CN106783814A - A kind of film bulk acoustic wave device bare chip module package structure and method for packing - Google Patents
A kind of film bulk acoustic wave device bare chip module package structure and method for packing Download PDFInfo
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- CN106783814A CN106783814A CN201611003600.9A CN201611003600A CN106783814A CN 106783814 A CN106783814 A CN 106783814A CN 201611003600 A CN201611003600 A CN 201611003600A CN 106783814 A CN106783814 A CN 106783814A
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- 238000000034 method Methods 0.000 title claims abstract description 20
- 238000012856 packing Methods 0.000 title claims abstract description 10
- 239000000758 substrate Substances 0.000 claims abstract description 58
- 238000004806 packaging method and process Methods 0.000 claims abstract description 21
- 238000005538 encapsulation Methods 0.000 claims abstract description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 5
- 239000010931 gold Substances 0.000 claims abstract description 5
- 229910052737 gold Inorganic materials 0.000 claims abstract description 5
- 238000009504 vacuum film coating Methods 0.000 claims abstract description 5
- 238000005520 cutting process Methods 0.000 claims abstract description 4
- 238000010438 heat treatment Methods 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 38
- 239000010409 thin film Substances 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 238000009826 distribution Methods 0.000 claims description 3
- 238000007711 solidification Methods 0.000 claims description 3
- 230000008023 solidification Effects 0.000 claims description 3
- 239000010410 layer Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000012528 membrane Substances 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 238000012536 packaging technology Methods 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 238000009517 secondary packaging Methods 0.000 description 1
- 238000007493 shaping process Methods 0.000 description 1
- 238000010897 surface acoustic wave method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/041—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00
- H01L25/042—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L31/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
- H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
- H01L21/561—Batch processing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3121—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed a substrate forming part of the encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73201—Location after the connecting process on the same surface
- H01L2224/73203—Bump and layer connectors
- H01L2224/73204—Bump and layer connectors the bump connector being embedded into the layer connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
Abstract
The invention discloses a kind of film bulk acoustic wave device bare chip module package structure and method for packing, multi-chip modules encapsulating structure includes substrate and bare chip, bare chip includes film bulk acoustic wave device bare chip and other functions bare chip, all naked core plate electrodes are by flip chip bonding by gold goal connection corresponding with electrode of substrate, film layer is adhesively fixed with substrate surface, film layer is close to substrate surface and wraps all bare chips, and vacuum chamber is formed between all bare chips and substrate.During encapsulation, each naked core plate electrode in multi-chip modules to be packaged is welded on the counter electrode of substrate correspondence packaging area by Flip Chip Bond Technique；Diaphragm is mounted on substrate by vacuum film coating process and wraps all chips；Heating cure, finally presses packaging area cutting by substrate.The present invention is directly encapsulated using bare chip, volume is substantially reduced than original secondary encapsulation, while improve packaging efficiency.
Description
Technical field
The present invention relates to comprising thin-film bulk acoustic wave filter（FBAR）Module, more particularly to the film bulk acoustic wave device is naked
Chip module encapsulating structure and method for packing, belong to acoustic wave filter encapsulation technology field.
Background technology
Thin-film bulk acoustic wave filter（FBAR）Simply a single component, unitary function, will form One function more
Strengthen big system, often also need to and other functions module（Such as switch module, power amplifier module）It is attached to form mould
Group.At present, during module packaging comprising thin-film bulk acoustic wave filter, due to thin-film bulk acoustic wave filter to working surface requirement very
It is high, it is impossible to contaminated, therefore thin-film bulk acoustic wave filter bare chip is first encapsulated into shaping filter device, this is encapsulated again then
Device afterwards and other functional chips（Or the device after functional chip encapsulation）Encapsulate to form required module together.So extremely
Few thin-film bulk acoustic wave filter bare chip there is the situation of secondary encapsulation, if other functions bare chip has been also carried out encapsulation,
So all bare chips have all carried out secondary encapsulation, are on the one hand unfavorable for the miniaturization of module, on the other hand also reduce encapsulation
Efficiency.
The content of the invention
For deficiencies of the prior art, can realize being miniaturized and processing it is an object of the invention to provide one kind
Film bulk acoustic wave device bare chip module package structure and method for packing that efficiency is improved.
