CN102664080A - Processing technology for glass encapsulated diode type thermistor - Google Patents
Processing technology for glass encapsulated diode type thermistor Download PDFInfo
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- CN102664080A CN102664080A CN2012101266431A CN201210126643A CN102664080A CN 102664080 A CN102664080 A CN 102664080A CN 2012101266431 A CN2012101266431 A CN 2012101266431A CN 201210126643 A CN201210126643 A CN 201210126643A CN 102664080 A CN102664080 A CN 102664080A
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Abstract
The invention discloses a processing technology for a glass encapsulated diode type thermistor and belongs to the thermisotr processing field. The processing technology includes coating electrode materials on thermistor chips to produce chips with electrodes, using silver solders to weld the chips with the electrodes to lead wires to form the thermistor, and using a glass encapsulation process to encapsulate the thermistor to obtain the glass encapsulated diode type thermistor. According to the process technology for the glass encapsulated diode type thermistor, by means of welding, the silver solders are used for welding the thermistor chips and the lead wires into a whole, then the thermistor chips and the lead wires are subjected to the glass encapsulation to be closely connected, and even if external glass bodies are damaged, the connection strength of the thermistor chips and the lead wires is not influenced, so that a stable resistance value of the thermistor is guaranteed, and the service life of the thermistor is prolonged.
Description
Technical field
The present invention relates to the thermistor manufacture field, particularly a kind of processing technology of diode-type thermistor of glass packaging.
Background technology
Thermistor is the critical piece of temperature sensor thermometric; Glass packaging diode-type thermistor is one type commonly used in the thermistor; Because its cost of manufacture is relatively low; Under-50～200 ℃, all can normally use, therefore be widely used in high temperature thermometric field, for example: be applied in the high temperature thermometric of electrical equipment such as microwave oven, electromagnetic oven, water heater, air-conditioning.
Glass packaging diode-type thermistor in the market adopts following technology to be made mostly: make thermistor chip; Again said chip is adopted the encapsulation of glass packaging technology; Vitreum tightly is pressed in the lead-in wire of thermistor on the chip when high-temperature shrinkage during encapsulation, forms glass packaging diode-type thermistor.
In realizing process of the present invention, the inventor finds that there is following problem at least in prior art:
Its inside chip of axial glass packaged thermosensitive resistor in the market is connected through the extruding of outer glass body with lead-in wire; In case the outer glass body is impaired; Pressure will reduce, and causes lead-in wire and inside chip loose contact, and the resistance of resistance just has deviation; Even lost efficacy, significantly reduced the useful life of thermistor.
Summary of the invention
In order to solve prior art problems, the embodiment of the invention provides a kind of processing technology of glass packaging diode-type thermistor.Said technical scheme is following:
A kind of processing technology of glass packaging diode-type thermistor, said processing technology comprises:
Electrode coated material on thermistor chip is processed the chip that has electrode;
The use silver solder to lead-in wire, forms thermistor with the said chips welding that has electrode;
Adopt glass packaging technology that said thermistor is encapsulated, get said glass packaging diode-type thermistor.
Further, said employing glass packaging technology encapsulates said thermistor, gets after the said glass packaging diode-type thermistor, also comprises:
Give the silica gel protected layer of vitreum parcel and/or the epoxy resin protective layer of said glass packaging diode-type thermistor;
After having wrapped up, need be by use with the machine-shaping of said glass packaging diode-type thermistor.
Said on thermistor chip electrode coated material, process the chip that has electrode, specifically comprise:
With being printed on the said thermistor chip after the dilution of silver slurry;
Said thermistor chip after the printing is put into the sintering furnace high temperature sintering, form the chip that has electrode.
