating equipment, controls content of epoxy resin, and the speed of conveyer belt is 830m/h in the present embodiment.
Step 5: after having wrapped up, need to be by the machine-shaping of described glass packaging diode type thermistor by using.
According to using needs, with forming machine, the diode type thermistor with epoxy resin protective layer is processed into the shape that application needs, the example shape for temperature sensor as shown in Figure 5.
The embodiment of the present invention, by resistance parcel epoxy resin protective layer, plays good water proof and dust proof effect to resistance body, has overcome steam or impurity because vitreum poor sealing enters the resistance Problem of Failure that resistance body causes; Epoxy resin has stronger adhesiveness, not only can be for resistance body opposing part external impacts, and the impaired problem of vitreum seal failure, inside chip causing due to lead deformation can prevent resistance moulding time, improved rate of finished products, saved production cost.
Embodiment tetra-
The embodiment of the present invention provides a kind of processing technology of glass packaging diode type thermistor, and described processing technology comprises:
The step 1-4 identical with embodiment bis-;
Step 5: the vitreum parcel epoxy resin protective layer of giving described glass packaging diode type thermistor;
Referring to Fig. 4; in embodiments of the present invention; by the impregnating equipment of epoxy resin being housed to the vitreum epoxy resin-impregnated of described diode type thermistor; after having flooded, the diode type thermistor that is impregnated with epoxy resin is put into barn and at 105 ℃, toasted and within 3 hours, make epoxy resin cure, form the diode type thermistor with silica gel and epoxy resin protective layer.
Step 6: after having wrapped up, need to be by the machine-shaping of described glass packaging diode type thermistor by using.
According to using needs, with forming machine, the diode type thermistor with silica gel and epoxy resin protective layer is processed into the shape that application needs, the example shape for temperature sensor as shown in Figure 5.
The embodiment of the present invention, by resistance parcel silica gel and epoxy resin protective layer, plays good water proof and dust proof effect to resistance body, has overcome steam or impurity because vitreum poor sealing enters the resistance Problem of Failure that resistance body causes; The shock-absorbing capacity of silica gel can avoid resistance in processing or when equipment is used, and touches or the chip that the effect of mechanical shock iso-stress causes damage the useful life of having improved resistance owing to falling; Epoxy resin has stronger adhesiveness, not only can be for resistance body opposing part external impacts, and the impaired problem of vitreum seal failure, inside chip causing due to lead-in wire break-in can prevent resistance moulding time, improved rate of finished products, saved production cost.
The foregoing is only preferred embodiment of the present invention, in order to limit the present invention, within the spirit and principles in the present invention not all, any modification of doing, be equal to replacement, improvement etc., within all should being included in protection scope of the present invention.
Claims (6)
1. a processing technology for glass packaging diode type thermistor, is characterized in that, described processing technology comprises:
Electrode coated material on thermistor chip, makes the chip with electrode;
Use silver solder that the described chips welding with electrode is upper to lead-in wire, form thermistor;
Adopt glass packaging technique to encapsulate described thermistor, obtain described glass packaging diode type thermistor;
Wherein, described use silver solder is upper to lead-in wire by the described chips welding with electrode, forms thermistor, specifically comprises:
By automatic impregnating equipment, to lead contact, flood silver solder;
Flooded and rear described lead-in wire and described chip with electrode have been put in location notch, described lead contact is contacted with the described chip with electrode;
By pressurization, described lead contact and described chip with electrode are compressed;
Adopt automatic welding machine to weld described lead contact and the described chip with electrode, form thermistor.
2. the processing technology of glass packaging diode type thermistor according to claim 1, is characterized in that, described employing glass packaging technique encapsulates described thermistor, after obtaining described glass packaging diode type thermistor, also comprises:
Give vitreum parcel silicone protective layer and/or the epoxy resin protective layer of described glass packaging diode type thermistor;
After having wrapped up, need to be by the machine-shaping of described glass packaging diode type thermistor by using.
3. the processing technology of glass packaging diode type thermistor according to claim 1, is characterized in that, described on thermistor chip electrode coated material, make the chip with electrode, specifically comprise:
To after the dilution of silver slurry, be printed on described thermistor chip;
Described thermistor chip after printing is put into sintering furnace high temperature sintering, form the chip with electrode.
4. the processing technology of glass packaging diode type thermistor according to claim 2, is characterized in that, described vitreum parcel silicone protective layer and/or the epoxy resin protective layer of giving described glass packaging diode type thermistor, specifically comprises:
The vitreum dipping silica gel of giving described glass packaging diode type thermistor by impregnating equipment, after dipping, described diode type thermistor enters baking disk, toasts and within 20 minutes, make the silica gel of dipping solidify on described baking disk at 100 ℃; Or/and
By impregnating equipment, give the vitreum epoxy resin-impregnated of described glass packaging diode type thermistor, after dipping, described diode type thermistor enters baking disk, toasts the epoxy resin cure that makes dipping for 3 hours on described baking disk at 105 ℃.
5. the processing technology of glass packaging diode type thermistor according to claim 1, is characterized in that, described employing automatic welding machine welds described lead contact and the described chip with electrode, forms thermistor, specifically comprises:
Automatic welding machine is carried out to parameter setting, be specially: air pressure is set to 5 ± 0.5Kgf/cm
2, warm area temperature setting is set to 690 ℃, 1st district, 750 ℃, 2 district 710℃Ji 3rd district, and preheat temperature and time are set to preheating 20S at 100 ℃;
After setting completes, the described automatic welding machine of use welds described lead contact and the described chip with electrode, forms thermistor.
6. the processing technology of the glass packaging diode type thermistor of stating according to claim 5, is characterized in that, after after described setting completes, the described automatic welding machine of use welds described lead contact and the described core with electrode, also comprises:
Welded and rear the described thermistor obtaining has been carried out to ultrasonic cleaning, cleaning fluid is butanone;
After cleaning, the described described thermistor obtaining is put into baking box, at 100 ℃, toast 50 minutes.
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| CN201210126643.1A CN102664080B (en) | 2012-04-26 | 2012-04-26 | Processing technology for glass encapsulated diode type thermistor |
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| CN102664080B true CN102664080B (en) | 2014-04-16 |
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| CN103736688B (en) * | 2013-12-30 | 2015-07-08 | 孝感华工高理电子有限公司 | Method for cleaning glass sealed diode structure NTC thermistor |
| CN110631728B (en) * | 2019-06-26 | 2020-11-10 | 兴勤（宜昌）电子有限公司 | Automatic welding and packaging equipment for glass packaging temperature sensor |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1905086A (en) * | 2005-07-25 | 2007-01-31 | 株式会社日立制作所 | Temperature-sensing device |
| CN201036097Y (en) * | 2007-04-02 | 2008-03-12 | 莫海声 | Single end leading-out wire glass enveloped negative temperature coefficient thermistor |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JP2010073731A (en) * | 2008-09-16 | 2010-04-02 | Murata Mfg Co Ltd | Electronic component with lead wire |
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Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1905086A (en) * | 2005-07-25 | 2007-01-31 | 株式会社日立制作所 | Temperature-sensing device |
| CN201036097Y (en) * | 2007-04-02 | 2008-03-12 | 莫海声 | Single end leading-out wire glass enveloped negative temperature coefficient thermistor |
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