To achieve these goals, the technical solution adopted by the present invention is as follows：
A kind of multi-chip modules encapsulating structure including including film bulk acoustic wave device bare chip, including substrate and bare chip, institute
Stating bare chip includes film bulk acoustic wave device bare chip and other functions bare chip, and substrate and all bare chips are provided with corresponding
Electrode, it is characterised in that：All naked core plate electrodes, by gold goal connection corresponding with electrode of substrate, are glued by flip chip bonding in substrate surface
Connect and be fixed with film layer, the film layer is close to substrate surface and while wrap all bare chips, all bare chip interval settings
And separated by film layer, form vacuum chamber between all bare chips and substrate.
A kind of multi-chip modules method for packing including including film bulk acoustic wave device bare chip, it is characterised in that：Including
Film bulk acoustic wave device bare chip has foregoing encapsulating structure in interior multi-chip modules, and specific encapsulation step is as follows：
1）The multi-chip modules quantity encapsulated as needed on substrate divides corresponding packaging area, each packaging area correspondence
One multi-chip modules to be packaged；Set according to each bare chip distribution situation in multi-chip modules to be packaged in each packaging area
There is electrode of substrate corresponding with all bare chip electrodes；
2）Each naked core plate electrode in multi-chip modules to be packaged is welded on into substrate correspondence by Flip Chip Bond Technique respectively to encapsulate
On the counter electrode in region；
3）Diaphragm is mounted on substrate by vacuum film coating process and wraps all chips, under the parcel of diaphragm,
Vacuum chamber is formed between each chip and substrate；
4）Diaphragm is set to be bonded solidification by heating, so that diaphragm is fixedly connected with substrate and all chips respectively；
5）Substrate is obtained into cutter unit by packaging area cutting, each cutter unit is by the correspondingly substrate of packaging area and thereon
All chips and diaphragm constitute, the cutter unit be constitute one piece of multi-chip modules.
The present invention is entered the bare chip of thin-film bulk acoustic wave filter with other semiconductor functional chips using membrane technology is encapsulated
Row encapsulation, forms the complete module of One function.Compared to existing technology, the invention has the advantages that：
1st, directly encapsulated using bare chip, volume can be obviously reduced, be particularly well-suited in the mobile terminal in future, than original
Packing forms（Secondary encapsulation）Volume is substantially reduced, while improve packaging efficiency.
2nd, present invention flip chip bonding by SAW filter Bare chip soldering on substrate, by vacuum pressure by resin
Film or bonding die film are mounted on substrate and wrap all bare chips, by such means, make chip internal with outside shape
Into two parts of isolation, so that the effect for protecting bare chip surface not to be contaminated and seal, protects surface acoustic wave device
The working face of part, makes the device can be with normal work.And traditional lower filling to add the mode of embedding to be not suitable for film bulk acoustic naked
The encapsulation of chip.
3rd, using the packing forms, flexible combination can be carried out to semiconductor chip and film bulk acoustic wave device.Due to being
Bare chip is encapsulated, and its size is smaller, and the size of whole module can be substantially reduced by optimizing arrangement（It is long, it is wide, it is high）.
Brief description of the drawings
Fig. 1-encapsulating structure schematic diagram of the present invention.
Fig. 2-top view of the present invention.
Specific embodiment
Below in conjunction with the drawings and specific embodiments, the present invention will be described in detail.
Referring to Fig. 1 and Fig. 2, as can be seen that the present invention is including the multicore including film bulk acoustic wave device bare chip from figure
Piece module package structure, including（Ceramics）Substrate 1 and bare chip, the bare chip include film bulk acoustic wave device bare chip 2（Figure
2 show 3）With other functions bare chip 3（Fig. 2 show 2）, substrate and all bare chips are provided with corresponding electrode.
All naked core plate electrodes, by the connection corresponding with electrode of substrate of gold goal 4, film layer 5 are adhesively fixed with substrate surface by flip chip bonding
（Embodiment is bonding die film and resin film）, the film layer 5 is close to the surface of substrate 1 and while wraps all bare chips.It is all
Bare chip interval setting is simultaneously separated by film layer, and vacuum chamber 6 is formed between all bare chips and substrate.
The present invention encapsulates membrane material using specific, to film bulk acoustic wave device（FBAR）Carry out the direct of bare chip module
Encapsulation.On the ceramic substrate of the good pad of pre-production, by way of face-down bonding by film bulk acoustic bare chip with
Substrate connection, while other semiconductor functional chips on flip chip bonding around（Such as switch chip, power amplifier chips etc.）, most end form
Into the multi-chip modules for needing；Then be completely covered with a kind of encapsulating film and wrapped up, ultimately form one it is complete many
Chip module.