Said use silver solder to lead-in wire, forms thermistor with the said chips welding that has electrode, specifically comprises:
Flood silver solder through automatic impregnating equipment to lead contact;
Dipping is put said lead-in wire and the said chip that has electrode in the location notch after accomplishing, and said lead contact is contacted with the said chip that has electrode;
Through pressurization said lead contact and the said chip that has electrode are compressed;
Adopt automatic welding machine to weld said lead contact and the said chip that has electrode, form thermistor.
Said silica gel protected layer of vitreum parcel and/or the epoxy resin protective layer of giving said glass packaging diode-type thermistor specifically comprises:
Flood silica gel for the vitreum of said glass packaging diode-type thermistor through impregnating equipment, the said diode-type thermistor in dipping back gets into the baking disk, and baking made the silica gel of dipping solidify in 20 minutes under 100 ℃ on said baking disk; Or/and
Through the vitreum epoxy resin-impregnated that impregnating equipment is given said glass packaging diode-type thermistor, flood the said diode-type thermistor in back and get into the baking disk, on said baking disk, toast the epoxy resin cure that made dipping in 3 hours down at 105 ℃.
Said employing automatic welding machine welds said lead contact and the said chip that has electrode, forms thermistor, specifically comprises:
Automatic welding machine is carried out the parameter setting, be specially: air pressure is set to 5 ± 0.5Kgf/cm
2, the warm area temperature is set to 750 ℃ in 690 ℃ in 1 district, 710 ℃ in 2 districts and 3 districts, and preheat temperature and time are set to 100 ℃ of following preheating 20S;
Weld said lead contact and the said chip that has electrode with said automatic welding machine after completion is set, form thermistor.
Further, the said setting welded after the core that said lead contact and said has electrode with said automatic welding machine after accomplishing, and also comprises:
Welding is carried out ultrasonic cleaning to the said thermistor that obtains after accomplishing, and cleaning fluid is a butanone;
After the cleaning the said said thermistor that obtains is put into baking box, toasted 50 minutes down at 100 ℃.
The beneficial effect that the technical scheme that the embodiment of the invention provides is brought is:
Mode through adopting welding is integral thermistor chip and wire bonds with silver solder; Then it is carried out glass packaging; Thermistor chip closely is connected with lead-in wire,, also can influence the bonding strength of thermistor chip and lead-in wire even the outer glass body is impaired; Guaranteed that thermistor has stable resistance, has prolonged its useful life.
Description of drawings
In order to be illustrated more clearly in the technical scheme in the embodiment of the invention; The accompanying drawing of required use is done to introduce simply in will describing embodiment below; Obviously, the accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skills; Under the prerequisite of not paying creative work, can also obtain other accompanying drawing according to these accompanying drawings.
Fig. 1 is that the automatic impregnating equipment that the embodiment of the invention provides floods the sketch map of silver solder operation to lead contact;
Fig. 2 be the embodiment of the invention provide pass through the sketch map that pressurization compresses lead contact and the chip that has an electrode;
The sketch map of the glass packaging diode-type thermistor of Fig. 3 is the parcel that provides of the embodiment of the invention silica gel protected layer;
The sketch map of the glass packaging diode-type thermistor of Fig. 4 silica gel that has been the parcel that provides of the embodiment of the invention and epoxy resin protective layer;
Fig. 5 is the thermistor sketch map after the moulding that provides of the embodiment of the invention.
Wherein:
1, lead contact, 2, have a chip of electrode, 3, location notch, 4, the air pressure inlet and outlet connectors, 5, the fixed resistance slide block.
Embodiment
For making the object of the invention, technical scheme and advantage clearer, will combine accompanying drawing that embodiment of the present invention is done to describe in detail further below.
Material therefor and instrument in the various embodiments of the present invention:
(comprise silver slurry and silver slurry diluent complete sets of products, product type is SR-402H, buys from KOJUNDO CHEMICAL LABORATORY CO. LTD (Japanese high-purity chemical research institute) for silver slurry; Silver solder is BAg
50CuZn; The silica gel model is KR-251, buys from Japan XINYUE; Epoxy resin (comprise host and curing agent, wherein the host model is K-8908A, and the curing agent model is K-8908B, and the mass ratio when host and curing agent use during use is 100: 25) is bought the company from Japanese SOMAR.
The automatic impregnating unit type of dipping silver solder is 2AS-250NA-W, buys from Korea S TWO-A system company; The impregnating equipment model of dipping silica gel or epoxy resin is 2AS-EPCN-4800-FC, buys from Korea S TWO-A system company; Automatic welding machine is bought from Korea S TWO-A system company.
Embodiment one
The embodiment of the invention provides a kind of processing technology of glass packaging diode-type thermistor, and said processing technology comprises:
Step 1: electrode coated slurry on thermistor chip, process the chip that has electrode;
Thermistor chip can directly be bought, and also can make according to the needs to resistance and B value, and electrode slurry can be selected conductor pastes such as silver slurry, platinum slurry for use, and coating processes can adopt manual application or silk screen printing.In embodiments of the present invention, select for use potsherd as thermistor chip, select for use silver paste as electrode slurry, concrete operations are following:
Silver slurry and silver are starched diluent by weight being to mix and stir at 100: 5;
The silver slurry that dilution is good is printed on the potsherd at twice; After the first impression with potsherd be arranged on the stainless (steel) wire 125 ℃ down baking 10-15 minute until oven dry; Carry out the second impression then, be arranged in after being completed for printing on the stainless (steel) wire and toast 10-15 minute down until oven dry at 125 ℃;
After typography is accomplished, thermistor chip is placed in the sintering furnace at 650 ℃ of following sintering, forms the chip that has electrode.
The silver slurry has good on-state rate, ohm contact performance, and can increase the adhesive force of chip greatly, welds easily, helps the carrying out of later welded technology.
Step 2: the use silver solder to lead-in wire, forms thermistor with the said chips welding that has electrode, and concrete operations are following:
Referring to Fig. 1; Flood silver solder through automatic impregnating equipment to lead contact; The consumption of silver solder is adjusted the consumption of silver solder so that automatic welding machine is welded as suitablely through the rotating speed of adjustment automatic impregnating equipment, and the rotating speed of automatic impregnating equipment is 234RPM in the present embodiment;
Referring to Fig. 2, after accomplishing, puts said lead-in wire and the chip 2 that has an electrode in the location notch 3 dipping, and lead contact 1 is contacted with the chip that has electrode 2;
Through pressurization lead contact 1 and the chip 2 that has electrode are compressed;
Thereby drive fixed resistance slide blocks 5 and move lead contact 1 is pressed onto on the chip 2 that has electrode through increase air pressure from air pressure inlet and outlet connectors 4 in the present embodiment, lead contact 1 and the chip 2 that has electrode are enough closely when guaranteeing that later welded technology is carried out;
Adopt automatic welding machine welding lead contact 1 and have the chip 2 of electrode, form thermistor.
The parameter setting of automatic welding machine is specially in embodiments of the present invention: be set to 5 ± 0.5Kgf/cm through air pressure regulator air pressure
2, the warm area temperature is set to 750 ℃ in 690 ℃ in 1 district, 710 ℃ in 2 districts and 3 districts, and preheating is set to 100 ℃ of following preheating 20S; After completion is set, weld said lead contact and the said chip that has electrode, form thermistor with said automatic welding machine; After welding is accomplished the said thermistor that obtains is carried out ultrasonic cleaning to remove impurity, cleaning fluid is a butanone; After the cleaning said thermistor is put into baking box, toasted 50 minutes down at 100 ℃, welding procedure is accomplished.
Silver solder has the good wetability and the ability of filling up the gap, and intensity is high, plasticity is good, conductivity and corrosion resistance are good, and heatproof can reach 680 ℃, has ensured that resistance uses in the high temperature field can cause losing efficacy because of solder fusing.