Multi-chip modules method for packing of the present invention is comprised the following steps that：
1）The multi-chip modules quantity encapsulated as needed on substrate divides corresponding packaging area, each packaging area correspondence
One multi-chip modules to be packaged；Set according to each bare chip distribution situation in multi-chip modules to be packaged in each packaging area
There is electrode of substrate corresponding with all bare chip electrodes；All packaging areas are in arranged in matrix；
2）Each naked core plate electrode in multi-chip modules to be packaged is welded on into substrate correspondence by Flip Chip Bond Technique respectively to encapsulate
On the counter electrode in region；
3）Diaphragm is mounted on substrate by vacuum film coating process and wraps all chips, under the parcel of diaphragm,
Vacuum chamber is formed between each chip and substrate；
4）Diaphragm is set to be bonded solidification by heating, so that diaphragm is fixedly connected with substrate and all chips respectively；
5）Substrate is obtained into cutter unit by packaging area cutting, each cutter unit is by the correspondingly substrate of packaging area and thereon
All chips and diaphragm constitute, the cutter unit be constitute one piece of multi-chip modules.
The present invention can just obtain such encapsulating structure using the film layer and packaging technology of certain material.The film layer material
It is bonding die film and resin film.This kind of membrane material has Thermocurable, and at a certain temperature, the material softening turns into " g., jelly-like ",
And can be carried out according to the shape of design under the effect of the pressure moulding；Temperature is further improved, the material can progressively solidify, and
Moulding later shape is kept, the feature is based on, this packaging technology is can be only used for, this encapsulating structure is formed.
The all bare chips of the present invention on substrate, form a step-like structure, step bottom by gold goal flip chip bonding
There is gap between substrate, using vacuum film coating process, diaphragm is formed an integument along device upper surface, should after pad pasting
Gap forms vacuum chamber.
Because the working region of SAW device can not pollute, therefore needed face-down bonding after device face-down bonding
The cavity for being formed afterwards is protected.The present invention uses diaphragm to be packaged as a protective layer to prevent follow-up encapsulation
Material invades cavity.Using face-down bonding technique by SAW filter Bare chip soldering on substrate, by vacuum pressure will
Diaphragm is mounted on substrate and wraps bare chip, so as to protect the effect that bare chip surface is not contaminated and seals.By
It is to carry out under vacuum conditions in pad pasting, therefore the moisture content of device can be guaranteed.Because this vacuum pad pasting encapsulates work
Artistic skill enough makes requirement SAW filter bare chip higher meet encapsulation requirement, and other relatively low functions are required to encapsulation
Chip is even more to be had no problem, therefore the disposable encapsulation of all chips can be simultaneously realized by this method, and avoids two
The volume that secondary packaging belt comes is difficult to decline and inefficient problem.
The above embodiment of the present invention is only example to illustrate the invention, and is not to implementation of the invention
The restriction of mode.For those of ordinary skill in the field, other can also be made not on the basis of the above description
With the change and variation of form.Here all of implementation method cannot be exhaustive.It is every to belong to technical scheme
The obvious change amplified out changes row still in protection scope of the present invention.
Claims (3)
1. a kind of multi-chip modules encapsulating structure including including film bulk acoustic wave device bare chip, including substrate and bare chip,
The bare chip includes film bulk acoustic wave device bare chip and other functions bare chip, and substrate and all bare chips are provided with correspondence
Electrode, it is characterised in that：All naked core plate electrodes are connected by flip chip bonding by gold goal is corresponding with electrode of substrate, in substrate surface
Film layer is adhesively fixed with, the film layer is close to substrate surface and while wraps all bare chips, all bare chip intervals set
Put and separated by film layer, vacuum chamber is formed between all bare chips and substrate.
2. the multi-chip modules encapsulating structure including including film bulk acoustic wave device bare chip according to claim 1, its
It is characterised by：The film layer is bonding die film and resin film.