Step 3: adopt glass packaging technology that said thermistor is encapsulated, get said glass packaging diode-type thermistor;
In embodiments of the present invention; Adopt the glass tube sealed in unit to seal glass tube for said thermistor; The said thermistor that will have glass tube after sealing is placed on 660 ℃ and toasted 5 hours down; Make the glass tube collapsed seal wrap up said thermistor, form said glass packaging diode-type thermistor.
The embodiment of the invention is integral thermistor chip and wire bonds with silver solder through the mode that adopts welding; Then it is carried out glass packaging; Thermistor chip closely is connected with lead-in wire,, also can influence the bonding strength of thermistor chip and lead-in wire even the outer glass body is impaired; Guaranteed that thermistor has stable resistance, has prolonged its useful life.
Embodiment two
The embodiment of the invention provides a kind of processing technology of glass packaging diode-type thermistor, and said processing technology comprises:
The step 1-3 identical with embodiment one;
Step 4: the silica gel protected layer of vitreum parcel of giving said glass packaging diode-type thermistor;
Referring to Fig. 3; In embodiments of the present invention; Give the vitreum dipping silica gel of said diode-type thermistor through the impregnating equipment that silica gel is housed; The diode-type thermistor that will be impregnated with silica gel after dipping is accomplished put into ageing oven 100 ℃ down baking 20min silica gel is solidified, form and have silica gel protected layer diode-type thermistor.The consumption of silica gel can confirm that control the silica gel consumption through the speed that changes the impregnating equipment conveyer belt, the speed of conveyer belt is 830m/h in the present embodiment according to the size of resistance.
Step 5: after having wrapped up, need be by use with the machine-shaping of said glass packaging diode-type thermistor.
According to the use needs, the diode-type thermistor that will have a silica gel protected layer with make-up machine is processed into the shape of application needs, the shape that is used for temperature sensor for example shown in Figure 5.
The embodiment of the invention is through wrapping up silica gel protected layer to resistance; The resistance body is played good water proof and dust proof effect; Overcome steam or impurity because the vitreum poor sealing gets into the resistance Problem of Failure that the resistance body causes, simultaneously, the shock-absorbing capacity of silica gel can avoid resistance in processing or when equipment uses; Bump or the chip that the effect of mechanical shock iso-stress causes damage the useful life of having improved resistance owing to fall.
Embodiment three
The embodiment of the invention provides a kind of processing technology of glass packaging diode-type thermistor, and said processing technology comprises:
The step 1-3 identical with embodiment one;
Step 4: the vitreum parcel epoxy resin protective layer of giving said glass packaging diode-type thermistor;
Referring to Fig. 4; In embodiments of the present invention; Give the vitreum epoxy resin-impregnated of said diode-type thermistor through the impregnating equipment that epoxy resin is housed; The diode-type thermistor that will be impregnated with epoxy resin after dipping is accomplished put into barn 105 ℃ down baking made epoxy resin cure in 3 hours, formation has the diode-type thermistor of epoxy resin protective layer.The consumption of epoxy resin can confirm according to the size of resistance, and the speed of the automatic transport band through changing impregnating equipment is controlled content of epoxy resin, and the speed of conveyer belt is 830m/h in the present embodiment.
Step 5: after having wrapped up, need be by use with the machine-shaping of said glass packaging diode-type thermistor.
According to the use needs, the diode-type thermistor that will have an epoxy resin protective layer with make-up machine is processed into the shape of application needs, the shape that is used for temperature sensor for example shown in Figure 5.
The embodiment of the invention plays good water proof and dust proof effect through to resistance parcel epoxy resin protective layer to the resistance body, has overcome steam or impurity because the vitreum poor sealing gets into the resistance Problem of Failure that the resistance body causes; Epoxy resin has stronger adhesiveness; Not only can be for resistance body opposing part external impacts; And can prevent the resistance moulding time because the impaired problem of vitreum seal failure, inside chip that lead deformation causes has improved rate of finished products, practiced thrift production cost.
Embodiment four
The embodiment of the invention provides a kind of processing technology of glass packaging diode-type thermistor, and said processing technology comprises:
The step 1-4 identical with embodiment two;
Step 5: the vitreum parcel epoxy resin protective layer of giving said glass packaging diode-type thermistor;
Referring to Fig. 4; In embodiments of the present invention; Give the vitreum epoxy resin-impregnated of said diode-type thermistor through the impregnating equipment that epoxy resin is housed; The diode-type thermistor that will be impregnated with epoxy resin after dipping is accomplished put into barn 105 ℃ down baking made epoxy resin cure in 3 hours, formation has the diode-type thermistor of silica gel and epoxy resin protective layer.
Step 6: after having wrapped up, need be by use with the machine-shaping of said glass packaging diode-type thermistor.
According to the use needs, the diode-type thermistor that will have silica gel and an epoxy resin protective layer with make-up machine is processed into the shape of application needs, the shape that is used for temperature sensor for example shown in Figure 5.
The embodiment of the invention plays good water proof and dust proof effect through to resistance parcel silica gel and epoxy resin protective layer to the resistance body, has overcome steam or impurity because the vitreum poor sealing gets into the resistance Problem of Failure that the resistance body causes; The shock-absorbing capacity of silica gel can avoid resistance in processing or when equipment uses, and bumps or the chip that the effect of mechanical shock iso-stress causes damage the useful life of having improved resistance owing to fall; Epoxy resin has stronger adhesiveness; Not only can be for resistance body opposing part external impacts; And can prevent the resistance moulding time because the impaired problem of vitreum seal failure, inside chip that the lead-in wire break-in causes has improved rate of finished products, practiced thrift production cost.
The above is merely preferred embodiment of the present invention, and is in order to restriction the present invention, not all within spirit of the present invention and principle, any modification of being done, is equal to replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (7)
1. the processing technology of a glass packaging diode-type thermistor is characterized in that, said processing technology comprises:
Electrode coated material on thermistor chip is processed the chip that has electrode;
The use silver solder to lead-in wire, forms thermistor with the said chips welding that has electrode;
Adopt glass packaging technology that said thermistor is encapsulated, get said glass packaging diode-type thermistor.
2. the processing technology of glass packaging diode-type thermistor according to claim 1 is characterized in that, said employing glass packaging technology encapsulates said thermistor, gets after the said glass packaging diode-type thermistor, also comprises:
Give the silica gel protected layer of vitreum parcel and/or the epoxy resin protective layer of said glass packaging diode-type thermistor;
After having wrapped up, need be by use with the machine-shaping of said glass packaging diode-type thermistor.
3. the processing technology of glass packaging diode-type thermistor according to claim 1 is characterized in that, said on thermistor chip electrode coated material, process the chip that has electrode, specifically comprise:
With being printed on the said thermistor chip after the dilution of silver slurry;
Said thermistor chip after the printing is put into the sintering furnace high temperature sintering, form the chip that has electrode.
4. the processing technology of glass packaging diode-type thermistor according to claim 1 is characterized in that, said use silver solder to lead-in wire, forms thermistor with the said chips welding that has electrode, specifically comprises:
Flood silver solder through automatic impregnating equipment to lead contact;
Dipping is put said lead-in wire and the said chip that has electrode in the location notch after accomplishing, and said lead contact is contacted with the said chip that has electrode;
Through pressurization said lead contact and the said chip that has electrode are compressed;
Adopt automatic welding machine to weld said lead contact and the said chip that has electrode, form thermistor.