3. a kind of multi-chip modules method for packing including including film bulk acoustic wave device bare chip, it is characterised in that：Including thin
Film body acoustic wave device bare chip has the encapsulating structure described in claim 1 or 2, specific encapsulation step in interior multi-chip modules
It is as follows：
1）The multi-chip modules quantity encapsulated as needed on substrate divides corresponding packaging area, each packaging area correspondence
One multi-chip modules to be packaged；Set according to each bare chip distribution situation in multi-chip modules to be packaged in each packaging area
There is electrode of substrate corresponding with all bare chip electrodes；
2）Each naked core plate electrode in multi-chip modules to be packaged is welded on into substrate correspondence by Flip Chip Bond Technique respectively to encapsulate
On the counter electrode in region；
3）Diaphragm is mounted on substrate by vacuum film coating process and wraps all chips, under the parcel of diaphragm,
Vacuum chamber is formed between each chip and substrate；
4）Diaphragm is set to be bonded solidification by heating, so that diaphragm is fixedly connected with substrate and all chips respectively；
5）Substrate is obtained into cutter unit by packaging area cutting, each cutter unit is by the correspondingly substrate of packaging area and thereon
All chips and diaphragm constitute, the cutter unit be constitute one piece of multi-chip modules.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611003600.9A CN106783814A (en) | 2016-11-15 | 2016-11-15 | A kind of film bulk acoustic wave device bare chip module package structure and method for packing |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611003600.9A CN106783814A (en) | 2016-11-15 | 2016-11-15 | A kind of film bulk acoustic wave device bare chip module package structure and method for packing |
Publications (1)
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|---|---|
| CN106783814A true CN106783814A (en) | 2017-05-31 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611003600.9A Pending CN106783814A (en) | 2016-11-15 | 2016-11-15 | A kind of film bulk acoustic wave device bare chip module package structure and method for packing |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109962065A (en) * | 2018-11-30 | 2019-07-02 | 无锡市好达电子有限公司 | A kind of micromation multichip packaging structure of sound table device |
| CN112738997A (en) * | 2021-01-11 | 2021-04-30 | 吕卫文 | Variable pressure packaging connection method and equipment |
| WO2021146855A1 (en) * | 2020-01-20 | 2021-07-29 | 开元通信技术（厦门）有限公司 | Radio frequency filter |
| CN113536729A (en) * | 2021-07-27 | 2021-10-22 | 中国电子科技集团公司第二十六研究所 | Method for assembling and using film bulk acoustic wave resonant filter and electronic equipment |
| CN113612461A (en) * | 2021-07-20 | 2021-11-05 | 北京航天微电科技有限公司 | Chip-level air tightness packaging process of SAW filter |
| CN116072553A (en) * | 2023-02-23 | 2023-05-05 | 深圳飞骧科技股份有限公司 | Radio frequency module packaging method, radio frequency module and computer readable storage medium |
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| US20060194370A1 (en) * | 2005-02-25 | 2006-08-31 | Samsung Electro-Mechanics Co., Ltd. | Radio frequency module and fabrication method thereof |
| CN202818243U (en) * | 2012-09-28 | 2013-03-20 | 中国电子科技集团公司第二十六研究所 | Multiple surface acoustic wave bare chip module in flip-chip bonding package |
| CN206163483U (en) * | 2016-11-15 | 2017-05-10 | 中国电子科技集团公司第二十六研究所 | Many chip module packaging structure including film bulk acoustic wave device unpacked chip |
-
2016
- 2016-11-15 CN CN201611003600.9A patent/CN106783814A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
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| US20050070045A1 (en) * | 2003-09-29 | 2005-03-31 | Kook Hyun Sunwoo | FBAR based duplexer device and manufacturing method thereof |
| US20060194370A1 (en) * | 2005-02-25 | 2006-08-31 | Samsung Electro-Mechanics Co., Ltd. | Radio frequency module and fabrication method thereof |
| CN202818243U (en) * | 2012-09-28 | 2013-03-20 | 中国电子科技集团公司第二十六研究所 | Multiple surface acoustic wave bare chip module in flip-chip bonding package |
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Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109962065A (en) * | 2018-11-30 | 2019-07-02 | 无锡市好达电子有限公司 | A kind of micromation multichip packaging structure of sound table device |
| WO2021146855A1 (en) * | 2020-01-20 | 2021-07-29 | 开元通信技术（厦门）有限公司 | Radio frequency filter |
| CN112738997A (en) * | 2021-01-11 | 2021-04-30 | 吕卫文 | Variable pressure packaging connection method and equipment |
| CN113612461A (en) * | 2021-07-20 | 2021-11-05 | 北京航天微电科技有限公司 | Chip-level air tightness packaging process of SAW filter |
| CN113612461B (en) * | 2021-07-20 | 2024-02-09 | 北京航天微电科技有限公司 | Chip-level airtight packaging technology of SAW filter |
| CN113536729A (en) * | 2021-07-27 | 2021-10-22 | 中国电子科技集团公司第二十六研究所 | Method for assembling and using film bulk acoustic wave resonant filter and electronic equipment |
| CN113536729B (en) * | 2021-07-27 | 2022-11-01 | 中国电子科技集团公司第二十六研究所 | Method for assembling and using film bulk acoustic wave resonant filter and electronic equipment |
| CN116072553A (en) * | 2023-02-23 | 2023-05-05 | 深圳飞骧科技股份有限公司 | Radio frequency module packaging method, radio frequency module and computer readable storage medium |
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