5. the processing technology of glass packaging diode-type thermistor according to claim 2 is characterized in that, said silica gel protected layer of vitreum parcel and/or the epoxy resin protective layer of giving said glass packaging diode-type thermistor specifically comprises:
Flood silica gel for the vitreum of said glass packaging diode-type thermistor through impregnating equipment, the said diode-type thermistor in dipping back gets into the baking disk, and baking made the silica gel of dipping solidify in 20 minutes under 100 ℃ on said baking disk; Or/and
Through the vitreum epoxy resin-impregnated that impregnating equipment is given said glass packaging diode-type thermistor, flood the said diode-type thermistor in back and get into the baking disk, on said baking disk, toast the epoxy resin cure that made dipping in 3 hours down at 105 ℃.
6. the processing technology of glass packaging diode-type thermistor according to claim 4 is characterized in that, said employing automatic welding machine welds said lead contact and the said chip that has electrode, forms thermistor, specifically comprises:
Automatic welding machine is carried out the parameter setting, be specially: air pressure is set to 5 ± 0.5Kgf/cm
2, the warm area temperature is set to 750 ℃ in 690 ℃ in 1 district, 710 ℃ in 2 districts and 3 districts, and preheat temperature and time are set to 100 ℃ of following preheating 20S;
Weld said lead contact and the said chip that has electrode with said automatic welding machine after completion is set, form thermistor.
7. the processing technology of the glass packaging diode-type thermistor of stating according to claim 6 is characterized in that, the said setting welded after the core that said lead contact and said has electrode with said automatic welding machine after accomplishing, and also comprises:
Welding is carried out ultrasonic cleaning to the said thermistor that obtains after accomplishing, and cleaning fluid is a butanone;
After the cleaning the said said thermistor that obtains is put into baking box, toasted 50 minutes down at 100 ℃.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210126643.1A CN102664080B (en) | 2012-04-26 | 2012-04-26 | Processing technology for glass encapsulated diode type thermistor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210126643.1A CN102664080B (en) | 2012-04-26 | 2012-04-26 | Processing technology for glass encapsulated diode type thermistor |
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| CN102664080A true CN102664080A (en) | 2012-09-12 |
| CN102664080B CN102664080B (en) | 2014-04-16 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103736688A (en) * | 2013-12-30 | 2014-04-23 | 孝感华工高理电子有限公司 | Method for cleaning glass sealed diode structure NTC thermistor |
| CN112362177A (en) * | 2019-06-26 | 2021-02-12 | 兴勤（宜昌）电子有限公司 | Double-sided automatic welding packaging equipment for glass packaging temperature sensor |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1905086A (en) * | 2005-07-25 | 2007-01-31 | 株式会社日立制作所 | Temperature-sensing device |
| CN201036097Y (en) * | 2007-04-02 | 2008-03-12 | 莫海声 | Single end leading-out wire glass enveloped negative temperature coefficient thermistor |
| US20100066482A1 (en) * | 2008-09-16 | 2010-03-18 | Murata Manufacturing Co., Ltd. | Electronic component with lead wire |
-
2012
- 2012-04-26 CN CN201210126643.1A patent/CN102664080B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1905086A (en) * | 2005-07-25 | 2007-01-31 | 株式会社日立制作所 | Temperature-sensing device |
| CN201036097Y (en) * | 2007-04-02 | 2008-03-12 | 莫海声 | Single end leading-out wire glass enveloped negative temperature coefficient thermistor |
| US20100066482A1 (en) * | 2008-09-16 | 2010-03-18 | Murata Manufacturing Co., Ltd. | Electronic component with lead wire |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103736688A (en) * | 2013-12-30 | 2014-04-23 | 孝感华工高理电子有限公司 | Method for cleaning glass sealed diode structure NTC thermistor |
| CN112362177A (en) * | 2019-06-26 | 2021-02-12 | 兴勤（宜昌）电子有限公司 | Double-sided automatic welding packaging equipment for glass packaging temperature sensor |
| CN112362177B (en) * | 2019-06-26 | 2023-01-06 | 兴勤（宜昌）电子有限公司 | Double-sided automatic welding and packaging equipment for glass packaging temperature sensor |
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| CN102664080B (en) | 2014-04-16 |
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